Company Information

CIN
Status
Date of Incorporation
14 March 2008
State / ROC
Delhi / ROC Delhi
Last Balance Sheet
31 March 2018
Last Annual Meeting
03 September 2018
Paid Up Capital
5,277,200
Authorised Capital
10,000,000

Directors

Mohd Yunus
Mohd Yunus
Director/Designated Partner
over 2 years ago
Mohd Javed Saifi
Mohd Javed Saifi
Director/Designated Partner
over 2 years ago
Ismail Kolay
Ismail Kolay
Director/Designated Partner
over 17 years ago
Osman Kolay
Osman Kolay
Director/Designated Partner
over 17 years ago
Osman Akgul
Osman Akgul
Director/Designated Partner
over 17 years ago
Mohd Yusuf
Mohd Yusuf
Director/Designated Partner
over 17 years ago

Patents

Penetrating Plasma Generating Apparatus For High Vacuum Chambers

Plasma generating apparatus including a high vacuum processing chamber, a transformer type plasmatron, coupled with the high vacuum processing chamber, and at least one gas source, coupled with the transformer type plasmatron, for introducing at least one gas into the transformer type plasmatron, the high vacuum pr...

Stationary Solar Spectrum Splitting System And Method For Stimularing A Broad Band Photovoltaic Cell Array

Solar system for converting solar radiation into electric energy, the system comprising a refraction array and a converting array, the refracting array including at least one refraction sub array, each of the refraction sub arrays including a plurality of refraction sites, each of the solar rays being of a different...

Amorphous Group Iii V Semiconductor Material And Preparation Thereof

Reactive evaporation method for forming a group III-V amorphous material attached to a substrate, the method including the procedures of subjecting the substrate to an ambient pressure of no greater than 0.01 PA and introducing active group-V matter to the surface of the substrate at a working pressure of between 0....

Method For Surfactant Crystal Growth Of A Metal Nonmetal Compound

Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to contact with the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed c...

Group Iii Metal Nitride And Preparation Thereof

A method for forming a group-III metal nitride material film attached to a substrate, the method including the procedures of subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate to a temperature of between approximately 500°C-800°C. The method further includes the pro...