A method and a system are described for improving a dynamic range of a CMOS image sensor by pixel-embedded signal amplification. An electromagnetic radiation is incident for a predetermined duration on a pixel-array comprising of a plurality of photodiodes. The photodiodes release electrons in form of an input elect...

A method and a system are described for dynamic range enhancement in CMOS image sensors using charge-transfer amplification. The method involves resetting a pixel array and other nodes of the CMOS image sensor. It involves receiving light for a predetermined duration on the pixel array layered with photodiodes. It i...

A method and a system are disclosed for pixel-embedded signal amplification of a CMOS image sensor using multi-step voltage-gain enhancement. It involves activating a row of the CMOS image sensor by resetting switches SRST202, SH1201 and SH2 209 to charge nodes PD1, PD2, SD1, and SD2 to a pre-set voltage potential a...

The invention relates to a CIS technology that uses impulsive metrics and non-linear/higher order statistics to substantially reduce the random telegraph signal (RTS) noise. The CMOS image sensor includes a 4T active pixel pinned photodiode (301), a row select transistor (202), a low noise column level amplifier...

The present invention relates to a single photon avalanche diodes - based time-of-flight sensor (100) . The single photon avalanche diodes (SPADs) based time-of-flight (ToF) sensor (100) includes an N x N single photon avalanche diode (SPAD) photodetector (101), a front-end (FE) unit (103), a pulse shaping (PS) unit...