FORM 2
THE PATENTS ACT, 1970 (39 OF 1970) & THE PATENT RULES, 2003
COMPLETE SPECIFICATION
(See section 10 and rule 13)
“SYSTEM AND METHOD FOR PROVIDING HIGH POWERED 5G NR INTEGRATED MACRO GNODEB”
We, Jio Platforms Limited, an Indian National, of Office - 101, Saffron, Nr. Centre Point, Panchwati 5 Rasta, Ambawadi, Ahmedabad - 380006, Gujarat, India.
The following specification particularly describes the invention and the manner in which it is to be performed.

SYSTEM AND METHOD FOR PROVIDING HIGH POWERED 5G NR INTEGRATED MACRO GNODEB
FIELD OF THE DISCLOSURE
[0001] The present disclosure relates generally to the field of wireless communication systems. In particular, the present disclosure relates to high-powered four transmit four receive (4T4R) radio frequency front end (RFFE) board of 5G new radio (NR). More particularly, the present disclosure relates to a system and method for providing high powered 5G NR integrated macro gNodeB.
BACKGROUND
[0002] The following description of related art is intended to provide background information pertaining to the field of the disclosure. This section may include certain aspects of the art that may be related to various features of the present disclosure. However, it should be appreciated that this section be used only to enhance the understanding of the reader with respect to the present disclosure, and not as admissions of prior art.
[0003] Wireless communication technology has rapidly evolved over the past few decades, with each generation bringing significant improvements and advancements. The first generation of wireless communication technology was based on analog technology and offered only voice services. However, with the advent of the second-generation (2G) technology, digital communication and data services became possible, and text messaging was introduced. 3G technology marked the introduction of high-speed internet access, mobile video calling, and location-based services. The fourth-generation (4G) technology revolutionized wireless communication with faster data speeds, better network coverage, and improved security. Currently, the fifth-generation (5G) technology is being deployed, promising even faster data speeds, low latency, and the ability to connect

multiple devices simultaneously. With each generation, wireless communication technology has become more advanced, sophisticated, and capable of delivering more services to its users.
[0004] Traditional systems often use Class AB amplifiers in the driver stage, which provides low output power and leads to low efficiency. This is especially a problem when high order Quadrature Amplitude Modulation (QAM) transmissions are used, which have a high peak to average power ratio (PAPR) and require a linear radio frequency (RF) amplifier. Prior designs may face performance degradation due to parasitic effects associated with multilayer substrate use, leading to impedance mismatches. Existing designs may struggle with dissipating the heat generated by high-power Gallium Nitride (GaN)-based power amplifiers, leading to potential overheating issues. The use of separate daughter cards for the digital control circuit, the use of large isolators, and the requirement for mating connectors, all increase the overall size and cost of the system. Current designs may not adequately shield the input and output sides of the power amplifier, leading to electromagnetic interference that can degrade performance. Prior solutions may not use the available board space effectively, resulting in a less compact system.
[0005] Therefore, in light of the foregoing discussion, there exists a need to overcome the aforementioned drawbacks.
[0006] Thus, there exists an imperative need in the art to provide a system and method for providing high powered 5G NR integrated macro gNodeB. The proposed invention addresses these problems by efficient placement of RF components, such as GaN-based power amplifiers to ensure proper isolation among the transmit and receive chains.
OBJECTS OF THE INVENTION

[0007] Some of the objects of the present disclosure, which at least one embodiment disclosed herein satisfies are listed herein below.
[0008] It is an object of the present disclosure to provide a system and method for providing high powered 5G NR integrated macro gNodeB.
[0009] It is another object of the present disclosure to provide a system and method for providing high powered 5G NR integrated macro gNodeB that enhances energy efficiency by implementing a Doherty amplifier in the driver and final stage power amplifier of Radio Frequency Front End (RFFE) board, which performs more efficiently than conventional Class AB amplifiers, particularly in terms of back-off efficiency.
[0010] It is another object of the present disclosure to provide a system and method for providing high powered 5G NR integrated macro gNodeB that includes an innovative use of embedded copper coins in the Printed Circuit Board (PCB) to conduct and dissipate heat more efficiently from high-power Doherty GaN power amplifiers to the system sink.
[0011] It is another object of the present disclosure to provide a system and method for optimizing high powered 5G NR integrated macro gNodeB that minimizes the parasitic effects of multilayer substrates by tuning the input and output elements of the high-power RF GaN Amplifier in a Doherty configuration.
[0012] It is another object of the present disclosure to provide a system and method for providing high powered 5G NR integrated macro gNodeB that ensure electromagnetic interference protection by providing partition between the input and output side of the final stage Power amplifier using Form-In-Place (FIP) based shield wall.

[0013] It is another object of the present disclosure to provide a system and method for optimizing high powered 5G NR integrated macro gNodeB that streamlines impedance matching by using an off-the-shelf RF Circulator as an Isolator, with the option to replace externally connected 50ohm termination resistors, thereby avoiding any inter-stage impedance mismatch.
[0014] It is another object of the present disclosure to provide a system and method for providing high powered 5G NR integrated macro gNodeB that optimizes space and cost by compactly placing RF components within a limited board space, maintaining proper isolation among the chains, and optimizing the use of space and costs.
[0015] It is yet another object of the present disclosure to provide a system and method for providing high powered 5G NR integrated macro gNodeB that eliminates the use of any daughter cards for digital control circuit and the required mating connectors. The digital signal routing and complex RF section is accommodated into a single multilayer substrate board, which simplifies the system and reduces costs.
SUMMARY OF THE DISCLOSURE
[0016] This section is provided to introduce certain aspects of the present disclosure in a simplified form that are further described below in the detailed description. This summary is not intended to identify the key features or the scope of the claimed subject matter.
[0017] An aspect of the present disclosure provides a system for providing a 5G New Radio (NR) integrated macro gNodeB (gNB) radio frequency front end (RFFE). The system comprises an RFFE board, comprises at least four transmit chains, each of the at least four transmit chains sequentially comprising a matching balun, a pre-driver amplifier, a doherty driver amplifier, and a doherty-based radio

frequency (RF) Gallium Nitride (GaN) power amplifier; at least four receive chains, each of the at least four receive chains systematically equipped with a low noise amplifier for initial signal amplification, a band-pass surface acoustic wave (SAW) filter to selectively allow certain frequencies, and a first matching network; at least four observation chains designed as feedback paths from the doherty-based GaN power amplifiers to a transceiver, the at least four observation chains comprises a coupler and a second matching network; a radio frequency time division duplex (RF TDD) switch integrated into a receiver front end; and a circulator, to ensure uni-directional RF signal propagation, and a cavity filter for selective frequency passage, the circulator and the cavity filter are positioned between each RF switch and corresponding antenna port. The system further comprises an integrated baseband and transceiver board (IBTB) for generating and transmitting control signals. The system further comprises a radio frequency shield integrated with a form-in-place (FIP) based shield wall to maintain isolation between input and output sides of the doherty-based RF GaN power amplifier.
[0018] In an aspect, the system comprises a copper coin embedded in the RFFE board to enable transfer of heat from the doherty-based GaN power amplifier to at least a heat sink.
[0019] In an aspect, the embedded copper coins enable management of heat transfer and electrical grounding.
[0020] In an aspect, the circulator further comprises an externally connected 50-ohm termination resistance designed mitigate interstage impedance mismatch and to provide isolation between the doherty driver amplifier and doherty-based radio frequency (RF) Gallium Nitride (GaN) power amplifier.
[0021] In an aspect, the multilayer substrate comprises six or more layers, wherein: a first layer and a second layer of the six or more layers comprises poly tetra fluoro ethylene (PTFE) based RF substrate for providing superior RF performance; and

other layers of the six or more layers comprises flame-retardant type-4 (FR4) dielectric material having high temperature sustainability.
[0022] In an aspect, the system utilizes high order quadrature amplitude modulation (QAM) transmissions to increase data transmission rate, and doherty technique in the doherthy driver amplifier increases performance of the RFFE board.
[0023] In an aspect, the RF shield with the FIP based shield wall is designed to maintain isolation between the input and output sides of the doherty-based RF GaN power amplifier.
[0024] In an aspect, the radio frequency time division duplex (RF TDD) switch integrated into the receiver front end is configured to provide protection against potential impedance mismatch or port open conditions, preventing reverse transmit power from reaching the receiver.
[0025] Another aspect of the present disclosure comprises a method for providing a high-powered 5G New Radio (NR) integrated macro gNodeB (gNB) Radio Frequency Front End (RFFE). The method comprises initializing an RFFE board. The method comprises amplifying signal transmission using at least four transmit chains, each of the at least four transmit chains sequentially comprising a matching balun, a pre-driver amplifier, a doherty driver amplifier, and a doherty-based RF GaN power amplifier. The method further comprises capturing and refining signal reception through at least four receive chains, each of the at least four receive chains systematically equipped with a low noise amplifier for initial signal amplification, a band-pass surface acoustic wave (SAW) filter to selectively allow certain frequencies, and a first matching network. The method further comprises establishing feedback pathways using at least four observation chains, the at least four observation chains designed as the feedback paths from the doherty-based GaN power amplifiers to a transceiver, the at least four observation chains comprise a coupler and a second matching network. The method further comprises engaging a

switch integrated into a receiver front end. The method further comprises directing RF signal propagation in a uni-directional manner with a circulator and refining the signal's frequency properties with a cavity filter, the circulator and the cavity filter are positioned between each RF switch and its designated antenna port. The method further comprises generating and transmitting control signals via an integrated baseband and transceiver board to guide operation of the other components. Thereafter, the method further comprises ensuring electromagnetic integrity by engaging a radio frequency shield integrated with a form-in-place (FIP) based shield wall to maintain isolation between the input and output sides of the doherty-based RF GaN power amplifier.
BRIEF DESCRIPTION OF DRAWINGS
[0026] The accompanying drawings, which are incorporated herein, and constitute a part of this disclosure, illustrate exemplary embodiments of the disclosed methods and systems in which like reference numerals refer to the same parts throughout the different drawings. Components in the drawings are not necessarily to scale, emphasis instead being placed upon clearly illustrating the principles of the present disclosure. Some drawings may indicate the components using block diagrams and may not represent the internal circuitry of each component. It will be appreciated by those skilled in the art that disclosure of such drawings includes disclosure of electrical components, electronic components or circuitry commonly used to implement such components.
[0027] FIG. 1 illustrates an exemplary block diagram of a system for providing a high-powered 5G New Radio (NR) integrated macro gNodeB (gNB) radio frequency front end (RFFE), in accordance with exemplary embodiments of the present disclosure.

[0028] FIG. 2 illustrates an exemplary block diagram of 4T4R RF front end board Doherty driver amplifier and final stage amplifier, in accordance with an embodiment of the present disclosure.
5 [0029] FIG. 3 illustrates an exemplary method flow diagram for providing a high-
powered 5G New Radio (NR) integrated macro gNodeB (gNB) radio frequency front end (RFFE), shown in accordance with exemplary embodiments of the present disclosure.
10 [0030] FIG. 4 illustrates an exemplary block diagram of an Integrated Baseband
and Transceiver board (IBTB) and an RFFE board, in accordance with an embodiment of the present disclosure.
[0031] FIG. 5 illustrates an exemplary block diagram of a copper coin embedded
15 into the RFFE board, in accordance with an embodiment of the present disclosure.
[0032] The foregoing shall be more apparent from the following more detailed description of the disclosure.
20 DETAILED DESCRIPTION
[0033] In the following description, for the purposes of explanation, various specific details are set forth in order to provide a thorough understanding of embodiments of the present disclosure. It will be apparent, however, that
25 embodiments of the present disclosure may be practiced without these specific
details. Several features described hereafter can each be used independently of one another or with any combination of other features. An individual feature may not address any of the problems discussed above or might address only some of the problems discussed above. Some of the problems discussed above might not be
30 fully addressed by any of the features described herein. Example embodiments of
the present disclosure are described below, as illustrated in various drawings in
9

which like reference numerals refer to the same parts throughout the different drawings.
[0034] The ensuing description provides exemplary embodiments only, and is not
5 intended to limit the scope, applicability, or configuration of the disclosure. Rather,
the ensuing description of the exemplary embodiments will provide those skilled in
the art with an enabling description for implementing an exemplary embodiment.
It should be understood that various changes may be made in the function and
arrangement of elements without departing from the spirit and scope of the
10 disclosure as set forth.
[0035] It should be noted that the terms "mobile device", "user equipment", "user device", “communication device”, “device” and similar terms are used interchangeably for the purpose of describing the invention. These terms are not
15 intended to limit the scope of the invention or imply any specific functionality or
limitations on the described embodiments. The use of these terms is solely for convenience and clarity of description. The invention is not limited to any particular type of device or equipment, and it should be understood that other equivalent terms or variations thereof may be used interchangeably without departing from the scope
20 of the invention as defined herein.
[0036] Specific details are given in the following description to provide a thorough understanding of the embodiments. However, it will be understood by one of ordinary skill in the art that the embodiments may be practiced without these
25 specific details. For example, circuits, systems, networks, processes, and other
components may be shown as components in block diagram form in order not to obscure the embodiments in unnecessary detail. In other instances, well-known circuits, processes, algorithms, structures, and techniques may be shown without unnecessary detail in order to avoid obscuring the embodiments.
30
10

[0037] Also, it is noted that individual embodiments may be described as a process
which is depicted as a flowchart, a flow diagram, a data flow diagram, a structure
diagram, or a block diagram. Although a flowchart may describe the operations as
a sequential process, many of the operations can be performed in parallel or
5 concurrently. In addition, the order of the operations may be re-arranged. A process
is terminated when its operations are completed but could have additional steps not included in a figure.
[0038] The word “exemplary” and/or “demonstrative” is used herein to mean
10 serving as an example, instance, or illustration. For the avoidance of doubt, the
subject matter disclosed herein is not limited by such examples. In addition, any aspect or design described herein as “exemplary” and/or “demonstrative” is not necessarily to be construed as preferred or advantageous over other aspects or designs, nor is it meant to preclude equivalent exemplary structures and techniques
15 known to those of ordinary skill in the art. Furthermore, to the extent that the terms
“includes,” “has,” “contains,” and other similar words are used in either the detailed description or the claims, such terms are intended to be inclusive—in a manner similar to the term “comprising” as an open transition word—without precluding any additional or other elements.
20
[0039] As used herein, an “electronic device”, or “portable electronic device”, or “user device” or “communication device” or “user equipment” or “device” refers to any electrical, electronic, electromechanical and computing device. The user device is capable of receiving and/or transmitting one or parameters, performing
25 function/s, communicating with other user devices and transmitting data to the
other user devices. The user equipment may have a processor, a display, a memory, a battery and an input-means such as a hard keypad and/or a soft keypad. The user equipment may be capable of operating on any radio access technology including but not limited to IP-enabled communication, Zig Bee, Bluetooth, Bluetooth Low
30 Energy, Near Field Communication, Z-Wave, Wi-Fi, Wi-Fi direct, etc. For instance,
the user equipment may include, but not limited to, a mobile phone, smartphone,
11

virtual reality (VR) devices, augmented reality (AR) devices, laptop, a general-purpose computer, desktop, personal digital assistant, tablet computer, mainframe computer, or any other device as may be obvious to a person skilled in the art for implementation of the features of the present disclosure. 5
[0040] Further, the user device may also comprise a “processor” or “processing unit” includes processing unit, wherein processor refers to any logic circuitry for processing instructions. The processor may be a general-purpose processor, a special purpose processor, a conventional processor, a digital signal processor, a
10 plurality of microprocessors, one or more microprocessors in association with a
DSP core, a controller, a microcontroller, Application Specific Integrated Circuits, Field Programmable Gate Array circuits, any other type of integrated circuits, etc. The processor may perform signal coding data processing, input/output processing, and/or any other functionality that enables the working of the system according to
15 the present disclosure. More specifically, the processor is a hardware processor.
[0041] As portable electronic devices and wireless technologies continue to improve and grow in popularity, the advancing wireless technologies for data transfer are also expected to evolve and replace the older generations of
20 technologies. In the field of wireless data communications, the dynamic
advancement of various generations of cellular technology are also seen. The development, in this respect, has been incremental in the order of second generation (2G), third generation (3G), fourth generation (4G), and now fifth generation (5G), and more such generations are expected to continue in the forthcoming time.
25
[0042] Radio Access Technology (RAT) refers to the technology used by mobile devices/ user equipment (UE) to connect to a cellular network. It refers to the specific protocol and standards that govern the way devices communicate with base stations, which are responsible for providing the wireless connection. Further, each
30 RAT has its own set of protocols and standards for communication, which define
the frequency bands, modulation techniques, and other parameters used for
12

transmitting and receiving data. Examples of RATs include GSM (Global System
for Mobile Communications), CDMA (Code Division Multiple Access), UMTS
(Universal Mobile Telecommunications System), LTE (Long-Term Evolution), and
5G. The choice of RAT depends on a variety of factors, including the network
5 infrastructure, the available spectrum, and the mobile device's/device's capabilities.
Mobile devices often support multiple RATs, allowing them to connect to different types of networks and provide optimal performance based on the available network resources.
10 [0043] gNodeB" (gNB) refers to the base station component in 5G (fifth-
generation) wireless networks. It is an essential element of the Radio Access Network (RAN) responsible for transmitting and receiving wireless signals to and from user devices, such as smartphones, tablets, and Internet of Things (IoT) devices. In 5G networks, there are similar components in other generations of
15 wireless networks. Here are a few examples: Base Transceiver Station (BTS): In
2G (second-generation) networks, the BTS serves as the base station responsible for transmitting and receiving wireless signals. It connects mobile devices to the cellular network infrastructure. NodeB: In 3G (third-generation) networks, the NodeB is the base station component that enables wireless communication. It
20 facilitates the transmission and reception of signals between user devices and the
network. eNodeB: In 4G (fourth-generation) LTE (Long-Term Evolution) networks, the eNodeB serves as the base station. It supports high-speed data transmission, low latency, and improved network capacity. Access Point (AP): In Wi-Fi networks, an access point functions as a central hub that enables wireless
25 devices to connect to a wired network. It provides a wireless interface for devices
to access the network and facilitates communication between them. The examples illustrate the base station components in different generations of wireless networks, such as BTS in 2G, NodeB in 3G, eNodeB in 4G LTE, and gNodeB in 5G. Each component plays a crucial role in facilitating wireless connectivity and
30 communication between user devices and the network infrastructure.
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[0044] Doherty Driver Amplifier: Unlike conventional Class AB amplifiers,
which operate in a very linear region, a Doherty amplifier provides superior
performance in terms of back-off efficiency. This leads to more efficient power
usage, especially in situations where the amplifier is not operating at its maximum
5 output power, thereby improving the overall system efficiency.
[0045] High-Power RF GaN Amplifier Tuning: The input and output elements of
this amplifier, used in a Doherty configuration, are carefully tuned to minimize the
parasitic effects that can occur with multilayer substrates. By optimizing these
10 aspects, the amplifier can deliver maximum performance in terms of output power
and efficiency, which is particularly beneficial for a 5G network that requires high data rates.
[0046] Form-In-Place (FIP) Shield Wall: A unique feature of the RF shield in this
15 system is the use of a Form-In-Place based shield wall to create a partition between
the input and output sides of the final stage power amplifier. This shield protects the system from electromagnetic interference, maintaining the required isolation between the input and output stages, which can enhance the overall performance and reliability of the system. 20
[0047] Off-The-Shelf RF Circulator as an Isolator: To avoid any inter-stage
impedance mismatch and to provide isolation between the driver and final amplifier
stages, an off-the-shelf RF circulator is used as an isolator. This circulator,
combined with an externally connected 50-ohm termination resistor, can handle
25 high power, is cost-effective, and smaller in size compared to a typical isolator.
Moreover, if required, the externally connected resistor can be replaced for cost and performance advantages.
[0048] Thermal Grounding: A unique method is used to efficiently dissipate heat
30 from the high-power Doherty GaN power amplifier. By embedding a copper coin
into the PCB and providing return to the immediate next layer, the heat is efficiently
14

conducted from the amplifier to the system sink, allowing the multilayer RF Front End board to deliver high power.
[0049] PCB Embedded Copper Coin: The size of the embedded U-shaped copper
5 coin, which facilitates the transfer of heat from the GaN-based power amplifier to
the heat sink, is optimized for excellent heat conductivity. The thermal performance improvement becomes insignificant when the copper size is further increased, indicating an optimal balance between coin size and thermal efficiency.
10 [0050] Hybrid Multilayer Substrate: The RF Front End Board uses a hybrid
multilayer substrate with six or more layers. The first two layers are developed using a high-frequency, low-tangent-loss PTFE-based RF substrate for superior RF performance. The remaining layers are built using a high-speed FR4 dielectric material with high-temperature sustainability, ensuring the durability and reliability
15 of the system.
[0051] Single Multilayer Substrate Board: This design eliminates the need for
any daughter cards for the digital control circuit and the required mating connectors.
By accommodating the digital signal routing and complex RF section into a single
20 multilayer substrate board, the system meets the required performance while
minimizing design complexity and potentially reducing costs.
[0052] Compact Component Placement: The RF components, such as GaN
technology-based power amplifiers, are efficiently and compactly placed in a four
25 transmit and four receive configuration. They are integrated within a limited board
space in a way that maintains proper isolation among the chains, ensuring optimal performance and signal integrity.
[0053] As used herein, radio frequency front end (RFFE) refers to a segment of a
30 wireless communication system responsible for transmitting and receiving radio
signals between the antenna and the baseband processing unit. The RFFE manages
15

conversion of signals from low-frequency baseband to high-frequency radio waves
for transmission and vice versa for reception. The RFFE facilitates in maintaining
signal integrity, boosting signal strength, and filtering out unwanted frequencies,
thereby playing a vital role in achieving high-performance wireless communication,
5 especially in advanced technologies like 5G New Radio (NR).
[0054] As used herein, matching balun refers to a device that serves the dual purpose of impedance matching and converting between balanced and unbalanced signal lines in radio frequency (RF) systems. The term "balun" is derived from
10 "balanced to unbalanced," indicating its primary function of enabling the
connection between balanced components, such as differential signal lines, and unbalanced components, such as single-ended antennas or transmission lines. The matching balun facilitates in maintaining high efficiency and signal quality is paramount, particularly in advanced communication systems like 5G.
15
[0055] As used herein, pre-driver amplifier refers to a stage of amplification in a radio frequency (RF) system that amplifies the signal to an intermediate level before it is fed into the main power amplifier. The pre-driver amplifier facilitates in boosting the signal strength to a level that is optimal for the final amplification
20 stage, such that the power amplifier can operate efficiently and deliver the desired
output power without distortion. The pre-driver amplifier provides gain while maintaining linearity, thereby maintaining the integrity of the original signal.
[0056] As used herein, Doherty driver amplifier refers to an amplifier configuration
25 to enhance the efficiency of radio frequency (RF) signal amplification, particularly
in scenarios where the signal exhibits high peak-to-average power ratios, such as in
modern communication systems. The Doherty driver employs the Doherty
architecture, which utilizes two amplifying paths: a carrier amplifier for low-power
signals and a peaking amplifier that activates during high-power signal peaks. The
30 dual-path approach allows the Doherty driver amplifier to maintain linearity and
efficiency over a wide range of output power levels.
16

[0057] As used herein, a Doherty-based Gallium Nitride (GaN) power amplifier
refers to a power amplifier that combines the Doherty amplification architecture
with the high-performance characteristics of Gallium Nitride semiconductor
5 technology. The Doherty-based GaN power amplifier is designed to significantly
enhance the efficiency and linearity of RF signal amplification, particularly under
high peak-to-average power ratio conditions. The Doherty configuration employs
two amplifiers: a main (carrier) amplifier and an auxiliary (peaking) amplifier,
which work in tandem to improve efficiency across a wide range of output power
10 levels.
[0058] As used herein, surface acoustic wave (SAW) refers to a type of acoustic
wave that travels along the surface of a material with an amplitude that decays
exponentially with depth into the material. The SAW waves are utilized in various
15 electronic components, such as filters, oscillators, and sensors, due to their ability
to precisely control and manage high-frequency signals.
[0059] As used herein, multilayer substrate's parasitic effects refer to the unintended and often detrimental electrical phenomena that arise from the inherent
20 properties and interactions within the multiple layers of a substrate used in
electronic circuits. These effects include unwanted capacitance, inductance, and resistance that can occur between the layers and their conductive paths. In radio frequency (RF) systems, such as those used in 5G New Radio (NR) technology, the multilayer substrates can significantly impact signal integrity, causing issues like
25 signal distortion, loss, and impedance mismatch. The unintended interactions can
degrade the performance of the circuit, reducing efficiency and reliability.
[0060] As used herein, form-in-place (FIP) refers to a process used to create custom
gaskets, seals, or shielding directly onto components or assemblies by dispensing a
30 liquid material that cures in place. The FIP allows for precise application of the
sealing material, which then solidifies to form a tight, reliable seal or shield that
17

conforms exactly to the specific geometries of the parts involved. The FIP is employed to create RF shields that protect sensitive electronic components from electromagnetic interference (EMI) and maintain signal integrity.
5 [0061] As used herein, transmit chains refers to the sequence of electronic
components and circuits within a radio frequency (RF) system that are responsible
for processing and amplifying the outgoing signal before it is transmitted through
an antenna. Each transmit chain includes a series of stages such as a matching balun,
pre-driver amplifier, Doherty driver amplifier, and a final power amplifier. In
10 systems like 5G New Radio (NR), multiple transmit chains are used to support
multiple-input multiple-output (MIMO) configurations, which enhance data throughput and reliability. Each chain operates in parallel to manage the increased data rates and complex modulation schemes.
15 [0062] As used herein, cavity filter refers to a type of radio frequency (RF) filter
that selectively allow certain frequencies to pass while attenuating others. The cavity filter consists of one or more metal-enclosed cavities with precisely dimensioned internal structures that create specific resonant frequencies. By adjusting these dimensions, the cavity filter can be designed to have sharp
20 frequency cutoffs and high selectivity, making it highly effective at rejecting
unwanted signals and minimizing interference.
[0063] As used herein, RFFE board refers to a component in wireless communication systems for handling the transmission and reception of RF signals.
25 The RFFE board integrates various elements such as amplifiers, filters, switches,
and matching networks to ensure efficient signal processing and transmission. The RFFE board includes multiple transmit chains for amplifying outgoing signals, receive chains for initial signal amplification and filtering, and observation chains for feedback and linearization purposes. The RFFE board is designed to support
30 high-frequency operation, enhance signal quality, and improve overall system
efficiency.
18

[0064] As used herein, gain block refers to a type of amplifier used in radio
frequency (RF) and microwave circuits to provide a fixed amount of signal gain. A
gain block is a broadband device that amplifies weak signals without significantly
5 altering their characteristics, such that the output signal maintains the same
frequency and phase as the input.
[0065] As used herein, circulator refers to a passive, non-reciprocal three- or four-port device used in radio frequency (RF) and microwave systems to control the
10 direction of signal flow. The circulator allows a signal entering any port to be
transmitted to the next port in a circular manner while isolating the other ports facilitating unidirectional signal propagation. For example, in a three-port circulator, a signal entering port 1 will exit through port 2, a signal entering port 2 will exit through port 3, and a signal entering port 3 will exit through port 1.
15 Circulators are used to separate transmitted and received signals in duplex
communication systems, protect sensitive components from reflected signals, and enable the sharing of antennas for both transmitting and receiving signals.
[0066] As used herein, coupler refers to a passive electronic device used in radio
20 frequency (RF) and microwave systems to sample a portion of the signal without
significantly disturbing the main signal path. Couplers have four ports: an input
port, an output port, a coupled port, and an isolated port. The device allows a
predetermined fraction of the power from the input port to be directed to the coupled
port, while the majority of the signal passes through from the input port to the output
25 port. The isolated port absorbs any residual power to minimize reflections. Couplers
are used for various purposes, including signal monitoring, measurement, feedback, and splitting signals for multiple paths.
[0067] As used herein, copper coin refers to a specifically designed embedded
30 component that functions as a thermal ground to efficiently conduct heat away from
high-power components, such as GaN power amplifiers, to the system heat sink.
19

The copper coin is typically U-shaped and optimized in size to ensure excellent thermal conductivity without significantly increasing the thermal resistance between the PCB and the heat sink.
5 [0068] As used herein, radio frequency time division duplex (RFTDD) switch
refers to an electronic component used in RF communication systems to alternate
between transmit and receive modes on the same frequency band. The RFTDD
switch operates based on time-division duplexing, a technique where transmission
and reception occur at different time intervals, allowing the same frequency channel
10 to be used for both purposes without interference. The RF TDD switch rapidly
toggles the connection between the transmitter and receiver to the shared antenna, ensuring that each mode operates during its designated time slot.
[0069] As used herein, low noise amplifier refers to an electronic amplifier
15 designed to amplify very weak signals received by an antenna while adding as little
noise as possible to the signal. The low noise amplifier facilitates in maintaining signal integrity. The low noise amplifier boosts the signal strength without significantly increasing the noise level, a low noise amplifier (LNA) improves the overall signal-to-noise ratio for achieving clear and reliable communication. 20
[0070] As used herein, band-pass surface acoustic wave (SAW) filter refers that
selectively allow signals within a specific frequency band to pass through while
attenuating signals outside this band. The band-pass filter is designed to provide
precise control over the frequency range for signal processing in radio frequency
25 (RF) applications. Band-pass SAW filters are used to improve signal quality by
removing unwanted frequencies and noise.
[0071] As used herein, first matching network refers to a circuit within a radio
frequency (RF) system designed to match the impedance of the source with the
30 impedance of the load, thereby maximizing power transfer and minimizing
reflections. The first matching network comprises inductors, capacitors, and
20

transformers, arranged in a configuration to ensure that the impedance seen by the source is equal to the load impedance.
[0072] As used herein, receive chains refers to the series of electronic components
5 and circuits within a radio frequency (RF) system for processing incoming signals
from the antenna to the baseband processing unit. Each receive chain includes
elements such as a low noise amplifier (LNA) for initial signal amplification, a
band-pass surface acoustic wave (SAW) filter for frequency selection, and a
matching network for impedance matching. In advanced communication systems
10 like 5G New Radio (NR), multiple receive chains are often used to support multi-
antenna configurations, improving signal quality, reliability, and data throughput.
[0073] As used herein, observation chains refer to the feedback pathways within a
radio frequency (RF) system for monitoring real-time data associated with the
15 performance of the transmit chains. The observation chains include components
such as directional couplers and matching networks, which sample a portion of the transmitted signal and relay it back to the system's transceiver or digital processing unit.
20 [0074] As used herein, second matching network refers to a circuit within a radio
frequency (RF) system that ensures optimal impedance matching between components at a different stage in the signal path, distinct from the initial matching provided by the first matching network. The second matching network consists of inductors, capacitors, and other reactive elements configured to match the
25 impedance of the preceding stage with that of the subsequent stage, thereby
maximizing power transfer and minimizing signal reflections.
[0075] As used herein, switch refers to an electronic component used in radio
frequency (RF) systems to control the routing of signals between different paths or
30 circuits. Switches can be used to connect or disconnect circuits, select between
21

different signal sources or destinations, and manage the flow of signals in a controlled manner.
[0076] As used herein, low tangent loss refers to a property of dielectric materials
5 used in radio frequency (RF) and microwave circuits, indicating that the material
has minimal energy loss when an electromagnetic signal passes through it. Tangent
loss, or loss tangent, is a measure of the inefficiency of a material in terms of
dissipating energy as heat, quantified by the ratio of the imaginary part to the real
part of the dielectric constant. A low tangent loss material exhibits minimal energy
10 dissipation facilitates in maintaining signal integrity and efficiency in high-
frequency applications.
[0077] As used herein, backhaul connectivity refers to the communication link
between base stations (like gNodeB in 5G) and the core network, facilitating data,
15 control signals, and network management information transfer. This can be through
fibre optics, microwave links, or satellite connections, ensuring efficient data routing and seamless communication across the network.
[0078] As used herein, network processor refers to a processor or a microprocessor
20 that performs data packet processing functions within network devices, such as
routers, switches, and radio units. The network processors are designed to manage high-speed data flows and execute complex networking tasks, including packet classification, routing, encryption, and policy enforcement.
25 [0079] As used herein, RF Front end module refers to the component that processes
radio frequency signals between the antenna and the baseband section. The RF Front end module includes functions such as amplification, filtering, up conversion, and down conversion of RF signals. The RF Front end module comprises components such as power amplifiers, low noise amplifiers, mixers, and filters.
30
22

[0080] As used herein, an integrated baseband and transceiver board (IBTB) refers
to a compact, unified module that combines both the baseband processing and
transceiver functionalities essential for wireless communication systems. The IBTB
enhances efficiency by consolidating the signal processing and radio frequency
5 (RF) components into a single board, reducing the need for multiple separate
components and interconnections. The IBTB facilitates streamlined design, improved performance, and reduced power consumption, making it ideal for applications in modern wireless devices, such as smartphones, IoT devices, and other advanced communication systems.
10
[0081] As used herein, baseband and transceiver refer to components in communication systems. The baseband is the range of frequencies occupied by the original signal before modulation and typically includes all the frequencies from zero up to the highest frequency in the signal. It processes data such as filtering,
15 encoding, and decoding. The transceiver, a combination of a transmitter and a
receiver, enables bidirectional communication by transmitting and receiving signals. In wireless communication, the transceiver modulates the baseband signal onto a carrier frequency for transmission and demodulates received signals back to the baseband for processing.
20
[0082] As used herein, the solder refers to a fusible metal alloy used to join together metal workpieces by melting and flowing into the joint, where it solidifies to create a strong, electrically conductive, and permanent bond between the components.
25 [0083] As used herein, Doherty configuration refers to an amplifier design that
enhances efficiency, particularly at power back-off levels. The Doherty amplifier uses a combination of a carrier amplifier, which operates linearly, and a peaking amplifier, which activates only during high-power demands. The Doherty configuration allows the carrier amplifier to handle lower power levels, maintaining
30 linearity and reducing power consumption, while the peaking amplifier
supplements the carrier amplifier during higher power levels, thereby ensuring
23

higher efficiency and performance across a wide range of operating conditions. This dual-stage operation significantly improves the overall efficiency and output power of the amplifier.
5 [0084] As used herein, daughter cards refers to auxiliary circuit boards that are
connected to the main motherboard or primary circuit board to provide additional
functionality or features. These cards are typically attached via connectors and
allow for expansion or customization of the primary system without the need to
redesign or alter the main board. Daughter cards can include components such as
10 additional memory, processing units, or specific input/output interfaces, thereby
enhancing the versatility and capability of the primary hardware setup.
[0085] As used herein, multilayer substrate refers to a type of circuit board
composed of multiple layers of conductive and insulating materials stacked
15 together. These layers are interconnected through vias and are designed to support
complex electrical circuits by providing separate paths for signals, power, and ground planes.
[0086] As used herein, RF shield refers to a protective enclosure or barrier designed
20 to prevent electromagnetic interference (EMI) and radio frequency interference
(RFI) from affecting sensitive electronic components and circuits. This shielding is
made from conductive materials and is used to contain or block unwanted
electromagnetic waves, ensuring that electronic devices operate without disruption
from external or internal sources of interference. RF shields are essential in
25 maintaining the integrity and performance of electronic systems, especially in
environments with high levels of electromagnetic activity.
[0087] As used herein, FIP based shield wall refers to a form-in-place shielding
technique used to create a physical barrier on electronic components for
30 electromagnetic interference (EMI) protection. This technique involves applying a
conductive or non-conductive gasket material directly onto the device, which then
24

cures to form a custom-fit shield. The FIP based shield wall ensures effective isolation between different sections of a circuit, thereby preventing EMI and maintaining signal integrity in high-frequency applications.
5 [0088] As used herein, four transmit four receive (4T4R) refers to a configuration
in which a radio frequency front end (RFFE) board is equipped with four distinct transmit chains and four distinct receive chains. Each transmit chain is responsible for signal transmission and includes components such as matching baluns, pre-driver amplifiers, Doherty driver amplifiers, and Doherty-based Gallium Nitride
10 (GaN) power amplifiers. Similarly, each receive chain is dedicated to signal
reception and includes low noise amplifiers, band-pass surface acoustic wave (SAW) filters, and matching networks. The 4T4R setup enhances the performance and efficiency of 5G NR integrated macro gNodeB (gNB) systems by optimizing signal transmission and reception processes.
15
[0089] As discussed in the background section, traditional systems often use Class AB amplifiers in the driver stage, which provides low output power and leads to low efficiency. This is especially a problem when high order QAM transmissions are used, which have a high peak to average power ratio (PAPR) and require a linear
20 RF amplifier. Prior designs may face performance degradation due to parasitic
effects associated with multilayer substrate use, leading to impedance mismatches. Existing designs may struggle with dissipating the heat generated by high-power GaN-based power amplifiers, leading to potential overheating issues. The use of separate daughter cards for the digital control circuit, the use of large isolators, and
25 the requirement for mating connectors, all increase the overall size and cost of the
system. Current designs may not adequately shield the input and output sides of the power amplifier, leading to electromagnetic interference that can degrade performance. Prior solutions may not use the available board space effectively, resulting in a less compact system.
30
25

[0090] To overcome these and other inherent problems in the art, the present
disclosure proposes a solution of using a novel Doherty Driver amplifier in the RF
Front End board, instead of the conventional Class AB amplifier. The Doherty
Driver amplifier facilitates significantly improving the system's efficiency by
5 providing superior performance in terms of back-off efficiency. The Doherty
technique allows the system to handle high-order QAM transmissions with high peak-to-average power ratios (PAPR) while maintaining linearity and reducing power consumption. Furthermore, the invention addresses the issue of parasitic effects and impedance mismatches in the multilayer substrate by tuning the input
10 and output elements of the high-power RF GaN Amplifier in a Doherty
configuration. The high-power RF GaN Amplifier in a Doherty configuration ensures maximum performance of the power amplifier in terms of output power and efficiency. To tackle the challenge of heat dissipation, the invention introduces an innovative thermal management solution. It employs a unique method of providing
15 thermal ground by embedding a U-shaped copper coin into the PCB, which
conducts the dissipated heat efficiently from the high-power Doherty GaN power amplifier to the system sink. The design eliminates the need for depth or protrusion on the heat sink, resulting in a more compact and efficient system. The invention also simplifies the system's design by eliminating the use of separate daughter cards
20 for the digital control circuit and the need for mating connectors. The digital signal
routing and the complex RF section are integrated into a single multilayer substrate board, which meets the required performance while reducing the overall size and cost. Additionally, the invention incorporates an innovative RF shield with a Form-In-Place (FIP) based shield wall to provide partitioning between the input and
25 output sides of the final stage power amplifier. The RF shield with a Form-In-Place
(FIP) based shield wall ensures protection from electromagnetic interference and maintains the required isolation, further enhancing the system's performance. Lastly, the invention optimizes the use of board space by efficiently placing the RF components, such as GaN technology-based power amplifiers, in a four transmit
30 and four receive configuration. This compact placement ensures proper isolation
among the chains, leading to a more efficient and high-performing system.
26

[0091] It would be appreciated by the person skilled in the art that the present
invention provides a comprehensive solution to the challenges faced by traditional
systems, offering improvements in efficiency, thermal management, compactness,
5 and performance for the advancement of 5G NR Integrated Macro gNB technology.
[0092] Hereinafter, exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings.
10 [0093] FIG. 1 illustrates an exemplary block diagram of a system [100] for
providing a high-powered 5G New Radio (NR) integrated macro gNodeB (gNB) radio frequency front end (RFFE), in accordance with exemplary embodiments of the present disclosure. As shown in FIG. 1, the system [100] comprises at least four transmit chains [101], a cavity filter [102], an RFFE board [103], a gain block [104],
15 a matching balun [106], a pre-driver amplifier [108], a doherty driver amplifier
[110], a circulator [112], an externally connected 50-ohm termination resistance [112A], a coupler [114], a doherty-based GaN power amplifier [116], a coupler [118], a circulator [120], a radio frequency time division duplex (RF TDD) switch [122], a low noise amplifier [124], a band-pass SAW filter [126], a first matching
20 network [128], a gain block [130], at least four receive chains [131], a band pass
surface acoustic wave (SAW) filter [132], at least four observation chains [133], a second matching network [134], and a switch [138].
[0094] As shown in FIG. 1 the RFFE board [103] includes at least four transmit
25 chains [101] used for signal transmission. Each of the at least four transmit chains
[101] consists of a matching balun [106], a pre-driver amplifier [108], a Doherty Driver Amplifier [110], and a Doherty-based GaN power amplifier [116], which functions as the final stage power amplifier. These components, in sequence, ensure that the outgoing signal is properly amplified, optimized, and transmitted. 30
27

[0095] In addition to the transmit chains [101], the RFFE board [103] also includes
at least four receive chains [131] used for signal reception. Each of the at least four
receive chains [131] consists of a low noise amplifier [124], a band-pass Surface
Acoustic Wave (SAW) filter [126], and a first matching network [128]. The
5 components work together to capture incoming signals, amplify them, filter out
unwanted frequencies., and match the impedance for optimum reception. The desired output is received through the transceiver.
[0096] The RFFE board [103] further comprises at least four observation chains
10 [133]. The at least four observations chains [133] are feedback paths that lead from
the doherty-based GaN power amplifiers [116] back to the Field-Programmable
Gate Array (FPGA) or Application-Specific Integrated Circuit (ASIC) Transceiver
via coupler [118]. Each of the at least four observation chains [133] consists of a
low noise amplifier band pass SAW filter [132] and matching network. The at least
15 four observation chains [133] receives the output through the transceiver. The
purpose of at least four observation chains [133] is to provide feedback for linearization, essentially correcting any distortions that may occur during signal transmission.
20 [0097] As used herein, an Application-Specific Integrated Circuit (ASIC)
transceiver refers to a custom-designed integrated circuit specifically built to perform the functions of transmitting and receiving signals for a particular application. The ASIC transceivers are configured to provide optimized performance, power efficiency, and size. The ASIC transceivers are commonly used
25 in communication systems to manage signal processing tasks with high precision
and speed, providing reliable and efficient operation tailored to the unique needs of the application.
[0098] As used herein, a Field-Programmable Gate Array (FPGA) refers to an
30 integrated circuit that can be configured by the customer or designer after
manufacturing, making it highly adaptable for various applications. FPGAs consist
28

of an array of programmable logic blocks and a hierarchy of reconfigurable interconnects, allowing the logic blocks to be wired together to perform a wide range of functions, from simple logic operations to complex digital signal processing tasks. 5
[0099] Furthermore, the RF TDD switch [122] is integrated in the Receiver (Rx)
Front End via the circulator [120] to provide protection to the receiver from any
reverse transmit power coming from the antenna port [140]. This can occur under
port open conditions or due to impedance mismatch. Further, the circulator [120]
10 and a cavity filter [102] are positioned between each RF TDD switch [122] and the
corresponding antenna port [140]. The circulator [120] ensures that the RF signal follows only one direction, while the cavity filter [102] allows certain frequencies to pass through while blocking others.
15 [0100] Furthermore, the Integrated Baseband and Transceiver board (IBTB) [402]
provides control signals that guide the operation of the other components within the system. The control signals facilitate in controlling the components such as, but not limited only to circulator [112], low noise amplifier [124].
20 [0101] It would be appreciated by the person skilled in the art that the high-power
RF GaN Amplifier operates in a Doherty configuration such that the input and output elements can be finely tuned to mitigate the negative effects of parasitic effects that can arise from a multilayer substrate.
25 [0102] The system also incorporates an RF shield with a Form-In-Place (FIP) based
shield wall. The RF shield with the FIP protects the system from electromagnetic interference which could degrade performance. Further, the RF shield with the FIP also maintains the required isolation between the input and output sides of the Power amplifier, ensuring they function optimally without cross interference.
30
29

[0103] The copper coins are embedded in the RFFE board [103]. The embedded
copper coins provide thermal grounding for the doherty-based GaN power amplifier
[116]. The embedded copper coins facilitate in conducting and dissipating heat from
these high-power components to the system sink, thereby managing thermal loads.
5 The embedded copper coins are optimized in size to manage heat transfer and
electrical grounding, wherein the management of heat transfer and electrical grounding minimize the potential for performance issues.
[0104] Further, the circulator [112] further comprises the externally connected 50-
10 ohm termination resistance [112A]. The externally connected 50-ohm termination
resistance [112A] of the circulator [112] facilitates in avoiding any interstage
impedance mismatch and to provide isolation between the doherty driver amplifier
[110] and the doherty-based GaN power amplifier [116]. It would be appreciated
by the person skilled in the art that the innovative design of externally connected
15 50-ohm termination resistance [112A] makes it more compact and cost-effective
than using a traditional isolator.
[0105] The RFFE board [103] is a multilayer substrate. The multilayer substrate comprises six or more layers, wherein: first two layers of the one or more layers are
20 developed using high frequency, low tangent loss poly tetra fluoro ethylene (PTFE)
based RF substrate for providing superior RF performance; and other layers of the one or more layers are developed using high speed flame-retardant type-4 (FR4) dielectric material with high temperature sustainability. The RFFE Board [103] is optimized to deliver high output power while maintaining thermal efficiency. This
25 contributes to the system's overall power efficiency, cost-effectiveness, and
reliability in delivering telecommunication services.
[0106] The system [100] utilizes high order Quadrature Amplitude Modulation
(QAM) transmissions to increase the data transmission rate. High order QAM is a
30 modulation scheme that allows for the transmission of more bits per symbol,
thereby increasing the overall data rate. In addition to utilizing high order QAM,
30

the system employs the Doherty technique in the Doherty driver amplifier [110] to
enhance the performance of the RFFE board [103]. The Doherty amplifier is known
for its ability to improve efficiency, especially at back-off power levels, which are
common in communication systems employing high order modulation schemes like
5 QAM. It would be appreciated by the person skilled in the art that by combining
the high data rate capabilities of high order QAM with the efficiency improvements provided by the Doherty technique, the system is able to achieve high-performance transmission, making it well-suited for the demands of 5G NR communications.
10 [0107] The implementation of high order quadrature amplitude modulation (QAM)
transmissions significantly enhances the performance of the RFFE board by increasing data transmission rates. High order QAM, such as 256-QAM or higher, allows for more data to be transmitted over the same bandwidth by encoding multiple bits per symbol, thus improving spectral efficiency. Additionally, the
15 incorporation of Doherty technique in the Doherty driver amplifier [110] further
augments the RFFE board's performance by optimizing power efficiency and linearity. The Doherty amplifier's design, which includes a carrier and a peaking amplifier, ensures superior performance under varying power levels by maintaining high efficiency during back-off operations. It would be appreciated by the person
20 skilled in the art that the dual approach not only supports higher data throughput
but also ensures efficient power utilization, ultimately enhancing the overall effectiveness and reliability of the RFFE board [103] in 5G NR applications.
[0108] The system utilizes high order quadrature amplitude modulation (QAM) by
25 modulating the carrier signal in a way that it carries multiple bits per symbol. This
is achieved through the simultaneous variation of the amplitude of two carrier
waves, which are out of phase with each other by 90 degrees, hence the name
"quadrature." By doing this, the system can represent more data with each symbol,
effectively increasing the data transmission rate. For example, 256-QAM can
30 encode 8 bits per symbol, significantly increasing the throughput compared to
simpler modulation schemes like 16-QAM, which encodes only 4 bits per symbol.
31

It would be appreciated by the person skilled in the art that the encoding allows the
system to transmit larger amounts of data over the same bandwidth, enhancing the
overall spectral efficiency. The high order QAM increases data capacity, thus
optimizing the performance of the RFFE board [103] in high-speed 5G NR
5 applications.
[0109] FIG. 2 illustrates an exemplary block diagram [200] of 4T4R RF front end board doherty driver amplifier and final stage amplifier, in accordance with an embodiment of the present disclosure.
10
[0110] In operation, the input signal is fed into the Doherty Driver Amplifier [110], which serves as a preliminary stage to condition the signal for the main power amplification process. The Doherty Driver Amplifier [110] increases the power of the signal to a level suitable for driving the main amplification stage. Next, the
15 signal passes through the circulator [112] having an external 50-ohm termination
resistance, which functions as an isolator to protect the Doherty driver amplifier [110] from reflected power that could potentially come back from the load or subsequent stages. To enhance this protective function, an externally connected 50-ohm termination resistance [112A] is included. The 50-ohm termination resistance
20 helps prevent signal reflections within the system that can distort the signal and
reduce amplifier efficiency.
[0111] After passing through the circulator [112], the signal reaches the Coupler [114], a passive device that divides the signal into two paths or combines signals
25 from two paths. Thereafter, the divided signals are passed to the doherty-based GaN
power amplifier [116]. The divided signals are then fed into two distinct amplification paths: one goes through the Carrier Amplifier, and the other goes through the Peak Amplifier. The Carrier Amplifier provides amplification across the entire signal range, while the Peak Amplifier contributes additional power
30 during peak signal conditions, which enhances the efficiency of the system,
32

especially during high peak-to-average power ratio (PAPR) scenarios common in 5G signals.
[0112] Both amplification paths include "Input Matching" components which serve
5 to match the impedance of the input signals to the amplifiers, thus optimizing power
transfer and minimizing reflections. Similarly, "Output Matching" components are used after each amplifier to ensure that the amplified signals are appropriately matched to the load they will drive, again optimizing power transfer. After amplification, the signals from the Carrier and Peak amplifiers are recombined
10 using an Output Combiner. This component ensures that the contributions from
both amplifiers are coherently combined to form a single, high-power output signal. Finally, the combined signal is directed to the output, ready to be sent to an antenna for transmission. The schematic may include Gate Bias supply points which provide the necessary DC biasing for the Carrier and Peak amplifiers to operate correctly.
15 Also depicted is the VCC, which represents the primary power supply voltage for
the amplifiers.
[0113] It would be appreciated by the person skilled in the art that the RF front-end
delivers high output power with optimal efficiency, which is particularly important
20 for high-power applications such as 5G macro base stations. This configuration also
minimizes thermal load and electromagnetic interference, which are critical considerations in the design and operation of modern telecommunications equipment.
25 [0114] Referring to FIG. 3 an exemplary method flow diagram [300], providing a
high-powered 5G New Radio (NR) integrated macro gNodeB (gNB) Radio Frequency Front End (RFFE), in accordance with exemplary embodiments of the present disclosure is shown. In an implementation the method is performed by the system [100]. Further, in an implementation, the system [100] (partially or as a
30 whole) may be present in a server device or in a user device to implement the
33

features of the present disclosure. Also, as shown in Figure 3, the method starts at step [302].
[0115] At step [304], the method comprises initializing an RFFE board [103]. 5
[0116] At step [306], the method comprises amplifying signal transmission using at least four transmit chains [101], each of the at least four transmit chains [101] sequentially comprising a matching balun [106], a pre-driver amplifier [108], a Doherty driver amplifier [110], and a Doherty-based GaN power amplifier [116].
10 The matching balun [106] in each of the at least four transmit chains [101] serves
to match the impedances between unbalanced components to the balanced transmission line, optimizing power transfer and reducing signal reflection. Following the balun [106], the pre-driver amplifier [108] provides initial signal amplification before passing the signal to the Doherty driver amplifier [110], which
15 further amplifies the signal while maintaining high efficiency, especially when
operating at power levels below its maximum output, this is known as back-off efficiency. The amplified signal is then finally boosted to its required high-power level by the Doherty-based GaN power amplifier [116], which is specially designed to handle high power with superior performance in terms of efficiency and thermal
20 management.
[0117] At step [308], the method comprises capturing and refining signal reception through at least four receive chains [131], each of the at least four receive chains [131] systematically equipped with a low noise amplifier [124] for initial signal
25 amplification, a band-pass SAW filter [126] to selectively allow certain frequencies,
and a first matching network [128]. The low noise amplifier [124] amplifies the received signal without adding significant noise, thereby maintaining the signal's integrity. Subsequently, the band-pass SAW filter [126] is used to filter out unwanted frequencies and pass only the desired signal frequency band, thereby
30 improving the selectivity and performance of the receiver. The first matching
34

network [128] serves to match the impedance of the received signal to the rest of the receive chain, optimizing power transfer and minimizing reflection losses.
[0118] At step [310], the method comprises establishing feedback pathways using
5 at least four observation chains, the at least four observation chains [133] designed
as the feedback paths from the Doherty-based GaN power amplifiers [116] to a transceiver. Each of the at least four observation chains [133] contains a coupler [118] that serves to divert a portion of the RF energy from the output of the power amplifier for analysis, without affecting the transmitted signal's integrity. The
10 diverted signal is then processed through a second matching network [134], which
adjusts the impedance of the sampled signal to be compatible with the input requirements of the transceiver. This arrangement allows the transceiver to assess the characteristics of the amplified signal and provide necessary feedback for any corrective measures, such as through Digital Pre-Distortion (DPD) techniques, to
15 optimize the signal's linearity and overall transmission quality.
[0119] At step [312], the method comprises engaging a radio frequency time
division duplex (RF TDD) switch [122] integrated into a receiver front end to
provide protection against potential impedance mismatch or port open conditions,
20 preventing reverse transmit power from reaching the receiver [142]. The RF TDD
switch [122] ensures that during the transmit phase of the TDD cycle, any power that reflects back due to impedance mismatches or open ports does not travel back into the receiver circuitry.
25 [0120] At step [314], the method comprises directing RF signal propagation in a
uni-directional manner with a circulator [120] and refining the signal's frequency properties with a cavity filter [102]. The circulator [120] is placed in the signal path to ensure that the RF signal flows in one direction, effectively isolating the transmitter from the receiver to prevent interference. Concurrently, the cavity filter
30 [102] selectively filters the signal, allowing only the desired frequency band to pass
through while suppressing all others, which is essential for preventing out-of-band
35

interference and signal degradation. The strategic placement of the circulator [120] and the cavity filter [102] between the RF TDD switch [122] and the antenna port [140] facilitates in maintaining the purity and directionality of the RF signals as they are transmitted and received. 5
[0121] At step [316], the method comprises generating and transmitting control signals via an integrated baseband and transceiver board to guide operation of the other components. The control signals facilitate in controlling the components such as, but not limited only to circulator [112], low noise amplifier [124].
10
[0122] At step [318], the method comprises ensuring electromagnetic integrity by engaging a radio frequency shield integrated with a form-in-place (FIP) based shield wall, which is designed to perform one or more of shield the system from external electromagnetic interference, maintain isolation between the input and
15 output sides of the Doherty-based GaN power amplifier [116]. The FIP-based shield
wall provides a customizable and effective barrier against electromagnetic interference (EMI), ensuring that the sensitive components of the system are protected from unwanted electromagnetic fields. Additionally, maintaining isolation between the input and output sides of the power amplifier is essential to
20 prevent feedback loops and signal crosstalk, which can lead to distortion and
inefficiencies.
[0123] Thereafter, the process terminates at step [320].
25 [0124] The method comprises tuning the Doherty-based GaN power amplifier
[116] to mitigate potential negative effects arising from a multilayer substrate's parasitic effects. Parasitic effects, such as unwanted capacitances and inductances, can arise from the multilayer substrate used in the construction of the RFFE board [103] and can lead to signal distortion, reduced efficiency, and other performance
30 issues. The tuning corresponds to carefully adjusting the input and output matching
networks of the Doherty-based GaN power amplifier [116], the method effectively
36

counters the parasitic effects, ensuring optimal performance of the amplifier and, consequently, the overall system.
[0125] FIG. 4 illustrates an exemplary block diagram [400] of an Integrated
5 Baseband and Transceiver board (IBTB) [402] and an RFFE board [103], in
accordance with an embodiment of the present disclosure. The block diagram [400]
illustrates an Integrated Baseband and Transceiver board (IBTB) [402]. The IBTB
[402] further includes Network Processor [402a] and Baseband and Transceiver
[402b]. The block diagram further illustrates a blind mate connection [404]. The
10 RFFE board [103] and the IBTB is connected via at least one of a wired connection,
blind mate connection [404] using RF connectors and a wireless connection.
[0126] The backhaul interface facilitates the high-speed transfer of data, control signals, and network management information, which is essential for maintaining
15 seamless communication and network performance. The backhaul interface is
integrated within the IBTB [402]. The backhaul interface may include an optical interface (such as 10G optical interface) to establish a reliable backhaul connection. The backhaul interface supports the large bandwidth requirements of 5G networks, enabling the efficient transmission of data between the radio unit and the network
20 core.
[0127] FIG. 5 illustrates an exemplary block diagram [500] of a copper coin embedded into the RFFE board, in accordance with an embodiment of the present disclosure. The block diagram [500] illustrates the integration of copper coin [502]
25 embedded within the RFFE board [103] to facilitate efficient heat transfer from the
Doherty-based GaN power amplifier [116] along with its pins [116A], [116B] to at least a heat sink. The Doherty-based GaN power amplifier [116] and its pins [116A], [116B] is coupled to the copper coin [502] and the RFFE board [103] using the solder [504]. The Doherty-based GaN power amplifier [116] may be positioned
30 over the copper coin [502]. The Doherty-based GaN power amplifier [116] and its
pins [116A] and [116B] are soldered to a U-shaped depression in the copper coin
37

[502] via the solder [504]. The solder [504] is placed between the Doherty-based
GaN power amplifier [116], the RFFE board [103], and the copper coin [502] due
to which heat may be conducted to the copper coin [502]. The embedded copper
coin [502] facilitates in managing the thermal performance of the high-power RF
5 front end board, ensuring that the system operates within safe temperature limits
and maintains high efficiency.
[0128] The copper coin [502] are strategically placed in the multilayer PCB to serve as thermal conductors, channelling the dissipated heat from the Doherty-based GaN
10 power amplifier [116] directly to the heat sink. The method of embedding copper
coin provides a direct thermal path, significantly reducing the thermal resistance between the power amplifier and the heat sink. The result is an effective cooling mechanism that prevents overheating, which can degrade performance or damage sensitive components.
15
[0129] In addition to their thermal management function, the embedded copper coin [502] also contribute to electrical grounding. By providing a reliable ground plane, these copper inserts help maintain the electrical integrity of the circuit, ensuring stable and consistent operation. It would be appreciated by the person
20 skilled in the art that the dual function of heat transfer and electrical grounding
makes the use of copper coin a highly efficient solution for managing the operational stresses on the RFFE board [103].
[0130] The optimization of the size and placement of the copper coin [502] is
25 essential. The copper coin [502] are designed to offer the maximum thermal
performance without unnecessarily increasing the complexity or cost of the PCB.
The U-shaped configuration of the copper coin facilitates in providing effective
grounding and thermal pathways, enhancing the overall durability and reliability of
the RF front end system. Thus, the integration of copper coin [502] in the RFFE
30 board [103] addresses both thermal and electrical challenges in high-power RF
applications. Please note that although only one copper coin is shown for illustration
38

purposes, the system described herein may include multiple such copper coins as
part of its standard configuration or operation. The depiction of a single coin is
intended to simplify the explanation and does not limit the actual implementation
or scope of the system, which may involve various quantities and arrangements of
5 copper coins to achieve the desired functionality and performance.
[0131] Further, in accordance with the present disclosure, it is to be acknowledged that the functionality described for the various components/units can be implemented interchangeably. While specific embodiments may disclose a
10 particular functionality of these units for clarity, it is recognized that various
configurations and combinations thereof are within the scope of the disclosure. The functionality of specific units, as disclosed in the disclosure, should not be construed as limiting the scope of the present disclosure. Consequently, alternative arrangements and substitutions of units, provided they achieve the intended
15 functionality described herein, are considered to be encompassed within the scope
of the present disclosure.
[0132] As is evident from the above, the present disclosure provides a technically advanced solution for delivering high power and efficient 5G coverage using a
20 4T4R RF Front End Board for an integrated macro gNodeB (gNB). By
incorporating a Doherty Driver amplifier in place of conventional Class AB amplifiers, the system optimizes back-off efficiency. The high-power RF GaN amplifiers are finely tuned to mitigate parasitic effects from the multilayer substrate, thereby maximizing performance. Additionally, the RF shield with a Form-In-Place
25 (FIP) based wall maintains necessary isolation between input and output sides of
the power amplifier, providing robust electromagnetic interference protection. The innovative use of a standard RF circulator with an externally connected 50-ohm termination resistance reduces size and cost while ensuring proper impedance matching and isolation. Embedded copper coins in the PCB offer exceptional
30 thermal conductivity, ensuring efficient heat dissipation from the high-power
amplifiers. The system also utilizes a hybrid multilayer substrate combining high-
39

frequency, low-tangent loss PTFE layers with high-temperature sustainable FR4
dielectric layers, thereby enhancing overall RF performance. The elimination of
separate daughter cards for digital control circuits in favour of an integrated
multilayer substrate simplifies the design and reduces costs. The integration of RF
5 components within a compact board ensures proper isolation among transmit and
receive chains, presenting a cost-effective and thermally efficient solution that meets all RF performance requirements, leading to significant operational expenditure (OPEX) benefits.
10 [0133] While considerable emphasis has been placed herein on the disclosed
embodiments, it will be appreciated that many embodiments can be made and that many changes can be made to the embodiments without departing from the principles of the present disclosure. These and other changes in the embodiments of the present disclosure will be apparent to those skilled in the art, whereby it is to
15 be understood that the foregoing descriptive matter to be implemented is illustrative
and non-limiting.
ADVANTAGES OF THE PRESENT INVENTION
20 [0134] The present disclosure provides a method and system for optimizing high
powered 5G NR integrated macro gNodeB.
[0135] The present disclosure provides a method and system for optimizing high
powered 5G NR integrated macro gNodeB that enhances energy efficiency by
25 implementing a Doherty amplifier in the RF Front End board, which performs more
efficiently than conventional Class AB amplifiers, particularly in terms of back-off efficiency.
[0136] The present disclosure provides a method and system for optimizing high
30 powered 5G NR integrated macro gNodeB that includes an innovative use of
40

embedded copper coins in the PCB to conduct and dissipate heat more efficiently from high-power Doherty GaN power amplifiers to the system sink.
[0137] The present disclosure provides a method and system for optimizing high
5 powered 5G NR integrated macro gNodeB that minimizes the parasitic effects of
multilayer substrates by tuning the input and output elements of the high-power RF GaN Amplifier in a Doherty configuration.
[0138] The present disclosure provides a method and system for optimizing high
10 powered 5G NR integrated macro gNodeB that ensure electromagnetic interference
protection by providing partition between the input and output side of the final stage Power amplifier using Form-In-Place (FIP) based shield wall.
[0139] The present disclosure provides a method and system for optimizing high
15 powered 5G NR integrated macro gNodeB that streamlines impedance matching by
using ab off-the-shelf RF Circulator as an Isolator, with the option to replace externally connected 50ohm termination resistors, thereby avoiding any inter-stage impedance mismatch.
20 [0140] The present disclosure provides a method and system for optimizing high
powered 5G NR integrated macro gNodeB that optimizes space and cost by compactly placing RF components within a limited board space, maintaining proper isolation among the chains, and optimizing the use of space and costs.
25 [0141] The present disclosure provides a method and system for optimizing high
powered 5G NR integrated macro gNodeB that eliminates the use of any daughter cards for digital control circuit and the required mating connectors. The digital signal routing and complex RF section is accommodated into a single multilayer substrate board, which simplifies the system and reduces costs.
30
41

[0142] While considerable emphasis has been placed herein on the disclosed
embodiments, it will be appreciated that many embodiments can be made and that
many changes can be made to the embodiments without departing from the
principles of the present disclosure. These and other changes in the embodiments
5 of the present disclosure will be apparent to those skilled in the art, whereby it is to
be understood that the foregoing descriptive matter to be implemented is illustrative and non-limiting.
42

I/We Claim:
1. A system [100] for providing a 5G New Radio (NR) integrated macro
gNodeB (gNB) radio frequency front end (RFFE), the system [100] comprising:
an RFFE board [103], comprising:
at least four transmit chains [101], each of the at least four transmit chains sequentially comprising a matching balun [106], a pre-driver amplifier [108], a doherty driver amplifier [110], and a doherty-based Gallium Nitride (GaN) power amplifier [116];
at least four receive chains [131], each of the at least four receive chains systematically equipped with a low noise amplifier [124], a band-pass SAW filter [126] to selectively allow certain frequencies, and a first matching network [128]; and
at least four observation chains [133] designed as feedback paths from the doherty-based GaN power amplifiers [116] to a transceiver, the at least four observation chains [133] comprises a coupler [118] and a second matching network [134];
a radio frequency time division duplex (RF TDD) switch [122] integrated into a receiver front end; and
a circulator [120], and a cavity filter [102] positioned between each RF TDD switch [122] and corresponding antenna port [140]; an integrated baseband and transceiver board (IBTB) [402] for generating and transmitting control signals; and
a radio frequency shield integrated with a form-in-place (FIP) based shield wall to maintain isolation between input and output ends of the doherty-based GaN power amplifier [116].

2. The system as claimed in claim 1, further comprising a copper coin [502] embedded in the RFFE board [103] to enable transfer of heat from the doherty-based GaN power amplifier [116] to at least a heat sink.
3. The system [100] as claimed in claim 2, wherein the embedded copper coins [502] enable performing of at least one of management of heat transfer and electrical grounding.
4. The system [100] as claimed in claim 1, wherein the circulator [112] further comprising an externally connected 50-ohm termination resistance [112A] to at least one of: mitigate interstage impedance mismatch and to provide isolation between the doherty driver amplifier [110] and doherty-based radio frequency (RF) Gallium Nitride (GaN) power amplifier [116].
5. The system [100] as claimed in claim 1, wherein the RFFE board [103] comprises a multilayer substrate having six or more layers, wherein:
a first layer and a second layer of the six or more layers comprises poly tetra fluoro ethylene (PTFE) based RF substrate for providing superior RF performance; and
other layers of the six or more layers comprises flame-retardant type-4 (FR4) dielectric material having high temperature sustainability.
6. The system [100] as claimed in claim 1, wherein the system utilizes high order quadrature amplitude modulation (QAM) transmissions to at least one of: increase data transmission rate, and doherty technique in the doherty driver amplifier [110] increases performance of the RFFE board [103].
7. The system [100] as claimed in claim 1, wherein the RF shield with the FIP based shield wall is designed to maintain isolation between the input and output sides of the doherty-based GaN power amplifier [116].

8. The system [100] as claimed in claim 1, wherein the radio frequency time division duplex (RF TDD) switch [122] integrated into the receiver front end is configured to provide protection against potential impedance mismatch or port open conditions, preventing reverse transmit power from reaching the receiver [142].
9. A method for providing a 5G New Radio (NR) integrated macro gNodeB (gNB) Radio Frequency Front End (RFFE), the method comprising:
initializing an RFFE board [103];
amplifying signal transmission using at least four transmit chains [101], each of the at least four transmit chains [101] sequentially comprising a matching balun [106], a pre-driver amplifier [108], a doherty driver amplifier [110], and a doherty-based GaN power amplifier [116];
capturing and refining signal reception through at least four receive chains [131], each of the at least four receive chains [131] systematically equipped with a low noise amplifier [124] for initial signal amplification, a band-pass SAW filter [126] to selectively allow certain frequencies, and a first matching network [128];
establishing feedback pathways using at least four observation chains [133], the at least four observation chains [133] designed as the feedback paths from the doherty-based GaN power amplifiers [116] to a transceiver, the at least four observation chains [133] comprises a coupler [118] and a second matching network [134];
engaging a radio frequency time division duplex (RF TDD) switch [122] integrated into a receiver front end;
positioning a circulator [120] and a cavity filter [102] between each RF TDD switch [122] and corresponding antenna port [140];
generating and transmitting control signals via an integrated baseband and transceiver board to guide operation of the other components; and
ensuring electromagnetic integrity by engaging a radio frequency shield integrated with a form-in-place (FIP) based shield wall to maintain isolation

between the input and output ends of the doherty-based GaN power amplifier [116].
10. The method as claimed in claim 9, further comprises embedding a copper coin in the RFFE board [103] to enable transfer of heat from the doherty-based GaN power amplifier [116] to at least a heat sink.
11. The method as claimed in claim 10, wherein the embedded copper coins enable performing of at least one of management of heat transfer and electrical grounding.
12. The method as claimed in claim 9, wherein the circulator further comprises providing an externally connected 50-ohm termination resistance [112A] to mitigate interstage impedance mismatch and to provide isolation between the doherty driver amplifier [110] and doherty-based radio frequency (RF) Gallium Nitride (GaN) power amplifier [116].
13. The method as claimed in claim 9, wherein the RFFE board [103] comprises a multilayer substrate comprises six or more layers, wherein:
a first layer and a second layer of the six or more layers comprises poly tetra fluoro ethylene (PTFE) based RF substrate for providing superior RF performance; and
other layers of the six or more layers comprises flame-retardant type-4 (FR4) dielectric material having high temperature sustainability.
14. The method as claimed in claim 9, wherein the method comprises utilizing
high order quadrature amplitude modulation (QAM) transmissions to
increase data transmission rate, and doherty technique in the doherty driver
amplifier [110] increases performance of the RFFE board [103].

15. The method as claimed in claim 9, wherein the RF shield with the FIP based shield wall is designed to maintain isolation levels, between the input and output sides of the doherty-based GaN power amplifier [116].
16. The method as claimed in claim 9, wherein the radio frequency time division duplex (RF TDD) switch [122] integrated into the receiver front end is configured to provide protection against potential impedance mismatch or port open conditions, preventing reverse transmit power from reaching the receiver [142].