Description:FORM – 2

THE PATENTS ACT, 1970
(39 of 1970)
&
THE PATENTS RULES, 2003

COMPLETE SPECIFICATION
(SEE SECTION 10, RULE 13)

SYSTEM AND METHOD OF HIGH ISOLATION MULTICHANNEL COMPACT MICROWAVE MODULE

BHARAT ELECTRONICS LIMITED
HAVING ADDRESS , OUTER RING ROAD,
NAGAVARA, BANGALORE -560045, KARNATAKA, INDIA

THE FOLLOWING SPECIFICATION PARTICULARLY DESCRIBES THE INVENTION AND THE MANNER IN WHICH IT IS TO BE PERFORMED.


TECHNICAL FIELD
The present invention relates to the RF and Microwave field. The invention, more particularly, relates to techniques for realization of oscillation free, phase matched, flat response, high isolation multichannel compact microwave module.
BACKGROUND
In general, RF sensor detects reflected/scattered RF signal from the object within specified range and provides continuous updates of range and range rate of the detected object. Realization of such high power multi-channel local oscillator microwave module controlled by Tx/Rx mode possess realization engineering and assembly challenges. While doing so it ends up flatness issues, prone to oscillate, nonlinear phase over the band and unwanted leakage signals to adjacent channels. Thus, a very accurate RF laying out planning with proper power management techniques is required to fulfil the requirements. Implementation of well thought-out tactics require proper design realization engineering with availability of components in the market keeping minimum effects of above described issues. Related disclosed prior arts, which discusses the multichannel multisource, LO signals in Mobile communication and Ku Band frequency are as follows.
WO2012152030A1 “A method and device for handling a local oscillation signal" disclosed the distribution of power amplified, multiple, stable local oscillator signals dynamically into multiple channels to meet the inverter driving requirements and talk about conserving PCB and component cost by increasing degree of integration of components.
CN102361438A “A method and device for improving the drive capability of a local oscillator" discloses a method and device for improving the drive capability of a local oscillator, relating to a local oscillator drive technology in the field of mobile communication. The method comprises the steps of: selecting a local oscillator signal suitable for a mobile communication application wherein it carrying out power amplification on the selected oscillator signal; dividing the local oscillator signal into a plurality of paths of equal-amplitude in-phase signals for frequency converters. By using the method, under the condition that a certain local oscillator signal is dynamically input, a plurality of paths of fixed local oscillator signals can be output and the level requirement of the frequency converter on the local oscillator drive can be met.
In journal article “Some Investigations on Direct Substrate-Attachment Process for Wideband Instantaneous Frequency Measurement Receiver Development" document Some critical investigations on direct substrate attachment process over double-sided metallic housing have been discussed in this article under wideband instantaneous frequency measurement receiver development in detail. Conventional reflow method-based substrate-attachment techniques have many issues when the surface area becomes larger. One of the major issues is that it forms unwanted voids beneath the substrate, which affects phase performances at higher frequencies. To overcome these issues, a direct substrate-attachment process has been carried out under inert environment using a customized vapour phase assembly (VPA) process.
CN201114052Y “A ku local oscillator multiple output system" comprising a horizontal input signal and a vertical input signal, wherein, the horizontal input signal and the vertical input signal are respectively processed by a low-noise amplifier. The output signals pass through a power splitter and band pass filter to become 4 paths; mixed with a 9.75 GHz medium oscillator or a 10.6 GHz medium oscillator. After the frequency mixing, the four paths of signals are accessed into a 4x2 radio frequency multiple-way switch after processed by a low pass filter and intermediate frequency amplifier. The 4x2 radio frequency multiple-way switch outputs two paths of signals which are respectively outputted by the intermediate frequency amplifier. The ku local oscillator multiple output system has low cost, good reliability, low power consumption, high isolation and high level of integration.
There is therefore felt a need of an invention which provides a system and method for realization of oscillation free, phase matched, flat response, high isolation multichannel compact microwave module.
OBJECT OF THE INVENTION
The principal object of the embodiments herein is to provide a system for realization of oscillation free, phase matched, flat response, high isolation multichannel compact microwave module.
Another object of the embodiments herein is to provide a method for realization of oscillation free, phase matched, flat response, high isolation multichannel compact microwave module.
SUMMARY OF THE INVETION
The present invention provides pulsed RF sensors capable of operating in wide dynamic range with precision and configurability. This invention improves the design approaches in unique way with better performance capable of operating in high isolation multi-channel flat response of microwave module.
In one aspect, a system (10) for realization of high isolation multichannel compact microwave module comprises a cluster-1 connected to cluster-2, the cluster-1 further comprises a Tx/Rx mode single pole double through (SPDT) (20) connected to an RF absorption (40) and a first high frequency output matching circuit (30) wherein the first high frequency output matching circuit (30) is connected to the cluster -2; the cluster-2 connected to a cluster-3, the cluster-2 further comprises a high RF gain block amplifier (50) connected to a bias control circuit (120) and a second high frequency output matching circuit (60), wherein the second high frequency output matching circuit (60) is connected to the cluster -3; and the cluster-3 further comprises a high frequency multi-way power distribution component (70) connected to a plurality of phase matched RF power distribution network (80, 90, 100 and 110) as a RF output.
BRIEF DESCRIPTION OF ACCOMPANYING DRAWINGS
The detailed description is described with reference to the accompanying figures. In the figures, the left-most digit(s) of a reference number identifies the figure in which the reference number first appears. The same numbers are used throughout the drawings to reference like features and modules.
Figure 1 illustrates a block diagram depicting high isolation multichannel compact microwave module, according to an exemplary implementation of the present invention.
Figure 2 illustrates a schematic diagram depicting various clusters (cluster1, cluster2 and cluster3) of microwave module, according to an exemplary implementation of the present invention.
Figure 3 illustrates a block diagram depicting Cluster-1, according to an exemplary implementation of the present invention.
Figure 4 illustrates a block diagram depicting Cluster-2, according to an exemplary implementation of the present invention.
Figure 5 illustrates a block diagram depicting Cluster-3, according to an exemplary implementation of the present invention.
Figure 6 illustrates a layout design depicting multi-layer details of PCB supporting high RF power in high isolation compact multichannel microwave module. according to an exemplary implementation of the present invention.
Figure 7 illustrates a Tx/Rx mode-controlled switching circuit, according to an exemplary implementation of the present invention.
Figure 8 illustrates a high P1 dB RF gain block 50 and its biasing and filtering circuit 150, according to an exemplary implementation of the present invention.
Figure 9 illustrates a high frequency multi-way power distribution component, according to an exemplary implementation of the present invention.
It should be appreciated by those skilled in the art that any block diagrams herein represent conceptual views of illustrative methods embodying the principles of the present invention. Similarly, it will be appreciated that any flow charts, flow diagrams, and the like represent various processes which may be substantially represented in computer readable medium and so executed by a computer or processor, whether or not such computer or processor is explicitly shown.
DETAILED DESCRIPTION
The various embodiments of the present invention describe about techniques for allowing authorized access to any computing devices enabled with biometric sensors.
In the following description, for purpose of explanation, specific details are set forth in order to provide an understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without these details. One skilled in the art will recognize that embodiments of the present invention, some of which are described below, may be incorporated into a number of systems.
However, the systems and methods are not limited to the specific embodiments described herein. Further, structures and devices shown in the figures are illustrative of exemplary embodiments of the present invention and are meant to avoid obscuring of the present invention.
It should be noted that the description merely illustrates the principles of the present invention. It will thus be appreciated that those skilled in the art will be able to devise various arrangements that, although not explicitly described herein, embody the principles of the present invention. Furthermore, all examples recited herein are principally intended expressly to be only for explanatory purposes to help the reader in understanding the principles of the invention and the concepts contributed by the inventor to furthering the art and are to be construed as being without limitation to such specifically recited examples and conditions. Moreover, all statements herein reciting principles, aspects, and embodiments of the invention, as well as specific examples thereof, are intended to encompass equivalents thereof.
In one embodiment, a system (10) for realization of high isolation multichannel compact microwave module comprises a cluster-1 connected to cluster-2, the cluster-1 further comprises a Tx/Rx mode single pole double through (SPDT) (20) connected to an RF absorption (40) and a first high frequency output matching circuit (30) wherein the first high frequency output matching circuit (30) is connected to the cluster -2; the cluster-2 connected to a cluster-3, the cluster-2 further comprises a high RF gain block amplifier (50) connected to a bias control circuit (120) and a second high frequency output matching circuit (60), wherein the second high frequency output matching circuit (60) is connected to the cluster -3; and the cluster-3 further comprises a high frequency multi-way power distribution component (70) connected to a plurality of phase matched RF power distribution network (80, 90, 100 and 110) as a RF output.
In another embodiment, wherein the cluster-1 provides mechanism of Tx/Rx mode controlled high isolation better than 50 dB to drive cluster-2; and wherein the cluster-2 provides oscillation free RF gain build up to drive the cluster-3.
In another embodiment, the cluster-1 comprises a switch mode DC power supply with capacitive filtering (150) with a Tx/Rx control line.
In another embodiment, the RF absorption (40) is a 50-ohm power dissipating resistor.
In another embodiment, the cluster-2 comprises a switch mode DC power supply (50).
In another embodiment, wherein the high RF gain block amplifier (50) is a high P1 dB RF gain amplifier.
In another embodiment, the bias control circuit (120) of cluster-2 provides capacitive filtering and provision of gate voltage adjustment for tuning purpose along with the second high frequency output matching circuit (60) to drive the cluster-3.
In another embodiment, the system (10) provides Tx/Rx mode controlled high power RF drive for multi-channel receivers (80, 90, 100 and 110) down converting antenna picks into IF signal and maintain flat response over frequency band.
In another embodiment, the system (10) provides zig-zag routed RF tracks in a way to provide electrical matched response with high frequency power distribution and weaken EM field coupling between adjacent channels driving next stage by the output ports (P1, P2, P3 and P4).
In another embodiment, the system (10) is implemented on multi-layer arrangements of PCB within the microwave module having dimension of 77mm x 30mm, interfaces for RF and DC interconnections; and via transition stack between layer1 to Layer3 for power supply, control signal routing and layer1 to layer4 for grounding.
Referring to figure 1, the block diagram of a system (10) for realization of scalable architecture compact high isolation multichannel compact microwave module as shown in Figure 1. The module provides Tx/Rx mode controlled high power RF drive for down converting antenna picks in multi-channel receivers having flat response over frequency band.
Referring to figure 2, a schematic diagram depicting various clusters of microwave module as shown in Figure 2. Cluster-1 is connected to cluster -2 and cluster -2 is connected to cluster -3 which provide Tx/Rx mode controlled high power RF drive for down converting antenna picks in multi-channel receivers having flat response over frequency band.
Figure 3 illustrates a block diagram depicting Cluster-1 consists of with Tx/Rx mode single pole double through (SPDT) (20), 50-ohm power dissipating resistor (40) for achieving isolation (better than 50dB) and first high frequency output matching circuit (30). Cluster-1 is having switch mode DC power supply with capacitive filtering (150) and Tx/Rx control line, according to an exemplary implementation of the present disclosure. Cluster 1 provides mechanism of Tx/Rx mode controlled high isolation (better than 50dB) with impedance matching circuit to drive cluster-2.
Figure 4 illustrates a block diagram depicting Cluster-2 consists of high P1 dB RF gain block (50) and bias control (120). Cluster-2 is having switch mode DC power supply and second high frequency output matching circuit (60), according to an exemplary implementation of the present disclosure. Cluster 2 provides oscillation free RF gain build up having capacitive filtering and provision of gate voltage adjustment using bias control (120) for tuning purpose along with impedance matching circuit to drive cluster-3.
Figure 5 illustrates a block diagram depicting Cluster-3 consists of high frequency multi-way power distribution component (70) along with phase matched RF power distribution network terminated by output ports (80, 90, 100 and 110), according to an exemplary implementation of the present disclosure. RF tracks are routed in zig-zag manner to provide electrical matched response and weaken EM field coupling between adjacent channels driving next stage.
Figure 6 illustrates a layout design depicting multi-layer details of PCB supporting high RF power in high isolation multichannel compact microwave module. It has interfaces for RF (SMA connector) and DC interconnections and via transition stack up (between layers), according to an exemplary implementation of the present disclosure. Via transition sandwiched between Layer1 to Layer3 are used for power supply and control signal routing. Via transition between Layer1 to Layer4 are used for grounding.
Figure 7 illustrates Tx/Rx mode controlled switching circuit in Single pole double through (SPDT) mode 20, filtering circuit (150), 50-ohm power dissipating resistor (40) for improved isolation along with output matching circuit to drive input of RF gain block. It shows active pads mounting alignment and exposed pad grounding assembly process maintain typical temperature of 250^0 C± 2 at component 20 footprint on PCB ensuring less than 5% void formation in Cluster-1 followed by other components (capacitor, resistor etc.) assembly at 350^0 C± 2, according to an exemplary implementation of the present disclosure. Assembly process conditions and sequence of to be followed for critical components in present cluster as per present disclosure assures best provision of heat dissipation in Tx/Rx mode controlled switch for improved isolation to drive cluster-2.
Figure 8 illustrates high P1 dB RF gain block (50) and its biasing and filtering circuit (150). It shows active pads mounting alignment and exposed pad grounding assembly process maintain typical temperature of 250^0 C± 2 at component (50) footprint on PCB ensuring less than 5% void formation in Cluster-2 followed by other components assembly at 350^0 C± 2, according to an exemplary implementation of the present disclosure. Assembly process conditions and sequence of to be followed for critical components in present cluster as per present disclosure assures grounding of exposed pad for heat dissipation in High power gain block for high p1 dB. Capacitive filtering and provision of gate voltage adjustment helps in tuning along with impedance matching circuit to drive cluster3.
Figure 9 illustrates high frequency multi-way power distribution component (70) along with phase matched RF power distribution network terminated by output ports (80, 90, 100 and 110). Assembly process maintain typical temperature of 250^0 C± 2 at component 70 footprint on PCB ensuring less than 5% void formation in Cluster-3. It shows 1 mil double stand gold wire 130 bonding process via ribbon bond gold standoff (140) followed by other components assembly at 350^0 C± 2, according to an exemplary implementation of the present disclosure. Assembly process conditions and sequence of to be followed for critical components in present cluster as per present disclosure assures high power flat response of multi channels over the band. Routing of RF tracks is done in zig-zag manner to provide electrical matched response and weaken EM field coupling between adjacent channels driving next stage. In case of long RF Track PBC’s for avoidance of phase mismatch due to non-uniform grounding process of Vapour Phase Assembly (VPA) at constant temperature has to performed, according to an exemplary implementation of the present disclosure.
The foregoing description of the invention has been set merely to illustrate the invention and is not intended to be limiting. Since modifications of the disclosed embodiments incorporating the substance of the invention may occur to person skilled in the art, the invention should be construed to include everything within the scope of the invention.
, Claims:
1. A system (10) for realization of high isolation multichannel compact microwave module comprising:
a cluster-1 connected to cluster-2, the cluster-1 comprising:
a Tx/Rx mode single pole double through (SPDT) switch (20) connected to an RF absorption (40) and first a high frequency output matching circuit (30) wherein the high frequency output matching circuit (30) is connected to the cluster -2;
the cluster-2 connected to a cluster-3, the cluster-2 comprising:
a high RF gain block amplifier (50) connected to a bias control circuit (120) and a second high frequency output matching circuit (60), wherein the second high frequency output matching circuit (60) is connected to the cluster -3; and
the cluster-3 comprising:
a high frequency multi-way power distribution component (70) connected to a plurality of phase matched RF power distribution network units (80, 90, 100 and 110) as a RF output.

2. The system (10) as claimed in claim1, wherein the cluster-1 provides mechanism of Tx/Rx mode controlled high isolation better than 50 dB to drive cluster-2; and
wherein the cluster-2 provides oscillation free RF gain build up to drive the cluster-3.

3. The system (10) as claimed in claim 1, wherein the cluster-1 comprises a switch mode DC power supply with capacitive filtering (150) with a Tx/Rx control line.

4. The system (10) as claimed in claim 1, wherein the RF absorption (40) is a 50-ohm power dissipating resistor.

5. The system (10) as claimed in claim 1, wherein the cluster-2 comprises a switch mode DC power supply (50).

6. The system (10) as claimed in claim 1, wherein the high RF gain block amplifier (50) is a high P1 dB RF gain amplifier.

7. The system (10) as claimed in claim 1, wherein the bias control circuit (120) of cluster-2 provides capacitive filtering and provision of gate voltage adjustment for tuning purpose along with the second high frequency output matching circuit (60) to drive the cluster-3.

8. The system (10) as claimed in claim 1, wherein the system (10) provides Tx/Rx mode controlled high power RF drive for multi-channel receivers (80, 90, 100 and 110) down converting antenna picks into IF signal and maintain flat response over frequency band.

9. The system (10) as claimed in claim 1, wherein the system (10) provides zig-zag routed RF tracks in a way to provide electrical matched response with high frequency power distribution and weaken EM field coupling between adjacent channels driving next stage by the output ports (P1, P2, P3 and P4).

10. The system as claimed in claim 1, wherein the system (10) is implemented on multi-layer arrangements of PCB within the microwave module having dimension of 77mm x 30mm, interfaces for RF and DC interconnections; and via transition stack between layer1 to Layer3 for power supply, control signal routing and layer1 to layer4 for grounding.