Abstract: The present invention addresses the problem of providing: a composition that has excellent residue removal performance and excellent anti-corrosion properties of a tungsten-containing film even when used after a predetermined period of time has passed since the production thereof, and is capable of inhibiting deterioration in electrical characteristics of a tungsten-containing film; and a method for producing the semiconductor element. The composition according to the present invention contains: an amine-containing compound that is at least one selected from the group consisting of sorbic acid, citric acid, ammonia, organic amines, quaternary ammonium compounds, and salts thereof; a specific compound having at least one group selected from the group consisting of a phosphono group and a phosphate group; and water. The composition has a pH of 4.0-9.0 at 25°C.
| # | Name | Date |
|---|---|---|
| 1 | 202447070817-STATEMENT OF UNDERTAKING (FORM 3) [19-09-2024(online)].pdf | 2024-09-19 |
| 2 | 202447070817-REQUEST FOR EXAMINATION (FORM-18) [19-09-2024(online)].pdf | 2024-09-19 |
| 3 | 202447070817-PROOF OF RIGHT [19-09-2024(online)].pdf | 2024-09-19 |
| 4 | 202447070817-PRIORITY DOCUMENTS [19-09-2024(online)].pdf | 2024-09-19 |
| 5 | 202447070817-NOTIFICATION OF INT. APPLN. NO. & FILING DATE (PCT-RO-105-PCT Pamphlet) [19-09-2024(online)].pdf | 2024-09-19 |
| 6 | 202447070817-FORM 18 [19-09-2024(online)].pdf | 2024-09-19 |
| 7 | 202447070817-FORM 1 [19-09-2024(online)].pdf | 2024-09-19 |
| 8 | 202447070817-DECLARATION OF INVENTORSHIP (FORM 5) [19-09-2024(online)].pdf | 2024-09-19 |
| 9 | 202447070817-COMPLETE SPECIFICATION [19-09-2024(online)].pdf | 2024-09-19 |
| 10 | 202447070817-FORM-26 [20-09-2024(online)].pdf | 2024-09-20 |
| 11 | 202447070817-FORM 3 [22-02-2025(online)].pdf | 2025-02-22 |