Abstract: The present invention addresses the problem of providing: a treatment solution for semiconductor devices, the treatment solution having an excellent ability to suppress surface roughness of a metal film containing cobalt; and a method for treating an object to be treated in which the treatment solution is used. The treatment solution of the present invention is to be used for semiconductor devices and comprises: water; a first component that is an alicyclic-type heterocyclic compound containing a nitrogen atom as a ring member atom; and a second component that is an alicyclic-type heterocyclic compound different from the first component and having a hydroxyl group.
| # | Name | Date |
|---|---|---|
| 1 | 202517100747-TRANSLATIOIN OF PRIOIRTY DOCUMENTS ETC. [17-10-2025(online)].pdf | 2025-10-17 |
| 2 | 202517100747-STATEMENT OF UNDERTAKING (FORM 3) [17-10-2025(online)].pdf | 2025-10-17 |
| 3 | 202517100747-REQUEST FOR EXAMINATION (FORM-18) [17-10-2025(online)].pdf | 2025-10-17 |
| 4 | 202517100747-PROOF OF RIGHT [17-10-2025(online)].pdf | 2025-10-17 |
| 5 | 202517100747-POWER OF AUTHORITY [17-10-2025(online)].pdf | 2025-10-17 |
| 6 | 202517100747-NOTIFICATION OF INT. APPLN. NO. & FILING DATE (PCT-RO-105-PCT Pamphlet) [17-10-2025(online)].pdf | 2025-10-17 |
| 7 | 202517100747-FORM 18 [17-10-2025(online)].pdf | 2025-10-17 |
| 8 | 202517100747-FORM 1 [17-10-2025(online)].pdf | 2025-10-17 |
| 9 | 202517100747-DECLARATION OF INVENTORSHIP (FORM 5) [17-10-2025(online)].pdf | 2025-10-17 |
| 10 | 202517100747-COMPLETE SPECIFICATION [17-10-2025(online)].pdf | 2025-10-17 |
| 11 | 202517100747-FORM 3 [13-11-2025(online)].pdf | 2025-11-13 |