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Plasma Processing Device And Substrate Processing System
Abstract: Disclosed is a plasma processing device including a chamber, a substrate support unit, an edge ring, a lift mechanism, a plasma generation unit, and a bias power supply. The substrate support unit is disposed in the chamber. The lift mechanism is configured to vertically move the edge ring with respect to the substrate support unit. The substrate support unit includes: a base electrically coupled to the bias power supply and/or a high-frequency power supply of the plasma generation unit; and an electrostatic chuck on the base. The lift mechanism includes a conductive ring and a connection member. The conductive ring electrically couples to the edge ring while supporting the edge ring mounted thereon. The connection member is configured to maintain electrical connection between the conductive ring and the base in response to movement of the edge ring and the conductive ring by the lift mechanism.
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