FORM 2 THE PATENTS ACT, 1970 (39 OF 1970) & THE PATENT RULES, 2003 COMPLETE SPECIFICATION [SECTION 10 AND RULE 13] "A METHOD OF MANUFACTURING CERAMIC TILE AND THE CERAMIC TILE PREPARED THEREFROM" APPLICANT: H & R JOHNSON (INDIA) LTD. NATIONALITY: COMPANY INCORPORATED UNDER THE ADDRESS: COMPANIES ACT, 1956 RAHEJAS, 3RD FLOOR, CORNER OF MAIN AVENUE AND V. P. ROAD, SANTACRUZ (W) MUMBAI -400054, MAHARASHTRA, INDIA THE FOLLOWING SPECIFICATION DESCRIBES THE NATURE OF THIS INVENTION AND THE MANNER IN WHICH IT IS TO BE PERFORMED: - The present invention relates to a method of manufacturing a ceramic tile and the ceramic tile prepared therefrom. The ceramic tile has an antistatic conductive and an antistatic dissipative glaze. BACKGROUND OF THE INVENTION Control of static charge has been recognized as a problem and routinely addressed for years in a variety of industries, for example electronic and chemical industry. Static charges are primarily generated when people walk across the floor. It is a well-known fact that someone walking across a carpeted floor can accumulate more than 30,000 volts of static charge. According to literature, as low as 25 to 100 volts can cause immediate and catastrophic damage to a sensitive electronic chip. Furthermore, development of static charge on the surfaces of various objects poses great fire hazard in industries like fine chemicals and explosives. This demonstrates the need for protecting the areas from fire hazard and also the environments where sophisticated electronic equipments are manufactured and stored. An antistatic or low static charge floor is an effective solution and therefore an essential requirement for the said industries. The existing specifications for electrical properties of antistatic flooring materials are as below: Material Type Definition or Specification Test method(s) Static =1 x 106ohm antimony oxide are fired at 1280 °C to prepare an electrically conductive powder. The said conducting powder is milled to 1.0 micron. Glazed raw materials are milled with the milled conducting powder which is 30% of the wt. of the glaze raw materials to obtain a glaze slip. Depression of 1.5 mm is kept at the four corners of the tile. The glaze slip is applied by means of a Bell on a 'green' 'engobed' floor tile. The tile is pressed and subsequently sintered at 1000 °C. The resistance of the tile was found to be 3.5 gega-ohm. Example 6: 90% Tin oxide and 10% antimony oxide are fired at 1010 °C to prepare an electrically conductive powder. The said conducting powder is milled to 1.0 micron. Glazed raw materials are milled with the milled conducting powder which is 30% of the weight of the glaze raw materials to obtain a glaze slip. Depression of 1.5 mm is kept at the four corners of the tile. The glaze slip is applied by means of a Bell on a 'green' 'engobed' floor tile. The tile is pressed and subsequently sintered above 1000 °C. The resistance of the tile was found to be 850 mega-ohm. Example 7 90% Tin oxide and 10% antimony oxide are fired at 1100 °C to prepare an electrically conductive powder. The said conducting powder is milled to 10.0 13 micron. Glaze raw materials are milled with the milled conducting powder which is 50% of the wt of the glaze raw materials to obtain a glaze slip. Depression of 1.5 mm is kept at the four corners of the tile. The glaze slip is applied by means of a Bell on a 'green" engobed' floor tile. The tile is pressed and subsequently sintered above 1000 °C. The resistance of the tile was found to be 100 mega-ohm. Example 8 90% Tin oxide and 10% antimony oxide are fired at 1100 °C to prepare an electrically conductive powder. The said conducting powder is milled to 2.0 micron. Glazed raw materials are milled with the milled conducting powder which is 30% of the weight of the glaze raw materials to obtain a glaze slip. Depression of 1.5 mm is kept at the four corners of the tile. The glaze slip is applied by means of a Bell on a 'green' 'engobed' floor tile. The tile is pressed and subsequently sintered above 1000 °C. The resistance of the tile was found to be 30 mega-ohm. Example: 9 90% Tin oxide and 10% antimony oxide are fired at 1100 °C to prepare an electrically conductive powder. The said conducting powder is milled to 0.4 micron. Glazed raw materials are milled with the milled conducting powder which is 20% of the weight of the glaze raw materials to obtain a glaze slip. Depression of 1.5 mm is kept at the four corners of the tile. The glaze slip is applied by means of a Bell on a 'green' 'engobed' floor tile. The tile is pressed and subsequently sintered above 1000 °C. The resistance of the tile was found to be 500 k-ohm. 14 Characteristics: A. Particle Size Distribution: Particle size of conductive / dissipative phase is controlled around 1 micron in average. Particle size of Glaze is maintained around 7microns in average. B. Electrical Properties: i. Antistatic conductive Tiles: Surface electrical resistance of 1 kilo-ohm to 1 mega-ohm. ii. Antistatic Dissipative tiles: Surface Resistance of 1 mega-ohm to 1 gega-ohm. iii. Static Charge Dissipation: Dissipation time for 5000 V to 500 V <2secs ( Standard MIL-B-81705C para 4.8.3 & FED-STD 101C Method 4046) This product is superior to existing products like vinyl tile, conductive rubber based floor tiles and carbon impregnated composite tiles in terms of flexural strength, abrasion resistance, and chemical resistance. 15 We Claim: 1. A method of manufacturing ceramic tile comprising the steps of; i) preparing electrically conducting powder by firing oxides of antimony and tin at a temperature of 1000 °C to 1300 °C; ii) milling said conducting powder to 0.3 micron to 10 micron; iii) milling of glazed raw materials with the milled conducting powder to obtain a glaze slip; iv) creating depressions at atleast one of the corners of said ceramic tile during fabrication of said tile; v) applying said glaze slip over said ceramic tile; vi) firing said resultant ceramic tile at temperature of 1000 °C to 1300 °C by applying a pressure of 350 kg/cm2 . 2. A method as claimed in Claim 1, wherein said electrically conducting powder is prepared by using 80 - 90 % tin oxide and 10 - 20% antimony. 3. A method as claimed in Claim 2, wherein 90 % tin oxide and 10 % antimony is used. 4. A method as claimed in Claim 1, wherein firing of resultant ceramic structure is done at temperatures of 1100 °C to 1250 °C. 5. A method as claimed in Claim 1, wherein said glazed raw materials are selected from frits, quartz, alumina, zircosil or feldspar. 6. A method as claimed in Claim 1, wherein said glaze slip has a specific gravity of 1.9 g/cc to 2.05 g/cc. 7. A method of manufacturing ceramic tile described substantially with reference to the examples accompanying the specification. 16 8. A tile prepared by employing the method as claimed in any of the aforesaid claims. 9. A tile as claimed in Claim 8 having surface resistance ranging from 1 kilo -ohm to 1 gega-ohm. 10. A tile as claimed in Claim 8, wherein said electrically conducting powder constitute 20 to 70 % of the total weight of the glaze slip 11. A tile described substantially with reference to the examples accompanying the specification. Dated this 24th day of April 2006. Himanshu Wasudeo Kane Applicant's Patent Agent To: The Controller of Patents Mumbai 400 037. 17 H & R JOHNSON (INDIA) LTD. PATENT APPLICATION NO. COMPLETE SPEC. NO. OF SHEET: 1 SHEET NO. l CONDUCTING PHASE OXIDES BATCHING MIXING CALCINATION GLAZE RAW MATERIALS BATCHING MICRO MILLING DRYING DIPPING on tiles with embossed corners WET ATTRITION MILLING FIRING IN RHK RECTIFICATION ELECTRICAL PROPERTIES TESTING LAYING ON SITE WITH 5 MM GAP DISPATCH SELECTION & PACKING TRIMMING OF THE TOP RESIN SURFCAE AFTER APPLICATION FILLING THE GAP WITH CONDUCTIVE RESIN UP TO EMBOSSED CORNERS ABSTRACT The present invention relates to a method of manufacturing ceramic tile comprising the steps of i) preparing electrically conducting powder by firing oxides of antimony and tin at a temperature of 1000 °C to 1300 °C; ii) milling said conducting powder to 0.3 micron to 10 micron; iii) milling of glaze raw materials with the milled conducting powder to obtain a glaze slip; iv) creating depressions at atleast one of the corners of said ceramic tile during fabrication of said tile; v) applying said glaze slip over said ceramic tile; vi) firing said resultant ceramic tile at temperature of 1000 °C to 1300 °C. 19