Claims:1. A method for Voltage Variable Attenuator to control non-uniformity in attenuation, the method comprising steps of
Cutting out a plurality of specific size pockets in the soft substrate;
attaching the soft substrate to a metallic hard conductive base plate;
stacking firstly each packet with a first solder preform;
stacking each packet with a metallic highly conductive standoff above the first solder preform;
stacking each packet with a second solder preform above metallic highly conductive standoff;
stacking each packet with a die above the second solder preform;
placing the whole stacked up substrate with the metallic hard conductive base plate attached to it and main conductive strip on hot plate for few minutes for melting the solder preforms to solder the metallic highly conductive standoff, the die and the metallic hard conductive base plate;
connecting to the main conductor strip a round shaped air core highly conductive coaxial conductor that passes control signal but resists RF, to supply the controlling signal from driver circuit to the main conductive strip; and
connecting a pair of half parabolic highly conductive thin golden threads as an interconnecting medium between each die and a main conductive strip.

2. The method as claimed in claim 1 wherein the assembly produce uniform ground paths at various frequencies.;

3. The method as claimed in claim 1 wherein thick highly conductive metallic standoff is kept inside the pocket for die attachment to maintain the height of die with conductive strips.

4. The method as claimed in claim 1 wherein the height of die is adjusted to maintain low inductance of the interconnecting path which improves insertion loss of the device in the RF frequency band.

5. The method as claimed in claim 1 wherein control signal feeding arrangement allows significant RF isolations between RF and control circuitry.

6. The method as claimed in claim 1 wherein metallic standoff provides best grounding for dies as it’s a solid metal directly attached to the hard conductive base plate.

7. The method as claimed in claim 1 wherein no micro voids are produced in the assembly process thus improving uniformity of ground impedance beneath the die.

8. The method as claimed in claim 1 wherein the metallic highly conductive standoff stacked in a packet is of suitable height and dimensions to that of the pocket size and is diced in the packet with very tight tolerance.

9. The method as claimed in claim 1 is man-hours efficient method for mass production wherein, no-requirement of controlled temperature profile, for curing of metallic standoff based system, offers less workmanship errors and less time requirements for assembly process.

10. The method as claimed in claim 1 improves grounding between hard base plate and standoff and it holds base plate with better force which keeps whole setup intact in the vibrational environment by directly soldering the metallic standoff with base plate.

11. The method as claimed in claim 1 wherein rework of defective module assembled by metallic standoff process is easier, less time taking moreover dies and substrate doesn’t get damaged while rework in metallic standoff assembly process thereby allows reuse of substrate.

12. A system for Voltage Variable Attenuator to control non-uniformity in attenuation, the system comprises:
a soft substrate having a plurality of specific size packets cut into it;
a metallic hard conductive base plate attached to the soft substrate;
a plurality of solder preforms, the plurality of solder preforms forming a plurality of first solder preforms and a plurality of second solder preforms;
a plurality of dies, the dies constituting dies based PIN diodes;
a plurality of pairs of half parabolic highly conductive thin golden threads as an interconnecting medium between each die and a main conductive strip;
a round shaped air core highly conductive coaxial conductor that passes control signal but resists RF, to supply the controlling signal from driver circuit to the main conductive strip,
wherein, the plurality of packets are stacked by placing firstly a first solder preform in to the pocket, stacking metallic highly conductive standoff above the first solder preform, stacking a second solder preform above metallic highly conductive standoff, stacking a die above the second solder preform and a pair of half parabolic highly conductive thin golden threads connected as an interconnecting medium between each die and a main conductive strip.

13. The system as claimed in claim 12 wherein the system produces uniform ground paths at various frequencies.

14. The system as claimed in claim 12 wherein thick highly conductive metallic standoff is kept inside the pocket for die attachment to maintain the height of die with conductive strips.

15. The system as claimed in claim 12 wherein the height of die is adjusted to maintain low inductance of the interconnecting path which improves insertion loss of the device in the RF frequency band.

16. The system as claimed in claim 12 wherein control voltage feeding arrangement allows significant RF isolations between RF and control circuitry.

17. The system as claimed in claim 12 wherein metallic standoff provides best grounding for dies as it’s a solid metal directly attached to the hard conductive base plate.

18. The system as claimed in claim 12 wherein no micro voids are produced in the system thus improving uniformity of ground impedance beneath the die.

19. The system as claimed in claim 12 wherein no lengthy profile temperature treatment is required for curing.

20. The system as claimed in claim 12 wherein the metallic highly conductive standoff stacked in a packet is of suitable height and dimensions to that of the pocket size and is diced in the packet with very tight tolerance.
, Description:FORM 2
THE PATENTS ACT, 1970
(39 of 1970)

&

THE PATENTS RULES, 2003

COMPLETE SPECIFICATION
(SEE SECTION 10, RULE 13)

A system and Method for Voltage Variable Attenuator

By
Bharat Electronics Limited,
Corporate Office, Outer Ring Road, Nagavara, Bangalore – 560045, Karnataka, India

THE FOLLOWING SPECIFICATION PARTICULARLY DESCRIBES THE
INVENTION AND THE MANNER IN WHICH IT IS TO BE PERFORMED.

FIELD OF INVENTION
The present invention relates to the general area of electrical component assembly process, more particularly, the invention relates to an attachment process improvement of diode based RF circuitry which helps to provide better control over the RF performance of the device over wide temperature range and frequency range.

BACKGROUND OF THE INVENTION
Generally, RF Systems are an integral part of life for a large portion of the world.
Almost all communication devices have RF components (attenuators, transmitters, receivers, mixers, amplifiers, modulators, demodulators, VCO’s, PLL’s, etc.) and some require specific power levels to run correctly. These power levels differ from one component to the next in a system, thus the need for amplifiers and attenuators. The attenuators are useful for circuits requiring continuously changing attenuation levels and are the ideal RF component for these types of RF systems.

One of the existing arts, US 6919774 describes Diode network configurations in which cathode bias voltage is held substantially constant to provide an attenuator circuit. Preferred embodiments include PIN diodes arranged in a pi network having two attenuation control signals provided thereto. This circuit is used for low frequency applications thereby DC ground connections are done through inductors.

One another of the existing art, US3663900 describes about two PIN diode based voltage controlled attenuator circuit. In this disclosure PIN diodes are directly current controlled by emitter follower. Cathode of the shunt diode is indirectly grounded via transistor.

One of the existing arts, US 4590417 describes about a diode attenuator for high frequencies to an improvement of voltage controlled attenuator without inductor for feeding DC. An input and variable controlled voltage are applied to a junction between first and adjoining sides of the pair of diodes.

One of the existing arts, US 3846724 relates about an adjustable attenuator with p-i-n diodes. This attenuator is for television receiver application. It behaves as interconnect module between antenna and receiver.

One of the existing arts, US 5565823 describes a fully integrator RF attenuator performs gain control upon a received RF signal without the use of an off-silicon PIN diode. The attenuator includes a T-configuration pad in conjunction with a Current Source. A direct Current Signal biases a shunt element in the T-pad. Preferably, a voltage control signal which controls the direct current is generated as a negative feedback signal in proportion to the magnitude of the RF detected at the attenuator output.

One of the existing arts, US 725664 describes design of a voltage controlled attenuator that comprises at least first and second thermistors, arranged into a classical Tee, Pi, or Bridged Tee attenuator design, a heating element, a temperature sensor, and a control circuit. The thermistors have different temperature coefficients of resistance and are in close proximity to the heating element and the temperature sensor.

The RF response of Voltage Variable Attenuator (VVA) made of conductive glue assembly process resulting in non-uniform attenuation over the frequency, over the temperature and unit to unit too. There are few reasons to happen so. One of the major reasons is the improper mixing of Part-A and Part-B glue. It has been observed that single conductive glue needs more temperature and four times more curing time compared to binary conductive glue. Thereby binary conductive glue assembly process is faster compared to single conductive glue assembly process.

Moreover, if the curing has some issues then it creates trouble for extensive vibration environment thereby binary conductive glue is very reliable for die attachment. Main disadvantage of binary glue is it has to be taken in an exact ratio for mixing. Mixing of these glues are time dependent, workmanship error prone and also depends on individual’s skill set. Improper mixing results uneven rigidity of glue after curing and non-uniform affinity strengths with base material.

Another reason of it is formation of tiny air bubbles while filling pockets which in turns create significant voids beneath the PIN diode die after curing. The same is evident through by X-Ray reports. Tiny pockets have been formed to get ground for dies inside the substrate to form immediate ground and to reduce ground inductance. Levelling dies with substrate height is very important to reduce parasitic inductance of the connecting medium between strips and die. This tiny voids beneath the die and inside the glue results improper ground impedance at microwave/ millimeter wave applications. Tiny air bubbles formed while filling sometimes tilts the die due to significant shrinkage over curing. Tilting of die ended up with unequal interconnecting medium lengths. This leads to uneven parasitic at both side of dies. Thereby, different diode assembly produces an exclusive RF ground impedance for different frequencies. This issue affects directly on the RF performance of VVA. This unequal interconnection length affects flatness of RF response over frequency band. Basic problem faced by binary conductive glue assembly process was inconsistency of RF performances over applied controlled voltages applied for achieving specific attenuation level. When no voltage is applied all modules are behaving in the same manner i.e., all modules are showing same insertion losses. Thereby there is no issue of these modules in open voltage conditions. When control voltage is applied modules started behaving as per its assembly quality. As RF ground impedance differs from module to module at various frequency spots (within the specified band) with different control voltage level attenuation level also starts varying accordingly.

For the reasons stated above, which will become apparent to those skilled in the art upon reading and understanding the specification, there is a need in the art for a system and method thereof for quicker assembly process and better response with high yield rate of die attachment process in the mass production situation of open loop multi-step Voltage Variable Attenuator (VVA) that rules out all the void and tilting issues of the conductive process thereby solves all the issues and improves RF performances.

OBJECTIVES OF THE INVENTION
The main objective of the present invention is to solve one or more of the aforesaid issues and provide an attachment process improvement of diode based RF circuitry which helps to provide better control over the RF performance of the device over wide temperature range and frequency range. Further, the present invention provides VVA circuit for generating multiple controlled attenuation levels with multiple open loop controlled signal system at high frequency and over wide temperature range

SUMMARY OF THE INVENTION
The present invention relates to the general area of electrical component assembly process, more particularly, the invention relates to an attachment process improvement of diode based RF circuitry which helps to provide better control over the RF performance of the device over wide temperature range and frequency range. The system of the present invention consists of a soft substrate having a plurality of specific size packets cut into it, a metallic hard conductive base plate attached to the soft substrate, a plurality of solder preforms, the plurality of solder preforms forming a plurality of first solder preforms and a plurality of second solder preforms, a plurality of dies, the dies constituting dies based PIN diodes, a plurality of pairs of half parabolic highly conductive thin golden threads as an interconnecting medium between each die and a main conductive strip, a round shaped air core highly conductive coaxial conductor that passes control signal but resists RF, to supply the controlling signal from driver circuit to the main conductive strip. According to the method of the present invention the plurality of packets in the soft substrate is stacked by placing firstly a first solder preform in to the pocket, stacking metallic highly conductive standoff above the first solder preform, stacking a second solder preform above metallic highly conductive standoff, stacking a die above the second solder preform and a pair of half parabolic highly conductive thin golden threads connected as an interconnecting medium between each die and a main conductive strip.

BRIEF DESCRIPTION OF ACCOMPANYING DRAWINGS
Reference will be made to embodiments of the invention, examples of which may be illustrated in the accompanying figures. These figures are intended to be illustrative, not limiting. Although the invention is generally described in the context of these embodiments, it should be understood that it is not intended to limit the scope of the invention to these particular embodiments.

The above and other objects, features, and advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
Figure 1 describes a block diagram of Voltage Variable Attenuator (VVA) with driver circuits.
Figure 2 narrates about schematic diagram of Voltage Variable Attenuator
Figure 3 depicts assembled PIN diodes with conductive glue on base substrate (prior art).
Figure 4 depicts assembled PIN diodes with metallic stand off on base substrate
Figure 5 depicts assembled PIN diodes with metallic standoff on base substrate 3D view
Figure 6 is a schematic diagram of Driver circuit of VVA
Figure 7 is a schematic diagram of VVA with Driver circuit.
Figure 8 depicts VVA response at room temperature with binary conductive glue attachment based process at 9.0 GHz frequency spot (prior art).
Figure 9 describes about VVA response at room temperature with binary conductive glue attachment based process at 9.3 GHz frequency spot (prior art).
Figure 10 narrates about VVA response at room temperature with binary conductive glue attachment based process at 9.6 GHz frequency spot (prior art).
Figure 11 shows X-Ray report of VVA with binary conductive glue attachment based process (prior art).
Figure 12 depicts VVA response at room temperature with metallic standoff attachment process at 9.0 GHz spot.
Figure 13 depicts VVA response at room temperature with metallic standoff attachment process at 9.3 GHz spot.
Figure 14 depicts VVA response at room temperature with metallic standoff attachment process at 9.6 GHz spot.
Figure 15 depicts VVA response over temperature range from -30° C to +70° C at 9.0 GHz frequency spot.
Figure 16 depicts VVA response over temperature range from -30° C to +70° C at 9.3 GHz frequency spot.
Figure 17 depicts VVA response over temperature range from -30° C to +70° C at 9.6 GHz frequency spot.
Figure 18 depicts Flow diagram of the process of the present invention.

DETAILED DESCRIPTION OF INVENTION
The embodiments herein provide a system and method thereof of an attachment process improvement of diode based RF circuitry which helps to provide better control over the RF performance of the device over wide temperature range and frequency range.
Further the embodiments may be easily implemented in various Voltage Variable Attenuator systems. Embodiments may also be implemented as one or more applications performed by stand alone or embedded systems.

The systems and methods described herein are explained using examples with specific details for better understanding. However, the disclosed embodiments can be worked on by a person skilled in the art without the use of these specific details.
Throughout this application, with respect to all reasonable derivatives of such terms, and unless otherwise specified (and/or unless the particular context clearly dictates otherwise), each usage of:
“a” or “an” is meant to read as “at least one.”
“the” is meant to be read as “the at least one.”

References in the specification to “one embodiment” or “an embodiment” means that a particular feature, structure, characteristic, or function described in connection with the embodiment is included in at least one embodiment. The appearances of the phrase “in one embodiment” in various places in the specification are not necessarily all referring to the same embodiment.

Hereinafter, embodiments will be described in detail. For clarity of the description, known constructions and functions will be omitted. Parts of the description may be presented in terms of operations performed by an Electrical/Electronic system, using terms such as state, link, ground, fault, and the like, consistent with the manner commonly employed by those skilled in the art to convey the substance of their work to others skilled in the art.

In an embodiment, the present invention relates to the assembly process improvement of VVA made of die based PIN diode circuitry. The electrical component assembly process provides better control over the RF performance of the device over wide temperature range for example (-30°C to +70°C) and frequency range

A system for Voltage Variable Attenuator to control non-uniformity in attenuation, comprise of a soft substrate having a plurality of specific size packets cut into it, a metallic hard conductive base plate attached to the soft substrate, a plurality of solder preforms, the plurality of solder preforms forming a plurality of first solder preforms and a plurality of second solder preforms, a plurality of dies, the dies constituting dies based PIN diodes, a plurality of pairs of half parabolic highly conductive thin golden threads as an interconnecting medium between each die and a main conductive strip, a round shaped air core highly conductive coaxial conductor that passes control signal but resists RF, to supply the controlling signal from driver circuit to the main conductive strip. The plurality of packets of the soft substrate are stacked by placing firstly a first solder preform in to the pocket, stacking metallic highly conductive standoff above the first solder preform, stacking a second solder preform above metallic highly conductive standoff, stacking a die above the second solder preform and a pair of half parabolic highly conductive thin golden threads connected as an interconnecting medium between each die and a main conductive strip.

According to an embodiment of the present invention the system produces uniform ground paths at various frequencies. The thick highly conductive metallic standoff is kept inside the pocket for die attachment to maintain the height of die with conductive strips. The height of die is adjusted to maintain low inductance of the interconnecting path which improves insertion loss of the device in the RF frequency band. The metallic standoff provides best grounding for dies as it’s a solid metal directly attached to the hard conductive base plate. The control signal feeding arrangement allows significant RF isolations between RF and control circuitry.

According to an embodiment the system no micro voids are produced in the system of the present invention, and thus improve the uniformity of ground impedance beneath the die.
According to an embodiment the system of the present invention lengthy profile temperature treatment is not required for curing.

In an embodiment of the present invention a highly conductive metallic stub/standoff of suitable height and dimensions with that of the packet size is diced in the same pocket with very tight tolerance (in micron level). It ensures continuous RF ground continuity between substrate and metallic standoff. Highly conductive metallic standoff rules out all the void and tilting issues of the conductive process thereby solves all the issues and improves RF performances.

In an embodiment of the present invention a method for Voltage Variable Attenuator to control non-uniformity in attenuation, comprise steps of cutting out a plurality of specific size pockets in the soft substrate, attaching the soft substrate to a metallic hard conductive base plate, stacking firstly each packet with a first solder preform, stacking each packet with a metallic highly conductive standoff above the first solder preform, stacking each packet with a second solder preform above metallic highly conductive standoff, stacking each packet with a die above the second solder preform, placing the whole stacked up substrate with the metallic hard conductive base plate attached to it and main conductive strip on hot plate for few minutes for melting the solder preforms to solder the metallic highly conductive standoff, the die, the metallic hard conductive base plate and connect the main conductive strip, and connecting to the main conductor strip a round shaped air core highly conductive coaxial conductor that passes control signal but resists RF, to supply the controlling voltage from driver circuit to the main conductive strip, connecting a pair of half parabolic highly conductive thin golden threads as an interconnecting medium between each die and a main conductive strip.

In one another embodiment of the present invention the method for Voltage Variable Attenuator to control non-uniformity in attenuation produce uniform ground paths at various frequencies.

In one another embodiment of the present invention the method for Voltage Variable Attenuator to control non-uniformity in attenuation, maintain the height of die with conductive strips for die attachment, by keeping inside the pocket, the thick highly conductive metallic standoff. The height of die is adjusted to maintain low inductance of the interconnecting path which improves insertion loss of the device in the RF frequency band. The metallic standoff provides best grounding for dies as it’s a solid metal directly attached to the hard conductive base plate. The significant RF isolations between RF and control circuitry is allowed by control signal feeding arrangement.

According to one of the embodiments of the present invention the method for Voltage Variable Attenuator to control non-uniformity in attenuation, do not produce micro voids and thus improves uniformity of ground impedance beneath the die.
According to one of the embodiments of the present invention the method for Voltage Variable Attenuator to control non-uniformity in attenuation, do not require lengthy profile temperature treatment for curing.

Development of PIN diode based VVA in multiple numbers is difficult due to its rigorous specifications without controlling the assembly process. This specification is given by customer for its specific applications. Thereby any deviation from the specification is ruled out. Table 1 shows the specifications which demand tight tolerances with its specified central attenuation values for over all test conditions in the mass production scenario. Tolerance band is ±4 dB for all test points (16 frequency spots) conditions having total 8 dB spread. Frequency of operation is from 9.0 GHz to 9.6 GHz. 600 MHz band is further divided into 16 frequency spots. This specifications has to be met for all 16 frequency spots. From the specification it’s clear that current which is passing through the diode has to be controlled. Current controlling becomes difficult when applied voltage increases. Reason behind it is voltage across diode goes beyond the cut-in voltage. Current increases exponentially at that time thereby attenuation changes drastically. Thereby control resistor optimization is done carefully by considering lower and upper limit of specification respectively. Block diagram explains the total process involved in details.
I. Table 1

Attenuation Spread (dB)
Control Voltage (in volt) Attenuation in dB Attenuation Lower limit (dB) Attenuation Upper limit (dB)
0 0 0 0
0.6 6 2 8
1.0 12 8 16
1.5 15 11 19
1.8 18 14 22
2.1 21 17 25
2.6 24 20 28

A steady assembly process based on technique of using thin hard metallic base material to position the die has been established by way of present invention.

The technique of using thin hard metallic base material provides good mechanical support to the substrate and very good RF ground at microwave frequency. Highly conductive metallic standoff restricts tilting of dies thus reduces possibilities of uneven bond lengths. The assembly steps for construction of Voltage Variable Attenuator to control non-uniformity in attenuation are:
i. Place a first solder preform in to the pocket formed to place die.
ii. Put the diced metallic standoff onto the solder preform
iii. Again, Place a second solder preform on to the metallic standoff
iv. At last place the die on the second solder preform.
v. Keep the whole stacked up soft substrate on the hot plate for few minutes for soldering.
vi. After soldering do the interconnections with conductive strips to die.

The flow diagram of the method /process of the present invention is depicted in Figure 18. This process requires less activities compared to conductive glue assembly process.

The conductive glue assembly process involves following steps:
i. Take Part-A and Part-B glue
ii. Measure its weight in a weighing machine to maintain exact ratio for mixing.
iii. Mix these two conductive epoxies slowly for a specified time.
iv. Keep it for some time for proper amalgamation of binary conductive epoxies.
v. Apply binary epoxies very carefully into the pocket where die will be attached.
vi. Keep the die onto the glue with right orientation.
vii. Check glue is shorting the conductive strips at both the sides under microscope.
viii. Check any tilting happened while keeping die on to the conductive glue if it is fine then it’s ready for curing if not then take out the die and apply conductive glue one more time and then place the die and follow the same inspection process again.
ix. Keep the whole setup inside the oven for 45 minutes (for binary conductive glue) or 3 hours (for single conductive glue) for curing.
x. Check any tilting happened while curing or not.
xi. Pass it under X-Ray scanner and analyse the report of percentages of void. If voids are less then it’s ready for next process of interconnection step.

Comparing above two methods, it is evident that in the first process less assembly steps are involved. Thereby time taken by the metallic standoff process is less.

In one aspect, the present invention describes the assembly process improvement of VVA made of die based PIN diode circuitry. It comprises of die based PIN diodes, transmissions lines and metallic base to hold diodes in vertical positions.

According to the fig. 2 the PIN diodes 203, 205 and 207 are connected to the interconnecting junctions of 202 and 204, 204 and 206, 206 and 208 respectively of the main conductive strip. 201 and 209 are the medium of connectivity to the external world.

The figure 3 explains how 203, 205 and 207 are connected to the adjacent conductive trails. 203 is connected to conductive trails by 310 and 311 a highly conductive high impedance conductive threads, 205, 207 are connected in the same way to conductive trails 321, 322 and 322, 323 respectively. In another aspect, 330 is attached with metallic base 360 with a high temperature environment. 350, 351 and 352 are the specific size pockets are cut in the soft substrate. Pair of conductive threads 310 & 311, 312&313 and 314&315 ensures conductivity. According to prior art single or binary conductive glue 340, 341 and 342 are mixed and filled ¾ of the pockets and 203, 205 and 207 are placed. Mixing and filling of 341, 342 or 343 is a complex process, it requires skill set and experience. Improper mixing and filling create improper RF ground paths at microwave and mm-wave frequencies after profiled thermal treatment. X-ray analysis of 300 ensures lots of micro voids after thermal process inside of 341, 432 and 343 due to improper single or binary glue mixing and filling. Measured response 700 reveals deviations from specifications in room temperature itself for 8 modules. Deviations pattern of each module of 700 is random and unable to find a particular issue. In 700, T1 and T2 are the specification limits over -30°C and 70°C respectively. U2, U5 and U8 are having deviations at lower voltages levels whereas U1, U3 and U4 have issues at higher voltage levels. U6 and U7 are almost out of specifications.

According to the present invention, above issue have been solved by replacing single or binary conductive glue by 8 mil thick metallic highly conductive standoff. In 400 all binary conductive glue 340, 341 and 342 shown in 300 have been replaced by 450, 460 and 470 respectively. Placement and attachment of die is easy and less time consuming. The biggest advantage of this process it doesn’t take long controlled temperature for long time.

In another aspect the figure 5 shows 3D view of placement of the metallic standoff and die. 510, 511 and 512, 513 pairs of thin highly conductive golden threads are connecting die to the conductive strips.

The VVA response at room temperature with metallic standoff attachment process at 9.0 GHz spot is captured in Figure 12. The VVA response at room temperature with metallic standoff attachment process at 9.3 GHz spot is captured in Figure 13. The VVA response at room temperature with metallic standoff attachment process at 9.6 GHz spot is captured in Figure 14.

The VVA response over temperature range from -30° C to +70° C at 9.0 GHz frequency spot is depicted in Figure 15. The VVA response over temperature range from -30° C to +70° C at 9.3 GHz frequency spot is depicted in Figure 16. The VVA response over temperature range from -30° C to +70° C at 9.6 GHz frequency spot is depicted in Figure 17.

According to the present invention metallic standoff based system and method thereof to produce uniform ground paths at various frequencies is easy and convenient over
According to the present invention the system and method thereof is less workmanship error prone over other existing methods.

According to the present invention the system and method thereof doesn’t produce micro voids beneath the die as attached directly with metallic standoff.

According to the present invention the system and method thereof doesn’t require long controlled temperature profile for curing

According to the present invention the system and method thereof is quick thereby man-hours efficiency is possible in the mass production scenario.

According to the present invention in the system and method thereof dies can be taken out and it can be reused for next assembly and thus the system and method thereof is cost effective as costly dies can be reused.
According to the present invention in the system and method thereof pocket shape remains intact thereby rework with the same substrate is possible.