Description:BACKGROUND
Field of Invention
[001] Embodiments of the present invention generally relate to a power amplifier and particularly to a broadband Radio Frequency (RF) power amplifier and a method for fabrication of the same.
Description of Related Art
[002] In field of radio frequency (RF) electronics, a quest for achieving both robustness and accuracy in power amplification has long been a focal point. The advent of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) has significantly advanced the capabilities of RF power amplifiers due to their superior material properties, enabling high-power and high-frequency operation.
[003] However, despite the promise of GaN HEMTs, achieving optimal RF performance while maintaining power efficiency has remained a challenge. Traditional single-channel HEMT-based amplifiers often struggle to strike a balance between RF performance and power output. This struggle stems from the inherent limitations of single-channel architectures, that compromise either RF efficiency or power handling capabilities.
[004] Moreover, it is very difficult to achieve high RF and power performance simultaneously in GaN HEMT-based amplifiers, especially in single-channel HEMT-based amplifiers. The inherent limitations of single-channel architectures pose a significant barrier to achieving optimal RF efficiency and power handling capabilities. This challenge underscores the critical need for innovative solutions that can address the shortcomings of traditional amplifier designs and pave the way for enhanced performance in RF electronics.
[005] Therefore, in light of these challenges, the development of a fully robust and accurate physics-based RF AlN/GaN Graded Double-channel HEMT-based broadband power amplifier emerges as a promising solution.
[006] There is thus a need for an improved and advanced method for fabrication of a broadband Radio Frequency (RF) power amplifier that can administer the aforementioned limitations in a more efficient manner.
SUMMARY
[007] Embodiments in accordance with the present invention provide a broadband Radio Frequency (RF) power amplifier. The power amplifier comprising: a High Electron Mobility Transistor (HEMT) fabricated on a substrate, and forms a first channel etched within a first layer of the substrate; a second channel etched within a second layer of the substrate; a barrier layer positioned between the first channel and the second channel, wherein the barrier layer incorporates a transmission gates (T-Gates) within the structure of the High Electron Mobility Transistor (HEMT) to enhance gate control and to provide increased linearity and efficiency in Radio Frequency (RF) amplification; a source region and a drain region formed within the substrate adjacent to the first channel and the second channel, respectively; and a biasing circuitry configured to provide bias voltages and currents to the High Electron Mobility Transistor (HEMT) for optimal operation and performance.
[008] Embodiments in accordance with the present invention further provide a method for fabrication of a broadband Radio Frequency (RF) power amplifier. The method comprising steps of: defining Direct Current (DC) specifications, Radio Frequency (RF) characteristics, a high output current density, and enhanced linearity requirements for the power amplifier; fabricating a double-channel High Electron Mobility Transistor (HEMT) on a substrate selected from Aluminium Nitride (AlN) or Gallium Nitride (GaN); positioning a barrier layer between a first channel and a second channel, wherein the barrier layer incorporates transmission gates (T-Gates) within the structure of the High Electron Mobility Transistor (HEMT) to enhance gate control and provide increased linearity and efficiency in Radio Frequency (RF) amplification; forming a source region adjacent to the first channel and a drain region adjacent to the second channel within the substrate; configuring a biasing circuitry to provide bias voltages and currents to the High Electron Mobility Transistor (HEMT) for optimal operation and performance; testing the fabricated double-channel High Electron Mobility Transistor (HEMT) to obtain benchmark power amplification performance; matching the benchmark power amplification with pre-calculated power amplification requirements; and designing and fabricating the power amplifier utilizing the double-channel High Electron Mobility Transistor (HEMT) when the benchmarked power amplification matches the pre-calculated power amplification, ensuring alignment between design specifications and actual performance characteristics.
[009] Embodiments of the present invention may provide a number of advantages depending on their particular configuration. First, embodiments of the present application may provide a method for fabrication of a broadband Radio Frequency (RF) power amplifier.
[0010] Next, embodiments of the present application may provide a method for fabrication of a broadband Radio Frequency (RF) power amplifier that offers broad frequency range, high power density, low noise, and so forth.
[0011] Next, embodiments of the present application may provide a method for fabrication of a broadband Radio Frequency (RF) power amplifier that provides superior transconductance compared to conventional solutions due to factors such as increased carrier mobility, improved charge control, optimized gate structures, graded channel design, wide energy band gap, improved linearity, operational efficiency, and so forth.
[0012] Next, embodiments of the present application may provide a method for fabrication of a broadband Radio Frequency (RF) power amplifier that provides long-term reliability making them attractive for various high-frequency and power applications.
[0013] These and other advantages will be apparent from the present application of the embodiments described herein.
[0014] The preceding is a simplified summary to provide an understanding of some embodiments of the present invention. This summary is neither an extensive nor exhaustive overview of the present invention and its various embodiments. The summary presents selected concepts of the embodiments of the present invention in a simplified form as an introduction to the more detailed description presented below. As will be appreciated, other embodiments of the present invention are possible utilizing, alone or in combination, one or more of the features set forth above or described in detail below.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The above and still further features and advantages of embodiments of the present invention will become apparent upon consideration of the following detailed description of embodiments thereof, especially when taken in conjunction with the accompanying drawings, and wherein:
[0016] FIG. 1 illustrates a circuit diagram of a broadband Radio Frequency (RF) power amplifier, according to an embodiment of the present invention; and
[0017] FIG. 2 depicts a flowchart of a method for fabrication of the broadband Radio Frequency (RF) power amplifier, according to an embodiment of the present invention.
[0018] The headings used herein are for organizational purposes only and are not meant to be used to limit the scope of the description or the claims. As used throughout this application, the word "may" is used in a permissive sense (i.e., meaning having the potential to), rather than the mandatory sense (i.e., meaning must). Similarly, the words “include”, “including”, and “includes” mean including but not limited to. To facilitate understanding, like reference numerals have been used, where possible, to designate like elements common to the figures. Optional portions of the figures may be illustrated using dashed or dotted lines, unless the context of usage indicates otherwise.
DETAILED DESCRIPTION
[0019] The following description includes the preferred best mode of one embodiment of the present invention. It will be clear from this description of the invention that the invention is not limited to these illustrated embodiments but that the invention also includes a variety of modifications and embodiments thereto. Therefore, the present description should be seen as illustrative and not limiting. While the invention is susceptible to various modifications and alternative constructions, it should be understood, that there is no intention to limit the invention to the specific form disclosed, but, on the contrary, the invention is to cover all modifications, alternative constructions, and equivalents falling within the scope of the invention as defined in the claims.
[0020] In any embodiment described herein, the open-ended terms "comprising", "comprises”, and the like (which are synonymous with "including", "having” and "characterized by") may be replaced by the respective partially closed phrases "consisting essentially of", “consists essentially of", and the like or the respective closed phrases "consisting of", "consists of”, the like.
[0021] As used herein, the singular forms “a”, “an”, and “the” designate both the singular and the plural, unless expressly stated to designate the singular only.
[0022] FIG. 1 illustrates a circuit diagram of a broadband Radio Frequency (RF) power amplifier 100 (hereinafter referred to as the power amplifier 100), according to an embodiment of the present invention. In an embodiment of the present invention, the power amplifier 100 may be adapted to amplify a power supply with low voltage to obtain correspondingly high Radio Frequency (RF) for the supplied low voltage. The power amplifier 100 incorporates transmission gates (T-Gates) for optimal Radio Frequency (RF) generation, in an embodiment of the present invention. According to embodiments of the present invention, the power amplifier 100 may be utilized in industries such as, but not limited to, radar and satellite communications, airborne and space applications, electronic warfare, broadcasting, medical imaging, defense, and missile guiding systems. and so forth. Embodiments of the present invention are intended to include or otherwise cover any utility of the power amplifier 100, including known, related art, and/or later developed technologies.
[0023] According to embodiments of the present invention, the power amplifier 100 may comprise an input source 102, a network matching 104a-104b, a Direct Current (DC) bias (Vgs) 106, a Direct Current (DC) bias (Vds) 108, a substrate 110, a High Electron Mobility Transistor (HEMT) 112, a source region 114, a drain region 116, a load 118, and grounds 120a-120c.
[0024] In an embodiment of the present invention, the input source 102 may be adapted to provide an input current to the power amplifier 100. The input current provided by the input source 102 may be of low voltage. Further, the power amplifier 100 may amplify the low voltage to obtain a correspondingly high Radio Frequency (RF) for the supplied low voltage. In an embodiment of the present invention, the input source 102 may be an Alternating Current (AC) source. In another embodiment of the present invention, the input source 102 may be a Direct Current (AC) source.
[0025] In an embodiment of the present invention, the network matching 104a-104b may be connected between the input source 102 and the load 118. The network matching 104a-104b may be adapted to transfer all input current provided by the input source 102 to the load 118. The network matching 104a-104b may be adapted to present an input impedance that may be equal to a complex conjugate of an output impedance of the input source 102.
[0026] In an embodiment of the present invention, the Direct Current (DC) bias (Vgs) 106 and the Direct Current (DC) bias (Vds) 108 may be adapted to convert traces of the Alternating Current (AC) in the input current provided by the input source 102.
[0027] In an embodiment of the present invention, the substrate 110 may be adapted to be etched for the fabrication of the High Electron Mobility Transistor (HEMT) 112. The High Electron Mobility Transistor (HEMT) 112 may comprise the source region 114 and the drain region 116. In an embodiment of the present invention, components of the High Electron Mobility Transistor (HEMT) 112 may be explained in conjunction with FIG. 2.
[0028] According to embodiments of the present invention, the substrate 110 may be fabricated using semi-conductive materials such as, but not limited to, an Aluminum Nitride (AlN), a Gallium Nitride (GaN), and so forth. Embodiments of the present invention are intended to include or otherwise cover any semi-conductive materials for fabrication of the substrate 110, including known, related art, and/or later developed technologies.
[0029] According to an embodiment of the present invention, the High Electron Mobility Transistor (HEMT) 112 may be fabricated on the substrate 110, in an embodiment of the present invention. According to embodiments of the present invention, the High Electron Mobility Transistor (HEMT) 112 may comprise the source region 114 and the drain region 116. In an embodiment of the present invention, the High Electron Mobility Transistor (HEMT) 112 may be formed with a first channel, a second channel, a barrier layer, and a biasing circuitry (not shown). In an embodiment of the present invention, the first channel may be etched within a first layer of the substrate 110. The second channel may be etched within a second layer of the substrate 110, in an embodiment of the present invention.
[0030] In an embodiment of the present invention, the barrier layer may be positioned between the first channel and the second channel. The barrier layer may incorporate the transmission gates (T-Gates) within the structure of the High Electron Mobility Transistor (HEMT) 112 to enhance gate control and to provide increased linearity and efficiency in Radio Frequency (RF) amplification. The increased linearity may be crucial to prevent signal distortion in communication systems.
[0031] In an embodiment of the present invention, the source region 114 may form at a junction of the barrier layer and the first channel. The drain region 116 may form at the junction of the second channel and the barrier layer.
[0032] In an embodiment of the present invention, the biasing circuitry may be configured to provide bias voltages and currents to the High Electron Mobility Transistor (HEMT) 112 for optimal operation and performance.
[0033] In an embodiment of the present invention, the load 118 may be a device or an equipment connected in a circuit with the power amplifier 100. The load 118 may be fed with an amplified voltage to obtain correspondingly high Radio Frequency (RF), in an embodiment of the present invention. According to embodiments of the present invention, the load 118 may be, but not limited to, a resistor, a conductor, an inductor, a transistor, and so forth. Embodiments of the present invention are intended to include or otherwise cover any type of the load 118, including known, related art, and/or later developed technologies.
[0034] In an embodiment of the present invention, the grounds 120a-120c may be adapted to ground (drain) any leakage of the input current provided by the input source 102.
[0035] FIG. 2 depicts a flowchart of a method 200 for fabrication of the power amplifier 100, according to an embodiment of the present invention.
[0036] At step 202, Direct Current (DC) specifications, Radio Frequency (RF) characteristics, a high output current density, and enhanced linearity requirements for the power amplifier 100 may be defined. According to embodiments of the present invention, the Direct Current (DC) specifications and Radio Frequency (RF) characteristics may be for example, but not limited to, a power output, a frequency range, a linearity, an efficiency, a thermal management, a stability of a circuit, and so forth. In a preferred embodiment of the present invention, the high output current density may ensure substantial power output within low voltage (Vd) conditions. Embodiments of the present invention are intended to include or otherwise cover any Direct Current (DC) specifications and Radio Frequency (RF) characteristics, including known, related art, and/or later developed technologies, that may be defined for the power amplifier 100.
[0037] At step 204, the double-channel High Electron Mobility Transistor (HEMT) 112 may be fabricated on the substrate 110.
[0038] At step 206, the barrier layer may be formed between the first channel and the second channel. The barrier layer may incorporate the transmission gates (T-Gates) within the structure of the High Electron Mobility Transistor (HEMT) 112 to enhance gate control and provide increased linearity and efficiency in the Radio Frequency (RF) amplification.
[0039] At step 208, the source region 114 may be formed adjacent to the first channel 200 and the drain region 116 may be formed adjacent to the second channel within the substrate 110.
[0040] At step 210, the biasing circuitry may be configured to provide bias voltages and currents to the High Electron Mobility Transistor (HEMT) 112 for optimal operation and performance.
[0041] At step 212, the fabricated double-channel High Electron Mobility Transistor (HEMT) 112 may be tested to obtain benchmark power amplification performance.
[0042] At step 214, the benchmark power amplification may be matched with pre-calculated power amplification requirements. Upon matching, if the benchmark power amplification may equal to the pre-calculated power amplification requirements, then the method 200 may proceed to a step 216. Else, the method 200 may revert to the step 202.
[0043] At step 216, the power amplifier 100 may be designed and fabricated utilizing the double-channel High Electron Mobility Transistor (HEMT) 112.
[0044] At step 218, a performance of the fabricated power amplifier 100 may be tested. The performance of the fabricated power amplifier 100 may be tested by applying input signals of varying frequencies and amplitudes to the amplifier. The output signals are then measured to determine parameters such as a gain, the linearity, the efficiency, and a distortion. Additionally, the amplifier 100 may be subjected to a thermal testing to evaluate its performance under different temperature conditions. These tests may ensure that the power amplifier meets the required specifications and performs optimally in real-world applications.
[0045] While the invention has been described in connection with what is presently considered to be the most practical and various embodiments, it is to be understood that the invention is not to be limited to the disclosed embodiments, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the scope of the appended claims.
[0046] This written description uses examples to disclose the invention, including the best mode, and also to enable any person skilled in the art to practice the invention, including making and using any devices or systems and performing any incorporated methods. The patentable scope of the invention is defined in the claims, and may include other examples that occur to those skilled in the art. Such other examples are intended to be within the scope of the claims if they have structural elements that do not differ from the literal language of the claims, or if they include equivalent structural elements within substantial differences from the literal languages of the claims. , Claims:CLAIMS
I/We Claim:
1. A broadband Radio Frequency (RF) power amplifier (100), comprising:
a High Electron Mobility Transistor (HEMT) (112) fabricated on a substrate (110) and forms a barrier layer positioned between the first channel and the second channel, wherein the barrier layer incorporates a transmission gates (T-Gates) within the structure of the High Electron Mobility Transistor (HEMT) (112) to enhance gate control and to provide increased linearity and efficiency in Radio Frequency (RF) amplification;
a source region (114) and a drain region (116) formed within the substrate (110) adjacent to the first channel and the second channel , respectively; and
a biasing circuitry configured to provide bias voltages and currents to the High Electron Mobility Transistor (HEMT) (112) for optimal operation and performance.
2. The power amplifier (100) as claimed in claim 1, wherein the power amplifier (100) is adapted to amplify a power supply with low voltage to obtain correspondingly high Radio Frequency (RF) for the supplied low voltage.
3. The power amplifier (100) as claimed in claim 1, wherein the substrate (110) is fabricated from an Aluminum Nitride (AlN), a Gallium Nitride (GaN), or a combination thereof.
4. The power amplifier (100) as claimed in claim 1, wherein the power amplifier (100) incorporates the transmission gates (T-Gates) for optimal Radio Frequency (RF) generation.
5. A method (200) for fabrication of a broadband Radio Frequency (RF) power amplifier (100), comprising the steps of:
defining Direct Current (DC) specifications, Radio Frequency (RF) characteristics, a high output current density, and enhanced linearity requirements for the power amplifier (100);
fabricating a double-channel High Electron Mobility Transistor (HEMT) (112) on a substrate (110) selected from Aluminium Nitride (AlN) or Gallium Nitride (GaN);
positioning a barrier layer between a first channel and a second channel , wherein the barrier layer incorporates transmission gates (T-Gates) within the structure of the High Electron Mobility Transistor (HEMT) (112) to enhance gate control and provide increased linearity and efficiency in Radio Frequency (RF) amplification;
forming a source region (114) adjacent to the first channel and a drain region (116) adjacent to the second channel within the substrate (110);
configuring a biasing circuitry to provide bias voltages and currents to the High Electron Mobility Transistor (HEMT) (112) for optimal operation and performance;
testing the fabricated double-channel High Electron Mobility Transistor (HEMT) (112) to obtain benchmark power amplification performance;
matching the benchmark power amplification with pre-calculated power amplification requirements; and
designing and fabricating the power amplifier (100) utilizing the double-channel High Electron Mobility Transistor (HEMT) (112) when the benchmarked power amplification matches the pre-calculated power amplification, ensuring alignment between design specifications and actual performance characteristics.
6. The method (200) as claimed in claim 4, comprising a step of testing a performance of the fabricated power amplifier (100).
7. The method (200) as claimed in claim 5, wherein the Direct Current (DC) specifications and Radio Frequency (RF) characteristics are selected from a power output, a frequency range, a linearity, an efficiency, a thermal management, a stability of a circuit, or a combination thereof.
8. The method (200) as claimed in claim 5, wherein the high output current density ensures substantial power output within low voltage (Vd) conditions.
9. The method (200) as claimed in claim 5, wherein the power amplifier (100) is adapted to amplify a power supply with low voltage to obtain correspondingly high Radio Frequency (RF) for the supplied low voltage.
10. The method (200) as claimed in claim 5, wherein the power amplifier (100) incorporates transmission gates (T-Gates) for optimal Radio Frequency (RF) generation.
Date: April 01, 2024
Place: Noida

Dr. Keerti Gupta
Agent for the Applicant
(IN/PA-1529)