The present disclosure generally relates to electronic circuits for wireless communication systems. More specifically, the present disclosure relates to CCMOS based low noise ultra-wide band amplifier, and a method for fabricating thereto.
BACKGROUND
The background description includes information that may be useful in understanding the present invention. It is not an admission that any of the information provided herein is prior art or relevant to the presently claimed invention, or that any publication specifically or implicitly referenced is prior art.
In the communication field, amplifiers are more essential to amplify weak signal without any unwanted signal. The amplification is necessary to drive other circuits for authentic response of electronic communication system. Some desirable parameter of amplifier is potential to provide high performance for communication devices. Wide frequency band with high gain is necessary parameter for circuit researchers or designers due to high data rate in wireless communication system.
Conventional amplifier is narrow band amplifier or narrow band signal received by amplifier than wide band amplifiers. Wide band amplifier has low gain, high noise figure with large frequency band. Therefore, for the circuit designer, wide band amplifier requires a communication between a power gain, frequency band and noise figure.
However, the width of frequency band in amplifier generally defines the magnitude response of an amplifier be like a parabola with negative groove and flattened top between two cut off frequencies f1 and f2. The signals below f1 or above f2 have been decreasing gain as the changes in frequency away from the frequency range f2 to f1. f2 - f1 is also called the frequency bandwidth.
Mostly, Communication systems are designed so that the operating frequency band of amplifier occur simultaneously with the frequency spectrum of the signals. It is necessary to amplify modulating signal. If this circumstance is not match, amplifier frequently corrupt the band spectrum of the input signal by boosting some different portion of modulating signal with various amount. Hence, wide frequency band spectrum allows accurate amplification of modulating signal without any unwanted signal.
Presently, various methods are running to design electronic circuit for amplification of modulating signal for different applications in the case of wireless communication system, transmitter can employ power amplifier, receiver can employ low noise wide band amplifier and both can employ variable gain amplifier (VGA).
To integrate amplifier circuit using VLSI technology, complementary metal oxide semiconductor fabrication processes are mostly utilized in wireless communication system and other applications also. Such process has been capable of providing either width frequency band or reduce flexibility of gain. These both qualities could not be achieved simultaneously.
Therefore, more improvements are required to design amplifier circuit with extended bandwidth, good linearity, reliability and substantially fixed gain.
All publications herein are incorporated by reference to the same extent as if each individual publication or patent application were specifically and individually indicated to be incorporated by reference. Where a definition or use of a term in an incorporated reference is inconsistent or contrary to the definition of that term provided herein, the definition of that term provided herein applies and the definition of that term in the reference does not apply.
In some embodiments, the numbers expressing quantities of ingredients, properties such as concentration, reaction conditions, and so forth, used to describe and claim certain embodiments of the invention are to be understood as being modified in some instances by the term “about.” Accordingly, in some embodiments, the numerical parameters set forth in the written description and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by a particular embodiment. In some embodiments, the numerical parameters should be construed in light of the number of reported significant digits and by applying ordinary rounding techniques. Notwithstanding that the numerical ranges and parameters setting forth the broad scope of some embodiments of the invention are approximations, the numerical values set forth in the specific examples are reported as precisely as practicable. The numerical values presented in some embodiments of the invention may contain certain errors necessarily resulting from the standard deviation found in their respective testing measurements.
As used in the description herein and throughout the claims that follow, the meaning of “a,” “an,” and “the” includes plural reference unless the context clearly dictates otherwise. Also, as used in the description herein, the meaning of “in” includes “in” and “on” unless the context clearly dictates otherwise.
The recitation of ranges of values herein is merely intended to serve as a shorthand method of referring individually to each separate value falling within the range. Unless otherwise indicated herein, each individual value is incorporated into the specification as if it were individually recited herein. All methods described herein can be performed in any suitable order unless otherwise indicated herein or otherwise clearly contradicted by context. The use of any and all examples, or exemplary language (e.g. “such as”) provided with respect to certain embodiments herein is intended merely to better illuminate the invention and does not pose a limitation on the scope of the invention otherwise claimed. No language in the specification should be construed as indicating any non-claimed element essential to the practice of the invention.
Groupings of alternative elements or embodiments of the invention disclosed herein are not to be construed as limitations. Each group member can be referred to and claimed individually or in any combination with other members of the group or other elements found herein. One or more members of a group can be included in, or deleted from, a group for reasons of convenience and/or patentability. When any such inclusion or deletion occurs, the specification is herein deemed to contain the group as modified thus fulfilling the written description of all Markush groups used in the appended claims.
OBJECTS OF THE PRESENT DISCLOSURE
An object of the present disclosure is to overcome one or more drawbacks associated with conventional methods.
An object of the present disclosure is to provide a wireless communication system comprising CCMOS based low noise ultra-wide band amplifier.
An object of the present disclosure is to provide a CCMOS based low noise ultra-wide band amplifier.
An object of the present disclosure is to provide a method for fabricating the CCMOS based low noise ultra-wide band amplifier.
An object of the present disclosure is to provide the CCMOS amplifier with extended bandwidth, good linearity, reliability and substantially fixed gain.
SUMMARY
Various objects, features, aspects and advantages of the inventive subject matter will become more apparent from the following detailed description of preferred embodiments, along with the accompanying drawing figures in which like numerals represent like components.
The present disclosure relates to software defects prediction. More specifically, the present disclosure relates to prediction of software defects using non-linear manifold detection (MD) and machine learning approaches. The present disclosure relates to a computing system and a sampling based non-linear manifold detection method for predicting software defects.
In an aspect, the present invention discloses an ultra-wide band amplifier (100) for wireless communication systems. The amplifier (100) includes a wireless antenna (102); an input matching network (104); a transistor (106) comprising at least two CCMOS inverters connected in cascade form and a biasing circuit; an output matching network (108) having an inductor as an impedance element at frequency such that there is an increase in an output signal produced by the amplifier (100) through an output load; and a load resistor (110).
In another aspect, a method (200) for increasing frequency band of an amplifier circuit (100) providing an output signal to a load is disclosed. The method (200) comprising providing a sourcing circuit of CCMOS transistor with inductive impedance characteristics, followed by compensating for reactive input impedance associated with the load RL.
BRIEF DESCRIPTION OF THE DRAWINGS
Other objects, features, and advantages of the embodiment will be apparent from the following description when read with reference to the accompanying drawings. In the drawings, wherein like reference numerals denote corresponding parts throughout the several views:
Referring to Figure 1, shows a block diagram of an amplifier (100) for wide band applications, in accordance with an illustrative embodiment of a present disclosure;
Referring to Figure 2, shows another schematic diagram illustrating an ultra-wide band amplifier (100), in accordance with the embodiment of the present disclosure; and
Referring to Figure 3, illustrates the various performances of the ultra-wide band amplifier (100), in accordance with the embodiment of the present disclosure.
Table 01 shows frequency response performance values of the ultra-wide band amplifier, in accordance with the illustrative embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The following discussion provides many example embodiments of the inventive subject matter. Although each embodiment represents a single combination of inventive elements, the inventive subject matter is considered to include all possible combinations of the disclosed elements. Thus, if one embodiment comprises elements A, B, and C, and a second embodiment comprises elements B and D, then the inventive subject matter is also considered to include other remaining combinations of A, B, C, or D, even if not explicitly disclosed. The embodiments herein and the various features and advantageous details thereof are explained more fully with reference to the non-limiting embodiments that are illustrated in the accompanying drawings and detailed in the following description. Descriptions of well-known components and processing techniques are omitted so as to not unnecessarily obscure the embodiments herein. The examples used herein are intended merely to facilitate an understanding of ways in which the embodiments herein may be practiced and to further enable those of skill in the art to practice the embodiments herein. Accordingly, the examples should not be construed as limiting the scope of the embodiments herein.
Many modifications will be apparent to those skilled in the art without departing from the scope of the present invention as hereinbefore described with reference to the accompanying drawings.
Throughout this specification and the claims which follow, unless the context requires otherwise, the word “comprise”, and variations such as “comprises” and “comprising”, will be understood to imply the inclusion of a stated integer or step or group of integers or steps but not the exclusion of any other integer or step or group of integers or steps.
As used herein, the singular forms “a”, “an”, “the” include plural referents unless the context clearly dictates otherwise. Further, the terms “like”, “as such”, “for example”, “including” are meant to introduce examples which further clarify more general subject matter, and should be contemplated for the persons skilled in the art to understand the subject matter.

The present disclosure discloses an ultra-wide band amplifier (100) for wireless communications. The amplifier (100) includes an input signal through wireless antenna (102), an input matching network (104), a transistor (106), an output matching network (108), and a load resistor (110). The load resistor (110) represents the output load driven by the amplifier (100). In operation, the output matching network (108) has an inductor used as a high impedance element at high frequency causing an increasing of the output signal produced by amplifier (100) through the output load.
As shown in Figure 1, the frequency bandwidth of the amplifier (100) may be improved or exceed by the transistor (106). The transistor (106) is configured such that the transistor (106) includes at least two CMOS inverters connected in cascaded form and are behaviorally equivalent to a single NPN transistor. Such a configuration provides desirable characteristics including such as but not limited to high current gain, high input impedance, wide bandwidth of the amplifier. The amplifier (100) may also include a biasing circuit, CCMOS transistor as a NPN transistor and an inductive drain terminal. The drain terminal of CCMOS transistor is connected to the inductive coupled circuit and the output matching network (108). The ultra-wide band amplifier (100) can drive the maximum resistive load (110) at the output terminal to produce the high gain wide band frequency signal. The amplifier (100) drives the load resistor (110) at the output terminal to produce the high gain wide band frequency signal.
FIG: 2 shows another schematic of the amplifier (100) fabricated such that the amplifier (100) is capable to provide necessary performance parameters including such as but not limited to high gain, wide bandwidth with low noise and insensitivity to variable temperature.
In the embodiment, the amplifier (100) includes an input supply of 10mv, the input matching network of RLC, the potential divider as a biasing network, a complementary compound MOS transistor, an inductor connected at the drain terminal of transistor, and the output matching network. This proposed amplifier can drive up to 1Kohm output load. The amplifier (100) behaves as an ultra-wide band low noise amplifier due to their characteristics. The present disclosure enables increase and decrease in the gain of the amplifier (100) and reduce noise by the suitable value of resistor and capacitor of the input matching network (104). The value of inductor and resistor in the input matching network (104) is constant. The network provides potential divider biasing to the amplifier (100) to reduce noise and voltage drop across the amplifier (100). The CCMOS transistor as a NPN transistor (106) is an amplifier component with high performance characteristics including such as but not limited to high frequency component, high speed, low noise, low power consumption for new invention in amplifier. The Inductor is resonating gate drain capacitance of the CCMOS transistor to control the bandwidth of amplifier and make suitable for high frequency signal. As shown in Figure 2, the output matching network (108) depends on the value of inductor and capacitor to control the frequency bandwidth of the amplifier (100). The amplifier (100) is able to drive high resistor output load at least Kilo ohm.
Figure 3 shows an illustrating the frequency response performance values of the ultra-wide band amplifier (100) according to the embodiment of the present invention. At the various values of resistor, inductor and capacitor, the value of cut of frequency at 3dB or bandwidth of the amplifier (100) can be measured. The ultra-wide amplifier (100) comprising bandwidth of 64.38GHz.
Advantages of the present invention
In accordance with aforementioned embodiment and related aspects of the present invention in the present disclosure, the system (100) is beneficial to wireless communication systems.
An object of the present disclosure is to provide a wireless communication system comprising CCMOS based low noise ultra-wide band amplifier.
An object of the present disclosure is to provide a CCMOS based low noise ultra-wide band amplifier.
An object of the present disclosure is to provide a method for fabricating the CCMOS based low noise ultra-wide band amplifier.
An object of the present disclosure is to provide the CCMOS amplifier with extended bandwidth, good linearity, reliability and substantially fixed gain.
The foregoing descriptions of exemplary embodiments of the present disclosure have been presented for purposes of illustration and description. They are not intended to be exhaustive or to limit the disclosure to the precise forms disclosed, and obviously many modifications and variations are possible in light of the above teaching. The exemplary embodiments were chosen and described in order to best explain the principles of the disclosure and its practical application, to thereby enable others skilled in the art to best utilize the disclosure and various embodiments with various modifications as are suited to the particular use contemplated. It is understood that various omissions, substitutions of equivalents are contemplated as circumstance may suggest or render expedient but is intended to cover the application or implementation without departing from the spirit or scope of the claims of the present disclosure.

We Claim

1. An ultra-wide band amplifier (100) for wireless communication systems, the amplifier (100) comprising:
a wireless antenna (102);
input matching network (104);
a transistor (106) comprising at least two Complementary compound MOS (CCMOS) inverters connected in cascade form and a biasing circuit;
an output matching network (108) having an inductor as an impedance element at frequency such that there is an increase in an output signal produced by the amplifier (100) through an output load; and
a load resistor (110).
2. The amplifier (100) as claimed in claim 1, wherein the load resistor (110) represents the output load driven by the amplifier (100).
3. The amplifier (100) as claimed in claim 1, wherein the amplifier (100) drives the load resistor (110) at the output terminal to produce the high gain wide band frequency signal.
4. The amplifier (100) as claimed in claim 1, wherein the amplifier (100) has an input supply of at least 10 mv.
5. The amplifier (100) as claimed in claim 1, wherein the value of inductor and resistor in input matching circuit is constant.
6. The amplifier (100) as claimed in claim 1, wherein the output matching network (108) depends on the value of inductor and capacitor to control the frequency bandwidth of the amplifier (100).
7. The amplifier (100) as claimed in claim 1, wherein the amplifier (100) includes a CCMOS transistor with a potential divider biasing at the input, providing a high frequency through the output matching network to substantially cancel reactive effects associated with the output load.
8. A method for increasing frequency band of an amplifier circuit (100) providing an output signal to a load comprising:
providing a sourcing circuit of CCMOS transistor with inductive impedance characteristics, the CCMOS transistor comprising at least two CCMOS inverters connected in cascade form and a biasing circuit; and
compensating for reactive input impedance associated with the load RL.
9. The method as claimed in claim 8, wherein the method comprising configuring the gate of transistor with inductive capacitive impedance.
10. The method as claimed in claim 8, wherein the method comprising providing a high frequency through the output matching network to substantially cancel reactive effects associated with the output load.