TECHNICAL FIELD
[001] The present disclosure relates generally to a solar cell. More particularly, the
present disclosure pertains to a charge plasma perovskite solar cell device.
BACKGROUND
[002] Background description includes information that may be useful in understanding the
present invention. It is not an admission that any of the information provided herein is prior art or relevant to the presently claimed invention, or that any publication specifically or implicitly referenced is prior art.
[003] Solar cells are semiconductor workpieces that include emitter regions, which may be
p-type doped, and surface fields, which may be n-type doped. A conventional solar cell comprises a light-absorbing layer arranged to absorb photons and to convert energy of photons into free charge carriers which are separated such that a potential difference is achieved. Solar cells utilize a p-n junction, created between the emitter regions and the surface fields, to generate electrical current in the presence of photons.
[004] On the basis of earth-abundant, solution-processable, low-cost materials, perovskite
compound exhibits attributes that challenge silicon's predominance in photovoltaics. Efficient
charge separation in perovskite solar cells is typically achieved by carrier selective charge
transport layers (CTLs), which exist as either conventional transport materials or ultrathin work
function modifiers. Purpose of a transport layer between active layer and cathode (or anode) is to
reduce recombination of free charge carriers (electrons and holes) with their counterparts on
defects which exist on interfaces. The charge transport layer is basically of two types - electron
transport layer and hole transport layer. Charge separation in perovskite solar cells basically
takes place due to building up of electric field in the perovskite layer. The said electric field is
mainly a result of contact difference of potential between the electron transport layer and the
hole transport layer. But, fabrication of pinhole and defect-free multi-layer structures is
challenging, especially for moisture-sensitive solution process able materials.
[005] An existing technique, perovskite-based devices, a thin active layer of perovskite is
sandwiched between two charge transport layers (CTLs) such as electron transport layer (ETL)

and hole transport layer (HTL). CTLs helps in extracting photo generated electron-hole (e-h)
pairs, employment of the CTLs afford significantly high conversion efficiencies however results
in performance degradation and fabrication challenges.
[006] In another existing technique, appropriate functioning of a solar cell, collection of
generated charge is required such that electrons and holes move towards opposite electrodes.
Presence of CTLs creates suitable electric field at the ETL/perovskite and perovskite/HTL
interface to collect the electrons and the holes respectively.
[007] There is, therefore, a need in the art to provide a charge plasma perovskite solar cell
device that overcomes the above-mentioned and other limitations of the existing solutions and
utilize techniques, which are robust, accurate, fast, efficient, cost-effective and simple.
OBJECTS OF THE PRESENT DISCLOSURE
[008] Some of the objects of the present disclosure, which at least one embodiment herein
satisfies are as listed herein below.
[009] An object of the present disclosure is to provide a charge plasma perovskite solar cell
device.
[0010] An other object of the present disclosure is to provide a charge plasma perovskite
solar cell device for boosting open-circuit voltage.
[0011] An other object of the present disclosure is to provide a charge plasma perovskite
solar cell device will create additional build potential induced p-n junction.
[0012] Another object of the present disclosure is to provide a charge plasma perovskite
solar cell device is to increase efficiency and performance.
[0013] Another object of the present disclosure is to provide a charge plasma perovskite
solar cell device is to eliminate fabrication challenges and cost-effective.
SUMMARY
[0014] The present disclosure relates generally to a solar cell. More particularly, the
present disclosure pertains to a charge plasma perovskite solar cell device. [0015] In an aspect, the present disclosure provides a charged plasma perovskite solar cell device. The assembly includes: glass substrate; an interdigitated arrays (IDA) of microelectrode deposited on top surface of the glass substrate; a perovskite absorber layer deposited on top

surface of glass substrate and over the IDA electrodes, wherein electrical contact formed
between the IDA electrodes and the absorber layer; an IDA electrodes deposited on the bottom
surface of the glass substrate to create the electron-hole charge plasma upto Debye length in the
absorber layer near the front surface of the substrate. The front IDA metal electrodes are
different from the back IDA metal.
[0016] In an aspect, the top layer may comprise of light absorption material such as
perovskite deposited on the front IDA electrodes and the top surface of the substrate.
[0017] In an aspect, the front and back IDA electrodes may be patterned using evaporation
technique using spin coated photoresist on glass substrate followed by baking. The substrate may
be then exposed to UV light through a photo-mask with the desired pattern for IDA followed by
removal of photoresist layer with washing the substrate in a developer solution.
[0018] In an aspect, the front IDA electrodes may be 4-methoxythiophenol (OMeTP) and 4
chlorothiophenol (C1TP) self-assembled monolayer (SAM) modified gold contacts to achieve
desired metal work functionto be used as cathode and anode, respectively.
[0019] In an aspect, the back IDA electrodes may be selected from the group of metals with
metal work function < 4.6eV,and metal work function > 4.6eV for the formation of n-type
charge plasma and p-type charge plasma, respectively in the top absorber layer upto Debye
length near the front surface of the substrate.
[0020] In an aspect, the glass substrate may be sandwiched between the front IDA
electrodes, top absorber layer, and the back IDA electrodes.
[0021] In an aspect, the present method provides charge plasma perovskite solar cell device.
The method comprising: depositing a barrier layer on the front and back surface of an insulating
layer, etching the barrier layer from the front and back surface of the insulating layer, thereby
forming and pattering a plurality of first metal blocks at top surface of the insulating layer and a
plurality of second metal blocks at bottom surface of the insulating layer; and depositing a top
layer on the plurality of first metal blocks, thereby forming electrical contact between the
plurality of first metal blocks, and establishing charge plasma connection with the plurality of
second metal blocks, wherein electron-hole charge plasma is created in the absorber layer near
the front surface of the insulating layer, wherein the first metal being different from the second
metal.

BRIEF DESCRIPTION OF FIGURES
[0022] In the figures, similar components and/or features may have the same reference label.
Further, various components of the same type may be distinguished by following the reference
label with a second label that distinguishes among the similar components. If only the first
reference label is used in the specification, the description is applicable to any one of the similar
components having the same first reference label irrespective of the second reference label.
[0023] FIG. 1 illustrates a charge plasma perovskite solar cell device in accordance with an
embodiment of the present disclosure.
[0024] FIG. 2 illustrates calibrated perovskite solar cell device in accordance with an
embodiment of the present disclosure.
[0025] FIG. 3 illustrates various fabrication stages of calibrated perovskite solar cell 200 in
accordance with an embodiment of the present disclosure.
[0026] FIG. 4 illustrates various fabrication stages of charge plasma perovskite solar cell
device 100 in accordance with an embodiment of the present disclosure.
[0027] FIGs. 5A and 5B illustrate an energy band diagram (EBD) and electron-hole
concentration of calibrated device 200 and proposed device 100, in accordance with an
embodiment of the present disclosure.
[0028] FIGs. 6A, 6B, 6C and 6D illustrate contour representation of electron and hole
concentration, respectively in the absorber layer, in accordance with an embodiment of the
present disclosure.
[0029] FIGs. 7A and 7B illustrate strength of x-direction electric field in the calibrated
device 200 and the proposed device 100, respectively, in accordance with an embodiment of the
present disclosure.
[0030] FIG. 8 illustrates current density-voltage (J-V) curve associated with the calibrated
device 200 and the proposed device 100, in accordance with an embodiment of the present
disclosure.
[0031] FIG. 9 illustrates a method of working of proposed device in accordance with an
exemplary embodiment of the present disclosure.

DETAILED DESCRIPTION
[0032] Embodiments of the present disclosure include various steps, which will be described below. The steps may be performed by hardware components or may be embodied in machine-executable instructions, which may be used to cause a general-purpose or special-purpose processor programmed with the instructions to perform the steps. Alternatively, steps may be performed by a combination of hardware, software, and firmware or by human operators. [0033] If the specification states a component or feature "may", "can", "could", or "might" be included or have a characteristic, that particular component or feature is not required to be included or have the characteristic.
[0034] Exemplary embodiments will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments are shown. This disclosure may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. These embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the disclosure to those of ordinary skill in the art. Moreover, all statements herein reciting embodiments of the disclosure, as well as specific examples thereof, are intended to encompass both structural and functional equivalents thereof. Additionally, it is intended that such equivalents include both currently known equivalents as well as equivalents developed in the future (i.e., any elements developed that perform the same function, regardless of structure).
[0035] Thus, for example, it will be appreciated by those of ordinary skill in the art that the diagrams, schematics, illustrations, and the like represent conceptual views or processes illustrating systems and methods embodying this disclosure. The functions of the various elements shown in the figures may be provided through the use of dedicated hardware as well as hardware capable of executing associated software. Similarly, any electronic code generator shown in the figures are conceptual only. Their function may be carried out through the operation of program logic, through dedicated logic, through the interaction of program control and dedicated logic, or even manually, the particular technique being selectable by the entity implementing this disclosure. Those of ordinary skill in the art further understand that the exemplary hardware, software, processes, methods, and/or operating systems described herein are for illustrative purposes and, thus, are not intended to be limited to any particular named.

[0036] Various terms as used herein are shown below. To the extent a term used in a claim
is not defined below, it should be given the broadest definition persons in the pertinent art have
given that term as reflected in printed publications and issued patents at the time of filing.
[0037] Reference to "an embodiment" in this description indicates that a particular
configuration, structure or characteristic described regarding the embodiment is included in at
least one embodiment. Hence, expressions such as "in an embodiment" and the like, present in
various parts of this description, do not necessarily refer to the same embodiment. Furthermore,
particular configurations, structures or characteristics may be combined in any suitable manner
in one or more embodiments. References herein are used for facilitating the reader, and thus they
do not define the scope of protection or the range of the embodiments.
[0038] The present disclosure relates generally to a solar cell. More particularly, the
present disclosure pertains to a charge plasma perovskite solar cell device.
[0039] In an embodiment, the present disclosure provides a charged plasma perovskite solar
cell device. The assembly includes: a top layer being a charge carrier; a plurality of first metal
block positioned between top surface of insulating layer and the top layer, wherein electrical
contact formed between the plurality of first metal block and the top layer; a plurality of second
metal block on bottom surface of the insulating layer, such that plurality of second metal block is
not interconnected with the plurality of first metal block, wherein electron-hole charge plasma
created in the top layer to the front surface of the insulating layer followed by bottom surface of
the plurality of second metal block, such that the plurality of first metal block is different from
the plurality of second metal block.
[0040] In an embodiment, the top layer can include light absorption material such as
perovskite deposited on the plurality of first metal block and the top surface of the insulating
layer.
[0041] In an embodiment, the plurality of first metal block and the plurality of second metal
block configured with etched metal block, wherein the plurality of first metal block can be SAM
modified gold contacts and the plurality of second metal block can be selected from group of
metals with metal work function < 4.6eV, and metal work function > 4.6eV.
[0042] In an embodiment, the insulating layer can be a glass sandwiched between a plurality
of the first metal block, the top layer, and the plurality of the second metal block.

[0043] In an embodiment, the present disclosure provides a method for formation of charge plasma perovskite solar cell device. The method can be including: depositing a barrier layer on the front and back surface of the insulating layer, etching the barrier layer from the front and back surface of the insulating layer, thereby forming and pattering a plurality of first metal block at top surface of the insulating layer and a plurality of second metal blocks at bottom surface of the insulating layer; and depositing a top layer on the plurality of first metal block, thereby forming electrical contact between first metal block and charge plasma connection with the second metal block, wherein electron-hole charge plasma is created in the absorber layer near the front surface of the insulating layer, wherein the first metal being different from the second metal.
[0044] FIG. 1 illustrates a charge plasma perovskite solar cell device 100 in accordance with an embodiment of the present disclosure.
[0045] In an embodiment, a solar cell device lOOcan include a top layer 106 such as light-absorbing layer, first metal blocks 104-a, and 104-b (also, referred to as front IDA electrode blocks 104-a, and 104-b),second blocks 108-a, 108-b, 108-c, and 108-d (also, referred to as back IDA electrode blocks 108-a, 108-b, 108-c, 108-d), and insulating layer 102, where the insulating layer 102 can be configured using glass substrate layer In an embodiment, the front IDA electrode blocks 104-a, and 104-b can be placed between the light-absorbing surface 106 and insulating glass substrate layer 102 of material, In an embodiment, the front IDA electrode block 104-a can act as anode, and 104-b can act as cathode. In another embodiment, the back IDA electrode blocks 108-a, 108-b, 108-c, and 108-dcan be placed on the bottom surface of the insulating glass substrate layer 102 such that front IDA electrode blocks 104-a, 104-b and the back IDA electrode blocks 108-a, 108-b, 108-c, 108-d are not in electrical contact with each other.
[0046] In an embodiment, the device 100 includes top layer 106 such as perovskite. The perovskite structured compound can bemost commonly a hybrid organic-inorganic lead, or tin halide-based material actsas the light-absorbing layer 106.The perovskite characteristics include superconductivity, magnetoresi stance, ionic conductivity, and a multitude of dielectric properties, which can be of great importance in solar cell. The perovskite has a protruding surface, which can be positioned on the front IDA electrode blocks 104-a, 104-b layer and the insulating layer 102.

[0047] In an embodiment, the device 100 includes metal blocks. The material of the metal blocks can, therefore, be chosen based on a first set of characteristics such as providing low resistivity, having low roughness, chemically inert, and good adhesion to the material of the light-absorbing layer 106. The front IDA electrode blocks 104-a, 104-b and the back IDA electrode blocks 108-a, 108-b, 108-c, 108-d selected from materials such as, but not limited to, SAM modified gold, copper, and aluminium, and the group of metals with metal work function ((pm)< 4.6eV and (pm> 4.6eV that can be used for the formation of n-type charge plasma and p-type charge plasma, respectively, in the top absorber layer upto Debye length near the front surface of the substrate. The front IDA electrode blocksl04-a, 104-bcan be different from the second metal blocks 108-a, 108-b, 108-c, 108-d.
[0048] In an embodiment, the device 100 includes insulating glass substrate layer 102. The insulating glass substrate layer 102 can be placed between any or a combination ofa top absorber layer 106, the front IDA electrode blocks 104-a, 104-b, and the back IDA electrode blocks 108-a, 108-b, 108-c, 108-d. In an exemplary embodiment, air can act as an excellent insulator, and lightning passes through air because it has very high voltage that can overwhelm, or breaks down, air's ability to insulate. The material of insulating layer 102, such as glass, can be chosen based on resistance, specific resistance, dielectric strength, mechanical strength, resisting high temperature and the likes.
[0049] FIG. 2 illustrates calibrated perovskite solar cell device 200 in accordance with an embodiment of the present disclosure.
[0050] In an embodiment, calibrated perovskite solar cell200 (also, referred to as calibrated
perovskite solar cell 200, herein) can include atop absorber layer 206 with a protruding surface, and front IDA electrode blocks 204-a, and 204-b. The perovskite solar cell 200, without taking into consideration charge plasma concept, can beused for the comparison of measurement values delivered by the charge plasma perovskite solar cell device 100 (as shown in FIG. 1) under test, with those of a solar cell standard of known accuracy. Such a standard could be used as/ in another measurement device of known accuracy, the calibrated device 200 generating quantity to be measured such as open circuit voltage, short circuit current, fill factor and power conversion efficiency. The top layer 206 such as light-absorbing layer can be arranged at the top surface of the front IDA electrode blocks204-a, 204-b and the insulating glass substrate layer 202, the front IDA electrode blocks 204-a, 204-b can be arranged on the top surface of the insulating layer 202

such as glass. The electrical contacts can be thereby in galvanic contact with the top layer 206 and the metal layer 204-a, 204-b allowing electrical currents to flow between the layers. [0051] FIG. 3 illustrates various fabrication stages of calibrated perovskite solar cell 200 in accordance with an embodiment of the present disclosure.
[0052] In an embodiment, first of all, an insulating glass substrate layer 202 can be used for patterning the front IDA electrode blocks_204-a, and 204-b, which can be followed by deposition of top absorber layer206 on the front IDA electrode blocks_204-a, 204-b. [0053] In an embodiment, fabrication stages of the calibrated perovskite solar cell 200 may further include deposition of the front IDA electrode blocks, which can be performed using evaporation technique with the help of spin coated photoresist on glass substrate. The stage of deposition of the front and back IDA electrode blocks can be followed by a stage of baking of glass substrate. The baked substrate can be then exposed to UV light through a photo-mask with the desired pattern for the IDA electrode blocks. It can be followed by a stage of removal of photoresist layer, which can be done by washing the insulating glass substrate layer 202 in a developer solution. Then, spin coating of the top absorber layer 206 can be done on top of the surface of insulating glass substrate layer 202 as well as over the front and back IDA electrodes, whereby an electrical contact can be formed between the front IDA electrode blocks and the top absorber layer 206, hence, forming a calibrated perovskite solar cell 200.
[0054] FIG. 4 illustrates various fabrication stages of charge plasma perovskite solar cell devicelOO in accordance with an embodiment of the present disclosure.
[0055] In an embodiment, the device 100 includes front IDA electrode blocks 104-a and 104-b, and back IDA electrode blocks 108-a, 108-b, 108-c, and 108-d, top absorber layer 106 and insulating glass substrate 102. In an embodiment, the front IDA electrode blocksl04-a andl04-b, and the back IDA electrode blocks 108-a, 108-b, 108-c, and 108-d can be fabricated using evaporation technique with the help of spin coated photoresist on glass substrate followed by baking of glass substrate. The substrate can then be exposed to UV light through a photo-mask with the desired pattern for the front IDA electrode blocks 104-a andl04-band the back IDA electrode blocks 108-a, 108-b, 108-c, and 108-d.It can be followed by removal of photoresist layer with washing the glass substratein a developer solution. Spin coating of the top absorber layer 106 can be done on top surface of the glass substrate layer 202and over the front IDA electrode blocksl04-a andl04-b, whereby an electrical contact can be formed between the front

IDA electrode blocksl04-a andl04-band the top absorber layerl06. In an embodiment, the deposited back IDA electrode blocks 108-a, 108-b, 108-c, and 108-dcan create an electron-hole charge plasma upto Debye length in the top absorber layer 106 near the front surface of the substrate. The front IDA electrode blocks 104-a andl04-bcan be different from the back IDA electrode blocks 108-a, 108-b, 108-c, and 108-d.
[0056] FIGs. 5A and 5B illustrate an energy band diagram (EBD) and electron-hole concentration of calibrated device 200 and proposed device 100, in accordance with an embodiment of the present disclosure.
[0057] In an embodiment, the EBD of the devices can be obtained under the dark condition without biased voltage, which can include conduction band energy, valence band energy and quasi Fermi energy along with electron and hole concentration for both, the calibrated device 200 and the proposed device 100. In an embodiment, data associated with the EBD, as illustrated in FIGs. 5A and 5B, can be obtained from anode and cathode electrodes of the front IDA electrode blocks of both, the calibrated device 200 and the proposed device 100. [0058] In an embodiment, as illustrated in FIG. 5A, conduction band and valence band associated with the calibrated device 200 can be represented using dash dot lines, whereas, conduction band, valence band associated with the proposed device 100 can be represented using solid lines. In an embodiment, quasi Fermi energy can also be illustrated in FIG. 5A, which can be same for both, the calibrated device 200 and the proposed device 100. In an illustrative embodiment, Schottky contact with front IDA electrode block 204-a and 204-b can be observed in the calibrated device 200, which can be due to the work function difference between the top absorber layer 206 and metals used for the front IDA electrode blocks 204-a and 204-b. The said Schottky contact can result in formation of dipole field between the anode and cathode contact of the front IDA electrode blocks204-a and 204-b, which can assist in extraction of light generated charge carriers, which can be generated in top absorber layer 206 after illumination, in opposite direction i.e. electrons move towards cathode terminal and hole moves towards anode terminal. The collection of charge carriers or the photovoltaic performance solely depends on the difference between the work function of metal electrodes used for anode and cathode in the front IDA electrode blocks204-a and 204-b.
[0059] In an embodiment, in the proposed device 100 a significant increase in electron concentration and hole concentration near cathode region and anode region, respectively, can be

obtained using charge plasma technique, which can result in formation of additional PN junction with the help of charge plasma technique. Further, an additional built-in potential inside the devicelOO can enable better electron-hole movement and improved collection in an external circuit compared to calibrated device 200. In an illustrative embodiment, the formation of electron-hole plasma can be achieved using two different metals with work functions cpm, n <4.6eV and (pm, P> 4.6eV, which can result in improved efficiency of the device 100. [0060] In an embodiment, as illustrated in FIG. 5B, electron concentration and hole concentration in the calibrated device 200 can be depicted by dash dot lines, whereas, electron concentration and hole concentration in the proposed device 100 can be depicted by solid lines. [0061] FIGs. 6A, 6B, 6C and 6D illustrate contour representation of electron and hole concentration, respectively in the absorber layer, in accordance with an embodiment of the present disclosure.
[0062] In an embodiment, FIGs. 6A and 6B illustrate contour representation of electron and hole concentration, respectively, in the absorber layer 206 associated with the calibrated device 200, and FIGs. 6C and 6D illustrate contour representation of electron and hole concentration, respectively, in the absorber layer 106 for the proposed device 100..
[0063] In an embodiment, enhanced electron and hole concentration and additional built in potential of the proposed device 100 can be validated through comparison of the contour representation associated with the proposed devicelOO with that of the calibrated device200. [0064] FIGs. 7A and 7B illustrate strength of x-direction electric field in the calibrated device 200 and the proposed device 100, respectively, in accordance with an embodiment of the present disclosure.
[0065] In an embodiment, in FIG. 7A, the x-direction component of the electric field shows the higher intensity at the interface of top absorber layer 206 and the front IDA electrode blocks204-a and 204-b of the calibrated device 200. The said electric field can create electric dipole, which can assist in the flow and collection of electron and holes in opposite direction. In another embodiment, FIG. 7Bshows additional electric field in the top absorber layer 106 between the anode and cathode contact of front IDA electrode blocks 104-a andl04-bof the proposed device 100. The intensity of additional electric field can be found to be higher near interface of insulating glass substrate 102 and top absorber layer 106, and can reduce when moving away from the interface. The formation of additional electric field can be due to the

formation of electron hole plasma inside the absorber layer 106, which can beattributed to the presence of additional contacts in the form of back IDA electrode blocksl08-a, 108-b, 108-c, andl08-dwith appropriate metal work function, as stated previously, (pm> n < 4.6eV and (pm> p> 4.6eV. The additional electric field can be created due to charge plasma exert additional force on the light generated electron hole pairs and can enable in the better flow and collection in the external circuit compared to the calibrated device 200.
[0066] FIG. 8 illustrates current density-voltage (J-V) curve associated with the calibrated device 200 and the proposed device 100, in accordance with an embodiment of the present disclosure.
[0067] In an embodiment, FIG. 8 illustrates current density-voltage curve associated with the calibrated device 200 and the proposed device 100, in accordance with an embodiment of the present disclosure. In an embodiment, the current density-voltage curve associated with the calibrated device 200 can be depicted through dash dot lines, whereas, the current density-voltage curve associated with the proposed device 100 can be depicted through solid lines. In an embodiment, a significant enhancement in the performance of the proposed device 100 can be seenas compared to the calibrated device 200. In an embodiment, the said enhancement can be attributed to the presence of charge plasma technique, which can result in creation of additional electric field inside the top absorber layer 106 for better collection of light generated electron hole pairs.
[0068] FIG. 9 illustrates a method of working of proposed device in accordance with an exemplary embodiment of the present disclosure.
[0069] In an embodiment, the present disclosure elaborates upon a method for a charge plasma perovskite solar cell device that can include, at block 902, depositing a barrier layer on the front and back surface of an insulating layer, where the barrier layer, which can be any or a combination of photoresist and photo-mask, can be exposed to irradiations. In an illustrative embodiment, the glass substrate can be baked, which can be further followed by the exposure of the glass substrate to the irradiations, for example, Ultraviolet (UV) rays. The glass substrate can be covered with a photomask of a pre-defined pattern, and then can be exposed to the UV rays, so as to obtain the desired pattern of the front IDA electrodes and the back IDA electrodes. [0070] In an embodiment, the method further can include, at block 904, depositing and patterning ofa first metal and a second metal on top surface and bottom surface respectively on

an insulating layer. In an illustrative embodiment, the barrier layer can be a photoresist, and the insulating layer can be a glass substrate, and front IDA electrodes and back IDA electrodes can be deposited and patterned on the glass substrate using evaporation technique with the help of spin-coated photoresist.
[0071] In an embodiment, the method further, can include, at block 906, etching the remainder barrier layer, which is being deposited at the block 902 and block 904,from the first metal and the second metal, thereby forming and patterning a plurality of first metal blocks at top surface of the insulating layer and a plurality of second metal blocks at bottom surface of the insulating layer. In an illustrative embodiment, after exposing the glass substrate to the UV rays, the photoresist layer of the glass substrate can be removed by a developer solution, which can be including alkali and metol or hydroquinone mixed with water.
[0072] In an embodiment, the method further, can include, at block 908, depositing a top layer on the plurality of first metal blocks that are being formed and patterned at the block 906. In an embodiment, the top layer being in state to facilitate electrical contacts with front metal blocks. In an illustrative embodiment, spin coating of the top layer, which can be a perovskite layer, can be done on top surface of the glass substrate and over the front IDA electrodes, wherein electron-hole charge plasma is created in the top absorber layer near the front surface of the insulating layer.
[0073] In an embodiment, the plurality of first metal blocks can include self-assembled monolayer modified gold, and material of the plurality of second metal blocks can be selected from a group of metals with work functions lower than 4.6eV and greater than 4.6eV. in an illustrative embodiment, the plurality of second metal blocks of metals having work functions lower than 4.6eVcan facilitate generation of electron plasma, and the plurality of second metal blocks of metals having work functions greater than 4.6eVcan facilitate generation of bulk plasma.
[0074] It would be appreciated that numerous simulation analysishas been conducted to verify the results of various embodiments of the present disclosure. Table 1 represents exemplary simulated photovoltaic parameter results obtained with the performance of photovoltaic device is measured on the basis of photovoltaic parameters: short circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF) and power conversion efficiency (PCE) when system disclosed herein was utilized for charge plasma perovskite solar cell under various conditions.

Table 1. Photovoltaic Parameters

Devices Jsc (mA.cm2) Voc(mV) FF (%) PCE (%)
Calibrated 10.8 597 39.9 2.58
Invented 13.1 638 42.7 3.58
[0075] As used herein, and unless the context dictates otherwise, the term "coupled to" is intended to include both direct coupling (in which two elements that are coupled to each other or in contact each other) and indirect coupling (in which at least one additional element is located between the two elements). Therefore, the terms "coupled to" and "coupled with" are used synonymously. Within the context of this document terms "coupled to" and "coupled with" are also used euphemistically to mean "communicatively coupled with" over a network, where two or more devices are able to exchange data with each other over the network, possibly via one or more intermediary device.
[0076] Moreover, in interpreting both the specification and the claims, all terms should be interpreted in the broadest possible manner consistent with the context. In particular, the terms "comprises" and "comprising" should be interpreted as referring to elements, components, or steps in a non-exclusive manner, indicating that the referenced elements, components, or steps may be present, or utilized, or combined with other elements, components, or steps that are not expressly referenced. Where the specification claims refer to at least one of something selected from the group consisting of A, B, C ... .and N, the text should be interpreted as requiring only one element from the group, not A plus N, or B plus N, etc.
[0077] While some embodiments of the present disclosure have been illustrated and described, those are completely exemplary in nature. The disclosure is not limited to the embodiments as elaborated herein only and it would be apparent to those skilled in the art that numerous modifications besides those already described are possible without departing from the inventive concepts herein. All such modifications, changes, variations, substitutions, and equivalents are completely within the scope of the present disclosure. The inventive subject matter, therefore, is not to be restricted except in the spirit of the appended claims.

ADVANTAGES OF INVENTION
[0078] The present disclosure provides a charge plasma perovskite solar cell device.
[0079] The present disclosure provides a charge plasma perovskite solar cell device for
boosting open circuit voltage.
[0080] The present disclosure provides a charge plasma perovskite solar cell device will
create additional build potential induced p-n junction.
[0081] The present disclosure provides a charge plasma perovskite solar cell device is to
increase efficiency and performance.
[0082] The present disclosure provides a charge plasma perovskite solar cell device is to
eliminate fabrication challenges and cost-effective.

We Claim:
1. A charge plasma perovskite solar cell device, said device comprising:
a top layer being a charge carrier;
a plurality of first metal blocks positioned between top surface of an insulating layer and the top layer, wherein an electrical contact is formed between the plurality of first metal blocks and the top layer;
a plurality of second metal blocks coupled to bottom surface of the insulating layer such that each of the plurality of second metal blocks fails to align with the plurality of first metal,
wherein electron-hole charge plasma is created between the top layer and the plurality of second metal blocks, such that the plurality of first metal enables extraction of the generated carriers within the top layer to enhance the collection probability and improvement in open circuit voltage.
2. The device as claimed in claim 1, wherein the top layer comprises of perovskite deposited on the plurality of first metal blocks and the top surface of the insulating layer.
3. The device as claimed in claim 1, wherein the plurality of first metal blocks and the plurality of second metal blocks are configured with etched metal, wherein material of the plurality of first metal blocks is self-assembled monolayer modified gold, and material of the plurality of second metal is selected from a group of metals with metals with work functions lower than 4.6eV and greater than 4.6eV.
4. The device as claimed in claim 1, wherein material of the insulating layer comprises glass and silica.
5. A method for charge plasma perovskite solar cell device, said method comprising:
depositing a barrier layer on the front and back surface of the insulating layer, and wherein the barrier layer is exposed to irradiation in desired pattern;
depositing and pattering of a first metal and a second metal on top surface and bottom surface, respectively on the insulating layer;

etching the barrier layer from the first metal and the second metal, thereby forming and patterning a plurality of first metal blocks at top surface of the insulating layer and plurality of second metal blocks at bottom surface of the insulating layer; and
depositing a top layer on the plurality of first metal blocks, the top layer being in state to facilitate electrical contacts with the plurality of first metal blocks, and wherein electron hole charge plasma created from the top layer to the plurality of first metal blocks, and wherein the first metal being different from the second metal.
6. The method as claimed in claim 5, wherein the top layer comprises of light absorption material such as perovskite deposited on the plurality of first metal blocks and the top surface of the insulating layer.
7. The method as claimed in claim 5, wherein the plurality of first metal blocks and the plurality of second metal blocks configured with etched metal, wherein the plurality of first metal blocks comprise self-assembled monolayer modified gold, and material of the plurality of second metal blocks is selected from a group of metals with work functions lower than 4.6eV and greater than 4.6eV.
8. The method as claimed in claim 5, wherein the insulating layer comprises of glass substrate sandwiched between plurality of the first metal, the top layer, and the plurality of the second metal.