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Cleaning Composition, Method For Cleaning Semiconductor Substrate, And Method For Producing Semiconductor Element
Abstract: The present invention addresses the problem of providing: a cleaning composition which exhibits excellent removability of residues (in particular, residues after CMP), while having excellent anti-corrosion properties of copper; a method for cleaning a semiconductor substrate; and a method for producing a semiconductor element. A cleaning composition according to the present invention contains citric acid, 1-hydroxyethane-1,1-diphosphonic acid, a sulfonic acid-based surfactant and water. With respect to this cleaning composition, the mass ratio of the content of the citric acid to the content of the 1-hydroxyethane-1,1-diphosphonic acid is from 20 to 150; the mass ratio of the content of the citric acid to the content of the sulfonic acid-based surfactant is from 70 to 1,500; and the pH is from 0.10 to 4.00.
Notices, Deadlines & Correspondence
Patent Information
Applicants
FUJIFILM CORPORATION
Inventors
1. MURO Naotsugu
2. INABA Tadashi
3. KAMIMURA Tetsuya
Specification
Documents
Application Documents
| # | Name | Date |
|---|---|---|
| 1 | 202347068588-STATEMENT OF UNDERTAKING (FORM 3) [12-10-2023(online)].pdf | 2023-10-12 |
| 2 | 202347068588-PROOF OF RIGHT [12-10-2023(online)].pdf | 2023-10-12 |
| 3 | 202347068588-PRIORITY DOCUMENTS [12-10-2023(online)].pdf | 2023-10-12 |
| 4 | 202347068588-FORM 18 [12-10-2023(online)].pdf | 2023-10-12 |
| 5 | 202347068588-FORM 1 [12-10-2023(online)].pdf | 2023-10-12 |
| 6 | 202347068588-DECLARATION OF INVENTORSHIP (FORM 5) [12-10-2023(online)].pdf | 2023-10-12 |
| 7 | 202347068588-COMPLETE SPECIFICATION [12-10-2023(online)].pdf | 2023-10-12 |
| 8 | 202347068588-FORM-26 [12-12-2023(online)].pdf | 2023-12-12 |
| 9 | 202347068588-FORM 3 [21-02-2024(online)].pdf | 2024-02-21 |