Composition For Forming Film For Semiconductor, Laminate, And Substrate Laminate

Abstract: The present invention is a composition for forming a film for a semiconductor and an application thereof, said composition including a linear siloxane compound (A) having a specific structure including an amino group selected from a primary amino group and a secondary amino group, a silicon atom, and a non-polar group which binds to the silicon atom; a silane compound (B) having a specific structure including an amino group selected from a primary amino group and secondary amino group, a silicon atom, and a non-polar group which binds to the silicon atom; and a cross-linking agent (C) having a specific structure including at least a -C(=O)OH group inside the molecule and having a weight average molecular weight of 200 or more and 2000 or less.

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