Abstract: A Drain Extended Tunnel FET (DeTFET) device is disclosed that outperforms state of art devices and can meet the requirements of High voltage / high power devices operating in the range of 5V - 20V for System on Chip (SoC). The device comprises a P+ SiGe source with an N-type Si Epilayer sandwiched between SiGe source and the gate stack, which enables vertical tunneling of minority carriers from SiGe P+ source into N-Epi region under the influence of gate field. The area tunneling between SiGe source and Si Epi region breaks the barrier imposed by thermionic injection based carrier transport from source to channel, which exists in DeMOS devices known in the art. The disclosed device results in improved performance in respect of ON current, leakage, sub-threshold slope, breakdown voltage and RF characteristics making it attractive for SoC applications as compared to its state of the art counterparts.
SOFT COPY ATTACHED IN PDF
| # | Name | Date |
|---|---|---|
| 1 | Form 5 [25-02-2016(online)].pdf | 2016-02-25 |
| 2 | Form 3 [25-02-2016(online)].pdf | 2016-02-25 |
| 3 | Form 18 [25-02-2016(online)].pdf | 2016-02-25 |
| 4 | Drawing [25-02-2016(online)].pdf | 2016-02-25 |
| 5 | Description(Complete) [25-02-2016(online)].pdf | 2016-02-25 |
| 6 | abstract 201641006497.jpg | 2016-07-11 |
| 7 | Form 3 [09-06-2017(online)].pdf | 2017-06-09 |
| 8 | 201641006497-FORM 3 [16-11-2018(online)].pdf | 2018-11-16 |
| 9 | 201641006497-FORM 3 [11-07-2019(online)].pdf | 2019-07-11 |
| 10 | 201641006497-Proof of Right (MANDATORY) [25-11-2019(online)].pdf | 2019-11-25 |
| 11 | 201641006497-FER.pdf | 2019-12-11 |
| 12 | 201641006497-Proof of Right [13-04-2020(online)].pdf | 2020-04-13 |
| 13 | 201641006497-FORM-26 [13-04-2020(online)].pdf | 2020-04-13 |
| 14 | 201641006497-PETITION UNDER RULE 137 [30-05-2020(online)].pdf | 2020-05-30 |
| 15 | 201641006497-OTHERS [30-05-2020(online)].pdf | 2020-05-30 |
| 16 | 201641006497-FER_SER_REPLY [30-05-2020(online)].pdf | 2020-05-30 |
| 17 | 201641006497-DRAWING [30-05-2020(online)].pdf | 2020-05-30 |
| 18 | 201641006497-CORRESPONDENCE [30-05-2020(online)].pdf | 2020-05-30 |
| 19 | 201641006497-COMPLETE SPECIFICATION [30-05-2020(online)].pdf | 2020-05-30 |
| 20 | 201641006497-CLAIMS [30-05-2020(online)].pdf | 2020-05-30 |
| 21 | 201641006497-ABSTRACT [30-05-2020(online)].pdf | 2020-05-30 |
| 22 | 201641006497-REQUEST FOR CERTIFIED COPY [28-10-2020(online)].pdf | 2020-10-28 |
| 23 | 201641006497-Response to office action [03-11-2020(online)].pdf | 2020-11-03 |
| 24 | 201641006497-PatentCertificate20-11-2023.pdf | 2023-11-20 |
| 25 | 201641006497-IntimationOfGrant20-11-2023.pdf | 2023-11-20 |
| 26 | 201641006497-OTHERS [09-01-2024(online)].pdf | 2024-01-09 |
| 27 | 201641006497-EDUCATIONAL INSTITUTION(S) [09-01-2024(online)].pdf | 2024-01-09 |
| 1 | 201641006497_20-11-2019.pdf |