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Drain Extended Tunnel Field Effect Transistor

Abstract: A Drain Extended Tunnel FET (DeTFET) device is disclosed that outperforms state of art devices and can meet the requirements of High voltage / high power devices operating in the range of 5V - 20V for System on Chip (SoC). The device comprises a P+ SiGe source with an N-type Si Epilayer sandwiched between SiGe source and the gate stack, which enables vertical tunneling of minority carriers from SiGe P+ source into N-Epi region under the influence of gate field. The area tunneling between SiGe source and Si Epi region breaks the barrier imposed by thermionic injection based carrier transport from source to channel, which exists in DeMOS devices known in the art. The disclosed device results in improved performance in respect of ON current, leakage, sub-threshold slope, breakdown voltage and RF characteristics making it attractive for SoC applications as compared to its state of the art counterparts.

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Patent Information

Application #
Filing Date
25 February 2016
Publication Number
35/2017
Publication Type
INA
Invention Field
ELECTRICAL
Status
Email
docket@khuranaandkhurana.com
Parent Application
Patent Number
Legal Status
Grant Date
2023-11-20
Renewal Date

Applicants

Indian Institute of Science
C V Raman Road, Bangalore, Karnataka 560012, India.

Inventors

1. SHRIVASTAVA, Mayank
Department of Electronic Systems Engineering, Indian Institute of Science, C V Raman Road, Bangalore, Karnataka 560012, India.

Specification

SOFT COPY ATTACHED IN PDF

Documents

Application Documents

# Name Date
1 Form 5 [25-02-2016(online)].pdf 2016-02-25
2 Form 3 [25-02-2016(online)].pdf 2016-02-25
3 Form 18 [25-02-2016(online)].pdf 2016-02-25
4 Drawing [25-02-2016(online)].pdf 2016-02-25
5 Description(Complete) [25-02-2016(online)].pdf 2016-02-25
6 abstract 201641006497.jpg 2016-07-11
7 Form 3 [09-06-2017(online)].pdf 2017-06-09
8 201641006497-FORM 3 [16-11-2018(online)].pdf 2018-11-16
9 201641006497-FORM 3 [11-07-2019(online)].pdf 2019-07-11
10 201641006497-Proof of Right (MANDATORY) [25-11-2019(online)].pdf 2019-11-25
11 201641006497-FER.pdf 2019-12-11
12 201641006497-Proof of Right [13-04-2020(online)].pdf 2020-04-13
13 201641006497-FORM-26 [13-04-2020(online)].pdf 2020-04-13
14 201641006497-PETITION UNDER RULE 137 [30-05-2020(online)].pdf 2020-05-30
15 201641006497-OTHERS [30-05-2020(online)].pdf 2020-05-30
16 201641006497-FER_SER_REPLY [30-05-2020(online)].pdf 2020-05-30
17 201641006497-DRAWING [30-05-2020(online)].pdf 2020-05-30
18 201641006497-CORRESPONDENCE [30-05-2020(online)].pdf 2020-05-30
19 201641006497-COMPLETE SPECIFICATION [30-05-2020(online)].pdf 2020-05-30
20 201641006497-CLAIMS [30-05-2020(online)].pdf 2020-05-30
21 201641006497-ABSTRACT [30-05-2020(online)].pdf 2020-05-30
22 201641006497-REQUEST FOR CERTIFIED COPY [28-10-2020(online)].pdf 2020-10-28
23 201641006497-Response to office action [03-11-2020(online)].pdf 2020-11-03
24 201641006497-PatentCertificate20-11-2023.pdf 2023-11-20
25 201641006497-IntimationOfGrant20-11-2023.pdf 2023-11-20
26 201641006497-OTHERS [09-01-2024(online)].pdf 2024-01-09
27 201641006497-EDUCATIONAL INSTITUTION(S) [09-01-2024(online)].pdf 2024-01-09

Search Strategy

1 201641006497_20-11-2019.pdf

ERegister / Renewals

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