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Energy Efficient Exclusive Or Gate For Multi Bit Adder Applications

Abstract: This invention presents an exclusive OR gate for multi-bit adder applications. The proposed exclusive OR gate is used to get the low amount of power and delay. The performance parameters of full adder circuit are improved by improving the performance parameters of exclusive OR gate. One transmission gate and one pass transistor with a 0.8 V supply voltage are used to design the proposed exclusive OR gate. The proposed exclusive OR gate is designed using 180nm CMOS technology with a total power consumption of 0.83 nW. The proposed exclusive OR gate is tested using spectre simulation model parameters and 162.5 ns delay is achieved during simulation. 3 claims & 1 Figure

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Patent Information

Application #
Filing Date
21 December 2021
Publication Number
05/2022
Publication Type
INA
Invention Field
ELECTRONICS
Status
Email
ipfc@mlrinstitutions.ac.in
Parent Application

Applicants

MLR Institute of Technology
Hyderabad-500 043, Medchal–District

Inventors

1. Dr. Chandra shaker Pittala
Department of Electronics and Communication Engineering, MLR Institute of Technology, Hyderabad-500 043, Medchal–District
2. Dr. S.V.S. Prasad
Department of Electronics and Communication Engineering, MLR Institute of Technology, Hyderabad-500 043, Medchal–District
3. Mr. K. Nishanth Rao
Department of Electronics and Communication Engineering, MLR Institute of Technology, Hyderabad-500 043, Medchal–District
4. Dr. D. Kiran
Department of Electronics and Communication Engineering, MLR Institute of Technology, Hyderabad-500 043, Medchal–District
5. Mr. C. Ashok kumar
Department of Electronics and Communication Engineering, MLR Institute of Technology, Hyderabad-500 043, Medchal–District
6. Mrs. B. Annapurna
Department of Electronics and Communication Engineering, MLR Institute of Technology, Hyderabad-500 043, Medchal–District
7. Mrs. S. Monika
Department of Electronics and Communication Engineering, MLR Institute of Technology, Hyderabad-500 043, Medchal–District
8. Mrs. B. Venkata Ramana
Department of Electronics and Communication Engineering, MLR Institute of Technology, Hyderabad-500 043, Medchal–District

Specification

Claims:The scope of the invention is defined by the following claims:

Claims:
1. Exclusive OR gate is designed to achieve the following.
a) Exclusive OR gate on simulation test bench with 0.8V supply voltage, achieved 162.5 ns amount of delay.
b) The simulation results reported 0.83 nW total power consumption, which include both static and dynamic power consumption.

2. As mentioned in claim 1, the total power consumption 0.83 nW is attained by removing the direct path between the supply and ground.

3. As mentioned in claim 1, The three transistors including one TG gate and one pass transistor are used to attain 162.5ns delay , Description:Field of Invention
The present invention relates to the design of low power consuming, energy efficient exclusive OR gate for full adder circuits. The full adder circuit require exclusive OR gate and carry circuits to produce Sum and carry outputs. In multi-bit adder applications, full adder circuit’s delay mainly depends on the delay of exclusive OR gate and carry circuit. Moreover, the exclusive OR gate consume more amount of power and delay than the other circuits in the full adder design. Hence, improving the delay performance of the exclusive OR gate will improve the overall performance of the full adder.
Background of the invention
Nowadays, there is continuous growth in signal processing, mobile communications, microprocessors, and computing devices because of portable electronic devices with low power consuming integrated circuits and systems. Many portable electronic devices and applications require longer battery life, high speed and small silicon area. The power available for these portable devices or wearable electronic devices is very limited, and the microelectronics technology has grown faster than the advanced battery technologies. The designers are restricted to design circuits with small silicon area, low-power consumption and high-speed (M. Hasan et al. [2002], IEEE Trans. Circuits Syst. II, 49, pp. 25-30). Due to the rapid growth in today’s VLSI technology, the IC designers are busy in making high performance systems with low power dissipation. 1-bit full adder circuits are mainly used in fundamental arithmetic operations like address calculation, subtraction, multiplication, division, etc. exclusive OR gate place a key role in producing Sum output and Carry output of full adder (H. T. Bui et al. [2002], IEEE Trans. Circuits Syst. II, 49, pp. 25-30).
These operations extensively used in various digital applications such as microprocessors and Digital Signal Processing (DSP) architecture. 1-bit full adder is the important building block of many other useful operations of the systems. In multi-bit adder applications, the overall performance depends on the performance of 1-bit carry cell (S. Goel et al. [2006], IEEE Trans. Very Large Scale Integr. (VLSI) Syst., 14, pp. 1309-1321). In chain structured adder applications such as array multipliers and RCA, carry cells generate carry-out, which acts as carry-in to the next stage. It is important to generate the signal with the least amount of delay. The delayed signal not only affects the overall propagation delay, but also creates glitches and dissipates more power in multi bit adders. Therefore, improving the delay performance of the exclusive OR gate is a main objective in multi-bit adder applications (H. Naseri et al. [2006], IEEE Trans. Very Large Scale Integr. (VLSI) Syst., 26, pp. 1481–1493).
Hybrid full adders are designed by including two input exclusive OR gate and carry circuit (US6700405B1, US 7185042B1). The exclusive OR gate is the major circuit in hybrid full adder, which consume high amount of power and also produce high amount of delay (US 2004/0153490 A1). Hence, the total power consumption and overall delay of full adder cell can be decreased by improving the delay and power consuming performance of the exclusive OR gate. The exclusive OR gate circuits has been designed in the literature using eleven transistors (US8653857B2), complementary field effect transistor(US4575648), CMOS logic gate (US7285986B2, US5576637, US5523707) Transmission Gate (TG) logic (US6356112B1), Cross Coupled Transistor (US4713790), Complementary Pass Transistor Logic (CPL). The main problem of DPL logic is NOT gate in the critical path of the circuit. Due to the presence of not gate in critical path, the delay is more in DPL based exclusive OR gate. In TG logic also, the short circuit power will increase the total power consumption of the circuit. In full adder designs, the exclusive OR gate is used to generate exclusive NOR gate function which is used to produce the carry output. The objective of this invention is designing of an exclusive OR gate using CMOS technology for full adder applications.
Summary of the invention
In the present innovative invention, is addressed the high amount of delay and power consumption in full adder circuits. The delay and power consumption problem is eliminated by designing an energy efficient exclusive OR gate. Only three transistors are used in the design of exclusive OR gate. Hence, the inverter in the critical path removed. Moreover, there is no direct path between the ground and power supply, short-circuit current has been reduced. Based on the above stated advantages, the exclusive OR gate can able to reduce the delay and total power consumption of full adder circuit.
Brief description of Drawing
In the figures which are illustrated exemplary embodiments of the invention.
Figure 1 Exclusive OR gate circuit
Detailed description of the invention
The full adder circuit is divided into three sub-modules Module-1 is a exclusive OR gate/ exclusive NOR gate circuit, which produces outputs Y and Y’. These outputs act as inputs to module-2 and module-3. The sum circuit and carry circuit are placed in module-2 and module-3 respectively. The module-2 and module-3 produce sum and carry outputs. Full adder circuit is one of the essential circuits in computing systems with three 1-bit inputs and two 1-bit outputs. The terminal relationship between the inputs and the outputs is expressed as
(1)
(2)
(3)

In hybrid logic, the exclusive OR gate output signal available as the input signal for module-2 and module-3. These exclusive OR gate circuit output signal along with carry input are available for the input of modules-2 and module-3. The equation in (2), can also write as
(4)
Form eq. (4), the sum circuit output is similar to exclusive OR gate logic output. Therefore the sum circuit in module-2 can also act as an exclusive OR gate circuit in module-1.
The exclusive OR gate circuit shown in Fig. 1. In Fig.1, when A is at logic ‘1’ transistor N2 is ON and pass the signal B’ to the Sum output. When A is at logic ‘0’, the transistors (P1 & N1) are ON and output terminal is connected to input B. When B is at logic ‘1’, the output signal also ‘1’ and when B is at logic ‘0’ output is also at logic ‘0’. The transistors P1 & N1 are in OFF state when A is at logic ‘1’. Thus, there will be no voltage drop problem in P1 & N1 transmission gate, whether logic ‘1’ or logic ‘0’ is passed through it. The transmission gate provides a full voltage swing. When we consider A is at logic ‘0’ the output is same as the input B and when A is ‘1’ then the output is same as inverted B.
The proposed circuit is designed and simulated using Cadence tools with 45 nm complementary metal oxide semiconductor technology. The proposed circuit supplied with 1 V supply voltage during the simulation and the maximum frequency of inputs was 1 GHz. A practical simulation test bench is used explore the advantages of the proposed circuits. To enable a real environment, inverters are added to the terminals of the test bench. A minimum of 1 fF capacitance output load is added at the output of each inverter.
The output load of four inverters is used, which results in 4 fF output load for the delay and power measurements. The transistor sizes of inverters are selected to produce a sufficient distraction as in practical circuit. The proposed circuit’s performance is examined in terms of worst-case delay, total power consumption and power delay product for the supply voltages range from 0.4V-1.8V. The load of the test circuit is also varied from 1 fF to 10 fF to evaluate the performance. In rise transition and fall transition of the output, the delay is measured from 50% of the input to 50% of the output signal voltage level. The power delay product is calculated by choosing a worst case delay among the two outputs and it is multiplied with the test circuit’s average power consumption.
The overall delay of the proposed carry generator circuits and full adders can be reduced by optimizing the transistor sizes without a significant increase in power consumption. In all the proposed circuits, transistor sizes are selected to achieve the minimum power delay product. Initially, all the proposed circuits designed with minimum transistor sizes, and an iterative process of re-designing is carried out to achieve minimum power delay product. As mentioned in the above Eq. 4, the exclusive OR gate is designed and it is shown in the Fig.1. Figure 1 gives the view about the design of an exclusive OR gate. The exclusive OR gate circuit shown in Fig. 1 is used in the design of 1-bit full adder circuits. The exclusive OR gate will produce less amount of delay and also consume low amount of power. The exclusive OR gate is best suits for the multi-bit adder applications and it can also be used as a Sum circuit in the full adder design.
3 claims & 1 Figure

Documents

Application Documents

# Name Date
1 202141059765-REQUEST FOR EARLY PUBLICATION(FORM-9) [21-12-2021(online)].pdf 2021-12-21
2 202141059765-FORM-9 [21-12-2021(online)].pdf 2021-12-21
3 202141059765-FORM FOR SMALL ENTITY(FORM-28) [21-12-2021(online)].pdf 2021-12-21
4 202141059765-FORM FOR SMALL ENTITY [21-12-2021(online)].pdf 2021-12-21
5 202141059765-FORM 1 [21-12-2021(online)].pdf 2021-12-21
6 202141059765-EVIDENCE FOR REGISTRATION UNDER SSI(FORM-28) [21-12-2021(online)].pdf 2021-12-21
7 202141059765-EVIDENCE FOR REGISTRATION UNDER SSI [21-12-2021(online)].pdf 2021-12-21
8 202141059765-EDUCATIONAL INSTITUTION(S) [21-12-2021(online)].pdf 2021-12-21
9 202141059765-DRAWINGS [21-12-2021(online)].pdf 2021-12-21
10 202141059765-COMPLETE SPECIFICATION [21-12-2021(online)].pdf 2021-12-21