Abstract: There is provided a method for manufacturing a flexible semiconductor device. The method of the present invention comprises the steps of: (a) preparing a metal foil having a concave portion; (b) forming a gate insulating film on a bottom face of the concave portion of the metal foil; (c) forming a semiconductor layer above the bottom face of the concave portion via the gate insulating film while making use of the concave portion as a bank member; and (d) forming a source electrode and a drain electrode such that they make contact with the semiconductor layer.
Please see the attachments.
| # | Name | Date |
|---|---|---|
| 1 | 6144-CHENP-2012 CORRESPONDENCE OTHERS 09-01-2013.pdf | 2013-01-09 |
| 1 | Power of Authority.pdf | 2012-07-17 |
| 2 | 6144-CHENP-2012 FORM-3 09-01-2013.pdf | 2013-01-09 |
| 2 | Form-5.pdf | 2012-07-17 |
| 3 | Drawings.JPG | 2012-07-17 |
| 3 | Form-3.pdf | 2012-07-17 |
| 4 | Form-1.pdf | 2012-07-17 |
| 5 | Drawings.JPG | 2012-07-17 |
| 5 | Form-3.pdf | 2012-07-17 |
| 6 | 6144-CHENP-2012 FORM-3 09-01-2013.pdf | 2013-01-09 |
| 6 | Form-5.pdf | 2012-07-17 |
| 7 | 6144-CHENP-2012 CORRESPONDENCE OTHERS 09-01-2013.pdf | 2013-01-09 |
| 7 | Power of Authority.pdf | 2012-07-17 |