Heteroepitaxial Structure Of Metal Nitride Layers With High Mole Fraction Of Aluminum

Abstract: A heteroepitaxial structure of metal-nitride layers with a high mole fraction of aluminum, comprising: - a first buffer layer (L1) of aluminum nitride (AlN) with a reduced dislocation density, coupled to a substrate; - a graded second buffer layer (L2) of aluminum gallium nitride (AlGaN) with an enhanced mole fraction of aluminum (Al) in a lower portion of the second buffer (L2) and a lower Al mole fraction in an upper portion of the second buffer layer (L2), where the thickness of the second buffer layer (L2) is higher than the thickness of the first buffer layer (L1); - at least an interlayer of AlGaN (L3), coupled to the graded second buffer layer (L2), where the Al mole fraction of the interlayer (L3) is greater than the Al mole fraction in the upper portion of the second buffer layer (L2) and less than the Al mole fraction of the lower portion of the second buffer layer (L2) and with substantially reduced thickness; and - a main layer (L4) of AlGaN is with a reduced dislocation density and an enhanced thickness, coupled to the interlayer of AlGaN, where the Al mole fraction is substantially equal to the Al mole fraction of upper portion of the second buffer layer (L2).

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