HIGH TEMPERATURE SUPERCONDUCTING WIRES AND COILS
Related Applications
[0001] This application claims the benefit under 35 U.S.C. §119(e) of U.S.
Provisional Patent Application No. 60/703,815, filed on July 29, 2005, entitled
"High Temperature-Superconducting Wires and,Coils," which-is incorporated
herein-by reference in its entirety.
[0002] This application is related to co-pending U.S. Patent Application No.
11/193,262, filed on July 29, 2005, and entitled "Architecture For High Temperature Superconductor Wire," the entire contents of which are incorporated
hereinby reference.
Field of the Invention
[0003] The present invention relates generally to high temperature
superconducting wires. In particular, the invention relates to coated conductors,
also called second generation, high temperature superconductor wires or tapes.
The present invention also relates to superconducting structures that can maintain
a constant current in varying magnetic field orientations.
Background of the Invention
[0004] Since the discovery of high-temperature superconducting (HTS)
materials (superconducting above the liquid nitrogen temperature of 77 K) there
have been efforts to develop various engineering applications using such HTS materials. In thin film superconductor devices and wires, the most progress has been made with fabrication of devices utilizing an oxide superconductor including yttrium, barium, copper and oxygen in the well-known basic composition of
YBagCuaO7-x (hereinafter referred to as Y123). Progress has also been made with
compositions containing rare earth, elements ("RE") partially substituted for Y.
Biaxially textured superconducting, metal oxides, such as Y123, have achieved
high critical current densities in a coated conductor architecture. These wires,
often referred to as second generation HTS wires,, are the preferred material for

many applications, including cables, motors, generators, synchronous
condensers, transformers, current limiters, and magnet systems for military, high
energy physics, materials processing, transportation and medical uses.
[0005] The current carrying capability of the HTS material is strongly related to
its crystalline alignment or texture. The oxide superconductor grains typically are aligned with their c axis perpendicular to the plane of the wire surface and the ab
plane parallel to the wire surface. Grain boundaries formed by the misalignment
of neighboring crystalline HTS grains are known to form an obstacle to
superconducting current flow, but this obstacle decreases with the increasing
degree of alignment or texture.Therefore to make, the material into a
commercially viable product, e.g. an HTS wire, the HTS material must maintain a
high degree of crystalline alignment or texture over relatively long distances.
Otherwise, the superconducting current carrying capacity (critical current density)
will be limited.
[0006] HTS materials can be fabricated with a high degree of crystallographic
alignment or texture over large areas by growing a thin layer of the material
epitaxially on top of a flexible tape-shaped substrate, fabricated so that it has a
high degrceof crystallographic texture at its surface. When the crystalline HTS
material is grown epitaxially on this surface, the crystal alignment of the HTS
material grows to match the texture of the substrate. In other words, the substrate
texture provides a template for the epitaxial growth of the crystalline HTS material.
Further, the substrate provides structural integrity to the HTS layer.
[0007] A substrate can be textured to provide a template that yields an
epitaxial HTS layer. Materials such as nickel, copper, silver, iron, silver alloys,
nickel alloys, iron alloys, stainless steel alloys, and copper alloys can be used,
among others. The substrate can be textured using a deformation process, such
as-one involving rolling and recrystallization annealing the substrate. An example
of such a process is the rolling-assisted biaxially textured substrate (RABiTS)
process. In this case large" quantities of metal can be processed economically by
deformation processing and annealing and can achieve a high degree of texture.

[0008] - One or more buffer layers can be deposited or grown on the substrate
surface with suitable crystallographic template on which to grow the HTS material.
Buffer layers also can provide the additional benefit of preventing diffusion of
atoms from the substrate material into the crystalline lattice of the HTS material or
of oxygen into the substrate material. This diffusion, or "poisoning," can disrupt
the crystalline alignment and thereby degrade the electrical properties of the HTS material. Buffer layers also can provide enhanced adhesion between the
substrate and the HTS layer. Moreover, the buffer layer(s) can have a coefficient
of thermal expansion that is well matched to that of the superconductor material. For implementation of the technology in commercial applications, where the wire may be subjected to.stress, this feature is desirable because it can help prevent
delamination of the HTS layer from the substrate.
[0009] Alternatively, a non-textured substrate such as Hastelloy can be used
and textured buffer layers deposited by means such as the ion-beam-assisted
deposition (IBAD) or inclined substrate deposition (ISD). Additional buffer layers
may be optionally deposited epitaxially on the IBAD or ISD layer to provide the
final template for epitaxial deposition of an HTS layer.
[0010] By using a suitable combination of a subsirate and one or more buffer
layers as a template, an HTS layer can be grown epitaxially with excellent crystal
alignment or texture, also having good adhesion to the template surface, and with
a'sufficient barrier to poisoning by atoms from the substrate. The HTS layer can
be deposited by any of a variety of methods, including the metal-organic
deposition (MOD) process, metal-organic chemical vapor deposition (MOCVD),
pulsed laser deposition (PLD), thermal or e-beam evaporation, or other
appropriate methods. Lastly, a cap layer can be added to the multilayer
assembly, which helps prevent contamination of and damage to the HTS layer from above. The cap layercan be, e.g., silver, and can be, e.g., sputtered onto
the HTS layer.
[0011] HTS wire development continues to seek improvements in critical current density, in particular, critical current density in high magnetic fields and

temperatures (JC(H,T)). This improvement can come by improving the "pinning" of
the superconducting vortices, which is the underlying mechanism for high critical
current density Jc in HTS materials. To achieve pinning in superconductors, local
potential energy differences should be matched in size as closely as possible to
the size of the normal core of the superconducting flux line or vortex. The cross-
sectional core has asize on the order of the coherence length, which is several
nanometers in high temperature superconducting cuprates and grows with
temperature. Thus, nanometer-sized defects are introduced into the oxide
superconductor grains to pin flux lines and improve current carrying properties in a
magnetic field.
[0012] The current carrying properties of crystallographically aligned layers of
oxide superconductor are dependent on magnetic field orientation. Figure 1 shows the typical field dependence of a metal-organic deposited (MOD) Y123 film on an oxide-buffered metal substrate with magnetic field oriented parallel and
perpendicular to the planar face of the film. At both 27K and 75K, with the
magnetic field oriented perpendicular to the planar face of thefilm, there is a
significant decrease in Ic from the value in parallel orientation, limiting the
usefulness of the Y123 wires in many coil applications. Many anticipated
appjications are planned for temperatures in the 55 to 65K region in magnetic
fields of 1 - 3 Tesla oriented perpendicular to the planar face of the film, which are
conditions at which performance drops significantly. In addition to the parallel and
perpendicular performance of the Y123 wires in magnetic field, it is important to
examine the field performance at intermediate angles as shown in Figure 2. As
seen in Figure 2, Y123 films typically show a small peak in the c-axis (0° and 180° or perpendicular to the planar face of the Y123 film), which can be enhanced
through the pre'sence of extended planar or linear defects (e.g., twin boundaries,
grain boundaries, a-axis grains).
[0013] In many applications, e.g., motors and magnetic coils, HTS wires will
experience local variations in the magnetic field orientation, so that the magnetic
field experienced in one region of the wire can be quite different from the magnetic
field experienced in another wire reaion. In such applications the Y123 wire

performance is determined by the minimum performance at any magnetic field
orientation, and not solely by that at the perpendicular orientation. Thus, the HTS
-I
wire demonstrates reductions in current density in regions where the magnetic
field deviates from an optimum orientation.
, Summary
': [0014]-" High temperature superconducting (HTS) wires are described, which
may be used in applications and devices experiencing different magnetic field
orientations at different locations within the wire or device. The HTS wires contain
at least two superconducting layers, each of which is selected for its performance
at a'particular magnetic field orientation. By selecting a combination of
superconducting layers, the HTS wire exhibits optimum performance in magnetic ■
fields oriented parallel to the wire surface (H//ab) or, perpendicular to the wire
surface (H//c), or at intermediate orientations. -■■•""
[0015] In one aspect of the invention, a,superconducting wire, includes at least
first and second superconducting layers disposed on one or more substrates in
stacked relationship. The first superconducting layer includes a first high
temperature superconducting oxide selected to provide a first predetermined ratio
of critical current'parallel to the surface of the superconductor layer Lo critical
current perpendicular to the surface of the superconductor layer (lc(ab)/lc(c)), and
the second superconducting layer includes a second high temperature '
superconducting layer selected to provide a second predetermined ratio of critical
current parallel to the surface of the superconductor layer to critical current
perpendirnlarto the surface of the superconductor layer (lc(ab)/lc(c)). The first
and second.superconductor layers,.in combination, provide a predetermined
overall critical current I'c in a selected magnetic field orientation.
[0016] In one or more embodiments, the first or the second high temperature
bupeiuoiiu'uuior is selected to provide enhanced critical current (lc(c)j in the
presence of magnetic fields oriented perpendicular to surface of the
. superconducting layer (H//c). The first predetermined ratio for lc(ab)/lc(c) is less

than or equal to 2.6, is less than 2.0, or less than 1.5, in an applied magnetic field
of 1 Tesla or greater, e.g., in the range of about 1 Tesla to about 6 Tesla.
[0017] " In one or more embodiments, the high temperature superconductor
includes a rare earth-alkaline earth-copper oxide including two or more rare earth
elements, e.g., one or more of erbium and holmium. Holmium and/or erbium are
'present in an amounl in the range of 25% to"150%'of the stoichiometric amount of
rare earth in rare earth-alkaline earth-copper oxide.
[0018] In oneor more embodiments, the high temperature superconductor .
includes a rare earth-alkaline earth-copper oxide and at least one second phase
nanoparticle comprising a metal-coritaihing compound located within a grain of the
oxide superconductor. •- ■ .
V"
[0019]-. In one or more-embodiments, the first orthe second high temperature
superconductor composition is selected to provide.enhanced critical current (Ic) in
the presence of magnetic fields oriented parallel to surface of the superconducting
layer [Hllab). The second predetermined ratio for lc(ab)/lc(c) is greater than 2.5,
or greater than 3.5, or greater than 5.5, in an applied magnetic field of 1 Tesla or
greater, e.g., in the range of about 1 Tesla to about 6 Tesla. -
[0020] In one or more embodiments, the high temperature superconductor
includes a rare earth-alkaline earth-copper oxide, wherein the copper to alkaline ■
earth ratio is greater than 1.5.
[0021] In one or more embodiments, the thicknesses of the first and second
superconductor layers are different, ihe.ifrickness of the first and second
superconductor layers are selected to provide a predetermined overall critical
current in a selected magnetic field orientation. Additional layers .that enhance
critical current density in magnetic fields either parallel or perpendicular to the
•surface of the superconductor layerrnaybe included-.
[0022] In one or more^embodiments, the selected magnetic field orientation is
between 0° (H//c) and 90° (H//ab).

[0023] In one or more embodiments, the superconductor wire includes a first
coated element. The first coated element, includes a first substrate, at least one
first buffer layer disposed on the first substrate and supporting the first
superconducting layer, and a first metallic protective layer disposed on the first
superconductor layer. The second coated element includes a second substrate,
at least one second buffer Jayer. disposed on the secondsubstrate and supporting "
the second superconducting layer,''and a second metallic protective layer
disposed on the second superconductor layer.
[0024] In dne or more embodiments, the superconducting wire also includes an
.intervening binder layer disposed between the first and second coated'elements
such that the first and second coated elements are joined at the first and second
substrates, or an intervening binder layer disposed between the first and second
coated elements such that the first.and second coated elements are joined at the
first and second metallic protective layers. '". ->£L.I
[0025] Another aspect of the invention involves a method of making a high
temperature superconducting device. The method includes providing a length of
superconducting wire comprising a first region comprising a high lc(c) high
temperature superconductor composition, a second region comprising of a high
lc(ab) high temperature superconductor composition, and a third region
comprising a mixture of the high lc(c) high temperature superconductor
~ composition and the high lc(ab) high temperature superconductor composition,
and arranging the length of superconductor in the device such that the first region
occupies avocation in the device experiencing a magnetic field orientation
perpendicular (0°) to the high temperature wire, the second region occupies a
location in the device experiencing a magnetic field orientation parallel (90°) to the
high temperature wire, and the third region occupies a location in the device
experiencing a magnetic field orientation between 0° and 90°, '
[0026], In one or more embodiments, the device is a coil; the first region of the
high temperature superconductor wire is positioned at the ends of the coil; the
second region of the high temperature superconductor wire is positioned in the

interior of the coil; and the third region of the high temperature superconductor
wire is positioned between the first and second regions.
[0027] In another aspect of the invention, an article includes a superconducting
wire comprising a high temperature superconductor layer, wherein the article
experiences a magnetic field of differing orientation at different locations in the,,^
article; and'wherein the composition of the high temperature superconductor.layer
is varied along it's length to accommodate the orientation of the magnetic field in a
given location.
[0028] In one or more embodiments, the article is a coil and, in operation, the
• coil experiences induced magnetic fields that range from substantially parallel to
the piane of the superconductor layer to substantial perpendicular to the plane of
. the-superconductor layer.
[0O29] In one or more embodiments, the composition of the superconductor
wire is primarily a high lc(c) high temperature superconductor composition in a
first region of the coil that experiences magnetic fields perpendicular to surface of
the superconducting layer during operation; the composition of the
superconductor wire comprises primarily a high lc(ab) high temperature
superconductor composition'in a second region of the coifthat experiences .
magnetic fields that are substantially parallel to surface of the superconducting
layer during operation; and the composition of the superconductor wire comprises
a mixture of a high lc(c) high temperature superconductor composition and a high
lc(ab) high temperature superconductor composition in a region of the coil that
experiences magnetic fields that are at an angle of between 0 and 90 degrees tc
surface of the.superconducting layer during operation.
[0030] . The selection of superconductor layers with different current carrying
performances in different magnetic fields alters the Ic anisotropy along H//ab and
Wilt directions. In particular, Ic and hence Jc, are increased "along H//c without.
reducing the Ic capacity along H//ab.

■ "s?.^ • ' - . - • .■
[0031]" By "stacked relationship" it is meant that the elements are'arrahged in a
stack, e.g., in overlaying relationship to one another wherein the layers may be in
contact or they may have, one or more intervening layers between them. No
stacking order is suggested or implied.
Brief Description of the Drawings . !■'•
[0C32] The invention is described WittVYeference to Ihe following figures' in •
which like references refer to like elements and which are presented for the
purposes of illustration only and are not intended to be limiting of the invention.
(0033]. ■•" Figure 1 illustrates \he critical current (Ic) for a Y-123 HTS wire in
magnetic fields (H) of increasing strength and with magnetic fields oriented
parallel (H//ab, 0=90°) and perpendicular (H//c, 9=0°) to the planar face of the
f ilm at 26K and 75K. ., . " '
[0034] Figure 2 illustrates the field performance (Ic) at intermediate magnetic
. field orientations (0° < 0 < 90°) for the HTS wires of Figure .1 at applied magnetic
fields of 1-7 T. '.-.""
[0035] Figure 3 illustrates the magnetic field distribution around the end turns
of a solenoid electromagnet. • -
[0036] Figure 4 is a cross-sectional illustration of a two layer HTS wire having
two superconductor layers with (A) high lc(ab); (B) high lc(c) and (C) one layer
each of high l.c(ab) and lc(c); and Figure 4D is a cross-sectional illustration of a
two layer HTS wire having a copper interlayer.
[0037] Figure-5 is a cross-sectional illustration of a double sided HTS wire
having two superconductor layers with (A) high lc(ab), (B) high lc(c) and (C) one
layer each of high lc(ab) and Ic (c). - . -
[0038] Figure 6 is a plot of critical current (Ic) versus magnetic field orientation
(0) at 75 K fof superconducting oxides of various.compositions, measured at 1T
and 3T.

• * *;<. - ! • . . •- -J - ■ ■
[0039] Figure 7 is a cross-sectional illustration of two HTS assemblies joined at
their respective substrates, in which a first assembly has a superconductor layer
having high lc(ab) and the second assembly has a second superconducting layer
having high lc(c). ■
[0040] .. Figure 8 is a cross-sectional illustration of a two HTS assemblies joined .
" at their respective;cap layers.'in-which a first assembly has a superconductor
layer having high lc(//ab) and the second assembly has a second superconducting
layer having high lc(//c).
[0041] Figure 9 is a cross-sectional illustration of two HTS assemblies joined at
. their respective substrates and surrounded by an electrically conductive structure.
[0042] Figure 10 is a pictorial illustration of a laminating process used to make
a laminated HTS wire according to one or. more embodiments of the present-,..;.. . . .
invention. . ■
[0043] - - Figure 11. illustrates a flow diagram of an exemplary process used to
manufacture an HTS wire according to one or more embodiments of the present
invention.
'[0044] " Figure" 12 is a plot of the critical current (Ic) versus magnetic'field ■
orientation (0) at 77 K and 1 Tesla of the HTS wire described in Example 3.
Detailed Description
[0045] Figure 3 shows a two-dimensional plot of the magnetic field distribution
aiouhd the end iurns 300 of a solenoid electromagnet 310, which demonstrates
that both the" field strength (H) (designated in arrows of different colors; where the
colors correspond to the field strengths shown in the side bar of Figure 3) and field
orientation (0.) (designated by arrtfw orieptation) vary dramatically at different
.locations j.n the.-ooil. Ah HTS wire that is optimized for electrical current carrying
properties in a particular magnetic field will exhibit different currents (Ic), and
henee different current densities (Jc), in different regions of the coil as each region
of thecoil experiences a magnetic field of different orientation. The Derformance

ofthe "coil is limited by the minimum performance of the wire. Thus, the overall
current of the wire is reduced throughout and the wire functions at only a fraction
of its current capacity over long lengths of the wire. If the current capacity can be'
increased for those underperforming regions of the wire, the current of the entire
wire as a whole can be improved.
[0046] 'RE1-23 superconducting oxide grains typically exhibit strong anisotropy
in a magnetic field, with the current in a magnetic field oriented in the (ab) plane of
the oxide grain (along the surface of an epitaxial HTS'layer) being much higher
than the current in a magnetic field oriented perpendicular to the Hf S layer.
Ic(ab) can be two times, three times, andeven'more than ten.times^greater than -
lc(c); and the a'nisotropy becomes more noted at higher magnetic field strength.
While certain HTS materials have been observed to reduce magnetic field
anisotropy; improvements in lc(c) are typically obtained at the expense of lc(ab).
[0047] In one aspect of the invention, an HTS wire operates at higher
percentage of the total current capacity than a conventional HTS wire. In one or
more embodiments, the HTS wire operates at near full current load. Current
carrying characteristics are improved by using HTS materials with different
performance characteristics in different regions of an NTS wire or device. The
HTS material is selected for optimal performance in the anticipated .local magnetic
field orientation. Thus, by way of example, an HTS wire includes two
superconducting layers that are selected to provide optimal performance in the
local applied magnetic field. The two layers may be arranged or stacked in any
order. In regions where the HTS wire experiences an applied magnetic field
oriented parallel to the plane of the superconductor layer (H//ab or G=90°), both
layers may contain a superconductor layer havinga'composition and structure •
that provides optimal current along H//ab, that is, le(ab)»lc(c). In regions where
the HTS wire experiences an applied magnetic field oriented perpendicular to .the .
. plane of the superconductor layer (H//e or 0-0°), both layers may contain a
superconductor layer having a composition and structure that provides optimal
current along H//c, that is, the Ic anisotropy is reduced to a desired level. In
reaions where the HTS wim eYnerienrps an annlierl mannptin fiplrf whn

orientation is intermediate to H//ab and H//c, a first layer may contain a
superconductor layer having a composition and structure,that provides optimal
current performance along H//ab, and a second layer may contain a
superconductor layer having a composition and structure that provides optimal
current along H//c. The relative thickness of the two layers is selected to provide
the desired-balance of lc(c) and lc(ab) performance. The HTS wires provide"ah
overall-critical current of a desired performance, e:g.-; a desired current load.-
[0048] In one or more embodiments, the HTS wire carries an overall lc(c) in at
' least,a portion of its length of at least 80A/cm-width; and lc(ab)/ lc(c) is greater "
.than 2.0, or-about 2-3; or lc(c) is about 120-150 A/cm-width and lc(ab)/ lc(c) is
""greater than 2.0 or about 2-3; or lc(c) is about 150-180 A/cm-width and lc(ab)/
lc(c) is greater than 2.0, or about 2-3. The overall lc(c) is attained by the additive
■ current performance of the two superconducting layers. Specifying a high lc(c)-
ensures that at least one of the layers performs well in a perpendicular magnetic
field. Specifying that lc(ab) be a multiple of lc(c) of 2 or more ensures that current
.- in a parallel field is even higher. The overall current performance may be attained
in a variety of combinations, such as combining two wires having moderate lc(c)
and moderate lc(ab). Alternatively, a wire of superior lc(c) can be combined with
a wire of poor lc(c), but good lc(a'b). ' :
[0049] In addition to providing the desired combination of high lc(ab)
superconductor layers and high lc(c) superconductor layers, the two layer HTS
wires increase critical current density over comparable single layer
superconductor wires by substantially doubling the volume of superconductor
material in the HTS wire.
[0050] In one or more embodiments, the^superconducting layers may be
coated on the same side of the substrate. Figure 4A illustrates a double layer
HTS wire 400 in which qnersupercohducting layer having optimal lc(ab) 440 and
one superconducting layer having optimal lc(c) 470 are coated on the same side
of the substrate 460. It should be noted that in this and all subsequent figures, the
dimensions are not to .scale. The substrate may be a textured metal substrate or

a metal substrate that includes a texYured substrate and is generally of a thickness
in the range of about 0.05 - 0.2 mm. A metal substrate, such as Ni, Ag, or Ni
alloys (e.g., NiW or other Hastalloy metals) provides flexibility for the wire and can
be fabricated over long lengths and large areas. The superconducting layer
comprises a material that is selected for its good performance in either H//ab or
H//c. In addition, the superconductor layer is crystallographically aligned so that
..the ab~ plane of the oxide superconductor is parallel to the wire surface: Each
superconducting layer is generally in the range of about 0.5 urn to about 2.0 urn,
and may be even greater. An HTS wire as illustrated in Figure 4A is typically
useful in a wire or region cf a wire experiencing a magnetic field of intermediate
orientation, thaf is, O°<0<9Oa.. ~ ■;'".... . '' ' :\ - '■
[0051] In regions of the wire where 0 is about 0°, a double layer HTS wire 410
., in which two superconducting layers 470 having optimal lc(c) are coated on the
same side'of the substrate 460 may be used, as Figure 4B illustrates. Figure 4C
illustrates a double layer HTS wire 420 in which two superconducting layers
having optimal lc(ab) 420 are coated on the same side of the substrate 460. The
HTS layer demonstrates an optimal performance in H//ab. In order to provide a
wire having optimal performance in a device experiencing different magnetic field
.orientations, a wire may include any one of these'architectures at different
locations in the device corresponding to different field orientations.
' [0052] In one or more embodiments, a conducting or insulating layer 490 may
be disposed between the first and second superconductor layers as illustrated for
HTS wire 430 in Figure 4D. Conductor layers provide electrical connection
between the two layers and can be, tor example, copper," and silver. Exemplary *
insulating layers include metal oxides suctvas Y2O3, CuO and CeO2- Any
interlayer should be structurally ancTchemically compatible with the HTS material
and have, for example, a textured crystalline structure that permits the deposition
.of an. epitaxial HTS Jayer. The interlayer thickness is generaHy in the" range of 20
nm to 200 nm, and is deposited, for example, by sputtering, evaporation
deposition or pulsed vapor deposition, or other conventional methods.-

[0053] In one or more embodiments, the superconductor layers are coated on
opposite sides of the substrate. Figure 5A illustrates a double layer HTS wire 520 ■
in which one superconducting layer'having optimal lc(//ab) 440 and one
superconducting layer having optimal lc(//c) 470 are coated on opposite sides of
the substrate 460. Figure 5B illustrates a double layer HTS wire 510 in which two
superconducting-layers 470 having optimal lc(//c) are coated on opposite sides .of •'
the .substrate 460.'~Figufe 5C.illustrates a double layer HTS wire 500 in which two •
superconducting layers having optimal lc(//ab) 440 are coated on opposite sides
of the substrate. Additional superconducting layers may be included on either
side of'the substrate and may enhance either lc(c) or lc(ab). '"
[0054] The HTS wires illustrated in Figures 4Ar4D and Figures 5A-5C.and
elsewhere in this description include one or more buffer layers {not shown)
disposed between the substrate and superconductor layer and one or more cap -
layers (not shown) overlaying the superconductor. In one or more embodiments,
the buffer layer is made up of an electrically insulating material, though electrically ■
conductive materials also can be used. The buffer layer is made up of, e.g., an -
. inert metal, an oxide, zirconate, titanate, niobate, nitride, tantalate, aluminate,
cuprate, manganate, or ruthenate of a metal or rare earth element (e.g. Al203,
CeO2] Y2Q3, MgO, Gd203, strontium titanate, gadolinium zirconate, yttria-
stabilized zirconia, AIN, Si3N4, LaMn04) La2Zr207, or La2-xCexZr207. The buffer
layers may be deposited using any known method, including physical and
chemical deposition methods. A cap layer overlays the superconducting layer and
•provides protection of the superconducting layer from chemical and mechanical
degradation. The cap layer may be conductive. The cap layer may be sputtered
Ag or other inert metal.
[0055] In one or more layers, superconducting materials having high lc(ab) or
high lc(c) are obtained by selective processing of the layers. In the examples
above, wherein the two Ruperoonrhiqtor.layers are deposited on the same
substrate, this can be accomplished by changing the processing conditions used
to form the superconductor during the process. Typically, reaction to form the
superconductor is initiated at the interface with the underlvina buffer laver and the

superconductor grows from that interface outward. Thus, changing conditions
midway in the process from those that favor a high lc(c) material to those that
favor a high lc(ab) material results in a layered structure with different current
carrying properties. Alternatively, the two superconductor layers can be
separately processed to optimize performance and joined after HTS formation.
- • •--£--
[0056]' "Exemplary superconducting materials.having good performance in .
H//ab include rare earth (RE)-alkaline earth-copper oxides in'which the metals are
substantially in stoichiometric proportions. Thus, by way of example, RE-123, in
which the rare earth, barium andcop'per are in substantially 1:2:3 proportions -
have been found to exhibit optimal current in magnetic fields oriented parallel to
the ab plane. An exemplary oxide superconductor is'YBa2Cu307.5.
[0057] Superconducting materials rich in copper or deficient in alkaline earth
;.metal also exhibit high lc(ab). In one or-more embodiments, the'superconducting - •
oxide is a rare earth barium copper oxide in which the copper to barium ratio is
greater than 1.5. The Cu:Ba ratio is achievedby reducing the amount of barium in.
the oxide superconductor, i.e., the proportion of barium is less than 2.0, or by
increasing the copper content, i.e., the proportion of copper is greater than 3.0, in
the RE-123 composition. In some embodiments, the oxide supeiconducior
contains an excess of copper, for example, up to 5% excess, or up to 10% excess
or up to 20% excess copper as compared to the amount of copper required to
prepare stoichiometric RE-123. In other embodiments, the oxide superconductor
contains an deficiency of barium, for example, up to 5% deficiency, or up to 10%
deficiency or up to. 20% deficiency of barium as compared to the amount of ■
copper required to prepare stoichiometric RE-123.
[0058] In one or more embodiments, a copper interlayer is used in whole or in
part to supply excess copper. For example, a copper layer is deposited as an
interlayer in between two superconductor layers in a double layer wire, as in.
Figures 4A-4D. During the necessary heat treatments to.form.the oxide
superconductor, copper diffuses into both superconductor layers 440, 470,
forming copper-rich HTS layers. Further information on the use of copper

interlayers in the processing of copper-rich HTS wires is found in co-pending and
commonly owned United States Patent Publication No. 2006-0094603, published
on May 4, 2006, and entitled "Thick Superconductor Films With Improved
Performance," the entire contents of which are incorporated by reference.
[0059] . In certain embodiments, increases in Cu concentration of up to 20%
excess Cu increase the lc(ab). .Figure 6-is a plot of critical current (Ic) versus
magnetic field orientation (0). 75K) for oxide superconductors of various
compositions. Curves 610 and 610' measure the current over a range of 0 at 1T
and 3T, respectively, for a Y-123 la.y.er containing 7.5%-excess copper. The
curves exhibit a strong maximum,at 90° (H//ab) and a minimum at 0° (H//c), thus
demonstrating the'optimal performance of this superconductor composition at
H//ab. Copper-rich Y-123 also exhibits a strong current anisotropy between H//ab
ahd'H//c, where the ratio of !c(ab) to lc(c) is about 2.4 at 1T and 6 at 3T. In one or
more embodiments, a high lc(c) superconductor has an lc(c) of greater 20-55
A/cm-width 65K at 3T and an lc(ab)/lc(c) ratio greater than 2.5,-or'greater than 3.5
or greater than 5.5 in a magnetic field of at least 1 Tesla. Such ratios have been
obtained for magnetic field strengths of up to 6 Tesla and it is anticipated that
such ratios may be appropriate in even higher magnetic fields.
[0060]'. Exemplary superconducting materials having good performance in H//c
include rare earth (RE)-alkaline earth-copper oxides containing an excess of rare
earth element or two or more rare earth elements in stoichiometric proportions or
in excess of stoichiometric proportions. Without being bound by any particular
mode of operation, the excess rare earth is believed to improve lc(c) by forming
nanoscale defects that serve as flux pinning centers. Atomistic defects maybe
achieved by introducingdifferent rare earth elements into the Y-123
superconductor. In one or more embodiments, up to about 25% addition-to, for
example, a yttrium-containing composition, or up to about 150% substitution of a
, rare'earth element is'contemplated. In one or more embodiments, the rare earth
element is holmium and/or erbium. Introduction of two or more rare earths into
the oxide superconductor layer not only increases lc(c), but it also decreases the
difference (anisotropy) between lc(ab) and lc(c). Referrina to Fiaure 6 curves

620 and 620' measure the current over a range of 0 at 1T and 3T, respectively,
for a Y-123 layer containing 25% erbium addition to the superconductor
composition, e.g., Y:Er = 4:1. Curves 630 and 630' measure the current over a
range of magnetic field orientations at 1T and 3T, respectively, for a Y-123 layer
containing 50% additional erbium, e.g., Y:Er= 2:1. The critical current at 90°
:(H//ab) has decreased significantly, whilethe.critical current at 0° (H//c) has
- increased,;thus demonstrating that the composition of the superconducting layers
can be selected to improve the critical current at H//c, in absolute terms, as well as
to reduce the current anisotropy between lc(ab) and lc(c). The ratio of lc(ab) to
lc(c) for the 25% erbium-supplemented Y-123 is about 1.8 at 1T and 2.6 at 3T,
while-the ratio of H//ab to H//c for'the 50% erbium-supplemenfecfY-123 is-about
1.2 at 1T and 1.6 at 3T. This is considerably less than the current anisotropy of a
high lc(ab) wire. Compare, lc(ab)/lc(c) of 2.4 (1T) and 6.0 (3T) for copper-rich Y-
123. I'ri one or more'embbdiments, a high lc(c) superconductor layer has an
lc(ab)/lc(c) ratio of less than 2.6, or less than 2.0 or less than 1,5'in a-magnetic
field of at least 1 Tesla. Such ratios have been obtained for magnetic field
strengths of up to 6 Tesla and it is anticipated that such ratios may be appropriate
in even higher magnetic fields.
[0061] . In one or more embodiments, (he high lc(c) superconductor material
includes a second phase nanoparticle within the grain of the oxide
superconductor. The nanoparticle is made up of a metal-containing compound
and may contain one or more of rare earth element, an alkaline earth metal, and a
transition metal. The second phase nanoparticle may be one or more of
zirconium oxide, aluminum oxide, Y2Cu205, Y2BaCu04, magnesium oxide,
BaZrO3, silver and CeO2. Other compositions suitable for forming nanometer-
sized defects in the oxide superconductor grains to pin flux lines and improve
eurrent carrying properties in a magnetic field are found in co-pending and
commonly owned application United States.Serial No. 10/758,710, filed'January
16, 2005, and entitled "Oxide Films with Nanodot Flux Pinning Centers," the
entirety of which is incorporated by reference.

[0062] In one or more embodiments, the thickness of the high lc(ab) and high
lc(c) layers may be selected to provide a preselected performance in a magnetic
field orientation. Thus, by way of example, to make a tape or wire most suitable to
perform in a magnetic field with orientation 45 degrees to the tape surface, one
can use both a high lc(c) superconductor layer and a high lc(ab) superconductor
layer, where the lc(c) layer is thinner relative to the Icfahjjayej based on data
.sucfras is presented in Figure .6. The relative thickness of the two layers can be
adjusted to obtain, for example, lc(c) > 80 A/cm-width and lc(ab)/lc(c) of greater
than 2, or lc(c) > 120-150 A/cm-width and lc(ab)/lc(c) of greater than 2, or lc(c) >
150-180 A/cm-width and lc(ab)/lc(c) 6F.2-3.
[0063] • In one or more embodiments, the superconductor layers are deposited-
by metal organic deposition (MOD). A precursor solution containing the
constituent elements of the first.oxide superconductor layer is deposited and the--
precursor layer is decomposed into an intermediate metaloxy; layer before
application of the second superconductor layer. A second precursor solution
containing the constituent metallic elements of the second oxide superconductor
layer is then deposited and decomposed into an intermediate metaloxy layer. The
two intermediate layers are then fully converted into an HTS layer. By way of
■example, the precursor solutions may include metal salts including fluoride, and
the precursor may be decomposed to form an intermediate metal oxyfluoride
layer. The metal oxyfluoride layer may be further heat treated to form an oxide
superconductor. In other embodiments, the first precursor layer is deposited and
fully converted into an oxide superconductor layer. The second precursor layer is
then deposited and also fully converted into an oxide superconductor, layer. Each
superconductor layer can be a thickness of about 0.6 um to about t.5um, or even .
greater. The total thickness of the superconducting layers can range from about
0:6*'um to about 2.0 um and generally does not exceed about 3 um.
[0Q64] in other embodiments, each superconducting layer is deposited on a
separate substrate, i.e., an HTS assembly. The coated substrates are then joined
to form an HTS wire containing two substrate/superconductor layer'assemblies.
As usedherein. the exDression "HT.9 aiipmhiu" inHJooiao ^ mi.w;i.-.w~.- ~*-..~»—

including a subsirate, one or more buffer layers, a superconductor layer, and one
or more cap layers.
[0065]- The HTS assemblies may be joined at their respective substrates, so
that the capped superconductor layers face outward, as illustrated in Figure 7.
HTS wire 700 is made up of two HTS assemblies 710 and 720. Each of these
assemblies"^ fabricated.using techniques known.in the.art and that are..describe,d
in greater detail herein. Assembly 710 includes a metal substrate 760. Substrate
760 contains at least a biaxially textured surface to provide a crystal template for
buffer layer 750 and HTS layer 740. Buffer layer 750 overlays substrate 760 and
may comprise one or more layers. HTS layer 740 overlays.buffer_layer,.750 may
be any HTS material. In one or more embodiments, the HTS layer.includes a rare
earth-alkaline earth-copper oxide, suchas Y-123, that is optimized for
performance in" either H//ab or H//c. Cap layer 730 is located above HTS layer
740 and provides protection of the HTS layer from chemical and mechanical
degradation. Insert 720' may have the identical or similar structure, including
substrate 760', buffer layer 750,', HTS layer740', and cap layer 730'. In the
embodiment illustrated in Figure 7, superconductor layer 740 is shown as a high
lc(c) superconductor material and superconductor layer 740' is shown as a high
lc(ab) material, however, it is readily>apparent that both superconductor layers
may be high lc(ab) material or high lc(c) material.
[0066] Adhesive 780 bonds assembly 710 to assembly 720 at their respective
substrates, creating HTS assembly 700. Cap layers 730 and 730' face outward in
assembly 700, and substrates 760 and 760' are internally located in assembly •
700. This configuration provides, for example, efficient electrical contact with an
external current.source and efficient joining of lengths of superconductor wire. The
outer surfaces of the assembly are electrically conductive cap layers 730 and
7\3Qj,^These layers provide convenient electrically conductive paths to respective
HTS .layers 7A0 and 740'. In order to introducecurrent into the I ITS layers, a" '
connection between the current source and the assembly can be made anywhere
on the outer surface of the assembly.

[0067] In order to facilitate bonding between HTS assemblies 710 and 720,
wetting layers, e.g., Ag or Cu, (not shown) can optionally be coated onto
substrates 760 and 760'. These wetting layers facilitate the bonding of each
assembly to adhesive layer 780, and therefore facilitate the bonding of each
assembly to the other. In one or more embodiments, adhesive layer 780 is made
of sdlderra resin, epoxy, or other non -conductive material. An exemplary solder.
is'Pb-Sn-Ag. During processing, the back surfaces of the metallic substrates {I.e.
the surfaces that do not face the buffer layer) may grow a native oxide layer,
which is an electrical insulator. This oxide layer typically does not wet solder, i.e.
" does not bond to solder. The addition of Ag wetting layers to substrates 760 arid
760' makes the'Back'surface wettable, i.e. bondable, to solder-adhesive layer 780.
Thus, bonding can be accomplished by soldering wetting layers that are bonded
to the native oxide surfaces of the substrates.
[0068] In applications where good electrical contact between the substrates is
"•desired, the electrically insulating native oxide layers on substrates 760 and 760'
may be first removed. This removal can be done, e.g., by etching, electro-
polishing, sputtering, or shot blasting. Then metallic wetting layers, e.g., Ag or Cu,
are coated onto the respective back surfaces of substrates 760 and 760' to
prevent the reg'rowth of the native oxide orr the. substrate surfaces. Rigorous
removal of the native oxide layer is not required, however, in order to provide an
HTS wire according to one or more embodiments of the present invention.
Further detail on HTS assemblies for use in one or more embodiments of the
present invention may be found in co-pending and commonly owned U.S. Patent
Application No. 11/193,262,filed.on July 29, 2005, and entitled "Architecture For.
High'Temperature Superconductor Wire," the context of which is incorporated in ■
its entirety by reference.
[0069] In another embodiment of the present invention, the. HTS assemblies
may bs joined at their ,xGp£ctiv&ct.p layers, so that the capped supercorfductor
layers face inward, as illustrated in Figure 8. HTS wire 800 is made up of two
HTS assemblies 810 and 820. Each of these assemblies is fabricated using
technim IfiS knrn/wn in tho art anri ic rtoc^rihaH in nmiloi' Hninil k^J^... A»^n™ui,,

810 includes a metal substrate 830. Substrate 830 contains at least a biaxially
textured surface to provide a crystal template for buffer layer 840 and HTS layer
850: Buffer layer 840 overlays substrate 830 and may comprise one or more
layers. HTS layer 850 overlays buffer layer 840 may be any HTS material. In one
or more embodiments, the HTS layer includes a rare earth-alkaline earth-copper
oxide, such as.Y-123, that isoptimized for performance, at either H//ab or H//c.
Cap layer 860 is located ab~6ve*HTS layer 850 and provides protection of the HTS
layer from chemical and mechanical degradation. Insert 820 may have the
identical or similar structure, including substrate 830', buffer layer 840', HTS layer
850', and cap layer 860'. In the embodiment illustrated in Figure 8,
superconductor layer 840 is sh'own'as a high lc(c) supefconductor'material and
superconductor layer 840' is shown as a high lc(ab) material, however, it is readily
apparent that both superconductor layers may be high lc(ab) material or high lc(c)
material. The individual HTS assemblies are joined at cap layers 860, 860' using
one of a variety of methods. For example, exemplary joining techniques include ■ •
soldering and diffusion bonding. 'An exemplary solder layer 880 is shown in
Figure 8 joinihgthe two HTS assemblies 810, 820. Further information regarding
HTS assemblies is found in commonly owned U.S. Patent No. 6,828,507, which is
incorporated in its entiretv by reference. . - .-..■-
[0070] . In one or more embodiments, the electrical stability of the two
superconductor layer HTS wires is further enhanced by surrounding the
superconductor wire, e.g., such as the wire shown in Figures 7 and 8, with an
• electrically conductive structure 900, as is illustrated in Figure 9. The electrically
conductive structure allows current transport from one superconductor layer to
another. This provides a redundant current path, thereby improving the stability of
the wire to quenching and reducing the sensitivity of the,wire to local defects and
variations in performance. The.electrically conductive structure may include
upper and lower conductive strips 910, 910' in electrical contact with HTS
assemblies 7Ytf arid 720. A substantially nonporous electrically conductive filler
920, 920' extends between the first and second conductive strips along the sides
of the superconductor wire assembly to isolate the HTS assemblies from the

environment and to provide electrical connectivity between the two
• superconductor layers and to an external electrical connection.
[0071] In wire 900, filler 920, 920' provides electrical communication between ■
the HTS assemblies 710, 720. In essence filler 920, 920' behaves as a
conductive conduit, or bridge. Though filler 920, 920' is conductive, as current
' "flows.through-wire 900, the current will generally follow the path ofJea'st
resistance, which is through one or both HTS assemblies 710, 720. The presence
of redundant electrical pathways for the current improves the electrical stability of
the wire and increases the current-carrying capacity of wire.900 over that of a
single assembly or two isolated assemblies. Lastlyr.filler 920, 920' provides.a .
means to introduce electrical current into one or both of HTS assemblies 710;
720. By simply contacting a current source to filler 920, 920', current flows via the
filler into the HTS assemblies?- Because filler 920, 920' is in contact with
conductive stabilizer strips 910, 910', contacting a current source to one or both of
strips 910, 910' also introduces current to one or both of HTS assemblies 710, "
720. - .;-'-- .. -■•."■■ '• '
[0072] Material 920, 920' is selected such that it is nonporous, has sufficient
strength and is coatable to a sufficient thickness to substantiaiiy surround arid seal-
wire 900: The thick coating of filler 920, 920' on the sides of wire 900 also adds
mechanical strength to the wire and may help to prevent delamination of wire 900
• due to bending or other sources of potential damage. Material 920, 920' adds
thermal stability to the wire by providing additional heat capacity. In one or more
embodiments, the wire has sufficient filler width to meet the mechanical strength
and durability requirements of wire 900, but not much more. A typical individual
filler width ranges from 0.025-0.2 mm, but can be higher or lower (e.g. 0.005-1.
■ mm).
[0073] ; Stabilizer strips 910 and 910' further enhance the mechanical, electrical,-
and thermal stability of wire 900. Strips 910,910' can be the same or different,
depending upon the desired characteristics of the resulting wire. The thickness of
the strips can be varied throughout a wide range of about 0.01-2 mm, depending

upon the desired application, e.g., between 0.05-0.075 mm, to as high as or
higher than 1 mm. Strips 910 and 910' are generally a flexible conductive
material, e.g. metal, e.g. aluminum, copper, silver, nickel, iron, stainless steel,
aluminum alloy, copper alloy, silver alloy, nickel alloy, nickel tungsten alloy, or iron
alloy. For most applications, a high conductivity metal such as copper is
preferred. For a fault current,limiter application, a mechanically strong, high ' ■ -■
resistivity alloy such as.stainless steel is preferred. 'r
[0074] In some embodiments, stabilizer strips 910 and 910' have a width that is
greater than the width of HTS assemblies 710.and" 720. This excess width, or
overhang, allows: layers or fillets of filler 920, 920' to form along the sides of the.
.wire by capillary action. Generally, the width of strips 910, 910' fall within the
range of 0.01-2 mm greater than the width of HTS assemblies 710, 720. For
example, stabilizer strip's with a width of about 4.3 mm can be used with 4.0 of 4.-1 •
mm.wide superconducting inserts.
,.[0075] - HTS wire, e.g., wire 1000~may.be manufactured as illustrated in FIG.
■10. *HTS wire assemblies are fabricated as wide (e.g. about 4 to 10 cm wide)'
multilayer strips and then slit lengthwise into several narrow (e.g. about 10 strips
of about 0.4 cm wide, from a 4 err, wide strip) strips, which form HTS assemblies
1010,1020. See Step 1190 of Figure 11. Conductive stabilizer strips 1060, 1060'
may be wider than the width of the narrow HTS strip, so that the stabilizer strips
overhang the HTS strip on both sides. After slitting, the wire is formed by joining
harrow HTS insert strips 1010, 1020 with stabilizer strips 1060, 1060' in a bath
1000 of filler material. Multilayer HTS inserts 1010, 1020, for example, may be
fed into the filler bath tram reels 1010, 1010'. Stabilizer strips 1060, 1060' maybe
' fed off reels 1020, 1020'placed above and below the feed-in reels 1010, 1010'of
HTS 1010, 1020 so that the lengths of material form a stacked configuration. The
filler simultaneously surrounds and HTS assemblies 1010, 1020 and also-
. IgrrTinates th^m fn the conductive stabilizer strips 1060, 1060'. Die 1030 merges
■ and consolidates inserts 1010,1020 and stabilizer strips 1060, 1060' into one
superconducting wire 1000. By laminating the stabilizer strips to the wire after
faioricatina and slittinn rhf» HTS inserts thA stahiliror ctrinc ran oociiw ho maria

wider than the inserts. The overhanging feature promotes the capillary wicking of
the solder between the upper and lower stabilizer strips 1060, 1060' to provide
thick, mechanically robust fillets of filler on the sides of the wire.
[0076] Further detail on electrically conductive structures for use with one or
more embodiments of the HTS wires of the present invention may be found in.co-
" pending and commonly owned United States Patent Application No. 11/193,262,
filed on July 29, 2005, and entitled "Architecture For High Temperature
Superconductor Wire," the contents of which are incorporated in their entirety by
reference. "' ■-'•■•'"
[0077] Wires having different performance characteristics can be joined end-to-
end to obtain an HTS wire that varies in performance along its length. This is
facilitated by use of the HTS wires having an electrically conductive outer
structure that provides electrical contact with the oxide superconductor layer,-such
as is illustrated in Figure 9. ". ' ' .
[0078] HTS wires such as described herein may be used in electromagnetic
coils or windings. Thus, the HTS wire is wound to form a coil such that the HTS
wire in the region of the coil experiencing a magnetic field with a strong H//ab .
component is made up of HTS wire having a high lc(ab). Similarly; the HTS wire
in the region of the coil experiencing a magnetic field with a strong H//c
component is made up of HTS wire having a high lc(c) and optionally, a desired
ratio lc(ab)/lc(c). Regions of the coil experiencing magnetic field of intermediate
orientation are made up from HTS wires having a desired combination of high
lc(ab) and high !c(c) superconducting layers to obtain a desired lc(c) and
optionally, a desired ratio lc(ab)/lc(c).- In addition,'the thicknesses of the two.
layers may be selected to obtain the desired combination of current density
parallel to and perpendicular to the tape surface.
■ [GG79] Fiy: '11 illustrates a.flow diagram of an exemplary process used to
manufacture an HTS wire according to various embodiments of the present
invention. At a first station 1110, a wire substrate is treated to obtain biaxial

crystailographic orientation. For'example, the surface can.be a biaxially textured,
surface (e.g., a (113)[211] surface) or a cube textured surface (e.g., a (100)[011]
surface or a (100)[001] surface). Preferably, the peaks in an X-ray diffraction pole
figure of the surface have a FWHM of less than about 20° (e.g., less than about
15°, less than about 10°, or from about 5° to about 10°).
• .[0080] The surface can be prepared, for-example, by rolling arid annealing, .
Surfaces can also be prepared using vacuum processes, such as ion beam
assisted deposition, inclined substrate deposition and other vacuum techniques
known in the art to form a biaxially textured surface on, for example, a randomly
oriented polycrystalline or amorphous surface. In certain embodiments (e.g.,
when ion beam assisted deposition is used), the surface of the substrate need not
be textured (e.g., the surface can be randomly oriented polycrystalline, or the
■surface can be amorphous). • ■ - •
[0081] The substrate can be formed of any material capable of supporting a .'"
buffer layer stack and/or a layer of superconductor material, and capable of
providing the mechanical properties required for the final wire. Examples of
substrate materials that can be used as the substrate include for example, metals
-and/or alloys, such as nickel; silver, copper, zinc, aluminum, iron; chromium,
vanadium, palladium, molybdenum and/or their alloys. In some embodiments, the
■ substrate can be formed of a superalloy. In certain embodiments, the substrate
can be in the form of an object having a relatively large surface area (e.g., a wire
or a wafer). In these embodiments; the substrate is preferably formed of a
relatively flexible material.
[0082] In-some of these embodiments,-the substrate is a binary alloy that . -■'•■ •--'
contains two of the following metals: copper, nickel, chromium, vanadium,
aluminum, silver, iron, palladium, molybdenum, tungsten, gold and zinc. For
example, a binary alloy can be formed of nickel and chromium (e.g., nickel arid at
most 20 atomic percent chromium, nickel and from about five to about 18 atomic
percent chromium, or nickel and from about 10 to about 15 atomic percent
chromium). As another example, a binary alloy can be formed of nickel and

copper (e.g., copper and from about five to about 45 atomic percent nickel, copper
and from about 10 to about 40 atomic percent nickel, or copper and from about 25
to about 35 atomic percent nickel). As a further example, a binary alloy can
contain nickel and tungsten (e.g., from about one atomic percent tungsten to
about 20 atomic percent tungsten, from about two atomic percent tungsten to
about 10 atomic percent tungsten, from about three atomic percent'tungsten to'
'about seven atomic percent tungsten, about five atomic percent tungsten). A
binary alloy can further include relatively small amounts of impurities (e.g., less
than about 0.1 atomic percent of impurities, less than about 0.01 atomic percent of
impurities* or less than about 0.005 atomic percent of impurities). Ni-5wt.%W is a
. preferred material for the substrate. .', . "' '...;*
[0083] In certain of these embodiments, the substrate contains more than two
metals (e.g., a ternary alloy or a quarternary alloy). In some of these -
embodiments, the alloy can contain 6ne or more oxide formers (e.g., Mg, Al, Mo,
V,Ta, Ti, Cr, Ga, Ge, Zr, Hf, Y, Si, Pr, Eu, Gd, Tb, Dy, Ho, Lu, Th, Er, Tm, Be, Ce,
Nd, Sm, Yb and/or La,, with Al being the preferred oxide former), as*well as two of
the following metals: copper, nickel, chromium, tungsten, vanadium, aluminum,
silver, iron, palladium, molybdenum, gold and zinc. In certain of these
embodiments, the alloy can contain two of the following metals: copper, nickel,
chromium, tungsten, vanadium, aluminum, silver, iron, palladium, molybdenum,
gold and zinc, and can be substantially devoid of any of the aforementioned oxide
formers.
[0084] In embodiments in which the alloys contain an oxide former, the alloys
can contain at ieast aodut U.5 atomic percent oxide former (e.g., at least about
one atomic percent oxide former, or at least aboui4wo atomic percent oxide
former) and at most about 25 atomic percent oxide former (e.g., at most about 10
-atomic percent oxide former, or at most about four atomic percent oxide former).
For example, the .ai.lny ran include an oxide former (e.g., at least about 0.5
aluminum), from about 25 atomic percent to about 55 atomic percent nickel (e.g.,
from about 35 atomic percent to about 55 atomic percent nickel, or from about 40
atomic percent to about 55 atomic rjercent nicked with the halannp hpinn r.nnnor

As another example, the alloy can include an oxide former (e.g., at least about 0.5
■ atomic aluminum), from about five atomic percent to about 20 atomic percent .
chromium (e.g., from about 10 atomic percent to about 18 atomic percent
chromium, or from about 10 atomic percent to about 15 atomic percent chromium)
with the balance being nickel. The alloys can include relatively small amounts of
additional metals (e.g.,' less than about 0.1 atomic percent of_additional metals, .
'ess than about 0.01 atomic percent of additional metals, or icss "than about 0.005
atomic percent of additional metals).
[0085] A substrate formed of an alloy can be produced by, for example, •
combining the constituents.in powder form, melting and cooling or, for example, by -
diffusing thepowder constituents together in solid state. The alloy can then be
formed by deformation texturing (e.g., annealing and rolling, swaging, extrusion
and/or drawing) to form a textured surface (e.g., biaxially textured or cube
textured). Alternatively, the alloy constituents can be stacked in a jelly roll
configuration, and then deformation textured. In some embodiments, a material
with a relatively low coefficient of thermal expansion (e.g., Nb, Mo, Ta, V, Cr, Zr,
Pd, Sb, NbTi, an intermetallic such as NiAl or NiaAl, or mixtures thereof) can be
formed into a rod and embedded into the alloy prior to deformation texturing.
. [0086] In some embodiments, stable oxide formation at the surface can be
mitigated until a first epitaxial (for example, buffer) layer is formed on the biaxially
textured alloy surface, using an intermediate layer disposed on the surface of the
substrate. Intermediate layers include those epitaxial metal or alloy layers that do
not form surface oxides when exposed to conditions as established by R02 and
■temperature required for the initial growth of epitaxial buffer layer films. In
addition, the buffer layer acts' as a barrier to prevent substrate element(s) from'
-migrating to the surface of the intermediate layer_and forming oxides during the
initial growth of the epitaxial layer. Absent such an intermediate layer, one. or ■,
more-elements in the substrate would be expected.to form thermodynarnieaiiy ■ '
stable oxide(s) at the substrate surface which could significantly impede the
deposition of epitaxial layers due to, for example, lack of texture in this oxide layer.

[0087] Exemplary intermediate metal layers include nickel, gold, silver,
palladium, and alloys thereof. Additional metals or alloys may include alloys of
nickel and/or copper. Epitaxial films or layers deposited on an intermediate layer
can include metal oxides', chalcogenides, halides, and nitrides. In some
embodiments, the intermediate metal layer does not oxidize under epitaxial film
deposition conditions: ' - ■ ' :
[0088] Care should be taken that the deposited intermediate layer is not
completely incorporated into or does not completely diffuse into the substrate
before nucleation and growth of the initial buffer layer structure causes the
epitaxial.layer to be established. This means that after selecting the metal (or
alloy) for proper attributes such as diffusion constant in the substrate alloy,
thermodynamic stability against oxidation under practical epitaxial buffer layer
growth conditions,and lattice matching with the epitaxial layer, the thickness of the "
deposited metal layer has to be adapted to the epitaxial layer deposition
■conditions, in particular to temperature.
[0089] Deposition of the intermediate metal layer can be done in a vacuum "
process such as evaporation or sputtering, or by electro-chemical means such as
electroplating (with or without electrodes-). These deposited intermediate metal ;
layers may or may not be epitaxial after deposition (depending on substrate .
temperature during deposition), but epitaxial orientation can subsequently be
obtained during a post-deposition heat treatment.
' [0090] In certain embodiments, sulfur can be formed on the surface of the
substrate or intermediate layer. The sulfur can be formed, for example, by
exposing the intermediate Jayerto a.gas environment containing a source of sulfur
(e.g., H2S, a tantalum foil or a silver foil) and hydrogen (e.g., hydrogen, or a mix of
hydrogen and an inert gas, such as a 5% hydrogen/argon gas mixture) for a
period of time (e.g., from about 10 seconds to about one hour, from about one
minute to about 30 minutes, from about five minutes to about 15 minutes). This
can be performed at elevated temperature (e.g., at a temperature of from about
450°C to about i 100°C, from about 600°C to about 900oC, 850°C). The pressure

of the hydrogen (or hydrogen/inert gas mixture) can be relatively low (e.g., less
than about one torr, less than about 1x10~3 torr, less than about 1x10"6 torr) or
relatively high (e.g., greater than about 1 torr, greater than about 100 torr, greater
than about 760 torr).
[0091] Without wishing to be bound by theory, it is believed that exposing the .
lextured.substrate surface fo a.source of sulfur under these conditions can result
in the formation of a superstructure (e.g., a c(2x2) superstructure) of sulfur on the
textured substrate surface. It is further believed that the superstructure can be
effective in stabilizing (e.g., chemically and/or physically stabilizing) the surface of
the intermediate layer. ■ - "-- - - -
[0092] While one approach to forming a sulfur superstructure has been
described, other methods of forming such superstructures can also be used. For
. example, a sulfur superstructure (e.g., S c(2x2)) can be formed by applying an
appropriafe'organic solution to the surface of the intermediate layer by heating to.
an appropriate temperature in an appropriate-gas environment. Moreover,.while,
formation of a sulfur superstructure on the surface of the intermediate layer has
been described, it is believed that other superstructures may also be effective in
stabilizing (e.g., chemically and/or physically stabilising) the surface. For
example, it is believed that an oxygen superstructure, a nitrogen superstructure, a
carbon superstructure, a potassium superstructure, a cesium superstructure, a
lithium superstructure or a selenium superstructure disposed on the surface may
be effective in enhancing the stability of the surface.
[0093] In a second processing station 1120, one or mere buffer layers are -
foffhed on the textured substrate by epitaxial growth on a textured metal.surface.
Alternatively, a buffer layer can be formed on a polycrystalline, randomly textured
metal surface using ion beam assisted deposition (IBAD). In this technique, a .
buffer layer material is evaporated using, for example, electron beam evaporation,
sputtering deposition, or pulsed laser deposition while an ion beam (e.g., an argon
ion beam) is directed at a smooth amorphous surface of a substrate onto which
the evaporated buffer layer material is deposited.

[0094] For example, the buffer laye'r can be formed by ion beam assisted
deposition by evaporating a buffer layer material having a rock-salt like structure
(e.g., a material having a rock salt structure, such as an oxide, including MgO, or
a nitride) onto a smooth, amorphous surface (e.g., a surface having a root mean
square roughness of less than about 100 Angstroms) of a substrate so that the
buffer layer material has a'surface with substantial alignment (e.g., about .13° or- .
less)., both in-plane and out-6f-plane.. ' :
[0095] The conditions used during deposition of the buffer layer material can
include, for example, a substrate temperature of from about 0°C to. about750°C
(e.g., from about 0°C to about 400°C, fromabout room temperature to.about - -
750°C, from about room temperature to about 400°C), a deposition fate of from
about 1.0 Angstrom per second to about 4.4 Angstroms per second, an ion energy
of from about 200 eV to about 1200 eV, and/or an ion flux of from about 110
microamperes pers'quare centimeter to about 120 microamperes per square
centimeter "-
[0096] In some embodiments, when using IBAD, the substrate is formed of a
material having a polycrystalline, non-amorphous'base structure (e.g., a metal
■ alley, such, as a nickel alloy) with a smooth amorphous sun'ace'formed of a ,•"
. different material (e.g., Si3N4).
[0097] In certain embodiments, a plurality of buffer layers can be deposited by
epitaxial growth on an original IBAD surface. Each buffer layer can have
substantial alignment (e.g., about 13° or less), both in-plane and out-of-plane.
[0098] A buffer material can be prepared using solution phase techniques,
including metalorganic-deposition, such as disclosed in, for example, S.S: Shoup
et al., J. Am. Ger. Soc, vol. 81, 3019; D. Bea'ch et al., Mat. Res. Soc. Symp. Proa,
vol! 495, 263 (1988); M. Paranthaman et al., Superconductor Sci. Tech.; vol. 12,
■313 (1993), D.J. Lee et al., Japanese J. Appl. Phys., vol. 38, L1/8 (iyyy) and fi/l.
W. Rupich et al., I.E.E.E. Trans, on Appl. Supercon. vol. 9, 1527. In certain
1 embodiments, solution coating processes can be used for epitaxial deposition of

Ihey can"be particularly applicable for deposition of the initial (seed) layer on a
textured metal substrate. The role of the seed layer is to provide 1) protection of
the substrate from oxidation during deposition of the next oxide layer when carried
out in an oxidizing atmosphere relative to the substrate (for example, magnetron
sputter deposition of yttria-stabilized zirconia from an oxide target); and 2) an
, epitaxial template for growth of subsequent oxide layers. In order to meet these,, •
requirements, 'the seed layer should grow epitaxial!y*overthe entire surface of trie
metal substrate and be free of any contaminants that may interfere with the
deposition of subsequent epitaxial oxide layers.
£0099] The,.fprrnatig_n of.pxjde" buffer layers can be carried out so'as to promote- ~
wetting of an underlying substrate layer. Additionally, in particular embodiments,
the formation of metal oxide layers can be carried out using metalalkoxide
. precursors (for example,-'.'sol gel" precursors).
[0100] Once the textured substrate including buffer layers is prepared, a
precursor solution is deposited at deposition station 1130 as described above. •_ . -
Optionally, the precursor can be patterned. Additional equipment may be required
to accomplish the patterning operation, for example, when laser ablation or ion
bombardment are used to-paMern.thc'superconducting layer. If dropwise' ■ ""
patterned deposition is used, then a single station equipped with a inkjet printer
deposition apparatus can accomplish-both deposition and patterning of the oxide
precursor solution.
[0101] Typically, solution chemistry is used to prepare barium fluoride and/or
other superconductor precursors: and a solution (e.g., a solution containing metal
salts, such as yttrium acetate, yttrium trifluoroacetate (Y-TFA), copper acetate, ..
' Barium acetate and/or a fluorinated.salt of barium) is disposed on a surface (e.g.,
on a surface of a substrate, such as a substrate having an alloy layer with one or
more buffer layers disposed thereon). The solution can be disposed on the
surface using standard techniques (e.g., spin coating, dip coating, slot coating).
The solution is dried to remove at least some of the organic compounds present in
the solution (e.g., dried at about room temperature or under mild heat), and the

resulting material is reacted (e.g., decomposed) in a furnace in a gas environment
containing oxygen and water to form barium fluoride and/or other appropriate
materials (e.g., CuO and/or Y203). in some embodiments, the reactors noted
above can be used in any or all of these steps.
[0102] Metal salt solutions are prepared using metal sources in the
appropriate proportions desired in the resulting superconductor layer. .Thus, for
example, an addition amount of copper salt, in excess of the stoichiometric
proportions used in Y-123, is included in a precursor solution used to prepare a
high lc(ab) superconductor layer having excess copper. Similarly, the precursor
_ solution' may contain additive components, including soluble, and insoluble metal
compounds, that are used to modify .the final superconductor composition. Such
additives can include, for example, soluble compounds of metal compounds such
as yttrium, neodymium, samarium, europium, gadolinium, terbium, dysprosium,
holmium, erbium, thulium, ytterbium, and lutetium, alkaline earth metals, such as
calcium, barium and strontium, transition metals, such as scandium, titanium,
vanadium, chromium, manganese, iron, cobalt, nickel and zirconium, cerium,
silver, aluminum, and magnesium that are capable of dissolving in the solvents
contained in the precursor solution. Additive components may also include
stoichiometric excesses of soluble compounds included in the precursor solution.
For example, soluble yttrium salts or soluble copper salts may be included in the
precursor solution in excess of that required to form Y123. Insoluble additive
components can also be added to the precursor solution.
[0103] Examples of metal salt solutions that can be used are as follows.
[0104] In some embodiments, the metal salt solution can have a relatively
smalfamount of free acid. In aqueous solutions, this can correspond to a metal
salt solution with a relatively neutral pH (e.g., neither strongly acidic nor strongly
basic). The.metal.salt solution can be used to prepare multi-layer
superconductors using a wide variety of materials that can be used as the
underlying layer on which the superconductor layer is formed.

[0105] The total free acid concentration of the metal salt solution can be less
than about 1x10'3 molar (e.g., less than about 1x10"5 molar or about 1x10"7 molar).
Examples of free acids that can be contained in a metal salt solution include
trifluoroacetic acid, acetic acid, nitric acid, sulfuric acid, acids of iodides, acids of
bromides and acids of sulfates.
[0106]--" When themetal salt solution .contains water, the.precurso.r composition "
can have a pH of at least about 3 (e.g., at least about 5 or about 7).
[0107] In some embodiments, the metal salt solution can^have.a. relatively low
water content (e.g., less than about 50 volurne percent watery less-than about 35
. volume percent water, less-than'about 25ivolume percent water).
[0108] In embodiments in which the metal salt solution contains trifluoroacetate
ion and an ajkaline earth metal-cation (e.g., barium), the-total amount of
trifluoroacetate ion canbe selected so that the mole ratio of fluorine contained in
the metal salt solution (e.g., in the form of trifluoroacetate) to the alkaline earth
metal (e.g., barium ions) contained in the metal salt solution is at least about 2:1-
(e.g., from about 2:1 to about 18.5:1, or from about 2:1 to about 10:1).
[010.9] ' In general, the metai sail solution can be prepared by combining soluble
compounds of a first metal (e.g., copper), a second metal (e.g., an alkaline earth
metal), and a rare earth metal with one or more desired solvents and optionally
water. As used herein, "soluble compounds" of the first, second and rare earth
metals refer to compounds of these metals that are capable of dissolving in the
solvent(s) contained in the metal salt solution. Such compounds include, for
- example, salts (e.g., nitrates, acetates, alkoxides, iodides, sulfates and
trifluoroacetates), oxides and hydroxides of these metals.
[011.0] In certain embodiments, a metal salt solution can be formed of an
organic solution containing metal trifluoroacetates prepared from powders'of.~.:.
Ba(02CCH3)2l Y(02CCH3)3,and Cu(02CCH3)2 which are combined and reacted
using methods known to those skilled in the art. For example, the metal

trifluoroacetate powders can be combined in a 2:1:3 ratio in methyl alcohol to
produce a solution substantially 0.94 M based on copper content.
[0111] In certain embodiments, the metal salt solution can contain a Lewis
base. The rare earth metal can be yttrium, lanthanum, europium, gadolinium,
terbium, dysprosium, holmi.um, erbium, thulium, ytterbium, cerium, praseodymium,
neodymium, promethium. samarium or'lutetium. In general; the rare earth" metal.^, -
,salt can be any rare earth metal salt that is soluble in the solvent(s) contained in
the metal salt solution and that, when being processed to form an intermediate
(e.g., a metal.oxyhalide intermediate), forms rare earth oxide(s) (e.g., Y2O3). *
■ Such salts can have, for example, the formula M(02C-(CH2)n-CXX'X")(02C-
(CH2)m-CX"X"*X )(02C-(CH2)p-CX X X'""'"') or M(OR)3. M is the rare earth
metal, n, m and p are each at least one but less than a number that renders the
salt insoluble in the solvent(s) (e.g., from one to ten). Each of X, X', X", X'", X"",
- x,,,.,^'"'^ x"'"" and X"""" is H, F, CI, Br or I. R is a carbon containing group, which
can be halogenated (e.g., CH2CF3) or nonhalogenated. Examples of such salts
include nonhalogenated carboxylates, halogenated acetates (e.g., trifluoroacetate,
trichloroacetate, tribromoacetate, triiodoacetate), halogenated alkoxides, and
nonhalogenated alkoxides. Examples of such nonhalogenated carboxylates -
include nonhalogenated acetates (e.g., M(02C-'C83)3)." The alkaline earth metal
can be barium, strontium or calcium. Generally, the alkaline earth metal salt can
. be any alkaline earth metal salt that is soluble in the solvent(s) contained in the
metal salt solution and that, when being processed to form an intermediate (e.g., a
metal oxyhalide intermediate), forms an alkaline earth halide compound (e.g.,
-, BaF2, BaCI2, BaBr2, Bal2) prior to forming alkaline earth oxide(s)-(e.g., BaO).
Such salts can have, for example, the formula M'(02C-(CH2)n-CXX'X")(02C-
' (•CH2)m-CX'"X""X'"") or M'(OR)2. M' is the alkaline earth metal, 'n and m are each
at least one but less than a number that renders the salt insoluble in the solvent(s)
(e.g:, from one to ten). Each of X, X', X", X!", X""and X is H, F, CI, B or, I. R
can be a halogenated or nonhalogenated carbon containing group. Examples,of
such salts include halogenated acetates (e.g., trifluoroacetate, trichloroacetate,
tribromoacetate, triiodoacetate). Generally, the transition metal is copper. The

transition metal salt should be soluble in the solvent(s) contained.in the metal salt
solution.. Preferably, during conversion of the precursor to the intermediate (e.g.,
metal oxyhalide), minimal cross-linking occurs between discrete transition metal
molecules (e.g., copper molecules). Such transition metals salts can have, for
example, the formula M"(CXX'X"-CO(CH)aCO-CX",X""X )(CX X X""""-
. CO(CH)bCO CX" 'X X"" ), M"(02C-(CH2)n-GXX'X") (02C-(CH2)m-
'CX'"X""X'""} or M"(OR)2. M" Is Ihe transition metai. a and bare each at least one
but less than a number that renders the salt insoluble in the solvent(s) (e.g., from
one to five). Generally, n and m are each at least one but less than a number that
render's the salt insoluble in the solvent(s) (e.g., from one to ten). Each of X, X',
-X"/X"\ X;'", X"'"', X""'", X"'":', X" , X ", X"; , X'" "' is. H, F, CI, Br or I. R is a
, carbon containing group, which can be halogenated (e.g., CH2CF3) or
nonhalogenated. These salts include, for example, nonhalogenated acetates
■ -(e.g., M"(02C-CH3)2), halogenated acetates, halogenated alkoxides, and
nonhalogenated alkoxides. Examples of such saits include copper
trichloroacetate;_copper tribromoacetate, copper triiodoacetate, ^ .
Cu(CH3COCHCOCF3)2, Cu(OOCC7H,5)2, Cu(CF3COCHCOF3)2,
Cu(CH3COCHCOCH3)2, Cu(CH3CH2C02CHCOCH3)2, CuO(C5H6N)2 and
Cu303iBa2(0-CH2CF3)^. In certain embodiments, the transition metal salt is a-
carboxyiate salt (e.g., a nonhalogenated carboxylate salt), such" as a propionate -
salt of the transition metal (e.g., a nonhalogenated propionate salt of the transition
metal). An example of a nonhalogenated propionate salt of a transition metal is
Cu(02CC2H5)2. In some embodiments, the transition metal salt is a simple salt,
such as copper sulfate, copper nitrate, copper iodide and/or copper oxylate. In
. some embodiments, n and/or m can have the vaiue zero, in certain
- embodiments, a'arid/or b can have the value zero. An illustrativeand honlimiting
list of Lewis bases includes nitrogen-containing compounds, such as ammonia
.and amines. Examples of.amines include CH3CN, CsH5N and R^R^N, Each of •
~Ri R2R3 is independently H; an alkyl group (e.g., a straight chained alky! group, a
branched alkyl group, an aliphatic alkyl group, a non-aliphatic alkyl group and/or a
substituted alkyl group) or the like. Without wishing to be bound by theory, it is
believed that the presence of a Lewis base in the metal salt solution can r^Hnnp

cross-linking of copper during intermediate formation. It is believed that this is
achieved because a Lewis base can coordinate (e.g., selective coordinate) with
copper ions, thereby reducing the ability of copper to cross-link.
[0112] Typically, the metal salt solution is applied to a surface (e.g., a buffer
layer surface), such as by spin coating, dip coating, web coating,,slot coating,
gravure coating, or other"techniques known to those skilled in.the art, and . ■-
subsequently heated.
[0113] At a subsequent station 1140, the precursor components are
decomposed. In the case of precursor components including at least one fluoride-
'containing salt, the first step of the heating step is performed to decompose the' ~
metalorganic molecules to one or more oxyfluoride intermediates of the desired
superconductor material.
[0114] . Typically, the initial temperature in this step is about room temperature,
andthe final temperature is from about 190°C to about 210°C, preferably to a .
temperature to about 200°C. Preferably, this step is performed using a '' '
temperature ramp of at least about 5°C per minute, more preferably a temperature
ramp of at least about 10°C per minute, and most preferably a temperature ramp. .
of at least about150C per minute. During this step, the partial pressure of water -
vapor in the nominal gas environment is preferably maintained at from about 5
Torr to about 50 Torr, more preferably at from about 5 Torr to about 30 Torr, and
most preferably at from about 20 Torr to about 30 Torr. The partial pressure of
, oxygen in the nominal gas environment is maintained at from about 0.1 Torr to
about 760. Torr and preferably at about 730 - 740 Torr.
[0145] Heating is then continued to a temperature of from about 200°C to
about 290°C using a temperature ramp of from about 0.05°C per minute to about
5CC per minute (e.g., from about 0;5°C per minute to about 1°C per minute).
Preferably, the gas eiiviiui iinenl duiing this heating step" is substantially the same
as the nominal gas environment used when the sample is heated to from the initial
temperature to from about 190°C to about 215°C.

[0116] Heating is further continued to a temperature of about 650°C, or more
preferably to a temperature of about 400°C, to form the oxyfluoride intermediate.
This step is preferably performed using a temperature ramp of at least about 2°C
per.minute, more preferably at least about 3°C per minute, and most preferably at
least about 5°C per minute. Preferably, the gas environment during this heating
step i's substantially the same as the nominal gas environment used when the"".
sample is heated to from th'e initial lemperature to from about !'90°C !o about
215°C.
[0117] In alternate embodiments, barium fluoride is formed by heating the dried
solution from ah initial temperature (e.g., room temperature) to a temperature of
from about 190°C to about 215°C (e.g., about 210°C) in a water vapor pressure of
from about 5 Torr to about 50 Torr water vapor (e.g., from about 5 Torr to about
30 Torr water vapor, or from about 10 Torr to about 25 Torr water vapor). The
nominal partial pressure of oxygen can be, for example, from about 0.1 Torr to
about 760 Torr. In these embodiments, heating is then continued to a;
temperature of from about 220°C to about 290°C(e'.g., about 220°C) in a water
vapor pressure of from about 5 Torr to about 50 Torr water vapor (e.g., from about
5 Torr to about 30 Torr water vapor, or from about 10 Torr to about 25 Torr water
vapor). The nominal partial pressure of oxygen can be, for example, from about
0.1 Torr to about 760 Torr. This is followed by heating to about 400°C at a rate of
at least about 2°C per minute (e.g., at least about 3°C per minute, or at least
. about 5°C per minute) in a water vapor pressure of from about 5 Torr to about 50
Torr water vapor (e.g., from about 5 Torr to about 30 Torr water vapor, or from
about 10 Torr to about 25 Torr water vapor) to form barium fluoride. The nominal
partial pressure of oxygen can be, for example, from about 0.1 Torr to about 760
Torr. - ■ • .
[0118] In certain embodiments, heating the dried solution to form barium
' 'fluoride can include putting the coated sample in a pre heated furnace (e.g., at a
temperature.of at least about 100°C, at least about 150°C, at least about 200°C,
at most about 300°C, at most about 250°C, about 200°C). The gas environment
in the furnace can have, for examnle a total ftac nroccuro nf ^nnt TRO TV^ ~

predetermined partial pressure of water vapor (e.g. at least about 10 fo'rr, at least
about 15 Torr, at most about 25 Torr, at most about 20 Torr, about 17 Torr) with
the balance being molecular oxygen. After the coated sample reaches the
furnace temperature, the furnace temperature can be increased (e.g., to at least
about 225°C, to at least about 240°C, to at most about 275°C, to at most about
_^ 260°C, about 250°C) at a predetermined temperature ramp rate (e.g:,"'at least
about 0.5°C per minute, at least about 0.75°C per minute, at most about 2°C per
minute, at most about 1.5^ per minute, about 1°C per minute). This step can be
performed with the same nominal gas environment used in the first heating step.
The temperature of the furnace can then be further increased (e.g., to at least
abqJt~350!C, to at least about375°C, to at most about 450°C, to at most about -
425°C, about 450°C) at a predetermined temperature ramp rate (e.g., at least
about 5°C per minute, at least about 8°C per minute, at most about 20°C per
minute, at most about 12°C per minute, about 10°C per minute). This step can be
. performed with the same nominal gas environment used in the first heating step.
.-[01-19]: . Additional layers can be deposited over a previously deposited layer, -
which have been processed to form an oxyfluoride intermediate film. Processing-
conditions are substantially as described herein above; however, the partial
pressure of .water vapor during decomposition to the oxyfluoride film is about 5-10
torr. ■ ' " .
[0120] . The foregoing treatments of a metal salt solution can result in an
oxyfluoride intermediate film in which the constituent metal oxides and metal
fluorides are homogeneously distributed throughout the film. Preferably, the
precursor has a relatively low defect density and is essentially free of cracks ,
through the intermediate thickness. While solution chemistry for barium fluoride
formation has been disclosed, other methods can also be used for other precursor,
solutions.
[ui21j The superconductor intermediate film can then beheated to form the
desired BTS layer at a further processing station 1150. Typically, this step is
performed by Heating from about room temperature to a temperature of from

about 700°C to about 825°C, preferably to a temperature of about 740°C to 800°C .
.and more preferably to a temperature of about 750°C to about 790°C, at a
temperature ramp of about greater than 25°C per minute, preferably at a
temperature rate of about greater than 100°C per minute and more preferably at a •
temperature rate about greater than 200°C per minute. This step can also start
from the final temperature of about 400 - 650°C used'to form the intermediate
oxyfluoride film. During this step, a process gas is flowed over the film surface to
supply the gaseous reactants to the film and to remove the gaseous reaction
products from the film. The nominal gas environment during this step has a total
pressure of about 0.1 Torr to about 760 Torr and is comprised of about 0.09 Torr • '
- to about 50 Torr oxygen and about 0.01 Torr to about 150 Torr water vapor and
about 0 Torr to about 750 Torr of an inert gas (nitrogen or:argon). More
preferably, the nominal gas environment has a total pressure of about 0.15 Torr to
about-5'Torr and is comp'rised of about 0.1 Torr to about 1 Torr oxygen'and about
0.05 Torr to about 4 Torr water vapor.
. [0122] The film is4hen held at a temperature of about 700°C - 825°C,'
preferably to a temperature of about 740°C to 800°C and more preferably to a
temperature of about 750°C to about 790°C, for a time of about at least 5 minutes
to about "120 minutes', preferably for a time of at least about 15 minutes to about
60 minutes, and more preferably for a time of at least about 15 minutes to about
30 minutes. During this step, a process gas is flowed over the film surface to
supply the gaseous reactants to the film and to remove the gaseous reaction
products from the film. The nominal gas environment during this step has a total
pressure of about 0.1 Torr to about 760 Torr and is comprised of about 0.09 Torr
to about 50 Torr oxygen and about 0.01 Torr to about .1.50 Torr water vapor and
about 0 Torr to about 750 Torr of an inert gas (nitrogen or argon). More
preferably, the nominal gas environment has a total pressure of about 0.15 Torr to
•about 5 Torr and is comprised of about 0.1 Torr to about 1 Torr oxygen and about
0.U5 Torr to" about 4 Torr water vapor. .
[0123] The film is then cooled to room temperature in a/nominal gas
environment with'fln nxvrifin nrASSiirp nf ahni it n Ofi Tnrrtn about 1 ^n Tnrr

> . - - -
preferably about 0.1 Torrto about 0.5 Torr and more preferably from about 0.1
Torr to about 0.2 Torr.
[0124] Treatment of precursor films as described above provide a
superconductor oxide film of normal 123YBC stoichiometry. Stoichiometry my
vary if the precursor composition contains, for example, additives for the formation
* ;of second phase..precipitates-fbr Ihe formation of nanoscale pinning sites:,
[0125] Optionally, filamentization can be performed at station 1160 by known
processes, or by processes described in U.S.- Patent Application 10/955,801, filed
. on September 29, 2004. Further processing by noble metal deposition at station
1170roxygen annealing in a high oxygen environment, e.g., 760 torr 02l at station
1180, lamination as described herein above and slitting at station 1190 complete
the process.
; [0126] The invention is described with reference to the following examples,
which'are presented for the purpose of illustration and are in no way intended to
be limiting of the invention.
Example 1. Preparation of a high lc(ab) superconducting layer.
[0127] A Y-123 precursor solution having a stoichiometry of Y:Ba:Cu of
1:2:3.34 was prepared by dissolving about 0.83 grams of Y(CF3C02)3, about 1.60
grams of Ba(CF3C02)2 and about 1.54 grams of Cu(C2H5C02)2 in about 4.85 ml.
of methanol (CH3OH) and about 0.15 ml of propionic acid (C2H6C02). -The final
volume of the solution was adjusted to about 5 ml with methanol.
[0128] The precursor solution was deposited by a spin coating technique, at a
speed of 2000 RPM, on a length (20 cm'to 10 meter) of 1 cm wide biaxially
textured oxide.buffered metallic substrate with the structure-
Ni(5at%)WA,203A'SZ/CeO2. A sufficient quantity of precursor sblutionwas
deposited to produce about a 0.8 u.m thick YBa2Cu307.x film.-
[0129] The coated sample was decomposed to an intermediate metal
OXVfllinriHfi film hw hpatinn in a 9 9^" Hiamotor tnho fnrnaro frrvm r/-inm

temperature to about 200°C at a rate of about 15°C per minute, then from about
200°C to about 250 C at a rate of about 0.9°C per minute and then from about
250°C to about 400°C at a rate of about 5°C per minute in a flowing gas
environment having a total gas pressure of about 760 torr (water vapor pressure
of about 24 torr and balance oxygen).
[0130.] - The'metal oxyfluoride film was then heat-treated to form an oxide--
superconductor. A short lengih (1—2 cm) of the intermediate film was heated in a
tube furnace to about 785°C at a rate of about 200°C per minute and held for
about. 30 min in an environment having a total gas pressure of about 240 mtorr
(water vapor pressure of about 90 mtorr, andoxygen gas pressure of about 150 -• -
mtorr). After 30 min holding, the H2O vapor removed from the gas environment
and the film was then cooled to room temperature in about 150 mtorr 02. The
resulting film and was about 0.8 micron thick.
Example 2. Preparation of a high lc(c) superconductor layer using^ 50
mol% excess Er-Y123. • -- . " • - - .
•■-••' ' . ■Sf'S-
[0131] A precursor solution was prepared by dissolving about 0.83 grams of
Y(CF3C02)3, about 0.138 grams of Er(CH3C02)3, about 1.60 grams of
Ba(CF3C02)2 and about 1.28 grams of Cu(C2HsC02)2.in about 4.85 ml. of
' methanol (CH3OH) and about 0.15 ml of propionic acid (C2H6C02). The final
volume of the solution was adjusted to about 5 ml with methanol.
. [0132] The precursor was coated, decomposed, processed and Ag coated as
described in Example T. The resulting film had a smooth and shiny surface, and
surprisingly higher thickness of about 2.6 micron with a single coating. The x-ray
diffraction pattern of the final film showed the presence of was (001) textured
Y(Er)Ba2Cu307.x.

Example 3. Preparation of double coated superconducting layers with
different compositions
[0133] A baseline YBCO precursor solution having a stoichiometry of Y:Ba:Cu
of 1:2:3.23 was prepared by dissolving about 0.85 grams Y(CF3C02)3, about 1.45
grams of Ba(CF3C02)2 and about 1.35 grams of Cu(C2H5C02)2 in about 4.85 ml of
..methanol (CH30H) and about 0.15 ml of-propionic acid (C2H6C02).' The final • .
"volume of the solution was adjusted with methanol to have a Y concentration of
approximately 0.4 molar.
[0134] A YBCO precursor solution with 50% Dysprosium addition having a
stoichiometry.of -Y:Dy :Ba:Cu of 1:0.5:2:3.23 was prepared by dissolving about
1.70 grams Dy(CH3C02)3, and,about.1.90 ml of methanol (CH3OH) in'about 20
ml of baseline solution. The final volume of the solution was adjusted with •
methanol to, have a Y concentration of approximately 0.3 molar.. ...
[0135] The 50%Dy added precur$QGfe*>lution was deposited on a biaxially
textured oxide buffered metallic substrate with the structure
Ni(5at%)W/Y203/YSZ/CeO2 by slot die coating technique. The solution was
coated on the buffered substrate with the amount targeted to form a 0.8 ,um thick
REBa2Cu3CVx film. • - -
[0136] The coated sample was decomposed to an intermediate metal
oxyfluoride film by heating, in a 2.25".diameter tube furnace, from room
temperature to about 200°C at a rate of about 15°C per minute, then from about
200°C to about 250 C at a rate of about 0.9°C per minute and then from about
250^ to about 400°C at a rate of about 5°C per minute in a flowing gas
environment having;a total,gas pressure of about 760 torr (water vapor pressure
of about 17.5 torr and balance oxygen) 20°C.
[0137] The metal oxyfluoride film was then coated with baseline YBCO
precursor solution prepared as described earlier with target final thickness of
0.6u.m YBa2Cu3Ox. "

[0T38] The coated tape was decomposed again to form the intermediate metal
oxyfluoride by the same process as mentioned earlier except this time the H20
vapor pressure was controlled to about 9.2 torr.
[0139] The decomposed tape was heat treated to form an oxide
superconductor. The tape was joined with 4m of similarly coated NiW leader tape
-both'in front and in the back to establish the uniform'and control environment --
during the reaction. The tape was then reacted at 785°C with the following
parameters. The tape was ramped up to 785°C with average ramp rate of about
285°C/min. During reaction, the total pressure during reaction was controlled to
.about 1 torr. The Ha0.partial.pressure was about 800_.mtorr and oxygen partial
pressure was about 200 mtorr.. The reaction time was about 11 min. During
cooling, a total pressure of about 1 torr was used with oxygen partial pressure at
about 200 mtorr and N2 partial pressure at about 800 mtorr.
[0140] The.reacted film was coated with ~3um of Ag protection layer and then
annealed in 760torr oxygen environment. The resulting film carried lc of about.
~500/cm-width or a Jc of about 4 MA/cm2 at 77K, self field. The critical current
(lc) versus magnetic field orientation (0) at 75K and 1 Tesla is plotted in Figure
12. At 75 K and 1 Tesla, the HTS wire-carries lc of 114 A/cm-width and 178
A/cmVwidth-with'the field perpendicular and parallel to the sample surface,
respectively. This represents an anisotropy of about 1.5.
Incorporation By Reference
[0141] The following documents are hereby incorporated by reference: U.S.
Patent No. 5,231,074, issued on July 27, 1993, and entitled "Preparation of Highly
Textured Oxide Superconducting Films from MOD Precursor Solutions;" U.S.
- Patent No. 6,022,832, issued February 8, 2000, and entitled "Low Vacuum
Process for Producing Superconductor Articles with Epitaxial Layers;" U.S. Patent
No. 6,027^564, issued February 22, 2000, and entitled "Low Vacuum Process for
Producing Epitaxial Layers;" U.S. Patent No. 6,190,752, issued February 20,
2001, and entitled "Thin Films Having Rock-Salt-Like Structure Deposited on
fimnrnhnnc Ci irfo^ac-" DOT Di ,Kli<--it;^r> M^ \Mr\ nn/COCOn ^, .U\,~U^^ ~~ <0.-.+ ~l .-

5, 2000, and entitled "Alloy Materials;" PCT Publication No. WO/58044, published
on October 5, 2000, and entitled "Alloy Materials;" PCT Publication No. WO
99/17307, published on April 8, 1999, and entitled "Substrates with Improved
Oxidation Resistance;" PCT Publication No. WO 99/16941, published on April 8,'
1999, and entitled "Substrates for Superconductors;" PCT Publication No.
WO,98/584t5, published on December 23, 1998, and entitled "Controlled
'Conversion of Metal'Oxyfiuorides into Superconducting Oxides:" PCT Publication
No. WO 01/11428, published on February 15, 2001, and entitled "Multi-Layer
Articles and Methods of Making Same;" PCT Publication No. WO 01/08232,
published on February 1, 2001, and entitled "Multi-Layer"Articles And Methods Of
Making. Same;"' PCt Publication No. WO 01/08235, published on February 1, "'- '
2001, and entitled "Methods And Compositions For Making A Multi-Layer Article;"
PCT Publication No. WO 01/08236, published on February 1, 2001, and entitled
"Coated Conductor Thick Film Precursor;" PCT Publication No. WO 01/08169,
published on February 1, 2001, and entitled "Coated Conductors With Reduced
A.C.Xoss;" PCT Publication No. WO 01/15245, published on March 1, 20.01,-and" '
entitled "Surface Control Alloy Substrates and Methods of Manufacture Therefor;" -
PCT Publication No. WO 01/08170, published on February 1, 2001, and entitled
. "Enhanced Purity Oxide Layer Formation;" PCT Publication No. WO 01/26164,
published on April 12, 2001, and.entitled "Control of Oxide Layer Reaction Rates;"
PCT Publication No. WO 01/26165, published on April 12, 2001, and entitled
"Oxide Layer Method;" PCT Publication No. WO 01/08233, published on February
1, 2001, and entitled "Enhanced High Temperature Coated Superconductors;"
PCT Publication No. WO 01/08231, published on February 1, 2001, and entitled
"Methods of Making A Superconductor;" PCT Publication No. WO 02/35615,
published on April-20, 20.02, and entitled "Precursor Solutions and Methods of
Using Same;" U.S. Patent No. 6,436,317, issued on August 20, 2002, and entitled,
"Oxide Bronze Compositions and Textured Articles Manufactured in Accordance
^Therewith.;" U.S. Provisional Pafent Application No. 60/309,116, filed on July 31,-
2001, and entitled "Multi-Layer Superconductors and Methods of Making Same;"
U.S. Patent No. 6,797,313, issued on September 28, 2004, and entitled
"Superconductor Methods and Reactor;" U.S. Provisional Patent Application No.

60/166,297, filed orf November 18, 1999, and entitled "Superconductor Articles -
and Compositions and Methods for Making Same;" and commonly owned U.S.,
Patent No. 6,974,501, issued on December 13, 2005, and entitled
"Superconductor Articles and Compositions and Methods for Making Same;" U.S.
Patent Publication No. 2005-0065035, published March 24, 2005, and entitled
''Superconductor Methods and Reactors;" U.S. Patent Publication No. 2006-
0040830, published on February'23, 2006, and entitled "Low AC Loss Filamentary
Coated Superconductors;" U.S. Patent Application No. 10/955,801, filed on
September 29, 2004, and entitled "Stacked Filamentary Superconductors;" U.S.
Patent Application (number not yet assigned), filed, oh July 21, 2006, and entitled
"Fabrication of Sealed High Temperature Superconductor Wires;" U.S.-Provisional
Patent Application (number not yet assigned), filed on July 21, 2006, and entitled
"High Current, Compact Flexible Conductors Containing High Temperature
Superconducting Tapes;" U.S. Provisional Patent Application (number not yet.
assigned), filed on July 21, 2006, and entitled "Low Resistance Splice for High
Temperature Superconductor Wires;" and U.S. Provisional Patent Application
(number not yet assigned), filed July 24, 2006, and entitled "High Temperature
Superconductors Having Planar Magnetic Flux Pinning Centers and Methods for
Making the Same," all of which are hereby incorporated by reference.
[0142] Other embodiments are within the following claims.
What is claimed is:

WE CLAIM:
1. A superconducting wire, comprising:
at least first and second superconducting layers disposed on one or more
substrates in stacked relationship,
the first superconducting layer comprising a first high temperature
superconducting oxide selected to provide a first predetermined ratio of critical current
in a magnetic field parallel to the surface of the superconductor layer to critical current
in a magnetic field perpendicular to the surface of the superconductor layer
(Ic(ab)/Ic(c)), and
the second superconducting layer comprising a second high temperature
superconducting oxide selected to provide a second predetermined ratio of critical
current in a magnetic field parallel to the surface of the superconductor layer to critical
current in a magnetic field perpendicular to the surface of the superconductor layer
(Ic(ab)/Ic(c)),
wherein the first and second superconductor layers, in combination, provide a
predetermined overall critical current Ic in a selected magnetic field orientation and
wherein the first superconducting layer is selected to provide a higher critical current
Ic(c) in a magnetic field perpendicular to the surface of the superconducting layer than
the second superconducting layer and the second superconducting layer is selected to
provide a higher critical current Ic(c) in a magnetic field parallel to the surface of the
superconducting layer than the first superconducting layer.
2. The superconducting wire as claimed in claim 1, wherein the first predetermined
ratio for Ic(ab)/Ic(c) is less than or equal to 2.6 in an applied magnetic field of 1 Tesla
or greater.
3. The superconducting wire as claimed in claim 1, wherein the first predetermined
ratio for Ic(ab)/Ic(c) is less than 2.0 in an applied magnetic field of 1 Tesla or greater.

4. The superconducting wire as claimed in claim 11, wherein the second phase
nanoparticle comprises one or more of a rare earth element, an alkaline earth metal, and
a transition metal.
5. The superconducting wire as claimed in claim 11, wherein the second phase
nanoparticle is selected from the group consisting of zirconium oxide, aluminum oxide,
Y2Cu2O5, Y2BaCuo4, magnesium oxide, BaZrO3, silver and CeO2.
6. The superconducting wire as claimed in claim 1, wherein the second
predetermined ratio for Ic(ab)/Ic(c) is greater than 2.5 in an applied magnetic field of 1
Tesla or greater.
7. The superconducting wire as claimed in claim 1, wherein the second
predetermined ratio for Ic(ab)/Ic(c) is greater than 3.5 in an applied magnetic field of 1
Tesla or greater.
8. The superconducting wire as claimed in claim 1, wherein the second
predetermined ratio for Ic(ab)/Ic(c) is greater than 5.5 in an applied magnetic field of 1
Tesla or greater.
9. The superconducting wire as claimed in claim 14, wherein the applied magnetic
field is in the range of about 1 Tesla to about 6 Tesla.
10. The superconducting wire as claimed in claim 1, wherein the high temperature
superconductor comprises a rare earth-alkaline earth-copper oxide, wherein the copper
to alkaline earth ratio is greater than 1.5.
11. The superconducting wire as claimed in claim 1, wherein the thicknesses of the
first and second superconductor layers are different.

a first substrate;
at least one first buffer layer disposed on the first substrate and
supporting the first superconducting layer; and
a first metallic protective layer disposed on the first superconductor
layer; and
a second coated element comprising:
a second substrate;
at least one second buffer layer disposed on the second substrate and
supporting the second superconducting layer; and
a second metallic protective layer disposed on the second superconductor
layer.
29. The superconducting wire as claimed in claim 28, comprising:
an intervening binder layer disposed between the first and second coated
elements such that the first and second coated elements are joined at the first and
second substrates.
30. The superconducting wire as claimed in claim 29, comprising:
an intervening binder layer disposed between the first and second coated
elements such that the first and second coated elements are joined at the first and
second metallic protective layers.

Abstract of the Disclosure
A superconducting wire includes first and second superconducting layers
disposed on one or more substrates in stacked relationship the first
superconducting layer comprising a high temperature superconducting oxide of a
first composition and the second superconducting layer comprising a high
temperature superconducting layer of a second composition, wherein the-first and
second compositions are different. The first superconductor layer optionally
includes a high temperature superconductor composition selected to provide
enhanced critical current (lc(c)) in the,presence of magnetic fields perpendicular to
surface of the superconducting layer (H//c). The second superconductor layer
optionally includes a high temperature superconductor composition selected to
provide enhanced critical current (Ic) in the presence of magnetic fields parallelto
surface of the superconducting layer (H//ab).