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"Imaging Element And Camera System"

Abstract: An imaging element includes an amplifying transistor. A signal charge from the photodiode is transferable to the gate of amplifying transistor, the photodiode being within a semiconductor substrate. The source and drain of the amplifying transistor are electrically isolated from a semiconductor substrate, wherein the source is within a well or the source and drain are within a silicon-on-insulator layer.

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Patent Information

Application #
Filing Date
26 November 2010
Publication Number
40/2013
Publication Type
INA
Invention Field
COMMUNICATION
Status
Email
remfry-sagar@remfry.com
Parent Application

Applicants

SONY CORPORATION
1-7-1 KONAN, MINATO-KU, TOKYO, JAPAN

Inventors

1. TOSHIYUKI NISHIHARA
C/O SONY CORPORATION, 1-7-1 KONAN, MINATO-KU, TOKYO, JAPAN
2. HIROFUMI SUMI
C/O SONY CORPORATION, 1-7-1 KONAN, MINATO-KU, TOKYO, JAPAN

Specification

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