Abstract: An input device pertaining to one embodiment of the present technique is provided with an operation member an electrode substrate and a first support. The operation member has a plurality of key areas and is configured to be capable of being deformed. The electrode substrate has a first capacitance element disposed facing each of the plurality of key areas and a second capacitance element disposed around the first capacitance element. The electrode substrate is configured so as to be able to electrostatically detect a change in the distance between each of the plurality of key areas and itself. The first support has a plurality of first structures and a first space. The plurality of first structures connect between the electrode substrate and the operation member. The first space is formed between the plurality of first structures and is configured so as to be able to change the distance between each of the plurality of key areas and the electrode substrate in accordance with an inputted operation.
DESCRIPTION
INPUT APPARATUS AND ELECTRONIC APPARATUS
Technical Field
[0001] The present technology relates to an input
apparatus and an electronic apparatus that are capable
of electrostatically detecting an input operation.
Background Art
[0002] As an input apparatus capable of
10 electrostatically detecting an input operation, an
input apparatus that enables an key input to be
performed by touching a keyboard displayed on a screen
is known. For example, Patent Document 1 discloses an
input device in which a GUI component such as a
15 software keyboard is displayed on a touch panel
functioning as a display device and, by touching a
displayed key, that key is displayed.
[0003] Patent Document 1: Japanese Patent
Application Laid-open No. 2012-146267
20 Summary of Invention
Problem to be solved by the Invention
[0004] In the input apparatus using the touch panel
displaying the keyboard, an operator cannot place the
finger on the key on the screen. In other words, the
25 operator always needs to touch a desired key region
from a state in which the operator separates the finger
5
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therefrom. Thus, the operability is lowered. Further,
stroke feeling and click feeling cannot be provided.
Thus, it is disadvantageous in that it is not suitable
for high-speed inputs.
[0005] In view of the above-mentioned circumstances,
it is an object of the present technology to provide an
input apparatus and an electronic apparatus that are
capable of providing the stroke feeling and cl.ick
feeling while ensuring the operability of the key
10 inputs.
Means for solving the Problem
[0006] In order to achieve the above-mentioned
object, an input apparatus according to an embodiment
of the present technology includes an electrode
15 substrate and a first support.
The operation member includes a plurality of key
regions and is configured to be deformable.
The electrode substrate includes a first
capacitive element arranged opposed to each of the
20 plurality of key regions and a second capacitive
element arranged around the first capacitive element.
The electrode substrate is capable of electrostatically
detecting a change of a distance from each of the
plurality of key regions.
25 The first support includes a plurality of first
structures and a first space. The plurality of first
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structures connect between the electrode substrate and
the operation member. The first space is formed between
the plurality of first structures and capable of
changing the distance between each of the plurality of
5 key regions and the electrode substrate according to an
input operation.
[0007] The input apparatus detects the input
operation with respect to the key region, using a
change of capacitance of the first and second
10 capacitive elements based on a change of a distance by
which each of the first and second capacitive elements
is opposed to the key region. This enables the input
operation to be performed in a state in which the
finger or the like is placed on the operation member.
15 Thus, it is possible to prevent the operability from
being lowered. Further, each key region is supported on
the electrode substrate via the first space formed
between the plurality of first structures. Thus,
predetermined stroke feeling and click feeling can be
20 provided.
[0008] In addition, in the electrode substrate, the
first capacitive elements and the second capacitive
elements arranged around them are provided
corresponding to each key region. Thus, a stable input
25 operability irrespective of the input area and the
input position can be provided.
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[0009] The first capacitive element may be arranged
opposed to a center portion of each of the plurality of
key regions. In this case, the second capacitive
element is arranged opposed to a circumferential
5 portion of each of the plurality of key regions. With
this, for example, the variation of the detection
sensitivity between the center position and the
circumferential position of the key region can be
suppressed.
10 [0010] The electrode substrate may further include a
limitation layer. The limitation layer is provided
between the second capacitive element and the operation
member and partially limits a thickness of the first
space. The limitation layer is typically formed of a
15 dielectric material. With this, the sensitivity of the
second capacitive elements is enhanced and the
variation of the operability due to the input area and
the input position can be suppressed.
[0011] The operation member may further include a
20 conductor layer provided on a surface opposed to the
electrode substrate. With this, for example, it becomes
possible to perform a suitable input operation also in
a state the user wears gloves, for example.
[0012] The input apparatus may further include a
25 base substrate and a second support.
The base substrate is provided opposed to the
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operation member while sandwiching the electrode
substrate therebetween and includes a conductor layer
on a surface opposed to the electrode substrate.
The second support includes a plurality of second
5 structures and a second space. The plurality of second
structures connect between the electrode substrate and
the base substrat~ and are respectively opposed to the
plurality of first structures while sandwiching the
electrode substrate therebetween. The second space is
10 formed between the plurality of second structures and
capable of changing the distance between the electrode
substrate and the base substrate according to an input
operation.
In this case, the first support may further
15 include a plurality of third structures. The plurality
of third structures connect between the electrode
substrate ilnd the operation member and are arranged in
the first space.
[0013] According to the input apparatus, a relative
20 distance between each of the operation member and the
conductor layer and the electrode substrate when
pressed from above the operation member changes. Thus,
it becomes possible to electrostatically detect the
input operation, for example, press on the basis of the
25 change of the distance thereof. Therefore, the amount
of capacitance change based on the input operation can
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be increased and it becomes possible to enhance the
detection sensitivity.
[0014] The operation member may further include a
coupling region that is supported by the plurality of
5 first structures and couples the plurality of key
regions to each other. In this case, the coupling
region is formed to have flexural rigidity lower than
that of the plurality of key regions. In this
configuration, the variation of the operability due to
10 a difference between the input area and the input
position can be further suppressed.
[0015] In this case, the plurality of key regions
may be formed to have a thickness larger than that of
the coupling region. With this, the flexural rigidity
15 of the key region can be easily made higher than that
in the coupling region.
[0016] The input apparatus may further include a
control unit.
The control unit is electrically connected to the
20 electrode substrate and configured to generate
information on an input operation with respect to each
of the plurality of key regions on the basis of outputs
of the first capacitive element and the second
capacitive element.
25 [0017] The control unit may be configured to output
an input signal if an amount of capacitance change of
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the first capacitive element lS above a first threshold
and an amount of capacitance change of the second
capacitive element is above a second threshold smaller
than the first threshold.
[0018] Alternatively, the control unit may be
configured to output an input signal if a difference
between an amount of capacitance change of the first
capacitive element and an amount of capacitance change
of the second capacitive element is above a
10 predetermined threshold.
[0019] Alternatively, the control unit may be
configured to output an input signal if an amount of
capacitance change of the first capacitive element is
above a first predetermined value and a time rate of
15 change of capacitance of the first capacitive element
is above a second predetermined value.
[0020] An electronic apparatus according t
Fig. 1 is a schematic cross-sectional view of an
input apparatus according to a first embodiment of the
present technology. Fig. 2 is a plan view of the input
apparatus. Fig. 3 is a main-part enlarged cross-
15 sectional view of the input apparatus.
Hereinafter, the configuration of an input
apparatus l of this embodiment will be described. Note
that, in the figure, an X-axis and a Y-axis show
directions orthogonal to each other (in-plane direction
20 of the input apparatus 1) and a Z-axis shows a
direction orthogonal to the X-axis and Y-axis
(thickness direction of the input apparatus 1)
[0025] [Basic Configuration of Input Apparatus]
The input apparatus 1 includes an operation member
25 10, an electrode substrate 20, and a support 30 (first
support). The input apparatus 1 is configured as a
5
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keyboard apparatus of an electronic apparatus such as a
computer.
[0026] The operation member 10 includes a plurality
of key regions lOa and is configured to be deformable.
The electrode substrate 20 includes first
capacitive elements Cl arranged opposed to the
plurality of key regions lOa and second capacitive
elements C2 respectively arranged around the first
capacitive elements Cl. The electrode substrate 20 is
10 configured to be capable of electrostatically detecting
a change of a distance from each of the plurality of
key regions lOa.
The support 30 includes a plurality of structures
31 (first structure) and a space 32 (first space) The
15 plurality of structures 31 connect between the
electrode substrate 20 and the operation member 10. The
first space 32 is formed among the plurality of
structures 31. The first space 32 is configured to be
capable of changing a distance between each of the key
20 regions lOa and the electrode substrate 20 according to
an input operation.
[0027] (Operation Member)
In this embodiment, the operation member 10 has a
laminated structure of a base material 11 and a
25 conductor layer 12.
[0028] The base material 11 is, for example, formed
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of a flexible insulation plastic sheet of PET
(polyethylene terephthalate), PEN (polyethylene
naphthalate), PMMA (polymethyl methacrylate), PC
(polycarbonate), PI (polyimide), or the like. The
5 thickness of the base material 11 is not particularly
limited and is, for example, approximately several tens
to several hundreds Jlm. In a top surface of the
operation member 10, the plurality of key regions lOa
are arrayed.
10 [0029] The conductor layer 12 is provided on a back
surface of the base material 11, which is opposed to
the .electrode substrate 20. The ~onductor layer 12 is
formed of a metal foil or mesh material of Cu (copper),
Al (aluminum), or the like. The conductor layer 12 is
15 configured to be partially deformable toward the
electrode substrate 20 when receiving input operations
with respect to the plurality of key regions lOa. The
thickness of the conductor layer 12 is not particularly
limited and is, for example, several tens nm to several
20 tens Jlm. The conductor layer 12 is typically connected
to a ground potential.
[0030] The base material 11 and the conductor layer
12 may be formed of, for example, a composite sheet
obtained by bonding a metal foil onto a surface of a
25 resin sheet in advance. The base material 11 and the
conductor layer 12 may be formed of, for example, a
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deposition film or sputtering film formed on the
surface of the base material 11. Alternatively, the
base material 11 and the conductor layer 12 may be a
coating film of a conductive paste or the like printed
5 on the surface of the base material 11. Still
alternatively, the conductor layer 12 may be omitted
according to the specifications of the input apparatus
1.
[0031] Each of the key regions lOa corresponds to a
10 key top pressed and operated by a user and has shape
and size depending on the type of the key. Each of the
key regions lOa is configured to be deformable toward
the electrode substrate 20 according to a press
operation (input operation) made by a finger of the
15 user or an operation element such as a stylus.
[0032] Key display may be performed on each of the
key regions lOa if necessary. The key display may
display the type of the key, the position (outline) of
the individual key, or the both. A suitable printing
20 method, for example, screen printing, flexography, or
rotogravure can be adopted for the display.
[0033] The base material 11 may be formed of a
conductive material such as a metal. With this, the
conductor layer 12 becomes unnecessary, which can make
25 the operation member 10 thin. In this case, the base
material 11 also functions as the conductor layer 12
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and is, for example, connected to the ground potential.
[0034] (Electrode Substrate)
The electrode substrate 20 has a laminated
structure of a first wiring board 21 and a second
5 wiring board 22. Fig. 4 is a main-part plan view
10
showing the configuration of the electrode substrate 20.
Fig. 5 is a main-part plan view of the first wiring
board 21. Fig. 6 is a main-part plan view of the second
wiring board 22.
[0035] The first wiring board 21 includes a first
base material 2ls formed of an insulation plastic sheet
and a plurality of first electrode wires 210 formed on
the first base material 2ls.
[0036] The plurality of first electrode wires 210
15 each include a first electrode section 211 and a second
electrode section 212. The first and second electrode
sections 211, 212 are arranged in a plurality of
detection regions 21a corresponding the plurality of
key regions lOa, respectively. In this embodiment, the
20 first electrode section 211 is located in a center
portion of each detection region 2la and the second
electrode section 212 is located in a circumferential
portion of each detection region 21a.
[0037] The first electrode wires 210 are formed
25 connecting the detection regions 21a in respective
columns along an X-axis direction to one another in the
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X-axis direction. The first electrode section 211 and
the second electrode section 212 are formed of
independent electrode wires (first electrode wires 210) ,
respectively.
5 [0038] On the other hand, the second wiring board 22
includes a second base material 22s formed of an
insulation plastic sheet and a plurality of second
electrode wires 220 formed on the second base material
22s.
10 [0039] The plurality of second electrode wires 220
each include a first electrode section 221 and a second
electrode section 222. The first and second electrode
sections 221, 222 are arranged in a plurality of
detection regions 22a corresponding to the plurality of
15 key regions lOa. In this embodiment, the first
electrode section 221 is located in a center portion of
each detection region 22a and the second electrode
section 222 is located in a circumferential portion of
each detection region 22a.
20 [0040] The second electrode wires 220 are formed
connecting the detection regions 22a in the respective
columns along the X-axis direction to one another in a
Y-axis direction. The first electrode section 221 and
the second electrode section 222 are integrally
25 connected to each other in each detection region 22a.
[0041] The first base material 2ls and the second
- . .. - - ------~---
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base material 22s are formed of an electrical
insulation plastic sheet, glass substrate, glass epoxy
substrate, or the like of PET, PEN, PC, PMMA, or the
like. The thickness of the first base material 2ls and
5 the second base material 22s is not particularly
limited and is, for example, several tens [lm to several
hundreds ~Lm. The first base material 2ls and the second
base material 22s may be formed of a flexible sheet
material or may be formed of an inflexible sheet
10 mate.rial.
[0042] The first electrode wires 210 and the second
electrode wires 220 are respectively formed on the
first base material 2ls and the second base material
22s by, for example, etching of a .metal foil of Al, Cu,
15 or the like or printing of a metal paste of Ag (silver)
or the like.
[0043] The first wiring board 21 and the second
wiring board 22 may be laminated such that the first
and second electrode wires 210, 220 are opposed to each
20 other while sandwiching an adhesive layer (not shown)
therebetween or may be laminated such that the first
and second electrode wires 210, 220 are opposed to each
other while sandwiching at least either one of the
first and second base materials 2ls, 22s therebetween.
25 [0044] In the electrode substrate 20, the detection
regions 2la on the first wiring board 21 and the
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detection regions 22a on the second wiring board 22 are
opposed to each other in a Z-axis direction. In this
manner, the detection regions 2la on the first wiring
board 21 and the detection regions 22a on the second
5 wiring board 22 form a plurality of detection regions
20a of the electrode substrate 20 that are arranged
opposed to the plurality of key regions lOa.
[OD45] As shown in Fig. 4, the first electrode
sections 211 of the first electrode wires 210 and the
10 first electrode sections 221 of the second electrode
wires 220 are opposed to each other in the Z-axis
direction. With this, first capacitive elements
(capacitive sensors) Cl of the electrode substrate 20
are formed. Sirnilarly, the second electrode sections
15 212 of the first electrode wires 210 and the second
electrode sections 222 of the second electrode wires
220 are opposed to each other in the Z-axis direction.
With this, second capacitive elements (capacitive
sensors) C2 of the electrode substrate 20 are formed.
20 [0046] The first and second capacitive elements Cl,
C2 have initial capacitances set in advance. The
capacitances of the capacitive elements Cl, C2 change
depending on distances from the key region lOa
(conductor layer 12) opposed to them. As will be
25 described later, the electrode substrate 20 is
electrically connected to a control unit 60. Thus, the
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change of the distance between any of the key regions
lOa and the detection region 20a opposed thereto is
detected on the basis of the amount of capacitance
change of the capacitive elements Cl, C2. In this
5 manner, the electrode substrate 20 is configured to be
capable of electrostatically detecting the change of
the distance from each of the plurality of key regions
lOa.
[0047] In this embodiment, the first capacitive
10 element Cl is provided opposed to a center portion of
each of the plurality of key regions lOa and the second
capacitive element C2 is provided opposed to a
circumferential portion of each of the plurality of key
regions lOa.
15 [0048] (Support)
The support 30 is provided between the operation
member 10 and the electrode substrate 20. The support
30 includes the plurality of structures 31 (first
structure) and the space 32 (first space). The
20 plurality of structures 31 connect between the
electrode substrate 20 and the operation member 10. The
space 32 is formed among the plurality of structures 31
and configured to be capable of changing the distance
between each of the plurality of key regions lOa and
25 the electrode substrate 20 according to an input
operation.
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[0049] In this embodiment, the support 30 further
includes a base material 33 that supports the
structures 31. The base material 33 is formed of an
electrical insulation plastic sheet of PET, PEN, PC, or
5 the like. The base material 33 is laminated on the
second wiring board 22 of the electrode substrate 20.
The thickness of the base material 33 is not
particularly limited and is, for example, several f-Lm to
several hundreds f-Lm.
10 [0050] The plurality of structures 31 have the same
height (e.g., several f-Lm to several hundreds f-Lm) The
plurality of structures 31 connect between the
electrode substrate 20 and the operation member 10 so
as to partition the key regions lOa of the operation
15 member 10 (the detection regions 20a of the electrode
substrate 20).
[0051] In view of an improvement of the operability
(click feeling and stroke feeling) and the detection
sensitivity of each key region lOa, each of the
20 structures 31 is formed of a material having relatively
high rigidity. However, each of the structures 31 may
be formed of an elastic material. Each of the
structures 31 is formed of, for example, an electrical
insulation resin material such as an ultraviolet
25 curable resin. Each of the structures 31 is formed on
the surface of the base material 33 by using a suitable
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method such as a transfer method.
[0052] The space 32 is configured to be capable of
partially elastically deforming the operation member 10
toward the electrode substrate 20 in each of the key
5 regions lOa. Although the space 32 is formed to
mutually communicate with the plurality of key regions
lOa, it is not limited thereto. The space 32 may be
independently provided in each of the key regions lOa.
10
[0053] (Control Unit)
The input apparatus 1 of this embodiment further
includes the control unit 60. The control unit 60 is
electrically connected to the electrode substrate 20
and configured to generate, on the basis of outputs of
the first capacitive element Cl and the second
15 capacitive element C2, information on an input
operation with respect to each of the plurality of key
regions lOa.
[0054] The control unit 60 is typically formed of a
computer including a CPU/MPU, a memory, and the like.
20 The control unit 60 may be formed of a single chip
component or may be formed of a plurality of circuit
components. The control unit 60 may be installed in the
input apparatus 1 or may be installed in an apparatus
main body (processing apparatus) connected to the input
25 apparatus 1. In the former case, for example, the
control unit 60 is mounted on a flexible wiring board
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connected to the electrode substrate 20. In the latter
case, the control unit 60 may be integrally configured
with a controller that controls the apparatus main body.
[0055] The control unit 60 includes a storage unit
5 and an arithmetic unit. The storage unit stores key
layout information of the operation member 10. The
arithmetic unit executes input determination on the
plurality of key regions lOa on the basis of the key
layout information stored in the storage unit and the
10 outputs of the first and second capacitive elements Cl,
C2 in each of the detection regions 20a. Typically, the
control unit 60 sets thresholds corresponding to the
amount of capacitance change of the first and second
capacitive elements Cl, C2 and performs a key input
.15 determination based on its level compared with the
thresholds.
[0056] For example, the control unit 60 is
configured to output an input signal if the amount of
capacitance change of the first capacitive element Cl
20 is above a first threshold and the amount of
capacitance change of the second capacitive element C2
is above a second threshold smaller than the first
threshold.
[0057] The control unit 60 is configured to output
25 an input signal if a difference between the amount of
capacitance change of the first capacitive element Cl
·r
'
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and the amount of capacitance change of the second
capacitive element C2 is above a predetermined
threshold.
[0058] The control unit 60 is configured to output
5 an input signal if the amount of capacitance change of
the first capacitive element Cl is above a first
predetermined value and a time rate of change of
capacitance of the first capacitive element Cl is above
a second predetermined value.
10 [0059] The storage unit may be configured to be
capable of storing key layout information of a
plurality of types of operation members including the
plurality of key regions lOa in different layouts. With
this, it becomes possible to determine a suitable input
15 operation also with respect to the plurality of
operation members in different key layouts.
[0060] The arithmetic unit is configured to generate
a control signal varying depending pn the amount of
capacitance change of the first and second capacitive
20 elements Cl, C2 in at least one detection region 20a of
the plurality of detection regions 20a. With this, it
becomes possible to perform not only on/off
determination of the key region lOa but also
determination as to the presence/absence, operating
25 force, or the like of a touch operation with respect to
the key region lOa.
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[0061] The arithmetic unit may be configured to
generate a control signal if the amount of capacitance
change of the first and second capacitive elements C1,
C2 in at least one detection region 20a of the
5 plurality of detection regions 20a is equal to or
larger than a predetermined value. In this
configuration, the control signal is output to the
apparatus main body (processing apparatus) only when an
operation requiring control is performed. Thus, the
10 amount of processing of signals in the apparatus main
body can be reduced.
[0062] [Action of This Embodiment]
(Basic Operation)
The keyboard widely used as a key input apparatus
15 enables a favorable and stable key input to be
performed by using a depression (stroke) in pressing
the key with a predetermined finger and a sense (click
feeling) in pressing the key. For that reason, the
keyboard is a widely used input apparatus.
20 [0063] For example, in a mechanical keyboard 110
shown in Fig. 7, a plurality of substantially platelike
keys 101 movable in upper and lower directions and
upper and lower conductive layers 102, 103 below each
of them are arranged. The mechanical keyboard 110 has a
25 structure that the key 101 is pressed with a desired
force to bring the upper and lower conductive layers
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102, 103 into contact with each other for obtaining a
switch-on state. Such a structure imposes a limitation
on fabrication of a thin keyboard. In recent years, a
thin keyboard or the like using a resistance change
5 material between the upper and lower conductive layers
has also been proposed.
[0064] In addition, a key input apparatus with a
touch panel is more and more popular; In the key input
apparatus, a screen keyboard is displayed on a part of
10 the screen and character inputs are performed by
touching the screen. In this system, the consistency of
coordinates of the touch panel and a key region
displayed on the screen is calculated, and if it is
determined that the finger or the like has touched a
15 predetermined key region, it is determined that a key
input is performed.
[0065] llowever, unlike the above-mentioned keyboard
110, an operator cannot place the finger on the key in
the screen. In other words, the operator always needs
20 to perform a key input by touching a desired key region
with the finger from a state in which the operat.or
separates the finger therefrom. Further, the stroke
feeling and click feeling as in the abbve-mentioned
mechanical keyboard cannot be provided. Thus, it is
25 disadvantageous in that it is not suitable for highspeed
inputs. In addition, except for special cases,
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widely used capacitive touch panels have
characteristics in that they cannot receive inputs
through a glove and the like and hardly react touches
of minute portions such as a distal edge of a nail.
5 Such characteristics significantly deteriorates the
operability of the key inputs.
10
[0066] In contrast, the input apparatus 1 of this
embodiment has the following characteristics, for
example.
[0067] (1) The input apparatus 1 of this embodiment
functions to detect the change of the distance between
the conductor layer 12 and the electrode substrate 20
provided on the back of the key region lOa as the
change of capacitance of the capacitive sensors (first
15 and second capacitive elements Cl, C2). Therefore, with
respect to a manipulation operation, in addition to the
binary determination of on/off, it is possible; to
detect the change of the distance between the conductor
layer 12 and the electrode substrate 20 on the basis of
20 the change of capacitance of the capacitive sensors due
to local deformation of the operation member 10 (key
region lOa) depending on an operating force. With this,
by setting thresholds corresponding to the amount of
capacitance change, the key input determination can be
25 performed based on its level compared with the
thresholds.
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[0068] Although, for example, the sensitivity of the
on/off operation load depends on the device properties
in the keyboard 110 as shown in Fig. 7, the operation
sensitivity can be set by the values of the thresholds
5 in the input apparatus 1 of this embodiment. In
addition, an input apparatus can be formed of a single
device having a plurality of performance operation load
sensitivities. It means that, in addition to freely
setting the operation load, even the key input
10 apparatus can perform various types of detection such
as coordinate detection using gravity center
calculation and load-amount detection.
[0069] On the other hand, the key input apparatus
with the touch panel has to be operated by the finger
15 separated therefrom as described above. In contrast, in
this embodiment, a threshold corresponding to the
amount of capacitance change depending on an operation
load during operation is used, and hence, even when the
finger touches the key region lOa, the key input is not
20 achieved as long as the load at this time is equal to
or smaller than the set threshold. This allows the
operator to perform an input operation while placing
the finger on the key region lOa.
[0070] (2) The input apparatus 1 of this embodiment
25 includes the conductor layer 12 on the surface opposed
to the electrode substrate 20 of the operation member
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28
10. Therefore, unlike a typical touch sensor that
detects capacitive coupling between the finger and the
capacitive sensor, the input apparatus 1 is capable of
detecting an input operation based on the change of the
5 distance between the conductor layer 12 and the
electrode substrate 20. Therefore, even when an input
is performed by the distal edge of the nail or the
finger wearing the glove, the conductor layer 12 causes
desired deformation. Thus, an input operation by the
10 use of the non-conductive operation element can be
performed.
[0071] (3) The input apparatus 1 of this embodiment
uses the thresholds of the amount of capacitance change
for detecting an input operation, .and hence can also
15 partially use the gravity center calculation. This
principle may be used to allow a single capacitive
sensor (first and second capacitive elements Cl, C2) to
be adapted for various types of key layouts. For
example, the layout of a general keyboard is slightly
20 different between Japan and the United States, European
countries, or the like. In the past, it was necessary
to change all the components for the key layout
differences. In this embodiment, at least the sensor
section (electrode substrate 20) can be commonly used.
25 That is, a plurality of types of key tops constituting
a desired key layout can use the common capacitive
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sensor. In this case, a key determination program
complying with the types of key tops only needs to be
prepared.
[0072] (4) The input apparatus 1 of this embodiment
5 basically performs detection by the use of the N*M~S
number of capacitive sensors using a combination of N
and M sensor channels. The number of S may be larger
than the number of necessary keys. Alternatively, for
example, two or more capacitive sensors may be assigned
10 for a key larger than a typical key size, for example,
a "Space" key, ''Enter" key, or "Shift'' key. Further-,
for a region in which the key positions are slightly
different depending on the individual key layouts for
the purpose of allowing them to be adapted for the
15 plurality of key layouts, it is possible to set the
position and number of sensors such that an accurate
key determination can be performed in each of the key
layouts.
[0073] Due to the four characteristics described
20 above, the input apparatus 1 of this embodiment has the
following advantages, for example.
[0074] [1] According to this embodiment, the
operation member 10, the electrode substrate 20, and
the support 30 are basically formed of a laminate of
25 thin film materials, and hence the entire input
apparatus 1 can be thin.
SP352383W000
30
[0075] [2] According to this embodiment, the key
determination is performed based on the change of the
distance between the operation member 10 and the
electrode substrate 20, using the support 30 including
5 the space 32, and hence it is possible to identify the
touch and switch. Further, the threshold of the switch
at this time can be freely set by changing parameters
of the program, and hence the switch load sensitivity
of the input apparatus can be easily changed. In
10 addition, customizing, for example, changing the load
sensitivity of a particular key can be easily performed.
[0076] [3] According to this embodiment, even a
minute load operation causes a change of capacitance in
the electrode substrate 20, and hence information being
15 operated can be obtained even if it is equal to or
smaller than the threshold of the switch-on
determination. With this, an input using a gesture
motion or the like becomes also possible.
[0077] [4] According to this embodiment, the
20 capacitive sensors can be arranged according to the key
layout. Regarding the differences of the key layouts,
the common electrode substrate 20 can be used by
selecting a program.
[0078] [5] According to this embodiment, the key
25 input instruction is carried out when the amount of
capacitance change equivalent to the key input is
SP352383WOOO
31
detected. However, even if no change of capacitance
equivalent to the key input is caused, it is possible
to generate data on the change of capacitance. Using
the data on the minute change of capacitance, for
5 example, it is possible to display information on a key
as a press target on the screen, issue sound
10
immediately before the key input, or change the size of
the display. With this, a new usability can be realized.
[0079] (Action of This Embodiment)
In the keyboard 110 shown in Fig. 7, the operation
surface of the keys 101 is moved in a direction
substantially parallel to a press direction
substantially without bending deformation in response
to an operating force. The key operation surface is
15 supported by an elastic body 104 having a predetermined
spring constant, and hence the amount of movement of
the key 101 depends on a relationship between Lhe load
during operation and the spring constant supporting the
key operation surface. The variation of the amount of
20 movement due to the position in the key region and the
area is designed to be reduced.
[0080] On the other hand, in this embodiment, the
key operation surface itself is also formed of a thin
member (operation member 10) Therefore, with respect
25 to the input apparatus such as the general keyboard,
the key operation surface easily causes the bending
SP352383WOOO
32
deformation due to the operation load as shown in Fig.
8. Therefore, as each shown in the upper, middle, and
lower sections of Fig. 9, the bending state largely
varies depending on the operation position and
5 operation area. Consequently, a variation of the amount
of movement of the key operation surface easily occurs.
In this embodiment, the key determination is performed
based on the level of the amount of capacitance change
due to the amount of movement of the key operation
10 surface, and hence the variation of the amount of
movement of the key operation surface directly leads to
the variation of the key determination. For example,
when the center portion of the key is pressed, the key
is turned on with a small operating force. Meanwhile,
15 when a portion near the corner of the key is pressed, a
larger operation load is required. Due to such a
variation, various inconveniences can occur. For
example, it can be difficult to turn on the key in some
key press positions during input. Further, the key can
20 be unintentionally turned on while a motion of
searching for a key in touch typing is performed. Thus,
it is difficult to optimize the key determination.
[0081] In order to overcome the above-mentioned
problems, in this embodiment, the following
25 countermeasures for the operation member 10, the
electrode substrate 20, and the control unit 60 are
SP352383WOOO
33
carried out. Countermeasure Examples <1> to <4> below
may be separately adopted or a combination of two or
more countermeasure examples may be adopted.
[0082] <1> Reduce the variation of a bending
5 deformation amount with respect to the position and
area of the operation load.
<2> Provide a plurality of capacitance
detection sensors and arrange them by separating the
capacitive sensors into a portion with a large bending
10 deformation amount and a portion with a small bending
deformation amount.
<3> Arrange the plurality of capacitive
sensors in a single key area and determine the switchon
in view of a predetermined calculation of a value
15 detected by each of the capacitive sensors.
20
<4> Determine the switch-on by adding a
determination criteria of a capacitance change' speed
associated with a key press speed.
[0083] (Countermeasure Example <1>)
Fig. 10 shows a detection example of a key
operation state. In the example shown in the upper
section of Fig. 10, the change of capacitance when a
conductor such as a finger F approaches the capacitive
sensor (electrode substrate 20) is detected. In the
25 example shown in the middle section of Fig. 10, the
change of capacitance when the conductor layer 12 of a
SP352383WOOO
34
key operation film pressed by the finger F approaches
the capacitive sensor (electrode substrate 20) is
detected. In the example shown in the lower section of
Fig. 10, the change of capacitance when the finger F
5 and the mesh conductor layer 12 approach the capacitive
sensor (electrode substrate 20) is detected.
[0084] In the example shown in Fig. 10, deformation
due to the operating force occurs only in the key
operation surface. In the case of such a deformation
10 structure, a structure example for reducing the
variation of the bending deformation of the key
operation surface will be explained below.
[0085] The upper section and the lower section of
Fig. 11 are a main-part plan view .of the key operation
15 surface and a cross-sectional view thereof,
respectively. In this embodiment, the support surface
of the key operation surface (operation member 10) lS
configured to be larger than the key region lOa. That
is, the plurality of structures 31 of the support 30
20 are located outside the key region lOa. With this, the
difference of the bending deformation amount between
the center portion and the circumferential portion of
the key region lOa during key operation can be reduced.
Therefore, it is possible to suppress the variation of
25 the detection sensitivity and the erroneous detection
due to the variation of the key input position.
SP352383WOOO
35
[0086] For making it easy for the user to recognize
the key region lOa as the operation region, suitable
display may be performed on the key region lOa.
Alternatively, the structure 31 may be configured to be
5 divided as shown in Fig. 12.
[0087] Figs. 13 and 14 each are a schematic diagram
showing a modified example of the configuration of the
operation member 10. The upper sections of Figs. 13 and
14 are main-part plan views of the key operation
10 surface. The lower sections of Figs. 13 and 14 are
cross-sectional views thereof. In these examples, the
flexural rigidity of the key region is configured to be
higher than the rigidity of the outer peripheral
portion of the key region.
15 [0088] That is, in this embodiment, the operation
member 10 further includes coupling regions 13 that are
supported by the plurality of structures 31 ancl couple
the plurality of key regions lOa to one another. The
coupling regions 13 are set to have flexural rigidity
20 lower than that of the plurality of key regions.
[0089] In the example shown in Fig. 13, the
operation member 10 is configured such that the
thickness of the key region lOa is larger than the
thickness of the outer peripheral portion (coupling
25 region 13) of the key region lOa. In this manner, by
partially changing the flexural rigidity of the key
SP352383WOOO
36
operation surface, it is possible to reduce the amount
of bending of the key region lOal with respect to the
key operation load and make the movement of the key
region lOa toward the electrode substrate 20 closer to
5 parallel movement. In addition, the individual key
regions lOa are formed protruding from the key
operation surface, and hence the user can touch-type.
Thus, it is possible to further improve the operability.
[0090] Examples of the method of providing the key
10 operation surface with a desired step include a method
of freely adding a resin on the key operation surface
by printing, a method using transfer molding a UV resin,
a method of providing a film with concavo-convex
portions by thermally pressing a desired die on a film,
15 and a method using injection molding. In addition, if
the operation member 10 is formed of a metal sheet,
desired concavo-convex portions can be formed by
pressing metal, etching metal, or the like.
[0091] On the other hand, in the example shown in
20 Fig. 14, the operation member 10 is configured such
that the Young's modulus of the key region lOa 1s
larger than the Young's modulus of the outer peripheral
portion (coupling region 13} of the key region lOa.
Also with this configuration, it is possible to reduce
25 the amount of bending of the key region lOa with
respect to the key operation load and make the movement
SP352383WOOO
37
of the key region lOa toward the electrode substrate 20
closer to the parallel movement. In this example, the
arbitrary material layers are laminated on the
predetermined regions in the surface opposed to the
5 electrode substrate 20 of the operation member 10,
which are not supported by the structures 31. However,
the configuration is not limited thereto. The material
layers may be laminated directly under at least the
individual key regions lOa. Further, the same actions
10 can be obtained also by making certain regions
supported by the structure 31 partially thin instead of
laminating the other material layers.
[0092] (Countermeasure Examples <2> and <3>)
The detection method for the input operation in
15 this embodiment is detection of the capacitance change
in the electrode substrate 20 as described above. The
capacitance change due to the deformation when the key
is operated is, strictly speaking, a capacitance change
due to the change of the distance of a conductive
20 surface (conductor layer 12) that influences the
capacitance of the sensor when the key is operated. The
basic stance for the electrode arrangement in this
embodiment is as follows.
[0093] 1: Divide the key operation surface into a
25 region to be easily deformed and a region not to be
easily deformed when an operating force is applied
SP352383WOOO
38
thereon and arrange the sensor electrodes in the
divided regions.
A predetermined determination criteria is added
using data on the change of capacitance of the sensor
5 electrodes arranged as in 1 above.
[0094] In this embodiment, the first and second
capacitive elements Cl, C2 are arranged by separating
the capacitive sensors in the detection regions 20a of
the electrode substrate 20 into a portion with a large
10 bending deformation amount and a portion with a small
bending deformation amount of the key region lOa.
Hereinafter, the actions of this embodiment will be
described as compared with different electrode
arrangement examples.
15 [0095] For example, as shown in the upper section of
Fig. 15, an electrode arrangement example in which, in
the individual detection region 20a (key region lOa),
two capacitive sensors ClO, C20 are separated and
arranged in the left and right is assumed. As shown in
20 the middle left side of Fig. 15, the amount of
capacitance change of the capacitive sensors ClO, C20
is larger in the case where the center portion of the
key region lOa is pressed by the ball of the finger F
as shown on the middle right side of Fig. 15 in
25 comparison with the case where the center portion of
the key region lOa is pressed by the distal edge of the
SP352383WOOO
39
nail of the finger F. This is based on a difference of
opposing areas of the operation member 10 and the
capacitive sensors ClO, C20 as deformed during key
input. Further, as compared with the case where the
5 center portion of the key region lOa is pressed by the
distal edge of the nail of the finger F as shown on the
lower left side of Fig. 15, the amount of capacitance
change of the capacitive sensor C20 is smaller in the
case where the circumferential portion of the key
10 region lOa is pressed by the distal edge of the nail of
the finger F as shown on the lower right side of Fig.
15. This is based on a difference of the key input
position.
[0096] On the other hand, in this embodiment, as
15 shown in the upper section of Fig. 16, the two
capacitive sensors Cl, C2 are separated and arranged in
the center portion and the circumferential portion of
the individual detection region 20a (key region lOa)
Also in this case, the same as the above-mentioned
20 example is obtained. That is, as compared with the case
where the center portion of the key region lOa is
pressed by the distal edge of the nail of the finger F
as shown on the middle left side of Fig. 16, the amount
of capacitance change of the capacitive sensors Cl, C2
25 is larger in the case where the center portion of the
key region lOa is pressed by the ball of the finger F
SP352383WOOO
40
as shown on the middle right side of Fig. 16. Further,
as compared with the case where the center portion of
the key region lOa is pressed by the distal edge of the
nail of the finger F as shown on the lower left side of
5 Fig. 16, the amount of capacitance change of the
capacitive sensor C2 is smaller in the case where the
circumferential portion of the key region lOa is
pressed by the distal edge of the nail of the finger F
as shown on the lower right side of Fig. 16. This is
10 based on a difference of the key input position.
[0097] However, in this embodiment (Fig. 16), the
variation of the amount of capacitance change due to
the difference of the area and the difference of the
position is smaller than that in the comparison example
15 (Fig. 15) and the absolute value of the amount of
capacitance change due to the difference of the input
position is larger. It can be seen from this that,
according to this embodiment, the variation of the
detection sensitivity and the erroneous detection due
20 to the input area and the position can be suppressed.
[0098] Further, in this embodiment, with a small
area, the change of capacitance of the capacitive
sensor Cl located in the key center portion occurs and
the change of capacitance of the capacitive sensor C2
25 located outside is smaller. On the other hand, with a
large area, the change of capacitance of the capacitive
SP352383WOOO
41
sensor Cl is, of course, larger and at the same time
the change of capacitance of the capacitive sensor C2
is also larger. Using such characteristics of the
change of capacitance, the following key determination
5 method becomes possible.
[0099] Assuming that the amount of capacitance
change of the capacitive sensor Cl is denoted by ~Cl
and the amount of capacitance change of the capacitive
sensor C2 is denoted by ~C2, the following example as
10 the determination criteria for input on of the key is
conceivable.
Determination Criteria 1: ~Cl(or ~C2)>S00
Determination Criteria 2: ~Cl-a*~C2>S01
(a: arbitrary coefficient (O)
Figs. 18 and 19 are conceptual diagrams showing an
10 example of the change of capacitance of the capacitive
sensor over time. The speed of the change of
capacitance varies depending on the speed when pressing
the key operation surface. Comparing Fig. 18 with Fig.
19, the key press speed is higher in Fig. 19. As a
15 result, a change of capacitance ~C with respect to a
predetermined time ~t, that is, speed of ~C takes a
larger value in Fig. 19. On the other hand, in the case
where a switch determination value 1 with respect to
the amount of capacitance change is on the dotted line
20 position as in Figs. 18 and 19, due to the amount of
capacitance change, the switch is turned on in Fig. 18
while the switch is not turned on in Fig. 19. In Fig.
19, for example, a motion of hitting the key by the tip
of nail with great force is assumed. However, as can be
25 seen from the figure, even if it is difficult to
perform the switch-on determination only based on the
SP352383WOOO
45
amount of capacitance change, ~C/~t is larger in Fig.
19, and hence the switch-on determination can be
performed by adding the speed determination.
[0108] In view of this, in this embodiment, the
5 following determination criteria is also used.
10
Determination Criteria 3: (~C1/~t) >D1 and
~C1>Switch Determination value 2
[0109] That is, as shown in Fig. 19, the switch-on
is determined if the amount of capacitance change ~Cl
of the capacitive sensor C1 is above "Switch
Determination value 2" and the time rate of change
(/1C1/M) of capacitance of the capacitive sensor C1 is
equal to or larger than a predetermined value Dl. The
same is applicable also to the change of capacitance of
15 the capacitive sensor C2.
20
[0110] Further, for the above-mentioned
determination, a plurality of speed thresholds may be
set as described above, for example.
(~C1/~t)>D1 and ~C1>Switch Determination value 2
(~C1/~t)>D2 and ~C1>Switch Determination value 3
Where D1>D2 and "Switch Determination value
2">"Switch Determination value 3."
[0111]
Fig. 20 shows an input apparatus according to a
25 second embodiment of the present technology. In the
figure, the upper section is a main-part plan view and
SP352383WOOO
46
the lower section is a cross-sectional view thereof.
Hereinafter, components different from those of the
first embodiment will be mainly described, the same
components as the above-mentioned embodiment will be
5 denoted by the same reference symbols, and descriptions
thereof will be omitted or simplified.
[0112] An input apparatus 2 of this embodiment
further includes a base substrate 40 and a second
support 50. The base substrate 40 is provided opposed
10 to an operation member 10 while sandwiching an
electrode substrate 20 therebetween. A conductor layer
42 is provided on a surface opposed to the electrode
substrate 20.
The second support 50 includes a plurality of
15 second structures 51 and a second space 52. The
plurality of second structures 51 connect between the
electrode substrate 20 and the base substrate 10 and
are respectively opposed to a plurality of first
structures 31 while sandwiching the electrode substrate
20 20 therebetween. The second space 52 is formed between
the plurality of second structures 51 and configured to
be capable of changing the distance between the
electrode substrate 20 and the base substrate 40
according to an input operation.
25 In this embodiment, the first supports 31 further
include a plurality of the columnar bodies 34 (third
SP352383WOOO
47
structure) that connect between the electrode substrate
20 and the operation member 10 and are provided in the
first space 32.
[0113] The base substrate 40 has a laminated
5 structure of a base material 41 and the conductor layer
42. The base material 41 and the conductor layer 42 are
configured in the same manner as the base material 11
and the conductor layer 12 of the operation member 10,
respectively. The conductor layer 42 is, for example,
10 connected to a ground potential as in the conductor
layer 12.
[0114] As in the first embodiment, the electrode
substrate 20 includes the detection regions 20a in
which the first and second capacitive elements
15 (capacitive sensor) Cl, C2 are arranged. In this
embodiment, in the electrode substrate 20, the base
material that supports the capacitive elements Cl, C2
is formed of a flexible plastic film. The electrode
substrate 20 is sandwiched between the plurality of
20 first structures 31 and the plurality of second
structures 51 and supported by the plurality of second
structures 51 with respect to the base substrate 40.
The height of the second structures 51 is not
particularly limited, and the first structures 31 may
25 have a larger or lower height. Alternatively, the first
structures 31 may have the same height as the first
SP352383WOOO
48
structures 31.
[0115] The columnar bodies 34 are formed to have the
same height as the first structures 31. Each of the
columnar bodies 34 is typically located in the center
5 portion of each key region lOa. However, it is not
limited thereto. The columnar bodies 34 are formed of,
for example, an ultraviolet curable resin and
manufactured in the same manner as the first sLructures
10
31.
[0116] Fig. 21 is a schematic diagram showing the
action of the input apparatus 2. The upper section of
Fig. 21 is a schematic diagram of deformation when the
center of the key region lOa is pressed. The columnar
body 34 is in the center portion of the key region lOa.
15 Therefore, the distance between the operation member 10
and the electrode substrate 20 hardly change while the
electrode substrate 20 is pressed down toward the base
substrate 40 via,the second space 52. At this time, the
distance between the electrode substrate 20 and the
20 conductor layer 42 of the base substrate 40 is changed
and thus a predetermined capacitance change can be
obtained.
[0117] The lower section of Fig. 21 is a schematic
diagram of deformation when a portion between the
25 circumferential portion and the center portion of the
key region lOa is pressed. At this time, the operation
SP352383WOOO
49
member 10 generates bending deformation between the
first and third structures 31, 33. At the same time,
the electrode substrate 20 is pressed down toward the
base substrate 40 due to a force applied on the
5 columnar body 34. Due to such deformation, the change
of capacitance due to the change of the distance
between the operation member 10 and the electrode
substrate 20 and the change of capacitance due to the
change of the distance between the electrode substrate
10 20 and the base substrate 40 occur at the same time. It
becomes possible to obtain a capacitance change by
adding the two changes of capacitance.
[0118] In this embodiment, the example in which the
single columnar body 34 is provided in each of the key
15 regions lOa is shown. However, a plurality of the
columnar bodies 34 may be provided in each of the key
regions lOa. For example, Fig. 22 shows an exctmple in
which four columnar bodies 34 are provided in a key
region lOa.
20
25
[0119] In addition, also in the operation member 10
of this embodiment, the coupling regions 13 may be
provided for making the flexural rigidity of the key
regions lOa higher than the flexural rigidity in other
regions as shown in Figs. 13 and 14.
[ 012 0 l Although the embodiments of the present
technology have been described above, it is needless to
5
SP352383WOOO
50
say that the present technology is not limited only to
the above-mentioned embodiments and various changes can
be made without departing from the gist of the present
technology.
[0121] For example, in each of the above-mentioned
embodiments, the example shown in Figs. 5 and 6 has
been described as the shape of the electrodes on the
first and second wiring boards 21, 22 constituting the
electrode substrate 20. However, of course, the aspect
10 and shape of the electrodes are not limited thereto.
Another electrode example is shown in Fig. 23.
[0122] The upper section of Fig. 23 s~ows the shape
of an electrode of the first electrode wire 210. The
electrode is formed of a single electrode section 2le
15 formed from the center portion to the circumferential
portion of the detection region 2la. The middle section
of Fig. 23 shows the shape of an electrode of the
second electrode wire 220. The electrode includes a
first electrode section 22el located in the center
20 portion of the detection region 22a and a second
electrode section 22e2 located in a circumferential
portion thereof. The lower section of Fig. 23 shows a
first capacitive element Cl' formed of an electrode
section 21e and an electrode section 22el and a second
25 capacitive element C2' formed of an electrode section
2le and an electrode section 22e2.
SP352383WOOO
51
[0123] Further, in each of the above-mentioned
embodiments, the first and second capacitive elements
Cl, C2 of the electrode substrate 20 are formed of
mutual capacitance type capacitive sensors. However,
5 instead of them, the first and second capacitive
elements Cl, C2 may be formed of self-capacitance type
capacitive sensors. An electrode arrangement example
thereof is shown in Fig. 24.
[0124] The electrode substrate shown in Fig. 24 can
10 be formed of a single base material 20s. In each of the
detection regions 20a, a first electrode section 231
positioned in a center portion of the detection region
20a and a second electrode section 232 positioned
around the first electrode section are arranged and
15 configured to be electrically connectable to the
control unit 60 via electrode wires 230, respectively.
The first electrode section 231 configures a first
capacitive element by capacitive coupling between the
conductor layers 12, 42 of the operation member 10. The
20 second electrode section 232 configures a second
capacitive element by capacitive coupling between the
conductor layers 12, 42 of the operation member 10.
Also with this configuration, the same actions as the
above-mentioned embodiments can be obtained.
25 [0125] It should be noted that the present
technology may also take the following configurations.
'"' ,_, ·---- ----'-- ___ ,__:,.'"'_
5
SP352383WOOO
52
(1) An input apparatus, including:
a deformable, sheet-like operation member
including a plurality of key regions;
an electrode substrate including
a first capacitive element arranged opposed
to each of the plurality of key regions, and
a second capacitive element arranged around
the. first capacitive element, the electrode substrate
being capable of electrostatically detecting a change
10 of a distance from each of the plurality of key
regions; and
a first support including
a plurality of first structures that connect
between the electrode substrate and the operation
15 member, and
a first space that is formed between the
plurality of first structures and capable of changing
the distance between each of the plurality of key
regions and the electrode substrate according to an
20 input operation.
25
(2) The input apparatus according to (1), in which
the first capacitive element is arranged opposed
to a center portion of each of the plurality of key
regions, and
the second capacitive element is arranged opposed
to a circumferential portion of each of the plurality'
SP352383WOOO
53
of key regions.
(3) The input apparatus according to (1) or (2), in
which
the electrode substrate further includes a
5 limitation layer that is provided between the second
capacitive element and the operation member and
partially limits a thickness of the first space.
(4) The input apparatus according to any one of (1) to
(3), in which
10 the operation member further includes a conductor
layer provided on a surface opposed to the electrode
substrate.
(5) The input apparatus according to any one of (1) to
(4), further including
15 a base substrate that is provided opposed to the
20
25
operation member while sandwiching the electrode
substrate therebetween and includes a conductu~ layer
on a surface opposed to the electrode substrate; and
a second support including
a plurality of second structures that connect
between the electrode substrate and the base substrate
and are respectively opposed to the plurality of first
structures while sandwiching the electrode substrate
therebetween, and
a second space that is formed between the
plurality of second structures and capable of changing
SP352383WOOO
54
the distance between the electrode substrate and. the
base substrate according to an input operation, in
which
the first support further includes a plurality of
5 third structures that connect between the electrode
substrate and the operation member and are arranged in
the first space.
(6) The input apparatus according to any one of (1) to
(5), in which
10 the operation member further includes a coupling
region that is supported by the plurality of first
structures and couples the plurality of key regions to
each other, and
the coupling region is formed to have flexural
15 rigidity lower than that of the plurality of .key
regions.
(7) The input apparatus according to (6), in which
the plurality of key regions are formed to have a
thickness larger than that of the coupling region.
20 ( 8) The input apparatus according to any one of (1) to
(7), further including
a control unit that is electrically connected to
the electrode substrate and configured to generate
information on an input operation with respect to each
25 of the plurality of key regions on the basis of outputs
of the first capacitive element and the second
__ ,_ _ ,,_,o,c.· .. _:_.:_ ___ -- - -- ._,~·~· --'--'- --'------'-'-·---- - -· - ----------- ------ -- ---
SP352383WOOO
55
capacitive element.
(9) The input apparatus according to (8), in which
the control unit is configured to output an input
signal if an amount of capacitance change of the first
5 capacitive element is above a first threshold and an
amount of capacitance change of the second capacitive
element is above a second threshold smaller than the
first threshold.
(10) The input apparatus according to (8) or (9), in
10 which
the control unit is configured to output an input
signal if a difference between an amount of capacitance
change of the first capacitive element and an amount of
capacitance change of the second capacitive element is
15 above a predetermined threshold.
(11) The input apparatus according to any one of (8) to
(10), in which
the control unit is configured to output an input
signal if an amount of capacitance change of the first
20 capacitive element is above a first predetermined value
and a time rate of change of capacitance of the first
capacitive element is above a second predetermined
value.
(12) An input apparatus, including:
25 a deformable sheet-like operation member including
a plurality of key regions;
SP352383WOOO
56
an electrode substrate including a capacitive
element that is arranged opposed to each of the
plurality of key regions, the electrode substrate being
capable of electrostatically detecting the change of
5 the distance from each of the plurality of key regions;
and
a first support including
a plurality of first structures that connect
between the electrode substrate and the operation
10 member, and
a first space that is formed between the
plurality of first structures and capable of changing a
distance between each of the plurality of key regions
and the electrode substrate according to an input
15 operation, the operation member further including a
coupling region that is supported by the plurality of
first structures and couples the plurality of key
regions to each other, the coupling region being formed
to have bending rigidity lower than that of the
20 plurality of key regions.
Description of Symbols
[0126]
1, 2 input apparatus
10 operation member
25 lOa key region
12' 42 conductor layer
SP352383WOOO
57
13 coupling region
20 electrode substrate
30' 50 support
31' 51 structure
5 32, 52 space
34 columnar body
40 base substrate
60 control unit
202 limitation layer
10 Cl first capacitive element
C2 second capacitive element
Claims
[1] An input apparatus, comprising:
a deformable, sheet-like operation member
including a plurality of key regions;
5 an electrode substrate including
a first capacitive element arranged opposed
to each of the plurality of key regions, and
a second capacitive element arranged around
the first capacitive element, the electrode substrate
10 being capable of electrostatically detecting a change
of a distance from each of the plurality of key
regions; and
a first support including
a plurality of first structures that connect
15 between the electrode substrate and the operation
member, and
a first space that is formed between the
plurality of first structures and capable of changing
the distance between each of the plurality of key
20 regions and the electrode substrate according to an
input operation.
[2] The input apparatus according to claim 1, wherein
the first capacitive element is arranged opposed
to a center portion of each of the plurality of key
25 regions, and
the second capacitive element is arranged opposed
SP352383WOOO
59
to a circumferential portion of each of the plurality
of key regions.
[3] The input apparatus according to claim 1, wherein
the electrode substrate further includes a
5 limitation layer that is provided between the second
capacitive element and the operation member and
partially limits a thickness of the first space.
[4] The input apparatus according to claim 1, wherein
the operation member further includes a conductor
10 layer provided on a surface opposed to the electrode
substrate.
[5] The input apparatus according to claim 1, further
comprising
a base substrate that is provided opposed to the
15 operation member while sandwiching the electrode
substrate therebetween and includes a conductor layer
on a surface opposed to the electrode substrate; and
a second support including
a plurality of second structures that connect
20 between the electrode substrate and the base substrate
and are respectively opposed to the plurality of first
structures while sandwiching the electrode substrate
therebetween, and
a second space that is formed between the
25 plurality of second structures and capable of changing
the distance between the electrode substrate and the
SP352383WOOO
60
base substrate according to an input operation, wherein
the first support further includes a plurality of
third structures that connect between the electrode
substrate and the operation member and are arranged in
5 the first space.
[6] The input apparatus according to claim 1, wherein
the operation member further includes a coupling
region that is supported by the plurality of l:irst
structures and couples the plurality of key regions to
10 each other, and
15
the coupling region is formed to have flexural
rigidity lower than that of the plurality of key
regions.
[ 7] The input apparatus according to claim 6, wherein
the plurality of key regions are formed to have a
thickness larger than that of the coupling region.
[8] The Jnput apparatus according to claim 1, further
comprising
a control unit that is electrically connected to
20 the electrode substrate and configured to generate
information on an input operation with respect to each
of the plurality of key regions on the basis of outputs
of the first capacitive element and the second
capacitive element.
25 [ 9] The input apparatus according to claim 8, wherein
the control unit is configured to output an input
SP352383WOOO
61
signal if an amount of capacitance change of the first
capacitive element is above a first threshold and an
amount of capacitance change of the second capacitive
element is above a second threshold smaller than the
5 first threshold.
[10] The input apparatus according to claim 8, wherein
the control unit is configured to output an input
signal if a difference between an amount of capacitance
change of the. first capacitive element and an amount of
10 capacitance change of the second capacitive element is
above a predetermined threshold.
[11] The input apparatus according to claim 8, wherein
the control unit is configured to output an input
signal if an amount of capacitance change of the first
15 capacitive element is above a first predetermined value
and a time rate of change of capacitance of the first
capacitive element is above a second predeterrnined
value.
[12] An electronic apparatus, comprising:
20 a deformable sheet-like operation member including
25
a plurality of key regions;
an electrode substrate including
a first capacitive element that lS arranged
opposed to each of the plurality of key regions, and
a second capacitive element that is arranged
around the first capacitive element, the electrode
SP352383WOOO
62
substrate being capable of electrostatically detecting
the change of the distance from each of the plurality
of key regions;
a first support including
5 a plurality of first structures that connect
between the electrode substrate and the operation
member, and
a first space that is formed between the
plurality of first structures and capable of changing a
10 distance between each of the plurality of key regions
and the electrode substrate according to an input
operation; and
a control unit that is electrically connected to
the electrode substrate and configured to generate
15 information ori an input operation with respect to each
of the plurality of key regions on the basis of outputs
of the first capacitive element and the second
capacitive element.
| # | Name | Date |
|---|---|---|
| 1 | Priority Document [24-09-2015(online)].pdf | 2015-09-24 |
| 2 | Power of Attorney [24-09-2015(online)].pdf | 2015-09-24 |
| 3 | Form 5 [24-09-2015(online)].pdf | 2015-09-24 |
| 4 | Form 3 [24-09-2015(online)].pdf | 2015-09-24 |
| 5 | Form 1 [24-09-2015(online)].pdf | 2015-09-24 |
| 6 | Drawing [24-09-2015(online)].pdf | 2015-09-24 |
| 7 | Description(Complete) [24-09-2015(online)].pdf | 2015-09-24 |
| 8 | 8769-DELNP-2015.pdf | 2015-09-28 |
| 9 | 8769-delnp-2015-Form-1-(07-10-2015).pdf | 2015-10-07 |
| 10 | 8769-delnp-2015-Correspondence Others-(07-10-2015).pdf | 2015-10-07 |
| 11 | 8769-delnp-2015-Form-3-(31-12-2015).pdf | 2015-12-31 |
| 12 | 8769-delnp-2015-Correspondence Others-(31-12-2015).pdf | 2015-12-31 |
| 13 | Form 18 [14-02-2017(online)].pdf | 2017-02-14 |
| 14 | 8769-DELNP-2015-FER.pdf | 2020-01-09 |
| 15 | 8769-DELNP-2015-OTHERS [11-03-2020(online)].pdf | 2020-03-11 |
| 16 | 8769-DELNP-2015-FER_SER_REPLY [11-03-2020(online)].pdf | 2020-03-11 |
| 17 | 8769-DELNP-2015-DRAWING [11-03-2020(online)].pdf | 2020-03-11 |
| 18 | 8769-DELNP-2015-CORRESPONDENCE [11-03-2020(online)].pdf | 2020-03-11 |
| 19 | 8769-DELNP-2015-CLAIMS [11-03-2020(online)].pdf | 2020-03-11 |
| 20 | 8769-DELNP-2015-ABSTRACT [11-03-2020(online)].pdf | 2020-03-11 |
| 21 | 8769-DELNP-2015-Power of Attorney-130320.pdf | 2020-03-17 |
| 22 | 8769-DELNP-2015-Correspondence-130320.pdf | 2020-03-17 |
| 23 | 8769-DELNP-2015-PatentCertificate04-10-2023.pdf | 2023-10-04 |
| 24 | 8769-DELNP-2015-IntimationOfGrant04-10-2023.pdf | 2023-10-04 |
| 1 | TPOSEARCH_02-01-2020.pdf |