1. Title of the invention

Manufacture of Electroluminescent Light Emitting Diodes (LED'S) run by Alternating Current (AC)

2. Applicant

Name : Eesavyasa Technologies Pvt Ltd

Nationality : Indian

Address : 108-B, I.D.A. Khanapuram, Khammam(DT), Andhra Pradesh. Pin: 507002

3. Preamble to the description:

Complete specification:

Summary:

In the summary of invention, each important salient feature is explained as follows:

1. Two or more number of materials are taken between acrylic plates which are coated with indium tin oxide. The materials are made up of electroluminescent materials doped with different type of metals like indium, gallium, Copper, silver manganese, yttrium etc. which can make them to form p - type and n- type junction nature materials for example like p - types and n - types silicon semiconductor materials.

2. The p - type of electroluminescent material like zinc or cadmium sulphides, selenides, telluride's are produced by doping with elements that are present a left portion of d- block before zinc and cadmium. For example nano particles of copper, silver, gold, nickel, chromium, yttrium, manganese, etc.

3. The n- type of electroluminescent material like zinc or cadmium sulphides, Selenides, telluride's are produced by doping with elements that are present a right portion of d-block before zinc and cadmium. For example nano particles of element s like indium, aluminum, gallium, germanium, silicon, phosphorous, nitrides, tellurium, led etc, are doped into above discussed electroluminescent materials.

4. Indium gallium or aluminum salts can also be taken by doping with above discussed p- type or n - type electroluminescent materials to produce respective LED'S of p -type and n - type nature depending on the percentage of dopent.

5. Using above type of phosphor based p- type, and n- type materials photo thyristers, photo transistors, laser diodes, photo light controlled rectifiers similar to that of silicon controlled rectifiers, display panels based on RGB colors can also be synthesized like market available LCD and LED display monitors.

4. Description

The present invention is related to concept and production method for manufacturing of photo thyristers, photo transistors, laser diodes, photo light controlled rectifiers similar to that of silicon controlled rectifiers, display panels based on RGB colors can also be synthesized like market available LCD and LED display monitors.

In this method small pixels of RGB's kind of any three colors derived from p-type or n - type junctions made up of electroluminescent materials can be used to construct monitors, TV picture tubes, display systems etc. the materials with p- type or n - type will be sputtered over thin film layer of substrates to produce such semi conducted devices with optical properties. By changing the pattern of arranging these micron layers between two acrylic or ITO coated glass lenses in the order like n- p - n , p-n-p, n-p-n-p or p-n-p-n different electronic components are produced. Due to the ability of electroluminescent materials to function at variable frequencies of alternating current, a wide range of opto devices like capacity proximity sensors can be produced.
Background of invention

Colored high bright LED is the nature of certain semi conductor materials like indium gallium salts like nitrides, phosphates, arsenide's, Aluminides or any other such salts.

When they are doped with electroluminescent materials made with very little quantities of metal dopent like copper, silver, Mn, Au, Al, Yttrium etc, they exhibit various types of colors on passing of direct current. But there is extraordinary need for similar types of devices which can operate on alternate currents.

In this present scenario though many methods are available for synthesis of silicon based semiconductor devices like thyristers, transistors, rectifiers, capacitors etc, there are no such type of devices which can also exhibit optical properties and simultaneously cost effective when compared to conventional LDR's etc.

Hence the present method of production of such devices, vapour deposition of such materials in sputtering chambers are any similar type of methods can be used.

6. Brief description of drawings:

1. Figure 1 indicates p-n-p junction in which p type material is copper, manganese or any other such type of metal doped with electroluminescent materials and n type is electroluminescent material doped with indium, gallium, aluminium, etc, and other metals.

2. Figure 2 indicates n-p-n junction which is also made up of above discussed materials with different type of metal ions to form n-p-n junction.

3. Figure 3 indicates photo light controlled rectifier in which similar type of materials are arranged in the junction p-n-p-n type.

7. Claims

1. We claim that the present invention of using metal doped electroluminescent materials with p - type and n - type classification is a novel method which will pave a road for developing new branch of electronic components with optical properties inherently built by default.

2. We claim that the present application of using such materials can produce photo thyristers and photo transistors which are capable of taking heavy current loads using alternating current.

3. We claim that when metal doped electroluminescent material are place between two acrylic plates or lenses which act as capacitors connected with two copper electrode or graphite or any other wire bond material, such devices can be used as LED's working on AC current. By increasing the frequency over kilo hertz or even more with AC current high bright devices can be obtained.

4. We claim that doped electroluminescent materials with red, green and blue emissions, are arranged in micro pixels array light emitting electroluminescent display (LEED ) devices which can replace computer monitors, TV monitors cell phone displays, touch screens, advertisement display boards etc are produced This method explains about the device construction where ingredients mixing pattern.

5. We claim that with present concept of invention silicon control rectifiers can be given an alternative choice with photo light control rectifier devices.

6. We claim that when the devices made up of these materials are used to produce capacity proximity sensors, with the degree of emitter glow, the degree of capacitance can be measured and used as not only sensor but also quantity indicator.

7. We claim that when this type of optically active Electroluminescent phosphors when simultaneously made layers with piezoelectric materials, different devices which can convert mechanical and electrical signals into light emitting optical display signals, devices of minimal space taking data storage devices, display systems can be produced. They can find their applications in recording movements of minute particles like nano particles in chemical synthesis and biological as well as pathological studies, investigative drug delivery systems.

8. We claim that with appropriate electronic control, light photons collected over surfaces of these materials can be converted into phonons and used as energy generating devices like photovoltaic cells.