After the mold is released (peeled off) from the coating film (sol-gel material layer) 42 on the substrate 40, the coating film is subjected to the main baking (step S6 of Fig. 2). Hydroxyl group and the like contained in the layer of sol-gel material such as silica, which forms the coating film, is desorbed or eliminated by the main baking to further harden (solidify) the coating film. It is preferred that the main baking be performed at temperatures of 200 degrees Celsius to 1200 degrees Celsius for about 5 minutes to 6 hours. Accordingly, the coating film is cured, and thereby the substrate with the concave and convex pattern film which corresponds to the concave and convex pattern of the mold, that is, the substrate in which the sol-gel material layer having the concave and convex pattern is directly formed on the flat substrate, is obtained. In this situation, in a case that the sol-gel material layer is made of the silica, depending on a baking temperature and a baking time, the silica is amorphous, crystalline, or in a mixture state of the amorphous and the crystalline. [0065] The substrate 40 (light extraction substrate), in which the sol-gel material layer 42 having the concave and convex pattern is formed through the roll process, is cleaned. The cleaning is performed to remove foreign substances and the like adhering to the substrate. For example, the substrate is mechanically cleaned in pure water by using a brush such as a roll-brush which is constructed by implanting, in the periphery of a rotational shaft, polypropylene, vinyl chloride, or the like processed to have a linear-shape or a strip-shape, and then an alkaline cleaner and an organic solvent are used to eliminate organic substances and the like. As the alkaline cleaner, it is possible to use, for example, an alkaline organic compound solution which is commercially available as Semico Clean (trade name), ethylamine, diethylamine, ethanolamine, and (2-hydroxyethyl) trimethyl-ammonium hydroxide (choline). As the organic solvent, it is possible to use, for example, acetone and isopropyl alcohol (IPA). [0066] In addition to or instead of the above cleaning methods, ultrasonic cleaning may be performed. The ultrasonic cleaning can be performed, for example, for a few minutes 27 to several tens of minutes by immersing the substrate in alcohols such as isopropyl alcohol, acetone, or the alkaline organic compound solution known, for example, as Semico Clean (trade name). In addition to or instead of the above cleaning methods, a UV/O3 process may be performed. [0067] In the present invention, since the concave and convex pattern of the optical substrate is made of the sol-gel material, the concave and convex pattern is relatively hard, has the resistance to the mechanical cleaning with the brush, and has the corrosion resistance to the alkaline cleaner and the organic solvent. Further, the concave and convex pattern of the sol-gel material 42 is more insusceptible to the ultrasonic cleaning or the UV/O3 process as compared with the curable resin. [0068] Subsequently, a transparent electrode 92 as the first electrode is stacked on the sol-gel material layer 42 on the cleaned substrate 40 to maintain the concave and convex structure formed on the surface of the sol-gel material layer 42 as shown in Fig. 6 (first electrode formation step P2 of Fig. 1). The formation process of the transparent electrode 92 will be explained while referring to Fig. 5(a)-(f). At first, as shown in Fig. 5(a), the film of an electrode material layer 32 forming the transparent electrode 92 is formed on the substrate 40. As the method for forming the film, any conventionally known method such as a vapor deposition method, a sputtering method, a CVD method, and a spray method can be employed as appropriate. Of these methods, the sputtering method is preferably employed from the viewpoint of improving the adhesion property. As the electrode material, for example, indium oxide, zinc oxide, tin oxide, indium-tin oxide (ITO) which is a composite material thereof, gold, platinum, silver, or copper can be used. Of these materials, ITO is preferable from the viewpoint of transparency and electrical conductivity. The thickness of the electrode material layer 32 (therefore, transparent electrode 92) is preferably in a range of 20 to 500 nm. In a case that the thickness is less than the lower limit, the electrical conductivity is more likely to be insufficient. In a case that the thickness exceeds the upper limit, there is possibility that the transparency is so insufficient that emitted EL light cannot be extracted to the outside sufficiently. [0069] After forming the film of the electrode material layer 32 by the sputter method or the like, a photoresist 34 is applied on the electrode material layer 32 (the electrode material layer 32 is coated with a photoresist 34), as shown in Fig. 5(b), in order to form a 28 desired electrode pattern by using a photolithography process (photoetching method). Next, as shown in Fig. 5(c), the photoresist 34 is exposed with UV light etc., via a mask 44 in which the electrode pattern is formed. Next, as shown in Fig. 5(d), the etching is performed on the photoresist 34 by a developer to remove a part of the photoresist 34, thereby exposing a part 32a of the electrode material layer 32. Next, as shown in Fig. 5(e), the exposed part 32a of the electrode material layer 32 is removed by wet etching with an etching liquid (etchant) such as hydrochloric acid to obtain a patterned electrode material layer 32b. Then, by removing the photoresist remaining on the electrode material layer 32b with a resist stripper, the patterned transparent electrode 92 can be obtained as shown in Fig. 5(f). The substrate is exposed to a high temperature of about 300 degrees Celsius at the time of the sputtering. It is desired that the UV/O3 process be performed after cleaning the obtained transparent electrode with the brush and eliminating organic substances and the like by the alkaline cleaner and the organic solvent. The patterned transparent electrode 92 may be obtained by performing the step for forming the film of the electrode material layer 32 after the step for developing the photoresist shown in Fig. 5(d) and then removing the photoresist layer by lift-off (lift-off method). [0070] In the transparent electrode formation step by using the photolithography process, a composition composing the photoresist includes organic substances such as ethyl lactate and propylene glycol methyl ether acetate (PGMEA) as a solvent. As the resist developer, it is used a solution and the like, of which major component is an organic base such as tetramethylammonium hydroxide (TMAH) solution and trimethyl (2-hydroxyethyl) ammonium hydroxide. In the wet etching of the electrode material, it is used an acid solution such as hydrochloric acid and oxalic acid. As the resist stripper, N-methyl-2-pyrrolidone (NMP), dimethylsulfoxide (DMSO), diethylene glycol monobuthyl ether, monoethanolamine, or the like is used. As described above, since the optical substrate with the concave and convex pattern is exposed to the organic solvent and the acid solvent such as the developer and the etching liquid in the transparent electrode formation step, the concave and convex pattern formed in the optical substrate should have the corrosion resistance thereto. In the present invention, since the concave and convex pattern is made of the sol-gel material, even when the organic solvent and the acid solvent are used in the electrode formation step, the concave and convex pattern is not corroded by the solvents. Further, no color deterioration occurs in the concave and convex pattern. The first electrode in the present invention is not limited to the transparent electrode, and 29 the first electrode may be an electrode such as a metal electrode having no permeability to visible light etc., depending on the type of device and/or the use of device. [0071] After the photolithography process, the patterned transparent electrode is subjected to the annealing, so that the crystallinity is increased to reduce a resistance value and improve a transmittance (annealing step P4 of Fig. 1). The annealing is generally performed in a heating furnace for about 10 minutes to 3 hours, and the annealing temperature generally ranges from 160 to 360 degrees Celsius, for example, the annealing temperature is 250 degrees Celsius. In the annealing step, although the optical substrate is exposed to an annealing process at a high temperature of about 250 degrees Celsius, since the sol-gel material layer 42 is usually made of the inorganic materials to have heat resistance, the annealing process has no effect on the sol-gel material layer 42. Finally, the annealed substrate is cleaned. A cleaning method similar to the above-mentioned cleaning method of the optical substrate can be used. For example, the cleaning with the brush and UV/O3 process may be used. [0072] Subsequently, an organic layer 94 as shown in Fig. 6 is stacked on the transparent electrode 92 (thin film formation step P5 of Fig. 1). The organic layer 94 is not particularly limited, provided that the organic layer 94 is usable as an organic layer of the organic EL element. As the organic layer 94, any known organic layer can be used as appropriate. The organic layer 94 may be a stacked body of various organic thin films. For example, the organic layer 94 may be a stacked body of a hole transporting layer 95, a light-emitting layer 96, and an electron transporting layer 97 as shown in Fig. 6. Here, examples of materials of the hole transporting layer 95 include aromatic diamine compounds such as phthalocyanine derivatives, naphthalocyanine derivatives, porphyrin derivatives, N,N'-bis(3-methylphenyl)-(l,r-biphenyl)-4,4'-diamine (TPD), and 4,4'-bis[N-(naphthyl)-N-phenyl-amino]biphenyl(a-NPD); oxazole; oxadiazole; triazole; imidazole; imidazolone; stilbene derivatives; pyrazoline derivatives; tetrahydroimidazole; polyarylalkane; butadiene; and 4,4',4"-tris(N-(3-methylphenyl)N-phenylamino)triphenylamine (m-MTDATA). The materials of the hole transporting layer, however, are not limited thereto. 30 [0073] By providing the light emitting layer 96, a hole injected from the transparent electrode 92 and electron injected from a metal electrode 98 are recombined to occur light emission. Examples of materials of the light emitting layer 96 include metallo-organic complex such as anthracene, naphthalene, pyrene, tetracene, coronene, perylene, phthaloperylene, naphthaloperylene, diphenylbutadiene, tetraphenylbutadiene, coumarin, oxadiazole, bisbenzoxazoline, bisstyryl, cyclopentadiene, and aluminum-quinolinol complex (Alq3); tri-(p-terphenyl-4-yl)amine; l-aryl-2,5-di(2-thienyl) pyrrole derivatives; pyran; quinacridone; rubren; distyrylbenzene derivatives; distyryl arylene derivatives; distyryl amine derivatives; and various fluorescent pigments or dyes. Further, it is preferred that light-emitting materials selected from the above compounds be mixed as appropriate and then are used. Furthermore, it is possible to preferably use a material system generating emission of light from a spin multiplet, such as a phosphorescence emitting material generating emission of phosphorescence and a compound including, in a part of the molecules, a constituent portion formed by the above materials. The phosphorescence emitting material preferably includes heavy metal such as iridium. A host material having high carrier mobility may be doped with each of the light-emitting materials as a guest material to generate the light emission using dipole-dipole interaction (Forster mechanism), or electron exchange interaction (Dexter mechanism). Examples of materials of the electron transporting layer 97 include heterocyclic tetracarboxylic anhydrides such as nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, and naphthaleneperylene; and metallo-organic complex such as carbodiimide, fluorenylidene methane derivatives, anthraquino dimethane and anthrone derivarives, oxadiazole derivatives, and aluminum-quinolinol complex (Alq3). Further, in the oxadiazole derivatives mentioned above, it is also possible to use, as the electron transporting material, thiadiazole derivatives in which oxygen atoms of oxadiazole rings are substituted by sulfur atoms and quinoxaline derivatives having quinoxaline rings known as electron attractive group. Furthermore, it is also possible to use a polymeric material in which the above materials are introduced into a macromolecular chain or the above materials are made to be a main chain of the macromolecular chain. It is noted that the hole transporting layer 95 or the electron transporting layer 97 may also function as the light-emitting layer 96. In this case, there are two organic layers between the transparent electrode 92 and the metal electrode 98. [0074] From the viewpoint of facilitating the electron injection from the metal electrode 31 98, it is allowable to provide, between the organic layer 94 and the metal electrode 98, as an electron injecting layer, a layer made of a metal fluoride such as lithium fluoride (LiF), a metal oxide such as Li2C>3, a highly active alkaline earth metal such as Ca, Ba, or Cs, an organic insulating material, or the like. In addition, from the viewpoint of facilitating the hole injection from the transparent electrode 92, it is allowable to provide, between the organic layer 94 and the transparent electrode 92, as the hole injecting layer, a layer made of triazole derivatives; oxadiazole derivatives; imidazole derivatives; polyarylalkane derivatives; pyrazoline derivatives and pyrazolone derivatives; phenylenediamine derivatives; arylamine derivatives; amino-substituted chalcone derivatives; oxazole derivatives; styrylanthracene derivatives; fluorenon derivatives; hydrazone derivatives; stilbene derivatives; silazane derivatives; aniline copolymer; or a conductive polymer oligomer, in particular, thiophene oligomer, or the like. [0075] In a case that the organic layer 94 is a stacked body formed of the hole transporting layer 95, the light-emitting layer 96, and the electron transporting layer 97, the thicknesses of the hole transporting layer 95, the light-emitting layer 96, and the electron transporting layer 97 are preferably in a range of 1 to 200 nm, in a range of 5 to 100 nm, and in a range of 5 to 200 nm, respectively. As a method for stacking the organic layer 94, any known method such as a vapor deposition method, a sputtering method, a spin coating method, and a die coating method can be employed as appropriate. [0076] Subsequently, as shown in Fig. 6, the metal electrode 98 as the second electrode is stacked on the organic layer 94 (second electrode formation step P6 of Fig. 1). Materials of the metal electrode 98 are not particularly limited, and a substance having a small work function can be used as appropriate. Examples of the materials include aluminum, MgAg, Mgln, and AlLi. The thickness of the metal electrode 98 is preferably in a range of 50 to 500 nm. In a case that the thickness is less than the lower limit, the electrical conductivity is more likely to be decreased. In a case that the thickness exceeds the upper limit, there is possibility that the repair or restoration is difficult when a short circuit between electrodes occurs. Any known method such as a vapor deposition method and a sputtering method can be adopted to stack the metal electrode 98. Accordingly, the organic EL element 200 having the structure as shown in Fig. 6 can be obtained. [0077] After the second electrode formation step, it is allowable to perform a step of 32 sealing the organic EL element 200 by using a sealing material to prevent deterioration due to moisture and/or oxygen; a step of cutting a panel of the organic EL element 200 as appropriate (scribe-and-break step); and/or a step of putting a polarizing plate to take a measure against specular reflection of the metal electrode. [0078] In the above embodiment, the explanation has been given by citing the manufacture of the organic EL element as an example. The present invention, however, can be applied to a method for manufacturing another device such as a solar cell. For example, in a case that the solar cell is manufactured, the steps PI to P4 (i.e., the substrate formation step PI, the cleaning step P2, the first electrode formation step S3, and the annealing step P4) may be substantially the same as those of the manufacturing process of the organic EL element. However, in the film formation step P5, depending on the type of the solar cell, it is formed a thin film including, for example, thin-film silicon using polysilicon and/or compound semiconductor; organic semiconductor; and a dye-sensitized structure in which an electrolyte layer is provided for semiconductor. In the second electrode formation step P6, the transparent electrode and/or metal electrode is/are formed. [0079] Although the sol-gel material curable by heating is used in the method for manufacturing the optical substrate of the above embodiment, instead of this, it is allowable to use a photo-curable sol-gel material. In such a case, it is possible to adopt, for example, a method in which photo-acid generator such as hexafluorophosphate aromatic sulfonium salt which generates acid by light is used, or a method in which chemical modification (chelation) is caused by adding P-diketone represented by acetylacetone to a sol solution and the chemical modification is removed by being irradiated with light. In a case that the photo-curable sol-gel material is used for the sol-gel material layer, after the mold is pressed against the coating film (sol-gel material layer) in the transfer step, the coating film may turn into a gel (be cured) by being irradiated with light instead of the pre-baking of the coating film. Further, in the main baking step, after the mold is released from the coating film on the substrate, the coating film can be cured by being irradiated with light instead of the main-baking of the coating film. [0080] In addition to the manufacture of the organic EL and the solar cell, the method for manufacturing the device of the present invention can be applied to any device, provided that the device is manufactured through the steps PI to P6 (i.e., the substrate formation step PI, the cleaning step P2, the first electrode formation step S3, the annealing step P4, the 33 thin film formation step P5, and the second electrode formation step S6). For example, the method for manufacturing the device of the present invention can be applied to the manufacture of a liquid crystal display and a touch panel. [0081] It was prepared a block copolymer produced by Polymer Source Inc., which was made of polystyrene (hereinafter referred to as "PS" in an abbreviated manner as appropriate) and polymethyl methacrylate (hereinafter referred to as "PMMA" in an abbreviated manner as appropriate) as described below. Mn of PS segment= 868,000 Mn of PMMA segment= 857,000 Mn of block copolymer = 1,725,000 Volume ratio between PS segment and PMMA segment (PS:PMMA)= 53:47 Molecular weight distribution (Mw/Mn)= 1.30 Tg of PS segment= 96 degrees Celsius Tg of PMMA segment= 110 degrees Celsius [0095] The volume ratio of the first polymer segment and the second polymer segment (first polymer segment: second polymer segment) in each block copolymer was calculated on the assumption that the density of polystyrene was 1.05 g/crn , the density of polymethyl methacrylate was 1.19 g/ cm . The number average molecular weights (Mn) and the weight average molecular weights (Mw) of polymer segments or polymers were measured by using gel permeation chromatography (Model No: "GPC-8020" manufactured by Tosoh Corporation, in which TSK-GEL SuperHlOOO, SuperH2000, SuperH3000, and SuperH4000 were connected in series). The glass transition temperatures (Tg) of polymer segments were measured by use of a differential scanning calorimeter (manufactured by Perkin-Elmer under the product name of "DSC7"), while the temperature was raised at a rate of temperature rise of 20 degrees Celsius/min over a temperature range of 0 degrees Celsius to 200 degrees Celsius. The solubility parameters of polystyrene and polymethyl methacrylate were 9.0 and 9.3, respectively (see Kagaku Binran Ouyou Hen (Handbook of Chemistry, Applied Chemistry), 2nd edition). [0096] Toluene was added to 150 mg of the block copolymer and 38 mg of Polyethylene Glycol 4000 manufactured by Tokyo Chemical Industry Co., Ltd. (Mw= 3000, Mw/Mn= 1.10) as polyethylene oxide so that the total amount thereof was lOg, followed by dissolving them. Then, the solution was filtrated or filtered through a membrane filter having a pore diameter of 0.5 um to obtain a block copolymer solution. The obtained block copolymer solution was applied, on a polyphenylene sulfide film (TORELINA 40 manufactured by TORAYINDUSTRIRES, INC.) as a base member, in a film thickness of 200 to 250 nm, by spin coating. The spin coating was performed at a spin speed of 500 rpm for 10 seconds, and then performed at a spin speed of 800 rpm for 30 seconds. The thin film formed by the spin coating was left at room temperature for 10 minutes until the thin film was dried. [0097] Subsequently, the base member on which the thin film was formed was heated for 5 hours in an oven of 170 degrees Celsius (first annealing process). Concavities and convexities were observed on a surface of the heated thin film, and it was found out that micro phase separation of the block copolymer forming the thin film was caused. [0098] The thin film heated as described above was subjected to an etching process as described below to selectively decompose and remove PMMA on the base member. The tfiin film was irradiated with ultraviolet rays at an irradiation intensity of 30J/cm (wavelength of 365 nm) by use of a high pressure mercury lamp. Then, the thin film was immersed in acetone, and was subjected to cleaning with ion-exchanged water, followed by being dried. As a result, there was formed, on the base member, a concave and convex pattern clearly deeper than the concavities and convexities which appeared on the surface of the thin film by the heating process. [0099] Next, the base member was subjected to a heating process (second annealing process) for 1 hour in an oven of 140 degrees Celsius so that the concave and convex pattern formed by the etching process was deformed to have a chevron-shaped structure (process for forming a shape of chevrons). [0100] A thin nickel layer of about 10 nm was formed as a current seed layer by sputtering on the surface of the thin film, for which the process for forming the shape of chevrons had been performed. Subsequently, the base member with the thin film was subjected to an electroforming process (maximum current density: 0.05A/cm2) in a nickel sulfamate bath at a temperature of 50 degrees Celsius to precipitate nickel until the thickness of nickel became 250 um. The base member with the thin film was mechanically peeled off from the nickel electroforming body obtained as described above. Subsequently, the nickel electroforming body was immersed in Chemisol 2303 manufactured by The Japan Cee-Bee Chemical Co., Ltd., followed by being cleaned while being stirred for 2 hours at 50 degrees Celsius. Thereafter, polymer component(s) adhering to a part of the surface of the electroforming body was(were) removed by repeating the following process three times. That is, the nickel electroforming body was 41 coated with an acrylic-based UV curable resin; and the acrylic-based UV curable resin coating the nickel electroforming body was cured; and then the cured resin was peeled off. [0101] Subsequently, the nickel electroforming body was immersed in OPTOOL HD-2100TH manufactured by Daikin Industries, Ltd. for about 1 minute and was dried, and then stationarily placed overnight. The next day, the nickel electroforming body was immersed in OPTOOL HD-TH manufactured by Daikin Industries, Ltd. to perform an ultrasonic cleaning process for about 1 minute. Accordingly, a nickel mold (nickel substrate) for which a mold-release treatment had been performed was obtained. [0102] Subsequently, a PET substrate (easily-adhesion PET film manufactured by Toyobo Co., Ltd., product name: COSMOSHINE A-4100) was coated with a fluorine-based UV curable resin. Then, the fluorine-based UV curable resin was cured by irradiation with ultraviolet rays at 600 mJ/cm2, with the obtained nickel mold being pressed against the PET substrate. After curing of the resin, the nickel mold was peeled off from the cured resin. Accordingly, a diffraction grating mold made of the PET substrate with the resin film to which the surface profile of the nickel mold was transferred was obtained. [0103] The glass substrate with the pattern made of the sol-gel material layer as the diffraction grating obtained as described above was cleaned with a brush in pure water to remove foreign matter and the like adhering thereto. Then, organic matter and the like adhering to the glass substrate was removed by ultrasonic cleaning by use of Semico Clean as an alkaline cleaner and IPA as an organic solvent. A transparent electrode was formed on the cleaned substrate by patterning as follows (see Fig. 5(a)-(f)). At first, a film of ITO having a thickness of 120 nm was formed by a sputtering method at a temperature of 300 degrees Celsius. Then, the ITO film was coated with a photoresist (produced by TOKYO OHKA KOGYO CO., LTD., TFR-H) by the spin coating method, and exposure was performed with light having the wavelength of 365 nm via a mask pattern for the transparent electrode. Thereafter, the exposed portion of the photoresist was removed by etching by use of 2.5 % concentration TMAH solution as a developer, so that a part of ITO is exposed. Next, the exposed area of ITO was removed by using 18 % concentration hydrochloric acid as an etching liquid. Finally, the residual photoresist was removed by using a mixed solution of DMSO and NMP (DMSO:NMP = 1:1) as stripper. Accordingly, the transparent electrode having the predetermined pattern was obtained. After cleaning the obtained substrate having the transparent electrode with the brush and then removing the organic matter and the like adhering to the substrate by the ultrasonic cleaning using the organic solvent (IPA), the UV/O3 process was performed and the substrate was put in the heating furnace heated to 250 degrees Celsius to perform the annealing process for 20 45 minutes in the ambient atmosphere. [0111] On the transparent electrode processed as described above, a hole transporting layer (4,4',4" tris(9-carbazole)triphenylamine, thickness: 35 nm), a light emitting layer (tris(2-phenylpyridinato)iridium(ni) complex-doped 4,4',4"tris(9-carbazole)triphenylamine, thickness: 15 nm; tris(2-phenylpyridinato)iridium(ni) complex-doped l,3,5-tris(N-phenylbenzimidazole-2-yl)benzene, thickness: 15 nm), an electron transporting layer (l,3,5-tris(N-phenylbenzimidazole-2-yl)benzene, thickness: 65 nm), and a lithium fluoride layer (thickness: 1.5 nm) were each stacked by a vapor deposition method. Further, a metal electrode (aluminum, thickness: 50 nm) was formed as the uppermost layer by a vapor deposition method. Accordingly, the organic EL element as shown in Fig. 6 was obtained. [0112] The directivity of light emission of the organic EL element obtained in this example was evaluated by the following method. That is, the organic EL element in a luminescent state was visually observed in all the directions (directions of all around 360°). Neither particularly bright sites nor particularly dark sites were observed when the organic EL element obtained in this Example was observed in any of the directions of all around 360°, and the brightness was uniform in all the directions. In this way, it was shown that the directivity of light emission of the organic EL element of the present invention was sufficiently low. [0113] In Example 1, the temperature at the time of forming the film of the transparent electrode (ITO) of the organic EL element was 300 degrees Celsius. Although it is allowable that the temperature at the time of forming the film of the transparent electrode is lower than 300 degrees Celsius, the transparent electrode is desired to have low resistivity, and the film formation is preferably performed at high temperature to increase crystallinity. In a case that the temperature during the film formation is low, which is about 100 degrees Celsius, the ITO film formed on the substrate is relatively amorphous and has inferior specific resistance, and an adhesion property between the substrate and the ITO thin film is inferior. Although the concave and convex pattern formed of a general UV curable resin and the like has difficulty in withstanding a film formation process at high temperature, the use of sol-gel material which is an example of ceramic allows the concave and convex pattern go through the film formation process at high temperature. Therefore, the method of the present invention is also suitable for the manufacture of the 46 substrate (diffraction grating) for the organic EL element. Further, in a case that the curable resin as described above is kept for a long period under high temperature because of, for example, the generation of heat at the time of emitting light, there is fear that the curable resin deteriorates to cause yellow discoloration and/or generate gas. Thus, it is difficult to use the organic EL element using the resin substrate for a long period of time. In contrast, the organic EL element provided with the substrate made of the sol-gel material is less likely to deteriorate. [0114] [Example 2] A diffraction grating substrate was manufactured in the same manner as Example 1, except that the pressing roll, which was heated to 150 degrees Celsius, was used. As a result, the pattern transfer could be performed similarly to Example 1, and it was confirmed that the average value of the depth distribution of the concave and convex pattern in the diffraction grating substrate was 56 run and the average pitch was 420 nm. [0115] [Example 3] In this Example, a diffraction grating substrate in which the concave and convex pattern was formed of the sol-gel material (hereinafter referred to as "sol-gel pattern substrate") and a diffraction grating substrate in which the same concave and convex pattern was formed of resin (hereinafter referred to as "resin pattern substrate") were prepared respectively. Then, the sol-gel pattern substrate was compared with the resin pattern substrate with respect to the resistance to cleaning, chemicals, and heat in the manufacturing process of the organic EL element, and results thereof were verified. As the sol-gel pattern substrate, the diffraction grating substrate manufactured in Example 1 was used. The resin pattern substrate was manufactured as follows. A soda-lime glass substrate of 15 x 15 x 0.11 cm was coated with a fluorine-based UV curable resin. Then, the fluorine-based UV curable resin was cured by irradiation with ultraviolet rays at 600 mJ/cm2, with the diffraction grating mold manufactured in Example 1 being pressed against the substrate. After curing of the resin, the diffraction grating mold was peeled off from the cured resin. Accordingly, the resin pattern substrate to which the surface profile of the diffraction grating mold was transferred was obtained. [0116] The sol-gel pattern substrate and the resin pattern substrate prepared as described above were subjected to processes simulating the cleaning process, the photolithography 47 process, the ITO etching process, the photoresist stripping step, and the annealing step, those of which were performed before the thin film formation step in the manufacturing process of the organic EL element. Then, the concave and convex pattern on each of the substrates before and after each of the processes was observed. Although the transparent electrode layer, etc., is stacked on the substrate in the actual manufacturing process of the organic EL element, in order to examine the effects of chemicals and environmental temperature on the substrate in each of the processes, no layer was stacked on the substrate and the substrate was exposed to various environments in the following processes. [0117] (1) Cleaning step In order to evaluate the resistance of each of the diffraction grating substrates (the sol-gel pattern substrate and the resin pattern substrate) in the cleaning step performed before the thin film formation step, the following three cleaning experiments were performed on the sol-gel pattern substrate and the resin pattern substrate. [0118] An ultrasonic washer or cleaner (produced by Kokusai Denki LTec:KK) was filled with isopropyl alcohol (EPA), and each of the sol-gel pattern substrate and the resin pattern substrate was immersed in the isopropyl alcohol to be cleaned for 20 minutes at output power of 200 W under room temperature. Subsequently, acetone was used as a cleaning liquid instead of the isopropyl alcohol to perform the ultrasonic cleaning of each of the sol-gel pattern substrate and the resin pattern substrate under the similar conditions of those of the case using the isopropyl alcohol. Further, Semico Clean 56 was used as the cleaning liquid instead of the isopropyl alcohol, and each of the sol-gel pattern substrate and the resin pattern substrate was immersed in Semico Clean 56 to be subjected to the ultrasonic cleaning for 10 minutes at output power of 200 W under room temperature. [0119] The sol-gel pattern substrate and the resin-pattern substrate were each cleaned by using a small single-substrate brush cleaner (produced by IMAI SEISAKUSHO Co., Ltd.). A roll brush in which nylon having diameter of 100 jam was put into the surface of a roll was used as the brush. The cleaning with the brush was performed under the following 48 conditions: rotation speed of the roll brush of 500 rprn; pressure of the roll brush against the substrate of 0.2 MPa; and a substrate transport speed of 1 m/min. Pure water was used as cleaning water and two roll brushes were used. [0120] The sol-gel pattern substrate and the resin pattern substrate were each accommodated in a UV/03 cleaner (PL16-110: SEN LIGHTS CORPORATION). Then, ozone was generated by UV light (wavelengths: 184.9 nm, 253.7 nm) by use of a low pressure mercury lamp and each of the substrates was irradiated with UV light at 15 mW/cm2 for 10 minutes. [0121] (2) Photolithography step In order to examine the resistance of the sol-gel pattern substrate and the resin pattern substrate in the photolithography step, a beaker was filled with ethyl lactate included in the photoresist, and each of the sol-gel pattern substrate and the resin pattern substrate was immersed in the ethyl lactate for 20 minutes under room temperature. Further, a similar experiment was carried out by using PGMEA instead of the ethyl lactate. Furthermore, in order to examine the resistance of the sol-gel pattern substrate and the resin pattern substrate to a photoresist developer, each of the sol-gel pattern substrate and the resin pattern substrate was immersed in 2.5% of TMAH as the developer for 20 minutes under room temperature. [0122] (3) ITO etching step In order to examine the resistance of the sol-gel pattern substrate and the resin pattern substrate in the step of etching and patterning an ITO electrode material, each of the substrates was immersed in 18% of hydrochloric acid for 20 minutes at ordinary temperature. [0123] (4) Resist stripping step In order to examine the resistance of the sol-gel pattern substrate and the resin pattern substrate to the stripper used in the step of stripping the remaining photoresist in the lithography step, each of the substrates was immersed in NMP for 20 minutes at ordinary temperature. A similar experiment was carried out by using DMSO instead of 49 NMP. [0124] (5) Annealing step In order to examine the resistance of the sol-gel pattern substrate and the resin pattern substrate in the annealing step performed after the patterning of the transparent electrode, each of the substrates was placed in the heating furnace heated to 250 degrees Celsius for 20 minutes in the ambient atmosphere. [0125] In order to evaluate the resistance of the sol-gel pattern substrate and the resin pattern substrate in each of the processes of the five steps, an inspection of unevenness and a SPM inspection were performed on each of the substrates before and after each of the processes. As the inspection of unevenness, the following method was adopted to observe the overall state of the concave and convex pattern on the surface of each of the substrates before and after each of the experiments. [0126] An inspection apparatus 300 shown in Fig. 11 was provided in a dark room, and a substrate 101 (each of the sol-gel pattern substrate and the resin pattern substrate) before and after each of the processes in the above five steps was attached to the inspection apparatus 300 to observe the intensity distribution of scattered light of the substrate under the following conditions. The inspection apparatus 300 includes a stage device 104 on which the substrate 101 is placed; a pair of highly directional LED bar illuminations 122 (produced by CCS Inc., LDL2-119 x 16BL) irradiating the substrate 101 with light; a digital camera 125 taking the image of light reflected from the substrate; and an image processing device 126 performing image processing and analysis of the obtained image. The substrate 101 having a size of 30 mm x 30 mm and a thickness of 0.7 mm was arranged to bridge between extend over a pair of black blocks 102 of the stage device 104, each of black blocks 102 having a rectangular parallelepiped shape. The height of the blocks 102 was 40 mm and the distance between the blocks 102 was 27 mm. The pair of LED bar illuminations 122 had a light-emission central wavelength of 470 nm and an area of light-emitting section of 119 mm x 160 mm. The pair of LED bar illuminations 122 was provided at a position having a height of 160 mm from the floor surface in a state of being inclined toward the floor surface at 10° from a horizontal state. The distance between the two LED bar illuminations 122 was 307 mm. The digital camera 125 was 50 arranged at a position having a distance of 770 mm from the surface of the substrate. Light emission of the pair of LED bar illuminations was performed at a maximum output (each 5.7 W) and an image of the substrate 101 was obtained. The type of the digital camera 125 and the imaging conditions were as follows: Camera: Canon EOS Kiss X3 Lens: EF-S18-55 mm F3.5-5.6 IS Shutter speed: 1/100 seconds ISO sensitivity: 3200 Aperture value: F5.6 White balance: Standard Picture style: Standard Pixel value: 0 to 255 [0127] Blue pixel values were sampled or extracted from the image obtained by the digital camera, and the blue pixel values were displayed as a gray scale. Further, as shown in Fig. 12(a), only the pixel values on a line LI, which extended in an X direction at a substantially central position of the image in a Y direction, were sampled to be outputted as profile of the pixel values with respect to pixel positions in the X direction. Only the pixel values in the portion to be made into the organic EL element (within the frame depicted by broken lines in Fig. 12(a)) were outputted as the cross-section profile. Fig. 12(b) shows an example of profile of the pixel values obtained from the sol-gel pattern substrate with respect to the pixel positions in the X direction. In the example shown in Fig. 12(b), the average pixel value was 113. It has been found out through preliminary test(s) that unevenness of luminance was conspicuous when the diffraction grating substrate, in which the change in average pixel value was 20 % before and after each of the resistance tests, was used in the organic EL element. Therefore, a case in which the change in average pixel value was less than 20 % before and after each of the resistance tests was evaluated as "+" (satisfactory), and a case in which the change in average pixel value was 20 % or more before and after each of the resistance tests was evaluated as "-" (unsatisfactory). The evaluation results are shown in TABLE 1. [0128] In the SPM inspection, the surface condition and depths of concavities and convexities of the concave and convex pattern on the surface of each of the substrates were inspected by use of a scanning microscope. In the SPM inspection, it was used the atomic force microscope (the scanning probe microscope equipped with the environment control 51 unit "Nanonavi II Station/E-sweep" manufactured by Hitachi High-Tech Science Corporation.) used in Example 1. Analysis conditions of the atomic force microscope were the same as those in Example 1. A concavity and convexity analysis image was obtained as described above by performing a measurement in a randomly selected measuring region of 3 um square (length: 3 urn, width: 3 um) in the substrate. Distances between randomly selected concave portions and convex portions in the depth direction were measured at 100 points or more in the concavity and convexity analysis image, and the average of the distances was calculated as the average value (average height) of depth distribution of the concavities and convexities. In a case that the change in average value of depth distribution of the concavities and convexities was 20 % or less as compared with the substrate before each of the resistance tests, the substrate was evaluated to be satisfactory or acceptable. In a case that the change in average value of depth distribution of the concavities and convexities was 20% or more, the substrate was evaluated to be unsatisfactory or defective. Further, in a case that abnormal projections and/or surface roughness, which had not been observed before each of the resistance tests, was/were observed in the image for evaluation, the substrate was evaluated to be unsatisfactory or defective. In a case that no abnormality or defect was observed in the image for evaluation, the substrate was evaluated to be satisfactory or acceptable. The case in which both the average value of depth distribution of the concavities and convexities and the image for evaluation were evaluated to be satisfactory or acceptable, the substrate was evaluated to be satisfactory, which is expressed as "+" and cases other than the above case were evaluated to be satisfactory, which is expressed as "-". The evaluation results are shown in TABLE 1. 52 [0129] Regarding the resin pattern substrate processed by the UV/O3 cleaning in the cleaning step, there were observed that the change in average pixel value was 20 % or more in the observation of unevenness, and that the average value of depth distribution of the concavities and convexities decreased by 20 % or more in the SPM observation. It is assumed that these results were brought about by erosion of the concave and convex pattern of the resin during the UV/O3 cleaning. On the other hand, regarding the sol-gel pattern substrate, no significant difference was found out between observation results before and after the UV/O3 cleaning. In the ITO etching process, it was observed in the SPM observation that the resin pattern substrate had abnormal projections on the concave and convex surface thereof. It is assumed that this result was brought about by generation of abnormal precipitate generated by reaction between the resin and the hydrochloric acid in the ITO etching process. On the other hand, regarding the sol-gel pattern substrate, no significant difference was found out between observation results before and after the ITO etching process. Further, regarding the resin pattern substrate after the annealing process, . there were observed that the change in average pixel value was 20 % or more in the observation of unevenness, and that the average value of depth distribution of the concavities and convexities on the concave and convex surface decreased by 20 % or more in the SPM observation. It is assumed that there results were brought about by melting of a part of the concave and convex pattern of the resin owing to high temperature in the annealing process. On the other hand, regarding the sol-gel pattern substrate, no significant difference was found out between observation results before and after the annealing process. [0130] [Comparative Example 1] The resin pattern substrate manufactured in Example 3 was used as the diffraction grating substrate to produce the organic EL element in the same manner as Example 1. [0131] [Evaluation of light emission efficiency of organic EL element] The light emission efficiency of the organic EL element obtained in each of Example 1 and Comparative Example 1 was measured by the following method. That is, voltage was applied to the obtained organic EL element, and then the applied voltage V and a current I flowing through the organic EL element were measured with a source measurement instrument (manufactured by ADC CORPORATION, R6244), and a total 54 luminous flux amount L was measured with a total flux measurement apparatus manufactured by Spectra Co-op. From the thus obtained measured values of the applied voltage V, the current I, and the total luminous flux amount L, a luminance value L' was calculated. Here, for the current efficiency, the following calculation formula (Fl) was used: Current efficiency = (L'II) x S (Fl) and, for the power efficiency, the following calculation formula (F2) was used: Power efficiency = (L'IW) x S (F2) Accordingly, the current efficiency and the power efficiency of the organic EL element were calculated. In the above formulae, S is a light-emitting or luminescent area of the element. Noted that the value of the luminance L' was calculated on the assumption that light distribution characteristic of the organic EL element followed Lambert's law, and the following calculation formula (F3) was used: L' = LIdS (F3) [0132] The current efficiency of the organic EL element of Example 1 at a luminance of 1000 cd/m2 was 11 1.1 cd/A. Further, the power efficiency of the organic EL element of Example 1 at a luminance of 1000 cd/m2 was 97.7 1mAN. The organic EL element of Comparative Example 1 could not be evaluated as the element, because the resin pattern was broken by mechanical damage at the time of the cleaning with the brush, damage at the time of the UV/03 cleaning, and/or damage caused by heat at the time of the IT0 film formation. ' An organic EL element manufactured on a glass substrate having no pattern was prepared as a comparative sample, and the current efficiency and power efficiency of the organic EL element were measured. As a result, the current efficiency at a luminance of 1000 cd/m2 was 74.5 cd/A, and the power efficiency at the same luminance of 1000 cd/m2 was 58.4 lm/W. [0133] As described above, since the concave and convex pattern of the optical substrate used for the method for manufacturing the device according to the present invention is made of the sol-gel material, this optical substrate has various advantages as compared with the substrate having the concave and convex pattern made of the curable resin, as wil be described below. The sol-gel material has a superior mechanical strength. Thus, even when the cleaning with the brush is performed on the substrate and the surface of the concave and convex pattern after formation of the transparent electrode in the manufacturing process of the organic EL element, damage, the adhesion of foreign matter, the projection on the transparent electrode, and the like are less likely to occur, and it is possible to suppress any element failure (defect of an optical element) which would be otherwise caused by the damage and the like. Therefore, the organic EL element, as the device obtained by the method of the present invention is superior to the organic EL element in which the curable resin substrate is used, in terms of the mechanical strength of the substrate with the concave and convex pattern. [0134] The substrate made of the sol-gel material produced according to the method of the present invention has satisfactory chemical resistance. Therefore, the substrate of the present invention is relatively corrosion-resistant to the alkaline fluid and the organic solvent used in the cleaning steps of the substrate and the transparent electrode, which makes it possible to use various cleaning liquids. Further, the alkaline developer or the acidic etching liquid is sometimes used at the time of the patterning of the transparent substrate as described above, and the substrate of the present invention is also corrosionresistant to such developer and etching liquid. In this respect, the substrate of the present invention has an advantage over the curable resin substrate having relatively low resistance to the alkaline fluid and the acid solution. [0135] The substrate made of the sol-gel material produced according to the method of the present invention has superior heat resistance. Thus, it is also possible to resist a high-temperature atmosphere of the sputtering step in the process for forming the transparent electrode of the organic EL element. Further, the substrate made of the sol-gel material produced according to the method of the present invention is superior to the curable resin substrate in terms of the UV resistance and the weather resistance. Therefore, the substrate of the present invention is also resistant to the UV/O3 cleaning process after the formation of the transparent electrode. Accordingly, by using the substrate made of the sol-gel material, no influence is exerted on the substrate in the processes forming the semiconductor film and the organic film. [0136] In a case that the organic EL element, as the device produced by the method of the present invention, is used outside or outdoors, it is possible to suppress the deterioration due to sunlight as compared with the case in which the curable resin substrate is used. Further, in a case that the curable resin as described above is kept for a long period under high temperature because of, for example, the generation of heat at the time of emitting light, there is fear that the curable resin deteriorates to cause yellow discoloration and/or generate gas. Thus, it is difficult to use the organic EL element using the resin substrate 56 for a long period of time. In contrast, the organic EL element provided with the substrate made of the sol-gel material is less likely to deteriorate. [0137] In the above description, the present invention was explained by using Examples. The manufacturing method and manufacturing apparatus for the optical substrate and the method for manufacturing the device according to the present invention, however, are not limited to the above embodiments, and can be appropriately modified within the range of technical ideas described in the claims. In the above Examples, for example, although the diffraction grating substrate was manually manufactured by using the bar coater, the oven, and the like, the diffraction grating substrate, however, may be manufactured by using the optical substrate manufacturing apparatus as shown in Fig. 4. Further, although the sol-gel material cured by heat was used in the above Examples, instead of mis, the photo-curable sol-gel material may be used. In this case, the coating film (sol-gel material) can be cured by being irradiated with light other than the baking of the coating film. Industrial Applicability [0138] The manufacturing method and manufacturing apparatus for the optical substrate according to the present invention are capable of manufacturing the optical substrate with high throughput while performing the minute pattern transfer accurately and reliably. The method for manufacturing the device according to the present invention utilizes the optical substrate with the minute concave and convex pattern, which is manufactured by the manufacturing method and the manufacturing apparatus according to the present invention and is resistant to the process for manufacturing the element (device) into which the optical substrate is incorporated because the optical substrate with the minute concave and convex pattern has excellent in the heat resistance, the weather resistance, and the corrosion resistance. Therefore, the method for manufacturing the device according to the present invention makes it possible to extend the service life of the element. Accordingly, the method for manufacturing the device according to the present invention can produce, with high throughput, various devices, such as the organic EL element and the solar cell, which are excellent in the heat resistance, the weather resistance, and the corrosion resistance. Reference Signs List: [0139] 57 21: mold feeding roll; 22: pressing roll; 23: peeling roll; 24: mold winding roll; 26: supporting roll; 29: transporting roll; 30: die coater; 32: electrode material layer; 34: photoresist; 35: heat zone; 40: substrate; 42: coating film (sol-gel material layer); 44: mask; 70: roll process apparatus; 72: film feeding roll; 74: nip roll; 76: releasing roll; 78: transporting roll; 80: substrate film; 80a: film-shaped mold; 82: die coater; 85: UV radiation light source; 86: substrate film transporting system; 87: film winding roll; 90: transfer roll; 92: transparent electrode; 94: organic layer; 95: hole transporting layer; 96: light-emitting layer; 97: electron transporting layer; 98: metal electrode; 100: optical substrate manufacturing apparatus; 101: diffraction grating substrate; 102: block; 104: stage device; 120: coating section; 122: LED bar illumination; 125: digital camera; 126: image processing device; 130: substrate transporting section; 140: mold transporting section; 142,144,146: electricity-removing unit; 150: pressing section; 160: releasing section; 200: organic EL element; 300: inspection apparatus 58 We claim: 1. A method for manufacturing an optical substrate having a concave and convex pattern, comprising: a step of preparing a long film-shaped mold having a surface of the concave and convex pattern; a step of forming a coating film made of a sol-gel material on a substrate; a step of transferring the surface of the concave and convex pattern of the film-shaped mold to the coating film by arranging the surface of the concave and convex pattern to face the coating film and pressing a pressing roll against a surface of the film-shaped mold on a side opposite to the surface of the concave and convex pattern; a step of releasing the film-shaped mold from the coating film; and a step of curing the coating film to which the concave and convex pattern has been transferred. 2. The method for manufacturing the optical substrate according to claim 1, wherein the step of curing the coating film includes curing the coating film by baking the coating film. 3. The method for manufacturing the optical substrate according to claim 1 or 2, wherein the step of preparing the long film-shaped mold includes: coating a long film-shaped base member with a concave-convex forming material; performing a roll transfer of the concave and convex pattern to the concave-convex forming material by pressing a transfer roll having the concave and convex pattern against the concave-convex forming material coating the long film-shaped base member while rotating the transfer roll; and curing the concave-convex forming material to which the concave and convex pattern has been transferred through the roll transfer so as to obtain the long film-shaped mold in a roll shape. 4. The method for manufacturing the optical substrate according to claim 3, wherein the film-shaped base member having the cured concave-convex forming material is wound around a film winding roll. 59 5. The method for manufacturing the optical substrate according to claim 3, wherein the concave and convex pattern of the transfer roll is transferred while the film-shaped base member is transported by using a film feeding roll feeding the film-shaped base member and a film winding roll winding or rolling up the film-shaped base member. 6. The method for manufacturing the optical substrate according to claim 4 or 5, wherein the long film-shaped mold in the roll shape wound around the film winding roll moves with being fed to the pressing roll. 7. The method for manufacturing the optical substrate according to any one of claims 1 to 6, wherein the released long film-shaped mold is wound around a mold winding roll. 8. The method for manufacturing the optical substrate according to any one of claims 1 to 7, wherein the pressing roll is pressed against the surface of the film-shaped mold on the side opposite to the surface of the concave and convex pattern while the concave-convex forming material being heated. 9. The method for manufacturing the optical substrate according to any one of claims 1 to 8, wherein the pressed concave-convex forming material is heated in the releasing step or between the transfer step and the releasing step. 10. The method for manufacturing the optical substrate according to any one of claims 1 to 9, wherein the surface of the concave and convex pattern of the long film-shaped mold is successively pressed against coating films on a plurality of substrates with the pressing roll while continuously feeding the long film-shaped mold under the pressing roll and transporting each of the substrates to the pressing roll at a predetermined time interval with the coating film made of the sol-gel material being formed. 11. The method for manufacturing the optical substrate according to any one of claims 1 to 10, wherein the concave and convex pattern of the film-shaped mold is an 60 irregular concave and convex pattern in which an average pitch of concavities and convexities is in a range of 100 to 1500 nm and an average value of a depth distribution of the concavities and convexities is in a range of 20 to 200 nm. 12. An apparatus for manufacturing an optical substrate, comprising: a coating-film forming section configured to form a coating film made of a sol-gel material on a substrate; a substrate transporting section configured to transport the substrate on which the coating film is formed to a predetermined position; a mold transporting section which includes a mold feeding roll configured to feed a long film-shaped mold having a surface of a concave and convex pattern and a mold winding roll configured to wind or roll up the long film-shaped mold, and is configured to transport the film-shaped mold to the predetermined position by continuously feeding the film-shaped mold from the mold feeling roll to the predetermined position and winding the film-shaped mold around the mold wining roll; and a pressing roll rotatably arranged at the predetermined position and configured to press a part of the surface of the concave and convex pattern of the long film-shaped mold, which is fed to the predetermined position by the mold transporting section, against the coating film on the substrate which is transported to the predetermined position by the substrate transporting section. 13. The apparatus for manufacturing the optical substrate according to claim 12, further comprising a peeling roll configured to peel the part of the surface of the concave and convex pattern of the long film-shaped mold pressed with the pressing roll from the coating film on the substrate. 14. The apparatus for manufacturing the optical substrate according to claim 12 or 13, further comprising a heating means configured to heat the coating film on the substrate against which the part of the surface of the concave and convex pattern of the film-shaped mold is pressed. 15. The apparatus for manufacturing the optical substrate according to claim 14, wherein the heating means is a heater provided in the pressing roll. 61 16. The apparatus for manufacturing the optical substrate according to any one of claims 12 to 15, further comprising a heating means configured to heat the coating film when the film-shaped mold is released from the coating film. 17. The apparatus for manufacturing the optical substrate according to any one of claims 12 to 16, further comprising a supporting roll provided at a position to face the pressing roll and configured to support the substrate from a lower side of the substrate. 18. The apparatus for manufacturing the optical substrate according to any one of claims 12 to 17, wherein the coating-film forming section includes a substrate stage configured to move the substrate while holding the substrate. 19. The apparatus for manufacturing the optical substrate according to any one of claims 12 to 18, wherein the concave and convex pattern of the film-shaped mold is an irregular concave and convex pattern in which an average pitch of concavities and convexities is in a range of 100 to 1500 nm and an average value of a depth distribution of the concavities and convexities is in a range of 20 to 200 nm. 20. The apparatus for manufacturing the optical substrate according to any one of claims 12 to 19, further comprising a roll process apparatus configured to form the long film-shaped mold, the roll process apparatus including: a transporting system configured to transport a substrate film; a coating unit configured to coat the substrate film being transported with a concave-convex forming material; a transfer roll provided on a downstream side of the coating unit and configured to transfer the concave and convex pattern to the concave-convex forming material; and a radiation light source configured to emit light to the substrate film. 21. The apparatus for manufacturing the optical substrate according to claim 20, wherein the transporting system includes a film feeding roll configured to feed the substrate film; a nip roll configured to urge the substrate film toward the transfer roll; a releasing roll configured to facilitate releasing of the substrate film from the transfer roll; and a film winding roll configured to wind or roll up the substrate film to which the 62 concave and convex pattern has been transferred. 22. The apparatus for manufacturing the optical substrate according to claim 21, wherein the film winding roll around which the substrate film is wound is used as the mold feeding roll configured to feed the film-shaped mold. 23. A method for manufacturing a device provided with an optical substrate having a concave and convex pattern, comprising: a substrate formation step of forming a substrate with a predetermined concave and convex pattern by coating the substrate with a sol-gel material and transferring the concave and convex pattern to the sol-gel material coating the substrate; a cleaning step of cleaning the substrate with the concave and convex pattern; a first electrode formation step of forming a first electrode on the cleaned substrate by patterning; an annealing step of annealing the substrate on which the first electrode is formed; a thin film formation step of forming a thin film on the first electrode; and a second electrode formation step of forming a second electrode on the thin film. 24. The method for manufacturing the device according to claim 23, wherein at least one of ultrasonic cleaning, cleaning with a brush, and UV/O3 cleaning is performed in the cleaning step. 25. The method for manufacturing the device according to claim 23 or 24, wherein the patterning is performed by using an acid solvent or an alkaline solvent, and the patterning includes formation of a first electrode layer, resist coating, exposure and development, etching of the first electrode layer, and stripping of the resist. 26. The method for manufacturing the device according to any one of claims 23 to 25, wherein the annealing is performed at a temperature in a range of 160 degrees Celsius to 360 degrees Celsius. 27. The method for manufacturing the device according to any one of claims 23 to 26, wherein the device is an organic EL element, the first electrode is a transparent 63 electrode, the thin film includes an organic layer, and the second electrode is a metal electrode. 28. The method for manufacturing the device according to any one of claims 23 to 27, wherein the device is a solar cell, the first electrode is a transparent electrode, the thin film includes a semiconductor layer, and the second electrode is a metal electrode. 29. The method for manufacturing the device according to any one of claims 23 to 28, wherein the concave and convex pattern formed on the substrate is an irregular concave and convex pattern used for scattering or diffracting light in which an average pitch of concavities and convexities is in a range of 100 to 1500 nm and an average value of a depth distribution of the concavities and convexities is in a range of 20 to 200 nm. 30. The method for manufacturing the device according to any one of claims 23 to 29, wherein the substrate is a glass substrate and the sol-gel material includes a silica precursor. 31. The method for manufacturing the device according to any one of claims 23 to 30, further comprising baking of the sol-gel material at a temperature of 300 degrees Celsius or more after coating the substrate with the sol-gel material and transferring the predetermined concave and convex pattern to the so-gel material coating the substrate. 32. The method for manufacturing the device according to any one of claims 23 to 31, wherein the substrate formation step includes: a step of preparing a long film-shaped mold having a surface of the concave and convex pattern; a step of forming a coating film made of the sol-gel material on the substrate; a step of transferring the surface of the concave and convex pattern of the film-shaped mold to the coating film by arranging the surface of the concave and convex pattern of the film-shaped mold to face the coating film and pressing a pressing roll against a surface of the film-shaped mold on a side opposite to the surface of the concave and convex pattern; a step of releasing the film-shaped mold from the coating film; and 64 a step of baking the coating film to which the concave and convex pattern has been transferred. 65