"Memory Element And Memory Device"

Abstract: Provided are a memory element and a memory device with which the frequency of a repeated operation can be increased, and the balance is excellent between the performance capabilities of a high-speed operation for writing and deletion and the characteristics of resistance value retention during the high-speed operation. A memory layer 5 is provided with an ion source layer 3. The ion source layer 3 includes Zr (zirconium), Cu (copper), and Al (aluminum) as a metal element together with an ion conductive material such as S (sulfur), Se (selenium), and Te (tellurium) (chalcogen element). The amount of Al in the ion source layer 3 is 30 to 50 atomic percent. The amount of Zr is preferably 7.5 to 25 atomic percent, and more preferably, the composition ratio of Zr to the chalcogen element in total included in the ion source layer (= Zr (atomic percent)/ chalcogen element in total (atomic percent)) falls within a range from 0.2 to 0.74.

Patent Information

Application #

Filing Date

23 February 2011

Publication Number

49/2011

Publication Type

INA

Invention Field

ELECTRICAL

Status

Email

Parent Application

Applicants

SONY CORPORATION

1-7-1 KONAN, MINATO-KU, TOKYO, JAPAN

Inventors

1. KAZUHIRO OHBA

C/O SONY CORPORATION, 1-7-1 KONAN, MINATO-KU, TOKYO, JAPAN

2. TETSUYA MIZUGUCHI

C/O SONY CORPORATION, 1-7-1 KONAN, MINATO-KU, TOKYO, JAPAN

3. SHUICHIRO YASUDA

C/O SONY CORPORATION, 1-7-1 KONAN, MINATO-KU, TOKYO, JAPAN

Specification

Documents

Application Documents

#	Name	Date
1	1310-delnp-2011-GPA.pdf	2011-10-01
2	1310-delnp-2011-Form-5.pdf	2011-10-01
3	1310-delnp-2011-Form-3.pdf	2011-10-01
4	1310-delnp-2011-Form-2.pdf	2011-10-01
5	1310-delnp-2011-Form-1.pdf	2011-10-01
6	1310-delnp-2011-Drawings.pdf	2011-10-01
7	1310-delnp-2011-Description (Complete).pdf	2011-10-01
8	1310-delnp-2011-Correspondence-others.pdf	2011-10-01
9	1310-delnp-2011-Claims.pdf	2011-10-01
10	1310-delnp-2011-Abstract.pdf	2011-10-01
11	1310-delnp-2011-Form-18-(23-07-2012).pdf	2012-07-23
12	1310-delnp-2011-Correspondence-Others-(23-07-2012).pdf	2012-07-23
13	1310-DELNP-2011-FER.pdf	2017-04-13
14	1310-DELNP-2011-AbandonedLetter.pdf	2017-11-13

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