BACKGROUND
The disclosure relates generally to high temperature
semiconductor devices, and more specifically, to semiconductor devices for transient
voltage suppression integrated with wiring components.
Lightning strikes or other sources of transient voltage that
may be induced onto electrical wires or components tend to damage equipment, often
times rendering the equipment inoperable. Electronic means of blocking electrical
voltage spikes caused by the lightning or transient voltage are often used to mitigate
the effects of the voltage spikes. Other means shunt the spike energy to ground,
permitting the spike energy to bypass the potentially affected equipment. Lightning
strikes protection is important in systems such as airframe, aircraft engines, unmanned
vehicles, wind turbines, power generation and power distribution and transmission.
However, such electronic components used to block or shunt the voltage spikes are
relatively large, which takes up valuable space on circuit boards and in enclosures on,
for example, an aircraft or in an aircraft engine controller, such as, but not limited to,
a full authority digital engine (or electronics) control (FADEC). The relatively large
components also represent an undesirable amount of weight that must be carried by
the aircraft. Moreover, the semiconductor material, typically, a form of silicon, used
to fabricate the transient voltage suppression devices are limited to relatively cool
ambient environments, where their leakage currents are low, for example, locations
with an ambient temperature less then approximately 125°C. At least some known
TVS systems attempt to provide protection from electrical voltage spikes caused by
the lightning or transient voltage using components mounted at a centralized
computing or control system for equipment being protected. One example of a central
computing or control system is a full authority digital engine (or electronics) control
(FADEC) used with some aircraft engines. The FADEC typically are located on the
fan of the engine. However, there is a growing drive to distribute electronics or
control systems closer to the actuators and sensors that they control. These locations
where voltage suppression capabilities are needed, are also relatively hot locations
near the equipment being protected, for example, locations with ambient temperatures
in a range that exceeds 125°C ambient up to approximately 300°C or more.
Moreover, voltage spikes on the system remotely from the centralized computing or
control system must travel relatively long distances before being sensed and mitigated
at the TVS components at the centralized computing or control system.
BRIEF DESCRIPTION
In one embodiment, a transient voltage suppressor (TVS)
assembly includes a connecting component configured to electrically couple a first
electrical component to a second electrical component located remotely from the first
electrical component through one or more electrical conduits and a transient voltage
suppressor device positioned within the connecting component and electrically
coupled to the one or more electrical conduits wherein the TVS device includes a
wide band-gap semiconductor material.
In another embodiment, a method of forming a wide band-gap
semiconductor transient voltage suppressor (TVS) assembly wherein the method
includes assembling a connecting component that is configured to electrically couple
a first electrical component to a second electrical component located remotely from
the first electrical component through one or more electrical conduits, positioning a
TVS device within the connecting component wherein the TVS device is formed of a
wide band-gap semiconductor material, and electrically coupling the TVS device to
the one or more electrical conduits.
In yet another embodiment, an aircraft electrical system
includes a first electrical component positioned on an aircraft in a location where an
ambient temperature is capable of exceeding approximately 125" Celsius, a second
electrical component positioned on the aircraft remotely from the first electrical
component, and a connecting member extending between the first electrical
component and the second electrical component wherein the connecting member
includes a transient voltage suppressor (TVS) assembly positioned within the
connecting member and electrically coupled to at least one of the first electrical
component and the second electrical component through the connecting member, the
TVS assembly including a TVS device formed of a wide band-gap semiconductor
material.
BRIEF DESCRIPTION OF THE DRAWINGS
These and other features, aspects, and advantages of the
present technique will become better understood when the following detailed
description is read with reference to the accompanying drawings in which like
characters represent like parts throughout the drawings, wherein:
FIG. 1 is a side elevation view of a transient voltage
suppression (TVS) assembly in accordance with an exemplary embodiment of the
present system;
FIG. 2 is a perspective view of a transient voltage suppressor
(TVS) assembly in accordance with an exemplary embodiment of the present
invention;
FIG. 3 is a perspective view of a transient voltage suppressor
(TVS) assembly in accordance with another exemplary embodiment of the present
invention;
FIG. 4 is a perspective view of a transient voltage suppressor
(TVS) assembly in accordance with another exemplary embodiment of the present
invention;
FIG. 5 is a perspective view of a transient voltage suppressor
(TVS) assembly in accordance with another exemplary embodiment of the present
invention; and
FIG. 6 is a schematic block diagram of a transient voltage
suppression (TVS) system in accordance with an exemplary embodiment of i%e
present invention.
DETAILED DESCRIPTION
The following detailed description illustrates embodiments of
the system by way of example and not by way of limitation. It is contemplated that
the systems and methods have general application to electronic component
manufacturing and packaging in power electronics, signal electronics, and
electromagnetic interference (EMI) protection in industrial, commercial, and
residential applications.
As used herein, an element or step recited in the singular and
preceded with the word "a" or "an" should be understood as not excluding plural
elements or steps, unless such exclusion is explicitly recited. Furthermore, references
to "one embodiment" of the present invention are not intended to be interpreted as
excluding the existence of additional embodiments that also incorporate the recited
features.
Embodiments of the present disclosure demonstrate an
architecture for a transient voltage protection system based on a plurality
semiconductor based TVS devices that operate with low leakage current, can
withstand multiple lightning strikes while operating at or beyond 300°C, and are
distributed throughout the electrical and communication systems being protected.
Distributing the TVS devices to locations closest to possible transient voltage source
points facilitates reducing the severity of the induced electrical spikes and the time the
electrical spikes exist on the lines. Dissipating the energy of a spike away from the
electrical components coupled to the electrical system facilitates reducing the impact
of a lightning strike or other source of transient voltage on the lines. Moreover,
providing multiple paths to ground further enhances the capability of the transient
voltage protection system to drain chargelcurrent from the system.
In one embodiment, the device is fabricated from silicon
carbide (Sic). In other embodiments, the devices are fabricated from other wide band
gap materials such as, but not limited to, gallium nitride (GaN), diamond, aluminum
nitride (AlN), boron nitride (BN), and combinations thereof. The wide band gap
semiconductor TVS device is reliably operable up to approximately 500°C, however,
other components, such as, the TVS packaging may be more limiting in the example
embodiments. The TVS is a clamping device, suppressing approximately all overvoltages
above its breakdown voltage. The TVS device typically comprises three Sic
layers (N-P-N). In other embodiments, the three layers comprise P-N-P layers. In an
N-P-N type device, when the device is subjected to a potential across the two N
layers, a depletion layer is formed (mostly) in the P layer because its doping is much
lower compared to the two N layers. For example, one to five orders of magnitude
lower, or one-tenth to one ten-thousandth of the dopant concentration of the N layers.
For a further example, if the doping concentration in the N layers is approximately
10" /cm3, the doping concentration in the P layers would be approximately 10" /cm3.
As the voltage across the device is increased, the depletion region extends all across
the P layer and touches the N layer on the other side. This leads to a condition known
as "punch-through" and a large amount of current begins flowing in the device. The
device is able to maintain this condition with minimal change in the voltage across it.
A similar explanation describes the operation when the polarity of the layers is
changed to P-N-P. In other embodiments, the TVS device operates using avalanche
breakdown physics.
The TVS devices disclosed herein improve the size,
temperature range, capacitance, and electrical leakage current parameters over current
TVS devices. Because of such improvements, the TVS devices may be located at
other places in the electrical system than where the electronics that they protecting are
located. The TVS devices may be located in the electrical cable, wire harness or
connector connecting the electronic boards together, which can save space in the
electronics boards and also allow for more distributed protection along the harness
and cabling. Additionally, the higher temperature capability of the Sic TVS enables
electronic systems with integrated lightning protection to be located in environments
that exceed 125°C ambient up to approximately 300°C or more. The ability to place
the TVS devices in the portion of the harnesses or connectors closer to sensors and
actuators may offer added protection benefits and increased reliability.
Additionally, integrating lightning protection in wiring
harnesses enables more optimized harness designs because currently without any built
in protection, the harness is expected to see the bulk of the energy in a lightning
strike, and therefore the harnesses must be designed, and shielded appropriately.
Integrating TVS devices in the harness especially in a distributed manner may reduce
the overall shielding and isolation required in the harness permitting lower system
weight. The transient voltage control and suppression capability of a distributed TVS
system is improved over a TVS system at a centralized computing or control system
due at least in part to the multiple paths to ground provided by the distributed system.
Additionally, the distributed TVS system described herein
provides improved thermal management by allowing for the dissipation of the energy
of electrical voltage spikes outside the computing or control system. The removal of
TVS devices from the FADEC facilitates shrinking the size of the central computing
or control system through a lesser need for thermal management around these devices.
A distributed TVS architecture enables distributed computing or control particularly
in harsh environments, facilitates energy dissipation away from sensitive electronics,
and provides inherent redundancy by dissipating the energy through multiple paths.
FIG. 1 is a side elevation view of a transient voltage
suppression (TVS) assembly 100 in accordance with an exemplary embodiment of the
present system. In the exemplary embodiment, TVS assembly 100 includes a TVS
device 102 and a PN junction 104 electrically coupled in series through a
semiconductor substrate 106 comprising a first polarity, for example, an N+ polarity
based on the doping implemented in the fabrication of substrate 106.
TVS device 102 includes a mesa structure that is formed on
substrate 106 of for example, silicon carbide having an N+ type conductivity. In the
exemplary embodiment, an N+ type conductivity layer 108 is epitaxially grown on
substrate 106. An epitaxially grown P- layer 110 is coupled in electrical contact with
layer 108. An epitaxially grown N+ layer 112 is coupled in electrical contact with Player
110. In the exemplary embodiment, P- layer 110 is relatively lightly doped
relative to the N+ layers 108 and 1 12. A uniform doping concentration of substrate
106 and layers 108, 110, and 112 improves a uniformity of the electric field
distribution in the depletion region of layer 110, thereby improving the breakdown
voltage characteristic. Moreover, the mesa structure has a beveled sidewall angled
approximately five degrees to approximately eighty degrees with respect to an
interface between adjacent contacting layers to reduce the maximum electric field
profile at a surface of the die. A first electrical contact 114 is coupled in electrical
contact with layer 112 and extends to a contact surface 115 of TVS assembly 100.
PN junction 104 is formed similarly as TVS device 102. An
N+ type conductivity layer 116 is epitaxially grown on substrate 106. An epitaxially
grown P- layer 1 18 is coupled in electrical contact with layer 116. A second electrical
contact 120 is coupled in electrical contact with layer 118 and extends to contact
surface 115. Electrical contacts 114 and 120 may be formed by sputtering, vapor
deposition, evaporation, or other method for adhering a metal contact surface to
semiconductor surfaces of layers 112 and 118. In various embodiments, electrical
contacts 114 and 120 include sublayers of different materials. For example, contacts
114 and 120 may include a first sublayer 122 comprising, for example, nickel (Ni),
which possesses good adherence characteristics with respect to the semiconductor
material of layer 1 12 and 1 18. A second sublayer 124 comprising for example,
tungsten (W) is deposited onto Ni sublayer 122 and a third sublayer comprising, for
example, gold (Au) is deposited onto W sublayer 124. W and Au are used to provide
lower resistivity for electrical contacts 114 and 120. Although, described herein as
comprising sublayers of Ni, W, and Au, it should be recognized that electrical
contacts 114 and 120 may comprise more or less that three sublayers comprising the
same or different materials than Ni, W, and Au.
In the exemplary embodiment, TVS assembly 100 is formed
in a "flip chip" configuration. Accordingly, electrical contacts 114 and 120 are
oriented on the same side of TVS assembly 100. Moreover, TVS device 102 operates
-8-
using "punch-through," or also known as, "reach-through" physics such that as the
voltage across TVS device 102 is increased, a depletion region extends all across Player
1 1 O and touches N+ layers 108 and 1 12. This leads to a condition known as
"punch-through" and large amounts of current are able to flow through TVS device
102. TVS device 102 is able to maintain this condition with minimal change in the
voltage across it.
In various embodiments, TVS device 102 is sized and formed
to ensure a maximum electric field internal to the semiconductor material of TVS
device 102 is maintained less than two megavolts per centimeter. Additionally, TVS
device 102 is configured to maintain an increase in blocking voltage of less than 5%
for current in a range of less than approximately 1.0 nanoamp to approximately 1.0
milliamp. As used herein, blocking voltage refers to the highest voltage at which
TVS device 102 does not conduct or is still in an "off' state. Moreover, TVS device
102 is configured to maintain an electrical leakage current of less than approximately
1.0 microamp up to approximately the punch-through voltage of TVS device 102 at
room temperature and less than 1.0 microamp up to approximately the punch-through
voltage at operating temperatures that exceeds 125°C ambient up to approximately
300°C or more.
In various embodiments, TVS device 102 is configured to
exhibit punch through characteristics between approximately 5.0 volts to
approximately 75.0 volts. In various other embodiments, TVS device 102 is
configured to exhibit punch through characteristics between approximately 75.0 volts
to approximately 200.0 volts. In still other embodiments, TVS device 102 is
configured to exhibit punch through characteristics greater than approximately 200
volts.
Although the semiconductor material used to form TVS
device 102 and PN junction 104 is described herein as being silicon carbide, it should
be understood that the semiconductor material may include other wide band-gap
semiconductors capable of performing the functions described herein and in the
environments described herein. Such wide-band gap semiconductors include a lower
circuit capacitance that enables more TVS assemblies on an electrical signal line
without signal degradation.
FIG. 2 is a perspective view of a transient voltage suppressor
(TVS) assembly 200 in accordance with an exemplary embodiment of the present
invention. In the exemplary embodiment, a connecting component 202 is configured
to electrically couple a first electrical component 204 to a second electrical
component 206 located remotely fiom first electrical component 204 through one or
more electrical conduits 208. A transient voltage suppressor (TVS) device 210
positioned within the connecting component and electrically coupled to one or more
electrical conduits 208. In one embodiment, a first terminal 212 of TVS device 210 is
electrically coupled to one or more electrical conduits 208 and a second terminal 214
is electrically coupled to a ground connection 216. In various embodiments, second
terminal 214 is electrically coupled to a return conduit (not shown in FIG. 2). Also in
the exemplary embodiment TVS device 210 is formed using layers of doped wide
band-gap semiconductor material. TVS device 210 may include a single TVS device
or may include a plurality of independent TVS devices. The plurality of TVS devices
may be connected to the one or more electrical conduits 208 separately, connected in
electrical parallel, electrical series, or combinations thereof.
TVS device 210 is capable of operating reliably at
temperatures in the range of from 0°C and lower to approximately 300°C. In one
embodiment, TVS device 210 is fabricated fiom silicon carbide (Sic). In other
embodiments, TVS device 210 are fabricated fiom other wide band gap materials
such as, but not limited to, gallium nitride (GaN), diamond, aluminum nitride (AIN),
boron nitride (BN), and combinations thereof. Wide band gap semiconductor TVS
device 210 itself is reliably operable up to approximately 500°C, however, other
components, such as, the TVS packaging may be more limiting in the example
embodiments.
FIG. 3 is a perspective view of a transient voltage suppressor
(TVS) assembly 300 in accordance with another exemplary embodiment of the
present invention. In the exemplary embodiment, a connecting component 302, such
as, a cable is configured to electrically couple to first electrical component 204 using
a first connector 304 and to second electrical component 206 using a second
connector 306. Connectors 304 and 306 also maintain mechanical coupling between
cable 302 and respective electrical components 204 and 206. Typically, second
electrical component 206 is located remotely from first electrical component 204. A
transient voltage suppressor (TVS) device 210 is positioned within cable 302 and is
electrically coupled to one or more electrical conduits 208. In the exemplary
embodiment, electrical conduits 208 are enclosed in a sheath that extends at least
partially from first connector 304 to second connector 306. In one embodiment, a
first terminal 212 of TVS device 210 is electrically coupled to one or more electrical
conduits 208 and a second terminal 214 is electrically coupled to a ground connection
216. In various embodiments, second terminal 214 is electrically coupled to a return
conduit (not shown in FIG. 3). Also in the exemplary embodiment TVS device 210 is
formed using layers of doped wide band-gap semiconductor material. TVS device
210 may include a single TVS device or may include a plurality of independent TVS
devices. The plurality of TVS devices may be connected to the one or more electrical
conduits 208 separately, connected in electrical parallel, electrical series, or
combinations thereof.
TVS device 210 is capable of operating reliably at
temperatures in the range of from 0°C and lower to approximately 300°C. In one
embodiment, TVS device 210 is fabricated from silicon carbide (Sic). In other
embodiments, TVS device 210 are fabricated from other wide band gap materials
such as, but not limited to, gallium nitride (GaN), diamond, aluminum nitride (AlN),
boron nitride (BN), and combinations thereof. Wide band gap semiconductor TVS
device 210 itself is reliably operable up to approximately 500°C, however, other
components, such as, the TVS packaging may be more limiting in the example
embodiments.
FIG. 4 is a perspective view of a transient voltage suppressor
(TVS) assembly 400 in accordance with another exemplary embodiment of the
present invention. In the exemplary embodiment, a connecting component 402, such
as, a wiring harness comprising at least one of one or more wires 404 and one or more
-1 1-
of cables 406 is configured to electrically couple to first electrical component 204
using a first connector 408 and to second electrical component 206 using one or more
second connectors 410, 412, and 414. Connectors 408, 410, 412, and 414 also
maintain mechanical coupling between wiring harness 402 and respective electrical
components 204 and 206. The separate wires 404 andlor cables 406 may be bound
together to form wiring harness 402 using, for example, but not limited to, clamps,
cable ties, cable lacing, sleeves, electrical tape, conduit, a weave of extruded string, or
a combination thereof.
Typically, second electrical component 206 is located
remotely from first electrical component 204. A transient voltage suppressor (TVS)
device 210 is positioned within wiring harness 402 and is electrically coupled to one
or more electrical conduits 416. In the exemplary embodiment, electrical conduits
416 are enclosed in a sheath 418 that extends at least partially from first connector
408 to one or more second connectors 410 and 414. Electrical conduits 416 may also
comprise individual wires 404. One or more TVS devices 420, 422, and 424 may be
electrically coupled to electrical conduits 416 whether electrical conduits 416 are
individual wires 404 or whether they are enclosed in sheath 418. In one embodiment,
a first terminal of TVS devices 420, 422, and 424 are electrically coupled to one or
more electrical conduits 416 and a second terminal is electrically coupled to a ground
connection, similar to the embodiments shown above. In various embodiments, a
second terminal may be electrically coupled to a return conduit as described above.
In the exemplary embodiment one or more TVS devices 420,422, and 424 are formed
using layers of doped wide band-gap semiconductor material. TVS devices 420,422,
and 424 may include a single TVS device or may include a plurality of independent
TVS devices. The plurality of TVS devices may be connected to the one or more
electrical conduits 416 separately, connected in electrical parallel, electrical series, or
combinations thereof.
TVS devices 420, 422, and 424 are capable of operating
reliably at temperatures in the range of from 0°C and lower to approximately 300°C.
In one embodiment, TVS devices 420, 422, and 424 are fabricated from silicon
carbide (Sic). In other embodiments, TVS devices 420, 422, and 424 are fabricated
-12-
from other wide band gap materials such as, but not limited to, gallium nitride (GaN),
diamond, aluminum nitride (AlN), boron nitride (BN), and combinations thereof.
Wide band gap semiconductor TVS devices 420, 422, and 424 are reliably operable
up to approximately 500°C, however, other components, such as, the TVS packaging
may be more limiting in the example embodiments.
FIG. 5 is a perspective view of a transient voltage suppressor
(TVS) assembly 500 in accordance with another exemplary embodiment of the
present invention. In the exemplary embodiment, a connecting component 502, such
as, an electrical connector, is configured to electrically couple to first electrical
component 204. A first connector half of connector 502 includes one or more
connector pins 504 inserted through apertures in a connector insert 506 pressed into
an interior of a connector free shell 508. A coupling nut 510 surrounds a portion of
free shell 508 and is threaded to engage complementary threads on a second
connector half 512 affixed to first electrical component 204. Uninsulated portions
5 14 of individual wires 5 16 are electrically coupled to connector pins 504 using for
example, but not limited to, soldering and crimping. A cable 5 18 carrying wires 5 16
is supported by a backshell 520 and cable clamp assembly 522.
A transient voltage suppressor (TVS) device 210 is positioned
within connector 502 and is electrically coupled to one or more of wires 516. In one
embodiment, a first terminal of TVS device 210 is electrically coupled to one or more
of wires 516 and a second terminal is electrically coupled to a ground connection,
similar to the embodiments shown above. In various embodiments, the second
terminal may be electrically coupled to a return conduit as described above. In the
exemplary embodiment TVS device 210 is formed using layers of doped wide bandgap
semiconductor material. TVS device 210 may include a single TVS device or
may include a plurality of independent TVS devices. The plurality of TVS devices
may be connected to the one or more of wires 516 separately, connected in electrical
parallel, electrical series, or combinations thereof.
TVS device 210 is capable of operating reliably at
temperatures in the range of from 0°C and lower to approximately 300°C. In one
embodiment, TVS device 210 is fabricated from silicon carbide (Sic). In other
embodiments, TVS device 2 10 is fabricated firom other wide band gap materials such
as, but not limited to, gallium nitride (GaN), diamond, aluminum nitride (AIN), boron
nitride (BN), and combinations thereof. Wide band gap semiconductor TVS device
2 10 is reliably operable up to approximately 500°C, however, other components, such
as, the TVS packaging may be more limiting in the example embodiments.
FIG. 6 is a schematic block diagram of a transient voltage
suppression (TVS) system 600 in accordance with an exemplary embodiment of the
present invention. In the exemplary embodiment, a central computing or control
system 602, for example, but not limited to, a full authority digital engine (or
electronics) control (FADEC) includes a plurality of connections to components
external to central computing or control system 600. In one embodiment, a first
connection 604 is embodied in a cable connector comprises a TVS assembly 606
within a backshell 608 of first connection 604. In the exemplary embodiment, TVS
assembly 606 includes a single TVS device. In various other embodiments, TVS
assembly 606 includes a plurality of TVS devices electrically coupled in at least one
of series, parallel, and combinations thereof.
TVS system 600 may also include a connector socket 610 that
may mount to an enclosure housing central computing or control system 602 or to an
electronic component board of central computing or control system 602. Connector
socket 610 is configured to receive a complementary end of a cable 612. In the
exemplary embodiment, connector socket 610 includes a TVS assembly 606. In
various embodiments, cable 612 may also comprise TVS assembly 606, for example
within a backshell of a cable-side connector.
TVS system 600 may be used in systems that include
relatively high temperature areas 614, for example, where environmental temperatures
can exceed, for example, 125°C ambient up to approximately 300°C or more. In
areas 6 14, TVS assemblies 606 may be included with components that are operating
in such high temperature environments. In the exemplary embodiment, a TVS
assembly may be included within a high temperature component 616, may be spaced
along a length of a cable or cable harness 61 8, andor may be included at a connection
end 620 of a component 622. As described herein multiple TVS assemblies 606 can
be sized and positioned for multiple redundancy, configured for a "network" response
to accommodate failures of some TVS assemblies while maintaining protection via
other TVS assemblies in the network.
During operation, having multiple paths to ground through
the plurality of TVS assemblies 606 located throughout TVS system 600 for the
dissipation of energy facilitates protecting central computing or control system 602
and other equipment from lightning strikes and other transient voltage events.
In various embodiments, at least some of the TVS devices are
located in areas with favorable thermal dissipation such as low temperature gas flow,
areas with high velocity gas flow, or in contact with structures having a high thermal
mass. Moreover, the TVS devices are located electrically as part of the system such
that they serve to increase the redundancy of the electrical protection provided to a
plurality of the electrical components by creating multiple paths that may or may not
be co-located for the energy to flow.
The above-described embodiments of a method and system of
transient voltage suppression provides a cost-effective and reliable means for reducing
and/or eliminating voltage spikes induced into electrical systems such as from EM1
andlor lightning strikes. More specifically, the methods and systems described herein
facilitate positioning the TVS device close to areas prone to lightning strikes or an
origination of electromagnetic surges or spikes and at multiple points along a signal or
power line. The small size of the wide band gap semiconductor TVS device and flip
chip packaging permit such positioning within cables, wiring harnesses, andlor
connectors. Moreover, the wide band gap semiconductor material permits placement
of the TVS device in high temperature environments where transmit voltage
protection is needed. In addition, the above-described methods and systems facilitate
operating electronic components in high density housings without additional cooling
support. As a result, the methods and systems described herein facilitate operating
vehicles, such as aircraft in a cost-effective and reliable manner.
I This written description uses examples to disclose the
invention, including the best mode, and also to enable any person skilled in the art to
practice the invention, including making and using any devices or systems and
performing any incorporated methods. The patentable scope of the invention is
defined by the claims, and may include other examples that occur to those skilled in
the art. Such other examples are intended to be within the scope of the claims if they
have structural elements that do not differ from the literal language of the claims, or if
they include equivalent structural elements with insubstantial differences from the
literal languages of the claims.

We Claim:
1. An electrical system comprising:
a plurality of distributed electrical components (602, 616, 622), at least
some of the plurality of distributed electrical components positioned remotely from
other ones of the plurality of distributed electrical components, at least some of the
plurality of distributed electrical components electrically coupled through respective
electrical conduits (208) to other ones of the plurality of distributed electrical
components; and
a networked distributed protection system (600) comprising a plurality
of transient voltage suppression (TVS) devices (606) electrically coupled to at least
one of said electrical conduits and said distributed electrical components, said TVS
devices positioned proximate said at least one of said electrical conduits and said
distributed electrical components providing a plurality of electrical dissipation paths
for each distributed electrical component through the electrical conduits and TVS
devices.
2. A system in accordance with Claim 1, wherein said electrical
system comprises at least one of an airframe electrical system, an aircraft engine
electrical system, an unmanned vehicle electrical system, a wind turbine electrical
system, a power generation electrical system, and a power distribution and
transmission electrical system.
3. A system in accordance with Claim 1, wherein said distributed
electrical components comprise at least one of a connector (610), an engine control
system, a full authority digital engine control (FADEC), a remote interrogation unit
(RIU), a smart sensor, an actuator, and an end electrical node.
4. A system in accordance with Claim 1, wherein at least one of
said plurality of TVS devices is positioned at least one of within and proximate to at
least one of a flow of low temperature gas, a flow of high velocity gas, and in contact
with an object having a relatively high thermal mass.
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5. A system in accordance with Claim 1, wherein at least some of
said plurality of TVS devices are electrically coupled within said aircraft electrical
system such that a redundancy of the electrical protection is provided to the pluraUty
of distributed electrical components.
6. A system in accordance with Claim 5, wherein the plurality of
electrical dissipation paths are physically dispersed.
7. A system in accordance with Claim 1, wherein said electrical
conduit comprises a cable (302) comprising:
a first electrical connector (304) configured to mate with a first
electrical component (204) of the plurality of electrical components;
a second electrical connector (306) configured to mate with a
second electrical component (206) of the plurality of electrical components;
one or more electrical wires (208) of said cable extending
between said first electrical connector and said second electrical cormector,
said one or more electrical wires at least partially surrounded by a sheath (308)
along a length of said one or more electrical wires, said transient voltage
suppressor device (210) positioned within said sheath.
8. A system in accordance with Claim 1, wherein said electrical
conduit comprises a cable comprising a first cable end, a second cable end, and one or
more electrical wires extending therebetween, said one or more electrical conduits at
least partially surrounded by a sheath along a length of said one or more electrical
wires, said TVS device positioned within said sheath.
9. A system in accordance with Claim 1, wherein said electrical
conduit comprises a wiring harness (402) comprising at least one of a plurality of
wires (404) and a plurality of cables (406), each of said plurality of wires and plurality
of cables comprising a first termination end and a second termination end, said
plurality of wires and plurahty of cables bound together along their respective lengths,
-18-
said TVS device (424) positioned along a length of one or more of said plurality of
wires and plurality of cables.
10. A system in accordance with Claim 1, wherein said electrical
conduit comprises an electrical connector comprising:
a grommet (506) configured to receive at least one of a plug contact
(504) and a socket contact (504);
a shell (520) at least partially surrounding said grommet; and
a TVS device (210) positioned within the shell and electrically coupled
to at least one of the plug contact and the socket contact.