Abstract: The present disclosure relates to a method of depositing high quality gate dielectric layer and passivation layers on high electron mobility transistor (HEMT) device and the HEMT device(s) thereof.
Description:Please see attached , Claims:Please see attached
| # | Name | Date |
|---|---|---|
| 1 | 202441072637-STATEMENT OF UNDERTAKING (FORM 3) [25-09-2024(online)].pdf | 2024-09-25 |
| 2 | 202441072637-REQUEST FOR EXAMINATION (FORM-18) [25-09-2024(online)].pdf | 2024-09-25 |
| 3 | 202441072637-POWER OF AUTHORITY [25-09-2024(online)].pdf | 2024-09-25 |
| 4 | 202441072637-FORM FOR SMALL ENTITY(FORM-28) [25-09-2024(online)].pdf | 2024-09-25 |
| 5 | 202441072637-FORM 18 [25-09-2024(online)].pdf | 2024-09-25 |
| 6 | 202441072637-FORM 1 [25-09-2024(online)].pdf | 2024-09-25 |
| 7 | 202441072637-EVIDENCE FOR REGISTRATION UNDER SSI(FORM-28) [25-09-2024(online)].pdf | 2024-09-25 |
| 8 | 202441072637-EVIDENCE FOR REGISTRATION UNDER SSI [25-09-2024(online)].pdf | 2024-09-25 |
| 9 | 202441072637-EDUCATIONAL INSTITUTION(S) [25-09-2024(online)].pdf | 2024-09-25 |
| 10 | 202441072637-DRAWINGS [25-09-2024(online)].pdf | 2024-09-25 |
| 11 | 202441072637-DECLARATION OF INVENTORSHIP (FORM 5) [25-09-2024(online)].pdf | 2024-09-25 |
| 12 | 202441072637-COMPLETE SPECIFICATION [25-09-2024(online)].pdf | 2024-09-25 |
| 13 | 202441072637-FORM-9 [08-10-2024(online)].pdf | 2024-10-08 |
| 14 | 202441072637-FORM-8 [08-10-2024(online)].pdf | 2024-10-08 |
| 15 | 202441072637-FORM 18A [08-10-2024(online)].pdf | 2024-10-08 |
| 16 | 202441072637-EVIDENCE OF ELIGIBILTY RULE 24C1f [08-10-2024(online)].pdf | 2024-10-08 |
| 17 | 202441072637-FORM 3 [03-01-2025(online)].pdf | 2025-01-03 |
| 18 | 202441072637-Proof of Right [25-02-2025(online)].pdf | 2025-02-25 |
| 19 | 202441072637-FER.pdf | 2025-10-24 |
| 1 | 202441072637_SearchStrategyNew_E_dielectricE_28-03-2025.pdf |