The present disclosure relates to the field of quantum memory. More particularly, it relates to a method for information storage using negatively charged sub-atomic particles.
BACKGROUND
[0002] Background description includes information that may be useful in
understanding the present disclosure. It is not an admission that any of the
information provided herein is prior art or relevant to the presently claimed
disclosure, or that any publication specifically or implicitly referenced is prior art.
[0003] Storing huge volume of information in a tiny physical space can solve
the problem of 'Big data' over the internet. Therefore there is need in the art to develop a method for storage of information in sub-atomic particles. [0004] Existing literature on Spintronics discusses the role of spin of sub¬atomic particles in solid-state physics and devices that can leverage these properties. A method for storing and retrieving quantum states in a spin ensemble has been discussed in literature. Another prior art describes quantum information storing high-sensitivity ESR. A memory device based on Coulomb blockade principle of quantized memory states has been disclosed. Use of spin of sub¬atomic particle for increasing density and operation speed of a memory device appears in another literature. However none of the disclosures describe the functional steps for encoding/decoding of information stored in negatively charged sub-atomic particles.
[0005] The proposed method describes a step-by-step process of capturing a negatively charged sub-atomic particle and technique for generation, storage and retrieval of digital information retained in a tiny space.
OBJECTS OF THE PRESENT DISCLOSURE
[0006] Some of the objects of the present disclosure, which at least one embodiment herein satisfies are as listed herein below.

[0007] It is an object of the present disclosure to provide a method for
information storage using negatively charged sub-atomic particle.
[0008] It is an object of the present disclosure to provide a method for
information storage comprising a step that facilitates entrapping of a negatively
charged sub-atomic particle using a single electron transistor.
[0009] It is an object of the present disclosure to provide a method for
information storage comprising a step that enables a user to determine spin state
of the entrapped negatively charged sub-atomic particle using by magnetic
deflection of the negatively charged sub-atomic particle using a Stern-Gerlach
apparatus.
[0010] It is an object of the present disclosure to provide a method for
information storage comprising a step that enables controlling the spin state of the
negatively charged sub-atomic particle by applying a beam of light and a second
magnetic field to the entrapped negatively charged sub-atomic particle.
[0011] It is an object of the present disclosure to provide a method for
information storage comprising a step that enables encoding an event pertaining to
change of spin state into digital information comprising of binary digits.
SUMMARY
[0012] The present disclosure relates to the field of quantum memory. More
particularly, it relates to a method for information storage using negatively
charged sub-atomic particles.
[0013] An aspect of the present disclosure pertains to a method (100) for
digital information storage using spin analysis of negatively charged sub-atomic
particle.
[0014] In an aspect the method (100) for information storage may comprise a
step (102) facilitating entrapment of a negatively charged sub-atomic particle
using a single electron transistor.
[0015] In an aspect, the single electron transistor may be implemented using a
filed effect transistor configured to have a first, second and a third electrode.

[0016] In an aspect, the negatively charged sub-atomic particle may be
captured from current flowing from the first to the second electrode of the field
effect transistor, the current being controlled by a predetermined voltage signal
applied to the third electrode of the field effect transistor.
[0017] In an aspect the method (100) may comprise a step (104) configured to
enable determination of spin state of the entrapped negatively charged sub-atomic
particle using by magnetic deflection of the negatively charged sub-atomic
particle in a Stern-Gerlach apparatus.
[0018] In an aspect magnitude and sign of deflection of the negatively
charged sub-atomic particle may pertain to a first or a second spin state.
[0019] In an aspect the method (100) may comprise a step (106) configured to
control the spin state of the entrapped negatively charged sub-atomic particle by
applying a beam of light and a second magnetic field to the entrapped negatively
charged sub-atomic particle.
[0020] In an aspect the step (106) may result in preservation or change of spin
state of the entrapped negatively charged sub-atomic particle upon interaction of
the entrapped negatively charged sub-atomic particle with light particles.
[0021] In an aspect the method (100) may comprise a step (108) configured to
encode an event pertaining to change of spin state of the entrapped negatively
charged sub-atomic particle into digital information comprising of binary digits.
BRIEF DESCRIPTION OF THE ACCOMPANYING DRAWINGS
[0022] The accompanying drawings are included to provide a further understanding of the present disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments of the present disclosure and, together with the description, serve to explain the principles of the present disclosure.
[0023] The diagrams described herein are for illustration only, which thus are not limitations of the present disclosure, and wherein:

[0024] FIG. 1 illustrates exemplary steps of the proposed information storage
method (100) using negatively charged sub-atomic particle in accordance with an
embodiment of the present disclosure.
[0025] FIG. 2 illustrates exemplary representation (200) of a single electron
transistor pertaining to the proposed information storage method (100) using
negatively charged sub-atomic particle in accordance with an embodiment of the
present disclosure.
[0026] FIG. 3 illustrates exemplary flow diagram (300) of the proposed
information storage method (100) using negatively charged sub-atomic particle in
accordance with an embodiment of the present disclosure.
DETAILED DESCRIPTION
[0027] In the following description, numerous specific details are set forth in order to provide a thorough understanding of embodiments of the present invention. It will be apparent to one skilled in the art that embodiments of the present invention may be practiced without some of these specific details. [0028] If the specification states a component or feature "may", "can", "could", or "might" be included or have a characteristic, that particular component or feature is not required to be included or have the characteristic. [0029] As used in the description herein and throughout the claims that follow, the meaning of "a," "an," and "the" includes plural reference unless the context clearly dictates otherwise. Also, as used in the description herein, the meaning of "in" includes "in" and "on" unless the context clearly dictates otherwise.
[0030] While embodiments of the present invention have been illustrated and described in the accompanying drawings, the embodiments are offered only in as much detail as to clearly communicate the disclosure and are not intended to limit the numerous equivalents, changes, variations, substitutions and modifications falling within the spirit and scope of the present disclosure as defined by the appended claims.

[0031] Groupings of alternative elements or embodiments of the invention disclosed herein are not to be construed as limitations. Each group member can be referred to and claimed individually or in any combination with other members of the group or other elements found herein. One or more members of a group can be included in, or deleted from, a group for reasons of convenience and/or patentability. When any such inclusion or deletion occurs, the specification is herein deemed to contain the group as modified thus fulfilling the written description of all groups used in the appended claims.
[0032] Each of the appended claims defines a separate invention, which for infringement purposes is recognized as including equivalents to the various elements or limitations specified in the claims. Depending on the context, all references below to the "invention" may in some cases refer to certain specific embodiments only. In other cases it will be recognized that references to the "invention" will refer to subject matter recited in one or more, but not necessarily all, of the claims.
[0033] Various terms as used herein are shown below. To the extent a term used in a claim is not defined below, it should be given the broadest definition persons in the pertinent art have given that term as reflected in printed publications and issued patents at the time of filing.
[0034] The present disclosure relates to the field of quantum memory. More particularly, it relates to a method for information storage using negatively charged sub-atomic particles.
[0035] FIG. 1 illustrates exemplary steps of the proposed information storage method (100) using negatively charged sub-atomic particle in accordance with an embodiment of the present disclosure.
[0036] In an embodiment, proposed method (100) for information storage using negatively charged sub-atomic particle may include a step (102) that may facilitate entrapment of a negatively charged sub-atomic particle using a single electron transistor. By way of example, the single electron transistor may be implemented using a filed effect transistor configured to have a first, second and a third electrode. The first and the second electrodes may be coupled to a power

supply unit that may be configured to provide electric power of predetermined specifications to the first, second and the third electrode of the single electron transistor.
[0037] In an exemplary embodiment, the first electrode may be enabled to receive a first electrical signal of predetermined magnitude and the second electrode may be enabled to receive a second electrical signal of predetermined magnitude, the first and the second electrical signals being opposite in polarity. The negatively charged sub-atomic particle may pertain to the set of negatively charged sub-atomic particles comprising current flow from the first to the second electrode of the single electron transistor. Rate current flow from the first to the second electrode may be controlled by magnitude and polarity of a third electrical signal applied to the third electrode of the single electron transistor, the first, second and third electrical signals corresponding to either a voltage or a current signal.
[0038] In an embodiment, the single electron transistor may be fabricated to facilitate formation of an isolated conducting channel between the first and the second electrode. A first junction may be generated between the first electrode and the isolated conducting channel and a second junction may be generated between the second electrode and the isolated conducting channel. By way of example, negatively charged sub-atomic particles pertaining to current flow from the first to the second electrode may be configured to tunnel through the first and the second junction depending on the potential applied to the third electrode. The selected negatively charged sub-atomic particle may be trapped in the isolated conducting channel.
[0039] In an embodiment, the method (100) may comprise a step (104) that may be configured to enable determination of spin state of the entrapped negatively charged sub-atomic particle. In an exemplary embodiment, the trapped negatively charged sub-atomic particle may be placed in a Stern-Gerlach apparatus. Inside the Stern-Gerlach apparatus, a first magnetic field may be applied to the trapped negatively charged sub-atomic particle, the first magnetic field pertaining to predetermined strength and duration. The negatively charged

sub-atomic particle may be deflected in response to application of the first magnetic field. The direction and magnitude of deflection of the trapped negatively charged sub-atomic particle under the influence of the first magnetic field may be configured to determine spin state of the negatively charged sub-atomic particle. The negatively charged sub-atomic particle may pertain to spin state pertaining to either positive or negative. The first and the second spin states may correspond to either of a clockwise rotation or a counter clockwise rotation, the rotations being configured about any of a set of orthogonal axes. The exemplary set of axes may pertain to the x, y and the z axis. Strength and duration of the applied magnetic field may be predetermined. By way of example a positive half spin may pertain to deflection in a first direction and a negative half spin may pertain to deflection in a second direction, the first and the second directions being opposite in nature. Direction of deflection may include any of a vertical or horizontal movement of the negatively charged sub-atomic particle. [0040] In an embodiment, the method (100) may comprise a step (106) that may be configured to control the spin state of the entrapped negatively charged sub-atomic particle by applying a beam of light and a second magnetic field to the entrapped negatively charged sub-atomic particle. By way of example, the beam of light may pertain to predetermined wavelength and may be applied to the entrapped negatively charged sub-atomic particle for predetermined duration. The second magnetic field may pertain to predetermined strength. The application of the beam of light and second magnetic field may be configured to perform any of preservation of original spin state and change of spin state of the entrapped negatively charged sub-atomic particle upon interaction of the entrapped negatively charged sub-atomic particle with the photon particles of the beam of light.
[0041] In an embodiment, the method (100) may include a step (108) that may be configured to encode in a predetermined fashion, occurrence of an event of change of spin state of the entrapped negatively charged sub-atomic particle into digital information. By way of example, the digital information encoding the change of spin events may pertain to any of binary digits 0 and 1, the first change

of spin being encoded as 0 and the second change of spin being encoded as 1 or vice versa, based on the original spin state determined in step (104). [0042] FIG. 2 illustrates exemplary representation (200) of a single electron transistor pertaining to the proposed information storage method (100) using negatively charged sub-atomic particle in accordance with an embodiment of the present disclosure.
[0043] In an illustrative embodiment, the single electron transistor may be implemented using field effect transistor. The first and the second electrodes of the field effect transistor may be coupled to the power supply unit that may be configured to provide electric power of predetermined specifications. By way of example, the single electron transistor may pertain to any of a metallic and a semiconducting tunneling device for a negatively charged sub-atomic particle. The first electrode may be enabled to receive the first electrical signal of predetermined magnitude and the second electrode may be enabled to receive the second electrical signal of predetermined magnitude, the first and the second electrical signals being opposite in polarity. By way of example, the first electrode may be coupled to a +5 volt supply and the second electrode may be coupled to a 0 volt supply. In another embodiment, the first electrode may be coupled to a +2.5 volt supply and the second electrode may be coupled to a -2.5 volt supply. Rate of current flow from the first to the second electrode may be controlled by magnitude and polarity of the third electrical signal applied to the third electrode. A third junction formed between the third electrode and the isolated conducting channel between the fist and the second electrodes may be configured to exhibit capacitive electrical properties. By way of example, negative voltage signal may be coupled to the third electrode, the negative voltage signal being enabled to electrostatically influence the isolated conducting channel between the first and the second junctions. Negative charge depleted region formed due to application of the third electrical signal may be enabled to trap the negatively charged sub-atomic particle in the isolated conducting channel or quantum dot.

[0044] FIG. 3 illustrates exemplary flow diagram (300) of the proposed information storage method (100) using negatively charged sub-atomic particle in accordance with an embodiment of the present disclosure.
[0045] In an illustrative embodiment, the negatively charged sub-atomic particle may be trapped by a single electron transistor. The single electron transistor may be placed in a Stern-Gerlach apparatus. Inside the Stern-Gerlach apparatus, the first magnetic field may be applied to the trapped negatively charged sub-atomic particle. The direction and magnitude of deflection of the trapped negatively charged sub-atomic particle under the influence of the first magnetic field may be configured to determine spin state of the negatively charged sub-atomic particle. Then, the trapped negatively charged sub-atomic particle may be subjected to the beam of light of predetermined wavelength in presence of the second magnetic field of predetermined strength. Under the impact of the beam of light, the spin state of the trapped negatively charged sub¬atomic particle may either be preserved or changed, the spin-state being configured to pertain to any of the clockwise and counterclockwise orientations. Occurrence of spin-change event of the trapped negatively charged sub-atomic particle may be encoded as binary stream of information. The binary stream of information may be transmitted to a computing device coupled to the Stern-Gerlach apparatus, the computing device being configured to store the received information.
[0046] As used herein, and unless the context dictates otherwise, the term "coupled to" is intended to include both direct coupling (in which two elements that are coupled to each other contact each other) and indirect coupling (in which at least one additional element is located between the two elements). Therefore, the terms "coupled to" and "coupled with" are used synonymously. Within the context of this document terms "coupled to" and "coupled with" are also used euphemistically to mean "communicatively coupled with" over a network, where two or more devices are able to exchange data with each other over the network, possibly via one or more intermediary device.

[0047] The terms, descriptions and figures used herein are set forth by way of illustration only. Many variations are possible within the spirit and scope of the subject matter, which is intended to be defined by the following claims and their equivalents in which all terms are meant in their broadest reasonable sense unless otherwise indicated.
[0048] While the foregoing describes various embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof. The scope of the invention is determined by the claims that follow. The invention is not limited to the described embodiments, versions or examples, which are included to enable a person having ordinary skill in the art to make and use the invention when combined with information and knowledge available to the person having ordinary skill in the art.
ADVANTAGES OF THE INVENTION
[0049] The present disclosure provides for a method for information storage
using negatively charged sub-atomic particle.
[0050] The present disclosure provides for a method for information storage
comprising a step that facilitates entrapping of a negatively charged sub-atomic
particle using a single electron transistor.
[0051] The present disclosure provides for a method for information storage
comprising a step that enables a user to determine spin state of the entrapped
negatively charged sub-atomic particle using by magnetic deflection of the
negatively charged sub-atomic particle using a Stern-Gerlach apparatus.
[0052] The present disclosure provides for a method for information storage
comprising a step that enables controlling the spin state of the negatively charged
sub-atomic particle by applying a beam of light and a second magnetic field to the
entrapped negatively charged sub-atomic particle.
[0053] The present disclosure provides for a method for information storage
comprising a step that enables encoding an event pertaining to change of spin
state into digital information comprising of binary digits.

We Claim:

1. A method facilitating digital information storage (100) by spin analysis of
negatively charged sub-atomic particles, wherein spin pertains to
rotational motion of the negatively charged sub-atomic particle about an
axis of the negatively charged sub-atomic particle, the method comprising
the steps of:
entrapping a negatively charged sub-atomic particle using a single electron transistor, wherein the negatively charged sub¬atomic particle is captured from flow of current, wherein the current is configured to flow from a first electrode of the single electron transistor to a second electrode of the single electron transistor;
determining using Stern-Gerlach apparatus, spin of the entrapped negatively charged sub-atomic particle, wherein the spin of the negatively charged sub-atomic particle pertains to either a first spin orientation or a second spin orientation;
controlling spin of the entrapped negatively charged sub-atomic particle by applying a beam of light in presence of a second magnetic field, wherein the beam of light pertains to predetermined wavelength;
encoding the change of spin event of the negatively charged sub-atomic particle into digital information based on the determined spin of the negatively charged sub-atomic particle.
2. The method (100) as claimed in claim 1, wherein the single electron
transistor corresponds to a field effect transistor configured to have an
isolated conducting channel, wherein the field effect transistor includes a
first tunnel junction between the first electrode and the conducting channel
and a second tunnel junction between the second electrode and the
conducting channel, wherein movement of the negatively charged sub-

atomic particle through the isolated conducting channel is controlled by a third electrode.
3. The method (100) as claimed in claim 2, wherein entrapment of the negatively charged sub-atomic particle in the isolated conducting channel of the single electron transistor pertains to predetermined magnitude of voltage applied by a user to the third electrode.
4. The method (100) as claimed in claim 1, wherein the spin of the negatively charged sub-atomic particle is determined along a predetermined axis, wherein the predetermined axis pertains to any of a three dimensional orthogonal set of axes, wherein the first spin orientation corresponds to clockwise rotation along the predetermined axis and wherein the second spin orientation corresponds to counterclockwise rotation along the predetermined axis.
5. The method (100) as claimed in claim 1, wherein spin orientation of the entrapped negatively charged sub-atomic particle pertains to predefined and quantized angular momentum, the spin orientation being determined by application of a first magnetic field of predetermined strength, wherein the first magnetic field is inhomogeneous in nature and wherein the first magnetic field is configured to perform deflection of the negatively charged sub-atomic particle, the amount of deflection being predetermined and based on the corresponding spin orientation.
6. The method (100) as claimed in claim 1, wherein the applied second magnetic field pertains to predetermined strength, wherein the photon particles correspond to either the first or the second spin orientation, wherein, interaction between a photon particle and the negatively charged sub-atomic particle results in a first or a second outcome.
7. The method (100) as claimed in claim 6, wherein the first outcome corresponds to preservation of spin orientation of the negatively charged sub-atomic particle and wherein the second outcome corresponds to inversion of spin orientation of the negatively charged sub-atomic particle, wherein preservation and inversion of spin orientations result from

positive alignment and negative alignment of the negatively charged sub-atomic particle with the photon particle. 8. The method (100) as claimed in claim 1, wherein change in spin orientation is encoded and stored as a unit of information based on the original spin orientation of the negatively charged sub-atomic particle, wherein the unit of information represents any of the digital states of 0 and 1.