METHOD FOR MAKING FANCY PALE BLUE OR FANCY PALE BLUE /GREEN
SINGLE CRYSTAL CVD
DIAMOND AND PRODUCT OBTAINED
This invention relates to a method of making fancy pale blue or fancy pale blue/green
diamond material by irradiating diamond material that has been made by a CVD
(chemical vapour deposition) process. The invention also relates to a fancy pale blue
or fancy pale blue/green CVD diamond material per se. The invention further
provides a system for being able to make a desired colour of diamond material within
the fancy blue to blue/green colour range.
The term "fancy-coloured diamond" is a well-established gem trade classification and
is used to refer to unusual coloured diamonds. A useful history and background to
the grading of fancy coloured diamond gemstones, including the use of Munsell
colour charts is given by King et al, in Gems & Gemology, Vol. 30, No. 4, 1994
(pp.220-242).
Diamond materials that exhibit a pronounced amount of colour are known as "fancy"
coloured diamonds in the field. Other diamond materials that do not show such
pronounced colour may be graded using the Gemological Institute of America (GIA)
scale. That scale grades diamond materials alphabetically from D to Z. The GIA
scale is well known. D represents the highest grade and most colourless diamond
material on the GIA scale, and Z represents the lowest grade on the GIA scale,
diamond material of grade Z appearing light yellow to the naked eye. Higher grade
diamond materials (those on the GIA scale nearer to grade D) are generally
considered more desirable than lower grade diamond materials (those nearer to
grade Z), both in the gem trade and for industrial applications. When the colour of
diamond material is more intense that the Z grading it is termed a "fancy" diamond
whatever its colour. However when an attractive colour such as blue is seen in
diamond material it is frequently described as fancy coloured diamond, even though
its saturation may be such as to grade it earlier in the alphabet than Z. When grading
according to the GIA scale, diamond graders use a master set of diamond stones
graded D, E, F etc. up to Z, and ranging in colour from colourless (for all grades up to
F) through pale yellows to darker yellows (G to Z). The diamond material to be
graded is compared against the master set, and then positioned against its nearest
stone in the master set according to its colour saturation. That establishes the colour
grade letter for the diamond to be graded, e.g. H or K. After that colour grade letter
has been established, for grades from G-Z the colour-grader will also establish a
colour to accompany the colour-grade letter. This colour might be for example,
-2-
brown, yellow, or blue. Thus, for example, a stone might be graded H(brown), if its
colour saturation puts it nearest to the H stone in the colour-grader's master set of
colourless to dark yellow stones, and it has a noticeable brown colouration. In terms
of colour designations brown stones have a hue angle in the range oo to less than
goo, and yellow stones have a hue angle in the range goo -130°.
Naturally occurring blue diamonds are known. Type Jib diamond material which
contains substantially no nitrogen, but does contain boron, absorbs red, orange and
yellow light. This diamond material therefore usually appears blue. The introduction
in EP0615g54A (Sumitomo) includes a table setting out the original colours of
various natural rough diamonds including type lib natural blue diamonds.
It is also known to form fancy coloured diamonds, including blue by treating
diamonds that are not originally blue. For example, "Optical Absorption and
Luminescence" by John Walker, "Reports on Progress in Physics", Volume 42, 1g7g_
describes inter alia that irradiation of any diamond produces a blue-green colouration
due to the absorption bands in the red and violet part of the absorption spectrum.
This so-called GR1 absorption band is understood to be caused by neutral isolated
vacancies V0 in the diamond structure, each isolated vacancy being known as a
"GR1 centre". The strength of the GR1 band is linearly related to the irradiation
dose, indicating that the GR1 centre is a purely lattice defect and not related to any
impurity in the diamond. The blue-green colouration of diamond material caused by
irradiation is exemplified in the Walker publication.
EP615g54A and EP316856A describe irradiation of synthetic High Pressure/High
Temperature (HPHT) diamond material with an electron beam or a neutron beam to
form lattice defects (interstitials and isolated vacancies) in the crystal. Thereafter the
diamond crystal is annealed in a prescribed temperature range to form colour
centres. These publications describe the production of purple and red/pink diamond
materials.
A first aspect of the present invention provides a method of making fancy pale blue or
fancy pale blue/green CVD single crystal diamond material comprising the steps of:
i) providing single crystal diamond material that has been grown by a CVD process,
the diamond material having a [Ns0
] concentration less than 1 ppm, which provided
CVD diamond material is colourless, or if not colourless is colour-graded either brown
-3-
or yellow, and if colour-graded brown has a colour grade for a 0.5 ct Round Brilliant
Cut diamond stone of G (brown) or better, and if colour-graded yellow has a colour
grade for a 0.5 ct Round Brilliant Cut diamond stone ofT (yellow) or better; and
(ii) irradiating, the provided CVD diamond material with electrons so as to introduce
isolated vacancies into the diamond material, so that the product of the total vacancy
concentration x path length ([Vr] x L) in the irradiated diamond material at this stage,
or after a further post-irradiation treatment, is at least 0.072 ppm em and at most 0.36
ppm em, whereby the diamond material becomes fancy pale blue or fancy pale
blue/green in colour.
The term Ns0 refers to single substitutional nitrogen atoms in the diamond material.
The perceived colour of any particular diamond stone depends on the size and cut of
the diamond. Therefore, where reference is given to the colour-grade of diamond
material it is usual in the field to quote this in terms of a standard size, usually 0.5
carat (ct), and a standard cut, usually round brilliant cut (often known as RBC or rbc).
For any given diamond stone, be it larger or smaller than 0.5 carat, or round brilliant
cut or any other cut, models are available to adjust the colour-grade to that for the
standard size and cut. Therefore, the provided diamond material used in the method
according to the first aspect of the invention may have any size or cut, but its colour
grade where specified is adjusted to the colour grade for that diamond material of
standard 0.5 carat size, and standard round brilliant cut .
The product of isolated vacancy concentration x path length limits can be expressed
as:
0.36 ppm em <::: [Vr] x L <::: 0.072 ppm em
Knowing that 1 ppm = 1. 76 x 1017 cm-3 this can alternatively be written as:
2.04 x 10-18 cm-2 <::: [Vr] x 1: <::: 4.09 x 1 o-19 cm-2
The path length for a round brilliant polished gem is assumed to be 2 times the depth
of the stone. For example, for a 0.5 ct round brilliant cut diamond material with a
stone depth of 0.3 em and therefore an average path length of 0.6 em - the limits
would be:
-4-
0.6 ppm<:: [Vr] <:: 0.12 ppm
The CVD diamond provided in step (i) of the method according to the first aspect of
the invention shall be referred to in this specification as "the provided CVD diamond".
The step of actually growing the CVD diamond material may or may not form part of
the method of embodiments of the invention. Providing a CVD diamond material
may simply mean, for example, selecting a pre-grown CVD diamond material.
The provided CVD diamond material in the method of the present invention has a
[Ns~ concentration (that is a concentration of single substitutional nitrogen defects)
less than 1 ppm. The colour of the provided CVD diamond material may vary
according to the [Ns~ concentration, and the manner in which the diamond material
has been grown. It is known that [Ns~ defects themselves introduce a yellow
colouration into diamond material, particularly at concentrations greater than 0.3 ppm
in stones bigger than a 0.3 ct rbc.
l~t is also known that the presence of the low concentrations of nitrogen in a CVD
growth environment can affect the nature and concentration of other defects that are
incorporated in a CVD synthetic diamond material as the diamond material grows,
and that at least some of these other defects provide colour centres contribute to the
colour of CVD diamond material, typically introducing a brown colouration to the
diamond material.
It is also known that these colour centres that contribute to the brown colouration of
CVD diamond grown in the presence of low concentrations of nitrogen are unique to
single crystal CVD diamond, or to pieces cut or produced from layers of single crystal
CVD diamond. It is furthermore known that the colour centres contributing to brown
colouration in CVD diamond are different from those contributing to any brown
colouration observed in natural diamond because the defects in the CVD diamond
material cause absorption bands in the absorption spectra of the grown CVD
diamond material that are not found in the absorption spectra of natural diamond.
Evidence for this comes from Raman scattering from non-diamond carbon
observable with an infrared excitation source (e.g. 785 nm or 1064 nm) which is not
observed for brown natural diamond. Further, it is known that these colour centres in
natural diamond material anneal at a different temperature to those in CVD diamond
material.
-5-
It is believed that some of the colour centres contributing to the brown colouration
seen in CVD synthetic diamond grown in processes in which low concentrations of
nitrogen are introduced relate to localised disruption of the diamond bonding within
the single crystal CVD diamond. The exact nature of the defects is not fully
understood, but the use of electron paramagnetic resonance (EPR) and optical
absorption spectroscopy techniques have been used to study the nature of the
defects and improve our understanding somewhat. The presence of the nitrogen in
the grown CVD synthetic diamond material can be evidenced by looking at
absorption spectra for the grown CVD diamond material, and analysis of these
spectra gives some indication of the relative proportions of different types of defect
present. A typical spectrum for grown CVD synthetic diamond material grown with
nitrogen added to the synthesis environment shows a peak at about 270 nm, which is
generated by the presence of neutral single substitutional nitrogen (N5°) atoms in the
diamond lattice. Additionally peaks have been observed at about 350 nm and
approximately 510 nm corresponding to other defects characteristic and unique to
CVD synthetic diamond material, and furthermore a so-called "ramp", that is a rising
background of the form c x J\-3 has been observed, where cis a constant and J\ is the
wavelength. While the Ns0 is primarily identifiable by its peak at 270 nm, it also
contributes in smaller amounts to the absorption spectrum at higher wavelengths, in
particular at wavelengths in the visible part of the spectrum, which is generally
considered to cover the wavelength range 350 nm to 750 nm.
It is the combination of features evident in the visible part of the absorption spectrum
of the CVD diamond material, i.e. (a) the Ns0 contribution in the visible part of the
spectrum, (b) the 350 nm peak, (c) the 510 nm peak and (d) the ramp feature, that
affect the perceived colour of the diamond material and are believed to be
responsible for the brown colour typically seen in nitrogen doped CVD synthetic
diamond material. The peaks at 350 nm and 510 nm, are not seen in the absorption
spectra of natural diamonds, nor in the absorption spectra of other synthetic
diamonds, for example synthetic HPHT diamonds of the type described in
EP615954A. For the purposes of this specification, all defects other than the Ns0
defects that contribute to the absorption spectrum in the visible part of the spectrum,
which we have discussed above as the 350 nm, 510 nm and ramp features, will be
referred to collectively as "X defects". As noted above, at this time the structural
nature of these defects at an atomic level is not understood, merely their effect on the
;::~,.grown diamond material's absorption spectra. Without binding the invention in any
way, it is thought that the nature of the defects responsible for the brown colouration
-6-
might be related to the presence of multi-vacancy clusters (each cluster being made
up of tens of vacancies e.g. 30 or 40 vacancies or more) that are grown-in under
large growth rates, concomitant with the addition of nitrogen to the plasma to a
hydrogen I methane (H2/CH4) source gas. Such clusters are thermally unstable and
may be removed to some degree, by high-temperature treatment (i.e. annealing). It
is thought that smaller vacancy-related defects, such as a NVH- (nitrogen-vacancyhydrogen)
defects that are made up of nitrogen and hydrogen and a missing carbon
atom, may be partially responsible for the brown colour and these defects may also
be removed by high-temperature treatment.
Depending on the method of manufacture, and the [Ns~ concentration, the provided
CVD diamond material used in methods according to the invention may appear
colourless, near colourless, pale yellow, or pale brown. According to methods of the
present invention, the colour of the provided CVD diamond is graded either
colourless or brown or yellow, and if brown is graded G (brown) or better, and if
yellow is graded T (yellow) or better (for a 0.5 carat round brilliant cut - RBC) using
the Gemological Institute of America (GIA) scale. As noted above that scale grades
diamond materials alphabetically from D to Z, diamond material being colour-graded
by comparing their colour intensity or saturation (rather than the actual hue - e.g.
yellow or brown) to stones of known saturation under controlled lighting and precise
viewing conditions. D represents the highest grade and most colourless diamond
material on the GIA scale and Z represents the lowest grade on the GIA scale,
diamond material of grade Z typically appearing pale yellow or brown to the naked
eye. Higher grade diamond materials (those on the GIA scale nearer to grade D) are
generally considered more desirable than lower grade diamond materials (those
nearer to grade Z), both in the gem trade and for other applications; therefore when
we say graded G or better we mean graded G or a letter earlier in the alphabet than
G. Diamond materials with a yellow or brown hue are graded alphabetically on the
same scale and against the same master set of diamonds for each colour-grade.
Therefore a grade of G (brown) means there is some colour and the colour
component is brown. Diamond material graded G (yellow) would have the same
amount of colour as diamond material graded G (brown) but the colour component
would be yellow rather than brown. Typically brown diamond material has a hue
angle <90°, and yellow diamond material has a hue angle between goo - 130°.
Diamond material graded F or better has no visible colour and is graded
alphabetically only, or alphabetically followed by ''colourless" in .parentheses. If
diamond material has a colour with a yellow or brown hue that is more intense than
-7-
the Z grading it enters the realm of "fancy" coloured diamond material. As noted
above, diamond material with a detectable hue other than yellow or brown, such as
blue, which has a colour strong enough to be recorded, is also referred to as being
"fancy". Diamond material with a blue hue will therefore be termed ''fancy" when the
intensity of colour is lower than would be the case for yellow or brown coloured
diamond.
According to the present invention, a colour grade of G or better is advantageous for
any brown provided diamond material, in order after irradiation to achieve a fancy
pale blue diamond material. On the other hand, a colour grade of T or better is
advantageous for any yellow provided diamond material, this resulting in a fancy pale
blue/green diamond material after irradiation. The amount of yellow in the provided
diamond material may be increased by increasing the [Ns0
] concentration, providing
this can be done without increasing the X defects, and their associated brown
colouration. We have advantageously been able to grow CVD diamond with low and
controlled levels of nitrogen whilst keeping the concentration of X defects to a
minimum. This is not trivial for CVD growth. It advantageously not only provides
nitrogen in the CVD growth process which may be advantageous for morphology
reasons, but also for some embodiments allows sufficient nitrogen to be present to
provide a yellow hue in the provided diamond, which after irradiation according to the
invention results in a pale blue/green diamond material. We have advantageously
discovered that it is possible to control the nitrogen concentration in the CVD
diamond to within 20% of the target whilst maintaining a low concentration of brown
defects. This advantageously allows the hue angle of the treated (irradiated)
diamond material to be controlled in the range of blue to blue-green as desired.
An alternative or additional manner of defining the colour of the provided CVD
diamond material is in terms of its room temperature absorption spectrum. It is
advantageous if the above-mentioned X-defects are minimised, and contribute little
to the absorption spectrum of the provided diamond material. Typically, where [Ns~
concentrations are greater than 0.1 ppm in the provided diamond material, but less
than 1 ppm, it is preferred that the total integrated absorption in the visible range from
350 nm to 750 nm that is attributable to defects other than Ns0 is less than 90%, i.e.
the brown inducing X-defects are minimised. Where [Ns0
] concentrations are zero or
very low, for example less than 0.1 ppm, the total integrated absorption in the visible
range-from::350:nm to_750 nm.that is attributable to def:ects other thari N5° is likely to
be greater than 90% even if the brown-inducing X-defects are very low, simply
-8-
because [Ns0
] concentrations alone are zero or very low. In these cases it is
advantageous if the absorption coefficient (when the spectra have been normalised
to 0 cm·1 at 800 nm) at 350 nm is less than 0.5 cm·1 and at 510 nm is less than 0.3
cm·1
, these low absorption coefficients being an indicator of a low level of brown
inducing X-defects in the diamond material. It is noted that where [Ns~ concentrations
are greater than 0.1 ppm the absolute values of the absorption coefficients at 350 nm
and 510 nm could be greater than 0.5 cm·1 and 0.3 cm·1 respectively even when [X
defect] concentrations are low, because of the contribution to the absorption spectra
at the 350 nm and 510 nm wavelengths from the N5° defects themselves.
Another aspect of the present invention provides a method of making fancy pale blue
or fancy pale blue/green CVD single crystal diamond material comprising the steps
of:
i) providing single crystal diamond material that has been grown by a CVD process,
the diamond material having a [Ns~ concentration less than 1 ppm, wherein the total
integrated absorption in the visible range from 350 nm to 750 nm that is attributable
to defects other than Ns0 is greater than 90% then the absorption coefficient at 350
nm is less than 0.5 cm·1 and the absorption coefficient at 510 nm is less than 0.3 cm·1
and
(ii) irradiating, the provided CVD diamond material with electrons so as to introduce
isolated vacancies into the diamond material, so that the product of the total vacancy
concentration x path length, [Vr] x L in the irradiated diamond material at this stage,
or after a further post-irradiation treatment, being at least 0.072 ppm em and at most
0.36 ppm em, whereby the diamond material becomes fancy pale blue or fancy pale
blue/green in colour.
For all examples used in this specification absorption peak heights and integrated
absorption values used to calculate the percentage of the absorption of the provided
CVD diamond attributable to defects other than N8° quoted in this specification are
measured using a UV/visible absorption spectrum of the synthetic CVD diamond
material taken at room temperature.
All room temperature absorption spectra mentioned herein were collected using a
Perkin Elmer Lambda,..~ 9 spectrometer. The data recorded;rih the .spectra ("the
measured spectrum") were processed in the following way to give information on the
-9-
proportion of the measured absorption in the range 350 nm to 750 nm that could be
attributed to Ns0 and the proportion of that measured absorption that can be attributed
to other defects (the X defects).
a. A reflection loss spectrum was created using tabulated refractive index data
and standard expressions for the reflection loss for a parallel-sided plate. The
refractive index was determined according to Peter's equation [ Z. Phys., 15 (1923),
358-368)] and subsequent reflection loss derived using the standard Fresnel
equation.
b. The reflection loss spectrum was subtracted from the measured absorbance
data and an absorption coefficient spectrum for the example is created from the
resulting spectrum.
c. In order to determine the component of the measured spectrum that was
attributable to N8°, an absorption spectrum for type lb HPHT synthetic diamond (for
which the absorption is attributed solely to Ns0
) was scaled until it is substantially
removed the 270 nm peak from the measured spectrum when subtracted from it.
This scaling allows the concentration of nitrogen to be determined.
d. Using the visible region of the spectrum as stretching from 350 nm (i.e.
3.2618 eV) to 750 nm (i.e. 1.6527 eV), the integrated absorption in the visible region
was determined for the measured example spectrum and for the component of it
attributable to N8°, and the percentage of the integrated absorption that is attributable
to Ns0 defects calculated.
e. In practice reflection losses are generally greater than the theoretical values
and this makes it difficult without resorting to wavelength specific calorimetry
methods to determine absolute absorption coefficient values. In order to correct for
additional losses not directly related to absorption the following routine was used.
Towards lower energies it was generally the case that below a particular energy the
measured absorption no longer showed significant variation with energy. Absorption
coefficient data were shifted so that absorption coefficient was zero at 800 nm
According to different ~mbodiments of methods according to the pr~~~.ntinvention,
. ·· .• ·.J;: .. c . .- '. • . • ... ~i,.c, · .. ·; · • .
the provided CVD diamond may or may not contain N8°. Where it does contain Ns0
:.
-10-
the concentration of [Ns ~ present in the synthetic CVD diamond material of the
present invention may be measured using EPR for levels <5x1015 cm-3 and using UV
visible optical absorption techniques for higher concentrations.
[Ns 0
] in the neutral charge state content can be measured by using electron
paramagnetic resonance (EPR). Whilst the method is well-known in the art, for
completeness it is summarised here. In measurements conducted using EPR, the
abundance of a particular paramagnetic defect (e.g. the neutral single-substitutional
nitrogen defect) is proportional to the integrated intensity of all the EPR absorption
resonance lines originating from that centre. This permits the concentration of the
defect to be determined by comparing the integrated intensity to that which is
observed from a reference sample, provided care is taken to prevent or correct for
the effects of microwave power saturation. Since continuous wave EPR spectra are
recorded using field modulation, double integration is required to determine the EPR
intensity and hence the defect concentration. To minimise the errors associated with
double integration, base line correction, finite limits of integration, etc., especially in
cases where overlapping EPR spectra are present, a spectral fitting method (using a
Nelder-Mead simplex algorithm (J. A. Neider and R. Mead, The Computer Journal, 7
(1965), 308)) is employed to determine the integrated intensity of the EPR centres
present in the example of interest. This entails fitting the experimental spectra with
simulated spectra of the defects present in the example and determining the
integrated intensity of each from the simulation. Experimentally it is observed that
neither a Lorentzian nor Gaussian line shape provides a good fit to the experimental
EPR spectra, therefore a Tsallis function is used to produce the simulated spectra
(D.F. Howarth, J.A. Weil, Z. Zimpel, J. Magn. Res., 161 (2003), 215). Furthermore,
in the case of low nitrogen concentrations, it is often necessary to use modulation
amplitudes approaching or exceeding the line width of the EPR signals to achieve a
good signal/noise ratio (enabling accurate concentration determination within a
reasonable time frame). Hence pseudo-modulation is employed, with the Tsallis line
shape in order to produce a good fit to the recorded EPR spectra (J.S. Hyde, M.
Pasenkiewicz-Gierula, A. Jesmanowicz, W.E. Antholine, Appl. Magn. Reson., 1
(1990), 483). Using this method the concentration in ppm can be determined with a
reproducibility of better than ±5%.
The technique of UV-visible absorption spectroscopy for measuring higher [N5~
concentrations is well'-knownijr:fthe,art, and involves measurements usingi'ttie 270
nm peak of the absorption spectrum of the diamond material.
-11-
Nitrogen may also be present in the positive charge state (N+), the concentration of
W is found by measuring the peak height of the feature at 1332 cm-1 in the FTIR
spectrum. SIMS techniques may also be used to obtain a total nitrogen
concentration for the diamond material if the concentration is within the detection
limit.
As noted above, a colour grade of G or better is advantageous for any brown
provided diamond material, while a colour grade ofT or better is acceptable for any
yellow provided diamond material. Also as noted above, where small amounts of
nitrogen are present in the source gas, and hence in the provided diamond material,
then this is usually associated with the introduction also of so-called X-defects that
introduce a brown colouration to the CVD diamond material. According to certain
embodiments of the invention, where small amounts of nitrogen are present in the
CVD diamond material special methods are carried out in order to result in a
provided CVD diamond material in which any brown colouration (thought to be due to
these X-defects) is avoided, or at least minimised. Where such brown colouration is
minimised in this way, then [Ns~ concentrations may be up 1 ppm, since any yellow
colouration resulting from the presence of the Ns0 defects themselves will result in
levels of N5° that give a colour grade ofT (yellow) or better. Practically for reasons of
gas purity or diamond properties, or where it is desirable to achieve a more bluegreen
hue rather than a blue hue, it may be advantageous to have [N 5°]
concentrations towards the upper limit of 1 ppm.
Especially where the provided CVD diamond material used in the method according
to the present invention has a [Ns~ concentrations towards the upper limit of 1 ppm,
then the absorption spectrum may have a total integrated absorption in the visible
range from 350 nm to 750 nm such that less than 90% of the integrated absorption is
attributable to defects other than Ns0 defects. i.e. the so-called X-defects thought to
be responsible for the brown colouration contribute less than 90% of the integrated
absorption in the visible range.
It is also envisaged in this invention to use provided CVD diamond material with no,
or only very small amounts of [Ns~ present. In these cases since there are only very
· small amounts of [N8 °] present, in general there will consequently be similarly very
low or no X, defects and consequently little or no brown. colouration (although -under: ·'
certain growth conditions this maynotbe case). This can be quantified by specifying
-12-
that the absolute coefficients in the absorption spectrum 350 nm and 510 nm
respectively are less than 0.5 cm·1 and 0.3 cm·1
• So where there is little or no [Ns 0
]
present, then any colouration of the diamond material is likely to be due to any small
amounts of brown (rather than yellow which results from N5° itself), and in this case
the provided CVD diamond material has a colour grade G (brown) or better.
Advantageously such a material may have the following characteristics in its
absorption spectrum (when the absorption at 800 nm has been scaled to 0 cm-1
):
Designation Starts Ends Peak Absorption coefficient at
(nm) (nm) (nm) peakj_cm·1l
270 nm 220 325 270 < 0.8
Ns0
350 nm band 270 450 350 < 0.5
Part of "X" ±10
510 nm band 420 640 510 < 0.3
Part of "X" ±50
Methods of CVD diamond material growth are well established and have been
described extensively in the patent and other literature, for example in WO
03/052177. These previously documented methods for growing CVD diamond
material are believed to result in diamond material with an absorption spectrum with
a total integrated absorption in the visible range from 350 nm to 750 nm such that the
contribution of other defects to the visible part of the spectrum would be greater than
90%. Since these other defects are known to lead to the characteristic brown
colouration of CVD diamond containing nitrogen, these known prior art CVD growth
processes are not suitable for directly growing the provided CVD diamond material
used in the method of the present invention.
One of the above-mentioned special methods that can be carried out in order to
result in a provided CVD diamond material in which any brown colouration (thought
to be due to the aforementioned X-defects) is avoided is by using a CVD growth
process in which the source gas contains carbon, hydrogen, nitrogen and oxygen,
rather than the more usual carbon hydrogen and nitrogen. For example, oxygen may
be added to the process gas at a concentration of at least 1 0000 ppm in the gas
phase. In particular, the provided CVD diamond material in step (i) of the method
according to the first aspect of the invention may be grown directly by the process
described in GB application GB0922449.4 and US provisional application USSN
61i289,282 the entire disclosures of which are incorporated -herein by reference .
.~ :;~;~? -~ . . . ....• ·,, ..·· \· t~l~~ ~~ .. :~ ' ~.--.J -~<. ,· .. · . ·.. . :·. .. ·:~t,'(· ·,_ .~.
Specifically the method involves providing a substrate; providing a source gas; and
-13-
allowing homoepitaxial diamond synthesis on the substrate; wherein the synthesis
environment comprises nitrogen at an atomic concentration of from about 0.4 ppm to
about 50 ppm; and wherein the source gas comprises: (a) an atomic fraction of
hydrogen Ht. from about 0.4 to about 0.75; (b) an atomic fraction of carbon, Ct. from
about 0.15 to about 0.3; (c) an atomic fraction of oxygen, Ot. from about 0.13 to about
0.4; wherein Ht + Ct + Ot = 1; wherein the ratio of atomic fraction of carbon to the
atomic fraction of oxygen Ct:Ot. satisfies the ratio of about 0.45:1 < Ct:Ot < about
1.25:1; wherein the source gas comprises hydrogen atoms added as hydrogen
molecules, H2, at an atomic fraction of the total number of hydrogen, oxygen and
carbon atoms present of between 0.05 and 0.4; and wherein the atomic fractions Ht.
Ct and Ot are fractions of the total number of hydrogen, oxygen and carbon atoms
present in the source gas. This method of growing CVD diamond material shall be
referred to in the specification as the "added oxygen CVD growth process".
Depending on the exact process parameters used (for example the growth substrate
used, the pressure used, and the amount of nitrogen in the source gas), the above
added oxygen CVD growth process may result directly in providing diamond material
in which less than 90% of the integrated absorption in the visible range from 350 nm
to 750 nm is attributable to defects other than N5° defects (the X-defects), or not. In
general the added oxygen CVD growth process allows a skilled worker to introduce
higher percentages of nitrogen than would be possible with standard CVD processes,
while reducing the number of X defects leading to the brown colouration. Thus, the
present invention also envisages using the added oxygen CVD growth process to
introduce such high concentrations of nitrogen that the number of other defects is
also significant and the resultant grown diamond material has greater than 90% of
the integrated absorption in the visible spectrum from 350 nm to 750 nm attributable
to X defects. Such provided diamond material could then be treated by a subsequent
high temperature anneal as described hereinafter to remove some or all of those
defects. Tailoring the added oxygen CVD growth process so as to produce the
desired diamond material defect concentration, and consequent absorption
spectrum, will be a matter of simple experimentation for the person skilled in the art.
The CVD diamond material grown by the added oxygen CVD growth process may be
used directly as the provided CVD diamond material in the method according to the
invention. This route from CVD growth stage to formation of the provided diamond
. material is.illustrated.as ~·route A" in Figure 1 of the 'accompanying drawings. . ::
-14-
Instead of being used directly as the provided diamond material in the method
according to the invention, the CVD diamond material grown by the added oxygen
CVD growth process may be considered to be a added-oxygen-CVD-grownprecursor-
diamond-material that is then subjected to a high temperature anneal at a
temperature of at least 1600°C, or at least 1800°C, or at least 2000°C in order to form
the provided CVD diamond material. A CVD diamond material made by the added
oxygen CVD growth process and then subjected to the high temperature annealing
process may form the provided CVD diamond as used in methods according to the
invention. This route to the provided CVD diamond material is illustrated as route B
in Figure 2. It is thought that this preliminary high temperature annealing process
may reduce still further any X defects in the grown CVD diamond material, and that
this may be advantageous for certain embodiments. The high temperature annealing
step might be done on an as grown or processed stone.
Another possibility is for precursor CVD diamond material to be grown using a more
conventional CVD process, for example of the type disclosed in WO 03/052177.
Such a process, as noted above may result in diamond material with an absorption
spectrum with a total integrated absorption in the visible range from 350 nm to 750
nm such that greater than 90% of the integrated absorption would be attributable to
the undesirable brown colouring X-defects. We shall refer to this diamond material
as the "traditionai-CVD-grown precursor diamond material" in this specification, the
word precursor being used to show it is a grown CVD diamond material that is
different from and precedes the "provided CVD diamond material" defined by the
method of the present invention. The word traditional is used to distinguish the route
to the CVD grown precursor material from that described for route B above. We
have found that if the traditionai-CVD-grown precursor diamond material is subjected
to the above mentioned high temperature annealing process it can result in diamond
material in which less than 90% of the integrated absorption is attributable to defects
other than Ns0 defects (the brown-inducing X-defects). This route to the provided
diamond material is shown in Figure 1 as "route C".
It is also envisaged in the present invention to use as the provided diamond material
a material containing very low [Ns0
] concentrations, e.g. less than 0.1 ppm. These
materials may be grown using a process with very low, or zero, nitrogen
concentrations in the source. gas. The resultant grown CVD. diamond materials
. consequently contain no ·or· rn•nimal X defects, since these :X defects .are. thought to
result from structural and charge changes in the diamond material as a result of
-15-
nitrogen in the diamond atomic structure; if the nitrogen is absent or minimal, then
those structural changes do not take place or take place to a minimal extent.
Therefore, certain embodiments of method according to the invention use a provided
CVD diamond material having a [Ns'1 concentration less than 0.1 ppm.
Methods of making CVD diamond material containing very low or zero [Ns ~
concentrations are known in the art. For example, they are described in
W0/019663A1, W0/019664A1, WO 2010/010352A1, and WO 2010/010344A1, the
entire disclosures of which are incorporated herein by reference.
W0/019663A1, for example, describes a CVD diamond material particularly suitable
for electronic applications, where the level of any single impurity is not greater than 5
ppm and the total impurity content is not greater than 10 ppm. Preferably the level of
any impurity is not greater than 0.5 to 1 ppm and the total impurity content is not
greater 2 to 5 ppm (where "impurity" excludes hydrogen and its isotopic forms). In
the method described in W0/019663A1 the impurity content of the environment in
which the CVD growth takes place is controlled such that growth is in the presence of
an atmosphere containing substantially no nitrogen, i.e. less than 300 ppb, has a
molecular fraction of the total gas volume, and preferably less than 100 ppb, and the
substrate onto which it is grown is substantially defect free.
W02010/010352 A1, for example, describes a method of making high chemical
purity and high isotropic purity diamond material suitable for use in spintronic
applications. In particular, the method of CVD growth comprises providing a
diamond substrate having a surface which a substantially free of crystal defects, and
providing a source gas mixture comprising high purity gases where the concentration
of nitrogen is about 300 ppb or less, and solid carbon source comprising 12C in an
amount of at least 99% of the total carbon content of the source and activating and/or
disassociating at least a portion of the source gas and the solid carbon source to
form gaseous carbon species and allowing homoepitaxial diamond growth on the
surface of the substrate.
CVD diamond material made by processes described above. e.g. of the type
described in W0/019663A 1, W0/019664A 1, WO 201 0/010352A1, and WO
2010/010344A1, which use substantially no nitrogen will be_referred to hereinafter as
"high pu~Lty CVD~-di~mood material growth processes". :These,.::tF.ocesses are suitable
for forming the provided CVD diamond material used in methods according to the
-16-
invention. Since the high purity provided CVD diamond material so formed contains
substantially no nitrogen, and consequently substantially no X-defects, the provided
CVD diamond material made by these high purity methods will be colourless, near
colourless or pale brown.
The colour of the irradiated diamond material is a combination of the starting colour,
if any, of the provided diamond material and the colour introduced by the irradiation
step introducing isolated vacancies. Other impurities that could introduce colour into
the provided diamond material may in certain embodiments be minimised. For
example, uncompensated boron (isolated boron) may itself introduce a blue colour to
the diamond material. For some embodiments the boron concentration [B] in the
provided diamond material is less than 5x1 015 cm-3
•
It is known that if there is uncompensated boron in diamond material this may be
compensated for by irradiating to introduce isolated vacancies, the isolated
vacancies combining with the boron so that neither the boron, nor those
compensating isolated vacancies impart any colour to the diamond material.
Therefore in some embodiments according to the present invention, if the diamond
material does contain uncompensated boron (for example in a concentration of
>5x1015 cm-2
), then the irradiation step may be carried out so as to introduce
sufficient isolated vacancies not only to combine with the boron but also to achieve
the specified isolated vacancy concentration [Vr]. The level of additional irradiation
needed for boron-compensation can be determined empirically by the person skilled
in the art.
By adding more nitrogen to the provided diamond material using methods in which
brown inducing X-defects are not simultaneously introduced (e.g. the aforementioned
oxygen process), or by eliminating those defects (e.g. by a high temperature
annealing step) then more yellow can be introduced into the provided CVD diamond
material, and hence a blue/green diamond material results after the irradiation step.
This is thought to be because the presence of the Ns 0 in the material results in a
charge transfer of V0 to V. For example, where there is relatively low [N 8°]
concentrations, most of the vacancies present in the provided diamond material are
neutral vacancies V0 which tend to impart a blue colour. When there is relatively
higher [Ns0
] concentrations more negative vacancies v- are present in the provided
'·· diamond material, and, these :tend to impart a blue/green colour. Th~tr\&:inv.ention , · : _,- .
proved a convenient means of tailoring the irradiated diamond material through all
-17-
shades of pale blue to pale blue/green by simple modification of the [Ns '1
concentration. Advantageously controlling the ratio of VN° by starting with different
concentrations of nitrogen in the provided diamond material means that the hue
angle can be varied to achieve the desired colour (between blue and green). Some
embodiments of the invention comprise selecting the [Ns'1 concentration of the
provided diamond material so as to provide a target v-No ratio in the provided
diamond material. In addition to the blue to blue/green colour difference imparted by
the different v-No ratio, there may also be a residual yellow hue from any remaining
nitrogen, which would also tend to result in a greener blue/green diamond material
post treatment.
Another aspect of the present invention provides a system for being able to select
and make a desired colour of diamond material within the fancy blue to blue/green
colour range, having a hue angle within the range 100°-270°; the system comprising
the steps of:
(a) predetermining a target [N5°] concentration for a grown CVD diamond material,
that after irradiation of that grown CVD diamond material will result in the said
desired colour;
(b) growing diamond material by a CVD process that includes introducing sufficient
nitrogen in a process gas in the CVD process so as to achieve the said target [N 5°]
concentration in the grown CVD diamond material, which CVD diamond material has
the properties of the provided diamond material set out in step (i) of method claim 1;
then;
(c) carrying out the irradiation step set out in step (ii) of method claim 1 on the grown
CVD diamond material.
The provided CVD diamond material used in the method according to the first aspect
of the present invention preferably may have at least about 50%, alternatively at least
about 80%, alternatively at least about 90%, alternatively at least about 95% of the
volume of the synthetic CVD diamond material formed from a single growth sector.
This single growth sector is preferably a {1 00} or a {11 0} growth sector. The material
of the single growth sector preferably has N5° levels within ±10% of the mean for
· greater than about 50% ·of thejjteJume of the, growth sector, alternatively graatef'lhanabout
60% of the volume of the growth sector, alternatively greater than about 80%
-18-
of the volume of the growth sector. Using a provided synthetic CVD diamond
material that has been grown from a single growth sector is advantageous as the
CVD diamond material will have fewer surfaces with different crystallographic
orientation (which are the surfaces corresponding to differing growth sectors).
Surfaces with different crystallographic orientations exhibit strongly differential uptake
of nitrogen impurity and a synthetic CVD diamond material comprising more growth
sectors therefore tends to show more undesirable zones with different colour,
resulting from the different concentrations of N5° in different growth sectors.
Where methods according to the invention comprise a preliminary process of growing
the provided CVD diamond, these methods preferably comprise growing the diamond
material to have the above stated percentages formed from a single growth sector.
Another advantage of having provided CVD diamond from predominantly a single
growth sector is that in different growth sectors there may be different quantities,
distributions and types of defects
Using CVD synthetic diamond material rather than natural diamond or HPHT
synthetic diamond material to produce pale blue diamond is advantageous for a
number of reasons. For example, natural diamond is variable in its properties;
therefore making it more difficult to find matching diamonds to be set together for
ornamental use. An advantage of CVD diamond material over natural diamond
material is that the synthetic CVD process and the post growth treatment can be
tailored to achieve the exact hue and saturation of colour desired rather than having
to accept what is available As another example, diamond material produced using
HPHT synthesis techniques exhibits strongly differential uptake of nitrogen impurity
on the surfaces with different crystallographic orientation (which are the surfaces
corresponding to differing growth sectors) that form during synthesis. HPHT does
not normally have a single dominant growth sector, unlike that typically achieved in
CVD. The diamond material therefore tends to show zones with different colours,
resulting from the differing nitrogen impurity concentrations in different growth
sectors. In addition, it is hard to control the HPHT diamond material synthesis
process sufficiently to give a uniform and desired nitrogen concentration throughout
even a single growth sector within the synthesized diamond material. Furthermore,
·.in HPHT diamond material synthesis; it is typical to see impurities resulting from the
.' synthesis.process arnf the .catalysts U':$lijd- .examples would be inclusions £0mprising directions. Thus the two types of material can
be distinguished by their different dislocation structures observed, for example, in an
X-ray topograph. This also provides a route to distinguish CVD from natural type I Ia,
as natural diamond does not show these clear parallel dislocations.
However, obtaining X-ray topographs is an onerous task and clearly an alternative,
less onerous method that enables positive distinction would be desirable.
A synthetic CVD diamond material may be positively distinguished from a synthetic
diamond material synthesized using HPHT techniques by the presence of metallic
inclusions in the HPHT-synthesized material that are incorporated as a result of the
synthesis process. The inclusions are comprised of the metals used as the solvent
catalyst metal, e.g. Fe, Co, Ni etc. Inclusions can vary in size from less than 1 1Jm to
more than 100 IJm. Larger inclusions can be observed using a stereo-microscope
(e.g. a Zeiss DV4 ); whilst smaller inclusion can be observed using transmitted light in
a metallurgical microscope (e.g. a Zeiss "Axiophot").
A further method that can be used to provide positive distinction between synthetic
diamonds produced by CVD and HPHT methods is photoluminescence spectroscopy
(PL). In the case of HPHT-synthesised material, defects containing atoms from the
catalyst metals (typically transition metals) used in the synthesis process (e.g. Ni, Co,
Fe etc.) are frequently present and the detection of such defects by PL positively
indicates that the material has been synthesised by an HPHT method.
-20-
Step (ii) of methods according to the invention comprises irradiating the provided
diamond with electrons. The step of irradiation acts to introduce isolated vacancies V
into the diamond, as discussed hereinbefore.
We have found that irradiating the diamond material with radiation other than electron
radiation does not result in a fancy pale blue or fancy pale blue/green coloured
diamond. In particular we have found that irradiation with neutrons produces a
yellow green coloured diamond.
In general the greater the irradiation dose, the greater the number of isolated
vacancies created. The level of the irradiation dose and any post irradiation treatment
is selected so that [Vr] x L is at least 0.072 ppm em and at most 0.36 ppm em.
Typically for a 0.5 ct rbc this corresponds to a concentration range for [Vr] of 0.12 -
0.6 ppm.
In some embodiments according to the invention the dose of electrons is selected so
as to introduce [Vr] x L in the irradiated diamond material of at least 0.072 ppm em
and at most 0.36 ppm em. In these cases there is preferably no further postirradiation
treatment applied to the diamond material that could significantly affect the
isolated vacancy concentration in the diamond material.
It is possible for the diamond material to be irradiated so as to introduce more than
the final desired concentration of isolated vacancies. In these cases it is possible to
subsequently decrease the concentration of isolated vacancies by a post irradiation
treatment step. We have found that it is possible to decrease the concentration of
isolated vacancies by up to about 50% by such a post irradiation step. The post
irradiation step may comprise annealing the sample, for example at a temperature of
at least 300°C, or at a temperature of at most 600°C. The period of the anneal may
be short, for example, simply ramping up the temperature from room temperature to
the anneal temperature, and then allowing the sample to cool down again, or the
sample may be held at the anneal temperature for a period, of a few or several
hours, for example 2 hours. Without limiting the invention in any way, we believe that
annealing at this temperature may cause any interstitials present in the material to
become mobile and therefore diffuse and recombine with some of the isolated
vacancies and consequently reduce the concentration of the isolated vacancies .
... >i'(f!."' ' ,"~ 1 -~~;.!?}•,' . ' 1 r .fo~~
This over-irradiation (to produce surplus isolated vacancies) followed by an anneal to
-21-
remove those surplus isolated vacancies disadvantageously involves an extra step,
but it may be used in certain circumstances, and provided the resultant post
treatment isolated vacancy concentration is within the prescribed limits falls within the
scope of the present invention.
Therefore other embodiments of method according to the invention comprise an
additional step of post-irradiation treating the irradiated diamond material so as to
achieve [Vr] x L in the irradiated diamond material of at least 0.072 ppm em and at
most 0.36 ppm em. This post-irradiation treatment step may comprise annealing the
irradiated diamond material at a temperature of at least 300°C and at most 600°C. In
these embodiments since a post irradiation anneal may decrease the concentration
of isolated vacancies by up to 50%, then the initial dose of electrons may be selected
so as to introduce [Vr] x Lin the irradiated diamond material of at most 0.72 ppm em.
An additional benefit of irradiating the CVD diamond material is that typically the
colour of the material will be more stable to low temperature annealing and exposure
to UV light compared to untreated CVD diamond. This stabilisation effect is
discussed in G B Application Number 0911075.0, and US Application Number
61/220,663 both filed 26th June 2009, and in GB Application Number 0917219.8 and
US Application Number 61/247,735 both filed 1st October 2009, the entire disclosures
of which are incorporated herein by reference. Thus an advantage of the present
invention is that it results in a blue or blue green diamond material which, in the
absence of the irradiation step of the method of the present invention would show a
measurable difference in at least one of its absorption characteristics in first and
second states, the first state being after exposure to irradiation having an energy of
at least 5.5 eV and the second state being after thermal treatment at 798 K (525°C),
but which following the method of the present invention results in diamond material
that shows little or no colour change when in the said first and second states, given
that the concentration of interstitials has been minimised. Advantageously, in some
embodiments, post irradiation the change in colour saturation value C* between the
first and second states is reduced by at least 0.5 compared with the diamond
material that has not been subjected to irradiation. In some embodiments the change
inC*, post irradiation, of the diamond material in the first and second states is <1. In
some embodiments the irradiated diamond material, or the irradiated diamond
material after a further post-irradiation treatment, may have an absorption coefficient
measured-al7i'Kof at least 0.01 cm·1 at a wavelength .of741 nm; or an absorption
coefficient measured at 77 K of at least 0.01 cm·1 at a wavelength of 394 nm.'
-22-
It is known that the energy of the irradiation determines the penetration of the
irradiation. As a rough approximation every additional MeV of energy of an electron
beam will penetrate an additional 0.7 mm of diamond. Typical electron irradiation
sources are available at 1.5 MeV and 4.5 MeV, and we have found that it is
preferable to use a 4.5 MeV electron source for irradiation to achieve the desired
penetration for typical sized diamonds; e.g. for a 0.5 carat diamond having a
thickness of about 3 mm. Typically the electron beam source may have a 50% scan
width and a 20 rnA current for example at the facility used at lsotron pic.
Electron irradiation is typically carried out with a beam source in the energy range 0.8
MeV to 12 MeV. Optionally the energy that is used is that which introduces a near
uniform concentration of isolated vacancies in the N doped diamond material, while
minimizing the formation of cascade damage e.g. vacancy chains. For the optimum
results reported here it was found that 4.5 MeV provided a good compromise
between these two factors.
Optionally, and particularly for larger samples, rotation of the sample during
irradiation, or repeated rotation followed by irradiation, may be used to assist in
achieving uniformity of the created isolated vacancies throughout the volume of the
stone.
Factors such as diamond temperature, beam energy, beam flux, and even the
starting diamond's properties can affect the [Vr] produced for a fixed experimental
irradiation set-up and time. Irradiation is typically carried out with the sample
mounted under ambient conditions -300 K with only minimal temperature rise during
the irradiation dose (e.g. less than 100 K). However, factors such as beam energy
and beam flux can lead to sample heating. Preferably the sample is held as cold as
possible (with even cryogenic cooling at 77 K being advantageous under some
circumstances) to enable high dose rates without compromising temperature control
and thus minimize the irradiation time. This is advantageous for commercial
reasons. Calibration of the dose applied against the isolated vacancies produced for
the particular provided diamond being used in order to satisfy these limits on [Vr]
concentration introduced will form part of the skilled person's responsibilities before
carrying out the . .method:·bfthe present invention. Such calibration techniques are
routine for the pers"onskilled·in the art.. '.or- ·
-23-
We have also found that the period of irradiation affects the number of isolated
vacancies that are incorporated into the diamond material and the isolated vacancy
incorporation rate is different for different starting materials and starting
temperatures.
A typical irradiation dose for a 0.5 ct rbc diamond stone, when the sample
temperature is -350 K, is 1 x 1017 -1 x 1018 e·cm·2
•
A typical irradiation time for a 0.5 ct rbc diamond stone, when the sample
temperature is -350 K, is 5 - 30 minutes at 4.5 MeV, 20 rnA and 50% scan width
using an instrument such as that found at lsotron pic.
Throughout this specification to measure concentrations of isolated vacancies,
spectra are obtained at 77 K, using liquid nitrogen to cool the samples, since at that
temperature sharp peaks at 741 nm and 394 nm are seen that are attributable to
neutral and negatively charged isolated vacancies respectively. The coefficients that
are used for the calculations of concentrations of isolated vacancies in the present
specification are those set out by G. Davies in Physica B, 273-274 (1999), 15-23, as
detailed in Table 1 below.
Table 1
Defect Calibration v- AND1 = (4.8 ± 0.2) X 10"'0 [V"]
vu AGR1 = (1.2 ± 0.3) X 10"'0 [V'1_
In Table 1, "A" is the integrated absorption (meV cm-1
) in the zero phonon line of the
transition, measured at 77 K, with the absorption coefficient in cm·1 and the photon
energy in meV. The concentration is in cm·3
.
According to methods of our invention [Vr] x L after irradiation, or after a further postirradiation
treatment, is at least 0.072 ppm em, and at most 0.36 ppm em.
The provided CVD diamond material used in the method according to the present
invention, and also the irradiated CVD diamond material resulting from the method of
the present invention may, or may not, form part of a larger piece of diamond "" : . . ·. . ~ . . :.. .
materiaL For .e,xample::fFUt only of the lar~er piece of dia".Jon~ m~(ffJI. ~ay be
irradiated and turned blue, and/or part only of the larger piece of diamond material
-24-
may have the defined absorption characteristics. As would be apparent to the
person skilled in the art multiple layers could also be irradiated and/or have the
required absorption characteristics, so that the provided CVD diamond material used
in the method according to the invention may form part, e.g. one or multiple layers of
a larger piece of diamond material. It is well known that the depth of penetration of
irradiation is dependent on the energy of the irradiation. So in preferred
embodiments an irradiation energy is selected such that the irradiation penetrates
only part of the depth of a CVD diamond material. This means that isolated
vacancies would be introduced only in the penetrated part of the irradiated CVD
diamond material, and hence that penetrated part of the CVD diamond material
would be the "diamond material" used formed by the method of the present invention.
Where the provided CVD diamond material provides only part of a larger piece of
diamond material, as discussed above that provided CVD diamond material alone
may have the advantageous optical properties described for certain embodiments of
the invention. Thus for example a top or embedded layer or layers of a large piece of
CVD diamond material may have a pale blue or pale blue/green colouration. Where
any other non-pale-blue, or blue/green layers are substantially colourless the colour
of the larger piece of diamond material is dominated by the pale blue or pale
blue/green layer(s).
In some embodiments according to the invention at least 50% or at least 60% or at
least 70% or at least 80% or at least 90% or substantially the whole diamond stone
may have substantially the same colour.
In other embodiments according to the invention of diamond stone may comprise
layers or pockets of diamond material of the same colour.
It is an advantage of the present invention that by starting with a CVD diamond
material with a specific nitrogen concentration, that is substantially colourless or palecoloured,
and irradiating the CVD diamond material with electrons, pale blue or pale
blue/green diamond material can be produced. The precise colour (between blue
and green) can be altered by controlling the nitrogen concentration. Advantageously,
low levels of everything else, e.g. other elements that might introduce other colour
are maintained. The irradiation is controlled to introduce a particular concentration of
isolated vacancies in the diarheb(f male.rial, therebyintroducing a fancypale:ful(Je'or ·:
fancy pale blue/green colour. These coloured diamond materials may find particular
-25-
application as gemstones, or as coloured filters or as a cutting tool for example a
scalpel and the like. It should be noted that the terms "colourless" and "white" are
sometimes used synonymously in the field to describe the colour of diamond
materials for gemstones.
The present invention also provides diamond material whenever made by a method
according to the first aspect of the invention.
A fancy pale blue or pale blue/green CVD diamond material in which the colour does
not come solely, or at all, from boron is also new per se. Therefore a second aspect
of the present invention provides a fancy pale blue, or fancy pale blue/green CVD
synthetic single crystal diamond material having either [B] < 1 x 1015 cm·3 or [N]- [B]
< 1 ppm and the following colour characteristics:
Characteristic Range
Hue angle a 100°-270°
optionally 11 oo -230°
optionally 120°-200°
Saturation- C* At least 2 and at most 1 0
optionally 2 - 8
optionally 2 - 6
Lightness - L * >65
optionally > 70
optionally > 72
The colour of the irradiated and annealed diamond can be quantified in a well
established manner using "CIE L*a*b* Chromaticity Coordinates". The use of CIE
L*a*b* Chromaticity Coordinates in diamond is described in WO 2004/022821, the
entire disclosure of which is incorporated herein by reference. This method is
particularly useful for assessing the colour of plates or blocks of diamond material.
The colour of a round brilliant polished diamond can either be assessed by eye by a
trained person or using the Cl E L*a*b* Chromaticity Coordinates if a flat is polished
on to the culet so that there are two parallel polished sides to take a measurement
through. a* and b* are plotted as x and y axes of a graph and the hue angle is
··· measured from the positive a* axis towards the positive b* axis. Thus a hue angle of
greaterthan 90° and less than '180o'·~res'in the upper left quadrant·of the a~b* grapnl"'; ·
-26-
In this scheme for describing colour L* is the lightness and a fourth coordinate C* is
the saturation.
The perceived colour of an object depends on the transmittance/absorbance
spectrum of the object, the spectral power distribution of the illumination source and
the response curves of the observer's eyes. The CIE L *a*b* chromaticity coordinates
(and therefore hue angles) quoted herein have been derived in the way described
below. Using a standard 065 illumination spectrum and standard (red, green and
blue) response curves of the eye (G. Wyszecki and W. S. Stiles, John Wiley, New
York-London-Sydney, 1967) CIE L*a*b* chromaticity coordinates of a parallel-sided
plate of diamond have been derived from its transmittance spectrum using the
relationships below, between 350 nm and 800 nm with a data interval of 1 nm:
s .. = transmittance at wavelength 'A
L .. = spectral power distribution of the illumination
x .. = red response function of the eye
y .. = green response function of the eye
z .. = blue response function of the eye
Where Y0 =LAy,.. L,..
L* = 116 (Y/Yo)113 -16 =Lightness (forY/Y0 > 0.008856)
a*= 500[(X/Xo)113
- (Y/Yo)113
] (for X/Xo > 0.008856, Y/Yo > 0.008856)
b* = 200[(Y/Yo)113
- (Z/Zo)113
] (for Z/Zo > 0.008856)
C* = (a*2 + b*2
)
112 = saturation
hab = arctan (b* I a*) = hue angle
-27-
Modified versions of these equations must be used outside the limits of Y/Yo, X!Xo
and Z/Z0• The modified versions are given in a technical report prepared by the
Commission lnternationale de L'Eclairage (Colorimetry (1986)).
It is standard to plot a* and b* coordinates on a graph with a* corresponding to the x
axis and b* corresponding to the y axis. Positive a* and b* values correspond
respectively to red and yellow components to the hue. Negative a* and b* values
correspond respectively to green and blue components. The positive quadrant of the
graph then covers hues ranging from yellow through orange to red, with saturations
(C*) given by the distance from the origin.
It is possible to predict how the a*b* coordinates of diamond with a given absorption
coefficient spectrum will change as the optical path length is varied. In order to do
this, the reflection loss must first be subtracted from the measured absorbance
spectrum. The absorbance is then scaled to allow for a different path length and
then the reflection loss is added back on. The absorbance spectrum can then be
converted to a transmittance spectrum which is used to derive the CIE L *a*b*
coordinates for the new thickness. In this way the dependence of the hue, saturation
and lightness on optical path length can be modelled to give an understanding of how
the colour of diamond with given absorption properties per unit thickness will depend
on the optical path length.
L *, the lightness, forms the third dimension of the CIE L *a*b* colour space. It is
important to understand the way in which the lightness and saturation vary as the
optical path length is changed for diamond with particular optical absorption
properties. The method described in the preceding paragraph can also be used to
predict how the L*C* coordinates of diamond with a given absorption coefficient
spectrum depend on the optical path length.
The C* (saturation) numbers can be divided into saturation ranges of 10 C* units and
assigned descriptive terms as below.
0-10 weak
10-20 weak-moderate
20-30 moderate
30-40 moderate~strong
40-50 strong
50-60
60-70
70-80+
strong-very strong
very strong
very very strong
-28-
Similarly the L * numbers can be divided up into lightness ranges as follows:
5-15 very very dark
15-25 very dark
25-35 dark
35-45 medium/dark
45-55 medium
55-65 light/medium
65-75 light
75-85 very light
85-95 very very light
There are four basic colour tones defined by the following combinations of lightness
and saturation:
Bright: Light and high saturation,
Deep: High saturation and dark,
Pale: Light and low saturation,
Dull: Low saturation and dark.
Embodiments of the invention will now be described, by way of example, with
reference to the accompanying drawings and examples, wherein:
Figure 1, which has been referred to hereinbefore, is a flow chart which shows routes
for methods according to the invention for obtaining pale blue or pale blue/green
diamond material;
Figure 2 are absorption spectra A, B and C measured at room temperature, where A
is the spectrum for the starting diamond material used in examples 2-4 and 9, B is
the spectrum for the starting material used in example 1 and 8, and C is the spectrum
for the starting material used in examples 5-7;
Figure 3 are UV Visible absorption spectra A,B and C measured at 77 K, where A, B
and care respectively the absorption spectra for examples 2, 3 and 4 each- shown
after irradiation as specified; and
-29-
Figure 4 are absorption spectra A and B measured at 77 K for examples 2 and 6
respectively post irradiation, showing the ND1 and GR1 peaks, which are indicative
of v- and V 0defects respectively.
Examples
HPHT diamond substrates suitable for synthesising single crystal CVD diamond of
the invention were laser sawn, lapped into substrates, polished to minimise
subsurface defects such that the density of defects is below 5 x 103 /mm2, and
generally is below 102/mm. Polished HPHT plates 3.6 mm x 3.6 mm square by 500
IJm thick, with all faces {1 00} having a surface roughness Ra at this stage of less than
1 nm were mounted on a refractory metal disk, and introduced into a CVD diamond
growing reactor.
Growth stages
1) The CVD diamond reactor was pre-fitted with point of use purifiers, reducing
unintentional contaminant species in the incoming gas stream to below 80
ppb.
2) An in situ oxygen plasma etch was performed using 50/40/3000 seem
(standard cubic centimetre per second) of 02/Ar/H2 and a substrate
temperature of 760°C.
3) This moved without interruption into a hydrogen etch with the removal of the
0 2 from the gas flow.
4) This moved into the growth process by the addition of the carbon source (in
this case CH4) and dopant gases. For these examples the CH4 flowing at 165
seem, nitrogen was present in the process gas at different levels for the
different examples, provided from a calibrated source of for example a source
containing 1 00 ppb N2 either as air in Ar or N2 in H2, and for some examples
02 was also present in the process gas.
5)
Example Nitrogen dopant present Oxygen (02) flow present in
in the process gas (ppm) the process gas (ppm)
1 and 8 1.8 0
2-4 and 9 0.09 0
5-7 1.0 13700 ' .
..
-30-
6) On completion of the growth period, the substrate was removed from the
reactor and the CVD diamond layer removed from the substrate by laser
sawing and mechanical polishing techniques.
7) This produced a CVD sample which had typical dimensions -3.1x5x5 mm
and a typical average path length for light of 6 mm.
This grown CVD diamond is the "provided diamond" defined by the claims of the
present specification.
Figure 2 are absorption spectra A, Band C, where spectrum A is that of the starting
diamond material used in examples 2-4 and 9, and represents diamond material
grown by a high purity CVD growth process. In these examples the percentage of
the integrated absorption in the visible spectrum of the provided CVD diamond
attributable to defects other than Ns0 is >90%. In these examples, this is because the
absolute [Ns ~ concentration is low, as is shown by the fact that there is no distinct
peak at 270 nm. The material does not have a brown colouration as the absorption
at 510 and 350 nm are <0.5 and 0.3 cm·1 respectively. These high purity materials
are colourless and are a suitable provided CVD diamond material for irradiation
according to the method of the invention. In Figure 2, spectrum B is that of the
starting material used in examples 1 and 8. This starting material is a CVD diamond
material grown by a traditional CVD growth process with no oxygen in the source
gas. In these examples the percentage of the integrated absorption in the visible
spectrum of the starting CVD diamond material attributable to defects other than N8°
is >90%, and furthermore the absorption at 510 nm and 350 nm are >0.5 cm·1 and
0.3 cm·1 respectively. The starting diamond materials of examples 1 and 8 are,
therefore not untreated suitable starting materials for the irradiation method of the
present invention and are pale brown prior to irradiation. However if treated, e.g.
HPHT annealed prior to irradiation as shown in example 8 they are suitable precursor
diamond materials for the irradiation method of the present invention. In Figure 2,
spectrum C is that of the starting material used in examples 5-7 which are diamond
materials grown by a CVD growth process with added oxygen in the source gas. In
this spectrum, the absorption at 510 nm and 350 nm are >0.5 cm·1 and 0.3 cm·1
respectively, however the percentage of the integrated absorption in the visible
spectrum of the provided CVD diamond attributable to defects other than N8° is now
<90%. These examples are suitable starting material for irradiation according to the
method of the present inveiltio-n,and are pale yellow prior to irradiation:::?-.~-
-31-
The electron irradiation of all samples was carried out with a 4.5 MeV electron beam
on 50% scan width and 20 mA beam current). Diamond samples to be irradiated are
mounted in indium on a water cooled copper block to prevent the samples being
heated above 350 K.
Table 3 shows the CVD growth process (or route to the provided CVD diamond
material as indicated in Figure 1, where applicable), the N5° concentrations in ppm,
the percentage of the total integrated absorption attributable to N5° defects for the
diamond material samples provided as above, the absorption coefficients at 270 nm,
350 nm and 510 nm, the irradiation dose, the total isolated vacancy concentration
(and breakdown to neutral and negative isolated vacancy concentrations), and the
colour before and after irradiation.
Table 3 includes a number of comparative examples. Considering each of the
examples in table 3 in turn, example 1 (which is a comparative example) shows
traditionally grown CVD diamond material in which the percentage of integrated
absorption in the provided diamond attributable to defects other than N5°is 91.6%,
and its absorption coefficients at 350 nm is 1.19 cm-1 and at 510 nm is 0.45 cm-1
; its
colour pre-irradiation is pale brown, in other words the provided CVD diamond
material falls outside the criteria set out in method step (i). After irradiation the
observed colour of the diamond material is dull brownish - blue, not the desired fancy
pale blue or fancy pale blue/green of the present invention. Also the colour
characteristics of example number 1 fall outside those specified by the main article
claim of the present invention. Example 1 could be HPHT annealed as shown in
example 8 to make it suitable to make a pale blue/blue-green material, but untreated
is not suitable.
Example 2, 4, 5 and 7 (again comparative examples), uses the provided diamond
falling within the scope of step 1 of the method claim of the present invention, but
introduce a product of total isolated vacancy concentration x path length that are
either lower than required minimum of at least 0.072 ppm em (examples 2 and 5) or
higher than the maximum (examples 4 and 7) 0.36 ppm em. The colour of these
examples after irradiation are not the desired fancy pale blue and fancy pale
blue/green, and the colour characteristics fall outside those defined by the main
article claims.
-32-
Figure 3 shows UV Visible spectra A,B and C taken at 77 K post irradiation where
spectrum A is that of example 2 and indicates (by the height of the GR1 peak) an
isolated vacancy concentration that is too low to impart the desired fancy pale
blue/blue-green colour desired for the present invention; spectrum B is that of
example 3 and indicates an isolated vacancy concentration that is within the scope of
the claim, and will impart the desired fancy pale blue/blue-green colour desired for
the present invention, and spectrum C is that of example 4 and indicates an isolated
vacancy concentration that is too high to impart the desired fancy pale blue/bluegreen
colour desired for the present invention Another indictor of the isolated
vacancy concentrations post irradiation of these samples is shown in Table 3 which
includes columns indicating the VO and v- concentrations post irradiation in ppm, this
data having been calculated by integrating the area under the GR1 and ND1 peaks
respectively_
Example 9 (again a comparative example) uses neutron irradiation rather than
electronic radiation. This results in a vivid yellow diamond material after irradiation,
the C* and L *values are outside the limits of the claims of this patent.
Comparison of the examples also shows how it is possible to modify the hue angle
(and hence the precise perceived colour) within the claimed range by altering the
concentration of Ns0 in the provided diamond. Examples 3 and 6 both produce pale
blue I pale blue green, but the exact hue angle has been modified by introducing
different concentrations of N5°.
Figure 4 which are absorption spectra taking post irradiation for examples 3 and 6,
shows the different ratio of VO and v- defects formed following the same irradiation for
starting materials containing different concentrations of N5°. Spectrum A which is
that of example 3 , which contains low [Ns0
] concentration shows virtually no ND1
peak at 394 nm (indicating that the sample contains virtually no v- defects). In
contrast spectrum B which is that of example 6 which contains higher [Ns~
concentration shows an increased height of ND1 peak at 394 nm (indicating
increased presence of v- defects). Both spectra A and B show comparable GR1
peaks, and so the ratio of GR1 peak: ND1 peak, indicating the ratio of V0:v· defects is
higher for spectrum A (example 3) than for spectrum B (example 6).
Example CVD N.u cone. Percentage of Abs Abs Abs
Number Growth In the Integrated at at at
chemistry provided absorption in 270 350 510
(+Initial CVD visible spectrum nm nm nm
treatment diamond of provided CVD
e.g. high T (ppm) diamond,
anneal) attributable to
defects other
than N8°
1* Traditional 0.4 91.6 2.23 1.09 0.45
CVD
growth
process
no
treatment
2* High Purity 0.012 98.5 0.15 0.13 0.06
CVD 0
growth
process
(low Xdefectsbrown-
and
low
nitrogen)-
no
treatment
3 High Purity 0.012 98.5 0.15 0.13 0.06
cvo 0
growth
process
(low Xdefectsbrown-
and
low
nitrogen)-
no
treatment
* Comparative Example
vu Vconc Colour in Irradiation VU cone
cone (ppm) the dose (ppm)
(ppm) provided post
diamond lrrad
Preirradiation
(Colour
grade If 0.5
ct RBC)
<0.003 <0.003 Pale brown 2.6 X 10 0.25
e·/cm2
<0.003 <0.003 Colourless 9.7 X 10'V 0.093
e·/cm2
<0.003 <0.003 Colourless 2.4 X 10 0.17
e·/cm2
V-conc Observed
(ppm) colour
post after
lrrad irradiation
0.12 Dull
brownish
blue
0.0054 Colourless
0.006 Pale, bright
greenish
blue
Colour
characteristics
(c*, L *and a)
L*- 54.8C*-
9.88
a= 94.41°
L*- 84.9
c· = 1.1
a= 74.6°
L *- 75.8
c· = 3.7
a= 179.5°
I
I
I
I w
w
I
Example CVD Ns" cone. Percentage Abs Abs Abs IV" v Colour Irradiation IV" cone v. cone Observed Colour
Number Growth In of at at at cone cone Pre· dose (ppm) post (ppm) post colour characteristics
chemistry provided Integrated 270 350 510 (ppm) (ppm) Irradiation Irradiation Irradiation after (c*, L* and a) (+initial cvo absorption nm nm nm (Colour Irradiation
treatment diamond In visible grade if 0.5
e.g. high T (ppm) spectrum of ct RBC)
anneal) provided
CVD
diamond,
attributable
to defects
other than
Ns0
4* High Purity 0.012 98.5 0.15 0.13 0.06 <0.003 <0.003 Colourless 1.9x10'a 0.68 0.020 Vivid, bright L*-61.4
CVD 0 e·/cm2
growth greenish
process blue C* = 20.2 (low Xdefectsbrown-
and
w .;...
I
low a= 195.7°
nitrogen)-
no
treatment
5* Added 0.35 71.6 1.42 0.63 0.23 <0.003 <0.003 Pale yellow 6.5 X 10lll 0.049 0.052 Colourless L*- 80.97
oxygen e'/cm2
CVD
· growth C* = 4.75 processlow
brown
a= 83.5°
* Comparative example
Example CVDGrowt N.u cone. Percentage Abs
Number h In of at
chemistry provided Integrated 270
,. (+Initial CVD absorption nm
treatment diamond in visible
e.g. high T (ppm) spectrum
anneal) of
provided
CVD
diamond,
attrlbutabl
e to
defects
other than
N.o
6 Added 0.35 71.6 1.42
oxygen
CVD
growth
processlow
brown
,.7* Added 0.35 71.6 1.42
- oxygen
CVD
growth
processlow
brown
~------ -- - - - -- -
* comparative example
Abs Abs V" y Colour Irradiation
at at cone cone Pre- dose
350 510 (ppm) (ppm) Irradiation
nm nm (Colour
grade If 0.5
ct RBC)
0.63 0.23 <0.003 <0.003 Pale yellow 2.4 X 10
e'/cm2
0.63 0.23 <0.003 <0.003 Pale yellow 1.9x10'0
e'fcm2
V" cone Yconc
(ppm) post (ppm) post
Irradiation Irradiation
0.19 0.082
1.1 0.3
Observed
colour
after
Irradiation
Pale bluegreen
Vivid, bright
blue- green
Colour
characteristics
(c*, L* and a)
L*-80.7
c· = 3.21
a= 142.1°
L* = 54.3
c· = 19.3
a= 189.6°
I w
Cf
Example CVD N."conc. Percentage of Abs at Absat
Number Growth In integrated 270nm 350nm
chemistry provided absorption in
(+initial CVD visible
treatment diamond spectrum of
e.g. high (ppm) provided CVD
T anneal) diamond,
attributable to
defects other
than Ns0
8 Tradition 0.4 91.6 2.23 1.09
aiCVD
growth (0.37 (0.13
process post post
+ HPHT
anneal HPHT HPHT
anneal) anneal)
9* High 0.012 98.5 0.15 0.13
Purity
CVD
growth
process
(low Xdefectsbrownand
low
nitrogen)
-no
treatment
neutron
irradiated
* comparative example
Abs at V' cone Vconc Colour Pre- Irradiation
510nm (ppm) (ppm) irradiation dose
(Colour
grade if0.5
ct RBC)
0.45 <0.003 <0.003 Pale brown 2.4 X 10
(0.04
pre HPHT
e·tcm2
post
HPHT anneal,
anneal) pale yellow
after HPHT
anneal
0.060 <0.003 <0.003 Colourless 1 X 10 '0
n/cm2
V' cone V-conc
(ppm) (ppm)
post post
irradiation irradiation
0.51 0 (within
error of
measure
ment
Observed
colour after
irradiation
Pale
greenish
blue
Vivid green
yellow
Colour
characteristics
(c*, L* and a)
L*- 48.4
C* = 25.23
a= 135.1°
I
I
'
:
I w
0)
I

-37-
CLAIMS
1. A method of making fancy pale blue or fancy pale blue/green CVD single
crystal diamond material comprising the steps of:
i) providing single crystal diamond material that has been grown by a CVD
process, the diamond material having a [Ns0
] concentration less than 1 ppm,
which provided CVD diamond material is colourless, or if not colourless is
colour-graded brown or yellow, and if colour-graded brown has a colour grade
for a 0.5 ct Round Brilliant Cut diamond stone of G (brown) or better, and if
colour-graded yellow has a colour grade for a 0.5 ct Round Brilliant Cut
diamond stone of T (yellow) or better; and
(ii) irradiating, the provided CVD diamond material with electrons so as to
introduce isolated vacancies into the diamond material, so that the product of
the total vacancy concentration x path length, [Vr] x Lin the irradiated diamond
material at this stage, or after a further post-irradiation treatment, being at least
0.072 ppm em and at most 0.36 ppm em, whereby the diamond material
becomes fancy pale blue or fancy pale blue/green in colour.
2. A method according to claim 1, wherein the provided diamond material is
colour-graded brown or yellow, and if colour-graded brown has a hue angle in
the range oo to less than goo for a 0.5 ct Round Brilliant Cut diamond stone, and
if colour-graded yellow has a hue angle in the range 90°-130° for a 0.5 ct
Round Brilliant Cut diamond stone.
3. A method according to claim 1 or 2, wherein there is no further post irradiation
treatment, and the dose of electrons is selected so as to introduce the product
of total isolated vacancy concentration x path length, [Vr] x L in the irradiated
diamond material of at least 0.072 ppm em and at most 0.36 ppm em.
4. A method according to claim 1 or 2, comprising an additional step of postirradiation
treating the irradiated diamond material so as to achieve the product
of total isolated vacancy and at most 0.36 ppm em.
-38-
5. A method according to claim 4, wherein the post-irradiation treatment step
comprises annealing the irradiated diamond material at a temperature of at
least 300°C and at most 600°C.
6 A method according to claim 5, wherein the dose of electrons is selected so as
to introduce the product of total isolated vacancy concentration x path length,
[Vr] x Lin the irradiated diamond material of at most 0.72 ppm em prior to the
post-irradiation treatment step.
7. A method according to any of claims 1-6, wherein with respect to the provided
diamond material, if the total integrated absorption in the visible range from 350
nm to 750 nm that is attributable to defects other than N5° is greater than 90%
then the absorption coefficient at 350 nm is less than 0.5 cm·1 and the
absorption coefficient at 510 nm is less than 0.3 em -1
•
8. A method according to any of claims 1-6, comprising growing precursor
diamond material for use directly, or after further treatment, as the provided
diamond material, the precursor diamond material having an absorption
spectrum with a total integrated absorption in the visible range from 350 nm to
750 nm such that at most 90% of the integrated absorption is attributable to
defects other than [Ns '1-
9. A method according to claim 8 wherein the CVD process includes adding
oxygen in a process gas at a concentration of >10000 ppm of oxygen
molecules in the gas phase.
10. A method according to claim 8 or 9, wherein the step of growing precursor
diamond material comprises providing a substrate and a source gas; and
allowing homoepitaxial diamond synthesis on the substrate to wherein the
synthesis environment comprises nitrogen at an atomic concentration of from
about 0.4 ppm to about 50 ppm; and wherein the source gas comprises: (a) an
atomic fraction of hydrogen Ht, from about 0.4 to about 0.75; (b) an atomic
fraction of carbon, Ct. from about 0.15 to about 0.3; (c) an atomic fraction of
oxygen, Ot. from about 0.13 to about 0.4; wherein Ht + Ct + Ot = 1; wherein the
ratio of atomic fraction of carbon to the atomic fraction of oxygen Ct:Ot, satisfies
the ratio of about 0.45:1 ~ Ct:Ot < about 1.25:1; wherein the source gas
comprises hydrogen atoms added as hydrogen molecules, H2, at an atomic
-39-
fraction of the total number of hydrogen, oxygen and carbon atoms present of
between 0.05 and 0.4; and wherein the atomic fractions Ht, Ct and Ot are
fractions of the total number of hydrogen, oxygen and carbon atoms present in
the source gas.
11. A method according to any of claims 1-7, wherein a target [Ns 0
] concentration is
predetermined according to the desired final colour of the irradiated diamond
material, and the actual [Ns~ concentration in the provided CVD diamond
material is controlled to within 20% of the said target [Ns~ concentration.
12. A method according to any preceding claim, comprising growing a precursor
diamond material, and then annealing the grown CVD diamond material at a
temperature of at least 1600°C to produce the said CVD diamond provided by
step (i).
13. A method according to any preceding claim, wherein the irradiated diamond
material, or the irradiated diamond material after a further post-irradiation
treatment, has (i) an absorption coefficient measured at 77 K of at least
0.01 cm-1 at a wavelength of 741 nm; or (ii) an absorption coefficient measured
at 77 K of at least 0.01 cm-1 at a wavelength of 394 nm.
14. A method according to any preceding claim, wherein the provided CVD
diamond material in step (i) has a boron concentration [B] of less than 5x1015
atoms/cm3
.
15. A method according to any of claims 1-13, wherein uncompensated boron is
present in the provided diamond material in a concentration of >5x1015 cm-3
,
and the irradiation step introduces sufficient isolated vacancies into the
diamond material so that the excess product of isolated vacancy concentration
x path length, after isolated vacancies have been used to compensate the
boron, after irradiation, or after a further post-irradiation treatment, is at least
0.072 ppm em and at most 0.36 ppm em.
16. A method according to any preceding claim, wherein at least 50 % of the
provided CVD diamond has been formed from a single growth sector.
-40-
17. A method according to any preceding claim, wherein the irradiation dose is 1 x
1017 -1 x 1018 e- cm-2 for a 0.5 ct Round Brilliant Cut diamond stone.
18. A method according to any preceding claim wherein the provided diamond
material shows a measurable difference in at least one of its absorption
characteristics in first and second states, the first state being after exposure to
irradiation having an energy of at least 5.5 eV and the second state being after
thermal treatment at 798 K (525°C), and wherein post irradiation the change in
colour saturation value C* between the diamond material in the first and second
states is reduced by at least 0.5.
19. A method according to any preceding claim wherein post irradiation, the
change in C* of the diamond material in first and second states is less than 1,
the first state being after exposure to irradiation having an energy of at least 5.5
eV and the second state being after thermal treatment at 798 K (525°C).
20. A method according to any preceding claim, comprising selecting the [Ns~
concentration of the provided diamond material so as to provide a target v-fVJ
ratio in the provided diamond material.
21. A CVD diamond material when made by a method according to any preceding
claim.
22. A fancy pale blue or fancy pale blue/green CVD synthetic single crystal
diamond having a boron concentration [B] of <5 x 1015 atoms/cm3 and the
following colour characteristics:
Characteristic Range
Hue angle a 100°-270°
Saturation C* At least 2 and at most 10
Lightness L * >65
23. A fancy pale blue or fancy pale blue/green CVD synthetic single crystal
diamond material according to claim 20 or 21, having a product of total isolated
vacancy concentration x path length, [Vr] x L of at least 0.072 ppm em and at
most 0.36 ppm em.
-41-
24. Diamond material according to any of claims 21-23, having (i) an absorption
coefficient measured at 77 K of at least 0.01 cm·1 at a wavelength of 741 nm;
and (ii) an absorption coefficient measured at 77 K of at least 0.01 cm·1 at a
wavelength of 394 nm.
25. Diamond material according to any of claims 21-24, which is a gemstone.
26. Use of a CVD diamond material according to any of claims 21-25, as a
gemstone.
27. A system for being able to select and make a desired colour of diamond
material within the fancy blue to blue/green colour range, having a hue angle
within the range 100°-270°;the system comprising the steps of:
(a) predetermining a target [Ns~ concentration for a grown CVD diamond
material, that after irradiation of that grown CVD diamond material will result in
the said desired colour;
(b) growing diamond material by a CVD process that includes introducing
sufficient nitrogen in a process gas in the CVD process so as to achieve the
said target [Ns~ concentration in the grown CVD diamond material, which CVD
diamond material has the properties of the provided diamond material set out in
step (i) of method claim 1; then
(c) carrying out the irradiation step set out in step (ii) of method claim 1 on the
grown CVD diamond material.
Dated this 'a~day of December 2011
~·
o!and and Anand Advocates
Agents for the Applicant