WE CLAIM:
[Claim 1]
A method for manufacturing a field-effect transistor, the method comprising the steps of: forming a gate electrode on a surface of a substrate; forming a gate insulating layer on the gate electrode; forming a conductive film containing a conductor and a photosensitive organic component by a coating method on the gate insulating layer; exposing the conductive film from a rear surface side of the substrate with the gate electrode as a mask; developing the exposed conductive film to form a source electrode and a drain electrode; and forming a semiconductor layer by a coating method between the source electrode and the drain electrode.
[Claim 2]
A method for manufacturing a field-effect transistor, the method comprising the steps of: forming a source electrode and a drain electrode on a surface of a substrate; forming a semiconductor layer by a coating method between the source electrode and the drain electrode; forming a gate insulating layer on the source electrode, the drain electrode, and the semiconductor layer; forming a conductive film containing a conductor and

a photosensitive organic component by a coating method on the gate insulating layer; exposing the conductive film from a rear surface side of the substrate with the source electrode and the drain electrode as a mask; and developing the exposed conductive film to form a gate electrode. [Claim 3]
The method for manufacturing a field-effect transistor according to claim 1, wherein the gate electrode is formed by a coating method. [Claim 4]
The method for manufacturing a field-effect transistor according to claim 2, wherein the source electrode and the drain electrode are formed by a coating method. [Claim 5]
The method for manufacturing a field-effect transistor according to any of claims 1 to 4, wherein the semiconductor layer comprises a carbon nanotube. [Claim 6]
The method for manufacturing a field-effect transistor according to any of claims 1 to 5, wherein in the step of exposing the conductive film from the rear surface side of the substrate, the exposure light has any

wavelength of 436 nm, 405 nm, or 365 nm, and an intensity I0 of the exposure light and an intensity I of light passing through the substrate, and the electrode and the gate insulating layer formed on the substrate surface satisfy the following formula (a):
-Log10(I/I0) ^ 2 (a) [Claim 7]
The method for manufacturing a field-effect transistor according to any of claims 1 to 6, wherein the substrate is 200 um or less in thickness. [Claim 8]
The method for manufacturing a field-effect transistor according to any of claims 1 to 7, wherein the gate insulating layer is 1 um or less in film thickness. [Claim 9]
The method for manufacturing a field-effect transistor according to any of claims 1 to 8, the method further comprising a step of exposing the conductive film from a surface side of the substrate after the step of exposing the conductive film from the rear surface side of the substrate. [Claim 10]
The method for manufacturing a field-effect

transistor according to claims 1 to 9, wherein the photosensitive organic component comprises a compound having an urethane group. [Claim 11]
The method for manufacturing a field-effect transistor according to any of claims 1 to 10, wherein the semiconductor layer comprises a carbon nanotube composite with a conjugated polymer attached to at least a part of a surface of the carbon nanotube. [Claim 12]
The method for manufacturing a field-effect transistor according to any of claims 1 to 11, wherein the coating method for forming the semiconductor layer is any one selected from the group consisting of an ink-jet method, a dispenser method, and a spray method. [Claim 13]
The method for manufacturing a field-effect transistor according to any of claims 1 to 12, wherein the gate insulating layer comprises at least a polysiloxane containing a silane compound represented by the general formula (1) as a polymerized component. R1mSi(OR2)4-m (1)
where R1 represents a hydrogen atom, an alkyl group,

a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group, and in a case in which there is more than one R1, each R1 may be identical or different. R2 represents an alkyl group or a cycloalkyl group, and in a case in which there is more than one R2, each R2 may be identical or different. m represents an integer of 1 to 3. [Claim 14]
The method for manufacturing a field-effect transistor according to claim 13, wherein the polysiloxane further comprises a silane compound represented by the general formula (3) as a polymerized component. A1R6kSi(OR7)2-k (3)
In the general formula (3), R6 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group. R7 represents a hydrogen atom, an alkyl group, an acyl group, or an aryl group. k represents 0 or 1. A1 represents an organic group containing at least two carboxyl groups, sulfo groups, thiol groups, phenolic hydroxyl groups, or derivatives thereof. However, in a case in which the derivative is a cyclic condensed structure from two of the carboxyl group, the sulfo group,

the thiol group, and the phenolic hydroxyl group, A1 represents an organic group having at least one of the cyclic condensed structures. [Claim 15]
A method for manufacturing a wireless communication device, the method comprising the steps of: forming a field-effect transistor by the manufacturing method according to any of claims 1 to 14; and forming an antenna pattern on the surface of the substrate.