l/5#
SP263815WO00
Description
Title of Invention
METHOD FOR PRODUCING ORGANIC TRANSISTOR, ORGANIC
5 TRANSISTOR, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE,
SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
Technical Field
[0001]
10 The present disclosure relates to a method for producing an organic
transistor, an organic transistor, a method for producing a semiconductor device, a
semiconductor device, and an electronic apparatus. More specifically, the present
disclosure relates to a method for producing an organic transistor using a
dioxaanthanthrene-based compound, an organic transistor, a method for producing a
15 semiconductor device, a semiconductor device, and an electronic apparatus using the
organic transistor or the semiconductor device.
Background Art
[0002]
20 In the related art, as an active layer (a semiconductor film) in a
semiconductor device such as a field effect transistor, an inorganic-based
semiconductor material represented by silicon is used.
[0003]
However, the semiconductor device using the semiconductor film formed of
25 the inorganic-based semiconductor material such as silicon has disadvantages as
follows. Firstly, since a vacuum process, a high-temperature heat treatment, or the
like is necessary, a large amount of energy is consumed. Secondly, since a hightemperature
heat treatment is necessary, a type of substrate to be used is limited.
Thirdly, investment in an expensive facility for fabrication is necessary. Fourthly,
30 since the inorganic-based semiconductor material is hard and brittle, durability for
bending or tensile stress is low.
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[0004]
In recent years, a semiconductor device including a semiconductor film
formed of an organic semiconductor material has received attention. The
semiconductor device has advantages as follows, as compared with a semiconductor
5 device using a semiconductor film formed of an inorganic-based semiconductor
material. Firstly, the semiconductor film can be formed at a low temperature.
Secondly, since the organic semiconductor material is soluble in a solvent, the
semiconductor film can be formed by coating. Thirdly, since the organic
semiconductor material is soluble in a solvent, the semiconductor film can be formed
10 by a printing method. Fourthly, since the semiconductor film can be easily formed
by a coating or printing method, it has advantageous in terms of an increase in an
area of the semiconductor film. Fifthly, since the semiconductor film can be formed
at a low temperature, the semiconductor film can be formed on a flexible substrate
which has low heat resistance, but is flexible, which is formed of a plastic, or the like,
15 and thus a flexible semiconductor device can be fabricated. Sixthly, since
characteristics of the semiconductor film can be controlled through substituent
control of the organic semiconductor material, multiple functions and high
performance of a semiconductor device can be attempted. Seventhly, low costs of a
semiconductor device can be attempted.
20 [0005]
Until now, as the organic semiconductor material suitable for coating or
printing, pentacene derivatives, poly(alkyl thiophene)s, and the like have been used,
and development in fabrication of a field effect transistor by a wet process using the
organic semiconductor materials has been conducted. However, carrier mobility of
25 the field effect transistor is equal to or less than 0.1 cn^V'V1, and is smaller than 1
c m W , which is mobility of a field effect transistor (a thin film transistor) using
amorphous silicon of the related art.
[0006]
Further, as compared with an inorganic semiconductor material, the organic
30 semiconductor material has a problem related to carrier injection. That is, in
general, it is said that in organic molecules, a molecule having a shallow HOMO
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(highest occupied molecular orbital) is unstable. In fact, in polyacene compounds,
it is said that since anthracene having a short ring length has a deeper HOMO than
pentacene having a long ring length, anthracene is stable. However, in a stable
organic molecule having a deep HOMO, when a general metal is used as an electrode
5 material, since a large energy difference between an HOMO of the organic molecule
and a work function of the metal is occurred, effective carrier injection is expected to
be inhibited by a Schottky barrier.
[0007]
Further, the organic semiconductor material is unstable in the atmosphere or
10 at a high temperature, as compared with the inorganic semiconductor material.
That is, as described above, an organic molecule, which is capable of satisfactory
performing carrier injection on an electrode, has a shallow HOMO, but the organic
molecule is likely to be unstable in the atmosphere or at a high temperature. Further,
it is known that the organic semiconductor material is decomposed through a
15 reaction of its own material to oxygen. Based these reasons, it is known that
characteristics of the semiconductor device using the semiconductor film formed of
the organic semiconductor material are deteriorated.
[0008]
Further, in a semiconductor device using a semiconductor film formed by
20 spin-coating a solution in which an organic semiconductor material is dissolved in a
solvent, it is difficult to secure characteristic uniformity in the plane. This is
regarded to be caused by coating unevenness when the solution containing the
organic semiconductor material is spin-coated.
[0009]
25 In recent years, to solve the problems of the semiconductor device using the
semiconductor film formed of the organic semiconductor material, by the inventors,
it is suggested using a dioxaanthanthrene-based compound, such as 6,12-
dioxaanthanthrene (also known as peri xanthenoxanthene, 6,12-dioxaanthanthrene
(may be abbreviated as "PXX")) as the organic semiconductor material (see Non-
30 Patent Literature 1 and Patent Literature 1). When the dioxaanthanthrene-based
compound is used, the above-described problems caused in the case in which the
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semiconductor film formed of the organic semiconductor material is used can be
solved. For example, PXX is stable in the atmosphere and has excellent heat
resistance (see Non-Patent Literature 1).
5 Citation List
Patent Literature
[0010]
Patent Literature 1: JP 2010-006794A
Non-Patent Literature
10 [0011]
Non-Patent Literature 1: N. Kobayashi, M. Sasaki and K. Nomoto: Chem. Mater.
21 (2009) 552
Summary of Invention
15 Technical Problem
[0012]
However, when the organic semiconductor film is formed using the abovedescribed
dioxaanthanthrene-based compound, since the organic semiconductor film
is formed on a gate insulating film after the gate insulating film is formed, or a gate
20 insulating film is formed on the organic semiconductor film after the organic
semiconductor film using the dioxaanthanthrene-based compound is formed, it is
difficult to form a satisfactory interface between the organic semiconductor film and
the gate insulating film. Therefore, it is difficult to obtain sufficiently high carrier
mobility in the organic transistor.
25 [0013]
Therefore, it is desirable to provide an organic transistor and a method for
producing the same capable of obtaining sufficiently high carrier mobility.
[0014]
Further, it is desirable to provide a semiconductor device, such as an organic
30 transistor, and a method for producing the same capable of obtaining sufficiently
high carrier mobility.
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[0015]
Further, it is desirable to provide an electronic apparatus using the excellent
organic transistor or semiconductor device.
[0016]
5 The object and the other objects may be apparent from the following
description of the specification.
Solution to Problem
[0017]
10 According to an embodiment of the present disclosure, there is provided a
method of producing an organic transistor, the method including collectively forming
a gate insulating film and an organic semiconductor film by applying, onto a gate
electrode disposed on a base substrate, a solution including a polymer and at least
one compound of a compound represented by General Formula 1, a compound
15 represented by General Formula 2, a compound represented by General Formula 3, a
compound represented by General Formula 4, a compound having a structure
represented by General Formula 4, in which R is a substituent other than an alkyl
group, a compound represented by General Formula 5, a compound represented by
General Formula 6, a compound having a structure represented by General Formula
20 5 or 6, in which R is a substituent other than an alkyl group, and a compound
represented by General Formula 7, the gate insulating film containing the polymer,
the organic semiconductor film being formed on the gate insulating film and
containing the at least one compound, and forming a source electrode and a drain
electrode on the organic semiconductor film.
25 [0018]
[Chem. 1]
(1)
(where R is a linear or branched alkyl group)
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[Chem. 2]
(where R is a linear or branched alkyl group)
[Chem. 3]
(where R is a linear or branched alkyl group)
[Chem. 4]
(2)
(3)
10
(4)
(where R is an alkyl group, and a number of R's is 2 to 5)
[Chem. 5]
(5)
(where R is an alkyl group, and a number of R's is 1 to 5)
[Chem. 6]
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(6)
(where R is an alkyl group, and a number of R's is 1 to 5)
[Chem. 7]
(7)
(where Al and A2 are represented by Formula 8)
[Chem. 8]
?/)(s (8)
(where R is an alkyl group or another substituent, and a number of R's is 1
to 5)
10 [0019]
Further, according to an embodiment of the present disclosure, there is
provided an organic transistor including a gate insulating film and an organic
semiconductor film collectively formed by applying, onto a gate electrode disposed
on a base substrate, a solution including a polymer and at least one compound of a
15 compound represented by General Formula 1, a compound represented by General
Formula 2, a compound represented by General Formula 3, a compound represented
by General Formula 4, a compound having a structure represented by General
Formula 4, in which R is a substituent other than an alkyl group, a compound
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represented by General Formula 5, a compound represented by General Formula 6, a
compound having a structure represented by General Formula 5 or 6, in which R is a
substituent other than an alkyl group, and a compound represented by General
Formula 7, the gate insulating film containing the polymer, the organic
5 semiconductor film being formed on the gate insulating film and containing the at
least one compound, and a source electrode and a drain electrode disposed on the
organic semiconductor film.
[0020]
Further, according to an embodiment of the present disclosure, there is
10 provided an electronic apparatus including an organic transistor which includes a
gate insulating film and an organic semiconductor film collectively formed by
applying, onto a gate electrode disposed on a base substrate, a solution including a
polymer and at least one compound of a compound represented by General Formula
1, a compound represented by General Formula 2, a compound represented by
15 General Formula 3, a compound represented by General Formula 4, a compound
having a structure represented by General Formula 4, in which R is a substituent
other than an alkyl group, a compound represented by General Formula 5, a
compound represented by General Formula 6, a compound having a structure
represented by General Formula 5 or 6, in which R is a substituent other than an
20 alkyl group, and a compound represented by General Formula 7, the gate insulating
film containing the polymer, the organic semiconductor film being formed on the
gate insulating film and containing the at least one compound, and a source electrode
and a drain electrode disposed on the organic semiconductor film.
[0021]
25 Further, according to an embodiment of the present disclosure, there is
provided a method of producing a semiconductor device, the method including
collectively forming an insulating film and an organic semiconductor film by
applying, onto a base substrate, a solution including a polymer and at least one
compound of a compound represented by General Formula 1, a compound
30 represented by General Formula 2, a compound represented by General Formula 3, a
compound represented by General Formula 4, a compound having a structure
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represented by General Formula 4, in which R is a substituent other than an alkyl
group, a compound represented by General Formula 5, a compound represented by
General Formula 6, a compound having a structure represented by General Formula
5 or 6, in which R is a substituent other than an alkyl group, and a compound
5 represented by General Formula 7, the insulating film containing the polymer, and
the organic semiconductor film formed on the insulating film and containing the at
least one compound.
[0022]
Further, according to an embodiment of the present disclosure, there is
10 provided a semiconductor device including an insulating film and an organic
semiconductor film collectively formed by applying, onto a base substrate, a solution
including a polymer and at least one compound of a compound represented by
General Formula 1, a compound represented by General Formula 2, a compound
represented by General Formula 3, a compound represented by General Formula 4, a
15 compound having a structure represented by General Formula 4, in which R is a
substituent other than an alkyl group, a compound represented by General Formula 5,
a compound represented by General Formula 6, a compound having a structure
represented by General Formula 5 or 6, in which R is a substituent other than an
alkyl group, and a compound represented by General Formula 7, the insulating film
20 containing the polymer, the organic semiconductor film being formed on the
insulating film and containing the at least one compound.
[0023]
Further, according to an embodiment of the present disclosure, there is
provided an electronic apparatus including a semiconductor device which includes an
25 insulating film and an organic semiconductor film collectively formed by applying,
onto a base substrate, a solution including a polymer and at least one compound of a
compound represented by General Formula 1, a compound represented by General
Formula 2, a compound represented by General Formula 3, a compound represented
by General Formula 4, a compound having a structure represented by General
30 Formula 4, in which R is a substituent other than an alkyl .grpup, a compound
represented by General Formula 5, a compound represented by General Formula 6, a
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compound having a structure represented by General Formula 5 or 6, in which R is a
substituent other than an alkyl group, and a compound represented by General
Formula 7, the insulating film containing the polymer, the organic semiconductor
film formed on the insulating film and containing the at least one compound.
[0024]
It is preferable, but not limited to, that the at least one compound is one
compound represented by the following Formulas 9 to 17.
[0025]
[Chem. 9]
10
(9)
[Chem. 10]
(10)
[Chem. 11]
(11)
15 [Chem. 12]
(12)
[Chem. 13]
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[Chem. 14]
[Chem. 15]
[Chem. 16]
[Chem. 17]
(13)
(14)
(15)
(16)
(17)
10 [0026]
When applying, onto a gate electrode disposed on a base substrate or the
base substrate, a solution including a polymer and an organic semiconductor film
including at least one compound among a compound represented by General
Formula 1, a compound represented by General Formula 2, a compound represented
15 by General formula 3, a compound represented by General Formula 4, a compound
having a structure represented by General Formula 4, in which R is a substituent
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other than an alkyl group, a compound represented by General Formula 5, a
compound represented by General Formula 6, a compound having a structure
represented by General Formula 5 or 6, in which R is a substituent other than an
alkyl group, and a compound represented by General Formula 7, spontaneous phase-
5 separation is in a process of drying the solution, and a gate insulating film or
insulating film containing the polymer, and an organic semiconductor film
continuously formed with the gate insulating film or insulating film on the gate
insulating film or insulating film and containing the at least one compound are
obtained. The gate insulating film and the organic semiconductor film may be
10 formed by forming an organic insulating film containing a portion of the gate
insulating film on the gate electrode and applying the solution onto the organic
insulating film
[0027]
In the organic transistor and the semiconductor device, as the polymer, an
15 insulating polymer capable of forming an insulating film may be used, preferably, at
least one of poly(a-methylstyrene) and a cycloolefin copolymer may be used, but the
polymer is not limited thereto.
[0028]
As a solvent of the solution, conventionally known solvents may be used,
20 and the solvent is selected as needed. However, a specific example of the solvent is
at least one among xylene, p-xylene, mesitylene, toluene, tetralin, anisole, benzene,
1,2-dichlorobenzene, o-dichlorobenzene, cyclohexane, and ethyl cyclohexane. A
dry condition (temperature, time, and the like) of the solution is appropriately
selected according to the used solvent.
25 [0029]
As long as the semiconductor device has a structure in which an organic
semiconductor film and an insulating film are disposed to be in contact with each
other, the semiconductor device may have basically all structures. The
semiconductor device includes the organic transistor having a structure in which an
30 organic semiconductor film and a gate insulating film are disposed to be in contact
with each other, but for example, the semiconductor device may include a capacitor
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having a structure in which an insulating film is interposed between an organic
semiconductor film and another conductive film (for example, an organic
semiconductor film, a metal film, or the like).
[0030]
5 The electronic apparatus may be a variety of electronic apparatuses using an
organic transistor or a semiconductor device, and may include both a portable
electronic apparatus and a stationary electronic apparatus, and a function or use
thereof is not used. For example, specific examples of the electronic apparatus may
include a display such as a liquid crystal display or an organic electroluminescence
10 display, a portable phone, a mobile apparatus, a personal computer, a game machine,
car equipment, a household electrical appliance, an industrial product, and the like.
[0031]
In the present disclosure described above, as a gate insulating film and
insulating film containing the polymer, and an organic semiconductor film
15 continuously formed with the gate insulating film or insulating film on the gate
insulating film or insulating film and containing the at least one compound are
obtained by applying a solution including a polymer and at least one compound
among a compound represented by General Formula 1, a compound represented by
General Formula 2, a compound represented by General Formula 3, a compound
20 represented by General Formula 4, a compound having a structure represented by
General Formula 4, in which R is a substituent other than an alkyl group, a
compound represented by General Formula 5, a compound represented by General
Formula 6, a compound having a structure represented by General Formula 5 or 6, in
which R is a substituent other than an alkyl group, and a compound represented by
25 General Formula 7, a satisfactory interface between an organic semiconductor film
and a gate insulating film or a satisfactory interface between the organic
semiconductor film and an insulating film can be simply obtained.
Advantageous Effects of Invention
30 [0032]
According to the present disclosure, as a satisfactory interface between an
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organic semiconductor film and a gate insulating film can be obtained, an organic
transistor in which carrier scattering in the interface between the organic
semiconductor film and the gate insulating film does not occur and which has
sufficiently high carrier mobility can be obtained. Further, as the satisfactory
5 interface between the organic semiconductor film and the gate insulating film can be
obtained, a semiconductor device such as an organic transistor having sufficiently
high carrier mobility or a capacitor having satisfactory characteristics can be
obtained. In addition, various advantages can be obtained by using an organic
semiconductor film including at least one compound among a compound represented
10 by General Formula 1, a compound represented by General Formula 2, a compound
represented by General Formula 3, a compound represented by General Formula 4, a
compound having a structure represented by General Formula 4, in which R is a
substituent other than an alkyl group, a compound represented by General Formula 5,
a compound represented by General Formula 6, a compound having a structure
15 represented by General Formula 5 or 6, in which R is a substituent other than an
alkyl group, and a compound represented by General Formula 7. In addition, a
high-performance electronic apparatus can be realized by using the excellent organic
transistor or semiconductor device.
20 Brief Description of Drawings
[0033]
[FIG. 1] FIG 1 is a cross-sectional view illustrating an organic transistor according to
a first embodiment.
[FIG 2A] FIG 2A is a cross-sectional view illustrating a method for producing the
25 organic transistor according to the first embodiment.
[FIG 2B] FIG 2B is a cross-sectional view illustrating a method for producing the
organic transistor according to the first embodiment.
[FIG 3] FIG 3 is a figure-substitute photograph illustrating a cross-sectional
transmission electron microscope photograph of an example of a laminated structure
30 of an organic semiconductor film and the insulating polymer film formed by phaseseparation
from a raw material solution.
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[FIG 4] FIG 4 is a cross-sectional view illustrating a capacitor according to a second
embodiment.
[FIG 5A] FIG 5A is a cross-sectional view illustrating a method producing the
capacitor according to the second embodiment.
5 [FIG 5B] FIG. 5B is a cross-sectional view illustrating a method for producing the
capacitor according to the second embodiment.
Description of Embodiments
[0034]
10 Hereinafter, modes for carrying out the present invention (hereinafter
referred to as "embodiments") will be described. The description will be made in
the following order.
1. First embodiment (organic transistor and method for producing the same)
2. Second embodiment (capacitor and method for producing the same)
15 [0035]
<1. First embodiment
[Organic transistor]
FIG 1 illustrates an organic transistor according to a first embodiment.
[0036]
20 As illustrated in FIG. 1, in an organic transistor, a gate electrode 12 is
disposed on a substrate 11. A gate insulating film 13 is disposed to cover the gate
electrode 12. The gate insulating film 13 has a double-layered structure of an
insulating film 13a and an insulating film 13b formed thereon. An organic
semiconductor film 14 which is a channel region is disposed on the gate insulating
25 film 13. A source electrode 15 and a drain electrode 16 are disposed on the organic
semiconductor film 14. A top-contact bottom-gate organic transistor having a
configuration of an insulated gate field effect transistor is constituted by the gate
electrode 12, the organic semiconductor film 14, the source electrode 15, and the
drain electrode 16.
30 [0037]
The organic semiconductor film 14 includes at least one compound among a
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compound represented by General Formula 1, a compound represented by General
Formula 2, a compound represented by General Formula 3, a compound represented
by General Formula 4, a compound having a structure represented by General
Formula 4, in which R is a substituent other than an alkyl group, a compound
5 represented by General Formula 5, a compound represented by General Formula 6, a
compound having a structure represented by General Formula 5 or 6, in which R is a
substituent other than an alkyl group, and a compound represented by General
Formula 7, preferably, a compound of any one represented by Formulas 9 to 17. A
lower-layered insulating film 13a of the gate insulating film 13 includes, for example,
10 an organic insulator such as PVP-RSiCl3, DAP, or isoDAP. Further, an upperlayered
insulating film 13b of the gate insulating film 13 is selected, for example,
from among previously mentioned polymers as necessary. As the polymer,
preferably, at least one of poly(a-methylstyrene) and a cycloolefin copolymer may be
used. As the cycloolefin copolymer, TOPAS (registered trademark) (manufactured
15 by TOPAS ADVANCED POLYMERS GmbH) represented by the following
structural formula may be used.
[Chem. 18]
-f-CHa-CH*-^
^
(18)
In this case, the organic semiconductor film 14 and the upper-layered insulating film
20 13b of the gate insulating film 13 are continuously formed in a thickness direction
thereof. Thicknesses of the gate insulating film 13 and the organic semiconductor
film 14 are appropriately selected according to characteristics necessary for the
organic transistor.
[0038]
25 A material of the substrate 11 is selected from among conventionally known
materials as necessary, and may be a transparent material or a material opaque to
visible light. Further, the substrate 11 may be conductive or non-conductive. The
substrate 11 may be flexible or non-flexible. Specifically, examples of the material
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of the substrate 11 may include a variety of plastics (organic polymers) such as
polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyvinyl phenol
(PVP), polyether sulfone (PES), polyimide, polycarbonate, polyethylene
terephthalate (PET), or polyethylene naphthalate (PEN), mica, a variety of glass
5 substrates, a quartz substrate, a silicon substrate, a variety of alloys such as stainless
steel, and a variety of metals. By using plastic as the material of the substrate 11,
the substrate 11 may be made to be flexible, and thus, a flexible organic transistor
may be obtained.
[0039]
10 Examples of a material containing the gate electrode 12, the source
electrode 15, and the drain electrode 16 may include a metal such as platinum (Pt),
gold (Au), palladium (Pd), chromium (Cr), molybdenum (Mo), nickel (Ni),
aluminum (Al), silver (Ag), tantalum (Ta), tungsten (W), copper (Cu), titanium (Ti),
indium (In), or tin (Sn), or a variety of conductive materials such as alloys containing
15 the metal elements, conductive particles formed of the metals, conductive particles
formed of the alloys containing the metals, and polysilicon containing impurities.
Examples of the material containing the gate electrode 12, the source electrode 15,
and the drain electrode 16 may include organic materials (conductive polymers) such
as poly(3,4-ethylenedioxythiophene)/polystyrene sulfonic acid (PEDOT/PSS). The
20 gate electrode 12, the source electrode 15, and the drain electrode 16 may have a
laminated structure of two or more kinds of layers made of the. A width (a gate
length) of the gate electrode 12 in a length direction of a channel or a distance (a
channel length) between the source electrode 15 and the drain electrode 16 is
appropriately selected according to characteristics and the like necessary for the
25 organic transistor.
[0040]
[Method for Producing Organic Transistor]
FIGS. 2A and 2B illustrate a method for producing the organic transistor.
As illustrated in FIG 2A, first, by a conventionally known method, a gate
30 electrode 12 is formed on a substrate 11, and an insulating film 13a is thereon.
[0041]
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On the other hand, a raw material solution containing at least one compound
among a compound represented by General Formula 1, a compound represented by
General Formula 2, a compound represented by General Formula 3, a compound
represented by General Formula 4, a compound having a structure represented by
5 General Formula 4, in which R is a substituent other than an alkyl group, a
compound represented by General Formula 5, a compound represented by General
Formula 6, a compound having a.sjructure represented by General Formula 5 or 6, in
which R is a substituent other than an alkyl group, and a compound represented by
General Formula 7, preferably, a compound of any one represented by Formulas 9 to
10 17, and the previously mentioned insulating polymer is prepared. A solvent of the
raw material solution is appropriately selected from among the previously mentioned
solvents. Further, a mixing ratio (a mass ratio or a weight ratio) of the compound
and the insulating polymer in the raw material solution is selected as necessary.
[0042]
15 Next, as illustrated in FIG 2B, the raw material solution 17 prepared in this
way is coated or printed on the insulating film 13a in a film shape. Examples of the
coating method of the raw material solution 17 may include a spin coat method and
the like. Examples of the printing method of a raw material solution 18 may
include a screen printing method, an inkjet printing method, an offset printing
20 method, a reverse offset printing method, a gravure printing method, a microcontact
method, and the like. Examples of a coating or printing method of the raw material
solution 17 may include a variety of coating methods such as an air doctor coater
method, a blade coater method, a rod coater method, a knife coater method, a
squeeze coater method, a reverse roll coater method, a transfer roll coater method, a
25 gravure coater method, a kiss coater method, a cast coater method, a spray coater
method, a slit orifice coater method, a calendar coater method, and a dipping method.
[0043]
Next, the film-shaped raw material solution 17 is dried. In a process of the
drying, the at least one compound among the compound represented by General
30 Formula 1, the compound represented by General Formula 2, the compound
represented by General Formula 3, the compound represented by General Formula 4,
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the compound having a structure represented by General Formula 4, wherein R is a
substituent other than an alkyl group, a compound represented by General Formula 5,
the compound represented by General Formula 6, the compound having a structure
represented by General Formula 5 or 6, wherein R is a substituent other than an alkyl
5 group, and the compound represented by General Formula 7, and the insulating
polymer contained in the raw material solution 17 are spontaneously phase-separated
into layer shapes. As a result, after the drying, as illustrated in FIG 2B, an
insulating film 13b formed of the insulating polymer and an organic semiconductor
film 14 formed thereon and formed of the compound are continuously formed in a
10 thickness direction.
[0044]
Next, as necessary, the organic semiconductor film 14 formed in this way is
patterned in a predetermined shape by etching or the like, and then a source electrode
16 and a drain electrode 17 are formed on the organic semiconductor film 14 by a
15 conventionally known method.
Therefore, the desired top-contact bottom-gate organic transistor is
produced.
[0045]

20 A raw material solution was prepared by uniformly dissolving a compound
(abbreviated as C2Ph-PXX) represented by Formula 9 and poly(a-methylstyrene)
(abbreviated as p-aMS), which is an insulating polymer, in mesitylene.
[0046]
The raw material solution prepared in this way was coated on a substrate in
25 which a gate electrode is formed by a spin coat method. As the substrate, a glass
substrate of which a surface is covered with an organic insulating film containing
cross-linked polyvinyl phenol (PVP) as a main component was used.
[0047]
Next, the coating film formed in this way was dried in a nitrogen
30 atmosphere at 60 °C for 1 hour. Accordingly, spontaneous phase-separation was
caused in the coating film, and a laminated structure of a gate insulating film formed
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of poly(a-methylstyrene) and an organic semiconductor film formed of C2Ph-PXX
formed thereon was formed. FIG 3 illustrates a cross-sectional transmission
electron microscope photograph of a sample. As can be seen from FIG 3, the gate
insulating film formed of poly (a-methylstyrene) and having a thickness of about 15
5 nm and the organic semiconductor film formed of C2Ph-PXX and having a thickness
of about 10 nm formed thereon form a distinct interface and are continuously formed.
[0048]
Thereafter, a source electrode and a drain formed of gold (Au) were formed
on the organic semiconductor film formed of C2Ph-PXX with a chromium (Cr) film
10 interposed as an adhesion layer therebetween. In this way, a bottom gate organic
transistor was produced.
[0049]
< Example 2>
A raw material solution was prepared by uniformly dissolving a compound
15 (abbreviated as C3Ph-PXX) represented by Formula 10 and poly(a-methylstyrene)
(p-aMS), which is an insulating polymer, in mesitylene.
[0050]
The raw material solution prepared in this way was coated on a substrate by
a spin coat method. The same substrate as in Example 1 was used as the substrate.
20 [0051]
Next, the coating film formed in this way was dried in a nitrogen
atmosphere at 60 °C for 1 hour. Accordingly, spontaneous phase-separation was
caused in the coating film, and a laminated structure of a gate insulating film formed
of poly(a-methylstyrene) and an organic semiconductor film formed of C3Ph-PXX
25 formed thereon was formed.
[0052]
Thereafter, in the same manner as in Example 1, a bottom gate organic
transistor was produced.
[0053]
30 < Example 3>
A raw material solution was prepared by uniformly dissolving a compound
21/50
SP263815WO00
(abbreviated as C4Ph-PXX) represented by Formula 11 and poly(a-methylstyrene)
(p-aMS), which is an insulating polymer, in mesitylene.
[0054]
The raw material solution prepared in this way was coated on a substrate by
5 a spin coat method. The same substrate as Example 1 was used as the substrate.
[0055]
Next, the coating film formed in this way was dried in a nitrogen
atmosphere at 60 °C for 1 hour. Accordingly, spontaneous phase-separation was
caused in the coating film, and a laminated structure of a gate insulating film formed
10 of poly(a-methylstyrene) and an organic semiconductor film formed of C4Ph-PXX
formed thereon was formed.
[0056]
Thereafter, in the same manner as in Example 1, a bottom gate organic
transistor was produced.
15 [0057]
< Example 4>
A raw material solution was prepared by uniformly dissolving a compound
(abbreviated as C5Ph-PXX) represented by Formula 12 and poly(a-methylstyrene)
(p-aMS), which is an insulating polymer, in mesitylene.
20 [0058]
The raw material solution prepared in this way was coated on a substrate by
a spin coat method. The same substrate as Example 1 was used as the substrate.
[0059]
Next, the coating film formed in this way was dried in a nitrogen
25 atmosphere at 60 °C for 1 hour. Accordingly, spontaneous phase-separation was
caused in the coating film, and a laminated structure of a gate insulating film formed
of poly(a-methylstyrene) and an organic semiconductor film formed of C5Ph-PXX
formed thereon was formed.
[0060]
30 Thereafter, in the same manner as in Example 1, a bottom gate organic
transistor was produced.
SP263815WO00
22/50
[0061]
< Example 5>
A raw material solution was prepared by uniformly dissolving a compound
(abbreviated as C6Ph-PXX) represented by Formula 13 and poly(a-methylstyrene)
5 (p-aMS), which is an insulating polymer, in mesitylene.
[0062]
The raw material solution prepared in this way was coated on a substrate by
a spin coat method. The same substrate as Example 1 was used as the substrate.
[0063]
10 Next, the coating film formed in this way was dried in a nitrogen
atmosphere at 60 °C for 1 hour. Accordingly, spontaneous phase-separation was
caused in the coating film, and a laminated structure of a gate insulating film formed
of poly(a-methylstyrene) and an organic semiconductor film formed of C6Ph-PXX
formed thereon was formed.
15 [0064]
Thereafter, in the same manner as in Example 1, a bottom gate organic
transistor was produced.
[0065]
< Example 6>
20 A raw material solution was prepared by uniformly dissolving a compound
(abbreviated as C9Ph-PXX) represented by Formula 14 and poly(a-methylstyrene)
(p-aMS), which is an insulating polymer, in mesitylene.
[0066]
The raw material solution prepared in this way was coated on a substrate by
25 a spin coat method. The same substrate as Example 1 was used as the substrate.
[0067]
Next, the coating film formed in this way was dried in a nitrogen
atmosphere at 60 °C for 1 hour. Accordingly, spontaneous phase-separation was
caused in the coating film, and a laminated structure of a gate insulating film formed
30 of poly(a-methylstyrene) and an organic semiconductor film formed of C9Ph-PXX
formed thereon was formed.
SP263815WO00
23/50
[0068]
< Example 7>
A raw material solution was prepared by uniformly dissolving a compound
(abbreviated as iC4Ph-PXX) represented by Formula 15 and poly(a-methylstyrene)
5 (p-aMS), which is an insulating polymer, in mesitylene.
[0069]
The raw material solution prepared in this way was coated on a substrate by
a spin coat method. The same substrate as Example 1 was used as the substrate.
[0070]
10 Next, the coating film formed in this way was dried in a nitrogen
atmosphere at 60 °C for 1 hour. Accordingly, spontaneous phase-separation was
caused in the coating film, and a laminated structure of a gate insulating film formed
of poly(a-methylstyrene) and an organic semiconductor film formed of iC4Ph-PXX
formed thereon was formed.
15 [0071]
< Example 8>
A raw material solution was prepared by uniformly dissolving a compound
(abbreviated as iC5Ph-PXX) represented by Formula 16 and poly(a-methylstyrene)
(p-aMS), which is an insulating polymer, in mesitylene.
20 [0072]
The raw material solution prepared in this way was coated on a substrate by
a spin coat method. The same substrate as Example 1 was used as the substrate.
[0073]
Next, the coating film formed in this way was dried in a nitrogen
25 atmosphere at 60 °C for 1 hour. Accordingly, spontaneous phase-separation was
caused in the coating film, and a laminated structure of a gate insulating film formed
of poly(a-methylstyrene) and an organic semiconductor film formed of iC5Ph-PXX
formed thereon was formed.
[0074]
30 < Example 9>
A raw material solution was prepared by uniformly dissolving a compound
SP263815WO00
24/50
(abbreviated as iC6Ph-PXX) represented by Formula 17 and poly(a-methylstyrene)
(p-aMS), which is an insulating polymer, in mesitylene.
[0075]
The raw material solution prepared in this way was coated on a substrate by
5 a spin coat method. The same substrate as Example 1 was used as the substrate.
[0076]
Next, the coating film formed in this way was dried in a nitrogen
atmosphere at 60 °C for 1 hour. Accordingly, spontaneous phase-separation was
caused in the coating film, and a laminated structure of a gate insulating film formed
10 of poly(a-methylstyrene) and an organic semiconductor film formed of iC6Ph-PXX
formed thereon was formed.
[0077]

A raw material solution was prepared by uniformly dissolving a compound
15 represented by the following Formula 19 and poly(a-methylstyrene) (p-aMS), which
is an insulating polymer, in mesitylene.
[0078]
[Chem. 19]
H3c' v "•" ^ y Y ^ "*" "^ ^ ^ ^'"' ^
0
20 [0079]
The raw material solution prepared in this way was coated on a substrate by
a spin coat method. The same substrate as Example 1 was used as the substrate.
[0080]
Next, the coating film formed in this way was dried in a nitrogen
25 atmosphere at 60 °C for 1 hour. Accordingly, spontaneous phase-separation was
caused in the coating film, and a laminated structure of a gate insulating film formed
of poly(a-methylstyrene) and an organic semiconductor film formed of the
compound represented by Formula 19 formed thereon was formed.
SP263815WO00
25/50
[0081]

A raw material solution was prepared by uniformly dissolving a compound
represented by the following Formula 20 and poly(a-methylstyrene) (p-aMS), which
5 is an insulating polymer, in mesitylene.
[Chem. 20]
[0082]
The raw material solution prepared in this way was coated on a substrate by
10 a spin coat method. The same substrate as Example 1 was used as the substrate.
[0083]
Next, the coating film formed in this way was dried in a nitrogen
atmosphere at 60 °C for 1 hour. Accordingly, spontaneous phase-separation was
caused in the coating film, and a laminated structure of a gate insulating film formed
15 of poly(a-methylstyrene) and an organic semiconductor film formed of the
compound represented by Formula 20 formed thereon was formed.
[0084]
Carrier mobility of the organic transistors of Examples 1 to 9 and
Comparative Examples 1 and 2 was measured. Measurement results of the carrier
20 mobility of the organic transistors of Examples 1 to 9 are shown in Table 1. On the
other hand, organic transistors were produced by forming organic semiconductor
films by vacuum depositing C2Ph-PXX, C3Ph-PXX, and 9Ph-PXX. Here, before
the organic semiconductor films were formed, gate insulating films formed of
poly(a-methylstyrene) were formed in advance. In Table 1, the measurement
25 results of the carrier mobility of the organic transistors are also shown. In
Comparative Examples 1 and 2, organic transistors were also produced by forming
organic semiconductor films by vacuum depositing the compound represented by
26/50
SP263815WO00
Formula 19 or 20. Here, before the organic semiconductor films were formed, gate
insulating films formed of poly(a-methylstyrene) were formed in advance. The
measurement of the carrier mobility of the organic transistors was performed.
[0085]
5 [Table 1]
Example 1 (C2Ph-PXX)
Example 2 (C3Ph-PXX)
Example 3 (C4Ph-PXX)
Example 4 (C5Ph-PXX)
Example 5 (C6Ph-PXX)
Example 6 (C9Ph-PXX)
Example 7 (iC4Ph-PXX)
Example 8 (iC5Ph-PXX)
Example 9 (iC6Ph-PXX)
Mobility (polymer mixture)
cmTVs
0.9
1.1
0.68
0.60
1.3
1.3
0.80
1.0
0.74
Mobility (deposition)
cm2/Vs
0.48-0.65
0.60-0.81
0.41-0.65
[0086]
As shown in Table 1, in all the organic transistors of Examples 1 to 9, the
carrier mobility was greatly improved overall as compared with the organic
10 transistors using the organic semiconductor films formed by vacuum depositing
C2Ph-PXX, C3Ph-PXX, and C9Ph-PXX. The carrier mobility is comparable to
carrier mobility of a field effect transistor using amorphous silicon. The great
improvement of the carrier mobility is due to a good interface between the gate
insulating film and the organic semiconductor film formed by coating a uniform raw
15 material solution containing C2Ph-PXX, C3Ph-PXX, C4Ph-PXX, C5Ph-PXX,
C6Ph-PXX, C9Ph-PXX, iC4Ph-PXX, iC5Ph-PXX, or iC6Ph-PXX and poly(amethylstyrene),
which is a polymer, and allowing spontaneous phase-separation to be
expressed in a drying process of the coating film.
[0087]
20 Measurement of carrier mobility of the organic transistors of Comparative
Examples 1 and 2 and the organic transistor using the organic semiconductor film
formed by vacuum depositing the compound represented by Formula 19 or 20 was
performed. An improvement effect in the carrier mobility cannot be obtained by
27/50
SP263815WO00
forming the organic semiconductor film using the raw material solution to which
poly(a-methylstyrene) was added as the polymer in addition to the compound
represented by Formula 19 or 20.
[0088]
5 As described above, according to the first embodiment, by obtaining the
good interface between the organic semiconductor film 15 and the gate insulating
film 14, a high-performance organic transistor having sufficiently high carrier
mobility as compared with the organic transistor in the related art can be realized.
Further, in the organic semiconductor film 14 formed of at least one compound
10 among a compound represented by General Formula 1, a compound represented by
General Formula 2, a compound represented by General Formula 3, a compound
represented by General Formula 4, a compound having a structure represented by
General Formula 4, wherein R is a substituent other than an alkyl group, a compound
represented by General Formula 5, a compound represented by General Formula 6, a
15 compound having a structure represented by General Formula 5 or 6, wherein R is a
substituent other than an alkyl group, and a compound represented by General
Formula 7, since resistance to oxygen in the atmosphere^ light resistance, heat
resistance, water resistance, and solvent-resistance are highly stable, an organic
transistor having high stability can be realized. Further, since the organic
20 semiconductor film 14 has high process resistance, a degree of freedom in design of
a production process of the organic transistor is high, and a width of the process can
be widened.
[0089]
<2. Second embodiment
25 [Capacitor]
FIG 4 illustrates a capacitor according to a second embodiment.
[0090]
As illustrated in FIG 4, in the capacitor, an insulating film 22 is disposed on
a substrate 21. An electrode 23, an insulating film 24 as a dielectric, and an organic
30 semiconductor film 25 are sequentially laminated on the insulating film 22, and
therefore the capacitor is formed. The electrode 23 constitutes a lower electrode of
28/50
SP263815WO00
the capacitor, and the organic semiconductor film 25 constitutes an upper electrode
of the capacitor.
[0091]
. Like the organic semiconductor film 14 according to the first embodiment,
5 the organic semiconductor film 25 is formed of at least one compound among a
compound represented by General Formula 1, a compound represented by General
Formula 2, a compound represented by General Formula 3, a compound represented
by General Formula 4, a compound having a structure represented by General
Formula 4, wherein R is a substituent other than an alkyl group, a compound
10 represented by General Formula 5, a compound represented by General Formula 6, a
compound having a structure represented by General Formula 5 or 6, wherein R is a
substituent other than an alkyl group, and a compound represented by General
Formula 7. Further, like the insulating film 13b of the gate insulating film 13
according to the first embodiment, the insulating film 24 includes an insulating
15 polymer capable of forming an insulating film, and the polymer is selected from
among the previously mentioned polymers as needed. At this time, the organic
semiconductor film 25 and the insulating film 24 are continuously formed in a
thickness direction thereof by mutual phase-separation. A thickness of the
insulating film 24 is appropriately selected according to characteristics and the like
20 required for the capacitor. As the electrode 23, an organic semiconductor film, a
metal film, an alloy film, and the like may be used.
[0092]
As a material of the substrate 21, the same material as the substrate 11 of the
first embodiment may be used. As a material of the insulating film 22, the same
25 material as the insulating film 12 of the first embodiment may be used.
[0093]
[Method for Producing Capacitor]
FIGS. 5 A and 5B illustrate a method of producing the capacitor.
As illustrated in FIG. 5A, first, by a conventionally known method, an
30 insulating film 22 is formed on an entire surface of a substrate 21, and a conductive
film 26 is formed on the insulating film 22.
29/50
SP263815WO00
[0094]
On the other hand, a raw material solution containing at least one compound
among a compound represented by General Formula 1, a compound represented by
General Formula 2, a compound represented by General Formula 3, a compound
5 represented by General Formula 4, a compound having a structure represented by
General Formula 4, wherein R is a substituent other than an alkyl group, a compound
represented by General Formula 5, a compound represented by General Formula 6, a
compound having a structure represented by General Formula 5 or 6, wherein R is a
substituent other than an alkyl group, and a compound represented by General
10 Formula 7, and the previously mentioned insulating polymer is prepared. A solvent
of the raw material solution is appropriately selected from among the previously
mentioned solvents. Further, a mixing ratio (a mass ratio or a weight ratio) of the
compound and the insulating polymer in the raw material solution is selected as
needed.
15 [0095]
Next, as illustrated in FIG. 5B, the prepared raw material solution 27 is
coated or printed on the substrate 21, in which the conductive film 26 is formed, in a
film shape. As the coating or printing method of the raw material solution 27, the
same method as in the first embodiment may be used.
20 [0096]
Next, the film-shaped raw material solution 27 is dried. In the drying
process, the compound and insulating polymer contained in the raw material solution
27 are spontaneously phase-separated into layer shapes. As a result, after the drying,
as illustrated in FIG. 5B, an insulating film 24 formed of the insulating polymer and
25 an organic semiconductor film 25 formed of the compound on the insulating film 24
are continuously formed in a thickness direction.
[0097]
Next, the formed organic semiconductor film 25, the insulating film 24, and
the conductive film 26 are patterned in a predetermined shape by etching or the like.
30 An electrode 23 is formed by the patterned conductive film 26.
Therefore, the desired capacitor is produced.
SP263815WO00
30/50
[0098]
According to the second embodiment, by obtaining a good interface
between the organic semiconductor film 25 and the insulating film 24, the capacitor
having a good charge retention characteristic can be realized. Further, in the
5 organic semiconductor film 25 including at least one compound among a compound
represented by General Formula 1, a compound represented by General Formula 2, a
compound represented by General Formula 3, a compound represented by General
Formula 4, a compound having a structure represented by General Formula 4,
wherein R is a substituent other than an alkyl group, a compound represented by
10 General Formula 5, a compound represented by General Formula 6, a compound
having a structure represented by General Formula 5 or 6, wherein R is a substituent
other than an alkyl group, and a compound represented by General Formula 7, since
resistance to oxygen in the atmosphere, light resistance, heat resistance, water
resistance, and solvent resistance are highly stable, the capacitor having high stability
15 can be realized.
[0099]
The embodiments and examples have been specifically described, but the
technology is not limited to the embodiments and examples, and various
modifications are possible.
20 For example, numerical values, structures, configurations, shapes, materials,
and the like mentioned in the mode for carrying out and the embodiment are merely
examples, and different numerical values, structures, configurations, shapes,
materials, and the like may be used as needed.
25 Reference Signs List
[0100]
11 substrate
12 gate electrode
13 gate insulating film
30 13a insulating film
13b insulating film
# SP263815WO00
31/50
10
14 organic semiconductor film
15 source electrode
16 drain electrode
17 raw material solution
21 substrate
22 insulating film
23 electrode
24 insulating film
25 organic semiconductor film
26 conductive film
27 raw material solution

SP263815WO00
32/50
CLAIMS
Claim 1
A method of producing an organic transistor, the method comprising:
collectively forming a gate insulating film and an organic semiconductor
5 film by applying, onto a gate electrode disposed on a base substrate, a solution
including a polymer and at least one compound of a compound represented by
General Formula 1, a compound represented by General Formula 2, a compound
represented by General Formula 3, a compound represented by General Formula 4, a
compound having a structure represented by General Formula 4, in which R is a
10 substituent other than an alkyl group, a compound represented by General Formula 5,
a compound represented by General Formula 6, a compound having a structure
represented by General Formula 5 or 6, in which R is a substituent other than an
alkyl group, and a compound represented by General Formula 7, the gate insulating
film containing the polymer, the organic semiconductor film being formed on the
15 gate insulating film and containing the at least one compound; and
forming a source electrode and a drain electrode on the organic
semiconductor film.
[Chem. 1]
(1)
20 (where R is a linear or branched alkyl group)
[Chem. 2]
<2)
(where R is a linear or branched alkyl group)
[Chem. 3]
33/50
SP263815WO00
(3)
(where R is a linear or branched alkyl group)
[Chem. 4]
(4)
(where R is an alkyl group, and a number of R's is 2 to 5)
[Chem. 5]
(5)
R-
(where R is an alkyl group, and a number of R's is 1 to 5)
[Chem. 6]
(6)
(where R is an alkyl group, and a number of R's is 1 to 5)
[Chem. 7]
34/50
SP263815WO00
(7)
(where Al and A2 are represented by Formula 8)
[Chem. 8]
?XR
(8)
5 (where R is an alkyl group or another substituent, and a number of R's is 1
to 5)
10
Claim 2
The method according to claim 1, wherein the at least one compound is one
compound represented by the following Formulas 9 to 17.
[Chem. 9]
(9)
[Chem. 10]
(10)
[Chem. 11]
35/50
SP263815WO00
(11)
[Chem. 12]
(12)
[Chem. 13]
(13)
[Chem. 14]
[Chem. 15]
10 [Chem. 16]
(14)
(15)
[Chem. 17]
(16)
36/50
SP263815WO00
Claim 3
The method according to claim 1, wherein a solvent of the solution is at
5 least one of xylene, p-xylene, toluene, mesitylene, tetralin, anisole, benzene, 1,2-
dichlorobenzene, o-dichlorobenzene, cyclohexane, and ethyl cyclohexane.
Claim 4
The method according to claim 1, wherein the gate insulating film and the
10 organic semiconductor film are formed by forming an organic insulating film
containing a portion of the gate insulating film on the gate electrode, and applying
the solution onto the organic insulating film.
Claim 5
15 The method according to claim 1, wherein the polymer is at least one of
poly(a-methylstyrene) and cycloolefin copolymer.
Claim 6
An organic transistor comprising:
20 a gate insulating film and an organic semiconductor film collectively formed
by applying, onto a gate electrode disposed on a base substrate, a solution including a
polymer and at least one compound of a compound represented by General Formula
1, a compound represented by General Formula 2, a compound represented by
General Formula 3, a compound represented by General Formula 4, a compound
25 having a structure represented by General Formula 4, in which R is a substituent
other than an alkyl group, a compound represented by General Formula 5, a
compound represented by General Formula 6, a compound having a structure
represented by General Formula 5 or 6, in which R is a substituent other than an
SP263815WO00
37/50
alkyl group, and a compound represented by General Formula 7, the gate insulating
film containing the polymer, the organic semiconductor film being formed on the
gate insulating film and containing the at least one compound; and
a source electrode and a drain electrode disposed on the organic
semiconductor film.
[Chem. 18]
(1)
10
(where R is a linear or branched alkyl group)
[Chem. 19]
(where R is a linear or branched alkyl group)
[Chem. 20]
(2)
(3)
15
(where R is a linear or branched alkyl group)
[Chem. 21]
(where R is an alkyl group, a number of R's is 2 to 5)
(4)
SP263815WO00
38/50
[Chem. 22]
(5)
(where R is an alkyl group, a number of R's is 1 to 5)
[Chem. 23]
(6)
(where R is an alkyl group, and a number of R's is 1 to 5)
[Chem. 24]
(7)
(where Al and A2 are represented by Formula 8)
[Chem. 25]
^R -<2 (8)
(where R is an alkyl group or another substituent, and a number of R's is 1
The organic transistor according to claim 6, wherein the gate insulating film
39/50
SP263815WO00
and the organic semiconductor film are formed by forming an organic insulating film
containing a portion of the gate insulating film on the gate electrode, and applying
the solution onto the organic insulating film.
5 Claim 8
The organic transistor according to claim 6, wherein the polymer is at least
one of poly(a-methylstyrene) and cycloolefin copolymer.
Claim 9
10 An electronic apparatus comprising:
an organic transistor which includes a gate insulating film and an organic
semiconductor film collectively formed by applying, onto a gate electrode disposed
on a base substrate, a solution including a polymer and at least one compound of a
compound represented by General Formula 1, a compound represented by General
15 Formula 2, a compound represented by General Formula 3, a compound represented
by General Formula 4, a compound having a structure represented by General
Formula 4, in which R is a substituent other than an alkyl group, a compound
represented by General Formula 5, a compound represented by General Formula 6, a
compound having a structure represented by General Formula 5 or 6, in which R is a
20 substituent other than an alkyl group, and a compound represented by General
Formula 7, the gate insulating film containing the polymer, the organic
semiconductor film being formed on the gate insulating film and containing the at
least one compound, and a source electrode and a drain electrode disposed on the
organic semiconductor film.
25 [Chem. 26]
(1)
(where R is a linear or branched alkyl group)
[Chem. 27]
IP 40/50
SP263815WO00
(where R is a linear or branched alkyl group)
[Chem. 28]
(where R is a linear or branched alkyl group)
[Chem. 29]
(2)
(where R is an alkyl group, and a number of R's is 2 to 5)
[Chem. 30]
(3)
(4)
10
(5)
(where R is an alkyl group, and a number of R's is 1 to 5)
[Chem. 31]
41/50
SP263815WO00
10
to 5)
(6)
(where R is an alkyl group, a number of R's is 1 to 5)
[Chem. 32]
(where A1 and A2 are represented by Formula 8)
[Chem. 33]
-0* (8)
(where R is an alkyl group or another substituent, and a number of R's is 1
Claim 10
A method of producing a semiconductor device, the method comprising:
collectively forming an insulating film and an organic semiconductor film
by applying, onto a base substrate, a solution including a polymer and at least one
15 compound of a eompound represented by General Formula 1, a compound
represented by General Formula 2, a compound represented by General Formula 3, a
compound represented by General Formula 4, a compound having a structure
represented by General Formula 4, in which R is a substituent other than an alkyl
group, a compound represented by General Formula 5, a compound represented by
42/50
SP263815WO00
General Formula 6, a compound having a structure represented by General Formula
5 or 6, in which R is a substituent other than an alkyl group, and a compound
represented by General Formula 7, the insulating film containing the polymer, and
the organic semiconductor film formed on the insulating film and containing the at
least one compound.
[Chem. 34]
(t)
(where R is a linear or branched alkyl group)
[Chem. 35]
10
15
(where R is a linear or branched alkyl group)
[Chem. 36]
.0,
(where R is a linear or branched alkyl group)
[Chem. 37]
(2)
(3)
(4)
(where R is an alkyl group, a number of R's is 2 to 5)
[Chem. 38]
SP263815WO00
43/50
(5)
(where R is an alkyl group, a number of R's is 1 to 5)
[Chem. 39]
(6)
(where R is an alkyl group, and a number of R's is 1 to 5)
[Chem. 40]
(7)
(where Al and A2 are represented by Formula 8)
[Chem. 41]
//AR
(8)
(where R is an alkyl group or another substituent, and a number of R's is 1
11
A semiconductor device comprising:
an insulating film and an organic semiconductor film collectively formed by
SP263815WO00
44/50
10
applying, onto a base substrate, a solution including a polymer and at least one
compound of a compound represented by General Formula 1, a compound
represented by General Formula 2, a compound represented by General Formula 3, a
compound represented by General Formula 4, a compound having a structure
represented by General Formula 4, in which R is a substituent other than an alkyl
group, a compound represented by General Formula 5, a compound represented by
General Formula 6, a compound having a structure represented by General Formula
5 or 6, in which R is a substituent other than an alkyl group, and a compound
represented by General Formula 7, the insulating film containing the polymer, the
organic semiconductor film being formed on the insulating film and containing the at
least one compound.
[Chem. 42]
(0
15
(where R is a linear or branched alkyl group)
[Chem. 43]
(2)
(where R is a linear or branched alkyl group)
[Chem. 44]
(3)
20 (where R is a linear or branched alkyl group)
[Chem. 45]
45/50
SP263815WO00
(4)
(where R is an alkyl group, a number of R's is 2 to 5)
[Chem. 46]
R-7T
(5)
(where R is an alkyl group, and a number of R's is 1 to 5)
[Chem. 47]
(6)
(where R is an alkyl group and a number of R's is 1 to 5)
[Chem. 48]
(7)
(where Al and A2 are represented by Formula 8)
[Chem. 49]
SP263815WO00
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* (8)
(where R is an alkyl group or another substituent, and a number of R's is 1
to 5)
5 Claim 12
An electronic apparatus comprising:
a semiconductor device which includes an insulating film and an organic
semiconductor film collectively formed by applying, onto a base substrate, a solution
including a polymer and at least one compound of a compound represented by
10 General Formula 1, a compound represented by General Formula 2, a compound
represented by General Formula 3, a compound represented by General Formula 4, a
compound having a structure represented by General Formula 4, in which R is a
substituent other than an alkyl group, a compound represented by General Formula 5,
a compound represented by General Formula 6, a compound having a structure
15 represented by General Formula 5 or 6, in which R is a substituent other than an
alkyl group, and a compound represented by General Formula 7, the insulating film
containing the polymer, the organic semiconductor film formed on the insulating film
and containing the at least one compound.
[Chem. 50]
20
(1)
(where R is a linear or branched alkyl group)
[Chem. 51]
47/50
SP263815WO00
(where R is a linear or branched alkyl group)
[Chem. 52]
(where R is a linear or branched alkyl group)
[Chem. 53]
(2)
(3)
(4)
(where R is an alkyl group, and a number of R's is 2 to 5)
[Chem. 54]
(5)
(where R is an alkyl group, and a number of R's is 1 to 5)
[Chem. 55]
48/50
SP263815WO00
(6)
(where R is an alkyl group, and a number of R's is 1 to 5)
[Chem. 56]
(7)
(where Al and A2 are represented by Formula 8)
[Chem. 57]
^AR
(8)
(where R is an alkyl group or another substituent, and a number of R's is 1
SP263815WOD0
48/50
(6)
(where R is an alkyl group, and a number of R's is 1 to 5)
[Chem. 56]
A2
(7)
A2
(where Al and A2 are represented by Formula 8)
[Chem. 57]
//AR
(8)
(where R is an alkyl group or another substituent, and a number of R's is 1
TO-5T
10
Dated this 23.09.2013
[NEHA SRTVASTAVA]
OF REMFRY & SAGAR
ATTORNEY FOR THE APPLICANT^]
50/50
SP263815WO00
HrR
(5)
(6)
(where R is an alkyl group)
5 (where Al and A2 are represented by Formula 8)
(7)
~Pf (8)
(where R is an alkyl group or another substituent)
Representative Drawing
10 FIG 1