The present invention relates to the field of radio frequency components.
More particularly, it relates to the field of components in "Substrate Integrated Waveguide" - SIW - technology of the type including a substrate, made of a dielectric material, and first and second layers, made of a conductive material, the first and second layers covering two opposite faces of the substrate.
The plurality of metallized holes in the component form vias between the first and second conductive layers, which locally modify the boundary conditions that constrain the propagation of the electromagnetic field in the substrate, i.e., the properties of the waveguide that the component constitutes.
Thus, the pattern formed by the plurality of metallized holes defines the function of the component.
However, the disparities in manufacturing a component in SIW technology require adjusting the parameters of the function performed by a particular component so that it corresponds precisely to the desired function. Thus, it is necessary to make adjustments to the parameters such as amplitude, phase, coupling, phase shift, etc. of the output signals of the considered component.
There are many state-of-the-art documents on the adjustment of the parameters of components in SIW technology. However, they recommend the use of additional active components to adjust the parameters of a SIW technology component. For example, CN106129553 describes an SIW filter, the response of which is adjusted by surface-mounted PIN diodes. As a further example, CN107394322 describes a filter in SIW technology, whose response is adjusted by surface-mounted MEMS.
This solution is not practical since it requires powering these additional active components. Moreover, by multiplying the components, it poses a major problem of reliability. Finally, in electromagnetic signal reception applications for example, the power handling is limited by the capacities of the additional active components used.
The purpose of this invention is to solve this problem, in particular by proposing a manufacturing method allowing the parameters of a component to be adjusted so as to avoid having to add active components later.

To this end, the invention has as its object a method of manufacturing a component in "Substrate Integrated Waveguide" - SIW - technology of the above-mentioned type, characterized in that it consists of: making a generic component having only a plurality of metallized holes, each metallized hole forming a via between the first and second layers; and configuring the generic component so as to obtain a final component, by de-metallizing at least one metallized hole so as to obtain a de-metallized hole, the remaining metallized holes being arranged in a pattern suitable for guiding electromagnetic waves in the substrate in such a way as to impart a characteristic function to the final component.
According to particular embodiments, the manufacturing method includes one or more of the following features, taken alone or in any technically possible combination:
- the plurality of metallized holes of the generic component form a super-pattern, the super-pattern resulting from the superposition of a plurality of patterns, each pattern being associated with a possible function of the final component, and wherein the configuration of the generic component consists of selecting, for the final component, a characteristic function among the different possible functions by de-metallizing the metallized holes of the plurality of metallized holes that prevent conferring the selected characteristic function to the final component.
- the plurality of metallized holes of the generic component form a super-pattern, the super-pattern resulting from the superposition of a plurality of patterns, each pattern being associated with a possible value of a parameter of the characteristic function of the final component, and wherein the configuration of the generic component consists of selecting, for the final component, a value of the parameter of the characteristic function by de-metallizing the metallized holes of the plurality of metallized holes that prevent conferring the selected value to the parameter of the characteristic function of the final component.
- the making of a generic component includes, in order to obtain each metallized hole of the plurality of metallized holes, a step of perforating the substrate with an initial hole, and then a step of metallizing said initial hole, and wherein, when configuring the generic component, the de-metallization of a particular metallized hole consists of perforating the generic component, at the location of said particular metallized hole, with a hole having a larger diameter than the initial hole having led, by metallization, to the said particular metallized hole
- the perforating of the substrate to obtain an initial hole and/or the perforating to obtain a de-metallized hole is carried out by means of a laser tool, the characteristics of the laser beam being chosen according to the characteristic dimensions of the perforating to be carried out.

- the method includes an initial step of designing the super-pattern consisting in
optimizing each pattern of the super-pattern to take into account the presence of de-
metallized holes of the other patterns of the super-pattern.
The invention also relates to a component in SIW technology resulting from the implementation of the foregoing manufacturing method.
According to particular embodiments, the method includes one or more of the following features, taken alone or in any technically possible combination:
- the component includes a substrate, made of a dielectric material, and first and second layers, made of a conductive material, the first and second layers covering two opposite faces of the substrate, the component including a plurality of metallized holes, each metallized hole forming a via between the first and second layers, and at least one de-metallized hole, the plurality of metallized holes of the component forming a pattern suitable for guiding electromagnetic waves into the substrate so as to confer a characteristic function on the component;
- the characteristic function of the component is a filter function, characterized by a particular value of at least one gain parameter, a transmission line function, characterized by a particular value of at least one phase shift parameter, or a coupler function, characterized by a particular value of at least one coupling parameter.
It is also an object of the invention to provide a circuit incorporating the foregoing SIW technology component.
The invention and its advantages will be better understood upon reading the following detailed description of a particular embodiment, given only as a non-limiting example, this description being made with reference to the appended drawings in which:
- Figure 1 is a representation, in perspective and in partial section, of a component in SIW technology resulting from the implementation of the configuration method according to the invention.
- Figure 2 is a schematic representation of a first embodiment of the manufacturing method according to the invention allowing the selection of a characteristic function among several possible characteristic functions carried by a generic component.
- Figure 3 is a representation of a first variant of a second embodiment of the manufacturing method according to the invention allowing to adjust the gain of a generic component of the filter type.
- Figure 4 is a graph representing the gain as a function of frequency for a
component resulting from the implementation of the method of Figure 3.

- Figure 5 is a representation of a second variant of a second embodiment of the manufacturing method according to the invention allowing to adjust the phase shift of a generic component of the waveguide type.
- Figure 6 is a graph representing the phase shift as a function of frequency for a component resulting from the implementation of the method of Figure 5.
- Figure 7 is a representation of a third variant of a second embodiment of the manufacturing method according to the invention allowing to adjust the coupling of a generic coupler-type component; and
- Figure 8 is a graph representing the coupling as a function of frequency for a component resulting from the implementation of the method of Figure 7.
Figure 1 shows a component 10 in "Substrate Integrated Waveguide" - SIW technology.
The component 10 includes a substrate 14, which is made of a dielectric material. The substrate 14 presents a small thickness. It includes, on each of its large faces, first and second conductive layers, 12 and 16 respectively, which are made of a material that conducts electric current, such as a metal, for example copper (possibly covered with a finishing film).
The component 10 includes a plurality of through holes. These are of two kinds: metallized holes, referred to by the number 21, or de-metallized holes, referred to by the number 22.
A metallized hole 21 constitutes a via establishing electrical continuity between the first and second layers 12 and 16 through the substrate 14.
A metallized hole 21 is made by perforating an initial hole of diameter do in the substrate 14, and then providing an electrically conductive material so as to metallize the inner surface of the initial hole and thereby obtain a metallized hole of diameter di (di being less than do).
Preferably, the conductive material for metallizing the initial hole is identical to the material used to make the first and second conductive layers 12 and 16. Preferably, the metallization of the faces of the substrate 14 and of the various initial holes is performed in a single metallization step.
A de-metallized hole 22 is obtained from a corresponding metallized hole 21, the metallization of which has been removed so as to eliminate the electrical contact between the first and second layers 12 and 16 that the corresponding metallized hole 21 established. For example, a de-metallized hole 22 is made by enlarging the corresponding metallized hole 21 so as to be certain to remove all of the metallization. The de-metallized hole 22 is

obtained, for example, by enlarging the corresponding metallized hole 21 with a tool to make a hole of diameter 62- The diameter 62 is chosen to be larger than the diameter do of the initial hole from which the corresponding metallized hole 21 was obtained, in order to be sure to remove all of the metallization. Advantageously, the value of the diameter 62 takes into account the uncertainties on the centering of the perforating tool with respect to the center of the corresponding metallized hole to be removed.
The perforating tool is preferably a laser tool, whose beam characteristics are adapted to the dimensions of the hole to be created. Incidentally, a laser can be used to create holes that are not necessarily circular in cross-section, such as holes with an oval or rectangular cross-section. Consequently, what has just been described in the case of holes with a circular cross-section can be immediately generalized to other shapes of hole cross-section. Alternatively, the perforating tool may be a mechanical tool, for example with a drill bit.
The metallized holes 21 are arranged in a pattern. For example, in Figure 1, the metallized holes 21 are arranged in two parallel rows, a first row 18 and a second row 19.
Generally speaking, the topology of the pattern formed by the plurality of metallized holes (shape of the rows of metallized holes, spacing p between two successive metallized holes along a row, the spacing between two rows, etc.) defines the characteristic function of the component, both in the nature of this function and in the particular values of the parameters of this function.
Indeed, the metallized holes 21 locally establish a short circuit between the two conductive layers, so as to define boundary conditions that influence the way the electromagnetic field is guided through the thickness of the substrate 14, between the layers 12 and 16.
It should be noted that if a metallized hole has been de-metallized by mistake, it is still possible to re-establish electrical contact between the first and second layers 12 and 16, for example by means of a drop of solder 23 filling the de-metallized hole. Alternatively, a rivet or a through wire can be used.
Generally speaking, the manufacturing method according to the invention consists first of manufacturing a generic component in which all the holes are metallized holes. The metallized holes form a super-pattern on the surface of the generic component.
The manufacturing method then consists of converting some of the metallized holes into de-metallized holes in order to configure the generic component to obtain a final component exhibiting a characteristic function.

The configuration can be understood at two levels. In a first embodiment of the manufacturing method, it refers to the selection of a particular function from a plurality of possible functions. The super-pattern of the generic component then results from the superposition of the patterns associated with each of the possible functions that can be conferred on the final component. The metallized holes of the patterns associated with the possible functions that are not retained in the configuration of the component are de-metallized, and only the metallized holes associated with the pattern of the function retained for the final component are retained (or, at least, the metallized holes that prevent the component from performing the retained function are de-metallized).
In a second embodiment of the manufacturing method, this involves adjusting at least one parameter of the characteristic function of the final component. The super-pattern then results from the superposition of different variants of the pattern associated with the function, each variant corresponding to a possible value of the said parameter. The metallized holes of the variants associated with values that are not retained for the said parameter are de-metallized during the configuration, and only the metallized holes corresponding to the variant of the pattern that allows to confer a specific value to the said parameter of the function are retained (or, at least, the metallized holes that prevent the component from realizing the characteristic function with the retained value for the parameter of the function are de-metallized).
Obviously, as an alternative, the manufacturing method can combine these two ways of configuring the generic component.
Referring to Figure 2, the configuration method 100 consists of selecting a characteristic function from two possible functions.
The method 100 includes a first step 102 of making a generic component 110 including only metallized holes 121. The metallized holes form a super-pattern resulting from the superposition of a first pattern associated with the first function and a second pattern associated with the second function.
The first pattern consists of two rows of metallized holes 121, angled at 90°, respectively 116 and 117, so as to form a waveguide for performing the first function consisting of transmitting a signal applied to the input of the third region R3 towards the output of the first region Ri. Advantageously, the first pattern includes two additional metallized holes 123 disposed in the vicinity of the angled portion of the row 116.
The second pattern consists of two rectilinear rows of metallized holes 121, 118 and 119 respectively, so as to form a waveguide for performing the second function of

transmitting a signal applied to the input of the third region R3 towards the output of the second region R2.
The first and second patterns partially merge to define the third region R3.
The method 100 continues with a step 104 of configuring the generic component 110 so as to obtain either a first component 130 performing the first transmission function or a second component 150 performing the second transmission function.
The first component 130 includes metallized holes 141 and de-metallized holes 142. It is obtained from the generic component 110 by de-metallizing the metallized holes of the second pattern, or more simply the metallized holes that prevent the propagation of the electromagnetic field from the third region R3 towards the first region R1, i.e. the holes of the segment 139 of the row 119. On the other hand, the other holes of the super-pattern remain metallized type holes 141, in particular, the two additional metallized holes 123 in the angled portion of the first pattern that allow to modify the boundary conditions in order to help guide the wave along a 90° path.
Similarly, the second component 150 includes metallized holes 161 and de-metallized holes 162. It is obtained from the generic component 110 by de-metallizing the metallized holes of the first pattern, or, more simply, the metallized holes of the first pattern that prevent the propagation of the field from the third region R3 towards the second region R2, i.e., the holes of the segment 159 of the row 116, as well as the two additional metallized holes 123 in the angled portion of the first pattern. In contrast, the remaining holes in the super-pattern remain holes of the metalized type 161.
Referring to Figure 3, the manufacturing method 200 begins with a step 202 of making a generic component 210. The generic component 210 carries a super-pattern corresponding to different variants of a characteristic filter-like function. Each variant is associated with a particular value of a gain parameter of the characteristic function. The paper F. Parment, A. Ghiotto, T.P. Vuong, J.M. Duchamp, and K. Wu, "Low-loss air-filled substrate integrated waveguide (SIW) band-pass filter with symmetric inductive posts," Oral, 45th IEEE European Microwave Conference (EuMC), Paris, 6-11 Sep. 2015. (DOI: 10.1109/EuMC.2015.7345875 - IEEE Xplore) explains how the vias positions of a pattern can be theoretically determined from an electrical model of the filter.
The generic component 210 presents only metallized holes 221, which are here symmetrically arranged on either side of a longitudinal axis A of the generic component 210. Alternatively, the component could be non-symmetrical.
The metallized holes 221 are not strictly aligned in two parallel rows, 218 and 219, but with some distribution around these rows.

The method 200 continues with a configuration step 204 consisting of adjusting the value of the gain parameter of the transmission line by de-metallizing, in a symmetrical manner with respect to the axis A, some metallized holes 221 of the generic component 210.
A first final circuit 230 can be obtained. It includes metallized holes 241 and de-metallized holes 242.
A second final circuit 250 may be obtained. It includes metallized holes 261 and de-metallized holes 262.
A third final circuit 270 may be obtained. It includes metallized holes 281 and de-metallized holes 282.
The patterns formed by the remaining metallized holes differ from one circuit 230, 250 and 270 to the next. They each correspond to a variant of the function and therefore to a gain of the filter.
These gains are shown in Figure 4 as a function of frequency. Thus, on this graph, depending on the position of the de-metallized and metallized holes, the maximum gain is obtained for characteristic frequencies that differ from one component to another.
Thus, the operator chooses the value of the gain of the final circuit that he manufactures by de-metallizing some holes rather than others.
Referring to Figure 5, the manufacturing method 300 begins with a step 302 of making a generic component 310 performing a phase shifter function. The metallized holes 321 of the generic component 310 form a super-pattern consisting of two rows, 318 and 319, arranged parallel to each other on either side of a longitudinal axis A of the generic component 310. Beyond the rows 318 and 319 with respect to the axis A, rows of metallized holes are provided to delineate the maximum width of the waveguide.
The metallized holes in a single row are, for example, spaced apart by a constant, small pitch.
The method 300 continues with a configuration step 304 consisting of de-metallizing a set of metallized holes in rows 318 and 319 to adjust the value of the phase shift introduced by the waveguide between the output signal and the input signal.
Thus, it is possible to fabricate a first final component 330 including two rows of holes, 348 and 349, each row including metallized holes 341 on its end portions and de-metallized holes 342 on its central portion.
It is also possible to fabricate, a second final component 350 by de-metallizing all of the metallized holes in rows 318 and 319 of generic component 310. The second final component 350 includes rows 358 and 359 consisting solely of de-metallized holes 362.

The graph in Figure 6 shows the evolution of the phase shift introduced by each of the components 310, 330, and 350 as a function of the frequency of the input signal. It can be seen, for example, for the value 13.3 GHz of the frequency, that the phase shift introduced by the generic component 310 is about -55°, that the phase shift introduced by the first final component 330 is about -78° and that the phase shift introduced by the second final component 350 is about -100°.
Thus, in this alternative embodiment of the manufacturing method, the phase shift parameter of the waveguide can be adjusted by de-metallizing some of the metallized holes in the generic component. The super-pattern corresponds here to the superposition of the patterns of the different variants of the waveguide function, each variant corresponding to a value of the phase shift.
More precisely and to illustrate the relation between the topological parameters of a pattern and the properties of the associated function, the distance p between two metallized holes of a row, the diameter do of each metallized hole (evaluated at the interface between the metallization and the substrate), as well as the width W between the two opposite rows allows to calculate an effective width according to the following relationship:
Weff=W-((do)2/(0.95*p)
where Weff is the desired equivalent width of a conventional waveguide filled with the same dielectric material as the substrate 14 is made of.
To avoid radiation losses between vias, do and p are chosen so that:
p/d0<2.5
The phase constant of the TE10 mode of electromagnetic field propagation in the waveguide is given by the following relation:
with f the frequency, c the speed of light, and £r the relative permittivity of the substrate 14.
Thus, locally changing the effective width Weff by de-metallizing vias changes the phase constant, introducing a phase shift.
The total phase shift is then given by the relation:
# = (ft - P2) * I
with 0! the phase constant for the section of the waveguide that retains the metallized vias, and f52 the phase constant for the section of the waveguide for which the

metallized vias have been removed, and I the length over which the metallized vias have been removed.
These results are for example presented in the paper M. Bozzi, A. Georgiadis and K. Wu, "Review of substrate-integrated waveguide circuits and antennas," in IET Microwaves, Antennas & Propagation, vol. 5, no. 8, pp. 909-920, 6 June 2011, doi: 10.1049/iet-map.2010.0463, or in the paper M. Bozzi, M. Pasian, L. Perregrini, and K. Wu, "On the Losses in Substrate Integrated Waveguides and Cavities," International Journal Microwave and Wireless Technologies, 2009.
Note that the larger the central portion of each row delimiting the waveguide, which is made of de-metallized holes, the greater the phase shift.
The adjustment of the phase shift can be very fine since it can consist in extending hole by hole the extent of the central portion of each row. For example, at each de-metallization of a via, the operator can measure the value of the phase shift on a test bench and choose to continue the de-metallization to reach the desired value of the phase shift.
In Figure 7, the manufacturing method 400 allows the coupling parameter to be adjusted in a component performing the coupler characteristic function.
The method 400 begins with a step of making 402 a generic component 410.
The plurality of metallized holes 421 form a super-pattern consisting of three rows 417, 418, and 419, arranged in parallel. The middle row extends along the longitudinal axis A of the generic component. The top and bottom rows, 417 and 419, are here at the same distance from the center row 418 but could alternatively be at different distances from the center row.
Thus, the center row 418 and the top row 417 define a first waveguide 412, while the center row 418 and the bottom row 419 define a second waveguide 411.
The center row 418 is "continuous" so that there is no coupling between the first and second waveguides 411 and 412 in the generic component.
The method 400 continues with a configuration step 404 allowing the amount of coupling between the first and second waveguides to be adjusted by creating openings in the center row.
For example, a first final circuit 430 may be obtained. This includes metallized holes 441 and de-metallized holes 442. The de-metallized holes are obtained by de-metallizing a fraction of the metallized holes in the center row 438 so as to create a leakage between the first and second waveguides. For example, in a central portion of the center row 438, two out of three holes are of the de-metallized type.

In a similar manner, a second final circuit 450 may be obtained, which includes metallized holes 461 and de-metallized holes 462. In a central portion of the center row 438, every other hole is of the de-metallized type.
Finally, a third final circuit 470 may be obtained, which includes metallized holes 481 and de-metallized holes 482. In a central portion of the center row 478, every third hole is of the de-metallized type.
The coupling (expressed in decibels) of the first, second, and third circuits 430, 450, and 470 are shown in Figure 8. For example, for the frequency 13.3 GHz, the first final circuit 430 presents a coupling of about -20 dB, the second final circuit 450 presents a coupling of about -25 dB, and the third final circuit 470 presents a coupling of about -30 dB.
The greater the leakage between the two waveguides of the component, the greater the coupling.
Thus by implementing the configuration method 400 it allows the operator to adjust the value of the coupling parameter of a coupler type component.
The adjustment can be very fine since at each de-metallization of a metallized hole, the operator can measure the coupling value on a test bench and choose to continue the de-metallization to reach the desired coupling value.
In a particularly advantageous manner, upstream of the manufacturing steps of the method according to the invention, a step of designing the topology of the super-pattern is performed. It consists, for example, in separately designing a first version of each of the patterns of the various functions (or function variants) brought together on the generic component. Then, for a particular function, the first version of the corresponding pattern is modified by inserting de-metallized holes according to the first versions of the patterns of the other functions. The response of this modified version of the pattern is then adjusted by moving the metallized holes to take into account the openings resulting from the presence of the de-metallized holes. We thus obtain a second version of the pattern associated with each function. These steps are repeated to converge on patterns that allow the desired functions to be obtained, these patterns being optimized to take into account the presence of de-metallized holes.
The implementation of the present manufacturing method makes it possible to rectify the errors or disparities affecting the industrial fabrication of a component in SIW technology. The result is a series of components with a very low disparity in their properties.
The present method also makes it possible to produce a generic component in large series. This reduces manufacturing costs. Then, depending on the specific needs of a user or an application, a smaller number of components can be configured.

The present invention can be applied by adopting the patterns of the functions performed by the components of the prior art, in particular in such a way as to allow the adjustment of their parameters.
In the present description, the case of a component, which is suitable for performing a single function has been presented. However, the invention extends directly to circuits in SIW technology, which integrate, on the same substrate, several components, i.e. several functions. For example, a circuit may include a first component of the type of component 130 and a second component of the type of component 230.
The present invention may also be combined with active components which, are implemented in the prior art to adjust the parameter(s) of a function. For example, the present invention is used to select a function from a plurality of possible functions, and then active components are mounted on the final component to adjust the parameters thereof.
As a further example, instead of trying to adjust two parameters of the same characteristic function of a component, it may be preferable to place, in a circuit, two replicas of this component in series, the first allowing the adjustment of the first parameter independently of the second parameter, and conversely the second replica allowing the adjustment of the second parameter independently of the first parameter.
The diameter of the holes, the distance between two holes of the same row, the distance between two rows laterally delimiting a waveguide, the thickness of the substrate or its length or width dimensions are similar to those of the prior art.
In the present description, the case of a substrate bearing conductive layers on both its outer sides has been presented. This teaching extends directly to the case of a more complex stack alternating substrates and conductive layers. The de-metallization of a via between two conductive layers of the stack is performed by perforating a de-metallized through hole or a de-metallized blind hole in the component to remove the electrical contact between these two conductive layers that was established by the said via.

CLAIMS
1. A manufacturing method (100) of a Substrate Integrated Waveguide - SIW -
component of the type including a substrate (14), made of a dielectric material, and first and
second layers (12, 16), made of a conductive material, the first and second layers covering
two opposite faces of the substrate, characterized in that the method consists of:
- making (102) a generic component (110) including only a plurality of metallized holes (121), each metallized hole forming a via between the first and second layers; and,
- configuring (104) the generic component into a final component (130, 150) by de-metallizing at least one metallized hole to obtain a de-metallized hole (142, 162), the remaining metallized holes (141, 161) being arranged according to a specific pattern to guide electromagnetic waves into the substrate in a manner to impart a characteristic function to the final component

2. The manufacturing method (100) according to claim 1, wherein the plurality of metallized holes (121) of the generic component (110) form a super-pattern, the super-pattern resulting from the superposition of a plurality of patterns, each pattern being associated with a possible function of the final component, and wherein the configuration (104) of the generic component consists of selecting, for the final component, a characteristic function among the different possible functions by de-metallizing the metallized holes of the plurality of metallized holes that prevent the selected characteristic function from being conferred to the final component.
3. The manufacturing method (200, 300, 400) according to claim 1 or claim 2, wherein the plurality of metallized holes (221, 321, 421) of the generic component (210, 310, 410) form a super-pattern, the super-pattern resulting from superimposing a plurality of patterns, each pattern being associated with a possible value of a parameter of the characteristic function of the final component, and wherein the configuration (204,304,404) of the generic component consists of selecting, for the final component, a value of the parameter of the characteristic function by de-metallizing the metallized holes of the plurality of metallized holes that prevent the parameter of the characteristic function of the final component from conferring the selected value.
4. The manufacturing method (100) according to any one of the preceding claims, wherein the step of making (102) a generic component includes, to obtain each metallized hole of the plurality of metallized holes (121), a step of perforating the substrate (14) with an initial hole, then a step of metallizing the said initial hole, and wherein, in configuring (104) the generic component (110), the de-metallizing of a particular metallized hole

consists of perforating the generic component, at the said particular metallized hole, with a hole having a larger diameter than the initial hole that led, by metallization, to the said particular metallized hole.
5. The manufacturing method (100) according to claim 4, wherein the perforating of the substrate (14) to obtain an initial hole and/or the perforating to obtain a de-metallized hole is performed by means of a laser tool, the characteristics of the laser beam being selected as a function of the characteristic dimensions of the perforating to be performed.
6. The manufacturing method (100) according to claim 2 or claim 3, including an initial step of designing the super-pattern consisting of optimizing each pattern of the super-pattern to take into account the presence of de-metallized holes of the other patterns of the super-pattern.
7. A "Substrate Integrated Waveguide" - SIW component (130, 150, 230, 250, 270, 330, 350, 430, 450, 470), characterized in that it results from the implementation of a manufacturing method (100, 200, 300, 400) in accordance with any one of the preceding claims.
8. The SIW technology component (130) according to claim 7, characterized in that it includes a substrate (14), made of a dielectric material, and first and second layers (12,16), made of a conductive material, the first and second layers covering two opposite faces of the substrate, the component including a plurality of metallized holes (141) each metallized hole forming a via between the first and second layers, and at least one de-metallized hole (142), the plurality of metallized holes in the component forming a specific pattern for guiding electromagnetic waves into the substrate so as to confer a characteristic function to the component.
9. The SIW technology component (230, 330) according to any one of claims 7 to 8, wherein the characteristic function of the component is a filter function, characterized by a particular value of at least one gain parameter, a transmission line function, characterized by a particular value of at least one phase shift parameter, or a coupler function, characterized by a particular value of at least one coupling parameter.
10. A circuit integrating a plurality of components on a single substrate (14), characterized in that each component of the plurality of components is a SIW technology component according to any one of claims 7 to 9.