CLAIMS
1. A microelectronic device comprising:
a substrate having a layer of dielectric material that includes a feature with a
depression;
a Tungsten containing barrier liner layer formed in the depression of the feature; and a Cobalt conductive layer deposited on the Tungsten containing barrier liner layer in
the depression of the feature with the Tungsten containing barrier liner layer to provide
adhesion for the Cobalt conductive layer.
2. The microelectronic device of claim 1, wherein the Tungsten containing barrier liner layer comprises a Tungsten Nitride layer.
3. The microelectronic device of claim 1, wherein the Tungsten containing barrier liner layer comprises a Tungsten containing layer and at least one of a transition metal layer and a transition metal nitride layer.
4. The microelectronic device of claim 1 wherein Cobalt conductive layer is deposited on the Tungsten containing barrier liner layer in the depression of the feature without voids being formed.
5. The microelectronic device of claim 1, wherein the Tungsten containing barrier liner layer has a thickness of 1 to 25 Angstroms.
6. The microelectronic device of claim 1, wherein the Tungsten containing barrier liner layer includes at least one dopant to modify adhesion and diffusion barrier properties.
7. The microelectronic device of claim 1, wherein the Tungsten containing barrier liner layer is deposited with chemical vapor deposition or atomic layer deposition with organometallic precursors and no halogen based precursors.
8. A microelectronic device comprising:
a substrate having a layer of dielectric material that includes a feature with a depression;

a Tungsten containing barrier liner layer deposition in the depression of the feature; and
a Cobalt conductive layer deposited on the Tungsten containing barrier liner layer in the depression of the feature with Tungsten precursors for the deposition of the Tungsten containing barrier liner layer being compatible with the Cobalt conductive layer.
9. The microelectronic device of claim 8, wherein the Tungsten containing barrier liner
layer comprises at least one of a Tungsten Nitride layer, a Tungsten Carbide layer, and a
Tungsten Carbide Nitride layer.
10. The microelectronic device of claim 8, wherein the Tungsten (W) precursors for the
deposition of the Tungsten containing barrier liner layer comprise unsubstituted and
substituted cyclopentadienyl ligands.
11. The microelectronic device of claim 10 wherein the cyclopentadienyl ligands comprise chemical formulas of W(Cp)R3, W(Cp) 2R2, and W(Cp) 3R where Cp is cyclopentadienyl, methylcyclopentadenyl, ethylcyclopentadienyl, tert-butylcyclopentadenyl, isopropylcyclopentadienyl, or any other substituted cyclopentadiene ligand and R is carbonyl, hydride, nitrosyl, trimethylsilyl, methyltrimethylsilyl, or amido.
12. The microelectronic device of claim 8, wherein the Tungsten (W) precursors for the deposition of the Tungsten containing barrier liner layer comprise a mixed amino or imino compound having a chemical formula of WCNR^) 2(NR2) 2 with R1 and R2 being a methyl, ethyl, propyl, isopropyl, tert-butyl, trimethylsilyl, methyltrimethylsilyl, or other suitable group.
13. The microelectronic device of claim 12, wherein R1 and R2 are not the same moity.
14. The microelectronic device of claim 8, wherein the Tungsten (W) precursors for the deposition of the Tungsten containing barrier liner layer comprise a chemical formula of W(NR:R2) 2(NR3) 2 with R1 and R2 being a methyl, ethyl, propyl, isopropyl, tert-butyl, trimethylsilyl, methyltrimethylsilyl, or other suitable group.
15. The microelectronic device of claim 8, wherein the Tungsten containing barrier liner layer has a thickness of 1 to 25 Angstroms.

16. The microelectronic device of claim 8, wherein the Tungsten containing barrier liner layer is deposited with chemical vapor deposition or atomic layer deposition with organometallic precursors and no halogen based precursors.
17. A method comprising:
providing a substrate having a layer of dielectric material that includes a feature with a depression that is to be filled with a conducting metal to form an electrically conducting interconnect;
depositing a Tungsten containing barrier liner layer on the feature; and depositing a Cobalt layer to fill the feature including the depression and also form an interconnect layer.
18. The method of claim 17, further comprising:
densifying the Tungsten containing barrier liner layer with a hydrogen based plasma or an ammonia based plasma.
19. The method of claim 17, wherein the Tungsten containing barrier liner layer comprises a
Tungsten Nitride layer.
20. The method of claim 17, wherein the Tungsten containing barrier liner layer comprises a
Tungsten containing layer and at least one of a transition metal layer and a transition metal
nitride layer.