1. A polysiloxane, comprising at least one segment selected from a molecular structure shown by
formula 1,
wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom.
2. The polysiloxane according to claim 1, wherein the Q is a structural segment shown by formula
2. ' .
HO OH
R3 R2 Formula 2 p -
i n i
wherein in formula 2, X is an alkyl having less than 7 carbon atoms, or an alkyl having less than 7 non-hydrogen atoms in the main chain and containing a heteroatom; Ri, R2, and R3 are each independently a hydrogen atom, or a substituent having less than 3 carbon atoms, or the R2 binds to a carbon atom on the X to form a cyclic substituent.
3. The polysiloxane according to claim 2, wherein the X is an alkyl having less than 7 non-hydrogen atoms in the main chain and containing a heteroatom.
4. The polysiloxane according to claim 2, wherein the Ri, R2, and R3 are each independently a hydrogen atom, or a substituent having 1 carbon atom, or the R2 binds to a carbon atom on the X to form a cyclic substituent.
5. The polysiloxane according to any one of claims 2 to 4, wherein the Ri, R2, and R3 are each independently a hydrogen atom. t "
6. The polysiloxane according to any one of claims 1 to 5, wherein the polysiloxane only comprises the molecular structure segment shown by formula 1 and the Q is formed by a molecular structure segment shown by formula 2. :: ■

8. The polysiloxane according to any one of claims 1 to 5, further comprising at least one segment
selected from a molecular structure shown by formula 3 at a molar content of 1 to 99%,

Formula 3
wherein in formula 3, XI is an alkyl having less than 8 carbon atoms, or an aryl having less than 10 carbon atoms; and Yl is a hydroxyl, an aryl having less than 10 carbon atoms, or an alkyl having less than 8 carbon atoms.
9. The polysiloxane according to claim 8, wherein a molar content of the molecular structure
segment shown by formula 3 is 1 to 50%.
10. The polysiloxane according to any one of claims 8 to 9, wherein the Yl is a hydroxyl.
11. The polysiloxane according to any one of claims 1 to 10, wherein the T is a hydroxyl, an alkyl
having less than 8 carbon atoms, or a structure shown by formula 4,
HO OH
•~Z R6 R5 Formula 4
wherein in formula 4, Z is an alkyl having less than 7 carbon atoms, or an alkyl having less than 7 non-hydrogen atoms in the main chain and containing a heteroatom; R4, R5, and R6 are each independently a hydrogen atom, or a substituent having less than 3 carbon atoms, or the R5 binds to a carbon atom on the Z to form a cyclic substituent.
12. The polysiloxane according to claim 11, wherein the Z is an alkyl having less than 7 non-hydrogen atoms in the main chain and containing a heteroatom.
13. The polysiloxane according to any one of claims 1 to 12, wherein the T is a hydroxyl.
14. The polysiloxane according to any one of claims 1 to 13, wherein the polysiloxane is free of an epoxyethane structure.
15. The polysiloxane according to any one of claims 1 to 14, wherein the polysiloxane has a weight average molecular weight of 500 to 50,000. ,, _ 11

16. The polysiloxane according to claim 15, wherein the polysiloxane has a weight average molecular weight of 1,000 to 11,000.
17. The polysiloxane according to claim 16, wherein the polysiloxane has a weight average molecular weight of 1,500 to 5,500. - .
18. A material for solar energy and a semiconductor, comprising the polysiloxane according to any one of claims 1 to 17. - '' ''"".-
19. The material for solar energy and a semiconductor according to claim 18, further comprising:
a dopant component A, ' ' ' ■
a polymer binder B, and
a solvent C. ■
20. The material for solar energy and a semiconductor according to claim 19, wherein the dopant component A is an n-type dopant component of a compound containing an element of a 5th main group, or a p-type dopant component of a compound containing an element of a 3rd main group.
21. The material for solar energy and a semiconductor according to claim 20, wherein the dopant . component A contains an inorganic boron compound component, or an inorganic phosphorus compound component.
22. The material for solar energy and a semiconductor according to claim 19, wherein a molecular structure repeating unit of the polymer binder B contains an alcoholic hydroxyl.
23. The material for solar energy and a semiconductor according to claim 22, wherein the polymer binder B has a weight average molecular weight in a range of 1,000 to 300,000.
24. The material for solar energy and a semiconductor according to claim 19, wherein the solvent
C comprises 0 to 50% water and 50 to 100% organic solvent.
11 i i i
25. The material for solar energy and a semiconductor according to claim 24, wherein the solvent
C is an organic solvent having a boiling point of 50 to 300°C.
11
26. The material for solar energy and a semiconductor according to claim 19, wherein a total addition amount of the dopant component A, the polymer binder B, the polysiloxane, and the solvent C is 2 to 30% relative to a total mass of a slurry.
27. A method for manufacturing a semiconductor unit of a semiconductor substrate, comprising following steps a to c,

a. coating the material according to any one of claims 19 to 26 on one side of each
semiconductor substrate as a first conductive type impurity diffusion composition, to form a first
conductive type impurity diffusion composition film,
b. heating the semiconductor substrate on which the first conductive type impurity |
diffusion composition film obtained in the step a is formed, to enable the first conductive type
impurity contained in the dopant component A of the material to diffuse into the semiconductor substrate, to form a first conductive type impurity diffusion layer, and
c. heating the semiconductor substrate in an atmosphere of a gas containing a second
conductive type impurity, to enable the second conductive type impurity to diffuse into the
semiconductor substrate, to form a second conductive type impurity diffusion layer,
wherein in the step b and the step c, respective sides on which the first conductive type j
impurity diffusion composition films of the semiconductor substrates with two pieces in each group are formed are oppositely placed.
28. The method for manufacturing a semiconductor unit according to claim 27, wherein the step
c is carried out using a thermal processing product of the first conductive type impurity diffusion
composition film as a mask after the step b.
I
29. The method for manufacturing a semiconductor unit according to claim 27, wherein the step c is carried out after the step b and in succession to the step b.
30. The method for manufacturing a semiconductor unit according to claim 27, wherein in the step c, a heating temperature when forming the second conductive type impurity diffusion layer is 50 to 200°C lower than a temperature when forming the first conductive type impurity diffusion layer in the step b.
M
i
31. The method for manufacturing a semiconductor unit according to claim 27, further i comprising a step d: oxidizing surface of the semiconductor substrate in an oxygen-containing atmosphere.
32. The method for manufacturing a semiconductor unit according to claim 31, wherein the step d is carried out after the step c. and in succession to the step c.

33. The method for manufacturing a semiconductor unit according to claim 27, wherein in the step b and the step c, for a plurality of groups of the semiconductor substrates with two pieces in each group, a distance between sides on which the first conductive type impurity diffusion composition films in each group are formed is Wl, a distance between sides opposite to the sides on which the first conductive type impurity diffusion composition films in adjacent two groups are formed is W2, and Wl and W2 satisfy Wl < W2. ,,
34. The method for manufacturing a semiconductor unit according to claim 33, wherein in configurations of a plurality of pieces of the semiconductor substrates in the step b and the step c, the distance between sides on which the first conductive type impurity diffusion composition films of the semiconductor substrates with two pieces in each group are formed is 0 mm.
.ii '
35. The method for manufacturing a semiconductor unit according to claim 27, wherein the step
b is carried out in an oxygen-containing atmosphere.
36. The method for manufacturing a semiconductor unit according to claim 35, wherein a ratio of nitrogen to oxygen in the atmosphere in the step b is identical to a ratio of nitrogen to oxygen in an atmosphere in the step c.
37. The method for manufacturing a semiconductor unit according to claim 27, wherein the first conductive type is a p-type, and the second conductive type is an n-type.
38. A solar cell prepared by the method for manufacturing a semiconductor unit according to any one of claims 27 to 37.