1. A power conversion apparatus comprising:
a power conversion circuit that is constituted by a semiconductor module including a power semiconductor element to perform a switching operation, the power conversion circuit including a positive-side terminal and a negative-side terminal;
a capacitor that includes a positive-side terminal and a negative-side terminal;
a wire member that includes a positive-side connection wire member connecting the positive-side terminal of the power conversion circuit to the positive-side terminal of the capacitor, and a negative-side connection wire member connecting the negative-side terminal of the power conversion circuit to the negative-side terminal of the capacitor; and
a switching-current shunt component that is connected in parallel to at least one of the positive-side connection wire member and the negative-side connection wire member of the wire member, a portion of a switching current being shunted to the switching-current shunt component.
2. A power conversion apparatus comprising:
a power conversion circuit that is constituted by a semiconductor module including a power semiconductor element to perform a switching operation;
a wire member through which a switching current flows, the switching current being generated when the power semiconductor element performs the switching operation; and
a switching-current shunt component that is connected in parallel to the wire member, a portion of the switching current being shunted to the switching-current shunt component, wherein

two connection points at which the switching-current shunt component is connected to the wire member have substantially a same potential in a state in which the power semiconductor element does not perform the switching operation.
3. The power conversion apparatus according to claim 1 or
2, wherein
the wire member is constituted by a busbar, the busbar is connected to a positive-side terminal and a negative-side terminal of the power conversion circuit, and to a positive-side terminal and a negative-side terminal of the capacitor, and
the switching-current shunt component is connected to the busbar.
4. The power conversion apparatus according to claim 3, wherein one end of the switching-current shunt component is connected to an immediate vicinity of a connection point between the busbar and the power conversion circuit.
5. The power conversion apparatus according to claim 3, wherein an opposite end of the switching-current shunt component is connected to an immediate vicinity of a connection point between the busbar and the capacitor.
6. The power conversion apparatus according to any one of claims 3 to 5, wherein
the busbar includes a flat portion and a bent portion, and
the switching-current shunt component is connected to the busbar so as to bridge the bent portion of the busbar.

7. The power conversion apparatus according to any one of
claims 1 to 6, wherein
a positive-side terminal of the power conversion circuit is a terminal of the semiconductor module, and
the wire member is connected to the terminal of the semiconductor module.
8. The power conversion apparatus according to any one of
claims 1 to 7, wherein
a negative-side terminal of the power conversion circuit is a terminal of the semiconductor module, and
the wire member is connected to the terminal of the semiconductor module.
9. The power conversion apparatus according to any one of
claims 1 to 8, wherein the power conversion apparatus
converts DC power to AC power, or converts AC power to DC
power, and wherein
the power semiconductor element includes a positive-side switching element, and a negative-side switching element connected in series to the positive-side switching element,
the power conversion apparatus further comprises an AC-side connection wire member to connect the positive-side switching element and the negative-side switching element, and
the switching-current shunt component is also connected in parallel to the AC-side connection wire member
10. The power conversion apparatus according to any one of
claims 1 to 9, wherein
the power conversion circuit is a three-level power conversion circuit including a positive-side terminal, a

negative-side terminal, and an intermediate terminal, the capacitor includes an intermediate terminal, the power conversion apparatus comprises an
intermediate-point connection wire member to connect the > intermediate terminal of the power conversion circuit to
the intermediate terminal of the capacitor, and
the switching-current shunt component is also
connected in parallel to the intermediate-point connection
wire member. )
11. The power conversion apparatus according to claim 10,
wherein
the intermediate terminal of the power conversion circuit is a terminal of the semiconductor module, and i the intermediate-point connection wire member is connected to the terminal of the semiconductor module.
12. The power conversion apparatus according to any one of claims 1 to 11, wherein the wire member to which the switching-current shunt component is connected in parallel is plural in number.
13. The power conversion apparatus according to any one of claims 1 to 12, wherein connection points between the switching-current shunt component and a wire through which the switching current flows include a connection point on a side of a terminal of the power semiconductor element, and a distance between the connection point on the side of the terminal of the power semiconductor element and the terminal is equal to or less than a distance between the terminal and a terminal of the power semiconductor element forming a pair with the terminal.

14. The power conversion apparatus according to any one of claims 1 to 13, wherein connection points between the switching-current shunt component and a wire through which the switching current flows include a connection point on a side of a terminal of the capacitor, and a distance between the connection point on the side of the terminal of the capacitor and the terminal is equal to or less than a distance between the terminal and a terminal of the capacitor forming a pair with the terminal.
15. The power conversion apparatus according to any one of claims 1 to 14, wherein
a first switching-current shunt component through which a first switching current flows, and a second switching-current shunt component through which a second switching current flows, are provided as the switching-current shunt component, and
a direction of flow of the first switching current that flows through the first switching-current shunt component, and a direction of flow of the second switching current that flows through the second switching-current shunt component, are opposite to each other.
16. The power conversion apparatus according to any one of
claims 1 to 15, wherein a distance between the first
switching-current shunt component and the second switching-
current shunt component is equal to or less than a shorter
one of: a distance between two connection points between
the first switching-current shunt component and a wire
through which a switching current flows; and a distance
between two connection points between the second switching-
current shunt component and a wire through which a
switching current flows.

17. The power conversion apparatus according to any one of claims 1 to 16, wherein the switching-current shunt component is a diode.
18. The power conversion apparatus according to any one of claims 1 to 16, wherein the switching-current shunt component is an inductor and a capacitor that are connected in series.
19. The power conversion apparatus according to claim 18, wherein an oscillation frequency of the switching current is included within a half bandwidth of an LC resonance frequency determined by the inductor and the capacitor.
2 0. The power conversion apparatus according to claim 18 or 19, wherein the inductor is constituted by a parasitic inductance of a wire of a switching-current shunt component
21. The power conversion apparatus according to any one of claims 1 to 20, wherein the power semiconductor element is a wide bandgap semiconductor element.
22. The power conversion apparatus according to claim 21, wherein the wide bandgap semiconductor element is a semiconductor element formed of silicon carbide, a gallium nitride-based material, or diamond.
23. A power semiconductor module comprising:
a power semiconductor element to perform a switching operation;
a wire member that is connected to the power semiconductor element; and

a switching-current shunt component that is connected in parallel to the wire member, wherein
two connection points at which the switching-current shunt component is connected to the wire member have substantially a same potential in a state in which the power semiconductor element does not perform the switching operation.