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“Radiation Detector And Radiation Detection Method”

Abstract: The present invention provides a radiation detector with high detection sensitivity. The radiation detector according to the present invention includes an Al2O3 substrate, an Fe2O3 thin film laminated on the Al2O3 substrate, a CaxCoO2 (here, 0.15 < x < 0.55) thin film that is layered on the Fe2O3 thin film and that has CoO2 planes that are aligned inclined to the surface of the Al2O3 substrate, a first electrode disposed on the CaxCoO2 thin film, and a second electrode disposed on the CaxCoO2 thin film in a position opposed to the first electrode in the direction in which the CoO2 planes are aligned inclined.

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Patent Information

Application #
Filing Date
26 August 2010
Publication Number
12/2011
Publication Type
INA
Invention Field
PHYSICS
Status
Email
Parent Application

Applicants

PANASONIC CORPORATION
1006  Oaza Kadoma  Kadoma-shi  Osaka 571-8501  Japan

Inventors

1. TAKAHASHI  Kohei
c/o Panasonic Corporation  1006  Oaza Kadoma  Kadoma-shi  Osaka 571-8501  Japan
2. KANNO  Tsutomu
c/o Panasonic Corporation  1006  Oaza Kadoma  Kadoma-shi  Osaka 571-8501  Japan
3. SAKAI  Akihiro
c/o Panasonic Corporation  1006  Oaza Kadoma  Kadoma-shi  Osaka 571-8501  Japan
4. ADACHI  Hideaki
c/o Panasonic Corporation  1006  Oaza Kadoma  Kadoma-shi  Osaka 571-8501  Japan

Specification

FORM 2 THE PATENTS ACT, 1970 (39 of 1970) & THE PATENTS RULES, 2003 COMPLETE SPECIFICATION (See section 10, rule 13) “RADIATION DETECTOR AND RADIATION DETECTION METHOD” PANASONIC CORPORATION, a Japanese Corporation of 1006, Oaza Kadoma, Kadoma-shi, Osaka 571-8501, Japan The following specification particularly describes the invention and the manner in which it is to be performed. DESCEIPTION RADIATION DETECTOR AND RADIATION DETECTION METHOD Technical Field [0001] The present invention relates to a radiation detector that utilizes an anisotropic thermoelectric effect and a radiation detection method using the same. Background Art [0002] When a temperature difference is generated between both ends of a thermoelectric conversion material, an electromotive force (a thermal electromotive force) is generated in proportion to the temperature difference. The phenomenon that thermal energy is converted into electrical energy in a thermoelectric conversion material is known as the Seebeck effect. The electromotive force V that is generated is expressed as V=SΔT, where AT is a temperature difference and S is the Seebeck coefficient pecuhar to the material. [0003] In a thermoelectric conversion material that exhibits isotropic physical properties, the electromotive force generated by the Seebeck effect is generated only in the direction in which the temperature difference has been generated. On the other hand, due to the inclined arrangement of the crystal axes, the thermoelectric conversion material that exhibits anisotropy in its electrical transport properties generates an electromotive force in the direction orthogonal to the direction in which the temperature difference has been generated. The electrical transport properties denote the behavior of electrons and positive holes having electric charges that move in a substance. As described above, the phenomenon that due to the inclined arrangement of the crystal axes of the material, an electromotive force is generated in the direction that is different from the direction in which the temperature difference has been generated (a heat flow direction) is referred to as an anisotropic thermoelectric effect or an off-diagonal thermoelectric effect. [0004] FIG. 13 is a diagram of a coordinate system for explaining the anisotropic thermoelectric effect. As shown in FIG. 13, the crystal axes abc of the sample 101 are inclined to the spatial axes xyz. In the sample 101, when a temperature difference ATz is applied in the direction along the z axis, an electromotive force Vx is generated in the direction orthogonal to the z axis, i.e. the direction along the x axis. The electromotive force Vx is represented by Formula (l): [Mathematical Formula 1] Vx =l/2dΔTz • ΔT• ΔS • sm2a (1) where 1 denotes the width of the sample 101, d denotes the thickness of the sample 101, a denotes the inchnation angle of the a-b plane to the surface (the x-y plane) of the sample 101, and AS denotes the difference (the difference that occurs due to anisotropy) between the Seebeck coefficient Sc in the c-axis direction and the Seebeck coefficient Sab in the a-b in-plane direction. [0005] Conventionally, a radiation detector using an inclined layered thin film of YBa2Cu307-d (hereinafter referred to as "YBCO") has been proposed as a radiation detector that utilizes the anisotropic thermoelectric effect (see, for example, Patent Literature l). The inclined layered thin film denotes a thin film that is layered on a substrate and that has a structure in which the crystal axis is inclined to the surface of the substrate and a plurality of layers are layered together. The YBCO thin film has an anisotropic crystal structure in which a CuO2 layer having electrical conductivity and Y and BaO layers that have insulation properties are layered alternately along the c"axis direction. When the YBCO thin film is layered (inclined and layered) on a suitable substrate surface in such a manner that the c axis is inchned to the substrate surface, a similar system to that shown in FIG. 13 is formed. The CuO2 plane corresponds to the a-b plane shown in FIG. 13. When an electromagnetic wave is incident on the surface of the YBCO thin film that has been inchned and layered as described above, a temperature difference is generated in the direction perpendicular to the surface of the YBCO thin film. As a result, an electromotive force is generated in the direction parallel to the surface of the YBCO thin film by the anisotropic thermoelectric effect. Reading this electromotive force allows the electromagnetic wave that has been incident on the surface of the YBCO thin film to be detected. A radiation detector using the YBCO thin film can detect an electromagnetic wave at a sensitivity of approximately 100 mV/K. [0006] From Formula (l), the electromotive force Vx that is generated by the anisotropic thermoelectric effect is proportional to the difference AS that occurs due to anisotropy of the Seebeck coefficient, the aspect ratio 1/d of a sample, and a sine value of sin2a of an angle that is twice the inclination angle a. In the YBCO thin film, the difference AS is smaller than 10 pV/K, and the upper limit for maintaining the inclination angle a of the CuO2 plane at a single angle is limited to approximately 10 to 20° (see, for example, Non-Patent Literature 1 and Non-Patent Literature 2). Accordingly, the radiation detector that includes the YBCO thin film used therein cannot be said to have sufficiently high sensitivity for being used practically. In order to improve the sensitivity of a radiation detector that includes an inclined layered thin film used therein, there are methods in which, for example, a material with a larger difference AS is used and the inclination angle a of the thin film is brought close to 45 degrees as much as possible. Since the range of the inclination angle a in the inclined layered thin film depends on the combination of the thin film material and the substrate material on which the thin film material is layered, it is preferable that a suitable substrate material be selected so that the inclination angle a can be controlled widely up to around 45°. [0007] Patent Literature 1 discloses a radiation detector in which a YBCO thin film partially doped with Pr is used. According to Patent Literature 1, the radiation detector has a sensitivity approximately twenty times higher than that of a radiation detector with a non-doped YBCO thin film used therein. It is suggested that the reason for this is because the Seebeck coefficient of the YBCO thin film is increased by Pr doping. However, Non-Patent Literature 3 describes that in a Pr-doped YBCO thin film, the Seebeck coefficient increases in the direction of the a"b in"plane but remains unchanged in the c-axis direction. Furthermore, Non-Patent Literature 3 describes that the difference AS becomes smaller in the Pr doping range that is employed in the YBCO thin film used for the radiation detector of Patent Literature 1. Therefore, using light with a wavelength (308 nm) that was different from light with a wavelength of 248 nm used in Patent Literature 1, the response of the Pr-doped YBCO thin film to light irradiation was actually measured by the same experimental method as in Non-Patent Literature 3. As a result, it was confirmed that the Pr-doped YBCO thin film had a smaller electromotive force that was generated by the anisotropic thermoelectric effect. [0008] The improvement in sensitivity of the radiation detector with the Prdoped YBCO thin film used therein is probably attributed to an increase in absorption coefficient of the YBCO thin film with respect to light with a wavelength of 248 nm due to Pr doping. That is, although the radiation detector of Patent Literature 1 is highly sensitive to light with a wavelength of 248 nm, it cannot be said that the detection sensitivity is improved in other wavelength ranges. [Prior Art Literature] [Patent Literature] [0009] [Patent Literature 1] JP 8-247851A [Non-Patent Literature] [0010] [Non-Patent Literature l] H. S. Kwok, J. P. Zheng, "Anomalous photovoltaic response in YBa2Cu3O7", The American Physical Society, PHYSICAL REVIEW B, (1992), VOLUME 46, NUMBER 6, 3692 [Non-Patent Literature 2] Physica C 377 (2002) 26-35, Elsevier Science B. V [Non-Patent Literature 3] 15th International Conference on Thermoelectrics (1996), IEEE, pp. 494-498 Disclosure of Invention [0011] The present invention is made with the above situation in mind and is intended to provide a radiation detector and radiation detection method with higher detection sensitivity. [0012] The present inventors made various studies and found that the above-mentioned object was achieved by the following present invention. That is, a radiation detector of the present invention includes an Al2O3 substrate, a Fe2O3 thin film layered on the Al2O3 substrate, a CaxCoO2 (where 0.15

Documents

Application Documents

# Name Date
1 1815-MUMNP-2010- ACKNOWLEDGEMENT RECEIPT.pdf 2022-12-05
1 1815-MUMNP-2010- FORM 5 (26-08-2010).pdf 2010-08-26
2 1815-MUMNP-2010- VERIFICATION OF TRANSLATION CERTIFICATE.pdf 2022-12-05
2 1815-MUMNP-2010- FORM 3 (26-08-2010).pdf 2010-08-26
3 1815-MUMNP-2010- WO- PCT DOCUMENTS.pdf 2022-12-05
3 1815-MUMNP-2010- FORM 2 (26-08-2010).pdf 2010-08-26
4 1815-MUMNP-2010-AbandonedLetter.pdf 2018-10-31
4 1815-MUMNP-2010- FORM 1 (26-08-2010).pdf 2010-08-26
5 1815-MUMNP-2010- CORRESPONDENCE (26-08-2010).pdf 2010-08-26
6 1815-MUMNP-2010- CORRESPONDENCE (08-09-2010).pdf 2010-09-08
7 Form-5.pdf 2018-08-10
7 1815-MUMNP-2010-CORRESPONDENCE (28-8-2012).pdf 2018-08-10
8 Form-3.pdf 2018-08-10
8 1815-MUMNP-2010-CORRESPONDENCE(10-2-2011).pdf 2018-08-10
9 Form-1.pdf 2018-08-10
9 1815-MUMNP-2010-CORRESPONDENCE(28-8-2012).pdf 2018-08-10
10 1815-MUMNP-2010-FER.pdf 2018-08-10
10 Drawings.pdf 2018-08-10
11 1815-MUMNP-2010-FORM 1(10-2-2011).pdf 2018-08-10
11 abstract1.jpg 2018-08-10
12 1815-MUMNP-2010-FORM 1(28-8-2012).pdf 2018-08-10
12 1815-MUMNP-2010-FORM 3(10-2-2011).pdf 2018-08-10
13 1815-MUMNP-2010-FORM 13(28-8-2012).pdf 2018-08-10
13 1815-MUMNP-2010-FORM 26(10-2-2011).pdf 2018-08-10
14 1815-MUMNP-2010-FORM 18(28-8-2012).pdf 2018-08-10
15 1815-MUMNP-2010-FORM 18(28-8-2012).pdf 2018-08-10
16 1815-MUMNP-2010-FORM 13(28-8-2012).pdf 2018-08-10
16 1815-MUMNP-2010-FORM 26(10-2-2011).pdf 2018-08-10
17 1815-MUMNP-2010-FORM 3(10-2-2011).pdf 2018-08-10
17 1815-MUMNP-2010-FORM 1(28-8-2012).pdf 2018-08-10
18 1815-MUMNP-2010-FORM 1(10-2-2011).pdf 2018-08-10
18 abstract1.jpg 2018-08-10
19 1815-MUMNP-2010-FER.pdf 2018-08-10
19 Drawings.pdf 2018-08-10
20 1815-MUMNP-2010-CORRESPONDENCE(28-8-2012).pdf 2018-08-10
20 Form-1.pdf 2018-08-10
21 1815-MUMNP-2010-CORRESPONDENCE(10-2-2011).pdf 2018-08-10
21 Form-3.pdf 2018-08-10
22 1815-MUMNP-2010-CORRESPONDENCE (28-8-2012).pdf 2018-08-10
22 Form-5.pdf 2018-08-10
23 1815-MUMNP-2010- CORRESPONDENCE (08-09-2010).pdf 2010-09-08
24 1815-MUMNP-2010- CORRESPONDENCE (26-08-2010).pdf 2010-08-26
25 1815-MUMNP-2010-AbandonedLetter.pdf 2018-10-31
25 1815-MUMNP-2010- FORM 1 (26-08-2010).pdf 2010-08-26
26 1815-MUMNP-2010- WO- PCT DOCUMENTS.pdf 2022-12-05
26 1815-MUMNP-2010- FORM 2 (26-08-2010).pdf 2010-08-26
27 1815-MUMNP-2010- VERIFICATION OF TRANSLATION CERTIFICATE.pdf 2022-12-05
27 1815-MUMNP-2010- FORM 3 (26-08-2010).pdf 2010-08-26
28 1815-MUMNP-2010- FORM 5 (26-08-2010).pdf 2010-08-26
28 1815-MUMNP-2010- ACKNOWLEDGEMENT RECEIPT.pdf 2022-12-05

Search Strategy

1 Searchqueryandstrategyfor1815MUMNP2010_22-06-2017.pdf