WE CLAIM:
1. A resin composition comprising:
(A) a polyimide resin containing 60 mOl% or more of a diamine residue having a structure represented by General Formula (1) below in all diamine residues;
(B) a thermosetting resin; and
(C) a thermally conductive filler,
wherein
the resin composition contains 60 parts' by volume or more of the thermally conductive filler (C) in 100 parts by volume of a total of the polyimide resin (A), the thermosetting resin (B), and the thermally conductive filler (C) :' [Chemical Formula 1]

R^

W

/'

R5-

Si —O

Si—Re-

d)

in

R3

R4

wherein R1 to R4 may each be same or different and represent an alkyl group having 1 to 30 carbon atoms, a phenyl group, or a phenoxy group, and the phenyl group and the phenoxy group may be substituted with an alkyl group
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having 1 to 30 carbon atoms; m Rxs and R3s may each be same or different; R5 and R6 may each be same or different and represent an alkylene group having 1 to 30 carbon atoms or an arylene group, and the arylene group may be substituted with an alkyl group having 1 to 30 carbon atoms; and m represents a range of 10 or more.
2. The resin composition according to claim 1, wherein the thermosetting resin (B) has a group selected from an epoxy group, an isocyanate group, and a methylol group.
3. The resin composition according to claim 2, wherein the thermosetting resin (B) is an epoxy resin having a siloxane skeleton.
4. The resin composition according to claim 2, wherein the thermosetting resin (B) is an epoxy resin having a triazine skeleton.
5. The resin composition according to any one of claims 1 to 4, wherein the resin composition contains 0.1"to 15 parts by weight of the thermosetting resin (B) relative to 100 parts by weight of the polyimide resin (A).
6. '• A power semiconductor device comprising:
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a heat sink; and
a power semiconductor module,
wherein
a sheet including a cured product of the resin composition according to any one of claims 1 to 5 is provided between the heat sink and the power semiconductor module.
7. A sheet comprising a cured product of the resin composition according to any one of claims 1 to 5.
8. The sheet according to claim 7, having a thickness of 100 to 400 urn.
9. A laminate comprising:
a base material selected from a metal substrate and a ceramic substrate; and
the sheet according to claim 7 laminated on the base
material.
10. A laminate comprising:
a heating element; and
the sheet according to claim 7 laminated on the heating element.
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11. A plasma processing apparatus comprising:
a plasma source;
a mounting table having a temperature regulation mechanism; and ■
a temperature control plate, . wherein
the sheet according to claim 7 is provided between the mounting table having a temperature regulation mechanism and the temperature control plate.
12. The plasma processing apparatus according to claim 11,
wherein the temperature control plate is a focus ring.
13. A method of producing a semiconductor, comprising the
step of performing dry etching using the plasma processing
apparatus according to claim 11 or 12.
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