DESCRIPTION
[Title of Invention]
SEMICONDUCTOR DEVICE USING CLOSE PROXIMITY WIRELESS
COMMUNICATION
[Technical Field]
[0001]
The present invention relates to a technology for setting an operation mode
and the like of a semiconductor device by using close proximity wireless
communication.
[Background Art]
[0002]
In semiconductor devices, of which a large scale integrated circuit (LSI) is
representative, the setting of the internal operation mode is changed depending on
circumstances. For example, a semiconductor device is set to the test mode while an
operation test of the semiconductor device is conducted before shipping (Patent
Literature 1). In addition, an operation mode may be set when a semiconductor
device is shipped according to a memory or an input/output device of a household
electrical appliance and the like on which the semiconductor device will be mounted.
Also, in order to support different types of household electrical appliances, the
semiconductor device may be provided with different operation modes.
[0003]
Generally, the setting described above is performed via an external
connection terminal of the semiconductor device changes. For example, the
semiconductor device includes a dedicated terminal for setting the test mode. In
order to set the semiconductor device to the test mode, a high (H) level voltage or a
low (L) level voltage is applied to the dedicated terminal. In this way, the
semiconductor device is set to the test mode.
[Citation List]
[Patent Literature]
[0004]
[Patent Literature 1]
Japanese Patent Application Publication No. 2007-171060
[Patent Literature 2]
Japanese Patent No. 4131544
[Summary of Invention]
[Technical Problem]
[0005]
In recent years, as the number of functions of a semiconductor device is
increasing, the number of necessary terminals is increasing. On the other hand, as an
advance in semiconductor miniaturization is made, the size of a package is
decreasing, and accordingly the number of terminals that can be provided on the
semiconductor device is decreasing. Consequently, there is a problem in that it is
becoming difficult to provide a dedicated terminal for the mode setting.
[0006]
The present invention aims to provide a semiconductor device that is able to
change the setting of the internal operation mode without increasing the number of
terminals of the semiconductor device.
[Solution to Problem]
[0007]
In order to solve the above problem, the present invention provides a
semiconductor device comprising: a semiconductor chip including a transmitting
cell, a receiving cell, a first antenna connected to the transmitting cell, and a second
antenna connected to the receiving cell; and a conductor disposed close to the first
antenna and the second antenna, wherein the transmitting cell and the receiving cell
communicate with each other using close proximity wireless communication.
[Advantageous Effects of Invention]
[0008]
The above structure has the advantageous effect of changing the setting of
the internal operation mode without increasing the number of terminals of the
semiconductor device.
[Brief Description of Drawings]
[0009]
Fig. 1 is a perspective view showing the appearance of a semiconductor
device 100a pertaining to Embodiment 1.
Fig. 2 is an exploded view of the semiconductor device 100a.
Fig. 3 is a cross-sectional view of the semiconductor device 100a.
Fig. 4 is a block diagram showing a structure of a semiconductor chip 120
of the semiconductor device 100a.
Fig. 5 shows relation between the positions of conductors 111a, 111b and
111c on a propagation plate 101a and connection paths of transmitting antennas and
receiving antennas of the semiconductor chip 120.
Fig. 6 shows relation between the positions of conductors 111d and 111e on
a propagation plate 101b and connection paths of transmitting antennas and
receiving antennas of the semiconductor chip 120.
Fig. 7 shows relation between the positions of conductors 111f and 111g on
a propagation plate 101c and connection paths of transmitting antennas and
receiving antennas of the semiconductor chip 120.
Fig. 8 shows relation between the positions of conductors on the
propagation plate 101a and another device mounted on a circuit substrate 10a.
Fig. 9 shows relation between the positions of conductors on the
propagation plate 101b and another device mounted on a circuit substrate 10b.
Fig. 10 shows relation between the positions of conductors on the
propagation plate 101c and another device mounted on a circuit substrate 10c.
Fig. 11 is an exploded view showing a semiconductor device 100d
pertaining to Embodiment 2.
Fig. 12 is a cross-sectional view of the semiconductor device 100d.
Fig. 13 is a block diagram showing a structure of a semiconductor chip of
the semiconductor device as a modification.
[Description of Embodiments]
[0010]
1. Embodiment 1
A semiconductor device 100a as one embodiment pertaining to the present
invention is described below.
[0011]
1.1 Semiconductor Device 100a
As shown in Fig. 1, the semiconductor device 100a is mounted on a circuit
substrate 10a along with other unillustrated electronic components. As shown in Fig.
2, the semiconductor device 100a is composed of a sheet-like propagation plate 101a,
a semiconductor chip 120, and apackage 150. The propagation plate 101a adheres to
the upper surface of the semiconductor chip 120. The package 150 surrounds the
semiconductor chip 120 to provide protection.
[0012]
As shown in Figs. 2 and 3, a plurality of bonding pads (electrodes) 151 are
provided on the upper surface of the semiconductor chip 120 along the four sides
thereof in a square shape. The plurality of bonding pads 151 are connected to a
plurality of leads 152 via a plurality of bonding wires 153. Each lead 152 extends in
contact with the upper surface of the package 150, and is bent downward at the end
of the upper surface to extend in contact with the side surface of the package 150.
The plurality of leads 152 connect the semiconductor chip 120 and the circuit
substrate 10a.
[0013]
As shown in Figs. 2 and 3, on the upper surface of the semiconductor chip
120, transmitting antennas 121a, 121b and 121c, receiving antennas 122a, 122b and
122c, and transmitting antennas 12Id, 121 e, and 121f are provided in a matrix
within the square shape formed by the plurality of bonding pads 151. The
transmitting antennas 121a, 121b and 121c, the receiving antennas 122a, 122b and
122c, and the transmitting antennas 121 d, 12 le, and 121f are formed inside the
semiconductor chip 120 so that the upper part of each antenna is exposed outside of
the upper surface of the semiconductor chip 120.
[0014]
Note that the cross section shown in Fig. 3 only shows the transmitting
antennas 121a and 12Id and the receiving antenna 122a that are formed inside the
semiconductor chip 120, and other components inside the semiconductor chip 120
are omitted.
[0015]
1.2 Propagation plate 101a
As shown in Figs. 2 and 3, the propagation plate 101a is a sheet-like
(plate-like) signal propagating plate made of a cellophane film, for example, and
adheres to the upper surface of the semiconductor chip 120 with an acrylic adhesive
within the square shape formed by the plurality of bonding pads 151. On the upper
surface of the propagati on plate 101a, conductors 111a, 111b and 111 c are provided.
The conductors 111a, 111b and 111c are made of Cu, for example, and are band-like
conductive foils.
[0016]
Before the propagation plate 101a adheres to the upper surface of the
semiconductor chip 120, the conductors 111a, 111b and 111c have adhered to the
upper part of the propagation plate 101a so that one end 11lax of the conductor
111a is close to the transmitting antenna 121a, the other end 111ay of the conductor
111a is close to the receiving antenna 122a, one end 111bx of the conductor 111b is
close to the transmitting antenna 121b, the other end 111by of the conductor 111b is
close to the receiving antenna 122b, one end 111ex of the conductor 111c is close to
the receiving antenna 122c, and the other end 111ey of the conductor 111c is close
to the transmitting antenna 121f.
[0017]
The distance between the lower surface of each conductor and the upper
surface of the semiconductor chip 120 is equal to or less than 1 mm.
[0018]
Before the propagation plate 101a adheres to the upper surface of the
semiconductor chip 120, there is no restriction on the positioning of the conductors
on the propagation plate 101a, and the conductors may be provided in any manner.
However, if both a transmitting antenna of the semiconductor chip 120 and a
receiving antenna of the semiconductor chip 120 are not positioned right under each
conductor, data cannot be transmitted from the transmitting antenna to the receiving
antenna.
[0019]
In addition, the number of transmitting antennas that can be positioned right
under one conductor is only one. This is because if electrical signals from two or
more transmitting antennas pass through the conductor, the electrical signals collide
with each other and normal communication cannot be performed. In contrast, there
is no logical restriction on the number of receiving antennas that can be positioned
right under the conductor. Two or more receiving antennas may be provided right
under the conductor. When two or more receiving antennas are positioned right
under one conductor, each of the two or more receiving antennas can receive an
electrical signal corresponding to a signal transmitted from one transmitting antenna.
[0020]
Figs. 6 and 7 show examples of propagation plates other than the
propagation plate 101a.
[0021]
A propagation plate 101b shown in Fig. 6 differs from the propagation plate
101a only in the number, shapes, and positioning of conductors provided thereon.
On the upper surface of the propagation plate 101b, conductors 111d and 111e are
provided. The conductors 111d and 111e are made of Cu, for example, and are
band-like conductive foils like the conductor 111a and so on. The conductor 111d
has a shape of a bent band, and the conductor 111e is rectangular like the conductor
111a and so on.
[0022]
Before the propagation plate 101b adheres to the upper surface of the
semiconductor chip 120, the conductors 111d and 111e have adhered to the upper
surface of the propagation plate 101b so that one end 111dx of the conductor 111d is
close to the transmitting antenna 121a, a central part 111dy (a part that is bent in the
middle) of the conductor 111d is close to the receiving antenna 122b, the other end
111dz of the conductor 111d is close to the receiving antenna 122c, one end 111ex
of the conductor 111e is close to the receiving antenna 122a, and the other end
11 ley of the conductor 111e is close to the transmitting antenna 121f.
[0023]
A propagation plate 101c shown in Fig. 7 differs from the propagation plate
101a only in the number and positioning of conductors provided thereon. On the
upper surface of the propagation plate 101c, conductors 111 f and 111 g are provided.
The conductors 111f and 111g are made of Cu, for example, and are band-like
conductive foils like the conductor 111a and so on.
[0024]
Before the propagation plate 101c adheres to the upper surface of the
semiconductor chip 120, the conductors 111f and 111g have adhered to the upper
surface of the propagation plate 101 c so that one end 111 fx of the conductor 111 f is
close to the transmitting antenna 121b, the other end 111fy of the conductor 111f is
close to the receiving antenna 122a, one end 111gx of the conductor 111g is close to
the receiving antenna 122b, and the other end 111gy of the conductor 111g is close
to the transmitting antenna 121f.
[0025]
1.3 Semiconductor chip 120
As shown in Fig. 4, the semiconductor chip 120 is composed of the
transmitting antennas 121a, 121b, 121c, 121d, 121e and 121f, transmitting cells
123a, 123b, 123c, 123d, 123e and 123f, generating cells 125a, 125b, 125c, 125d,
125e and 125f, the receiving antennas 122a, 122b and 122c, receiving cells 124a,
124b and 124c, a first storage cell 126, a second storage cell 127, a third storage cell
128, an interface cell 130 and a logical block 131. These are formed inside the
semiconductor chip 120 with use of a process technology of a semiconductor.
[0026]
(1) Transmitting Antenna and Receiving Antenna
The transmitting antenna 121a is a coil-like (inductor-like) metal wire,
wound more than once. The transmitting antenna 121a is provided inside the
semiconductor chip 120 with use of the process technology of a semiconductor. The
transmitting antenna 121a is formed so that a magnetic field is perpendicular to the
upper surface of the semiconductor chip 120. In addition, as shown in Fig. 3, the
transmitting antenna 121a is positioned inside the semiconductor chip 120 close to
the upper surface thereof so that the upper part of the coil is exposed outside of the
upper surface of the semiconductor chip 120. The transmitting antennas 121b, 121c,
121d, 121 e and 121f and the receiving antennas 122a, 122b and 122c are formed in
the same manner as the transmitting antenna 121a.
[0027]
Each transmitting antenna is inductively coupled with a receiving antenna
via a conductor provided on the propagation plate 101a, thereby transmitting and
receiving data with the receiving antenna.
[0028]
In addition, as shown in Fig. 2, the transmitting antennas 121a, 121b, 121c,
12 Id, 121 e and 12 If and the receiving antennas 122a, 122b and 122c are provided in
a matrix inside the semiconductor chip 120. In the first row of the matrix, the
transmitting antennas 121a, 121b and 121c are provided in the stated order. In the
second row of the matrix, the receiving antennas 122a, 122b and 122c are provided
in the stated order. In the third row of the matrix, the transmitting antennas 121d,
121e and 121f are provided in the stated order.
[0029]
(2) Generating cells 125a, 125b, 125c, 125d, 125e and 125f
The generating cell 125 a generates transmission data. The transmission data
indicates either high level (H) or low level (L). The generating cell 125a outputs the
generated transmission data to the transmitting cell 123a only once after the
semiconductor device 100a is reset. That is, the generating cell 125a outputs the
transmission data only once at the time of system bootup. In addition, the generating
cell 125a receives a clock signal from an unillustrated clock signal generating cell,
and outputs the received clock signal to the transmitting cell 123a as a transmission
clock signal.
[0030]
Since the generating cells 125b, 125c, 125d, 125e and 125f each have the
same structure as that of the generating cell 125a, explanations thereof are omitted.
Note that each of the generating cells 125b, 125c, 125d, 125e and 125f outputs
generated transmission data and a transmission clock signal to a corresponding one
of transmitting cells 123b, 123c, 123d, 123e and 123f.
[0031]
In addition, which of H and L is indicated by the generated transmission
data has been determined for each of the generating cells 125a, 125b, 125c, 125d,
125eand 125f.
[0032]
Note that the generating cell 125a may output transmission data more than
once after the semiconductor device 100a is reset.
[0033]
In addition, the generating cell 125a may output the transmission data at
another timing during operation of the semiconductor device 100a instead of not
after the semiconductor device 100a is reset, in accordance with an instruction from
another circuit provided to the semiconductor chip 120. In this way, an operation
mode can be changed during operation of the semiconductor device 100a. In
addition, at another timing, the transmission data may be output in accordance with
an instruction from another circuit provided to the semiconductor chip 120 during
operation of the semiconductor device 100a. In this way, an operation mode can be
further changed after the operation mode has been changed.
[0034]
(3) Transmitting cells 123a, 123b, 123c, 123d, 123e and 123f
When data is transmitted via wireless communication, it is difficult to
constantly maintain the data indicating H. Accordingly, the transmitting cell 123a
outputs an electrical signal changing in accordance with the first pattern as a signal
indicating H, and the transmitting cell 123a outputs an electrical signal changing in
accordance with the second pattern as a signal indicating L. The first pattern and the
second pattern are described later.
[0035]
The transmitting cell 123a receives the transmission data and the
transmission clock signal from the generating cell 125a. The transmitting cell 123a
generates an electrical signal synchronizing with the received transmission clock
signal and changing in accordance with the received transmission data.
[0036]
When the transmission data indicates H, an electrical signal is generated so
as to linearly change from the first potential (for example, 0 v) to the second
potential (for example, 5 v) and further linearly change from the second potential to
the first potential, as one example (the first pattern). The transmission data indicates
the second potential. A time period required to change from the first potential to the
second potential is fixed, and a time period required to change from the second
potential to the first potential is also fixed. Such a time period is each 100 ms, for
example. In this way, the first pattern is a triangle wave. The starting point of the
change of the electrical signal is determined in synchronization with the
transmission clock signal.
[0037]
When the transmission data indicates L, an electrical signal is generated so
as to linearly change from the first potential (for example, 0 v) to the third potential
(for example, -5 v) and further linearly change from the third potential to the first
potential, as one example (the second pattern). The transmission data indicates the
third potential. A time period required to change from the first potential to the third
potential is fixed, and a time period required to change from the third potential to the
first potential is also fixed. Such a time period is each 100 ms, for example. In this
way, the second pattern is a triangle wave. The starting point of the change of the
electrical signal is determined in synchronization with the transmission clock signal.
[0038]
Next, the transmitting cell 123a outputs the generated electrical signal to the
transmitting antenna 121a.
[0039]
Since the transmitting cells 123b, 123c, 1234 123e and 123f each have the
same structure as that of the transmitting cell 123a, explanations thereof are omitted.
Note that the transmitting cells 123b, 123c, 123d, 123e and 123f each receive
transmission data and a transmission clock signal from a corresponding one of the
generating cells 125b, 125c, 125d, 125e and 125f.
[0040]
Note that Patent Literature 2 describes an example of each transmitting cell
and electrical signals that change in accordance with the first pattern and the second
pattern.
[0041]
(4) Receiving cells 124a, 124b and 124c
The receiving cell 124a consider the received electrical signal changing in
accordance with the third pattern as indicating H, and considers the received
electrical signal changing in accordance with the fourth pattern as indicating L. Here,
when the transmitting cell 123a outputs, to the transmitting antenna 121a, the
electrical signal changing in accordance with the first pattern, the receiving cell 124a
receives an electrical signal changing in accordance with the third pattern from the
receiving antenna 122a that is inductively coupled with the transmitting antenna
121a. Alternatively, when the transmitting cell 123a outputs, to the transmitting
antenna 121a, the electrical signal changing in accordance with the second pattern,
the receiving cell 124a receives an electrical signal changing in accordance with the
fourth pattern from the receiving antenna 122a that is inductively coupled with the
transmitting antenna 121a.
[0042]
The receiving cell 124a receives an electrical signal from the receiving
antenna 122a, and judges whether or not the received electrical signal changes. The
receiving cell 124a further judges in accordance with which of the third pattern and
the fourth pattern the received electrical signal changes. In the case where the
received electrical signal changes in accordance with the third pattern, the receiving
cell 124a considers the received electrical signal as indicating H, and outputs a value
indicating H to the first storage cell 126 as a first mode value indicating the first
mode. In the case where the received electrical signal changes in accordance with
the fourth pattern, the receiving cell considers the received electrical signal as
indicating L, and outputs a value indicating L to the first storage cell 126 as the first
mode value.
[0043]
The receiving cells 124b and 124c includes the same structure as that of the
receiving cell 124a.
[0044]
When the receiving cell 124b considers the received electrical signal as
indicating H, the receiving cell 124b outputs a value indicating H to the second
storage cell 127 as a second mode value indicating the second mode. When the
receiving cell 124b considers the received electrical signal as indicating L, the
receiving cell 124b outputs a value indicating L to the second storage cell 127 as the
second mode value.
[0045]
When the receiving cell 124c considers the received electrical signal as
indicating H, the receiving cell 124c outputs a value indicating H to the third storage
cell 128 as a third mode value indicating the third mode. When the receiving cell
124c considers the received electrical signal as indicating L, the receiving cell 124c
outputs a value indicating L to the third storage cell 128 as the third mode value.
[0046]
Note that Patent Literature 2 describes an example of each receiving cell
and electrical signals that change in accordance with the third pattern and the fourth
pattern.
[0047]
(5) First storage cell 126, Second storage cell 127 and Third storage cell 128
The first storage cell 126 includes an area for storing the first mode value
for setting the first mode. The first mode value indicates H, L or high impedance
(Hi-Z).
[0048]
The second storage cell 127 includes an area for storing the second mode
value for setting the second mode. The second mode value indicates H, L or Hi-Z.
[0049]
The third storage cell 128 includes an area for storing the third mode value
for setting the third mode. The third mode value indicates H, L or Hi-Z.
[0050]
(6) Interface cell 130
The interface cell 130 controls input/output of data between an external bus
30a and the logical block 131. In addition, the interface cell 130 switches between
operation modes in accordance with the first mode value, the second mode value and
the third mode value that are stored in the first storage cell 126, the second storage
cell 127 and the third storage cell 128, respectively. That is, the interface cell 130 is
a switching circuit that switches between the operation modes in accordance with
the changing electrical signal that has been detected by any one of the receiving
cells.
[0051]
(7) Logical block 131
The logical block 131 is a micro processing unit (MPU), a digital signal
processor (DSP), a memory controller, or a combination thereof, for example. In
addition, the logical block 131 performs input/output of data to/from other electronic
components mounted on the circuit substrate 10a such as an external memory 20a
via the interface cell 130.
[0052]
1.2 Inductive Coupling between Transmitting Antenna and Receiving
Antenna and Settings of Each Mode
(1) Example of Propagation plate 101a
Fig. 5 shows relation among the positions of conductors 111a, 111b and
111c on the propagation plate 101a, inductive coupling between the transmitting
antennas and receiving antennas of the semiconductor chip 120, and the first mode,
the second mode and the third mode that are stored in the first storage cell 126, the
second storage cell 127 and the third storage cell 128, respectively.
[0053]
When the transmitting cell 123a outputs, to the transmitting antenna 121a,
an electrical signal at potential that changes in accordance with the first pattern, the
transmitting antenna 121a and the receiving antenna 122 a are coupled with each
other by electromagnetic induction via the conductor 111a. Accordingly, the
receiving cell 124a receives, from the receiving antenna 122a, an electrical signal
that changes in accordance with the third pattern. The electrical signal received by
the receiving cell 124a is at a potential that changes. When the receiving cell 124a
detects an electrical signal at the potential that changes in accordance with the third
pattern, the receiving cell 124a outputs a value indicating H to the first storage cell
126 as the first mode value. The first storage cell 126 stores therein the value
indicating H as the first mode value. Fig. 5 shows a path 201 through which a signal
passes in this case. Fig. 5 also shows the first mode in this case.
[0054]
Furthermore, when the transmitting cell 123a outputs, to the transmitting
antenna 121a, an electrical signal at a potential that changes in accordance with the
second pattern, the transmitting antenna 121a and the receiving antenna 122a are
inductively coupled with each other via the conductor 111a. Accordingly, the
receiving cell 124a receives, from the receiving antenna 122a, an electrical signal
that changes in accordance with the fourth pattern. The electrical signal received by
the receiving cell 124a is at a potential that changes. When the receiving cell 124a
detects an electrical signal at a potential that changes in accordance with the fourth
pattern, the receiving cell 124a outputs a value indicating L to the first storage cell
126 as the first mode value. The first storage cell 126 stores therein the value
indicating L as the first mode value.
[0055]
On the other hand, when the transmitting cell 123a outputs, to the
transmitting antenna 121a, an electrical signal at a potential that does not change, or
when the transmitting cell 123a does not output an electrical signal to the
transmitting antenna 121a, the transmitting antenna 121a and the receiving antenna
122a are not inductively coupled with each other via the conductor 111a.
Accordingly, the receiving cell 124a does not receive an electrical signal from the
receiving antenna 122a. When the receiving cell 124a does not receive an electrical
signal, the receiving cell 124a outputs a value indicating Hi-Z to the first storage cell
126 as the first mode value. The first storage cell 126 stores therein the value
indicating Hi-Z as the first mode value.
[0056]
In addition, in the same manner as above, there are two cases: a case in
which the transmitting antenna 121b and the receiving antenna 122b are inductively
coupled with each other; and a case in which the transmitting antenna 121b and the
receiving antenna 122b are not inductively coupled with each other. Accordingly,
the second storage cell 127 stores therein a value indicating H, L or Hi-Z as the
second mode value. Fig. 5 shows a path 202 through which a signal passes when the
transmitting antenna 121b and the receiving antenna 122b are inductively coupled
with each other. Fig. 5 also shows a case in which the second storage cell 127 stores
therein a value indicating L as the second mode value.
[0057]
Furthermore, in the same manner as above, there are two cases: a case in
which the transmitting antenna 121f and the receiving antenna 122c are inductively
coupled with each other; and a case in which the transmitting antenna 121f and the
receiving antenna 122c are not inductively coupled with each other. Accordingly,
the third storage cell 128 stores a therein value indicating H, L or Hi-Z as the third
mode value. Fig. 5 shows a path 203 through which a signal passes when the
transmitting antenna 121f and the receiving antenna 122c are inductively coupled
with each other. Fig. 5 also shows the third mode in this case.
[0058]
However, since any conductor is not provided above the transmitting
antennas 121c, 121d and 121e on the propagation plate 101a, the transmitting
antennas 121c, 121d and 121 e are not inductively coupled with any receiving
antenna. Accordingly, any receiving antenna does not receive an electrical signal
from the transmitting antennas 121c, 121d and 121 e.
[0059]
(2) Example of Propagation plate 101b
Fig. 6 shows relation among the positions of the conductors 111d and 111e
on the propagation plate 101b, inductive coupling between the transmitting antennas
and receiving antennas of the semiconductor chip 120, and the first mode, the
second mode and the third mode that are stored in the first storage cell 126, the
second storage cell 127 and the third storage cell 128, respectively.
[0060]
When the transmitting cell 123a outputs, to the transmitting antenna 121a,
an electrical signal at a potential that changes in accordance with the first pattern, the
transmitting antenna 121a and the receiving antenna 122b are inductively coupled
with each other via the conductor Hid, and the transmitting antenna 121a and the
receiving antenna 122c are inductively coupled with each other via the conductor
111d. Accordingly, the receiving cell 124b receives, from the receiving antenna
122b, an electrical signal at a potential that changes in accordance with the third
pattern, and the receiving cell 124c receives, from the receiving antenna 122c, an
electrical signal at a potential that changes in accordance with the third pattern. The
electrical signal received by the receiving cell 124b is at a potential that changes.
When the receiving cell 124b detects an electrical signal at a potential that changes
in accordance with the third pattern, the receiving cell 124b outputs a value
indicating H to the second storage cell 127 as the second mode value. The second
storage cell 127 stores therein the value indicating H as the second mode value. Fig.
6 shows a path 204 through which a signal passes in this case. Fig. 6 also shows the
second mode in this case. In addition, the electrical signal received by the receiving
cell 124c is at a potential that changes. When the receiving cell 124c detects an
electrical signal at a potential that changes in accordance with the third pattern, the
receiving cell 124c outputs a value indicating H to the third storage cell 128 as the
third mode value. The third storage cell 128 stores therein the value indicating H as
the third mode value. Fig. 6 shows a path 205 through which a signal passes in this
case. Fig. 6 also shows the third mode in this case.
[0061]
When the transmitting cell 123a outputs, to the transmitting antenna 121a,
an electrical signal at a potential that changes in accordance with the second pattern,
the transmitting antenna 121a and the receiving antenna 122b are inductively
coupled with each other via the conductor 111d, and the transmitting antenna 121a
and the receiving antenna 122c are inductively coupled with each other via the
conductor Hid. Accordingly, the receiving cell 124b receives, from the receiving
antenna 122b, an electrical signal at a potential that changes in accordance with the
fourth pattern, and the receiving cell 124c receives, from the receiving antenna 122c,
an electrical signal at a potential that changes in accordance with the fourth pattern.
The electrical signal received by the receiving cell 124b has a potential that changes.
When the receiving cell 124b detects an electrical signal at a potential that changes
in accordance with the fourth pattern, the receiving cell 124b outputs a value
indicating L to the second storage cell 127 as the second mode value. The second
storage cell 127 stores therein the value indicating L as the second mode value. Also,
the electrical signal received by the receiving cell 124c is at a potential that changes.
When the receiving cell 124c detects an electrical signal at a potential that changes
in accordance with the fourth pattern, the receiving cell 124c outputs a value
indicating L to the third storage cell 128 as the third mode value. The third storage
cell 128 stores therein the value indicating L as the third mode value.
[0062]
On the other hand, when the transmitting cell 123a outputs, to the
transmitting antenna 121a, an electrical signal at a potential that does not change, or
when the transmitting cell 123a does not output an electrical signal to the
transmitting antenna 121a, the transmitting antenna 121a and the receiving antenna
122b are not inductively coupled with each other via the conductor Hid, and the
transmitting antenna 121a and the receiving antenna 122c are not inductively
coupled with each other via the conductor 111d. Accordingly, the receiving cell
124b does not receive an electrical signal from the receiving antenna 122b. When
the receiving cell 124b does not receive an electrical signal, the receiving cell
outputs a value indicating Hi-Z to the second storage cell 127 as the second mode
value. The second storage cell 127 stores therein the value indicating Hi-Z as the
second mode value. Also, the receiving cell 124c does not receive an electrical
signal from the receiving antenna 122c. When the receiving cell 124c does not
receive an electrical signal, the receiving cell outputs a value indicating Hi-Z to the
third storage cell 128 as the third mode value. The third storage cell 128 stores
therein the value indicating Hi-Z as the third mode value.
[0063]
In addition, in the same manner as above, there are two cases: a case in
which the transmitting antenna 121f and the receiving antenna 122a are inductively
coupled with each other; and a case in which the transmitting antenna 121f and the
receiving antenna 122a are not inductively coupled with each other. Accordingly,
the first storage cell 126 stores therein a value indicating H, L or Hi-Z as the first
mode value. Fig. 6 shows a path 206 through which a signal passes when the
transmitting antenna 121f and the receiving antenna 122a are inductively coupled
with each other. Fig. 6 also shows the first mode when the transmitting antenna 121f
and the receiving antenna 122a are inductively coupled with each other.
[0064]
However, since any conductor is not provided above the transmitting
antennas 121b, 121c, 121d and 121e on the propagation plate 101b, the transmitting
antennas 121b, 121c, 121d and 121e are not inductively coupled with any receiving
antenna. Accordingly, any receiving antenna does not receive an electrical signal
from the transmitting antennas 121b, 121c, 121d and 121e.
[0065]
(3) Example of Propagation plate 101c
Fig. 7 shows relation among the positions of the conductors 111f and 111g
on the propagation plate 101c, inductive coupling between the transmitting antennas
and receiving antennas of the semiconductor chip 120, and the first mode, the
second mode and the third mode that are stored in the first storage cell 126, the
second storage cell 127 and the third storage cell 128, respectively.
[0066]
When the transmitting cell 123b outputs, to the transmitting antenna 121b,
an electrical signal at a potential that changes in accordance with the first pattern, the
transmitting antenna 121b and the receiving antenna 122a are inductively coupled
with each other via the conductor 111f. Accordingly, the receiving cell 124a
receives, from the receiving antenna 122a, an electrical signal that changes in
accordance with the third pattern. The electrical signal received by the receiving cell
124a is at a potential that changes. When the receiving cell 124a detects an electrical
signal at a potential that changes in accordance with the third pattern, the receiving
cell 124a outputs a value indicating H to the first storage cell 126 as the first mode
value. The first storage cell 126 stores therein the value indicating H as the first
mode value.
[0067]
Also, when the transmitting cell 123b outputs, to the transmitting antenna
121b, an electrical signal at a potential that changes in accordance with the second
pattern, the transmitting antenna 121b and the receiving antenna 122a are
inductively coupled with each other via the conductor 111f. Accordingly, the
receiving cell 124a receives, from the receiving antenna 122a, an electrical signal
that changes in accordance with the fourth pattern. The electrical signal received by
the receiving cell 124a is at a potential that changes. When the receiving cell 124a
detects an electrical signal at a potential that changes in accordance with the fourth
pattern, the receiving cell 124a outputs a value indicating L to the first storage cell
126 as the first mode value. The first storage cell 126 stores therein the value
indicating L as the first mode value. Fig. 7 shows a path 207 through which a signal
passes in this case.
[0068]
On the other hand, when the transmitting cell 123b outputs, to the
transmitting antenna 121b, an electrical signal at a potential that does not change, or
when the transmitting cell 123b does not output an electrical signal to the
transmitting antenna 121b, the transmitting antenna 121b and the receiving antenna
122a are not inductively coupled with each other via the conductor 111f. Therefore,
the receiving cell 124a does not receive an electrical signal from the receiving
antenna 122a. When the receiving cell 124a does not receive an electrical signal, the
receiving cell 124a outputs a value indicating Hi-Z to the first storage cell 126 as the
first mode value. The first storage cell 126 stores therein the value indicating Hi-Z as
the first mode value.
[0069]
In addition, in the same manner as above, there are two cases: a case in
which the transmitting antenna 121 f and the receiving antenna 122b are inductively
coupled with each other; and a case in which the transmitting antenna 121f and the
receiving antenna 122b are not inductively coupled with each other. The second
storage cell 127 stores therein a value indicating H, L or Hi-Z as the second mode
value. Fig. 7 shows a path 208 through which a signal passes when the transmitting
antenna 12 If and the receiving antenna 122b are inductively coupled with each other.
Fig. 7 also shows the second mode when the transmitting antenna 121f and the
receiving antenna 122b are inductively coupled with each other.
[0070]
However, since any conductor is not provided above the transmitting
antennas 121a, 121c, 121d and 121 e on the propagation plate 101c, the transmitting
antennas 121a, 121c, 121d and 12le are not inductively coupled with any receiving
antenna. Accordingly, any receiving antenna does not receive an electrical signal
from the transmitting antennas 121a, 121c, 121d and 121e.
[0071]
The receiving antenna 122c is not inductively coupled with any transmitting
antenna, and is in a state of Hi-Z. In this case, as shown in Fig. 7, the third mode has
a value indicating Hi-Z.
[0072]
1.3 Examples of Application of Semiconductor Device
The following describes examples of applications of semiconductor devices
to which the propagation plates described above adhere.
[0073]
Figs. 8, 9, and 10 respectively show the circuit substrate 10a including the
semiconductor device 100a to which the propagation plate 101a adheres, a circuit
substrate 10b including a semiconductor device 100b to which the propagation plate
101b adheres, and a circuit substrate 10c including a semiconductor device 100c to
which the propagation plate 101c adheres.
[0074]
On the circuit substrate 10a, the semiconductor device 100a, an 8-bit width
bus 30a, and a NOR flash memory 20a are mounted. On the circuit substrate 10b,
the semiconductor device 100b, a 16-bit width bus 30b, and a NOR flash memory
20b are mounted. On the circuit substrate 10c, the semiconductor device 100c, a
NAND bus 30c, and a NAND flash memory 20c are mounted. Note that though
other electronic components are mounted on each circuit substrate, these electronic
components are omitted.
[0075]
Here, in the semiconductor chip 120, the first mode, the second mode, and
the third mode that are respectively received by the receiving antennas 122a, 122b,
and 122c and stored in the first storage cell 126, the second storage cell 127, and the
third storage cell 128 are for determining a memory or a bus on the circuit substrates
10a, 10b and 10c described above.
[0076]
The first mode is for determining the type of a memory. When a value of the
first mode indicates H, the semiconductor chip 120 judges that a NOR flash memory
is connected, and performs an operation accordingly. When a value of the first mode
indicates L, the semiconductor chip 120 judges that a NAND flash memory is
connected, and performs an operation accordingly.
[0077]
The second mode is for determining a bus. When a value of the second
mode indicates H, the semiconductor chip 120 judges that a 16-bit width bus is
connected, and performs an operation accordingly. When a value of the second
mode indicates L, the semiconductor chip 120 judges that an 8-bit width bus is
connected, and performs an operation accordingly.
[0078]
The third mode is for determining an operation mode when a NOR flash
memory is used. When a value of the third mode indicates H, the semiconductor
chip 120 operates in a fixed wait mode. When a value of the third mode indicates L,
the semiconductor chip 120 operates in a hand-shake mode using an acknowledge
signal. In addition, when a NAND flash memory is used, the semiconductor chip
120 does not refer to the third mode.
[0079]
The transmitting cell 123f of the semiconductor chip 120 always outputs a
value indicating H. The transmitting cell 123b of the semiconductor chip 120 always
outputs a value indicating L. The transmitting cell 123a of the semiconductor chip
120 always outputs a value indicating H.
[0080]
Accordingly, H is set to the third mode of the semiconductor device 100a, L
is set to the second mode of the semiconductor device 100a, and H is set to the first
mode of the semiconductor device 100a.
[0081]
Also, H is set to the third mode of the semiconductor device 100b, H is set
to the second mode of the semiconductor device 100b, and H is set to the first mode
of the semiconductor device 100b.
[0082]
Furthermore, Hi-Z is set to the third mode of the semiconductor device 100c,
H is set to the second mode of the semiconductor device 100c, and L is set to the
first mode of the semiconductor device 100c.
[0083]
As described above, according to the semiconductor device 100a shown in
Fig. 8, H is set to the third mode, L is set to the second mode, and H is set to the first
mode. Accordingly, on the circuit substrate 10a, the type of the memory is a NOR
flash memory (first mode = H), a bus width is 8-bit (second mode = L), and the
NOR flash memory is accessed in the fixed wait mode (third mode = H).
[0084]
In addition, according to the semiconductor device 100b shown in Fig. 9, H
is set to the third mode, H is set to the second mode, and H is set to the first mode.
Accordingly, on the circuit substrate 10b, the type of the memory is a NOR flash
memory (first mode = H), a bus width is 16-bit (second mode = H), and the NOR
flash memory is accessed in the fixed wait mode (third mode = H).
[0085]
In addition, according to the semiconductor device 100c shown in Fig. 10,
H is set to the second mode, and L is set to the first mode. Accordingly, on the
circuit substrate 10c, the type of the memory is a NAND flash memory (first mode =
L), and a bus width is 16-bit (second mode = H).
[0086]
As described above, according to the present embodiment, it is possible to
configure a semiconductor device that can change the setting with use of close
proximity wireless communication without using an external dedicated terminal or
an external shared terminal.
[0087]
2. Embodiment 2
A semiconductor device lOOd of another embodiment of the present
invention is described below.
[0088]
The semiconductor device lOOd includes a structure similar to that of the
semiconductor device 100a. The semiconductor device lOOd differs from the
semiconductor device 100a in that conductors are provided so as to be close to
transmitting antennas and receiving antennas that are provided on the lower surface
of the semiconductor device 100d, as described be10w in detail. Aside from this
point, the semiconductor device 100d is identical to the semiconductor device 100a.
[0089]
As shown in Figs. 11 and 12, the semiconductor device 100d is mounted on
a circuit substrate 10d along with unillustrated other electronic components, and is
composed of a propagation plate 101d, a semiconductor chip 120d, and a package
150d. The propagation plate 10ld is mounted on the circuit substrate 10d. The
package 150d surrounds the semiconductor chip 120d to provide protection.
[0090]
Transmitting antennas 121ad, 121bd and 121 cd, receiving antennas 122ad,
122bd and 122cd, and transmitting antennas 121dd, 121 ed, and 121fd are provided
in a matrix inside the semiconductor chip 120d so that the upper part of each
antenna is exposed outside of the 10wer surface of the semiconductor chip 120d.
[0091]
As shown in Figs. 11 and 12, the propagation plate 10ld is made of an
insulator and adheres to the upper surface of the circuit substrate 10d, and
conductors 111ad, 111bd and 111 cd adhere to the upper surface of the propagation
plate 10ld with an acrylic adhesive and the like. The conductors 111ad, 111bd and
111ed are made of Cu, for example, and are band-like conductive foils like the
conductors 111a, 111b and 111c.
[0092]
When the propagation plate 10ld adheres to the upper surface of the circuit
substrate 10d and the semiconductor chip 120d surrounded by the package 150d to
be protected is provided on the propagation plate 10ld, the conductors 111ad, 111bd
and 111ed have adhered to the upper surface of the propagation plate 10ld so that
one end of the conductor 111 ad is c10se to the transmitting antenna 121 ad, the other
end of the conductor 1 Had is c10se to the receiving antenna 122ad, one end of the
conductor 111bd is c10se to the transmitting antenna 121bd, the other end of the
conductor 111bd is close to the receiving antenna 122bd, one end of the conductor
111ed is close to the receiving antenna 122cd, and the other end of the conductor
111ed is close to the transmitting antenna 121fd.
[0093]
The distance between the upper surface of each conductor and the 10wer
surface of the semiconductor chip 120d is equal to or less than 1 mm.
[0094]
As described above, according to the semiconductor device 100a of
Embodiment 1, the propagation plate 101a adheres to the upper surface of the
semiconductor chip 120, and according to the semiconductor device 100d of
Embodiment 2, the propagation plate 101d is provided on the circuit substrate 10d.
[0095]
3. Modifications
While the present invention has been described based on the above
Embodiments, the present invention is of course not limited to these Embodiments.
The present invention also includes cases such as the following.
[0096]
(1) As shown in Fig. 13, the semiconductor chip 120 may farther include a
first circuit block 141, a switching cell 142, a second circuit block 143, and a third
circuit block 144. In addition, the semiconductor chip 120 may include the first
circuit block 141, the switching cell 142, the second circuit block 143, and the third
circuit block 144 that are shown in Fig. 13 instead of the 10gical block 131.
Alternatively, the semiconductor chip 120 may include the first circuit block 141,
the switching cell 142, the second circuit block 143, and the third circuit block 144
that are shown in Fig. 13 inside the 10gical block 131.
[0097]
The switching cell 142 reads the first mode from the first storage cell 126.
When the read first mode is H, the switching cell 142 connects the first circuit block
141 and the second circuit block 143, and disconnects the first circuit block 141 and
the third circuit block 144. When the read first mode is L, the switching cell 142
disconnects the first circuit block 141 and the second circuit block 143, and connects
the first circuit block 141 and the third circuit block 144.
[0098]
(a) As the first example, the semiconductor chip 120 is mounted on a digital
camera. The second circuit block 143 is a circuit that is used for normal operation
and outputs a signal of a normal operation. For example, the second circuit block
143 is an image processing unit of the digital camera, and outputs an image signal
generated according to photography by the digital camera. The third circuit block
144 is a circuit that is used for a test and outputs a signal for a test. For example, the
third circuit block 144 outputs predetermined several patterns of image signals for
the test. The first circuit block 141 is connected to the second circuit block 143 or
the third circuit block 144, receives an image signal from the second circuit block
143 or the third circuit block 144, and generates compressed image data based on
the received image signal. In this way, when the first mode is H, the semiconductor
chip 120 operates as a circuit unit of a normal digital camera. When the first mode is
L, the semiconductor chip 120 performs an operation for testing the first circuit
block 141.
[0099]
(b) As the second example, the semiconductor chip 120 is mounted on a
content playback apparatus that plays back a content recorded on a recording
medium. The recording medium records thereon an encrypted content using the first
encryption method. The content playback apparatus decrypts the encrypted content
and plays back the decrypted content. The first circuit block 141 reads the encrypted
content from the recording medium. The second circuit block 143 decrypts the
encrypted content using the first encryption method. The third circuit block 144
decrypts the encrypted content using the second encryption method. In the first place,
H is set to the first storage cell 126, and the first circuit block 141 and the second
circuit block 143 are connected to each other. Suppose that after the content
playback apparatus is sold, encryption by the first encryption method is decrypted
by an unauthorized individual. After that, a new recording medium records thereon
an encrypted content using the second encryption method, and is sold. A new
propagation plate adheres to the semiconductor chip 120, a new content playback
apparatus is manufactured and sold, and a value indicating L is stored in the first
storage cell 126. In this case, the first circuit block 141 and the third circuit block
144 are connected to each other. The encrypted content stored in the new recording
medium is decrypted using the second encrypted method and played back.
[0100]
(c) As the third example, the first circuit block 141 may be a field
programmable gate array (FPGA), the second circuit block 143 may be a memory
circuit, and the third circuit block 144 may also be a memory circuit. The second
circuit block 143 may store therein configuration data for configuring the first
processing circuit in the FPGA. The third circuit block 144 may store therein
configuration data for configuring the second processing circuit in the FPGA. When
the first storage cell 126 stores therein a value indicating H as the first mode value,
the first circuit block 141, which is an FPGA, reads the configuration data from the
second circuit block 143, which is a memory circuit, and configures the first
processing circuit in the FPGA using the read configuration data. When the first
storage cell 126 stores therein a value indicating L as the first mode value, the first
circuit block 141, which is an FPGA, reads the configuration data from the third
circuit block 144, which is a memory circuit, and configures the second processing
circuit in the FPGA using the read configuration data.
[0101]
(2) In each Embodiment described above, the 10gical block included in the
semiconductor device is, as one example, an image processing circuit that processes
images photographed by a digital camera. The semiconductor chip including each
component shown in Fig. 4 may be a large-scale integration (LSI) circuit composed
of one s111con device.
[0102]
(3) As described above, the generating cell 125a generates transmission data
indicating H or L. However, the generating cell 125a is not limited to this.
[0103]
The generating cell 125 a may generate only transmission data indicating H,
and output the transmission data to the transmitting cell 123a. An initial value of the
first mode stored in the first storage cell 126 is L. When the receiving cell 124a
receives an electrical signal at a potential that changes in accordance with the third
pattern, the receiving cell 124a outputs a value indicating H to the first storage cell
126 as the first mode value. The first storage cell 126 stores therein the value
indicating H as the first mode value.
[0104]
In addition, the generating cell 125a may generate more types of
transmission data. For example, the generating cell 125a may generate four types of
transmission data indicating -10 v, -5 v, 5 v and 10 v, for example. The transmitting
cell 123a receives the transmission data from the generating cell 125a, and generates
four types of electrical signals based on the received transmission data. These
electrical signals are each a triangle wave as described above. Their respective
summit potentials are -10 v, -5 v, 5 v, and 10 v. When receiving an electrical signal
among the four types of electrical signals above, the receiving cell 124a identifies
the received electrical signal, and outputs one of four pieces of mode information
corresponding to the identified electrical signal to the first storage cell 126 as the
first mode value. The first storage cell 126 stores therein the first mode indicating
one of the four pieces of mode information. The interface cell 130 uses four different
operations according to the first mode stored in the first storage cell 126.
[0105]
(4) According to the above Embodiments, the semiconductor chip 120
includes six sets of a generating cell, a transmitting cell, and a transmitting antenna
and three sets of a receiving cell and a receiving antenna. However, the
semiconductor chip 120 is not limited to such a structure.
[0106]
The semiconductor chip 120 may include less than six sets of a generating
cell, a transmitting cell, and a transmitting antenna, and may include seven or more
sets of a generating cell, transmitting cell, and a transmitting antenna.
[0107]
In addition, the semiconductor chip 120 may include less than three sets of a
receiving cell and a receiving antenna, and may include four or more sets of a
receiving cell and a receiving antenna. Here, the number of modes increases or
decreases in accordance with the number of sets of a receiving cell and a receiving
antenna.
[0108]
(5) According to the above Embodiments, the first storage cell 126, the
second storage cell 127 and the third storage cell 128 respectively store therein the
first mode, the second mode, and the third mode, but these structures are not limited
to such structures.
[0109]
The semiconductor chip 120 may include a mode storage instead of the first
storage cell 126, the second storage cell 127, and the third storage cell 128. The
mode storage may store therein the first mode, the second mode, and the third mode.
[0110]
(6) According to the above Embodiments, the semiconductor chip 120
includes the generating cells 125a, 125b, 125c, 125d, 125e and 125f, but the
semiconductor chip 120 is not limited to such a structure.
[0111]
The semiconductor chip 120 may include only one generating cell instead of
the generating cells 125a, 125b, 125c, 125d, 125e and 125f. The one generating cell
may transmit the same transmission data and the same transmission c10ck signal to
the transmitting cells 123a, 123b, 123c, 123d, 123e and 123f.
[0112]
In addition, the semiconductor chip 120 may include only first and second
generating cells instead of the generating cells 125a, 125b, 125c, 125d, 125e and
125f. The first generating cell may transmit the first transmission data and the first
transmission c10ck signal to each of the transmitting cells 123a, 123b and 123c. The
second generating cell may transmit the second transmission data and the second
transmission c10ck signal to each of the transmitting cells 123d, 123e and 123f. Here,
the first transmission data indicates H, and the second transmission data indicates L.
On the contrary, the first transmission data may indicate L, and the second
transmission data may indicate H.
[0113]
Furthermore, the semiconductor chip 120 may include only one generating
cell instead of the generating cells 125a, 125b, 125c, 125d, 125e and 125f. The one
generating cell may transmit the same first transmission data and the first
transmission c10ck signal to the transmitting cells 123a, 123b, and 123c, and may
transmit the second transmission data and the second transmission c10ck signal to
the transmitting cells 123d, 123e and 123f. Here, the first transmission data indicates
H, and the second transmission data indicates L. Conversely, the first transmission
data may indicate L, and the second transmission data may indicate H.
[0114]
(7) The semiconductor device shown in each Embodiment described above
may be used for a digital still camera, a digital video camera, a mobile phone, a
playback apparatus that plays back a content recorded on a recording medium such
as a DVD and a BD, a digital broadcast reception apparatus, a digital content
recording apparatus (video recorder), a video display apparatus (digital television), a
personal computer and the like.
[0115]
(8) According to the Embodiments described above, the three conductors
adhere to the upper surface of the propagation plate 101a, and the two conductors
adhere to the upper surfaces of the propagation plate 101b and the propagation plate
101c. However, the number of the propagation plates is not limited to the above.
[0116]
One conductor may adhere to the upper surface of a propagation plate, and
four or more propagation plates may adhere to the upper surface of a propagation
plate.
[0117]
(9) The above Embodiments and modifications may be combined with one
another.
[0118]
4. As described above, the present invention is a semiconductor device
comprising: a semiconductor chip including a transmitting cell, a receiving cell, a
first antenna connected to the transmitting cell, and a second antenna connected to
the receiving cell; and a conductor disposed close to the first antenna and the second
antenna, wherein the transmitting cell and the receiving cell communicate with each
other using close proximity wireless communication
[0119]
The above structure has the advantageous effect of changing the setting of
the internal operation mode without increasing the number of terminals of the
semiconductor device.
[0120]
Here, the first antenna and the second antenna may be each a coiled metal
wire, and the first antenna and the second antenna may be inductively coupled with
each other via the conductor.
[0121]
Here, a sheet having the conductor may adhere to a surface of the
semiconductor chip.
[0122]
Here, the semiconductor chip may be disposed on a circuit substrate, and
the conductor may be disposed on the circuit substrate.
[0123]
Here, the transmitting cell may output a first electrical signal to the first
antenna, the first electrical signal being at a potential that changes from a first
potential to a second potential, the receiving cell may detect a second electrical
signal, the second electrical signal being at a potential that changes, and the
semiconductor chip may further include a switching cell that switches between
operation modes when the receiving cell detects the second electrical signal.
[0124]
In addition, the present invention provides a signal propagation plate
provided close to a semiconductor chip, the semiconductor chip including a
transmitting cell, a receiving cell, a first antenna connected to the transmitting cell,
and a second antenna connected to the receiving cell, the propagation plate
comprising: a conductor disposed close to the first antenna and the second antenna,
wherein the transmitting cell and the receiving cell communicate with each other
using close proximity wireless communication.
[Industrial Applicab111ty]
[0125]
The semiconductor device using close proximity wireless communication
pertaining to the present invention is able to change the setting of the internal
operation mode without increasing the number of terminals of the semiconductor
device, and is applicable to the setting of the operation mode of the semiconductor
device, for example. In particular, the semiconductor device is useful when applied
to many types of apparatuses (digital television, video recorder, mobile phone and
the like).
We Claim:
1. A semiconductor device, comprising:
a semiconductor chip including a transmitting cell, a receiving cell, a first
antenna connected to the transmitting cell, and a second antenna connected to the
receiving cell; and
a conductor disposed close to the first antenna and the second antenna,
wherein
the transmitting cell and the receiving cell communicate with each other
using close proximity wireless communication.
2. The semiconductor device of Claim 1, wherein
the first antenna and the second antenna are each a coiled metal wire, and
the first antenna and the second antenna are inductively coupled with each
other via the conductor.
3. The semiconductor device of Claim 2, wherein
a sheet having the conductor adheres to a surface of the semiconductor chip.
4. The semiconductor device of Claim 2, wherein
the semiconductor chip is disposed on a circuit substrate, and
the conductor is disposed on the circuit substrate.
5. The semiconductor device of Claim 2, wherein
the transmitting cell outputs a first electrical signal to the first antenna, the
first electrical signal being at a potential that changes from a first potential to a
second potential,
the receiving cell detects a second electrical signal, the second electrical
signal being at a potential that changes, and
the semiconductor chip further includes a switching cell that switches
between operation modes when the receiving cell detects the second electrical
signal.
6. A signal propagation plate provided close to a semiconductor chip, the
semiconductor chip including a transmitting cell, a receiving cell, a first antenna
connected to the transmitting cell, and a second antenna connected to the receiving
cell, the propagation plate comprising:
a conductor disposed close to the first antenna and the second antenna,
wherein
the transmitting cell and the receiving cell communicate with each other
using close proximity wireless communication.

ABSTRACT

The present invention provides a semiconductor device capable of changing
the setting of the internal operation mode without increasing the number of terminals
of the semiconductor device. The semiconductor device 100a includes a transmitting
cell, a receiving cell, a semiconductor chip 120 including a transmitting antenna
121a and a receiving antenna 122a, and a conductor 111a. The transmitting antenna
121a is connected to the transmitting cell, and the receiving antenna 122a is
connected to the receiving cell. The conductor 111a is provided close to the
transmitting antenna 121a and the receiving antenna 122a. close proximity wireless
communication is used between the transmitting cell and the receiving cell.