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Semiconductor Sensor, Method For Producing The Same, And Combined Sensor

Abstract: In order for a semiconductor sensor to detect a target substance selectively and with high sensitivity this semiconductor sensor comprises a base plate a first electrode a second electrode and a semiconductor layer provided between the first electrode and the second electrode wherein: the semiconductor layer includes a semiconductor component and an immunoglobulin partial structure; and the immunoglobulin partial structure is bound or attached to the semiconductor component via a linking group L1 in a heavy chain hinge region. Furthermore in a method of manufacturing a semiconductor sensor according to the present invention a step of forming a semiconductor layer includes a step of applying a semiconductor component between a first electrode and a second electrode. Fig 3.

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Notices, Deadlines & Correspondence

Patent Information

Application #
Filing Date
16 April 2019
Publication Number
20/2019
Publication Type
INA
Invention Field
PHYSICS
Status
Email
patent@depenning.com
Parent Application

Applicants

TORAY INDUSTRIES, INC.
1-1, Nihonbashi-Muromachi 2-chome, Chuo-ku, Tokyo 1038666

Inventors

1. NAITO, Kojiro
c/o Shiga Plant, Toray Industries, Inc., 1-1, Sonoyama 1-chome, Otsu-shi, Shiga 5208558
2. NAGAO, Kazumasa
c/o Shiga Plant, Toray Industries, Inc., 1-1, Sonoyama 1-chome, Otsu-shi, Shiga 5208558
3. MURASE, Seiichiro
c/o Shiga Plant, Toray Industries, Inc., 1-1, Sonoyama 1-chome, Otsu-shi, Shiga 5208558

Specification

WE CLAIM:
1. A semiconductor sensor comprising:
a substrate;
a first electrode;
a second electrode; and
a semiconductor layer located between the first electrode and the second electrode, wherein
the semiconductor layer includes a semiconducting component to which target recognition molecules are bonded or attached,
the target recognition molecule includes at least a target capture body X and a linking group L2,
the target capture body X is a protein or nucleic acid having a molecular weight of 20,000 or higher and 200,000 or lower, and
number of atom(s) N from the atom bonded to the semiconducting component or from the atom bonded to the group attached to the semiconducting component to the atom bonded to the atom originated from the target capture body X in the linking group L2 is 5 or more and 30 or less.
2. The semiconductor sensor according to claim 1, wherein
the target recognition molecule is a compound
represented by a general formula (1) or a macromolecular compound having a structure represented by a general formula (2) as a repeating unit:
Ar1-L2-X (D
wherein, in the general formula (1), Ar1 is a substituted or unsubstituted aromatic heterocyclic group or a substituted or unsubstituted aromatic hydrocarbon group;
L2 is the linking group L2 and has number of atom(s) N1

from the atom bonded to the atom originated from Ar1 to the atom bonded to the atom originated from X of 5 or more and 30 or less; and
X is the target capture body X and is a protein or nucleic acid having a molecular weight of 20,000 or higher and 200,000 or lower,
Ah "
wherein, in the general formula (2), Ar2 is a substituted or unsubstituted aromatic heterocyclic group or a substituted or unsubstituted aromatic hydrocarbon group;
L2 is the linking group L2 and has number of atom(s) N2 from the atom bonded to the atom originated from Ar2 to the atom bonded to the atom originated from X of 5 or more and 30 or less; and
X is the target capture body X and is a protein or nucleic acid having a molecular weight of 20,000 or higher and 200,000 or lower.
3. The semiconductor sensor according to claim 2, wherein
the target recognition molecule is the compound
represented by the general formula (1),
Ar1 is the substituted or unsubstituted aromatic
hydrocarbon group in the general formula (1), and
number of carbon atoms of the aromatic hydrocarbon
group not containing a substituent is 14 or more and 22 or
less.
4. The semiconductor sensor according to claim 1, wherein
the number of atom(s) N is 8 or more and 16 or less.

5. The semiconductor sensor according to claim 2 or 3, wherein the number of atom(s) N1 and/or N2 is 8 or more and 16 or less.
6. The semiconductor sensor according to any one of claims 1 to 5, wherein the target capture body X is immunoglobulin or a substructure of immunoglobulin.
7. The semiconductor sensor according to any one of claims 1 to 6, wherein the target capture body X is a substructure of immunoglobulin.
8. The semiconductor sensor according to claim 1, wherein the substructure of immunoglobulin forms a bond to the linking group L2 in a hinge region of a heavy chain.
9. The semiconductor sensor according to claim 6, 7 or 8, wherein the substructure of immunoglobulin is a substructure of immunoglobulin that selectively interacts with at least one of hemoglobin or glycated hemoglobin.
10. The semiconductor sensor according to any one of claims 1 to 9, wherein the molecular weight of the substructure of immunoglobulin is 20,000 or higher and 120,000 or lower.
11. The semiconductor sensor according to any one of claims 1 to 10, wherein the linking group L1 and/or L2 contains at least one structure selected from the group consisting of an ether bond, an amide bond, and an imide bond.

12. The semiconductor sensor according to any one of claims 1 to 11, wherein the linking group L1 and/or L2 contains a five-membered ring structure.
13. The semiconductor sensor according to any one of claims 1 to 12, wherein the semiconducting component is at least one component selected from the group consisting of fullerene, carbon nanotube, graphene, and carbon nanohorn.
14. The semiconductor sensor according to any one of claims 1 to 13, wherein a conjugated polymer is attached to at least a part of the semiconducting component.
15. A combined sensor comprising:
the semiconductor sensor according to any one of claims 1 to 14; and
a sensor configured to detect glucose.
16. A method for producing a semiconductor sensor that
comprises a substrate, a first electrode, a second
electrode, and a semiconductor layer located between the
first electrode and the second electrode, the method
comprising:
a step of forming the semiconductor layer, wherein the step of forming the semiconductor layer comprises
a step of applying a semiconducting component between the
first electrode and the second electrode.

Documents

Orders

Section Controller Decision Date

Application Documents

# Name Date
1 201947015224-Correspondence to notify the Controller [25-08-2023(online)].pdf 2023-08-25
1 201947015224-TRANSLATIOIN OF PRIOIRTY DOCUMENTS ETC. [16-04-2019(online)].pdf 2019-04-16
2 201947015224-US(14)-HearingNotice-(HearingDate-01-09-2023).pdf 2023-08-11
2 201947015224-STATEMENT OF UNDERTAKING (FORM 3) [16-04-2019(online)].pdf 2019-04-16
3 201947015224-PROOF OF RIGHT [16-04-2019(online)].pdf 2019-04-16
3 201947015224-FER.pdf 2021-10-18
4 201947015224-PRIORITY DOCUMENTS [16-04-2019(online)].pdf 2019-04-16
4 201947015224-ABSTRACT [29-06-2021(online)].pdf 2021-06-29
5 201947015224-POWER OF AUTHORITY [16-04-2019(online)].pdf 2019-04-16
5 201947015224-CLAIMS [29-06-2021(online)].pdf 2021-06-29
6 201947015224-FORM 1 [16-04-2019(online)].pdf 2019-04-16
6 201947015224-FER_SER_REPLY [29-06-2021(online)].pdf 2021-06-29
7 201947015224-FORM 3 [29-06-2021(online)].pdf 2021-06-29
7 201947015224-DRAWINGS [16-04-2019(online)].pdf 2019-04-16
8 201947015224-FORM-26 [29-06-2021(online)].pdf 2021-06-29
8 201947015224-DECLARATION OF INVENTORSHIP (FORM 5) [16-04-2019(online)].pdf 2019-04-16
9 201947015224-FORM 18 [02-07-2020(online)].pdf 2020-07-02
9 201947015224-COMPLETE SPECIFICATION [16-04-2019(online)].pdf 2019-04-16
10 201947015224-CLAIMS UNDER RULE 1 (PROVISIO) OF RULE 20 [16-04-2019(online)].pdf 2019-04-16
10 201947015224-FORM 3 [06-06-2020(online)].pdf 2020-06-06
11 201947015224-FORM 3 [23-05-2019(online)].pdf 2019-05-23
11 201947015224.pdf 2019-04-17
12 Correspondence by Agent_Form1_29-04-2019.pdf 2019-04-29
13 201947015224-FORM 3 [23-05-2019(online)].pdf 2019-05-23
13 201947015224.pdf 2019-04-17
14 201947015224-CLAIMS UNDER RULE 1 (PROVISIO) OF RULE 20 [16-04-2019(online)].pdf 2019-04-16
14 201947015224-FORM 3 [06-06-2020(online)].pdf 2020-06-06
15 201947015224-COMPLETE SPECIFICATION [16-04-2019(online)].pdf 2019-04-16
15 201947015224-FORM 18 [02-07-2020(online)].pdf 2020-07-02
16 201947015224-DECLARATION OF INVENTORSHIP (FORM 5) [16-04-2019(online)].pdf 2019-04-16
16 201947015224-FORM-26 [29-06-2021(online)].pdf 2021-06-29
17 201947015224-DRAWINGS [16-04-2019(online)].pdf 2019-04-16
17 201947015224-FORM 3 [29-06-2021(online)].pdf 2021-06-29
18 201947015224-FER_SER_REPLY [29-06-2021(online)].pdf 2021-06-29
18 201947015224-FORM 1 [16-04-2019(online)].pdf 2019-04-16
19 201947015224-CLAIMS [29-06-2021(online)].pdf 2021-06-29
19 201947015224-POWER OF AUTHORITY [16-04-2019(online)].pdf 2019-04-16
20 201947015224-PRIORITY DOCUMENTS [16-04-2019(online)].pdf 2019-04-16
20 201947015224-ABSTRACT [29-06-2021(online)].pdf 2021-06-29
21 201947015224-PROOF OF RIGHT [16-04-2019(online)].pdf 2019-04-16
21 201947015224-FER.pdf 2021-10-18
22 201947015224-US(14)-HearingNotice-(HearingDate-01-09-2023).pdf 2023-08-11
22 201947015224-STATEMENT OF UNDERTAKING (FORM 3) [16-04-2019(online)].pdf 2019-04-16
23 201947015224-TRANSLATIOIN OF PRIOIRTY DOCUMENTS ETC. [16-04-2019(online)].pdf 2019-04-16
23 201947015224-Correspondence to notify the Controller [25-08-2023(online)].pdf 2023-08-25

Search Strategy

1 2021-03-1816-24-09E_18-03-2021.pdf
1 SearchHistory(16)AE_31-08-2021.pdf
2 2021-03-1816-24-09E_18-03-2021.pdf
2 SearchHistory(16)AE_31-08-2021.pdf