1. A silicide on oxide-based electrostatically doped (SILO-ED) carrier selective contact-based passivated emitter and rear contact (PERC) photovoltaic device, the photovoltaic device comprising: a PERC solar cell having an upright pyramid texture at a front surface; an oxide layer of first predefined thickness configured as an interfacial layer being deposited at least partially over the front surface of the PERC solar cell, and a metal silicide having a predefined work function being directly deposited onto the interfacial oxide layer.

2. The photovoltaic device as claimed in claim 1, wherein the metal silicide is Erbium Silicide (ErSi2) with the predefined work function (<1016 cm"3, and the n+ type emitter is doped with lxl019cm"3.

6. The photovoltaic device as claimed in claim 4, wherein a rear surface of the photovoltaic device comprises a heavily doped (p+) region at the back of the substrate as a back surface field (BSF) with doping of 1020 cm"3.

7. The photovoltaic device as claimed in claim 1, wherein the photovoltaic device comprises a first dielectric stack of materials comprising SiNx of 70 nm thickness, and Si02 of 10 nm thickness, configured on the upright pyramid textured front surface of the PERC solar cell.

8. The photovoltaic device as claimed in claim 1, wherein the photovoltaic device comprises a second dielectric stack of materials comprising AI2O3 of 50 nm thickness and Si02 of 40 nm thickness, configured on a rear surface ofthePERC solar cell.

9. The photovoltaic device as claimed in claim 1, wherein the photovoltaic device comprises a first metallic contact configured with the first surface, and a second metallic contact configured with the rear surface of the photovoltaic device.

10. The photovoltaic device as claimed in claim 9, wherein the first metallic contact is made of Silver, and the second metallic contact is made of aluminum.

The present disclosure relates to the field of semiconductor devices. More particularly, the present disclosure relates to a silicide on oxide-based electrostatically doped (SILO-ED) carrier selective contact-based passivated emitter and rear contact (PERC) photovoltaic device, which has improved penetration of the electric field (EF) in the silicon wafer, has better control in inducing the induced charges and correspondingly the banding of energy bands, and has low tunneling resistance. BACKGROUND [0002] Background description includes information that may be useful in understanding the present invention. It is not an admission that any of the information provided herein is prior art or relevant to the presently claimed invention, or that any publication specifically or implicitly referenced is prior art. [0003] A standard solar cell or photovoltaic (PV) cell contains two layers of silicon, commonly called "n-type" and "p-type" for their negative and positive charge behavior. PV cell creates electricity when sunlight hits the PV cells, knocking electrons loose from the n-type layer as the p-type layer accepts them, creating an electric field. PV cells built with only two silicon wire layers will encounter a few efficiency losses. The first type of loss comes from inefficiencies with capturing sunlight; sunlight can be reflected by the solar cell itself, blocked by wires, or sometimes go all the way through the cell and turn into heat, reducing cell efficiency. Another type of loss stems from the random motion of electrons knocked loose by the light, where electrons may recombine with the silicon material on the front and back of the solar cell or sometimes miss going through the circuit. [0004] The above deficiencies are mitigated by a PERC cell, which stands for "passivated emitter and rear contact" or "rear cell". Solar panels built with PERC cells have an additional layer on the back of the traditional solar cells. This additional layer allows more sunlight to be captured and turned into electricity, making PERC cells more efficient than traditional cells. PERC modules are also able to mitigate rear recombination and prevent longer wavelengths from becoming heat that would impair the cell's performance. [0005] PERC cells employ a conventional (polycrystalline on oxide) POLO contact approach, where the electron-selective contact n+ type is doped with 2x 1020 cm"3, and poly-Si material is deposited over a thin oxide layer to control the energy bands of the underlying silicon wafer near the contact interface. In this approach, the doping of poly-Si plays a crucial role in the tunneling of electrons, where heavily doped poly-Si helps in better tunneling. Experimentally, this is achieved by crystallizing the amorphous silicon (a-Si) fingers to polycrystalline silicon (poly- Si), which further doped during the later POCh diffusion process. To create desired n+ type poly-Si layer, a thermal budget is required, which is not feasible. Therefore, another approach is required where the doping is induced in the poly-Si layer with the help of electrostatic doping (ED) to avoid the actual physical doping. To induce the n+ type ED region inside the poly-Si layer, firstly, the work function of the cathode, i.e., <1016 cm"3, and the n+ type emitter 102-2 can be doped with lxl019cm"3. [00051] In an embodiment, a rear surface of the photovoltaic device 100 can include a heavily doped (p+) region 108 at the back of the substrate as a back surface field (BSF) 108 with doping of 1020 cm-3. [00052] In an embodiment, the photovoltaic device 100 can include a first dielectric stack 110-1 and 110-2 of materials including SiNx (110-1) of 70 nm thickness, and Si02 (110-2) of 10 nm thickness, configured over the emitter 102-2 of the upright pyramid textured front surface of the PERC solar cell 102, which can be used for antireflection coating, and front surface passivation by reducing the optical and front side recombination loss. Further, the photovoltaic device 100 can include a second dielectric stack (112-1, 112-2) of materials including AI2O3 (112-1) of 50 nm thickness, and Si02 (112-2) of 40 nm thickness, configured on a rear surface of the PERC solar cell 102, which can be used for rear surface passivation by reducing the recombination of charge carrier. [00053] In an embodiment, the photovoltaic device 100 can include a first metallic contact (front contact 104) configured with the first surface, and a second metallic contact (rear contact 114) configured with the rear surface of the photovoltaic device 100. In an exemplary embodiment, the first metallic contact can be made of Silver, and the second metallic contact 114 can be made of aluminum. [00054] It is to be appreciated by a person skilled in the art that the disclosed above structure of the proposed photovoltaic device 100 or SILO-ED PERC solar cell provides the highest penetration of the electric-field (EF) in the silicon wafer 102-1. Therefore, it is anticipated that the SILO-ED PERC device 100 will have better control in inducing the image charges and correspondingly banding of energy bands. Also, tunneling will be easy due to low tunneling resistance in the proposed photovoltaic device 100 because of Erbium Silicide (ErSi2) having a work function ofOm=3eV. [00055] In an implementation, the proposed photovoltaic device can be fabricated using a method comprising the steps of using a p-type Si substrate 102-1 (doped with 7><1016 cm"3) of optimized thickness 150 um, and n+ type emitter 102-2 (doped with lxl019cm"3) to form the PERC cell 102. Then, the upright regular pyramid-based texturing can be been performed on the front surface of the PERC cell 102 to enhance the light trapping within the substrate 102-1. The method can further include the step of providing SiNx (70 nm)/Si02 (10 nm) as a passivation optimized stack (110-1, 110-2) on the front surface of the photovoltaic device 100 for Si surface passivation. Similarly, for the rear surface passivation of the photovoltaic device, optimized AI2O3 (50 nm)/SiNx (40 nm) stacked materials (112-1, 112-2) can be used. [00056] In an embodiment, the method can further include the step of providing a heavily doped region 108 (p+) at the back of the substrate 102-1 as the back surface field (BSF) 108 with doping 1020cm"3. Further, a thin oxide film 106 (Si02 of 1.5 nm thickness) can be used on the front surface of the photovoltaic device 100 to reduce the front surface recombination. Finally, metallization of the front and rear surface of the photovoltaic device 100 can be done with silver as cathode, and aluminum as the anode [00057] FIG. 2 illustrates an energy band profile of the proposed photovoltaic device under thermal equilibrium, where the POLO junction near the front surface is magnified as a magnified view in the inset of FIG. 2. [00058] FIG. 3 illustrates a JV comparison of the planar and textured configuration of the SILO-ED device. Silvaco TCAD tool with ATHENA as process simulator and ATLAS as device simulator was used to design the proposed SILO-ED PERC solar cell. Table 1 shows the PV parameters for the simulated SILO-ED PERC solar cell or photovoltaic device. TABLE: 1 Model Jsc (mA/cm2) Voc (V) FF (%) PCE (%) Silvaco-TCAD 42.46 0.733 85.11 26.50 [00059] While some embodiments of the present disclosure have been illustrated and described, those are completely exemplary in nature. The disclosure is not limited to the embodiments as elaborated herein only and it would be apparent to those skilled in the art that numerous modifications besides those already described are possible without departing from the inventive concepts herein. All such modifications, changes, variations, substitutions, and equivalents are completely within the scope of the present disclosure. The inventive subject matter, therefore, is not to be restricted except in the spirit of the appended claims. ADVANTAGES OF THE PRESENT INVENTION [00060] The present invention improves penetration of the electric field (EF) in silicon wafer of PERC photovoltaic devices. [00061] The present invention provides a PERC photovoltaic device, which has better control in inducing the induced charges and correspondingly the banding of energy bands. [00062] The present invention provides a PERC photovoltaic device having low tunneling resistance or improved tunneling. [00063] The present invention replaces physical doping with induction- based doping in PERC devices. [00064] The present invention provides a silicide on oxide-based electrostatically doped (SILO-ED) carrier selective contact-based passivated emitter and rear contact (PERC) photovoltaic device. We Claim: 1. A silicide on oxide-based electrostatically doped (SILO-ED) carrier selective contact-based passivated emitter and rear contact (PERC) photovoltaic device, the photovoltaic device comprising: a PERC solar cell having an upright pyramid texture at a front surface; an oxide layer of first predefined thickness configured as an interfacial layer being deposited at least partially over the front surface of the PERC solar cell, and a metal silicide having a predefined work function being directly deposited onto the interfacial oxide layer. 2. The photovoltaic device as claimed in claim 1, wherein the metal silicide is Erbium Silicide (ErSi2) with the predefined work function (<1016 cm"3, and the n+ type emitter is doped with lxl019cm"3. 6. The photovoltaic device as claimed in claim 4, wherein a rear surface of the photovoltaic device comprises a heavily doped (p+) region at the back of the substrate as a back surface field (BSF) with doping of 1020 cm"3. 7. The photovoltaic device as claimed in claim 1, wherein the photovoltaic device comprises a first dielectric stack of materials comprising SiNx of 70 nm thickness, and Si02 of 10 nm thickness, configured on the upright pyramid textured front surface of the PERC solar cell. 8. The photovoltaic device as claimed in claim 1, wherein the photovoltaic device comprises a second dielectric stack of materials comprising AI2O3 of 50 nm thickness and Si02 of 40 nm thickness, configured on a rear surface ofthePERC solar cell. 9. The photovoltaic device as claimed in claim 1, wherein the photovoltaic device comprises a first metallic contact configured with the first surface, and a second metallic contact configured with the rear surface of the photovoltaic device. 10. The photovoltaic device as claimed in claim 9, wherein the first metallic contact is made of Silver, and the second metallic contact is made of aluminum.