Description:FORM 2
THE PATENT ACT 1970
(39 of 1970)
&
The Patents Rules, 2003
COMPLETE SPECIFICATION
(See section 10 and rule 13)

1. TITLE OF THE INVENTION
SOLAR CELL BACK FILM

2. APPLICANT (S)
APPLICANT (S)
NAME NATIONALITY COUNTRY OF
RESIDENCE ADDRESS
M/S NOVANEXT ENERGIES PRIVATE LIMITED INDIA INDIA SHED NO C2/334, GIDC SHANKER TEKRI, JAMNAGAR, GUJARAT, JAMNAGAR , Pin 361004

PREMABLE TO THE DESCRIPTION
The following specification particularly describes the nature of the invention and the manner in which it is to be performed.

SOLAR CELL BACK FILM

Field of the Invention
The present invention relates to a kind of solar cell back film with high adhesiveness and processing technology. The present invention relates to a component used in solar cells, in particular to a solar cell back film with high adhesiveness, and also to a process for processing the back film.
Background of the Invention
The solar cell panel is usually a laminated structure, which mainly includes a glass surface layer, an EVA sealing layer, a solar cell sheet, an EVA sealing layer and a solar cell back film, wherein the solar cell sheet is sealed and wrapped by two layers of EVA sealing layer.
The main function of the solar cell back film is to improve the overall mechanical strength of the solar cell panel, and to prevent water vapor from penetrating into the sealing layer, which affects the service life of the cell.
In order to improve the overall performance of the backing film, there are many solutions for improving the backing film in the prior art.
For example, the Chinese patent application No. CN200710185202.8, the publication date is May 14, 2008, and the invention patent application CN101177514 discloses a solar cell back sheet and a preparation method thereof, the back sheet includes a base material and the fluoropolymer layer, the components of the fluoropolymer layer in parts by weight are: 25-45 parts of fluororesin; 1.5-3 parts of modified resin; 0.5-3 parts of polymer filler; 0.1-3 parts of inorganic filler 1 part; 50-70 parts of solvent. The above scheme has low production cost, excellent performance, high peel strength, good water blocking performance and good weather resistance.

For another example, European Patent Application No. EP1938967, published on July 2, 2008, International Application No. PCT/JP2006/312501, International Publication No. WO2007/010706, published on January 25, 2007, discloses a A solar cell back sheet with a good water impermeability sheet, the solar cell back sheet assembly has a cured coating film on at least one surface of the waterproof sheet, the cured coating film comprising a coating of a fluoropolymer with curable functional groups. The above solution improves the overall performance of the backplane by manufacturing a fluorine-containing coating and coating the fluorine-containing coating on the substrate. Although fluorine materials can improve the overall performance of the backplane, due to the characteristics of fluorine materials, they have high surface energy, hydrophobic surface, and poor bonding performance. The bonding performance between the backsheet and EVA is reduced, which makes the bonding process of the backsheet and EVA complicated.

Object of the invention
The main object of the present invention is provide a solar cell back film with high adhesion, high weather resistance, chemical resistance, high electrical insulation performance, and high water resistance .
Further the present invention to provide a processing technology capable of processing a solar cell back film with high adhesion and good overall performance.
A solar cell back film with high adhesiveness provided according to the present invention includes a base layer and a fluorine-based film layer, and a fluorosilicone film-forming layer or a silicon-titanium film-forming layer is arranged between the fluorine-based film layer and the base layer. A chemical forming film layer, the outer surface of the fluorine-based film layer has a fluorosilicone forming film forming layer or a silicon titanium forming film forming layer.
A kind of solar cell back film with high adhesiveness provided by the present invention also has the following subsidiary technical features:

(i) The thickness of the fluorosiliconized film-forming layer or the silicon-titanated film-forming layer is 0.01 micrometers to 5 micrometers.
(ii) The base layer is a PET base layer.
(iii) The base layer is a polymer alloy material base layer formed by hot-melt blending of PET and PBT or PEN, wherein the content of PBT or PEN is 1-50 parts by weight.
(iv) The base layer is formed by adding inorganic oxides selected from silica, titania, alumina or zirconia to PET, wherein the content of the inorganic oxides is 1-35 parts by weight.
(v) The base layer is an ultra-fine closed-cell foam layer.
(vi) The thickness of the base layer is 0.1 mm to 10 mm.
(v) The fluorine-based film layer is a tetrafluoroethylene-based film layer or a film layer formed by a terpolymer of tetrafluoroethylene, hexafluoropropylene and vinylidene fluoride or a chlorotrifluoro-based film layer.
(vi) The content of the fluorine resin in the fluorine-based film layer is 30-95 parts by weight.
(vii) The surface of the base layer or the fluorine-based film layer is subjected to plasma fluorosiliconization treatment to form the fluorosiliconization film-forming layer.
(viii) The fluorine-based film layer or the base layer is subjected to plasma titanation treatment to form the titanation film layer.

Statement of the Invention
According to the processing technology of a kind of solar cell back film with high adhesiveness provided by the present invention, it mainly comprises the following steps:
(1). Plasma treatment is performed on the surface of the base layer to activate the surface of the base layer;
(2), Spray or roll or dip fluorosilicone compound or silicon-titanium compound on the activated base layer, and heat it at 20-200 degrees Celsius for 1-600 seconds to form a fluorosiloxane film-forming layer or a silicon-titanium film-forming layer on the surface of the base layer. Floor;
(3). The base layer containing the fluorosilicone film-forming layer or the silico-titanium-forming film-forming layer is heated to 50-200 degrees Celsius, and then double-sided or single-sided coating the fluorine-based film layer with a thickness of 5-200 microns to form a substrate;
(4). Plasma treatment is performed on the surface of the substrate containing the fluorine-based film layer to activate the surface of the substrate;
(5), Spray or roll or dip fluorosilicone compound or silicon-titanium compound on the activated substrate, and heat it at 20-200 degrees Celsius for 1-600 seconds to form a fluorosilicone film-forming layer or silicon-titanium on the surface of the substrate. film-forming layer.
According to the processing technology of a solar cell back film with high adhesiveness provided by the present invention, it can also mainly include the following steps:
(1). Plasma treatment is performed on the two surfaces of the fluorine-based film to activate the surface of the fluorine-based film;
(2). Spray or roll or dip fluorosiloxane compound or silicon-titanium compound on the two surfaces of the activated fluorine-based film layer, and heat it at 20-200 degrees Celsius for 1-600 seconds to form fluorine on the two surfaces of the fluorine-based film layer. Siliconized film-forming layer or silicon-titanated film-forming layer;
(3), After heating the base layer to 50-200 degrees Celsius, double or single side is covered with a fluorine-based film layer containing a fluorosilicone film-forming layer or a silicon-titanium film-forming layer.
Compared with the prior art, the solar cell back film with high adhesiveness provided by the present invention has the following advantages: firstly, the present invention performs fluorosiliconization or silicotitanization on the fluorine-based film layer and/or the base layer treatment to form a fluorosiloxane film-forming layer or a silico-titanium-forming film-forming layer, so that the present invention has better bonding performance, denser film layer, improved barrier properties, especially better barrier and moisture-proof properties for water vapor. Good, better electrical performance and weather resistance; secondly, there is no difference between the two surfaces of the back mold after the above treatment, which can be applied to the bonding requirements of different types of adhesives, which is convenient for the lamination of solar cell modules without distinguishing the front and back, which is convenient to use .
The processing technology of the solar cell back film with high adhesiveness provided by the present invention has the following advantages: the battery back film produced by the processing technology of the present invention has better adhesiveness, dense film layer, and improved barrier performance, and this processing technology can realize continuous production and improve production efficiency.
The main object of the present invention system is easy transport system , where the user can customize their transport pallet size as per the requirements.
The further object of the present invention system is easy to replace and easy to assemble.
The invention system is easy to carry heavy weight with affordable price.

BRIEF DESCRIPTION OF THE DRAWINGS
The structure and the technical means adopted by the present invention to achieve the above and other objects can be best understood by referring to the following detailed description of the preferred embodiments and the accompanying drawings,
FIG. 1 represents a schematic structural diagram of an embodiment of the present invention.
FIG. 2 represents a schematic structural diagram of another embodiment of the present invention.
FIG. 3 represents a schematic structural diagram of still another embodiment of the present invention.
FIG. 4 represents a schematic structural diagram of another embodiment of the present invention.
Detailed description of the invention
Before explaining the present invention in detail, it is to be understood that the invention is not limited in its application to the details of the construction and arrangement of parts illustrated in the accompanying drawings. The invention is capable of other embodiments, as depicted in different figures as described above and of being practiced or carried out in a variety of ways. It is to be understood that the phraseology and terminology employed herein is for the purpose of description and not of limitation.
The back film in the prior art is usually covered with DuPont Tendlar film on both sides of the PET base layer, and the Tendlar film is formed by a casting process and then stretched.
The film is a film formed by non-thermal melting, there are air gaps between the swollen particles, and the mechanical strength of the film is low.
It is easy to form the weak point of the composite film.
The water vapor transmission rate of the film is as high as 4.2g/m2d, which causes the photoelectric conversion efficiency of the solar cell to decay rapidly and shortens the service life of the solar cell.
Referring to FIG. 1 , a solar cell back film with high adhesiveness provided according to the present invention includes a base layer 3 and a fluorine-based film layer 2 , and there is fluorine silicon oxide between the fluorine-based film layer 2 and the base layer 3 The alkylation film-forming layer 1, the outer surface of the fluorine-based film-forming layer 2 has a fluorosiliconized film-forming layer 1.
In the present invention, the fluorine-based film layer 2, the base layer 3 and the outer surface of the fluorine-based film layer 2 are all provided with a fluorosilicone film-forming layer 1, which not only makes the adhesion between the fluorine-based film layer 2 and the base layer 3 The junction is stronger and allows the backing film of the present invention to be easily bonded to other solar cell modules.
The fluorine-based film layer 2 in this embodiment is a two-layer structure, which is located on both sides of the base layer 3 respectively. Therefore, the structure of this embodiment is a seven-layer structure, that is, the fluorosiloxanes are sequentially laminated to form a film Layer 1 , fluorine-based film layer 2 , fluorosiliconized film-forming layer 1 , base layer 3 , fluorosiliconized film-forming layer 1 , fluorine-based film layer 2 , and fluorosiliconized film-forming layer 1 .
This seven-layer structure makes it more convenient to use the back film of the present invention without distinguishing the front and back sides.
At the same time, the barrier property of the present invention is better, and the overall moisture-proof performance, electrical performance and weather resistance performance are better.
Of course, the present invention can also be a four-layer structure, that is, a fluorosilicone film-forming layer, a fluorine-based film layer, a fluorosilicone film-forming layer and a base layer that are sequentially laminated together, but this structure requires Identify positive and negative.
Referring to FIG. 2 , the back film structure of the present invention can also be a five-layer structure, that is, a fluorosilicone film-forming layer 1, a fluorine-based film layer 2, a fluorosilicone film-forming layer 1, The base layer 3, the fluorosiliconized film-forming layer 1.
In the above-mentioned embodiment of the present invention, the thickness of the fluorosilicone film-forming layer 1 is 0.01 µm to 5 µm, preferably, the thickness is 0.1 µm to 2 µm.
The specific value can be selected according to the thickness of the base layer and the fluorine-based film layer 0.05 µm, 0.1 µm, 0.3 µm, 0.8 µm, 1.2 µm, 1.8 µm, 2 µm, 2.5 µm, 3 µm and so on.
The choice of thickness here should meet the needs of bonding between layers, and at the same time improve the overall performance of the back film.
The base layer 3 in the present invention can be a PET base layer, wherein PET is polyethylene phthalate.
The base layer 3 of the present invention can also be a polymer alloy material base layer formed by hot-melt blending of PET and PBT, wherein PBT is polybutylene terephthalate, and PET is modified by adding PBT, thereby improving the overall performance of the base layer.
The content of PBT is 1-50 parts by weight, preferably 8-20 parts.
Specific values can be 1 part, 4 parts, 8 parts, 12 parts, 15 parts, 18 parts, 20 parts, 25 parts, 30 parts, 40 parts and 50 parts.
The base layer 3 of the present invention can also be a polymer alloy material base layer formed by hot-melt blending of PET and PEN, wherein PEN is polyethylene naphthalate, and PET is modified by adding PEN, thereby improving the performance of the base layer. the overall performance of the base layer.
The content of PEN is 1-50 parts by weight, preferably 8-20 parts.
Specific values can be 1 part, 4 parts, 8 parts, 12 parts, 15 parts, 18 parts, 20 parts, 25 parts, 30 parts, 40 parts and 50 parts.
After the base layer 3 of the present invention is alloyed with PET and PBT or PEN, the crystallinity, processability and flatness are improved, so that the plasma uniformity of the base layer surface is improved, and the active groups are dispersed evenly, which is suitable for subsequent silicification and fluorosilicone. The large area of alkylation is uniformly and firmly covered with a reliable guarantee.
The base layer 3 in the present invention is formed by adding inorganic oxides to PET, wherein the content of inorganic oxides is 1-35 parts by weight, preferably 10-20 parts.
Specific values can be 1 part, 5 parts, 10 parts, 12 parts, 16 parts, 20 parts, 25 parts, 30 parts and 35 parts.
Wherein, the inorganic oxide can be silicon dioxide, titanium oxide, aluminum oxide, and zirconium oxide.
The base layer 3 in the present invention can also be made of PE, and an ultra-fine closed-cell foam layer is formed by an ultra-fine closed-cell foaming process.
The base layer of this structure has good supporting force, is light in weight, is easy to bend, and can be applied to curved solar panels.
In the above-mentioned base layer 3 given by the present invention, the thickness of the base layer 3 is 0.1mm-10mm, wherein the preferred thickness of the non-foamed base layer is 0.2-0.3mm, and the specific values are 0.2mm, 0.22mm, 0.25mm, 0.28mm mm, 0.3mm.
The thickness of the foamed base layer is 1-3mm, and the specific values are 1mm, 2mm, and 3mm.
In the above-mentioned embodiment given by the present invention, the fluorine-based film layer 2 is a tetrafluoroethylene film layer, and this film layer can be selected from JOLYWOOD FFC film, or can be a tetrafluoroethylene (TFE) homopolymer film layer .
The fluorine-based film layer 2 of the present invention can also be a film layer formed by a terpolymer of tetrafluoroethylene, hexafluoropropylene and vinylidene fluoride, that is, a THV film layer.
The fluorine-based film layer 2 of the present invention may also be a chlorotrifluoro-based film layer.
The content of the fluorine resin in the fluorine-based film layer 2 of the present invention is 30-95 parts by weight, preferably 50-80 parts.
The specific values are 30 parts, 40 parts, 50 parts, 60 parts, 70 parts, 80 parts, and 95 parts.
layer 1 . The film-forming layer is called the fluorosilicone film-forming layer 1 in the present invention.
The processing technology of a solar cell back film with high adhesiveness provided by the present invention mainly includes the following steps:
(1)2. Perform plasma treatment on the surface of the base layer 3 to activate the surface of the base layer 3. The plasma treatment process used may be a relatively mature plasma treatment process in the prior art.
(2), Spray the fluorosilicone compound on the activated base layer 3, and bake it at 100 degrees Celsius for 20 seconds to form a fluorosilicone film-forming layer on the surface of the base layer; here, the fluorosilicone compound can also be rolled or dipped. It is coated on the surface of the base layer, so that the surface of the base layer forms a fluorosilicone film-forming layer.
(3), Heat the base layer containing the fluorosiloxane film-forming layer to 90 degrees Celsius, and then coat the fluorine-based film layer with a thickness of 20 microns on both sides to form the substrate; of course, the fluorine-based film layer can also be coated on one side.
(4)2. Plasma treatment is performed on the surface of the substrate containing the fluorine-based film layer to activate the surface of the substrate; the adopted plasma treatment process is the same as that in the first step.
(5) Spray fluorosilicone compound on the activated substrate, heat and bake at 100 degrees Celsius for 20 seconds to form a fluorosilicone film-forming layer on the surface of the substrate.
Here, the fluorosilicone compound can also be coated on the surface of the base layer by rolling or dipping, so as to form a fluorosilicone film-forming layer on the surface of the base layer.
The molecular formula of the fluorosiloxane compound used in the present invention is Rf-Si(OR)3, and this compound can be purchased from the market as a finished product.
This fluorosilicone compound is an organic compound, which can be solid or liquid, and is mixed with other liquids.
Its characteristics make it have an organic affinity at one end and an inorganic affinity at the other end, thereby effectively improving the adhesion between the layers.
The back film is processed through the above-mentioned processing technology, and the back film can be sold as a finished product and used in a solar cell panel to be bonded with other components in the solar cell panel.
In step (2) and step (5) of the present invention, the heating temperature used can be 20-200 degrees Celsius, the heating and baking time can be 1-600 seconds, the preferred range of heating temperature is 80-130 degrees Celsius, and the heating time For 10-60 seconds.
Among them, the numerical selection can be based on different materials of each layer, and different heating temperatures and times can be selected.
In addition, the higher the heating temperature, the shorter the heating time used.
The specific values can be as follows: the heating temperature is 20 degrees Celsius, and the heating time is 600 seconds; the heating temperature is 40 degrees Celsius, and the heating time is 300 seconds; the heating temperature is 60 degrees Celsius, and the heating time is 100 seconds; the heating temperature is 80 degrees Celsius, and the heating time is 40 seconds; the heating temperature is 120 degrees Celsius, and the heating time is 15 seconds; the heating temperature is 150 degrees Celsius, and the heating time is 10 seconds; the heating temperature is 200 degrees Celsius, and the heating time is 1 second.
In step (3) of the present invention, the base layer can be heated to 50-200 degrees Celsius, preferably 80-150 degrees Celsius, and the specific values can be 50 degrees Celsius, 60 degrees Celsius, 80 degrees Celsius, 100 degrees Celsius, 120 degrees Celsius, 150 degrees Celsius, 180 degrees Celsius, 200 degrees Celsius.
The thickness of the fluorine-based film layer is 5-200 microns, preferably 10-40 microns.
The specific value can be 5 mm, 10 mm, 15 mm, 25 mm, 35 mm, 40 mm, 60 mm, 100 mm, 150 mm, 200 mm.
For this embodiment, the following processing technology can also be used, which mainly includes the following steps
(1)2. Plasma treatment is performed on the surface of the fluorine-based film layer 2 to activate the surface of the fluorine-based film layer; the adopted plasma treatment process may be a relatively mature plasma treatment process in the prior art.
(2). Spray the fluorosilicone compound on both sides of the activated fluorine-based film layer 2, and heat and bake at 100 degrees Celsius for 20 seconds to form a fluorosilicone film-forming layer on both surfaces of the fluorine-based film layer; The siloxane compound can also be coated on the surface of the fluorine-based film layer by rolling or dipping, so that the two surfaces of the fluorine-based film layer form a fluorosilicone film-forming layer.
(3) After heating the base layer 3 to 90 degrees Celsius, both sides are covered with a fluorine-based film layer containing a fluorosilicone film-forming layer.Of course, a fluorine-based film layer can also be coated on one side.
In step (2) of the present invention, the heating temperature used can be 20-200 degrees Celsius, the heating and baking time can be 1-600 seconds, the preferred range of heating temperature is 80-130 degrees Celsius, and the heating time is 10-60 seconds .
Among them, the numerical selection can be based on different materials of each layer, and different heating temperatures and times can be selected.
In addition, the higher the heating temperature, the shorter the heating time used.
The specific values can be as follows: the heating temperature is 20 degrees Celsius, and the heating time is 600 seconds; the heating temperature is 40 degrees Celsius, and the heating time is 300 seconds; the heating temperature is 60 degrees Celsius, and the heating time is 100 seconds; the heating temperature is 80 degrees Celsius, and the heating time is 40 seconds; the heating temperature is 120 degrees Celsius, and the heating time is 15 seconds; the heating temperature is 150 degrees Celsius, and the heating time is 10 seconds; the heating temperature is 200 degrees Celsius, and the heating time is 1 second.
In step (3) of the present invention, the base layer can be heated to 50-200 degrees Celsius, preferably 80-150 degrees Celsius, and the specific values can be 50 degrees Celsius, 60 degrees Celsius, 80 degrees Celsius, 100 degrees Celsius, 120 degrees Celsius, 150 degrees Celsius, 180 degrees Celsius, 200 degrees Celsius.
The thickness of the fluorine-based film layer is 5-200 microns, preferably 10-40 microns.
The specific value can be 5 mm, 10 mm, 15 mm, 25 mm, 35 mm, 40 mm, 60 mm, 100 mm, 150 mm, 200 mm.
Referring to FIG. 3 , according to another embodiment provided by the present invention, it includes a base layer 3 and a fluorine-based film layer 2 . The outer surface of the fluorine-based film layer 2 has a titanium-siliconized film layer 4 .
In the present invention, the fluorine-based film layer 2, the base layer 3 and the outer surface of the fluorine-based film layer 2 are all provided with a silicon-titanium chemical film-forming layer 4, which not only makes the bonding between the fluorine-based film layer 2 and the base layer 3 easier It is strong and makes the back film of the present invention easy to bond with other solar cell modules.
The fluorine-based film layer 2 in this embodiment has a two-layer structure, which are located on both sides of the base layer 3 respectively. Therefore, the structure of this embodiment is a seven-layer structure, that is, the silico-titanium film-forming layers 4 are sequentially laminated together. , Fluorine-based film layer 2, Si-Ti film-forming layer 4, base layer 3, Si-Ti film-forming layer 4, Fluorine-based film layer 2 and Si-Ti film-forming layer 4.
This seven-layer structure makes it more convenient to use the back film of the present invention without distinguishing the front and back sides.
At the same time, the barrier property of the present invention is better, and the overall moisture-proof performance, electrical performance and weather resistance performance are better.
Of course, the present invention can also be a four-layer structure, that is, the titanium-silicon layer, the fluorine-based layer, the titanium-silicon layer, and the base layer that are stacked together in sequence, but the front and back sides of this structure should be distinguished during use.
Referring to FIG. 4 , the present invention can also be a five-layer structure, that is, a titanium-silicon layer 4, a fluorine-based layer 2, a titanium-silicon layer 4, a base layer 3, and a titanium-silicon layer that are sequentially laminated together. Layer 4.
In the above-mentioned embodiment of the present invention, the thickness of the silicidation film-forming layer 4 is 0.01 µm to 5 µm, preferably, the thickness is 0.1 µm to 2 µm.
The specific value can be selected according to the thickness of the base layer and the fluorine-based film layer 0.05 µm, 0.1 µm, 0.3 µm, 0.8 µm, 1.2 µm, 1.8 µm, 2 µm, 2.5 µm, 3 µm and so on.
The choice of thickness here should meet the needs of bonding between layers, and at the same time improve the overall performance of the back film.
The base layer 3 and the fluorine-based film layer 2 used in the embodiment are the same as those in the above-mentioned embodiment, and the specific content will not be repeated here.
In the embodiment given in the present invention, the silicidation film-forming layer 4 is a film-forming layer formed by plasma titania treatment on the surface of the base layer 3 or the fluorine-based film layer 2, that is, In the present invention, the titanium-siliconized film-forming layer 4 is called.
The processing technology of the present embodiment of the present invention mainly comprises the following steps:
(1)2. Plasma treatment is performed on the surface of the base layer 3 to activate the surface of the base layer, and the adopted plasma treatment process may be a relatively mature plasma treatment process in the prior art.
(2). Spray the silicon-titanium compound on the base layer 3 after activation, and bake it at 110 degrees Celsius for 18 seconds to form a silicon-titanium film-forming layer on the surface of the base layer; here, the silicon-titanium compound can also be coated on the base layer by rolling or dipping. 3, so that the surface of the base layer forms a silicidation film layer 4.
(3)2. Heat the base layer containing the titanium-silicon chemical film layer to 90 degrees Celsius, and then coat the fluorine-based film layer with a thickness of 20 microns on both sides to form the base material; of course, the fluorine-based film layer can also be coated on one side.
(4)2. Plasma treatment is performed on the surface of the substrate containing the fluorine-based film layer to activate the surface of the substrate; the adopted plasma treatment process is the same as that in the first step.
(5)
. Spray the silicon-titanium compound on the activated substrate, and heat and bake it at 110 degrees Celsius for 18 seconds to form a silicon-titanium film-forming layer on the surface of the substrate.
Here, the silicon-titanium compound can also be coated on the surface of the base layer by rolling or dipping, so that a silicon-titanium compound film-forming layer is formed on the surface of the base layer.
Another processing technique can also be used for this embodiment, which mainly includes the following steps
(1)2. Plasma treatment is performed on the surface of the fluorine-based film layer 2 to activate the surface of the fluorine-based film layer; the adopted plasma treatment process may be a relatively mature plasma treatment process in the prior art.
(2), Spray the silicon-titanium compound on both sides of the activated fluorine-based film, and bake it at 110 degrees Celsius for 18 seconds to form a silicon-titanium film on the surface of the fluorine-based film; here, the silicon-titanium compound can also be applied by roller coating or The surface of the fluorine-based film is coated on the surface of the fluorine-based film by means of dipping, so that the two surfaces of the fluorine-based film are formed with a titanium-silicon-forming film.
(3) After heating the base layer to 90 degrees Celsius, double-sided cladding a fluorine-based film layer containing a silicon-titanium chemical film-forming layer.
Of course, a fluorine-based film layer can also be coated on one side.
The molecular formula of the silicon-titanium compound used in this embodiment is: SiOx, TiO2, and this compound can be purchased from the market as a finished product.
This silicon-titanium compound is also an organic compound, which can be solid or liquid, and is mixed with other liquids.
Its characteristics make it have an organic affinity at one end and an inorganic affinity at the other end, thereby effectively improving the adhesion between the layers.
The present invention can realize the continuous production of back film processing by adopting the above-mentioned processing technology, and improve the production efficiency.
Compared with similar products abroad, the product of the present invention has the following data:
Characteristic unit Japanese product American product Surface tension mN/cm 30-40 40 45 or more Adhesion to EVA N/10mm 20-40 20-40 50-100 Water vapor transmission rate g/m<sup>2< /sup>.d 1.6 4.3 0.1 or less

While, the invention has been described with respect to the given embodiment, it will be appreciated that many variations, modifications and other applications of the invention may be made. However, it is to be expressly understood that such modifications and adaptations of the present invention, as set forth in the following claims.

, Claims:I claim
1. A solar cell back film with high adhesiveness, characterized in that it comprises the following steps:
(i) Plasma treatment is performed on the surface of the base layer to activate the surface of the base layer;
(ii) spray or roll or dip fluorosilicone compound or silicon-titanium compound on the activated base layer, and heat it at 20-200 degrees Celsius for 1-600 seconds to form a fluorosiloxane film-forming layer or a silicon-titanium film-forming layer on the surface of the base layer. Floor;
(iii) the base layer containing the fluorosilicone film-forming layer or the silico-titanium-forming film-forming layer is heated to 50-200 degrees Celsius, and then double-sided or single-sided overlay a fluorine-based film layer with a thickness of 5-200 microns to form a substrate;
(iv) plasma treatment is performed on the surface of the substrate containing the fluorine-based film layer to activate the surface of the substrate;
(v) spray or roll or impregnate the fluorosilicone compound or silicon-titanium compound on the activated substrate, and heat it at 20-200 degrees Celsius for 1-600 seconds to form a fluorosiloxane film-forming layer or silicon-titanium on the surface of the substrate. film-forming layer.

2. A solar cell back film with high adhesiveness, characterized in that it
comprises the following steps:
(i) plasma treatment is performed on the two surfaces of the fluorine-based film to activate the surface of the fluorine-based film;
(ii) spray or roll or dip fluorosiloxane compound or silicon titanium compound on the two surfaces of the activated fluorine-based film layer, and heat it at 20-200 degrees Celsius for 1-600 seconds, so that the two surfaces of the fluorine-based film layer form fluorine Siliconized film-forming layer or silicon-titanated film-forming layer;
(iv) after heating the base layer to 50-200 degrees Celsius, double or single side is covered with a fluorine-based film layer containing a fluorosilicone film-forming layer or a silicon-titanium film-forming layer.</sup>

3. A solar cell back film with high adhesiveness prepared by the processing technology of claim 1 or 2, comprising a base layer and a fluorine-based film layer, characterized in that: there is fluorine silicon between the fluorine-based film layer and the base layer an oxyalkylation film-forming layer or a silico-titanium-forming film-forming layer, the outer surface of the fluorine-based film layer has a fluorosilicone-forming film-forming layer or a silico-titanating film-forming layer.

4. The solar cell back film with high adhesiveness according to claim 3, wherein the thickness of the fluorosilicone film-forming layer or the silico-titanium film-forming layer is 0.01 micrometers to 5 micrometers and the base layer is a PET base layer.

5. The solar cell back film with high adhesiveness according to claim 3, wherein the base layer is a polymer alloy material base layer formed by hot-melt blending of PET and PBT or PEN, wherein PBT or PEN the content is 1-50 parts by weight.

6. A solar cell back film with high adhesiveness as claimed in claim 3, wherein the base layer is an inorganic oxide selected from silica, titania, alumina or zirconia added to PET formed, wherein the content of the inorganic oxide is 1-35 parts by weight.

7. The solar cell back film with high adhesiveness according to claim 3, wherein the base layer is an ultra-fine closed-cell foam layer and the base layer has a thickness of 0.1 mm to 10 mm.

8. The solar cell back film with high adhesiveness according to claim 3, wherein the fluorine-based film layer is a tetrafluoroethylene film layer or a tetrafluoroethylene, hexafluoropropylene and vinylidene fluoride film The film layer formed by the terpolymer or the chlorotrifluoro-based film layer.

9. The solar cell back film with high adhesiveness according to claim 3, wherein the content of the fluorine resin in the fluorine-based film layer is 30-95 parts by weight wherein the surface of the base layer or the fluorine-based film layer is treated with plasma fluorosiloxane to form the fluorosilicon Alkylation film-forming layer

10. The solar cell back film with high adhesiveness according to claim 3, wherein the fluorine-based film layer or the base layer is subjected to plasma titanation treatment to form the titanation film layer.

Dated 18th October 2022

For,
NOVANEXT ENERGIES PRIVATE LIMITED

__________________________
HABIB SAIFUDDIN PIPARMENTWALA
Director

To,
The Controller of Patents
The Patent Office, at Mumbai