The present disclosure relates to the field of electric amplification. More particularly, it relates to a system and method for electricity amplification by magnetic field generation.
BACKGROUND
[0002] Background description includes information that may be useful in understanding the present disclosure. It is not an admission that any of the information provided herein is prior art or relevant to the presently claimed disclosure, or that any publication specifically or implicitly referenced is prior art. [0003] Electrons have a charge that causes electrical conduction and a spin that causes magnetism. Now-a-days, there has been a lot of focus on the development of spintronic devices, which actively employ the features of spin in addition to electronics that use electron charge. A spin injection element, for example, has been proposed as a spin injection tunnel magneto-resistive element. Furthermore, an electromotive force is generated in the domain wall section of a domain wall placed in a ferromagnetic material when it is moved. However, the existing prior-arts do not focus on electricity amplification.
[0004] There is, therefore, a need to provide an efficient, optimum, and cost-effective solution that can obviate the above-mentioned limitations, and provide a system and method for electricity amplification.
OBJECTS OF THE PRESENT DISCLOSURE
[0005] Some of the objects of the present disclosure, which at least one
embodiment herein satisfies are as listed herein below.
[0006] It is an object of the present disclosure to provide a system and method
for amplification of electricity.
[0007] It is an object of the present disclosure to provide a system and method
that facilitates entrapping of electrons using a single electron transistor.

[0008] It is an object of the present disclosure to provide a system and method that enables a user to determine spin state of the entrapped electrons by magnetic deflection of the electrons using a Stern-Gerlach apparatus. [0009] It is an object of the present disclosure to provide a system and method that enables controlling the spin state of the electrons by a magnetic field to the entrapped electron.
SUMMARY
[0010] The present disclosure relates to the field of electric amplification. More particularly, it relates to a system and method for electricity amplification by magnetic field generation.
[0011] According to an aspect, the present disclosure pertains to a method for electricity amplification by magnetic field generation, the method comprising the steps of : entrapping, using a single electron transistor, electrons from flow of current, wherein the current is configured to flow from a first electrode of the single electron transistor to a second electrode of the single electron transistor; identifying, using Stern-Gerlach module, spin of the entrapped electrons, wherein the spin of the entrapped electrons pertain to any of a first spin orientation and a second spin orientation; filtering, through an electron spin filter, electrons having the first spin orientation; and altering, through a magnetic field generator, spin of the electrons from the first spin orientation to the second spin orientation in presence of a magnetic field; wherein, due to magnetic repulsion, electrons having the first spin orientation push each other in an outward direction, and electrons having the second spin orientation pull each other inside, thereby amplifying electricity. [0012] In an aspect, the method comprises: filtering, through an electron spin filter, electrons having the second spin orientation; and altering, through a magnetic field generator, spin of the electrons from the second spin orientation to the first spin orientation in presence of the magnetic field.
[0013] In an aspect, the single electron transistor corresponds to a field effect transistor configured to have an isolated conducting channel, wherein the field effect transistor includes a first tunnel junction between the first electrode and the

conducting channel and a second tunnel junction between the second electrode and the conducting channel, wherein movement of the electron through the isolated conducting channel is controlled by a third electrode.
[0014] In an aspect, the method comprises entrapping of the electron in the isolated conducting channel of the single electron transistor when predetermined voltage is applied to the third electrode.
[0015] In an aspect, the applied magnetic field is of a predetermined strength, wherein photons correspond to any of the first spin orientation and the second spin orientation, wherein, interaction between the photons and electrons results in a first or a second outcome.
[0016] In an aspect, the first outcome corresponds to preservation of spin orientation of the electrons and wherein the second outcome corresponds to inversion of spin orientation of the electrons, wherein preservation and inversion of spin orientations result from positive alignment and negative alignment of the electrons with the photons.
[0017] In an aspect, the first spin orientation pertains to +1/2 spin, and the second spin orientation pertains to -1/2 spin.
[0018] According to another aspect, the present disclosure pertains to a system for electricity amplification by magnetic field generation, the system comprises: a single electron transistor configured to entrap electrons from flow of current, wherein the current is configured to flow from a first electrode of the single electron transistor to a second electrode of the single electron transistor; a Stern-Gerlach module configured to identify spin of the entrapped electrons, wherein the spin of the entrapped electrons pertain to any of a first spin orientation and a second spin orientation; an electron spin filter configured to filter electrons having the first spin orientation; and a magnetic field generator configured to alter spin of the electrons from the first spin orientation to the second spin orientation in presence of a magnetic field; wherein, due to magnetic repulsion, electrons having the first spin orientation push each other in an outward direction, and electrons having the second spin orientation pull each other inside, thereby amplifying electricity.

[0019] In an aspect, the electron spin filter is made of magnetic nanostructure with zero average magnetic field.
[0020] In an aspect, the single electron transistor corresponds to a field effect transistor configured to have an isolated conducting channel, wherein the field effect transistor includes a first tunnel junction between the first electrode and the conducting channel and a second tunnel junction between the second electrode and the conducting channel, wherein movement of the electron through the isolated conducting channel is controlled by a third electrode.
BRIEF DESCRIPTION OF THE DRAWINGS
[0021] The accompanying drawings are included to provide a further
understanding of the present disclosure, and are incorporated in and constitute a
part of this specification. The drawings illustrate exemplary embodiments of the
present disclosure and, together with the description, serve to explain the principles
of the present disclosure.
[0022] The diagrams described herein are for illustration only, which thus are
not limitations of the present disclosure, and wherein:
[0023] FIG. 1 illustrates exemplary block diagram of the proposed system, in
accordance with an embodiment of the present disclosure.
[0024] FIG. 2 illustrates exemplary representation of a single electron
transistor implemented in the proposed system, in accordance with an embodiment
of the present disclosure.
[0025] FIG. 3 illustrates a circuit representing the proposed system, in
accordance with an embodiment of the present disclosure.
[0026] FIG. 4 illustrates exemplary flow diagram representing the proposed
method, in accordance with an embodiment of the present disclosure.
DETAILED DESCRIPTION
[0027] In the following description, numerous specific details are set forth in order to provide a thorough understanding of embodiments of the present invention.

It will be apparent to one skilled in the art that embodiments of the present invention may be practiced without some of these specific details.
[0028] If the specification states a component or feature "may", "can", "could", or "might" be included or have a characteristic, that particular component or feature is not required to be included or have the characteristic.
[0029] As used in the description herein and throughout the claims that follow, the meaning of "a," "an," and "the" includes plural reference unless the context clearly dictates otherwise. Also, as used in the description herein, the meaning of "in" includes "in" and "on" unless the context clearly dictates otherwise. [0030] While embodiments of the present invention have been illustrated and described in the accompanying drawings, the embodiments are offered only in as much detail as to clearly communicate the disclosure and are not intended to limit the numerous equivalents, changes, variations, substitutions and modifications falling within the spirit and scope of the present disclosure as defined by the appended claims.
[0031] Groupings of alternative elements or embodiments of the invention disclosed herein are not to be construed as limitations. Each group member can be referred to and claimed individually or in any combination with other members of the group or other elements found herein. One or more members of a group can be included in, or deleted from, a group for reasons of convenience and/or patentability. When any such inclusion or deletion occurs, the specification is herein deemed to contain the group as modified thus fulfilling the written description of all groups used in the appended claims.
[0032] Each of the appended claims defines a separate invention, which for infringement purposes is recognized as including equivalents to the various elements or limitations specified in the claims. Depending on the context, all references below to the "invention" may in some cases refer to certain specific embodiments only. In other cases it will be recognized that references to the "invention" will refer to subject matter recited in one or more, but not necessarily all, of the claims.

[0033] Various terms as used herein are shown below. To the extent a term used in a claim is not defined below, it should be given the broadest definition persons in the pertinent art have given that term as reflected in printed publications and issued patents at the time of filing.
[0034] The present disclosure relates to the field of electric amplification. More particularly, it relates to a system and method for electricity amplification by magnetic field generation.
[0035] According to an embodiment, the present disclosure pertains a method for electricity amplification by magnetic field generation, the method comprising the steps of : entrapping, using a single electron transistor, electrons from flow of current, wherein the current is configured to flow from a first electrode of the single electron transistor to a second electrode of the single electron transistor; identifying, using Stern-Gerlach module, spin of the entrapped electrons, wherein the spin of the entrapped electrons pertain to any of a first spin orientation and a second spin orientation; filtering, through an electron spin filter, electrons having the first spin orientation; and altering, through a magnetic field generator, spin of the electrons from the first spin orientation to the second spin orientation in presence of a magnetic field; wherein, due to magnetic repulsion, electrons having the first spin orientation push each other in an outward direction, and electrons having the second spin orientation pull each other inside, thereby amplifying electricity. [0036] In an embodiment, the method includes: filtering, through an electron spin filter, electrons having the second spin orientation; and altering, through a magnetic field generator, spin of the electrons from the second spin orientation to the first spin orientation in presence of the magnetic field.
[0037] In an embodiment, the single electron transistor corresponds to a field effect transistor configured to have an isolated conducting channel, wherein the field effect transistor includes a first tunnel junction between the first electrode and the conducting channel and a second tunnel junction between the second electrode and the conducting channel, wherein movement of the electron through the isolated conducting channel is controlled by a third electrode.

[0038] In an embodiment, the method includes entrapping of the electron in the isolated conducting channel of the single electron transistor when predetermined voltage is applied to the third electrode.
[0039] In an embodiment, the applied magnetic field is of a predetermined strength, wherein photons correspond to any of the first spin orientation and the second spin orientation, wherein, interaction between the photons and electrons results in a first or a second outcome.
[0040] In an embodiment, the first outcome corresponds to preservation of spin orientation of the electrons and wherein the second outcome corresponds to inversion of spin orientation of the electrons, wherein preservation and inversion of spin orientations result from positive alignment and negative alignment of the electrons with the photons.
[0041] In an embodiment, the first spin orientation pertains to +1/2 spin, and the second spin orientation pertains to -1/2 spin.
[0042] According to another embodiment, the present disclosure pertains a system for electricity amplification by magnetic field generation. The system includes: a single electron transistor configured to entrap electrons from flow of current, wherein the current is configured to flow from a first electrode of the single electron transistor to a second electrode of the single electron transistor; a Stern-Gerlach module configured to identify spin of the entrapped electrons, wherein the spin of the entrapped electrons pertain to any of a first spin orientation and a second spin orientation; an electron spin filter configured to filter electrons having the first spin orientation; and a magnetic field generator configured to alter spin of the electrons from the first spin orientation to the second spin orientation in presence of a magnetic field; wherein, due to magnetic repulsion, electrons having the first spin orientation push each other in an outward direction, and electrons having the second spin orientation pull each other inside, thereby amplifying electricity. [0043] In an embodiment, the electron spin filter is made of magnetic nanostructure with zero average magnetic field.
[0044] In an embodiment, the single electron transistor corresponds to a field effect transistor configured to have an isolated conducting channel, wherein the

field effect transistor includes a first tunnel junction between the first electrode and the conducting channel and a second tunnel junction between the second electrode and the conducting channel, wherein movement of the electron through the isolated conducting channel is controlled by a third electrode.
[0045] Referring to FIG. 1, in an embodiment, the proposed system 100 can include a single electron transistor (SET) 102 that is configured to entrap electrons from flow of current, wherein the current is configured to flow from a first electrode of the single electron transistor to a second electrode of the single electron transistor. Referring to FIG. 2, in an embodiment, the single electron transistor corresponds to a field effect transistor configured to have an isolated conducting channel, wherein the field effect transistor includes a first tunnel junction between the first electrode and the conducting channel and a second tunnel junction between the second electrode and the conducting channel, wherein movement of the electron through the isolated conducting channel can be controlled by a third electrode. [0046] By way of example, the single electron transistor may be implemented using a filed effect transistor configured to have a first, second and a third electrode. The first and the second electrodes may be coupled to a power supply unit that may be configured to provide electric power of predetermined specifications to the first, second and the third electrode of the single electron transistor. [0047] In an exemplary embodiment, the first electrode may be enabled to receive a first electrical signal of predetermined magnitude and the second electrode may be enabled to receive a second electrical signal of predetermined magnitude, the first and the second electrical signals being opposite in polarity. The negatively charged sub-atomic particle may pertain to the set of negatively charged sub-atomic particles including current flow from the first to the second electrode of the single electron transistor. Rate of the current flow from the first to the second electrode may be controlled by magnitude and polarity of a third electrical signal applied to the third electrode of the single electron transistor, the first, second and third electrical signals corresponding to either a voltage or a current signal. [0048] In an embodiment, the single electron transistor may be fabricated to facilitate formation of an isolated conducting channel between the first and the

second electrode. A first junction may be generated between the first electrode and the isolated conducting channel and a second junction may be generated between the second electrode and the isolated conducting channel. By way of example, negatively charged sub-atomic particles pertaining to current flow from the first to the second electrode may be configured to tunnel through the first and the second junction depending on the potential applied to the third electrode. The selected negatively charged sub-atomic particle may be trapped in the isolated conducting channel.
[0049] In another embodiment, the proposed system 100 can include a Stern-Gerlach module 104 that is configured to identify spin of the entrapped electrons, wherein the spin of the entrapped electrons pertain to any of a first spin orientation and a second spin orientation. In yet another embodiment, the proposed system 100 can include an electron spin filter 106 configured to filter electrons having the first spin orientation. In an embodiment, the electron spin filter can be made of magnetic nanostructure with zero average magnetic field.
[0050] In yet another embodiment, the proposed system 100 can include a magnetic field generator 108 configured to alter spin of the electrons from the first spin orientation to the second spin orientation in presence of a magnetic field; wherein, due to magnetic repulsion, electrons having the first spin orientation push each other in an outward direction, and electrons having the second spin orientation pull each other inside, thereby amplifying electricity.
[0051] In an exemplary embodiment, the magnetic field can be used to change the spin of the electrons. Further, the magnetic field consists of photons, and when a photon collides with an electron, the spin remains conserved. Let's assume the electron is in a spin up state |e=+l/2 |e=+l/2 and the photon in a spin down state |P=-1 |P=-1.
[0052] In an embodiment, meeting of the photons and electrons result in the two possibilities:
|e—»te to |e—»te and |P—►jPjP—*-J,P which means no spin flip |e—»-|e to |e—»-|e and |P—*-tPJ,P—*-|P, which is possible because +1/2—1=—1/2

[0053] In an implementation, firstly, let only spin +1/2 electrons to pass through the electron-spin filter 106, which is based on a magnetic nanostructure with zero average magnetic field and change the spin of every spin +1/2 electrons in the circuit to spin -1/2. Then, due to magnetic repulsion of electrons the electrons may push each other towards outside and spin -1/2 electrons may pull each other towards inside thus, amplifying electricity.
[0054] Referring to FIG. 3, the circuit 300 can include a battery 304, which can facilitate flow of the current through the whole circuit 300, and spin of the electrons can be changed, at block 302, in the Stern-Gerlach module 104 itself. [0055] In an illustrative embodiment, the negatively charged sub-atomic particle may be trapped by a single electron transistor. The single electron transistor may be placed in a Stern-Gerlach module (also, referred to as Stern-Gerlach apparatus). Inside the Stern-Gerlach apparatus, the first magnetic field may be applied to the trapped negatively charged sub-atomic particle. The direction and magnitude of deflection of the trapped negatively charged sub-atomic particle under the influence of the first magnetic field may be configured to determine spin state of the negatively charged sub-atomic particle. Then, the trapped negatively charged sub-atomic particle may be subjected to the beam of light of predetermined wavelength in presence of the second magnetic field of predetermined strength. Under the impact of the beam of light, the spin state of the trapped negatively charged sub-atomic particle may either be preserved or changed, the spin-state being configured to pertain to any of the clockwise and counterclockwise orientations.
[0056] In one embodiment, the spin of the electron can be determined along a predetermined axis, wherein the predetermined axis pertains to any of a three dimensional orthogonal set of axes, wherein the first spin orientation may correspond to clockwise rotation along the pre-determined axis and wherein the second spin orientation may correspond to counter-clockwise rotation along the pre-determined axis. In another embodiment, spin orientation of the entrapped electron pertains to predefined and quantized angular momentum, the spin orientation can be determined by application of a first magnetic field of

predetermined strength, wherein the first magnetic field may be inhomogeneous in nature and wherein the first magnetic field may be configured to perform deflection of the negatively charged sub-atomic particle, the amount of deflection being predetermined and based on the corresponding spin orientation. [0057] Referring to FIG. 4, the proposed method 400 can include, at block 402, entrapping, using a single electron transistor, electrons from flow of current, wherein the current is configured to flow from a first electrode of the single electron transistor to a second electrode of the single electron transistor. In an embodiment, the proposed method 400 can include, at block 404, identifying, using Stern-Gerlach module, spin of the entrapped electrons, wherein the spin of the entrapped electrons pertain to any of a first spin orientation and a second spin orientation. [0058] In an embodiment, the proposed method 400 can include, at block 406, filtering, through an electron spin filter, electrons having the first spin orientation. Further, the proposed method 400 can include, at block 408, altering, through a magnetic field generator, spin of the electrons from the first spin orientation to the second spin orientation in presence of a magnetic field; wherein, due to magnetic repulsion, electrons having the first spin orientation push each other in an outward direction, and electrons having the second spin orientation pull each other inside, thereby amplifying electricity.
[0059] In an illustrative embodiment, the single electron transistor may be implemented using field effect transistor. The first and the second electrodes of the field effect transistor may be coupled to the power supply unit that may be configured to provide electric power of predetermined specifications. By way of example, the single electron transistor may pertain to any of a metallic and a semiconducting tunneling device for a negatively charged sub-atomic particle. The first electrode may be enabled to receive the first electrical signal of predetermined magnitude and the second electrode may be enabled to receive the second electrical signal of predetermined magnitude, the first and the second electrical signals being opposite in polarity. By way of example, the first electrode may be coupled to a +5 volt supply and the second electrode may be coupled to a 0 volt supply. In another embodiment, the first electrode may be coupled to a +2.5 volt supply and the second

electrode may be coupled to a -2.5 volt supply. Rate of current flow from the first to the second electrode may be controlled by magnitude and polarity of the third electrical signal applied to the third electrode. A third junction formed between the third electrode and the isolated conducting channel between the fist and the second electrodes may be configured to exhibit capacitive electrical properties. By way of example, negative voltage signal may be coupled to the third electrode, the negative voltage signal being enabled to electrostatically influence the isolated conducting channel between the first and the second junctions. Negative charge depleted region formed due to application of the third electrical signal may be enabled to trap the negatively charged sub-atomic particle in the isolated conducting channel or quantum dot.
[0060] As used herein, and unless the context dictates otherwise, the term "coupled to" is intended to include both direct coupling (in which two elements that are coupled to each other contact each other) and indirect coupling (in which at least one additional element is located between the two elements). Therefore, the terms "coupled to" and "coupled with" are used synonymously. Within the context of this document terms "coupled to" and "coupled with" are also used euphemistically to mean "communicatively coupled with" over a network, where two or more devices are able to exchange data with each other over the network, possibly via one or more intermediary device.
[0061] The terms, descriptions and figures used herein are set forth by way of illustration only. Many variations are possible within the spirit and scope of the subject matter, which is intended to be defined by the following claims and their equivalents in which all terms are meant in their broadest reasonable sense unless otherwise indicated.
[0062] While the foregoing describes various embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof. The scope of the invention is determined by the claims that follow. The invention is not limited to the described embodiments, versions or examples, which are included to enable a person having ordinary skill in the art to

make and use the invention when combined with information and knowledge available to the person having ordinary skill in the art.
ADVANTAGES OF THE INVENTION
[0063] The present disclosure provides for a system and method for
amplification of electricity.
[0064] The present disclosure provides for a system and method that facilitates
entrapping of electrons using a single electron transistor.
[0065] The present disclosure provides for a system and method that enables a
user to determine spin state of the entrapped electrons by magnetic deflection of the
electrons using a Stern-Gerlach apparatus.
[0066] The present disclosure provides for a system and method that enables
controlling the spin state of the electrons by a magnetic field to the entrapped
electron.

We Claim:

1. A method for electricity amplification by magnetic field generation, the
method comprising the steps of :
entrapping, using a single electron transistor, electrons from flow of current, wherein the current is configured to flow from a first electrode of the single electron transistor to a second electrode of the single electron transistor;
identifying, using Stern-Gerlach module, spin of the entrapped electrons, wherein the spin of the entrapped electrons pertain to any of a first spin orientation and a second spin orientation;
filtering, through an electron spin filter, electrons having the first spin orientation; and
altering, through a magnetic field generator, spin of the electrons from the first spin orientation to the second spin orientation in presence of a magnetic field;
wherein, due to magnetic repulsion, electrons having the first spin orientation push each other in an outward direction, and electrons having the second spin orientation pull each other inside, thereby amplifying electricity.
2. The method as claimed in claim 1, wherein the method comprises:
filtering, through an electron spin filter, electrons having the second spin orientation; and
altering, through a magnetic field generator, spin of the electrons from the second spin orientation to the first spin orientation in presence of the magnetic field.
3. The method as claimed in claim 1, wherein the single electron transistor
corresponds to a field effect transistor configured to have an isolated
conducting channel, wherein the field effect transistor includes a first tunnel
junction between the first electrode and the conducting channel and a second
tunnel junction between the second electrode and the conducting channel,

wherein movement of the electron through the isolated conducting channel is controlled by a third electrode.
4. The method as claimed in claim 3, wherein the method comprises entrapping of the electron in the isolated conducting channel of the single electron transistor when predetermined voltage is applied to the third electrode.
5. The method as claimed in claim 1, wherein the applied magnetic field is of a predetermined strength, wherein photons correspond to any of the first spin orientation and the second spin orientation, wherein, interaction between the photons and electrons results in a first or a second outcome.
6. The method as claimed in claim 5, wherein the first outcome corresponds to preservation of spin orientation of the electrons and wherein the second outcome corresponds to inversion of spin orientation of the electrons,
wherein preservation and inversion of spin orientations result from positive alignment and negative alignment of the electrons with the photons.
7. The method as claimed in claim 5, wherein the first spin orientation pertains to +1/2 spin, and the second spin orientation pertains to -1/2 spin.
8. A system for electricity amplification by magnetic field generation, the system comprises:
a single electron transistor configured to entrap electrons from flow of current, wherein the current is configured to flow from a first electrode of the single electron transistor to a second electrode of the single electron transistor;
a Stern-Gerlach module configured to identify spin of the entrapped electrons, wherein the spin of the entrapped electrons pertain to any of a first spin orientation and a second spin orientation;
an electron spin filter configured to filter electrons having the first spin orientation; and
a magnetic field generator configured to alter spin of the electrons from the first spin orientation to the second spin orientation in presence of a magnetic field;

wherein, due to magnetic repulsion, electrons having the first spin orientation push each other in an outward direction, and electrons having the second spin orientation pull each other inside, thereby amplifying electricity.
9. The system as claimed in claim 9, wherein the electron spin filter is made of magnetic nanostructure with zero average magnetic field.
10. The system as claimed in claim 9, wherein the single electron transistor corresponds to a field effect transistor configured to have an isolated conducting channel, wherein the field effect transistor includes a first tunnel junction between the first electrode and the conducting channel and a second tunnel junction between the second electrode and the conducting channel, wherein movement of the electron through the isolated conducting channel is controlled by a third electrode.