1. Title of the invention

Thermo-electric devices without semiconductor peltier chips

2. Applicant

Name : Eesavyasa Technologies Pvt. Ltd.

Nationality : Indian

Address : 108-B, I.D.A. Khanapuram, Khammam(DT), Andhra Pradesh. Pin: 507002

3. Preamble to the description:

Complete specification:

Summary:

The present method of description of invention is about manufacturing method of thermoelectric devices are made upp of bismuth and antimony micro rods.

In this method of synthesis bismuth metal micro rods are doped with tellurium metal and antimony micro rods are doped with gallium. These two rods are arranged in perpendicular direction to each other and their ends are welded with graphite. This special type of welding is done with the help of robotic hand or any other similar type of method under controlled mechatronic parameters, or any similar other methods.

In this method appropriate measures are taken with the help of graphite to allow flow of electricity only but not thermal conductivity.

4. Description

In this method of invention, instead of p-type and n-type Bismuth telluride semi conductor chips or any other type of peltier chips made up of other materials, metals like Bismuth and antimony are only used to produce similar effect. Here in this concept the device produce with bismuth and antimony metals create hot and cold junction ends which are capable of giving all similar type of effects given by semiconductor peltier chips.

In this method bismuth metal will be doped with nano quantities of tellurium metal and antimony is doped with gallium. Doping of bismuth and antimony with other type of d-block elements and p-block elements of the periodic table can produce wide range of similar type of thermoelectric devises with varied potential difference.

These metals are very inexpensive and environmental friendly compared to present era of peltier chips which are ozone depleting chemicals.

The present method does not use bismuth telluride or any such metal salt semiconductor devices.

The present method of doping of bismuth to form n-type conductor with tellurium and
antimony metal to form p-type conductor on doping with gallium produces an emf difference of 5.12 volts compared to 5.5 volts produced with conventional bismuth telluride junctions.

The present method of system can use even copper and aluminium metals as mounting surfaces which can act as substrate and they can act as heat dissipation systems also which is a novel phenomenon unlike bismuth telluride based peltier chips.

In the present method of invention, the module produced can even act as substitute for silicon based solar photovoltaic cell modules, by exposing hot junction surface to solar heat or any other heat source to give refrigeration at the other end and the difference emf between two junctions can be used for power generation. As the materials in metallic state or exposed to sunlight or any other hot air generating sources the life of thermoelectric devices will nit be spoilt like conventional semiconductor devices.

Background of invention

Thermoelectric devices are used in a variety of applications including military equipments like night vision, electronic gadget cooling, portable refrigeration and inertial guidance systems. The medical community also uses these devices for hypothermia blankets, blood analyzers and tissue preparation and storage. For commercial purposes these devices are used to produce batteries, portable power generation systems, water coolers, picnic basket coolers etc. but all these are using bismuth telluride kind of p-n type junctions where the temperature difference is used for achieving the above results. It was discovered in 1821 by Thomas Seebeck and since then has been called as Seebeck Peltier effect. Despite of multiple applications possible with this type of semiconductor chips, so far limited applications are practiced due to their sensitivity towards thermal and high voltage fluctuations as well as expensive raw material inputs. The present endeavor of invention is to provide an economical an robust alternative for such semiconductor peltier chips without compromising at any point of properties exhibited

6. Brief description of drawing :

1. In the figure mentioned above Antimony micro rods doped with gallium type of
metals (1) are arranged over ceramic or aluminum surface by means of sputter
deposition or any other vapour deposition method.

2. In the figure mentioned above Bismuth micro rods doped with tellurium type of metals (2) are arranged perpendicular to the antimony micro rods and arranged over
ceramic or aluminum surface by means of sputter deposition or any other vapour deposition method.

3. When hot junction surface is produced, heat will be dissipated from the top level of module.

4. When cold junction surface is produced, cold will be dissipated from the bottom level of module.

5. Micro rods are welded with graphite special welding and covered with ceramic or aluminum or copper thin film layers to act as protective layer and also for heat dissipation.

7. Claims

1. We claim that these devices will find innumerable applications in areas of refrigeration, chilling.

2. We claim that these devices will find innumerable applications in areas of thermal heating, steam generation applications.

3. We claim that these devices will find innumerable applications in manufacturing of compressor free air conditioners, cryogenic cooling etc. as low cost alternative.

4. We claim that the present invention can be used to provide cooling effect of sensitive integrated circuits, and electronic and electrical components used in various circuits due to formation of thin film layer atomic level sputtering of bismuth and antimony metals at nano rod levels to give thermo electric effect.

5. We claim that these devices when exposed to waste heat generations at boilers, power plants, vehicle exhausts, steam utilizing machines, over the surfaces of furnaces in steel plants, metallurgy and in other areas of industrial operations, on the surfaces of domestic cooking appliances, etc are used for power generation.

6. We claim that these modules can be utilized for power generation when exposed to sun light and also for infrared light where even phonon thermal heat packets can be collected over the hot junction to give refrigeration or power generation even in absence of sunlight with certain additional electronic arrangements.

7. We claim that with the help of these systems, cold storages can be constructed which are useful in storing agricultural outputs, vegetables, meat, and transportation means where chilling is required.

8. We claim that chilling plants and cooling towers can be constructed in all industrial applications and power plants.