FORM 2 THE PATENTS ACT, 1970 (39 of 1970) & THE PATENTS RULES, 2003 COMPLETE SPECIFICATION (See section 10, rule 13) “THERMOELECTRIC DEVICE AND POWER GENERATION METHOD USING THE SAME” PANASONIC CORPORATION, a Japanese Corporation of 1006, Oaza Kadoma, Kadoma-shi, Osaka 571-8501, Japan The following specification particularly describes the invention and the manner in which it is to be performed. DESCRIPTION THERMOELECTRIC DEVICE AND POWER GENERATION METHOD USING THE SAME Technical Field [0001] The present invention relates to a thermoelectric device that converts thermal energy to electrical energy, and a power generation method using the same. Background Art [0002] Thermoelectric generation technology is a technology for directly converting thermal energy into electrical energy using the Seebeck effect, in which an electromotive force is generated in proportion to a temperature difference created between opposite ends of a substance. This technology is being used practically, for example, for a remote area power supply, an outer space power supply, and a military power supply. [0003] A conventional thermoelectric device has a configuration that is referred to as a "π -type structure" in which thermoelectric materials of a p-type semiconductor and an n-type semiconductor, having carriers of opposite signs, are combined together to be connected to each other thermally in parallel and electrically in series. [0004] Generally, the performance of a thermoelectric material used for a thermoelectric device is evaluated by a figure of merit Z, or a figure of merit ZT that is obtained by multiplying a figure of merit Z by absolute temperature to be non-dimensionalized. The figure of merit ZT can be expressed as ZT = S2T/pK, where S is a Seebeck coefficient, p is electrical resistivity, and K is thermal conductivity, of a substance. The figure S2/p, which is indicated by the Seebeck coefficient S and electrical resistivity p, is a value referred to as a power factor that is used as a measure for determining the quality of the power generation performance of the thermoelectric material and thermoelectric conversion device under a constant temperature difference. [0005] Bi2Te3 based materials such as Bi2-aSbaTe3 (0 FIG. 8 is a perspective view of a thermoelectric device according to Embodiment 2 of the present invention. As shown in FIG. 8, the thermoelectric device 200 according to Embodiment 2 has a configuration in which a plurality of laminates 20 are connected electrically to one another in series. Descriptions about, for example, the structure and function of the laminate 20 are made in Embodiment 1 and therefore are not repeated herein. [0063] As shown in FIG. 8, the thermoelectric device 200 according to Embodiment 2 includes a plurality (four) of laminates 20 disposed on the same plane in parallel with one another, a plurality (three) of interconnecting electrodes 81 for connecting them to each other, and two extracting electrodes 82 for extracting electrical power from the thermoelectric device 200 to the outside. [0064] The four laminates 20 are connected to one another with the interconnecting electrodes 81 so as to be electrically in series. The extracting electrodes 82 are provided for the ends that are not connected to other laminates 20 among the ends of the laminates 20 located at both ends of this connection body. [0065] The interconnecting electrodes 81 and the extracting electrodes 82 are not particularly limited as long as they are formed of materials with electrical conductivity. Specifically, a metal such as Cu, Ag, Mo, W, Al, Ti, Cr, Au, Pt, or In, or a nitride or oxide such as TiN, indium tin oxide (ITO), or SnO2 can be used. Furthermore, it also is possible to use a solder or a conductive paste for the interconnecting electrodes 81 and the extracting electrodes 82. The interconnecting electrodes 81 and the extracting electrodes 82 can be produced using various methods such as not only vapor phase growth methods such as a vapor deposition method and a sputtering method but also plating and thermal spraying. In electrically connecting the laminates 20 to one another, it is preferable that they be connected to one another in such a manner that the electromotive forces of the respective laminates 20 that are generated by thermal flow are not cancelled by each other. As shown in FIG. 8, it is preferable that adjacent laminates 20 be disposed in such a manner as to be opposite to each other with respect to the inchnation direction of the inclined structure. Furthermore, the thermoelectric device 200 has a configuration in which the four laminates 20 connected electrically to one another are disposed on the same plane in parallel with one another, but the thermoelectric device 200 may be of a plate shape, with the spaces between adjacent laminates 20 being filled with, for example, a resin. [0066] In driving this thermoelectric device 200, a high-temperature body and a low-temperature body are brought into close contact with the upper surface and the lower surface of the thermoelectric device 200, respectively, so that a temperature difference is generated in the device to cause thermal flow. The thermoelectric device 200 converts the thermal flow into electrical power and then outputs it to the outside through the extracting electrodes 82. In the thermoelectric device 200, an increase in mounting area for causing thermal flow in the thermoelectric device 200 allows more electrical power to be generated. In this context, the moimting area denotes the area of a region for allowing heat to come in from and go out to the outside in order to generate a temperature gradient that is required for electrical power generation. Specifically, it is the area of a region, with which the high-temperature body or the lowtemperature body is brought into close contact, in the thermoelectric device. Since an increase in the mounting area results in an increase in thermal flow inside the thermoelectric device 200 accordingly, the electromotive force generated thereby also increases. Since the thermoelectric device 200 includes a larger number of laminates 20 as compared to the thermoelectric device 100, it has a larger mounting area and therefore allows more electrical power to be generated. [0067] In the thermoelectric device 200 shown in FIG. 8, four laminates 20 are used, but the number of the laminates 20 is not limited to four as long as the number is a plural. Furthermore, a thermoelectric device may be configured with a plurahty of laminates 20 connected electrically in parallel through the interconnecting electrodes 81. The thermoelectric device 200 configured with the laminates 20 connected in series provides an effect of obtaining a high voltage while extracting electrical power. On the other hand, a thermoelectric device configvired with the laminates 20 connected in parallel provides an effect of having a lower internal resistance for the whole thermoelectric device. Moreover, the thermoelectric device configured with the laminates 20 connected in parallel has an advantage that an electrical connection can be maintained in the whole device even in the case of a partial electrical disconnection. A thermoelectric device may be configured with a suitable combination of these series and parallel connections. [0068] From the above, the thermoelectric device of the present invention has an excellent power generation performance and promotes appUcation of energy conversion between heat and electricity. Therefore, the present invention has a high industrial value. The thermoelectric device of the present invention can be used as, for example, a power generator that uses heat such as an exhaust gas exhausted fi-om automobiles or factories. Moreover, it also can be used for applications such as a small mobile power generator. EXAMPLES [0069] Hereinafter, more specific examples of the present invention are described. [0070] The thermoelectric device 100 shown in FIG. 1 was produced and the performance thereof was determined. In Example 1, the material for the thermoelectric material layer 15 was Bio.5Sb1.5Te3. Au, Ag, Cu, or Al was used as the metals 16. Au was used for the first electrode 11 and the second electrode 12. Metal plates with a size of 200 mm x 5 mm x 2 mm were bonded to both surfaces of a plate material composed of a thermoelectric material with a size of 200 mm x 5 mm X 0.2 mm by thermocompression bonding and thus a layered structure 20a including the thermoelectric material layer 15 and two metal plates 16a was obtained (see FIG. 7B). Machining to form grooves, each of which had a width of 0.5 mm, a depth of 2.2 mm, and an inclination angle of 30o: with respect to the long side of the layered structure 20a, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end mill (see FIG. 7C). Accordingly, the angle 9 shown in FIG. 2 is 30°. Furthermore, the groove portions 17a were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 20 mm. Therefore, the period x is 20 mm. Moreover, the groove portions 17a formed in the two metal plates 16a were disposed to be offset from each other by half the period. Thereafter, electrodes composed of Au were formed at both ends of the long side of the layered structure 20a by the sputtering method. Thus, the thermoelectric device 100 was produced (see FIG. 7E). [0071] With respect to the sample (the thermoelectric device) thus produced, the power generation performance thereof was evaluated. As shown in FIG. 6, one of the surfaces perpendicular to the direction Y of the thermoelectric device 100 was heated to 40°C with a ceramic heater (a high-temperature body 62), and the other was cooled to 30°C with a water-cooling apparatus (a lowtemperature body 63). Then the electromotive force and the electrical resistance between both the electrodes were measured. The thermoelectric device 100 in which copper was used as the metals 16 had an electromotive force of 18.4 mV and a resistance of 0.44 mΩ. Based on this result, the power factor was estimated to be 457 pW/cmK2. Similarly, the performance of the thermoelectric device 100 was determined, with the metals 16 and the angle 0 being varied, and the result indicated in Table 1 was obtained. [0072] [Table l] [Variations in power factor (pW/cmK2) of the device according to the angle 9 (°)] Angle θ (o) 0 10 _20 30 | 40 ~ 50 60 70 80 90 Au 0 96 261 349 341 271 176 85 22 0 Ag 0 167 421 532 501 388 248 120 31 0 Cu 0 132 349 457 441 347 224 108 28 0 Al I 0 I 64 I 179 I 247 I 247 | 199 | 130 | 63 | 17 | Q [0073] From the above result, it was found that if the metals 16 were other than Al, the thermoelectric device 100 exhibited excellent thermoelectric device properties exceeding 200 pW/cmK2 when the angle 0 was 20° to 50°. It was confirmed that the thermoelectric device 100 had a higher performance when Ag or Cu was used as the metals 16, as compared to the cases where the other metals were used. Fvurthermore, in the thermoelectric device 100, even when A1 was used as the metals 16, a performance was obtained that was equal to or higher than that of a Tc-type device containing Bi2TB3 used therein if the angle 9 was 10° to 70°. [0074] In the thermoelectric device 100 produced in the same manner as in Example 1, the performance thereof was determined, with the thickness of the metals 16 being varied. Bi1.0Sb1.0Te3 was used for the thermoelectric material layer 15. The angle 6 was 30° and the period x was 20 mm. Furthermore, the thickness of the thermoelectric material layer 15 was fixed at 0.2 mm, and the dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. Each metal 16 was Cu and the thickness thereof was varied to 0.1 mm, 0.2 mm, 0.5 mm, 1 mm, 2 mm, 5 mm, 20 mm, and 50 mm. Table 2 indicates the measurement result of the power factor of the thermoelectric device 100. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period of grooves (the period x) and the thickness of Cu (the metals 16). It was confirmed that the best performance was obtained when the ratio was around 10-1. [0075] [Table 2] [Variations in power factor (pW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of metal (Cu)] Thickness of Metal (mm) 0.1 0.2 0.5 1 2 5 20 50 Period of Grooves- Thickness 01 Cu 200:1 100:1 40:l 20:1 10:1 4:1 1:1 0.4:1 Power Factor , „,, ,,. 13 38 145 294 448 423 155 67 (μW/cmK2) [0076] Similarly, Table 3 indicates the measurement result of the power factor of the thermoelectric device 100 that was obtained when the metals 16 were Ag. As indicated in Table 3, even when the metals 16 were Ag, the power factor had the same tendency as that obtained in the case where the metals 16 were Cu. [0077] [Table 3] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of erooves and the thickness of metal (As)] Thickness of Metal (mm) 0.1 0.2 0.5 1 2 5 20 50 Period of Grooves: Thickness of Ag 200:1 100:1 40:1 20:1 10:1 4:1 1:1 0.4:1 Power Factor (μW/cmK2) 16 51 189 377 521 475 309 69 [0078] In the thermoelectric device 100 produced in the same manner as in Example 1, the performance thereof was determined, with the thickness of the thermoelectric material layer 15 being varied. The material for the thermoelectric material layer 15 was Bi1.5Sbo.5Tb3. The angle 6 was 30' and the period x was 20 mm. Each metal 16 was Cu and the thickness thereof was fixed at 10 mm. The dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. The thickness of the thermoelectric material layer 15 was varied to 0.01 mm, 0.02 mm, 0.05 mm, 0.2 mm, 0.5 mm, 1 mm, 2 mm, and 5 mm. Table 4 indicates the measurement result of the power factor of the thermoelectric device 100. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period of grooves (the period x) and the thickness of the Bii.sSbo.slbs layer (the thermoelectric material layer 15). It was confirmed that the best performance was obtained when the ratio was around 100:1. [0079] [Table 4] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of the thermoelectric material layer in the case where the metals were Cul Thickness of Bi1.5Sbo.5Tb3 layer (mm) 0.01 0.02 0.05 0.2 0.5 1 2 5 Period of Grooves: Thickness of Bi1.5Sbo.5Te3 Layer 2000:1 1000:1 400:1 100:1 40:1 20:1 10:1 4:1 Power Factor (μW/cmK2) 43 141 270 282 155 132 105 28 [0080] Similarly, Table 5 indicates the measurement result of the power factor of the thermoelectric device 100 that was obtained when the metals 16 were Ag. As indicated in Table 5, even when the metals 16 were Ag, the power factor had a similar tendency to that obtained in the case where the metals 16 were Cu. [0081] [Table 5] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of the thermoelectric material layer in the case where the metals were Ag] Thickness of Bi1.5Sbo.5Ib3 layer (mm) 0.01 0.02 0.05 0.2 0.5 1 2 5 Period of Grooves: Thickness of Bi1.5Sbo.5Te3 Layer 2000:1 1000:1 400:1 100:1 40:1 20:1 10:1 4:1 Power Factor (μW/cmK2) 53 119 225 201 112 62 31 11 [0082] The thermoelectric device 200 shown in FIG. 8 was produced and the performance thereof was determined. The thermoelectric device 200 shown in FIG. 8 is configured with four laminates 20, but the thermoelectric device 200 of Example 4 is configured with 15 laminates 20 connected electrically to one another in series. Since the remaining configuration is the same as in FIG. 8, the following descriptions are made with reference to FIG. 8. [0083] In the thermoelectric device 200 of Example 4, In was used for the interconnecting electrodes 81 and the extracting electrodes 82. In each laminate 20, the metals 16 were Cu, and the material for the thermoelectric material layer 15 was Bio.5Sb1.5Te3. Each laminate 20 was produced by the same production method as in Example 1. Cu plates with a size of 200 mm x 5 mm x 2 mm were bonded to both surfaces of a plate material composed of Bio.5Sb1.5Te3 with a size of 200 mm x 5 mm X 0.2 mm by thermocompression bonding and thus a layered structure 20a was obtained (see FIG. 7B). [0084] Next, machining to form grooves, each of which had a width of 0.5 mm, a depth of 2.2 mm, and an inclination angle of 30° with respect to the long side of the layered structure 20a, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end miU (see FIG. 7C). Accordingly, the angle 6 shown in FIG. 2 is 30o. Furthermore, the groove portions 17a were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 20 mm. Therefore, the period x is 20 mm. Moreover, the groove portions 17a formed in the two metal plates 16a were disposed to be offset from each other by half the period. [0085] A total of 15 laminates 20 were produced by the above-mentioned process. The 15 laminates 20 thus produced were disposed on the same plane in parallel to one another at intervals of 1 mm. Thereafter, 50 μm thick In foils were heated and pressurized to form the interconnecting electrodes 81 and the extracting electrodes 82, and the laminates 20 were connected electrically to one another. The 15 laminates 20 were connected to one another in series, with the directions of the electromotive forces thereof being aligned along the line of the laminate 20. The gaps between adjacent laminates 20 and the groove portions (the insvdators 17) of the laminates 20 were filled with a resin and thereby a plate-shaped thermoelectric device 200 with a size of approximately 200 mm x 80 mm x 5 mm was produced. The resistance between the extracting electrodes 82 of the thermoelectric device 200 was measured and was 9 mΩ. [0086] The power generation properties of the thermoelectric device 200 of Example 4 were evaluated. First, one surface with a size of 200 mm x 80 mm of the thermoelectric device 200 was water-cooled through an alumina plate to serve as a low-temperature body. A ceramic heater to serve as a high-temperature body was brought into close contact with the other surface of the thermoelectric device 200. With such a configuration, the lowtemperature body and the high-temperature body were maintained at 25°C and 40oC respectively. As a result, the open circuit electromotive force was 0.35 V, and the power factor obtained by estimation was a high value, specifically, 240 μW/cmK2, A maximum power of 4.4 W was extracted from the thermoelectric device 200. [0087] In Example 5, using Bi as the material for the thermoelectric material layer 15 and Au, Ag, Cu, or Al as the metals 16, the thermoelectric device 100 shown in FIG. 1 was produced. Au was used for the first electrode 11 and the second electrode 12. Metal plates with a size of 200 mm x 5 mm x 2 mm were bonded to both surfaces of a plate material composed of a thermoelectric material with a size of 200 mm x 5 mm x 0.4 mm by thermocompression bonding and thus a layered structure 20a including the thermoelectric material layer 15 and two metal plates 16a was obtained (see FIG. 7B). Next, machining to form grooves, each of which had a width of 0.5 mm, a depth of 2.4 mm, and an inclination angle of 30° with respect to the long side of the layered structure 20a, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end mill (see FIG. 7C). Accordingly, the angle 6 shown in FIG. 2 is 30o. Furthermore, the groove portions 17a were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 10 mm. Therefore, the period x is 10 mm. The groove portions 17a formed in the two metal plates 16a were disposed to be offset from each other by half the period. Thereafter, electrodes composed of Au were formed at both ends of the long side of the layered structure 20a by the sputtering method. Thus, the thermoelectric device 100 was produced (see FIG. 7E). [0088] With respect to the sample (the thermoelectric device) thus produced, the power generation performance thereof was evaluated. As shown in FIG. 6, one of the surfaces perpendicular to the direction Y of the thermoelectric device 100 was heated to 40°C with a ceramic heater (a high-temperature body 62), and the other was cooled to 30°C with a water-cooling apparatus (a lowtemperature body 63). Then the electromotive force and the electrical resistance between both the electrodes were measured. The thermoelectric device 100 in which copper was used as the metals 16 had an electromotive force of 8.7 mV and a resistance of 0.4 mΩ. Based on this result, the power factor was estimated to be 106 μW/cmK^. Similarly, the performance of the thermoelectric device 100 was determined, with the metals 16 and the angle θ being varied, and the result indicated in Table 6 was obtained. [0089] [Table 6] [Variations in power factor ( μW/cmK2) of the device according to the angle θ (o)] Angle 0 (°) 0 10 20 30 40 50 60 70 80 90 Au 0 22 60 83 83 67 44 21 6 0 Ag 0 36 94 122 117 92 59 29 8 0 Cu 0 29 78 106 104 83 54 26 7 0 Al 0 13 38 54 55 45 29 14 4 0 [0090] From the above result, it was found that if the metals 16 were other than Al, the thermoelectric device 100 exhibited excellent thermoelectric device properties of at least 40 μW/cmK2, the power factor of the π-type device containing Bi2Te3 used therein, which currently is used practically, when the angle 9 was 20o to 60o. It was confirmed that the thermoelectric device 100 had a higher performance when Ag or Cu was used as the metals 16, as compared to the cases where the other metals were used. Furthermore, in the thermoelectric device 100, even when Al was used as the metals 16, a performance was obtained that was approximately equal to or higher than that of the π-type device containing Bi2Te3 used therein if the angle 9 was 20° to 50o [0091] In the thermoelectric device 100 produced in the same manner as in Example 5, the performance thereof was determined, with the thickness of the metals 16 being varied. Bi was used for the thermoelectric material layer 15. The angle 0 was 30o and the period x was 10 mm. Furthermore, the thickness of the thermoelectric material layer 15 was fixed at 0.4 mm, and the dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. Each metal 16 was Cu and the thickness thereof was varied to 0.2 mm, 0.5 mm, 1 mm, 2 mm, 4 mm, 6 mm, 10 mm, and 15 mm. Table 7 indicates the measurement result of the power factor of the thermoelectric device 100. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period of grooves (the period x) and the thickness of Cu (the metals 16). It was confirmed that the best performance was obtained when the ratio was around 5:1. [0092] [Table 7] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of metal (Cu)] Thickness of Metal (mm) 0.2 0.5 1 2 4 8 10 15 Period of Grooves- Thickness of Cu 50:1 20:1 10:1 5:1 2.5:1 1.3:1 1:1 0.7:1 Power Factor (μW/cmK2) 11 41 80 106 94 61 51 36 [0093] Similarly, Table 8 indicates the measurement result of the power factor of the thermoelectric device 100 that was obtained when the metals 16 were Ag. As indicated in Table 8, even when the metals 16 were Ag, the power factor had the same tendency as that obtained in the case where the metals 16 were Cu. [0094] [Table 8] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of metal (Ag)] Thickness of Metal (mm) 0.2 0.5 1 2 4 8 10 15 Period of Grooves: Thickness of Ag 50:l 20:l 10:1 5:1 2.5:1 1.3:1 1:1 0.7:1 Power Factor (.pW/cmK2) 13 50 95 122 103 65 54 37 [0095] In the thermoelectric device 100 produced in the same manner as in Example 5, the performance thereof was determined, with the thickness of the thermoelectric material layer 15 being varied. The material for the thermoelectric material layer 15 was Bi. The angle 9 was 30o and the period x was 10 mm. Each metal 16 was Cu and the thickness thereof was fixed at 2 mm. The dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. The thickness of the thermoelectric material layer 15 was varied to 0.04 mm, 0.1 mm, 0.2 mm, 0.4 mm, 0.8 mm, 1 mm, 2 mm, and 3 mm. Table 9 indicates the measurement result of the power factor of the thermoelectric device 100. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period of grooves (the period x) and the thickness of the Bi layer (the thermoelectric material layer 15). It was confirmed that the best performance was obtained when the ratio was around 25:1. [0096] [Table 9] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of the thermoelectric material layer in the case where the metals were Cu] Thickness of Bi layer (mm) 0.04 0.1 02 04 08 1 2 3 Period of Grooves' Thickness of Bi Layer 250:l 100:l 50:1 25:1 12.5:1 10:1 5:1 3.3:1 Power Factor (μW/cmK2) 16 46 82 106 96 89 52 34 [0097] Similarly, Table 10 indicates the measurement result of the power factor of the thermoelectric device 100 that was obtained when the metals 16 were Ag. As indicated in Table 10, even when the metals 16 were Ag, the power factor had the same tendency as that obtained in the case where the metals 16 were Cu. [0098] [Table 10] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of the thermoelectric material layer in the case where the metals were Ag] Thickness of Bi Layer (mm) 0.04 0.1 02 0.4 0.8 1 2 3 Period of Grooves: _ , ,„_ 250:1 100:1 50:1 25:1 12.5:1 10:1 5:1 3.3:1 Thickness of Bi Layer Power Factor (μW/cmK2) 19 57 98 122 105 92 53 34 [0099] The thermoelectric device 200 shown in FIG. 8 was produced and the performance thereof was determined. The thermoelectric device 200 shown in FIG. 8 is configured with four laminates 20, but the thermoelectric device 200 of Example 8 is configured with 15 laminates 20 connected electrically to one another in series. Since the remaining configuration is the same as in FIG. 8, the following descriptions are made with reference to FIG. 8. [0100] In the thermoelectric device 200 of Example 8, In was used for the interconnecting electrodes 81 and the extracting electrodes 82. In each laminate 20, the metals 16 were Cu, and the material for the thermoelectric material layer 15 was Bi. Each laminate 20 was produced by the same production method as in Example 5. Cu plates with a size of 200 mm x 5 mm x 2 mm were bonded to both surfaces of a plate material composed of Bi with a size of 200 mm x 5 mm x 0.4 mm by thermocompression bonding and thus a layered structure 20a was obtained (see FIG. 7B). [OlOl] Next, machining to form grooves, each of which had a width of 0.5 mm, a depth of 2.4 mm, and an inclination angle of 30° with respect to the long side of the layered structure 20a, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end mill (see FIG. 7C). Accordingly, the angle 6 shown in FIG. 2 is 30°. Furthermore, the groove portions 17a were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 10 mm. Therefore, the period x is 10 mm. Moreover, the groove portions 17a formed in the two metal plates 16a were disposed to be offset from each other by half the period. [0102] A total of 15 laminates 20 were produced by the above-mentioned process. The 15 laminates 20 thus produced were disposed on the same plane in parallel to one another at intervals of 1 mm. Thereafter, 50-pm thick In foils were heated and compressed to form the interconnecting electrodes 81 and the extracting electrodes 82, and the laminates 20 were connected electrically to one another. The 15 laminates 20 were connected to one another in series, with the directions of the electromotive forces thereof being aligned along the line of the laminate 20. The gaps between adjacent laminates 20 and the groove portions (the insulators 17) of the laminates 20 were filled with a resin and thereby a plate-shaped thermoelectric device 200 with a size of approximately 200 mm x 80 mm x 5 mm was produced. The resistance between the extracting electrodes 82 of the thermoelectric device 200 was measured and was 7 mΩ. [0103] The power generation properties of the thermoelectric device 200 of Example 8 were evaluated. First, one surface with a size of 200 mm x 80 mm of the thermoelectric device 200 was water-cooled through an alumina plate to serve as a low-temperature body. A ceramic heater to serve as a high-temperature body was brought into close contact with the other surface of the thermoelectric device 200. With such a configuration, the lowtemperature body and the high-temperature body were maintained at 25^C and 40°C. As a result, the open circuit electromotive force was 0.2 V, and the power factor obtained by estimation was a high value, specifically, 96 pW/cmK2. A maximum power of 1.4 W was extracted from the thermoelectric device 200. [0104] In Example 9, using PbTe as the material for the thermoelectric material layer 15 and Au, Ag, Cu, or A1 as the metals 16, the thermoelectric device 100 shown in FIG. 1 was produced. Au was used for the first electrode 11 and the second electrode 12. Metal plates with a size of 200 mm x 5 mm x 2 mm were bonded to both surfaces of a plate material composed of a thermoelectric material with a size of 200 mm x 5 mm x 0.2 mm by thermocompression bonding and thus a layered structure 20a including the thermoelectric material layer 15 and two metal plates 16a was obtained (see FIG. 7B). [0105] Next, machining to form grooves, each of which had a width of 0.5 mm, a depth of 2.2 mm, and an inclination angle of 30° with respect to the long side of the layered structure 20a, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end mill (see FIG. 7C). Accordingly, the angle 9 shown in FIG. 2 is 30o. Furthermore, the grooves were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 20 mm. Therefore, the period x is 20 mm. The groove portions 17a formed in the two metal plates 16a were disposed to be offset from each other by half the period. Thereafter, electrodes composed of Au were formed at both ends of the long side of the layered structure 20a by the sputtering method. Thus, the thermoelectric device 100 was produced (see FIG. 7E). [0106] With respect to the sample (the thermoelectric device) thus produced, the power generation performance thereof was evaluated. As shown in FIG. 6, one of the surfaces perpendicular to the direction Y of the thermoelectric device 100 was heated to 40°C with a ceramic heater (a high-temperature body 62), and the other was cooled to 30°C with a water-cooling apparatus (a low-temperature body 63). Then the electromotive force and the electrical resistance between both the electrodes were measured. The thermoelectric device 100 in which copper was used as the metals 16 had an electromotive force of 23.5 mV and a resistance of 1.1 mΩ. Based on this result, the power factor was estimated to be 306 μW/cmK2. Similarly, the performance of the thermoelectric device 100 was determined, with the metals 16 and the angle 0 being varied, and the result indicated in Table 11 was obtained. [0107] [Table 11] [Variations in power factor (μW/cmK2) of the device according to the angle θ(o)] Angle θ (o) 0 10 20 I 30 ~ 40 50 60 70 | 80 ~ 90 Au 0 116 220 232 199 146 90 43 11 0 Ag 0 198 333 336 281 204 126 59 15 0 Cu 0 163 295 306 260 190 118 56 14 0 Al I 0 I 75 I 150 I 164 I 142 | 105 | 65 | 31 | 8 | 0 [0108] From the above result, it was found that if the metals 16 were other than Al, the thermoelectric device 100 exhibited excellent thermoelectric device properties of about four times or more of the power factor, about 40 μW/cmK2, of the π-type device containing Bi2Te3 used therein, which currently is used practically, when the angle 9 was 20° to 50°. It was confirmed that the thermoelectric device 100 had a higher performance when Ag or Cu was used as the metals 16, as compared to the cases where the other metals were used. Furthermore, in the thermoelectric device 100, even when Al was used as the metals 16, a performance was obtained that was equal to or higher than that of the π-type device containing Bi2T3 used therein if the angle 9 was 10° to 60°. [0109] In the thermoelectric device 100 produced in the same manner as in Example 5, the performance thereof was determined, with the thickness of the metals 16 being varied. PbTe was used for the thermoelectric material layer 15. The angle 9 was 30° and the period x was 20 mm. Furthermore, the thickness of the thermoelectric material layer 15 was fixed at 0.2 mm, and the dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. Each metal 16 was Cu and the thickness thereof was varied to 0.1 mm, 0.2 mm, 0.5 mm, 1 mm, 2 mm, 5 mm, 20 mm, and 50 mm. Table 12 indicates the measurement result of the power factor of the thermoelectric device 100. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period of grooves (the period x) and the thickness of Cu (the metals 16). It was confirmed that the best performance was obtained when the ratio was around 10:1. [0110] [Table 12] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of metal (Cu)] Thickness of Metal (mm) 0.1 0.2 0.5 1 2 5 20 50 Period of Grooves- Thickness of Cu 200:1 100:1 40:l 20:1 10:1 4:1 1:1 0.4:1 Power Factor , „,, ,,,, 10 33 121 229 306 263 88 36 (μW/cmk2) [0111] Similarly, Table 13 indicates the measurement result of the power factor of the thermoelectric device 100 that was obtained when the metals 16 were Ag. As indicated in Table 13, even when the metals 16 were Ag, the power factor had the same tendency as that obtained in the case where the metals 16 were Cu. [0112] [Table 13] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of metal (Ag)] Thickness of Metal (mm) 0.1 0.2 0.5 1 2 5 20 50 Period of Grooves: Thickness of Ag 200:1 100:1 40:1 20:1 10:1 4:1 1:1 0.4:1 Power Factor , „„ ,,,. 12 41 144 261 336 276 91 37 (μW/cmK2) [0113] In the thermoelectric device 100 produced in the same manner as in Example 9, the performance thereof was determined, with the thickness of the thermoelectric material layer 15 being varied. The material for the thermoelectric material layer 15 was PbTe. The angle 6 was 30° and the period x was 20 mm. Each metal 16 was Cu and the thickness thereof was fixed at 5 mm. The dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. The thickness of the thermoelectric material layer 15 was varied to 0.01 mm, 0.02 mm, 0.05 mm, 0.2 mm, 0.5 mm, 1 mm, 2 mm, and 5 mm. Table 14 indicates the measurement result of the power factor of the thermoelectric device 100. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period of grooves (the period x) and the thickness of the PbTe layer (the thermoelectric material layer 15). It was confirmed that the best performance was obtained when the ratio was around 100:1. [0114] [Table 14] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of the thermoelectric material in the case where the metals were Cu] Thickness of PbTe Layer (mm) 0.01 0.02 0.05 0.2 OS 1 2 5 Period of Grooves' Thickness of PbTe Layer 2000:1 1000:1 400:1 100:1 40:1 20:1 10:1 4:1 Power Factor 42 101 219 263 166 95 48 16 (μW/cmK2) [0115] Similarly, Table 15 indicates the measurement result of the power factor of the thermoelectric device 100 that was obtained when the metals 16 were Ag. As indicated in Table 15, even when the metals 16 were Ag, the power factor had the same tendency as that obtained in the case where the metals 16 were Cu. [0116] [Table 15] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of the thermoelectric material in the case where the metals were Ag Thickness of Pblb Layer (mm) 0.01 0.02 0.05 0.2 05 1 2 5 Period of Grooves: Thickness of Pble Layer 2000:1 1000:1 400:1 100:1 40:1 20:1 10:1 4:1 Power Factor (μW/cmK2; 52 121 248 276 170 96 48 18 [0117] The thermoelectric device 200 shown in FIG. 8 was produced and the performance thereof was determined. The thermoelectric device 200 shown in FIG. 8 is configured with four laminates 20, but the thermoelectric device 200 of Example 4 is configured with 15 laminates 20 connected electrically to one another in series. Since the remaining configuration is the same as in FIG. 8, the following descriptions are made with reference to FIG. 8. [0118] In the thermoelectric device 200 of Example 12, In was used for the interconnecting electrodes 81 and the extracting electrodes 82. In each laminate 20, the metals 16 were Cu, and the material for the thermoelectric material layer 15 was PbTe. Each laminate 20 was produced by the same production method as in Example 9. Cu plates with a size of 200 mm x 5 mm x 2 mm were bonded to both surfaces of a plate material composed of PbTe with a size of 200 mm x 5 mm x 0.2 mm by thermocompression bonding and thus a layered structure 20a was obtained (see FIG. 7B). [0119] Next, machining to form grooves, each of which had a width of 0.5 mm, a depth of 2.2 mm, and an inchnation angle of 30° with respect to the long side of the layered structure 20a, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end mill (see FIG. 7C). Accordingly, the angle 9 shown in FIG. 2 is 30°. Furthermore, the groove portions 17a were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 20 mm. Therefore, the period x is 20 mm. Moreover, the groove portions 17a formed in the two metal plates 16a were disposed to be offset from each other by half the period. [0120] A total of 15 laminates 20 were produced by the above-mentioned process. The 15 laminates 20 thus produced were disposed on the same plane in parallel to one another at intervals of 1 mm. Thereafter, 50-pm thick In foils were heated and pressurized to form the interconnecting electrodes 81 and the extracting electrodes 82, and the laminates 20 were connected electrically to one another. The 15 laminates 20 were connected to one another in series, with the directions of the electromotive forces thereof being aUgned along the line of the laminate 20. The gaps between adjacent laminates 20 and the groove portions (the insulators 17) of the laminates 20 were fiUed with a resin and thereby a plate-shaped thermoelectric device 200 with a size of approximately 200 mm x 80 mm x 5 mm was produced. The resistance between the extracting electrodes 82 of the thermoelectric device 200 was measured and was 18 mΩ. [0121] The power generation properties of the thermoelectric device 200 of Example 12 were evaluated. First, one surface with a size of 200 mm x 80 mm of the thermoelectric device 200 was water-cooled through an alumina plate to serve as a low-temperature body. A ceramic heater to serve as a high-temperature body was brought into close contact with the other surface of the thermoelectric device 200. With such a configuration, the low-temperature body and the high-temperature body were maintained at 25°C and 40°C. As a result, the open circuit electromotive force was 0. 48 V, and the power factor obtained by estimation was a high value, specifically, 230 pW/cmK2. A maximum power of 3.3 W was extracted fi*om the thermoelectric device 200. [0122] In Example 13, using Sio.8Geo.2 as the material for the thermoelectric material layer 15 and Au, Ag, Cu, or A1 as the metals 16, the thermoelectric device 100 shown in FIG. 1 was produced. Au was used for the first electrode 11 and the second electrode 12. Metal plates with a size of 200 mm x 5 mm x 2 mm were bonded to both surfaces of a plate material composed of a thermoelectric material with a size of 200 mm x 5 mm x 0.2 mm by thermocompression bonding and thus a layered structure 20a including the thermoelectric material layer 15 and two metal plates 16a was obtained (see FIG. 7B). [0123] Next, machining to form grooves, each of which had a width of 0.5 mm, a depth of 2.2 mm, and an inclination angle of 30o with respect to the long side of the layered structure 20a, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end mill (see FIG. 7C). Accordingly, the angle 0 shown in FIG. 2 is 30°. Furthermore, the groove portions 17a were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 10 mm. Therefore, the period x is 10 mm. The groove portions 17a formed in the two metal plates 16a were disposed to be offset from each other by half the period. Thereafter, electrodes composed of Au were formed at both ends of the long side of the layered structure 20a by the sputtering method. Thus, the thermoelectric device 100 was produced (see FIG. 7E). [0124] With respect to the sample (the thermoelectric device) thus produced, the power generation performance thereof was evaluated. As shown in FIG. 6, one of the surfaces perpendicidar to the direction Y of the thermoelectric device 100 was heated to 40°C with a ceramic heater (a high-temperature body 62), and the other was cooled to 30°C with a water-cooling apparatus (a low-temperature body 63). Then the electromotive force and the electrical resistance between both the electrodes were measured. The thermoelectric device 100 in which copper was used as the metals 16 had an electromotive force of 17.7 mV and a resistance of 1.5 mΩ. Based on this result, the power factor was estimated to be 124 pW/cmK2. Similarly, the performance of the thermoelectric device 100 was determined, with the metals 16 and the angle 6 being varied, and the result indicated in Table 16 was obtained. [0125] [Table 16] [Variations in power factor (μW/cmK2) of the device according to the inclination angle 6(^)1 Angle θ (°) 0 10 20 30 40 50 60 70 80 90 Au 0 61 101 101 84 61 37 18 4 _0 Ag 0 93 138 133 109 78 48 22 6 _0 Cu 0 79 126 124 103 74 45 21 5 0 Al 0 44 77 79 66 48 30 14 3 0 [0126] From the above result, it was found that if the metals 16 were other than Al, the thermoelectric device 100 exhibited excellent thermoelectric device properties of about three times or more of the power factor, about 40 μW/cmK2, of the π-type device containing Bi2Te3 used therein, which currently is used practically, when the angle 9 was 20° to 40°. It was confirmed that the thermoelectric device 100 had a higher performance when Ag or Cu was used as the metals 16, as compared to the cases where the other metals were used. Furthermore, in the thermoelectric device 100, even when Al was used as the metals 16, a performance was obtained that was equal to or higher than that of the π-type device containing Bi2Te3 used therein if the angle θ was 10° to 50°. [0127] In the thermoelectric device 100 produced in the same manner as in Example 13, the performance thereof was determined, with the thickness of the metals 16 being varied. Sio.8Geo.2 was used for the thermoelectric material layer 15. The angle 9 was 30° and the period x was 10 mm. Furthermore, the thickness of the thermoelectric material layer 15 was fixed at 0.2 mm, and the dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. Table 17 indicates the measurement result of the power factor of the thermoelectric device 100 in which each metal 16 was Cu and the thickness thereof was varied to 0.2 mm, 0.5 mm, 1 mm, 2 mm, 4 mm, 5 mm, 6 mm, and 10 mm. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period of grooves (the period x) and the thickness of Cu (the metals 16). It was confirmed that the best performance was obtained when the ratio was aroxmd 10-1 or 5^1. Moreover, although the measurement result is not indicated, the same tendency was obtained even when the metals 16 were Ag. [0128] [Table 17] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of metal (Cu)] Thickness of Metal (mm) 0.2 0.5 1 2 4 5 6 10 Period of Grooves' Thickness of Cu 50:1 20:1 10:1 5:1 2.5:1 2:1 1.67:1 1:1 Power Factor (μW/cmK2) 29 84 124 124 89 75 65 35 [0129] In the thermoelectric device 100 produced in the same manner as in Example 13, the performance thereof was determined, with the thickness of the thermoelectric material layer 15 being varied. The material for the thermoelectric material layer 15 was Sio.8Geo.2. The angle 0 was 30° and the period x was 10 mm. Each metal 16 was Cu and the thickness thereof was fixed at 2 mm. The dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. The thickness of the thermoelectric material layer 15 was varied to 0.02 mm, 0.04 mm, 0.1 mm, 0.2 mm, 0.4 mm, 0.8 mm, 1 mm, and 2 mm. Table 18 indicates the measurement result of the power factor of the thermoelectric device 100. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period of grooves (the period x) and the thickness of the Sio.8Geo.2 layer (the thermoelectric material layer 15). It was confirmed that the best performance was obtained when the ratio was around 50:1. Moreover, although the measurement result is not indicated, the same tendency was obtained even when the metals 16 were Ag. [0130] [Table 18] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of the thermoelectric material in the case where the metals were Cu] Thickness of Sio.8Geo.2 Layer (mm) 0.02 0.04 0.1 0.2 0.4 0.8 1 2 Period of Grooves- Thickness of Sio.8Geo.2 Layer 500:i 250:i 100:1 501 25:1 12.5:1 10:1 5:1 Power Factor (μW/cmK2) 32 69 119 124 96 58 47 22 [0131] The thermoelectric device 200 shown in FIG. 8 was produced and the performance thereof was determined. The thermoelectric device 200 shown in FIG. 8 is configured with four laminates 20, but the thermoelectric device 200 of Example 4 is configured with 15 laminates 20 connected electrically to one another in series. Since the remaining configuration is the same as in FIG. 8, the following descriptions are made with reference to FIG. 8. [0132] In the thermoelectric device 200 of Example 16, In was used for the interconnecting electrodes 81 and the extracting electrodes 82. In each laminate 20, the metals 16 were Cu, and the material for the thermoelectric material layer 15 was Sio.8Geo.2. Each laminate 20 was produced by the same production method as in Example 13. Cu plates with a size of 200 mm x 5 mm x 2 mm were bonded to both surfaces of a plate material composed of Sio.8Geo.2 with a size of 200 mm x 5 mm X 0.2 mm by thermocompression bonding and thus a layered structure 20a was obtained (see FIG. 7B). [0133] Next, machining to form grooves, each of which had a width of 0.5 mm, a depth of 2.2 mm, and an inclination angle of 30° with respect to the long side of the layered structure 20a, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end mill (see FIG. 7C). Accordingly, the angle 9 shown in FIG. 2 is 30o. Furthermore, the groove portions 17a were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 10 mm. Therefore, the period x is 10 mm. Moreover, the groove portions 17a formed in the two metal plates 16a were disposed to be offset from each other by half the period. [0134] A total of 15 laminates 20 were produced by the above-mentioned process. The 15 laminates 20 thus produced were disposed on the same plane in parallel to one another at intervals of 1 mm. Thereafter, 50-pm thick In foils were heated and compressed to form the interconnecting electrodes 81 and the extracting electrodes 82, and the laminates 20 were connected electrically to one another. The 15 laminates 20 were connected to one another in series, with the directions of the electromotive forces thereof being aligned along the line of the laminate 20. The gaps between adjacent laminates 20 and the groove portions (the insulators 17) of the laminates 20 were filled with a resin and thereby a plate-shaped thermoelectric device 200 with a size of approximately 200 mm x 80 mm x 5 mm was produced. The resistance between the extracting electrodes 82 of the thermoelectric device 200 was measured and was 24 mΩ. [0135] The power generation properties of the thermoelectric device 200 of Example 16 were evaluated. First, one surface with a size of 200 mm x 80 mm of the thermoelectric device 200 was water-cooled through an alumina plate to serve as a low-temperature body. A ceramic heater to serve as a high-temperature body was brought into close contact with the other surface of the thermoelectric device 200. With such a configuration, the low-temperature body and the high-temperature body were maintained at 25°C and 40°C. As a result, the open circuit electromotive force was 0. 39 V, and the power factor obtained by estimation was a high value, specifically, 112 μW/cmK2. A maximum power of 1.6 W was extracted from the thermoelectric device 200. [0136] In Example 17, using CoSi as the material for the thermoelectric material layer 15 and Au, Ag, Cu, or Al as the metals 16, the thermoelectric device 100 shown in FIG. 1 was produced. Au was used for the first electrode 11 and the second electrode 12. Metal plates with a size of 200 mm x 5 mm x 2 mm were bonded to both surfaces of a plate material composed of a thermoelectric material with a size of 200 mm x 5 mm x 0.4 mm by thermocompression bonding and thus a layered structure 20a including the thermoelectric material layer 15 and two metal plates 16a was obtained (see FIG. 7B). [0137] Next, machining to form grooves, each of which had a width of 0.5 mm, a depth of 2.4 mm, and an inclination angle of 30° with respect to the long side of the layered structure 20a, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end mill (see FIG. 7C). Accordingly, the angle 0 shown in FIG. 2 is 30°. Furthermore, the groove portions 17a were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 10 mm. Therefore, the period x is 10 mm. The groove portions 17a formed in the two metal plates 16a were disposed to be offset from each other by half the period. Thereafter, electrodes composed of Au were formed at both ends of the long side of the layered structure 20a by the sputtering method. Thus, the thermoelectric device 100 was produced (see FIG. 7E). [0138] With respect to the sample (the thermoelectric device) thus produced, the power generation performance thereof was evaluated. As shown in FIG. 6, one of the surfaces perpendicular to the direction Y of the thermoelectric device 100 was heated to 40°C with a ceramic heater (a high-temperature body 62), and the other was cooled to 30°C with a water-cooling apparatus (a low-temperature body 63). Then the electromotive force and the electrical resistance between both the electrodes were measured. The thermoelectric device 100 in which copper was used as the metals 16 had an electromotive force of 8.6 mV and a resistance of 0.49 mΩ. Based on this result, the power factor was estimated to be 87 μW/cmK2. Similarly, the performance of the thermoelectric device 100 was determined, with the metals 16 and the angle 6 being varied, and the result indicated in Table 19 was obtained. [0139] [Table 19] [Variations in power factor (μW/cmK2) of the device according to the inclination ang e θ(o)] Angle θ (°) 0 10 20 30 40 50 60 70 80 90 0 Au 0 20 53 69 66 52 33 16 4 Ag 0 33 80 98 90 69 43 21 5 0 Cu 0 27 69 87 82 63 40 19 5 0 Al 0 12 40 45 44 35 22 11 2 0 [0140] From the above result, it was found that if the metals 16 were other than A1 the thermoelectric device 100 exhibited excellent thermoelectric device properties of about twice or more of the power factor, about 40 μW/cmK2, of the n-type device containing Bi2Te3 used therein, which currently is used practically, when the angle θ was 20° to 50°. It was confirmed that the thermoelectric device 100 had a higher performance when Ag or Cu was used as the metals 16, as compared to the cases where the other metals were used. Furthermore, in the thermoelectric device 100, even when Al was used as the metals 16, a performance was obtained that was equal to or higher than that of the μ-type device containing Bi2Te3 used therein if the angle 8 was 20° to 40°. [0141] In the thermoelectric device 100 produced in the same manner as in Example 17, the performance thereof was determined, with the thickness of the metals 16 being varied. CoSi was used for the thermoelectric material layer 15. The angle 9 was 30° and the period x was 10 mm. Furthermore, the thickness of the thermoelectric material layer 15 was fixed at 0.4 mm, and the dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. Table 2C indicates the measurement result of the power factor of the thermoelectric device 100 in which each metal 16 was Cu and the thickness thereof was varied to 0.2 mm 0.5 mm, 1 mm, 2 mm, 4 mm, 5 mm, 8 mm, and 10mm. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period of grooves (the period x) and the thickness of Cu (the metals 16). It was confirmed that the best performance was obtained when the ratio was around 5-1. Moreover, although the measurement result is not indicated, the same tendency was obtained even when the metals 16 were Ag. [0142] [Table 20] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of metal (Cu)] Thickness of Metal (mm) 0.2 0.5 1 2 4 5 8 10 Period of Grooves: Thickness of Cu 50:1 20:1 10:1 5:1 2.5:1 2:1 1.25:1 1:1 Power Factor (pW/cmK2) 9 41 70 87 73 64 45 35 [0143] In the thermoelectric device 100 produced in the same manner as in Example 17, the performance thereof was determined, with the thickness of the thermoelectric material layer 15 being varied. The material for the thermoelectric material layer 15 was CoSi. The angle 0 was 30° and the period x was 10 mm. Each metal 16 was Cu and the thickness thereof was fixed at 2 mm. The dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. The thickness of the thermoelectric material layer 15 was varied to 0.04 mm, 0.1 mm, 0.2 mm, 0.4 mm, 0.8 mm, 1.2 mm, 1.6 mm, and 2 mm. Table 21 indicates the measurement result of the power factor of the thermoelectric device 100. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period of grooves (the period x) and the thickness of the CoSi layer (the thermoelectric material layer 15). It was confirmed that the best performance was obtained when the ratio was around 25^1. Moreover, although the measurement result is not indicated, the same tendency was obtained even when the metals 16 were Ag. [0144] [Table 21] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of the thermoelectric material in the case where the metals were Cu] Thickness of CoSi Layer (mm) 0.04 0.1 0.2 0.4 0.8 1.2 1.6 2 Period of Grooves: Thickness of CoSi Layer 250:l 100:i 50:i 25:1 12.5:1 8.33:1 6.25:1 5:1 Power Factor (μW/cmK2) 14 42 71 87 74 58 46 37 [0145] The thermoelectric device 200 shown in FIG. 8 was produced and the performance thereof was determined. The thermoelectric device 200 shown in FIG. 8 is configured with four laminates 20, but the thermoelectric device 200 of Example 4 is configured with 15 laminates 20 connected electrically to one another in series. Since the remaining configuration is the same as in FIG. 8, the following descriptions are made with reference to FIG. 8. [0146] In the thermoelectric device 200 of Example 20, In was used for the interconnecting electrodes 81 and the extracting electrodes 82. In each laminate 20, the metals 16 were Cu, and the material for the thermoelectric material layer 15 was CoSi. Each laminate 20 was produced by the same production method as in Example 20. Cu plates with a size of 200 mm x 5 mm x 2 mm were bonded to both surfaces of a plate material composed of CoSi with a size of 200 mm x 5 mm x 0.4 mm by thermocompression bonding and thus a layered structure 20a was obtained (see FIG. 7B). [0147] Next, machining to form grooves, each of which had a width of 0.5 mm, a depth of 2.4 mm, and an inchnation angle of 30° with respect to the long side of the laminate, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end mill (see FIG. 7C). Accordingly, the angle 9 is 30o. Furthermore, the groove portions 17a were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 10 mm. Therefore, the period x is 10 mm. Moreover, the groove portions 17a formed in the two metal plates 16a were disposed to be offset fi'om each other by half the period. [0148] A total of 15 laminates 20 were produced by the above-mentioned process. The 15 laminates 20 thus produced were disposed on the same plane in parallel to one another at intervals of 1 mm. Thereafter, 50"nm thick In foils were heated and pressurized to form the interconnecting electrodes 81 and the extracting electrodes 82, and the laminates 20 were connected electrically to one another. The 15 laminates 20 were connected to one another in series, with the directions of the electromotive forces thereof being aligned along the hne of the laminate 20. The gaps between adjacent laminates 20 and the groove portions (the insulators 17) of the laminates 20 were filled with a resin and thereby a plate-shaped thermoelectric device 200 with a size of approximately 200 mm x 80 mm x 5 mm was produced. The resistance between the extracting electrodes 82 of the thermoelectric device 200 was measured and was 7.3 mΩ. [0149] The power generation properties of the thermoelectric device 200 of Example 20 were evaluated. First, one surface with a size of 200 mm x 80 mm of the thermoelectric device 200 was water-cooled through an gdumina plate to serve as a low-temperature body. A ceramic heater to serve as a high-temperature body was brought into close contact with the other surface of the thermoelectric device 200. With such a configuration, the low-temperature body and the high-temperature body were maintained at 25°C and 40°C. As a result, the open circuit electromotive force was 0. 20 V, and the power factor obtained by estimation was a high value, specifically, 87 iiW/cmK2. A maximum power of 1.4 W was extracted fi'om the thermoelectric device 200. [0150] In Example 21, using SrTiO3 as the material for the thermoelectric material layer 15 and Au, Ag, Cu, or Al as the metals 16, the thermoelectric device 100 shown in FIG. 1 was produced. Au was used for the first electrode 11 and the second electrode 12. Metal plates with a size of 200 mm x 5 mm x 2 mm were bonded to both surfaces of a plate material composed of a thermoelectric material with a size of 200 mm x 5 mm x 0.2 mm by thermocompression bonding and thus a layered structure 20a including the thermoelectric material layer 15 and two metal plates 16a was obtained (see FIG. 7B). [0151] Next, machining to form grooves, each of which had a width of 0.5 mm, a depth of 2.2 mm, and an inchnation angle of 30o with respect to the long side of the layered structure 20a, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end mill (see FIG. 7C). Accordingly, the angle 9 shown in FIG. 2 is 30°. Furthermore, the groove portions 17a were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 10 mm. Therefore, the period x is 10 mm. The groove portions 17a formed in the two metal plates 16a were disposed to be offset from each other by half the period. Thereafter, electrodes composed of Au were formed at both ends of the long side of the layered structure 20a by the sputtering method. Thus, the thermoelectric device 100 was produced (see FIG. 7E). [0152] With respect to the sample (the thermoelectric device) thus produced, the power generation performance thereof was evaluated. As shown in FIG. 6, one of the surfaces perpendicular to the direction Y of the thermoelectric device 100 was heated to 40o'C with a ceramic heater (a high-temperatiu-e body 62), and the other was cooled to 30oC with a water-cooling apparatus (a low-temperature body 63). Then the electromotive force and the electrical resistance between both the electrodes were measured. The thermoelectric device 100 in which copper was used as the metals 16 had an electromotive force of 20.0 mV and a resistance of 1.8 Preliminary Amendment mΩ. Based on this result, the power factor was estimated to be 104 μW/cmK2. Similarly, the performance of the thermoelectric device 100 was determined, with the metals 16 and the angle 0 being varied, and the resvilt indicated in Table 22 was obtained. [0153] [Table 22] [Variations in power factor (pW/cmK^) of the device according to the angle 6(°)] Angle 0(°) 0 10 20 30 40 50 60 70 80 90 Au 0 52 80 78 64 46 28 13 3 0 Ag 0 86 120 112 91 65 40 18 4 0 Cu 0 73 109 104 85 61 37 17 4 0 Al 0 31 51 51 42 30 18 9 2 0 [0154] From the above result, it was found that if the metals 16 were other than Al, the thermoelectric device 100 exhibited excellent thermoelectric device properties equal to or higher than the power factor, about 40 μW/cmK2, of the π-type device containing Bi2Te3 used therein, which currently is used practically, when the angle 9 was 10o to 50o. It was confirmed that the thermoelectric device 100 had a higher performance when Ag or Cu was used as the metals 16, as compared to the cases where the other metals were used. Furthermore, in the thermoelectric device 100, even when Al was used as the metals 16, a performance was obtained that was approximately equal to or higher than that of the Tu-type device containing Bi2TB3 used therein if the angle 0 was 20® to 40®. [0155] In the thermoelectric device 100 produced in the same manner as in Example 21, the performance thereof was determined, with the thickness of the metals 16 being varied. SrTiO3 was used for the thermoelectric material layer 15. The angle 0 was 30° and the period x was 10 mm. Furthermore, the thickness of the thermoelectric material layer 15 was fixed at 0.2 mm, and the dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. Table 23 indicates the measurement result of the power factor of the thermoelectric device 100 in which each metal 16 was Cu and the thickness thereof was varied to 0.2 mm, 0.5 mm, 1 mm, 2 mm, 4 mm, 6 mm, 8 mm, and 10 mm. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period ^« of grooves (the period x) and the thickness of Cu (the metals 16). It was confirmed that the best performance was obtained when the ratio was around 5:1. Moreover, although the measurement result is not indicated, the same tendency was obtained even when the metals 16 were Ag. [0156] [Table 23] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of metal (Cu)] Thickness of Metal (mm) 0.2 0.5 1 2 4 6 8 10 Period of Grooves' 50:1 20:1 10:1 5:1 2.5:1 1.67:1 1.25:1 i:i Thickness of Cu Power Factor (μW/cmK2) 15 49 85 105 86 65 51 34 [0157] In the thermoelectric device 100 produced in the same manner as in Example 21, the performance thereof was determined, with the thickness of the thermoelectric material layer 15 being varied. The material for the thermoelectric material layer 15 was SrTiOs. The angle 9 was 30° and the period x was 10 mm. Each metal 16 was Cu and the thickness thereof was fixed at 2 mm. The dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. The thickness of the thermoelectric material layer 15 was varied to 0.02 mm, 0.04 mm, 0.1 mm, 0.2 mm, 0.8 mm, 1.2 mm, 1.6 mm, and 2 mm. Table 24 indicates the measurement result of the power factor of the thermoelectric device 100. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period of grooves (the period x) and the thickness of the SrTiOa layer (the thermoelectric material layer 15). It was confirmed that the best performance was obtained when the ratio was around 50:1. Moreover, although the measurement result is not indicated, the same tendency was obtained even when the metals 16 were Ag. [0158] [Table 24] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of the thermoelectric material in the case where the metals were Cu] Thickness of SrTiOs (mm) 0.02 0.04 0.1 02 08 1.2 L6 2 Period of Grooves: Thickness of SrTiOa 500:1 250:1 100:1 50:1 12.5:1 8.33:1 6.25:1 5:1 Power Factor (μW/cmK2) 15 42 79 105 75 56 43 31 [0159] The thermoelectric device 200 shown in FIG. 8 was produced and the performance thereof was determined. The thermoelectric device 200 shown in FIG. 8 is configured with four laminates 20, but the thermoelectric device 200 of Example 4 is configured with 15 laminates 20 connected electrically to one another in series. Since the remaining configuration is the same as in FIG. 8, the following descriptions are made with reference to FIG. 8. [0160] In the thermoelectric device 200 of Example 24, In was used for the interconnecting electrodes 81 and the extracting electrodes 82. In each laminate 20, the metals 16 were Cu, and the material for the thermoelectric material layer 15 was SrTiOa. Each laminate 20 was produced by the same production method as in Example 21. Cu plates with a size of 200 mm x 5 mm x 2 mm were bonded to both sxu-faces of a plate material composed of SrTiOa with a size of 200 mm x 5 mm x 0.2 mm by thermocompression bonding and thus a layered structure 20a was obtained (see FIG. 7B). [0161] Next, machining to form grooves, each of which had a width of 0.5 mm, a depth of 2.2 mm, and an inclination angle of 30° with respect to the long side of the laminate, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end mill (see FIG. 7C). Accordingly, the angle 9 shown in FIG. 2 is 30o. Furthermore, the groove portions 17a were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 10 mm. Therefore, the period x is 10 mm. Moreover, the groove portions 17a formed in the two metal plates 16a were disposed to be offset from each other by half the period. [0162] A total of 15 laminates 20 were produced by the above-mentioned process. The 15 laminates 20 thus produced were disposed on the same plane in parallel to one another at intervals of 1 mm. Thereafter, 50-μm thick In foils were heated and pressurized to form the interconnecting electrodes 81 and the extracting electrodes 82, and the laminates 20 were connected electrically to one another. The 15 laminates 20 were connected to one another in series, with the directions of the electromotive forces thereof being aligned along the line of the laminate 20. The gaps between adjacent laminates 20 and the groove portions (the insulators 17) of the laminates 20 were filled with a resin and thereby a plate-shaped thermoelectric device 200 with a size of approximately 200 mm x 80 mm x 5 mm was produced. The resistance between the extracting electrodes 82 of the thermoelectric device 200 was measured and was 27.5 mΩ. [0163] The power generation properties of the thermoelectric device 200 of Example 24 were evaluated. First, one surface with a size of 200 mm x 80 mm of the thermoelectric device 200 was water-cooled through an alumina plate to serve as a low-temperature body. A ceramic heater to serve as a high-temperature body was brought into close contact with the other surface of the thermoelectric device 200. With such a configuration, the low-temperature body and the high-temperature body were maintained at 25°C and 40°C. As a result, the open circuit electromotive force was 0. 40 V, and the power factor obtained by estimation was a high value, specifically, 105 μW/cmK2. A maximum power of 1.5 W was extracted from the thermoelectric device 200. [0164] In Example 25, using Nao.5CoO2 as the material for the thermoelectric material layer 15 and Au, Ag, Cu, or Al as the metals 16, the thermoelectric device 100 shown in FIG. 1 was produced. Au was used for the first electrode 11 and the second electrode 12. Metal plates with a size of 200 mm x 5 mm x 1 mm were bonded to both surfaces of a plate material composed of a thermoelectric material with a size of 200 mm x 5 mm x 0.2 mm by thermocompression bonding and thus a layered structure 20a including the thermoelectric material layer 15 and two metal plates 16a was obtained (see FIG. 7B). [0165] Next, machining to form grooves, each of which had a width of 0.5 mm, a depth of 1.2 mm, and an inclination angle of 30° with respect to the long side of the layered structure 20a, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end mill (see FIG. 7C). Accordingly, the angle 0 shown in FIG. 2 is 30o. Furthermore, the groove portions 17a were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 10 mm. Therefore, the period x is 10 mm. The groove portions 17a formed in the two metal plates 16a were disposed to be offset fi'om each other by half the period. Thereafter, electrodes composed of Au were formed at both ends of the long side of the layered structure 20a by the sputtering method. Thus, the thermoelectric device 100 was produced (see FIG. 7E). [0166] With respect to the sample (the thermoelectric device) thus produced, the power generation performance thereof was evaluated. As shown in FIG. 6, one of the surfaces perpendicular to the direction Y of the thermoelectric device 100 was heated to 40°C with a ceramic heater (a high-temperature body 62), and the other was cooled to 30°C with a water-cooling apparatus (a low-temperature body 63). Then the electromotive force and the electrical resistance between both the electrodes were measured. The thermoelectric device 100 in which copper was used as the metals 16 had an electromotive force of 10.7 mV and a resistance of 1.3 mΩ. Based on this result, the power factor was estimated to be 99 μW/cmK2. Similarly, the performance of the thermoelectric device 100 was determined, with the metals 16 and the angle 6 being varied, and the result indicated in Table 25 was obtained. [0167] [Table 25] [Variations in power factor (pW/cmK2) of the device according to the angle θ(o)] Angle θ (o) 0 10 20 30 40 50 60 70 80 90 ~ Au 0 29 68 81 74 56 35 17 5 _0 Ag 0 47 99 111 98 73 45 21 6 0 Cu 0 38 86 99 89 67 42 20 5 0 Al 0 22 53 65 60 46 29 14 3 10 [0168] From the above result, it was found that if the metals 16 were other than Al, the thermoelectric device 100 exhibited excellent thermoelectric device properties of about twice or more of the power factor, about 40 μW/cmK2, of the π-type device containing Bi2Te3 used therein, which currently is used practically, when the angle 9 was 20o to 40o. It was confirmed that the thermoelectric device 100 had a higher performance when Ag or Cu was used as the metals 16, as compared to the cases where the other metals were used. Furthermore, in the thermoelectric device 100, even when Al was used as the metals 16, a performance was obtained that was equal to or higher than that of the π-type device containing Bi2Te3 used therein if the angle 0 was 20° to 50°. [0169] In the thermoelectric device 100 produced in the same manner as in Example 25, the performance thereof was determined, with the thickness of the metals 16 being varied. Nao.8CoO2 was used for the thermoelectric material layer 15. The angle 9 was 30° and the period x was 10 mm. Furthermore, the thickness of the thermoelectric material layer 15 was fixed at 0.2 mm, and the dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. Table 26 indicates the measurement result of the power factor of the thermoelectric device 100 in which each metal 16 was Cu and the thickness thereof was varied to 0.1 mm, 0.2 mm, 0.5 mm, 1 mm, 2 mm, 5 mm, 8 mm, and 10 mm. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period of grooves (the period x) and the thickness of Cu (the metals 16). It was confirmed that the best performance was obtained when the ratio was around 10:1. Moreover, although the measurement result is not indicated, the same tendency was obtained even when the metals 16 were Ag. [0170] [Table 26] [Variations in power factor (μW/cmK2) of the device according to the ratio of the period x of grooves and the thickness of metal (Cu)] Thickness of Metal (mm) 0.1 0.2 0.5 1 2 5 8 10 Period of Grooves: Thickness of Cu 100:1 50:1 20:l 10:l 5:1 2:1 1,25:1 1:1 Power Factor (μW/cmK2) 12 35 83 102 84 54 30 24 [0171] In the thermoelectric device 100 produced in the same manner as in Example 25, the performance thereof was determined, with the thickness of the thermoelectric material layer 15 being varied. The material for the thermoelectric material layer 15 was Nao.3CoO2. The angle 9 was 30° and the period x was 10 mm. Each metal 16 was Cu and the thickness thereof was fixed at 1 mm. The dimensions of the thermoelectric device 100 were a length of 200 mm and a height of 5 mm. The thickness of the thermoelectric material layer 15 was varied to 0.02 mm, 0.04 mm, 0.1 mm, 0.2 mm, 0.4 mm, 0.8 mm, 1 mm, and 1.6 mm. Table 27 indicates the measurement result of the power factor of the thermoelectric device 100. It can be understood that the performance of the thermoelectric device 100 depends on the ratio of the period of grooves (the period x) and the thickness of the Nao.3CoO2 layer (the thermoelectric material layer 15). It was confirmed that the best performance was obtained when the ratio was around 50:1. Moreover, although the measurement result is not indicated, the same tendency was obtained even when the metals 16 were Ag. [0172] [Table 27] [Variations in power factor (μ W/cmK2) of the device according to the ratio of the period x of grooves and the thickness of the thermoelectric material in the case where the metals were C u] Thickness of 0.02 0.04 0.1 0.2 0.4 0.8 1 1.6 Nao.3CoO2 Layer (mm) Period of Grooves: Thickness of 500:1 250:1 100:1 50:1 25:1 12.5:1 10:1 6.25:1 Nao.3Co02 Layer Power Factor ( μW/cmK2) 22 48 92 95 76 44 35 20 [0173] The thermoelectric device 200 shown in FIG. 8 was produced and the performance thereof was determined. The thermoelectric device 200 shown in FIG. 8 is configured with four laminates 20, but the thermoelectric device 200 of Example 9S is configured with 15 laminates 20 connected electrically to one another in series. Since the remaining configuration is the same as in FIG. 8, the following descriptions are made with reference to FIG. 8. [0174] In the thermoelectric device 200 of Example 28, In was used for the interconnecting electrodes 81 and the extracting electrodes 82. In each laminate 20, the metals 16 were Cu, and the material for the thermoelectric material layer 15 was Nao.4Co02. Each laminate 20 was produced by the same production method as in Example 25. Cu plates with a size of 200 mm x 5 mm x 2 mm were bonded to both surfaces of a plate material composed of Nao.4Co02 with a size of 200 mm x 5 mm X 0.2 mm by thermo compression bonding and thus a layered structure 20a was obtained (see FIG. 7B). [0175] Next, machining to form grooves, each of which had a width of 0.5 mm, a depth of 2.2 mm, and an inclination angle of 30° with respect to the long side of the laminate, was carried out with respect to portions of the metal plates 16a of the layered structure 20a from both sides with an end mill (see FIG. 7C). Accordingly, the angle 9 shown in FIG, 2 is 30°. Furthermore, the groove portions 17a were disposed periodically and the interval between adjacent groove portions 17a corresponding to the period x shown in FIG. 2 was 10 mm. Therefore, the period x is 10 mm. Moreover, the groove portions 17a formed in the two metal plates 16a were disposed to be offset from each other by half the period. [0176] A total of 15 laminates 20 were produced by the above-mentioned process. The 15 laminates 20 thus produced were disposed on the same plane in parallel to one another at intervals of 1 mm. Thereafter, 50-μm thick In foils were heated and pressurized to form the interconnecting electrodes 81 and the extracting electrodes 82, and the laminates 20 were connected electrically to one another. The 15 laminates 20 were connected to one another in series, with the directions of the electromotive forces thereof being aligned along the line of the laminate 20. The gaps between adjacent laminates 20 and the groove portions (the insulators 17) of the laminates 20 were filled with a resin and thereby a plate-shaped thermoelectric device 200 with a size of approximately 200 mm x 80 mm x 5 mm was produced. The resistance between the extracting electrodes 82 of the thermoelectric device 200 was measured and was 16 mΩ. [0177] The power generation properties of the thermoelectric device 200 of Example 28 were evaluated. First, one surface with a size of 200 mm x 80 mm of the thermoelectric device 200 was water-cooled through an alumina plate to serve as a lowtemperature body. A ceramic heater to serve as a high-temperature body was brought into close contact with the other surface of the thermoelectric device 200. With such a configuration, the lowtemperature body and the high"temperature body were maintained at 25°C and 40°C. As a restdt, the open circuit electromotive force was 0. 28 V, and the power factor obtained by estimation was a high value, specifically, 84 μW/cmK2. A maximum power of 1.2 W was extracted from the thermoelectric device 200. Industrial Applicability [0178] The present invention can be used for thermoelectric devices that convert thermal energy to electrical energy. CLAIMS 1. A thermoelectric device, comprising: a first electrode and a second electrode that are disposed to be opposed to each other, and a laminate that is interposed between the first electrode and the second electrode, is connected electrically to both the first electrode and the second electrode, and is layered in a direction orthogonal to an electromotive-force extracting direction, which is the direction in which the first electrode and the second electrode are opposed to each other, wherein the laminate comprises a thermoelectric material layer as well as a first holding layer and a second holding layer that are disposed so as to interpose the thermoelectric material layer therebetween, the first holding layer and the second holding layer have layered structures with metals and insulators that are layered alternately, respectively, and a layered direction of the layered structures is parallel with a layer surface of the laminate and is inclined with respect to the electromotive-force extracting direction, the insulators of the first holding layer and the insulators of the second holding layer are disposed so as to appear alternately in the layered direction of the layered structures, and a temperature difference is generated in the direction orthogonal to the layered direction of the laminate and orthogonal to the electromotive-force extracting direction, so that electrical power is output through the first electrode and the second electrode. 2. The thermoelectric device according to claim 1, wherein the layered structures of the first holding layer and the second holding layer are both periodic layered structures, a period at which the insulators are layered in the first holding layer is the same as that at which the insulators are layered in the second holding layer, and the insulators of the first holding layer and the insulators of the second holding layer are disposed to be offset from each other by substantially half the period in the direction in which they are layered. 3. The thermoelectric device according to claim 1, wherein the thermoelectric material layer is a Sio.8Geo.2 layer. 4. The thermoelectric device according to claim 3, wherein the direction of the line formed at an intersection of a layer surface of the laminate and that of the layered structures and the electromotive-force extracting direction form an angle of 10° to 50°. 5. The thermoelectric device according to claim 4, wherein the direction of the line formed at an intersection of the layer surface of the laminate and that of the layered structures and the electromotive-force extracting direction form an angle of 20° to 40°. 6. The thermoelectric device according to claim 3, wherein the layered structures of the first holding layer and the second holding layer are both periodic layered structures, a period at which the insulators are layered in the first holding layer is the same as that at which the insulators are layered in the second holding layer, the insulators of the first holding layer and the insulators of the second holding layer are disposed to be offset from each other by substantially half the period in the direction in which they are layered, and the ratio of the period at which the insulators are layered and the thickness of the metals in the layered direction of the laminate is in a range of 20:1 to 1.67:1. 7. The thermoelectric device according to claim 6, wherein the ratio of the period at which the insulators are layered and the thickness of the metals in the layered direction of the laminate is in a range of 10:1 to 2:1. 8. The thermoelectric device according to claim 3, wherein the layered structures of the first holding layer and the second holding layer are both periodic layered structures, a period at which the insulators are layered in the first holding layer is the same as that at which the insulators are layered in the second holding layer, the insulators of the first holding layer and the insulators of the second holding layer are disposed to be offset from each other by substantiadly half the period in the direction in which they are layered, and the ratio of the period at which the insulators are layered and the thickness of the thermoelectric material layer in the layered direction of the laminate is in a range of 250:l to l0:l. 9. The thermoelectric device according to claim 8, wherein the ratio of the period at which the insulators are layered and the thickness of the thermoelectric material layer in the layered direction of the laminate is in a range of 100:1 to 25:1. 10. The thermoelectric device according to claim 1, wherein the thermoelectric material layer is a Bi2-aSbTe3 layer (0