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Thin Film Electronics On Isomalt

Abstract: The present disclosure relates to the field of dissolvable electronics. More particularly, the present disclosure relates to forming thin film electronic components on isomalt substrate. The disclosure elaborates upon fabrication of 2D degradable inductor and capacitor on isomalt substrate using process of thermal vapor deposition / physical vapor deposition (PVD) with the help of shadow mask and fabrication of interconnects on isomalt substrate. Isomalt may also be molded in such a way so as to form a 3D coil and coating of Ag (silver) done using DC magnetron sputtering to fabricate a 3D degradable inductor.

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Notices, Deadlines & Correspondence

Patent Information

Application #
Filing Date
11 May 2019
Publication Number
46/2020
Publication Type
INA
Invention Field
CHEMICAL
Status
Email
info@khuranaandkhurana.com
Parent Application
Patent Number
Legal Status
Grant Date
2023-08-18
Renewal Date

Applicants

Indian Institute of Science
C V Raman Road, Bangalore

Inventors

1. SAMBANDAN, Sanjiv
Associate Professor, Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore – 560061
2. GUNASEKAR, K.R.
Principal Research Scientist, Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore – 560061
3. SARAVANAVEL, Ganapathy
Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore – 560061

Specification

DESC:TECHNICAL FIELD
[0001] The present disclosure relates to the field of dissolvable electronics. More particularly, the present disclosure relates to forming thin film electronic components using a degradable and non-toxic substrate.

BACKGROUND
[0002] Background description includes information that may be useful in understanding the present invention. It is not an admission that any of the information provided herein is prior art or relevant to the presently claimed invention, or that any publication specifically or implicitly referenced is prior art.
[0003] Dissolvable electronics is an upcoming field pertaining to manufacture and use of electronic components that dissolve under different circumstances such as exposure to different chemicals, including water.
[0004] Present such components have limitations. Non-degradable and toxic materials are used in their fabrication and so their usage in medical devices is severely limited Not many passive components can be presently made using dissolvable electronics. Present such components (and devices made therefrom) can carry only a limited power and are not transferable.
[0005] Hence there is a need in the art for a method of manufacturing dissolvable electronic components that produces dissolvable electronic components that are non-toxic and bio-compatible so as to be readily usable in medical devices. The components should be easily manufacturable.
[0006] In some embodiments, the numerical parameters set forth in the written description and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by a particular embodiment. In some embodiments, the numerical parameters should be construed in light of the number of reported significant digits and by applying ordinary rounding techniques. Notwithstanding that the numerical ranges and parameters setting forth the broad scope of some embodiments of the invention are approximations, the numerical values set forth in the specific examples are reported as precisely as practicable. The numerical values presented in some embodiments of the invention may contain certain errors necessarily resulting from the standard deviation found in their respective testing measurements.
[0007] As used in the description herein and throughout the claims that follow, the meaning of “a,” “an,” and “the” includes plural reference unless the context clearly dictates otherwise. Also, as used in the description herein, the meaning of “in” includes “in” and “on” unless the context clearly dictates otherwise.
[0008] The recitation of ranges of values herein is merely intended to serve as a shorthand method of referring individually to each separate value falling within the range. Unless otherwise indicated herein, each individual value is incorporated into the specification as if it were individually recited herein. All methods described herein can be performed in any suitable order unless otherwise indicated herein or otherwise clearly contradicted by context. The use of any and all examples, or exemplary language (e.g. “such as”) provided with respect to certain embodiments herein is intended merely to better illuminate the invention and does not pose a limitation on the scope of the invention otherwise claimed. No language in the specification should be construed as indicating any non-claimed element essential to the practice of the invention.
[0009] Groupings of alternative elements or embodiments of the invention disclosed herein are not to be construed as limitations. Each group member can be referred to and claimed individually or in any combination with other members of the group or other elements found herein. One or more members of a group can be included in, or deleted from, a group for reasons of convenience and/or patentability. When any such inclusion or deletion occurs, the specification is herein deemed to contain the group as modified thus fulfilling the written description of all groups used in the appended claims.

OBJECTS OF THE PRESENT DISCLOSURE
[0010] Some of the objects of the present disclosure, which at least one embodiment herein satisfies are as listed herein below.
[0011] It is an object of the present disclosure to provide a process for forming thin film electronic components using a degradable and non-toxic substrate.
[0012] It is another object of the present disclosure to provide a simple and effective process for forming thin film electronic components using a degradable and non-toxic substrate.
[0013] It is another object of the present disclosure to provide a reliable and efficient process for forming thin film electronic components using a degradable and non-toxic substrate.
[0014] It is another object of the present disclosure to provide a robust process for forming thin film electronic components using a degradable and non-toxic substrate.

SUMMARY
[0015] The present disclosure relates to the field of dissolvable electronics. More particularly, the present disclosure relates to forming thin film electronic components using a degradable and non-toxic substrate.
[0016] This summary is provided to introduce simplified concepts of a system for time bound availability check of an entity, which are further described below in the detailed description. This summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended for use in determining/limiting the scope of the claimed subject matter.
[0017] An aspect of the present disclosure pertains to a process for fabrication of thin-film electronic components on isomalt substrates. The process comprises: heating isomalt pellets on a heating dish to a temperature of 200ºC so as to achieve a homogeneous isomalt solution; forming an isomalt substrate by pouring the homogeneous isomalt solution on a substrate mold, with the substrate mould being based on a polydimethylsiloxane (PDMS) mould; fabricating interconnects on the formed isomalt substrate by means of an interconnect shadow mask using a thermal or sputtering process; fabricating a capacitor on the formed isomalt by means of a capacitor shadow mask using a thermal vapor deposition/physical vapor deposition process; and fabricating a inductor on the formed isomalt using a sputtering process.
[0018] In an aspect, the fabrication of the capacitor involves: depositing silver as a bottom electrode and a top electrode using a thermal vapor deposition/physical vapor deposition process through the capacitor shadow mask; and depositing a thin layer of isomalt as a dielectric layer using a thermal vapor deposition/physical vapor deposition process through the capacitor shadow mask.
[0019] In an aspect, the fabrication of the inductor involves: heating the fabricated isomalt with a temperature of 100ºC to form a semi-viscous solution of the fabricated isomalt; forming a three dimensional (3D) coil using a glass rod on the semi-viscous solution; and coating, by means of a DC magnetron sputtering process, the formed 3D coil with silver with the coating having a thickness of 100nm.
[0020] In an aspect, the substrate mould with a dimension of 25mm x 74 mm.
[0021] In an aspect, the interconnect shadow mask having width 120µm, track length 5cm, thickness 100nm.
[0022] In an application, the process is utilized in the manufacture of a 2D dissolvable RF tag, and medical applications.
[0023] In an aspect, the capacitors formed can have a value of 50 to 150pf, and the inductors can have a value of 0.5 to 5 µH.
[0024] Another aspect of the present disclosure pertains to a process for fabrication of isomalt substrates for use with thin film electronic components. The process comprises heating isomalt pellets on a heating dish to a temperature of 200ºC so as to achieve a homogeneous isomalt solution; and forming an isomalt substrate by pouring the homogeneous isomalt solution on a substrate mold, with the substrate mould being based on a polydimethylsiloxane (PDMS) mould.
[0025] In an aspect, the substrate mould has a dimension of 25mm x 74 mm.
[0026] Various objects, features, aspects and advantages of the inventive subject matter will become more apparent from the following detailed description of preferred embodiments, along with the accompanying drawing figures in which like numerals represent like components

BRIEF DESCRIPTION OF THE DRAWINGS
[0027] The accompanying drawings are included to provide a further understanding of the present disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments of the present disclosure and, together with the description, serve to explain the principles of the present disclosure.
[0028] The diagrams are for illustration only, which thus is not a limitation of the present disclosure, and wherein:
[0029] FIGs. 1A to 1E illustrate process of fabrication of isomalt substrate in accordance with an exemplary embodiment of the present disclosure.
[0030] FIG. 2 illustrates fabricated interconnects on the isomalt substrate in accordance with an exemplary embodiment of the present disclosure.
[0031] FIG. 3 illustrates 2D inductor and capacitor on isomalt substrate in accordance with an exemplary embodiment of the present disclosure.
[0032] FIG. 4 illustrates inductance and capacitance (of the inductor and capacitor as made above) measured using impedance analyzer in accordance with an exemplary embodiment of the present disclosure
[0033] FIGs. 5A and 5B illustrate process of fabrication of a 3D inductor in accordance with an exemplary embodiment of the present disclosure.
[0034] FIGs. 6A to 6D illustrate process of making a transceiver circuit in accordance with an exemplary embodiment of the present disclosure.
[0035] FIG. 7 illustrates demonstration of an RF tag in accordance with an exemplary embodiment of the present disclosure.
[0036] FIG. 8 illustrates a transferable 2D RF tag and its characteristics in accordance with an exemplary embodiment of the present disclosure.
[0037] FIGs. 9A and 9B illustrate distance vs. voltage wireless signal transfer process
[0038] FIG. 10 illustrates process flow for a 3D LC circuit in accordance with an exemplary embodiment of the present disclosure.
[0039] FIG. 11 illustrates distance vs voltage and its characteristics for 3D RF tag elaborated herein in accordance with an exemplary embodiment of the present disclosure.

DETAILED DESCRIPTION
[0040] The following is a detailed description of embodiments of the disclosure depicted in the accompanying drawings. The embodiments are in such detail as to clearly communicate the disclosure. However, the amount of detail offered is not intended to limit the anticipated variations of embodiments; on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the present disclosure as defined by the appended claims.
[0041] Various terms as used herein are shown below. To the extent a term used in a claim is not defined below, it should be given the broadest definition persons in the pertinent art have given that term as reflected in printed publications and issued patents at the time of filing.
[0042] FIGs. 1A to 1E illustrate process of fabrication of isomalt substrate in accordance with an exemplary embodiment of the present disclosure.
[0043] FIG. 1A shows isomalt pellets, FIG. 1B shows heating of the pellets to 200 degrees centigrade, FIG.1C shows molten stage of the pellets, FIG.1D molten isomalt on silicon mold and FIG.1E the prepared isomalt substrate.
[0044] In an aspect, present disclosure elaborates upon fabrication of 2D and 3D ingestible and dissolvable inductor using isomalt. The process starts with synthesis of thin films using isomalt.
[0045] In an exemplary embodiment, to prepare the isomalt substrate 20gms (grams) of isomalt pellets can be taken in a petridish. Then, the isomalt pellets can be heated using a hot plate at a temperature of 200 degrees centigrade. Continuous stirring using glass rod can be done to help dissolve all of the pellets evenly. The isomalt solution thereby became homogeneous.
[0046] The solution can be poured on a polydimethylsiloxane (PDMS) mould (25mmX74 mm size, in an exemplary embodiment) and allowed to cool for, for instance, 10 minutes. The isomalt substrate is ready and can be removed from the mold. The isomalt substrate is vacuum compatible (10-5 mbar). As can be readily understood, numbers provided herein are approximations pertaining to exemplary embodiments and can be varied as per requirement.
[0047] FIG. 2 illustrates fabricated interconnects on the isomalt substrate in accordance with an exemplary embodiment of the present disclosure.
[0048] After preparing the isomalt substrate, interconnects can be fabricated on it.
[0049] In an exemplary embodiment, fabrication of interconnects can be carried out using shadow mask of width 120µm, track length of 5cm with 100nm thickness by thermal/sputtering process.
[0050] FIG. 3 illustrates 2D inductor and capacitor on isomalt substrate in accordance with an exemplary embodiment of the present disclosure.
[0051] FIG. 4 illustrates inductance and capacitance (of the inductor and capacitor as made above) measured using impedance analyzer in accordance with an exemplary embodiment of the present disclosure.
[0052] After interconnects are made on the isomalt substrate, fabrication of 2D inductor and capacitor can be performed.
[0053] For the purpose the prepared isomalt substrate can be taken. The inductor can be fabricated with the help of a shadow mask by using process of thermal vapour deposition /physical vapor deposition (PVD) and silver metal can be coated in the process.
[0054] The fabrication of capacitor involves deposition of silver (Ag) as the bottom electrode, thin layer of isomalt as a dielectric layer and silver as the top electrode by thermal vapour deposition /PVD process through the shadow mask.
[0055] The inductance and capacitance can be measured using impedance analyzer.
[0056] FIGs.5A and 5B illustrate process of fabrication of a 3D inductor in accordance with an exemplary embodiment of the present disclosure.
[0057] A 3D inductor can be fabricated using the isomalt substrate prepared.
[0058] For the purpose, the prepared isomalt substrate can be melted at 100 degrees centigrade to make it semi-viscous. A glass rod can be slightly dipped in the semi-viscous solution and gradually lifted to form a capillary bridge and slightly rotated to form a 3D coil.
[0059] The 3D coil can then be allowed to cool down to room temperature, and the glass rod can be removed.
[0060] The 3D coil can next be coated with silver of thickness 100nm using DC magnetron sputtering.
[0061] In an aspect, process as elaborated above can be used to make a 2D dissolvable RF tag for wireless transmission of power with applications in medicinal aids. The tag can have several features such as Wireless Signal transfer, transferable to any substrate, invisible electronics, edible in nature, RF transreciever tag tracking without IC, and possible to act as both temperature sensor and RF tag.
[0062] Likewise, a 3D dissolvable tag with encapsulation may be provided. It can have medical usage
[0063] Binding of inductor and capacitor is natural due to the sticky nature of isomalt. It can have wireless signal transfer, RF tag with encapsulation can be integrated with a pulsed signal generated, for instance, using a switch along with a DC battery.
[0064] The tag may be configured for multiple purposes. For instant, it may be configured to act as a temperature sensor as well as an RF tag. It can act as a strain sensor and is biodegradeable in nature.
[0065] An experimental setup for building an LC circuit (inductor –capacitor circuit) using PCB board can be implemented as further described.
[0066] The inductor can be built on PCB board which can be connected to a capacitor of known value to form a tank circuit that can act as a transmitter and receiver.
[0067] The transmitter can be connected to a function generator in which calculated theoretical frequency is used and then the receiver can be brought near the transmitter (for instance, within 5cm range).
[0068] The RFID transmits an electromagnetic field with their reader antenna (receiver).
[0069] To detect the power range, it is checked using a digital oscilloscope.
F=1/2pvLC
[0070] FIGs. 6A to 6D illustrate process of making a transceiver circuit in accordance with an exemplary embodiment of the present disclosure.
[0071] FIG. 6A illustrates that resonance frequency matches and wireless communication happens. FIG. 6B shows a test setup. FIG. 6C illustrates design for a transceiver circuit. FIG. 6D is an image of such a circuit.
[0072] In a demonstration, a PCB built transmitter can be used to transmit the signal using function generator. For the purpose, the fabricated passive dissolvable transreceiver can be brought near the PCB built transmitter at a range of 2 to 5 cm.
[0073] One of the tank circuits can receive the signal and transmit the received signal to another tank circuit in the passive transreceiver circuit. Thereafter, the tank circuit that received the signal can act as a transmitter and transmit the received signal.
[0074] This signal can be detected by the PCB built receiver which is in turn connected to the digital oscilloscope. The strength of the received signal can be obtained from the digital oscilloscope.
[0075] Hence it can be concluded that the passive dissolvable transreceiver can be used in the form of a tablet which can be intaken ( ingested) by humans which in turn helps to detect the blockages in the digestive tract. The transceiver can be controlled externally.
[0076] FIG. 7 illustrates demonstration of an RF tag in accordance with an exemplary embodiment of the present disclosure.
[0077] FIG. 8 illustrates a transferable 2D RF tag and its characteristics in accordance with an exemplary embodiment of the present disclosure.
[0078] FIGs. 9A and 9B illustrate distance vs. voltage wireless signal transfer process for a 2D RF tag in accordance with an exemplary embodiment of the present disclosure.
[0079] FIG. 9A illustrates distance vs. voltage wireless signal transfer process before dissolving in water, while FIG. 9B illustrates distance vs. voltage wireless signal transfer process after dissolving in water
[0080] In another aspect, present disclosure elaborates upon fabrication of a passive dissolvable 3D RF tag. Fabricated 3D inductor is coated with Ag (silver) via DC magnetron sputtering technique and then it is connected with a capacitor of known value forming an LC (inductor capacitor) circuit. This circuit is then brought in range with the transmitter which is connected to a digital oscilloscope. The strength of the received signal can be obtained from the digital oscilloscope.
[0081] Hence it can be concluded that a passive dissolvable 3D inductor can be formed as above.
[0082] FIG. 10 illustrates process flow for a 3D LC circuit in accordance with an exemplary embodiment of the present disclosure.
[0083] FIG. 11 illustrates distance vs voltage and its characteristics for 3D RF tag elaborated herein in accordance with an exemplary embodiment of the present disclosure.
[0084] In exemplary embodiments and not limitations, components fabricated using processes as elaborated above can have operate in frequency range of 1 to 20 MHz, amplitude of 5 volts, and distance 2 to 5 centimeters. Capacitors formed can have a value of 50 to 150pf, and inductor can have a value of 0.5 to 5 µH.
[0085] In another aspect, thin film electronics on isomalt process described above can as well be used for making other electronic components, for instance transistors. Different sensors, for instance a temperature sensor can as well be developed on isomalt substrate.
[0086] Manufacturing process of making dissolvable electronic components using thin film electronics on isomalt as described above has several advantages. The process of manufacture elaborated is a simple, low temperature process. Isomalt substrate is readily dissolvable in water and components made using such a substrate and other suitable materials can be non-toxic as well as bio-compatible so that they may be used in medical devices.
[0087] While the foregoing describes various embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof. The scope of the invention is determined by the claims that follow. The invention is not limited to the described embodiments, versions or examples, which are included to enable a person having ordinary skill in the art to make and use the invention when combined with information and knowledge available to the person having ordinary skill in the art.

ADVANTAGES OF THE PRESENT DISCLOSURE
[0088] The present disclosure provides a process for forming thin film electronic components using a degradable and non-toxic substrate.
[0089] The present disclosure provides a simple and effective process for forming thin film electronic components using a degradable and non-toxic substrate.
[0090] The present disclosure provides a reliable and efficient process for forming thin film electronic components using a degradable and non-toxic substrate.
[0091] The present disclosure provides a robust process for forming thin film electronic components using a degradable and non-toxic substrate.
,CLAIMS:1. A process for fabrication of thin-film electronic components on isomalt substrates, the process comprising:
heating isomalt pellets on a heating dish to a temperature of 200ºC so as to achieve a homogeneous isomalt solution;
forming an isomalt substrate by pouring the homogeneous isomalt solution on a substrate mold, with the substrate mould being based on a polydimethylsiloxane (PDMS) mould;
fabricating interconnects on the formed isomalt substrate by means of an interconnect shadow mask using a thermal or sputtering process; and
fabricating a capacitor on the formed isomalt by means of a capacitor shadow mask using a thermal vapor deposition/physical vapor deposition process; and
fabricating a inductor on the formed isomalt using a sputtering process.
2. The process as claimed in claim 1, wherein the fabrication of the capacitor involves: depositing silver as a bottom electrode and a top electrode using a thermal vapor deposition/physical vapor deposition process through the capacitor shadow mask; and depositing a thin layer of isomalt as a dielectric layer using a thermal vapor deposition/physical vapor deposition process through the capacitor shadow mask.
3. The process as claimed in claim 2, wherein the fabrication of the inductor involves: heating the fabricated isomalt with a temperature of 100ºC to form a semi-viscous solution of the fabricated isomalt; forming a three dimensional (3D) coil using a glass rod on the semi-viscous solution; and coating, by means of a DC magnetron sputtering process, the formed 3D coil with silver with the coating having a thickness of 100nm.
4. The process as claimed in claim 3, wherein the substrate mould with a dimension of 25mm x 74 mm.
5. The process as claimed in claim 4, wherein the interconnect shadow mask having width 120µm, track length 5cm, thickness 100nm.
6. The process according to claim 3, wherein the process is utilized in the manufacture of a 2D dissolvable RF tag, and medical applications.
7. The process according to claim 5, wherein the capacitors formed can have a value of 50 to 150pf, and the inductors can have a value of 0.5 to 5 µH.
8. A process for fabrication of isomalt substrates for use with thin film electronic components, the process comprising:
heating isomalt pellets on a heating dish to a temperature of 200ºC so as to achieve a homogeneous isomalt solution; and
forming an isomalt substrate by pouring the homogeneous isomalt solution on a substrate mold, with the substrate mould being based on a polydimethylsiloxane (PDMS) mould; and
wherein the substrate mould has a dimension of 25mm x 74 mm.

Documents

Application Documents

# Name Date
1 201941018905-STATEMENT OF UNDERTAKING (FORM 3) [11-05-2019(online)].pdf 2019-05-11
2 201941018905-PROVISIONAL SPECIFICATION [11-05-2019(online)].pdf 2019-05-11
3 201941018905-FORM 1 [11-05-2019(online)].pdf 2019-05-11
4 201941018905-DRAWINGS [11-05-2019(online)].pdf 2019-05-11
5 201941018905-DECLARATION OF INVENTORSHIP (FORM 5) [11-05-2019(online)].pdf 2019-05-11
6 201941018905-Proof of Right (MANDATORY) [22-06-2019(online)].pdf 2019-06-22
7 201941018905-FORM-26 [22-06-2019(online)].pdf 2019-06-22
8 Correspondence by Agent_Form1,Form26_24-06-2019.pdf 2019-06-24
9 201941018905-ENDORSEMENT BY INVENTORS [11-05-2020(online)].pdf 2020-05-11
10 201941018905-DRAWING [11-05-2020(online)].pdf 2020-05-11
11 201941018905-CORRESPONDENCE-OTHERS [11-05-2020(online)].pdf 2020-05-11
12 201941018905-COMPLETE SPECIFICATION [11-05-2020(online)].pdf 2020-05-11
13 201941018905-FORM 18 [12-02-2021(online)].pdf 2021-02-12
14 201941018905-FER.pdf 2022-02-03
15 201941018905-FORM-26 [02-08-2022(online)].pdf 2022-08-02
16 201941018905-FER_SER_REPLY [02-08-2022(online)].pdf 2022-08-02
17 201941018905-CORRESPONDENCE [02-08-2022(online)].pdf 2022-08-02
18 201941018905-CLAIMS [02-08-2022(online)].pdf 2022-08-02
19 201941018905-PatentCertificate18-08-2023.pdf 2023-08-18
20 201941018905-IntimationOfGrant18-08-2023.pdf 2023-08-18
21 201941018905-OTHERS [15-11-2023(online)].pdf 2023-11-15
22 201941018905-EDUCATIONAL INSTITUTION(S) [15-11-2023(online)].pdf 2023-11-15

Search Strategy

1 201941018905E_02-02-2022.pdf

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