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Ultra High Speed Imaging Array With Orthogonal Readout Architecture

Abstract: A plurality of unit pixels in a two dimensional imaging array are arranged in a manner that signal charges along a given row are added to other relevant signal charges of the same row. Signal charges along a given column are added to other relevant signal charges of the same column. Summed charge values are output simultaneously from rows and columns to produce one row and one column of image data. The resulting summed data is temporarily stored in on-chip buffers and then output from the chip during the integration time of the next imaging cycle with no loss in imaging duty cycle.

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Patent Information

Application #
Filing Date
08 February 2013
Publication Number
03/2015
Publication Type
INA
Invention Field
COMMUNICATION
Status
Email
Parent Application

Applicants

THERMO FISHER SCIENTIFIC INC.
81 WYMAN STREET WALTHAM, MASSACHUSETTS 02454 USA

Inventors

1. WADSWORTH, MARK
107 ROLLING MEADOW TRAIL GEORGETOWN, TEXAS 78633 USA

Specification

ULTRA-HIGH SPEED IMAGING ARRAY WITH ORTHOGONAL
READOUT ARCHITECTURE
BACKGROUND OF THE INVENTION
Field of the Invention
[0001] The present invention relates to the field of imaging sensors. More
particularly, the present invention relates to an image sensor configured to sum signal
information from pixels in the imaging array thereby producing a resultant that
includes one row and one column of image data that are thereafter output in a desired
manner during the integration time of the next imaging cycle with no loss in imaging
duty cycle.
Discussion of the Related Art
[0002] Conventional imagers and imaging systems exist for ultra-high speed
photography, realizing image collection at 1 million frames per second and greater.
These systems use imaging arrays constructed from a plurality of photosensitive unit
pixels which convert incident photons into charges.
[0003] A conventional image sensor converts incident photons into electrons that are
collected during an image integration interval and stored in sensor pixels. After an
integration interval is complete, the collected charge is converted into an electronic
signal, for example a voltage, which is output from each pixel via a regular, repetitive
readout cycle. Many pixel architectures have been described in the literature, each
performing the same basic function of conversion of collected signal photons to an
electronic signal and the subsequent output of the signal information from the imaging
device in a controlled fashion. FIG. 1 is an example of a diagram for one typical variety
of an image pixel, generally designated by the reference character 10. Important to the
understanding of the embodiments herein is that each such pixel circuit comprises an
individual image sensor that is a as part of an array that as an arrangement, forms a
two-dimensional imaging array of dimensions "n" by "m." Thus, each pixel in such an
/
arrangement enables charge to be integrated on a capacitive element, in this case a
reverse-biased diode 5, whose capacitance also serves to convert a charge to voltage.
The Field Effect Transistor (FET) 4, as shown in FIG. 1, operates as a switch to
periodically reset the bias on diode 5 to a level applied to FET diffusion lead 1 upon a
clock pulse being applied to the gate 2 input of FET 4. Diode 5 is also shown connected
to a gate 6 of an FET 7. A supply bias (not shown) to FET 7 is applied through the drain
9 of FET 7 while the source 11 of FET 7 is connected through an addressing FET 12
additionally coupled to an array column sense line 14. The column sense line 14 is
designed to be shared with other pixels (not shown) coupled to the same column,
wherein a line of interest can be desirably selected by utilization of a row scanner 16
applying timed pulses along line 17 to the gate of FET 12. As a general method of
operation, the collection of incident signal charge resultant on diode 5 induces a change
of the source voltage 11 resultant on FET 12 that is transferred to column sense line 14
and further through the column scanner 18 to the sensor output 19.
[0004] Depending upon the architecture of the imaging array, photo-generated
charge during each frame may be output via the imaging system at very high data rates
or stored on-chip. On-chip storage typically enables the collection and storage of
multiple frames of data in the imaging chip for later output at standard video frame
rates, for example.
[0005] For ultra-high speed applications however, the performance of conventional
imagers and imaging systems such as that shown in FIG. 1 suffers because all pixels in
the imaging array must be output to obtain the information contained in the full scene.
To illustrate, a two-dimensional imaging array of dimensions "n" pixels by "m" pixels
requires a total of "n * m" pixels to be output to obtain the complete image. This
constitutes a problem of time required for image readout, and hence, for the speed at
which successive images can be collected by the imaging array.
[0006] For current state-of-the-art imaging arrays with no on-chip data storage, the
rate at which successive images can be collected is limited by the time required to
completely output the captured image from the imaging system. Without on-chip
memory a successive image frame can be collected while the previous frame is read out;
however, the first image frame must be completely output from the device before the
next frame can be output. Hence the time between successive frames is controlled by
the output rate of the imager. An exemplary device in which the time between
successive collected images is limited by the total readout time of the imager is
described in the article "A 10,000 Frames/s CMOS Digital Pixel Sensor" by Stuart
Kleinfelder, et.al. IEEE J. Solid State Circuits, 2001, Vol. 36, No.12, 2049-2058.
[0007] For current state-of-the-art imaging arrays with multiple frame on-chip data
storage capability, the rate at which sequential image scenes are collected is not limited
by the readout rate. However, the image duty cycle, that is, the percentage of total time
in which the imaging device is available to actively collect signal from the image scene,
is limited by the total readout time. A device with on-chip data storage may be capable
of gathering sequential images in bursts of very short time intervals. However, once the
on-chip memory is full the device must read out the stored data. During that readout
time the imager is unable to collect and store new image data until the on-chip memory
is read and becomes available for use once more. An exemplary device in which the
image frame rate is not limited by the rate of image readout, but the image duty cycle is
limited by the total readout time is described in the article CMOS Image Sensors for
High Speed Applications" by Munir El-Desouki, et.al. Sensors 2009,9 430-444.
SUMMARY OF THE INVENTION
[0008] Signal information, as utilized by the configured sensor herein, can be
obtained from an acquired image by evaluating data that has been highly compressed
by means of image processing. In particular, the array sensors disclosed herein enable
the collapsing of a two-dimensional image into two lines of one-dimensional data: one
line for the x-dimension (referred to as row) and one line for the y-dimension (referred
to as column). The two resulting data lines are the summed information for all pixels in
/
each column and each row, respectively. These lines of summed data can be used to
obtain the information from the full two-dimensional image. As a novel application of
the present embodiments disclosed herein, for photon counting applications under the
condition where only a few photons impinge upon an imaging array during an
integration interval, the two summed data lines can provide sufficient information for a
complete image reconstruction, including both positional and intensity data. The key
herein is that for a two-dimensional imaging array of dimensions "nu by "m", the
number of required signal output cycles is reduced to a total of "n+mWa s compared to a
total of "n*m" for a state-of-the-art imaging device.
[0009] A first aspect of the present embodiments thus includes an image sensor that
includes an array of sensor pixels, having columns and rows, each pixel including, a
photosensitive region detecting an image, a region integrating and storing the image,
circuitry for providing two identical output signals from each pixel in the array, a
column converting circuit configured to sum the output signals from each of the pixels
common to each column in the imager, respectively, into a one-dimensional column
data signal with one data entry per column; a row summing circuit configured to
simultaneously with the column converting circuit, sum the output signals from each of
I
I the pixels common to each row in the imager respectively, into a one-dimensional row i I data signal with one data entry per row; storage registers capable of temporarily storing
I
I the summed signal data for both the row and column sums; and circuitry controlling
the output of the summed signals off-chip.
[0010] A second aspect of the present embodiments includes a system that includes: ~
an optical multiplier configured to receive an incident optical signal indicative of an
image so as to generate an amplified optical signal; an array of sensor pixels having
rows and columns and configured to receive the amplified optical signal so as to
generate electrical signals corresponding to the amplified optical signal, wherein each
pixel further comprises; a photosensitive region for detecting incident light; a region for
integrating and storing the incoming optical signal; circuitry for converting the optical
i signal into an electrical output; and circuit means for providing two identical output
signals from each pixel in the sensor array, a column converting circuit configured to
sum the output signals from each of the pixels common to each column in the imager,
respectively, into a one-dimensional column data signal with one data entry per
column; a row summing circuit configured to simultaneously with the column
converting circuit, sum the output signals from each of the pixels common to each row
in the imager, respectively, into a one-dimensional row data signal with one data entry
per row, storage registers capable of temporarily storing the summed signal data for
both the row and column sums; wherein the signal and row signal are indicative of a
captured image; circuitry controlling the readout of the summed signals, and a
processor configured to subject recorded spatial and temporal properties of the optical
signals received by said array to deconvolution so as to extract the spectral content in
the captured image.
[0011] Accordingly, the sensor described herein outputs the optically-generated
signal from the unit pixels after a scene integration interval, such as, but not limited to,
ion data received at the end of a configured mass ion quadrupole. Each unit pixel
outputs its signal and, simultaneously, creates a summation of that signal with all of the
signals of all other unit pixels in commonality within that row. An on-chip storage
register captures and holds the information from all rows until after readout of the
information has occurred. Concurrently, each unit pixel outputs its signal and creates a
simultaneous summation of that signal with all of the signals of all other unit pixels in
commonality with that column. An on-chip storage register captures and holds the
information from all columns until after readout of the information has occurred.
[0012] Desirably, each of the configured on-chip storage registers is mediated by
multiplexing devices which control the output of the summed signal(s) off-chip by the
application of appropriate clocking sequences. The output signal comprises the
complete output of the two on-chip storage registers.
i BRIEF DESCRIPTION OF THE DRAWINGS
[0013] FIG. 1 is the schematic circuit representation of a prior art sensor pixel that is
incorporated into an array whose scanning and addressing circuits are shown only in a
block diagram.
[0014] FIG. 2 is the schematic circuit representation of an embodiment of a pixel of
the present invention that is incorporated into an array whose scanning and addressing
circuits are shown only in a block diagram.
[0015] FIG. 3 is the schematic circuit representation of an alternate embodiment of a
pixel of the present invention that is incorporated into an array whose scanning and
addressing circuits are shown only in a block diagram.
[0016] FIG. 4 is a schematic circuit representation of a further beneficial embodiment
of a pixel of the present invention that is incorporated into an array whose scanning and
addressing circuits are shown only in a block diagram.
[0017J FIG. 5 is a functional block diagram of the image sensor disclosed herein.
[0018] FIG. 6 shows a beneficial example configuration of a triple stage mass
spectrometer system that can be operated with the imaging sensor and methods of the
present invention.
[0019] FIG. 7 shows an example beneficial desired time and position detector system
as configured with the novel ultra-high speed array detector, as disclosed herein.
DETAILED DESCRIPTION
[0020] In the description of the invention herein, it is understood that a word
appearing in the singular encompasses its plural counterpart, and a word appearing in
the plural encompasses its singular counterpart, unless implicitly or explicitly
understood or stated otherwise. Furthermore, it is understood that for any given
component or embodiment described herein, any of the possible candidates or
alternatives listed for that component may generally be used individually or in
combination with one another, unless implicitly or explicitly understood or stated
otherwise. Moreover, it is to be appreciated that the figures, as shown herein, are not
necessarily drawn to scale, wherein some of the elements may be drawn merely for
clarity of the invention. Also, reference numerals may be repeated among the various
figures to show corresponding or analogous elements. Additionally, it will be
understood that any list of such candidates or alternatives is merely illustrative, not
limiting, unless implicitly or explicitly understood or stated otherwise. In addition,
unless otherwise indicated, numbers expressing quantities of ingredients, constituents,
reaction conditions and so forth used in the specification and claims are to be
understood as being modified by the term "about."
[0021] Accordingly, unless indicated to the contrary, the numerical parameters set
forth in the specification and attached claims are approximations that may vary
depending upon the desired properties sought to be obtained by the subject matter
presented herein. At the very least, and not as an attempt to limit the application of the
doctrine of equivalents to the scope of the claims, each numerical parameter should at
least be construed in light of the number of reported significant digits and by applying
ordinary rounding techniques. Notwithstanding that the numerical ranges and
parameters setting forth the broad scope of the subject matter presented herein are
approximations, the numerical values set forth in the specific examples are reported as
precisely as possible. Any numerical values, however, inherently contain certain errors
necessarily resulting from the standard deviation found in their respective testing
measurements.
[0022] Turning now to the drawings, FIG. 2 is an exemplary novel circuit diagram of
a representative pixel 200 with block diagram representations of column summation
213 and row summation 216 amplifier circuits, and selecting circuitry, such as, but not
limited to, a column scanner 215 as well as a row scanner 218 circuit. Similar to the
circuit FIG. 1 discussed above, charge integrates on the reverse-biased diode 205, whose
f' capacitance also serves to convert charge to voltage. Such diodes 205 being photodiodes
can also be configured as avalanche photodiodes (internal semiconductor amplifier) to
increase carrier density. Diode 205 may also be replaced by an MOS capacitor
(commonly known as a photogate), a buried photodiode structure, or any electronic
elements which act as a photosite in a semiconductor device. Field-effect transistor
(FET) 204 acts as a switch which periodically resets the bias on diode 205 to the level
applied to FET diffusion 202 by means of a clock pulse applied to gate 203. Diode 205 is
also connected to the parallel combination of the gates of FETs 207 and 208. Power for
both of the FETs is applied to 206. The source of FET 207 is connected to a current
source 209 to the array column sense line 211. It is important to note the beneficial
aspect of the outputs of the FET's 207 and 208 both being tied into a column and a row
for summation at the end of an integration period. Thus, the column sense 211 line is
shared with other pixels of the same column, the outputs of which are summed together
by the column summation amplifier 213. The source of FET 208 is connected to a current
source 210 as well as to the array row sense line 212. The row sense line 212 is shared
with other pixels of the same row, the outputs of which are summed together by the
row summation amplifier 216. The change of source voltage of FET 207 is identical to
that of source voltage of FET 208, and is induced by the collection of incident signal
charge in the pixel on 205. The summed outputs from the column are transferred to
column read line 214 and further directed through the column scanner 215 to the sensor
output 220. The summed outputs from the row are thus transferred to row read line 217
and further through the row scanner 218 to the sensor output 219.
[0023] FIG. 3 illustrates an alternate beneficial circuit diagram of a representative
pixel 300 with block diagram representations of column summation 313 and row
summation 317 amplifier circuits and selective circuitry such as, but not limited to, a
column scanner 315 and a row scanner 319 circuit. Charge integrates on the reversebiased
diode 305, which can also be configured as avalanche photodiode to increase
carrier density whose capacitance also serves to convert charge to voltage. Diode 305
may also be replaced by an MOS capacitor (commonly known as a photogate), a buried
9
+
photodiode structure, or any electronic elements which act as a photosite in a
semiconductor device. FET 304 acts as a switch which periodically resets the bias on
diode 305 to the level applied to FET diffusion 302 by means of a clock pulse applied to
gate 303, as known to those skilled in the art. Diode 305 is also connected to the gate of
FET 307. Power for FET 307 is applied to 306. It is important to note that there are now
two capacitors 309 and 310 in FIG. 3 that are beneficially coupled into one amplifier
unlike the circuitry of FIG. 2. In particular, the source of FET 307 is connected to a
current source 308 and additionally to one plate of each of two capacitors 309 and 310.
The remaining plates of 309 and 310 coupled to the array column sense line 312 and the
array row sense line 311, respectively. The column sense line is shared with other pixels
of the same column, the outputs of which are summed together by the column
summation amplifier 313. Similarly, the row sense line is shared with other pixels of the
same row, the outputs of which are summed together by the row summation amplifier
317. The summed outputs from the column summation amplifier are thus transferred to
column read line 314 and further through the column scanner 315 to the sensor output
316 via a controller capable of such operations. Moreover, the summed outputs from the
row summation amplifier are thus transferred to row read line 318, and further through
the row scanner 319 to the sensor output 320.
[0024] FIG. 4 illustrates another alternate beneficial circuit diagram of a
representative pixel, as shown referenced by the numeral 400. Such a beneficial pixel
further 400 comprises block diagram representations of a column summation 413
amplifier circuit and a row summation amplifier circuit 417 and selective circuitry such
as, but not limited to, a column scanner circuit 415, a row scanner circuit 419, a row
pixel select scanner circuit 423, and a column pixel select scanner circuit 424. Charge
integrates on a reverse-biased diode 405, which can also be configured as avalanche
photodiode to increase carrier density whose capacitance also serves to convert charge
to voltage. Diode 405 may also be replaced by an MOS capacitor (commonly known as a
photogate), a buried photodiode structure, or any electronic elements as known to those
skilled in the art, which act as a photo-site in a semiconductor device. FET 404 acts as a
10
f
switch which periodically resets the bias on diode 405 to the level applied to FET
diffusion connector 402 by means of a clock pulse applied to gate 403, as known to
those skilled in the art. Diode 405 is also coupled to the gate of FET 406. Power for FET
406 is applied to 407.
[0025] It is important to note in FIG. 4 that in addition to two capacitors 409 and
410, there are two selection FETs 421 and 422 that control the pixel output to the
summation amplifiers 413 and 417. The source of FET 406 is coupled (e.g., see reference
character 407') to a current source 408 and additionally to the source nodes of select
FETs 421 and 422, which in turn couple to one plate of each of two capacitors 409 and
410. The remaining plates of 409 and 410 couple to an array column sense line 412 and
an array row sense line 411, respectively. The column sense line 412 is shared with other
pixels of the same column, the outputs of which are summed together by the column
summation amplifier 413. Similarly, the row sense line 411 is shared with other pixels of
the same row, the outputs of which are summed together by the row summation
amplifier 417. The row pixel select scanner 423 (as directed via input 423') provides
control over which of the pixels in each column are selected to be part of the summed
output, and furthermore controls whether the summation is performed simultaneously
in a parallel manner or in a pixel by pixel scanned manner. The column pixel select
scanner 424 (as directed via input 424') provides control over which of the pixels in each
row are selected to be part of the summed output, and furthermore controls whether
the summation is performed simultaneously in a parallel manner or in a pixel by pixel
scanned manner. The summed outputs from the column summation amplifier are thus
transferred to column read line 414 and further through the column scanner 415 to the
sensor output 416 via a controller capable of such operations. Moreover, the summed
outputs from the row summation amplifier 417 are thus transferred to row read line
418, and further through the row scanner 419 to the sensor output 420.
[0026] FIG. 5, as referenced by the numeral 500, illustrates a beneficial and
functional block diagram of an imaging system of the present embodiments. FIG. 5 thus
geI!ierally illustrates an imaging system 500 comprised of an array of pixels 501, wherein
an individual pixel can be configured as shown in FIG. 2, FIG. 3, FIG. 4 or other
configurations allowing for the formation of a summed column line and a summed row
line output as discussed above. The array 501 of such pixels thus receives an image and
generates collectively an electrical embodiment of a scene integration that is very
beneficial to where only a few photons impinge upon the imaging array 501 but
wherein such photons are inclusive of useful information (e.g., the photon converted
output of a mass spectrometer quadrupole or the collection of photons related to
astronomical observations).
[0027l As shown in FIG. 5, a row register, such as a row summation amplifier circuit
503, thus receives a row data line while a column register, such as a column summation
amplifier circuit 502 receives a column data line. Selecting circuitry, such as, but not
limited to column scanner 507 and row scanner 508 couples to the row register and
column registers generally described above. For each image, the selecting circuitry (e.g.,
column scanner 507 and row scanner 508) controls outputting a row data line and a
column data line simultaneously. The respective elements within the row data line and
the column data line may be optionally weighted. As also shown in FIG. 5, output
amplifiers 504 and 505 provide the interface of the summed information to the outside
world so as to provide useful time and importantly, sparse spatial information.
[0028] In operation, signal information is thus obtained from the image by
evaluating data by collapsing a two-dimensional image into two data lines of onedimensional
data: a row data line includes x-dimension data and a column data line
includes y-dimension data. The row and column data lines are the summed information
for all pixels in each column and each row, respectively. These lines of summed data
can be used to obtain the information from the full two-dimensional image.
[0029] For example, as stated above, the present embodiments are very beneficial for
photon counting applications under the condition where only a few photons impinge
upon the imaging array (e.g., the output of a mass spectrometer quadrupole) during an
integration interval. Specifically, the two summed data lines provide sufficient
information for a complete image reconstruction, including both positional and
intensity data. To reiterate, for a two-dimensional imaging array of dimensions "n" by
"m", where n is number of rows and m is the number of columns, the number of
required signal output cycles is reduced to a total of "n+mr' as compared to a total of
" n*m" for a state-of-the-art imaging device.
[0030] To provide further details of the present embodiments, at the beginning of a
data gathering cycle, charge is cleared from the imaging array 501 via known methods
in the art and incoming photons are allowed to collect in the two-dimensional m x n
i photoactive array of pixels 501. At the end of the image gathering cycle, a
1 representation of "a" signal collected in each pixel, such as a pixel shown in FIG. 3 or
FIG. 4 discussed above, of array 501 is summed in both the horizontal direction and the
vertical direction in a row-by-row and column-by-column fashion. To output the
summed signal information, column scanner 507 and row scanner 508 are enabled. The
summed output corresponding to the selected row and column then become available
at the output of the chip, 504 and 505, for readout. The scanners 507 and 508 can then be
incremented, if desired and additional rows and columns can be read. In the most
standard mode of operation, the scanners are incremented and the readout process is
repeated until all m rows and all n columns are read from the chip. In this manner a full
readout of the array can be seen to consist of m+n reads, as compared to a standard
imaging device which requires the product of m and n read for complete readout.
[0031] The embodied system, as stated above, is most useful in situations where
very few photons are present in the incoming scene. FIG. 5 also shows a
photomultiplier device 509 in the signal path (i.e., in front of the array). This
photomultipler 509 can be any device that provides amplification of incident photons. A
typical photomultiplier example is a microchamel plate or any other photomultiplier
known to those skilled in the art. The photomultiplier or microchannel plate thus
creates a packet of photons (or other detectable particles such as electrons) for each
inchent photon. In this way the size of the signal generated by a single photon can be
increased to a level above the noise floor of the device 500, thereby allowing for
unambiguous detection of single photons.
[0032] An alternative to providing amplification before the array can also be by way
of internal carrier amplification, e.g., an avalanche multiplier, a photon amplifier, etc.,
configured within the example pixels of FIG. 2, FIG. 3, and FIG. 4. This also ensures an
increase in signal-to-noise for ease of detection of desired signals. One or more frame
buffers may also be provided for outputting data to a display. In addition, as part the
overall design, circuitry can be configured for addressing and outputting the summed
electrical signal from each row in parallel for readout off-chip and/or for addressing
and outputting the summed electrical signal from each row in a sequential fashion for
readout off-chip.
Mass Quadrupole Example Application in use with Detector Array
[0033] Turning back to the drawings, FIG. 6 shows a beneficial example
configuration of a triple stage mass spectrometer system (e.g., a commercial Fimigan
TSQ), as shown generally designated by the reference numeral 600 having an ultra-high
speed imaging array with orthogonal readout architecture configured in the detector
assembly 666 of the system. It is to be appreciated, however, that the mass spectrometer
system 600 illustrated in FIG. 6 is presented by way of a non-limiting beneficial example
and thus the present array-detector invention may also be practiced in connection with
other mass spectrometer systems and/or other systems having architectures and
configurations different from those depicted herein. Moreover and importantly, the
quadrupole mass spectrometer system 600 shown in FIG. 6 differs from a conventional
quadrupole mass-spectrometer in that the present invention includes the ultra-high
speed imaging array with orthogonal readout architecture, position-sensitive detector
assembly 666 for observing ions as they exit the quadrupole, while the latter merely
counts ions without recording the relative positions of the ions.
[0034] The operation of mass spectrometer 600 can be controlled and data can be
acquired by a controller and data system (not depicted) of various circuitry of a known
type, which may be implemented as any one or a combination of general or specialpurpose
processors (digital signal processor (DSP)), firmware, software to provide
instrument control and data analysis for not only the ultra-high speed array detector
assembly 666 disclosed herein but also for other mass spectrometers and/or related
instruments, and/or hardware circuitry configured to execute a set of instructions that
enable the control of such instrumentation. Such processing of the data received from
the ultra-high speed array detector assembly 666 and associated instruments may also
include averaging, scan grouping, deconvolution, library searches, data storage, and
data reporting.
[0035] It is also to be appreciated that instructions to the system 600, of which includes
the ultra-high speed array detector assembly 666, may also include the merging of data, the
exporting/displaying/outputting to a user of results, etc., and may be executed via a data
processing based system (e.g., a controller, a computer, a personal computer, etc.), which
includes hardware and software logic for performing the aforementioned instructions and
control functions of the system 600.
[0036] In addition, such instruction and control functions, as described above, can also
be implemented by a mass spectrometer system 600, as shown in FIG. 6, as provided by a
machine-readable medium (e.g., a computer-readable medium). A computer-readable
medium, in accordance with aspects of the present invention, refers to mediums known
and understood by those of ordinary skill in the art, which have encoded information
provided in a form that can be read (i.e., scanned/sensed) by a machine/computer and
interpreted by the machine's/computer's hardware and/or software.
[0037] Thus, as mass spectral data of a given spectrum is received by a beneficial ultrahigh
speed array detector assembly 666 as directed by the quadrupole 664 configured in
system 600, as shown in FIG. 6, the information embedded in a computer program of the
present invention can be utilized, for example, to extract data from the mass spectral data,
which corresponds to a selected set of mass-to-charge ratios. In addition, the information
embedded in a computer program of the present invention can be utilized to carry out
methods for normalizing, shifting data, or extracting unwanted data from a raw file in a
manner that is understood and desired by those of ordinary skill in the art.
[0038] Turning back to the example mass spectrometer 600 system of FIG. 6, a
sample containing one or more analytes of interest can be ionized via an ion source 652
operating at or near atmospheric pressure or at a pressure as defined by the system
requirements. Accordingly, the ion source 652 can include, but is not strictly limited to,
an Electron Ionization (EI) source, a Chemical Ionization (CI) source, a Matrix-Assisted
Laser Desorption Ionization (MALDI) source, an Electrospray Ionization (ESI) source, an
Atmospheric Pressure Chemical Ionization (APCI) source, a Nanoelectrospray
Ionization (NanoESI) source, and an Atmospheric Pressure Ionization (API), etc.
[0039] The resultant ions are directed via predetermined ion optics that often can
include tube lenses, skimmers, and multipoles, e.g., reference characters 653 and 654,
selected from radio-frequency RF quadrupole and octopole ion guides, etc., so as to be
urged through a series of chambers of progressively reduced pressure that operationally
guide and focus such ions to provide good transmission efficiencies. The various
chambers communicate with corresponding ports 680 (represented as arrows in the
figure) that are coupled to a set of pumps (not shown) to maintain the pressures at the
desired values.
[0040] The example system 600 of FIG. 6 is shown illustrated to also include a triple
stage configuration 664 having sections labeled Q1, Q2 and Q3 electrically coupled to
respective power supplies (not shown) so as to perform as a quadrupole ion guide that
can also be operated under the presence of higher order multipole fields (e.g., an
octopole field) as known to those of ordinary skill in the art. It is to be noted that such
pole structures of the present invention can be operated either in the radio frequency
(RF)-only mode or an RF/ DC mode. Depending upon the particular applied RF and DC
potentials, only ions of selected charge to mass ratios are allowed to pass through such
structures with the remaining ions following unstable trajectories leading to escape from
the applied multipole field. When only an RF voltage is applied between predetermined
electrodes (e.g., spherical, hyperbolic, flat electrode pairs, etc.), the apparatus is operated
to transmit ions in a wide-open fashion above some threshold mass. When a
combination of RF and DC voltages is applied between predetermined rod pairs there is
both an upper cutoff mass as well as a lower cutoff mass. As the ratio of DC to RF
voltage increases, the transmission band of ion masses narrows so as to provide for mass
filter operation, as known and as understood by those skilled in the art.
[0041] Accordingly, the RF and DC voltages applied to predetermined opposing
electrodes of the multipole devices of the present invention, as shown in FIG. 6 (e.g.,
Q3), can be applied in a manner to provide for a predetermined stability transmission -
window designed to enable a larger transmission of ions to be directed through the
instrument, collected at the exit aperture by the ultra-high speed array detector 566 and
processed so as to determine mass characteristics.
[OM21 It is to be appreciated that ions while contained within a quadrupole
instrument, e.g., Q3 of FIG. 6, with fixed initial conditions, e.g., m/z, RF and DC
voltages, are desirably field-induced to follow an oscillatory trajectory having spatial
beam characteristics that vary as a function of axial displacement along the length of the
quadrupole. As a result, the beam traces out a spatial node pattern of narrower and
wider regions along the length of the device that can be observed at the exit aperture of
the instrument but has hereinbefore not been provided in the art.
[OM31 However, a simplistic configuration to observe such varying characteristics
with time is by way of the ultra-high speed array detector assembly 666 as disclosed
herein. In effect it is to be noted that there are multiple mass ion positions at a
predetermined spatial plane at the exit aperture of a quadrupole as correlated with time,
each with different detail and signal intensity. To beneficially record such information,
the spatial/ temporal detector ultra-high speed array detector assembly 666
configurations of the present invention are in effect somewhat of a multiple pinhole
C
array that essentially provides multiple channels of resolution to spatially record the
individual shifting patterns as images that have the embedded mass content.
Importantly, the present ultra-high speed array detector assembly 666 configured in the
system 600 of FIG. 6 enables the acquisition of the desired ion data in the form of the
one or more images as a function of RF phase at each RF and/or applied DC voltage
because the applied RF and DC voltages can be configured to step or slew
deterministically with the RF phase. Upon being recorded, the present invention can by
controlled to thus exploit the full mass spectral content in the array of recorded image(s)
by way of a constructed model that utilizes all of the information of the expected ion exit
patterns.
- [0044] The present invention exploits such varying characteristics by collecting the
spatially dispersed ions of different m/z via the ultra-high speed array detector assembly
666 even as they exit the quadrupole 664 at essentially the same time. For example, at a
given instant in time, the ions of mass A and the ions of mass B can lie in two distinct
clusters in the exit cross section of the instrument. The present invention acquires the
dispersed exiting ions with a time resolution on the order of 10 RF cycles, more often down
to an RF cycle (e.g., a typical RF cycle of 1 MHz corresponds to a time frame of about 1
microsecond) or with sub RF cycle specificity to provide data in the form of one or more
collected images as a function of the RF phase at each RF and/or applied DC voltage. Once
collected, the present invention can extract the full mass spectral content in the captured
image(s) of the ultra-high speed array detector assembly 566 via a constructed model that
deconvolutes the ion exit patterns and thus provide desired ion signal intensities even
while in the proximity of interfering signals.
[0045] FIG. 7 illustrates a functional configuration, as referenced by the numeral 700,
for the array detector assembly array 666 of FIG. 6. Ions from the quadrupole spectrometer
impinge upon the ion-to-photon converter consisting of the microchannel plate 702 and the
phosphor converter screen 704. The resulting optical output from the converter is focused
onto the ultra-high-speed array detector 712 by means of an optical conduit 708.
k L
Accordingly, a time series of images representing the arrival of ions at 702 received at the
ultra-high speed imaging array detector 712 (denoted as 666 in FIG. 6) can be acquired at a
high temporal sampling rate because of the collapsing of the two-dimensional image into
two lines of one-dimensional data: one line for the x-dimension (referred to as row) and
one line for the y-dimension (referred to as column) all while the applied DC offset and RF
amplitude are ramped. A deconvolution algorithm thereafter reconstructs the distribution
of ion mass-to-charge ratio values that reach the detector 712 (denoted as 666 in FIG. 6),
providing a "mass spectrum", actually a mass-to-charge ratio spectrum. Given the high
data rate and computational requirements of the present invention, a graphics processing
unit (GPU) is often used to convert the data stream into mass spectra in real time.
[0046] Having described preferred embodiments of the novel image sensw whose
pixels incorporate means for simultaneous summed readout of all pixels in orthogonal
fashion, which are intended to be illustrative and not limiting, it is noted that modification
and variations can be made by persons skilled in the art in light of the above teachings. It is
I therefore to be understood that changes may be made in the particular embodiments of the
invention disclosed which are within the scope and spirit of the invention defined by the
following claims.

We claim:
1. An image sensor, comprising:
an array of sensor pixels, having columns and rows, wherein a discrete
pixel that makes up said array of sensor pixels further comprises;
a photosensitive region detecting an image,
a region integrating and storing said image,
circuitry for providing a pair of identical output signals from each of said
discrete pixels that makes up said array of sensor pixels,
a plurality of column circuits configured one per each column in said image
sensor and further configured to sum one of said pair of identical signals generated in a
particular discrete pixel with said signal from each of a group of selected said discrete
pixels in a common column for each imager column into a summed column data signal;
and
a plurality of row circuits configured one per each row in said image sensor
and further configured to sum a second of said pair of identical signals generated in
said particular discrete pixel with said signal from each of a group of selected said
discrete pixels in a common row for each imager row into a summed row data signal.
2. The sensor of claim 1 further comprising circuitry for the storage of each
of the summed column data signals, one per column; and circuitry for the storage of
each of the summed row data signals, one per row.
3. The sensor of claim 1, further comprising circuitry for storage of each of
the summed column data signals, one per column; circuitry for the storage of each of
the summed row data signals, one per row; and a configured sensor circuitry coupled to
an array of sensor pixels, having columns and rows, wherein a discrete
pixel that makes up said array of sensor pixels further comprises;
a photosensitive region detecting an image,
a region integrating and storing said image,
circuitry for providing a pair of identical output signals from each of said
discrete pixels that makes up said array of sensor pixels,
a plurality of column circuits configured one per each column in said image
sensor and further configured to sum one of said pair of identical signals generated in a
particular discrete pixel with said signal from each of a group of selected said discrete
pixels in a common column for each imager column into a summed column data signal;
and
a plurality of row circuits configured one per each row in said image sensor
and further configured to sum a second of said pair of identical signals generated in
said particular discrete pixel with said signal from each of a group of selected said
discrete pixels in a common row for each imager row into a summed row data signal;
a configured column storage circuitry for the storage of each of the summed
column data signals, one per column, in a one-dimensional data ~ format ;and l a configured row storage circuitry for the storage of each of the summed
row data signals, one per row, in a one-dimensional data format; and
a processor configured to subject recorded spatial and temporal properties
of said optical signals received by said array to deconvolution so as to extract the
spectral content in said captured image.
12. The system of claim 11, wherein said optical multiplier is a microchannel
plate.
13. The system of claim 11, further comprising internal semiconductor
carrier amplification to amplify the incident optical signal after image detection.
14. The system of claim 11, further comprising a sensor circuitry coupled to
said array and configured for outputting said one-dimensional column signal and said
one-dimensional row signal.
15. The system of claim 11, wherein said sensor circuitry is further
configured for addressing and outputting the summed electrical signal from each row
in parallel for readout off-chip.
16. The system of claim 11, wherein said sensor circuitry is further
configured for addressing and outputting the summed electrical signal from each row
sequentially for readout off-chip.
17. The system of claim 11, wherein said sensor circuitry is further
configured for addressing and outputting the summed electrical signal from each
column in parallel for readout off-chip.
18. The system of claim 11, wherein said sensor circuitry is further
configured for addressing and outputting the summed electrical signal from each
column sequentially for readout off-chip.

Documents

Application Documents

# Name Date
1 366-del-2013-Claims-(08-02-2013).pdf 2013-02-08
2 366-del-2013-Form-18-(11-02-2013).pdf 2013-02-11
3 366-del-2013-Correspondence Others-(11-02-2013).pdf 2013-02-11
4 366-del-2013-Correspondence Others-(12-03-2013).pdf 2013-03-12
5 366-del-2013-Correspondence Others-(13-03-2013).pdf 2013-03-13
6 366-del-2013-Form-3-(06-08-2013).pdf 2013-08-06
7 366-del-2013-Correspondence-Others-(06-08-2013).pdf 2013-08-06
8 366-del-2013-GPA.pdf 2013-08-20
9 366-del-2013-Form-5.pdf 2013-08-20
10 366-del-2013-Form-3.pdf 2013-08-20
11 366-del-2013-Form-2.pdf 2013-08-20
12 366-del-2013-Form-1.pdf 2013-08-20
13 366-del-2013-Drawings.pdf 2013-08-20
14 366-del-2013-Description(Complete).pdf 2013-08-20
15 366-del-2013-Correspondence-others.pdf 2013-08-20
16 366-del-2013-Claims.pdf 2013-08-20
17 366-del-2013-Abstract.pdf 2013-08-20
18 366-DEL-2013-GPA-(07-08-2014).pdf 2014-08-07
19 366-DEL-2013-Form-3-(07-08-2014).pdf 2014-08-07
20 366-DEL-2013-Correspondence-Others-(07-08-2014).pdf 2014-08-07
21 366-del-2013-Form-3-(06-02-2015).pdf 2015-02-06
22 366-del-2013-Correspondence Others-(06-02-2015).pdf 2015-02-06
23 366-del-2013-Form-3-(10-08-2015).pdf 2015-08-10
24 366-del-2013-Correspodence Others-(10-08-2015).pdf 2015-08-10
25 Form 3 [09-08-2016(online)].pdf 2016-08-09
26 Other Document [17-08-2016(online)].pdf 2016-08-17
27 Form 13 [17-08-2016(online)].pdf 2016-08-17
28 Description(Complete) [17-08-2016(online)].pdf 2016-08-17
29 366-DEL-2013-Power of Attorney-190816.pdf 2016-08-23
30 366-DEL-2013-Correspondence-190816.pdf 2016-08-23
31 366-DEL-2013-FORM 3 [15-09-2017(online)].pdf 2017-09-15
32 366-DEL-2013-FER.pdf 2018-02-21
33 366-DEL-2013-AbandonedLetter.pdf 2019-01-24

Search Strategy

1 366DEL2013_PATSEER_SEARCH_01-12-2017.pdf