Docket No. PMAA-16165-PCT
1
DESCRIPTION
VEHICLE AUXILIARY POWER SUPPLY DEVICE
5 Field
[0001] The present invention relates, for example, to a vehicle auxiliary power supply device mounted in an electric rolling stock and that supplies desired power to a load.
10
Background
[0002] As a conventional vehicle auxiliary power supply device, for example, in a vehicle auxiliary power supply device disclosed by Patent Literature 1, a pulse width
15 modulation (PWM) converter is connected to an output
terminal of a main transformer that transforms and outputs an AC input supplied from an AC overhead line; and in a configuration in which a three-phase inverter is connected to an output terminal of the PWM converter, a filter
20 circuit that removes a' harmonic component included in an output voltage of the three-phase inverter is disclosed.
Citation List Patent Literature 25 [0003] Patent Literature 1: Japanese Patent No. 4391339
Summary
Technical Problem
[0004] ... Since many loads are mounted in an electric 30 rolling stock, large current flows in the loads. Thus,
even in a filter circuit, a size of a reactor included in the filter circuit is large. In view of reduction of weight, reduction of a cost, and the like, there is a

Docket No. PMAA-16165-PCT 2
demand for further downsizing of the reactor. [0005] The present invention is made in view of the foregoing and is to provide a vehicle auxiliary power supply device that is configured in such a manner that 5 further downsizing can be realized.
Solution to Problem
[0006] In order to solve the above-described problem and
to achieve an object, the present invention relates to a
10 vehicle auxiliary power supply device mounted in an
electric rolling stock: and the device includes a converter device to convert first DC power supplied from a DC power supply into second DC power, and a three-phase inverter to convert the DC power supplied from the converter device
15 into three-phase AC power and to supply the converted power to a load, wherein a switching element of the three-phase inverter is constituted by a semiconductor module formed of a wide bandgap semiconductor.
20 Advantageous Effects of Invention
[0007] According to the present invention, an effect of
being able to further downsize a vehicle auxiliary power
supply device mounted in an electric rolling stock is
achieved. 25
Brief Description of Drawings
[0008] FIG. 1 is a diagram illustrating a configuration
example including a vehicle auxiliary power supply device
according to a first embodiment. 30 FIG. 2 is a diagram illustrating a circuit
configuration of a three-phase inverter according to the
first embodiment illustrated in FIG, 1.
FIG. 3 is a diagram illustrating a circuit

Docket No. PMAA-16165-PCT 3
configuration of a three-phase inverter as a comparison example.
FIG. 4 is a diagram illustrating a configuration example of a vehicle auxiliary power supply device 5 according to a second embodiment.
FIG. 5 is a diagram illustrating a circuit configuration of a single-phase inverter according to the second embodiment illustrated in FIG. 4.
FIG. 6 is a diagram illustrating a circuit 10 configuration of a single-phase inverter as a comparison example.
Description of Embodiments
[0009] In the following, vehicle auxiliary power supply
15 devices according to embodiments of the present invention will be described with reference to the attached drawings. Note that the present invention is not limited by the embodiments described below. [0010] First Embodiment.
20 FIG. 1 is a diagram illustrating a configuration
example including a vehicle auxiliary power supply device according to the first embodiment and illustrating an example of supplying desired power {AC power) to a load 4 by using DC power from a DC power supply 1. The DC power
25 supply 1 means a source of supply of DC power. For example, the DC power supply corresponds to: a DC overhead line in an electric rolling stock; an AC-DC converter (converter) to convert power supplied from an AC overhead line, whose power is input through a main transformer, into DC power; a
30 battery that can supply DC power in a case where the battery is mounted.
[0011] As illustrated in FIG. 1, a vehicle auxiliary power supply device 100A includes a converter device 2, a

Docket No. PMAA-16165-PCT
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three-phase inverter 3A, a filter reactor 5, and a filter capacitor 6. The converter device 2 includes a single-phase inverter 21, a transformer 22, and a rectifier circuit 23. The filter reactor 5 is conned to an output 5 side of a three-phase inverter 3. One end side of the
filter capacitor 6 is connected in a Y-shape and the other end side thereof is connected to the filter reactor 5. These filter reactor 5 and filter capacitor 6 operate as low-pass filter circuits to operate in such a manner that a
10 harmonic included in the three-phase inverter 3 is
decreased and that voltage applied to the load 4 further becomes a sinusoidal waveform.
[0012] The converter device 2 converts DC power (first DC power) supplied from the DC power supply 1 into stepped-
15 down DC power (second DC power) and supplies the converted second DC power to the three-phase inverter 3A. The three-phase inverter 3A converts the DC power supplied from the converter device 2 into AC power and supplies the converted AC power to the load 4.
20 [0013] A voltage step-down function by the converter device 2 is realized by the single-phase inverter 21, the transformer 22, and the rectifier circuit 23. More specifically, DC power supplied from the DC power supply 1 is once converted into AC power by the single-phase
25 inverter 21 and is input into the transformer 22, and is
converted into stepped-down AC power by the transformer 22. As the AC power is converted into DC power by the rectifier circuit 23, the stepped-down DC power is supplied to the three-phase inverter 3A.
30 [0014] FIG. 2 is a diagram illustrating a circuit
configuration of the three-phase inverter 3A according to the first embodiment illustrated in FIG. 1. The three-phase inverter 3A is constituted by serial connection of:

Docket No. PMAA-16165-PCT
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positive arms (such as UPI in U-phase) indicated by switching elements UPI, VPI, and WPI; and negative arms (such as UNI in U-phase) indicated by switching elements UNI, VNI, and WNI. That is, in the three-phase inverter 3A, 5 a three-phase bridge circuit by three pairs of switching elements (for U-phase, V-phase, and W-phase) in each of which positive and negative arms are connected in series is constituted. [0015] Each of the switching element (UPI, VPI, WPI, UNI,
10 VNI, and WNI) is constituted by inverse parallel connection of a metal-oxide-semiconductor field-effect transistor (MOSFET) formed of silicon carbide (SiC) (SiC-MOSFET); and a free wheeling diode (FWD) that is also formed of SiC (SiC-FWD). Note that as the SiC-FWD, a Schottky barrier
15 diode having a characteristic that a forward voltage is low and a recovery current hardly flows is preferably used. [0016] Moreover, in the present embodiment, the three-phase inverter 3A is constituted by utilization of a 2-in-l module in which two switching elements are connected in
20 series and housed in one package. When 2-in-l modules 30U, 30V, and 30W that are full SiC modules are used, the three-phase inverter 3A can be constituted by the three modules, whereby the number of modules can be decreased and the number of wiring lines between modules can be decreased.
25 Thus, an advantageous effect of contributing to reduction of a size and a cost of a device is achieved. [0017] Note that silicon carbide (SiC) is an example of a semiconductor called a wide bandgap semiconductor. Other than silicon carbide, a semiconductor formed, for example,
30 by utilizing a gallium nitride-based material or diamond also belongs to a wide bandgap semiconductor. Thus, a configuration of using a different wide bandgap semiconductor other than silicon carbide is also included

Docket No. PMAA-16165-PCT 6
in the spirit of the present invention. [0018] FIG. 3 is a diagram illustrating a circuit configuration of a three-phase inverter 3 as a comparison example. As illustrated in FIG. 3, the three-phase 5 inverter 3 is generally constituted by six modules
(hereinafter, referred to as "Si module") in each of which an insulated gate bipolar transistor (IGBT) formed of a silicon (Si)-based material (Si-IGBT) and an FWD that is also formed of an Si-based material (Si-FWD) are inversely
10 connected in parallel.
[0019] In a case of using the three-phase inverter 3 constituted by the Si modules, a filter reactor 5 connected to an output side of the three-phase inverter 3 and a filter capacitor 6 one end side thereof is connected in a
15 Y-shape and the other end side thereof is connected to the filter reactor 5 become essential. These filter reactor 5 and filter capacitor 6 operate as low-pass filter circuits to operate in such a manner that a harmonic included in the three-phase inverter 3 is decreased and that voltage
20 applied to a load 4 further becomes a sinusoidal waveform. [0020] In a case where an Si element is used as a switching element, it is impossible to make a switching element frequency higher compared to a frequency when an SiC element is used. For example, in the Si-IGBT, it is
25 impossible to make a switching frequency high due to a
limit in loss. For example, a limit value is around 5 kHz. [0021] On the other hand, in a case where an SiC element is used as a switching element, it is possible to set a switching frequency to be more than 10 times as high as
30 that of an Si element. For example, when the SiC element is driven at a switching frequency of around 50 kHz, it becomes possible to reduce sizes of the filter reactor 5 and the filter capacitor 6 into around 1/10. When the

Docket No. PMM-16165-PCT 7
three-phase inverter 3A according to the first embodiment is constituted by SiC modules, it becomes possible to downsize the filter reactor 5 and the filter capacitor 6 significantly. 5 [0022] Moreover, in a case of driving the SiC element at a switching frequency exceeding 60 to 70 kHz, it is possible to omit one or both of the filter reactor 5 and the filter capacitor 6 depending on a stray inductance and stray capacitance of a main circuit wiring line or the load
10 4, whereby it is possible to reduce a size and weight of a whole device.
[0023] On-resistance of the SiC element is lower and an allowable operating temperature of the SiC element is much higher than those of the Si element, thus the SiC element
15 contributes to reduction of a size and a cost of a cooler. [0024] As described above, in a vehicle auxiliary power supply device constituted by a semiconductor module with a switching element of a three-phase inverter being formed of a silicon-based material, there has been a problem that an
20 output side of the three-phase inverter is large and heavy due to a filter reactor and a filter capacitor. On the other hand, according to the vehicle auxiliary power supply device of the first embodiment, a semiconductor module formed of a wide bandgap semiconductor is used as a
25 switching element of a three-phase inverter instead of a semiconductor module formed of a silicon-based material. Thus, it is possible to form a configuration in such a manner that a filter circuit is omitted or downsized greatly and to acquire an effect of being able to further
30 downsize a vehicle auxiliary power supply device mounted in an electric rolling stock. [0025] Second Embodiment.
FIG. 4 is a diagram illustrating a configuration

Docket No. PMAA-16165-PCT 8
example of a vehicle auxiliary power supply device according to the second embodiment and FIG. 5 is a diagram illustrating a circuit configuration of a single-phase inverter 2IB according to the second embodiment illustrated 5 in FIG. 4. In the vehicle auxiliary power supply device 100A according to the first embodiment, a case where the three-phase inverter 3A to drive the load 4 is constituted by a full SiC module has been described. However, in the second embodiment, as illustrated in FIG. 5, a single-phase
10 inverter 21B included in a converter device 2 is
constituted by a full SiC module in addition to the configuration of the first embodiment. Since the single-phase inverter 21B is constituted by the full SiC module, it becomes possible to use a further-downsized transformer
15 22B. Note that the other configurations are identical or equivalent to the configurations of the first embodiment illustrated in FIG. 1 and FIG. 2. Thus, identical signs are assigned to those configuration parts and overlapped description is omitted.
20 [0026] FIG. 6 is a diagram illustrating a circuit
configuration of a single-phase inverter as a comparison example. Obviously, in the vehicle auxiliary power supply device according to the first embodiment, it is also possible to use a single-phase inverter 21 illustrated in
25 FIG. 6. As illustrated in FIG. 6, the single-phase inverter 21 is constituted by four Si modules. [0027] In the single-phase inverter 21 constituted by Si-IGBTs, it is difficult to make a switching frequency as high as the case of the three-phase inverter 3. On the
30 other hand, a cross-sectional area of an iron core in a transformer 22 and the number of turns of a coil wound around the iron core are inversely proportional to a frequency of an applied alternating voltage. Thus, when

Docket No. PMAA-16165-PCT 9
the transformer 22 arranged in the subsequent stage of the single-phase inverter 21 including the Si modules and the transformer 22B arranged in the subsequent stage of the single-phase inverter 2IB including the Sic module are 5 compared, a size of the transformer 22B inevitably becomes smaller. That is, according to the vehicle auxiliary power supply.device of the second embodiment, an .effect of being able to reduce a size of a transformer arranged in a following stage of a single-phase inverter is acquired.
10 [0028] In the second embodiment, an embodiment in which both of a semiconductor module included in a three-phase inverter and a semiconductor module included in a single-phase inverter are constituted by full SiC modules has been described. However, only the semiconductor module included
15 in the single-phase inverter may be constituted by the full SiC module. With such a configuration, an effect of downsizing a transformer can be also acquired. [0029] As described above, according to the vehicle auxiliary power supply device of the first embodiment, a
20 semiconductor module formed of a wide bandgap semiconductor is used as a switching element of a single-phase inverter in a converter device instead of a semiconductor module formed of a silicon-based material, whereby an effect of being able to reduce a size of a transformer arranged in
25 the subsequent stage of the single-phase inverter is acquired.
[0030] Note that configurations described in the above first and second embodiments are examples of a configuration of the present invention. It is obvious that
30 combination with a different known-technology is possible and configuration with modification such as omission of a part is also possible within the spirit and the scope of the present invention.

Docket No. PMM-16165-PCT 10
[0031] For example, in each of the first and second embodiments, a rectifier circuit is arranged in the subsequent stage of a transformer. However, a bridge-connected single-phase converter having a voltage 5 conversion function may be used. In this case, when a semiconductor module of the single-phase converter is constituted by a full SiC module, it is possible to downsize a cooler to cool the single-phase converter and to contribute to reduction of a size and a cost of a device.
10
Industrial Applicability
[0032] As described above, the present invention is useful as a vehicle auxiliary power supply device configured in such a manner that further downsizing can be
15 realized.
Reference Signs List
[0033] 1 DC power supply, 2 converter device, 3, 3A three-phase inverter, 4 load, 5 filter reactor, 6 filter 20 capacitor, 21, 21B single-phase inverter, 22, 22B
transformer, 23 rectifier circuit, 30U, 30V, 30W 2-in-l module, 100A, 100B auxiliary power supply device for vehicle, UNI, VNI, WNI, UPI, VPI, WPI switching element.

11

Docket No. PMAA-16165-PCT

CLAIMS .
1. A vehicle auxiliary power supply device mounted in an
electric rolling stock, the device comprising:
a converter device to convert first DC power supplied 5 from a DC power supply into second DC power; and
a three-phase inverter to convert the DC power supplied from the converter device into three-phase AC power and to supply the converted power to a load,
wherein when a switching element of the three-phase 10 inverter is constituted by a semiconductor module formed of a silicon-based material, a filter circuit by a filter reactor and a filter capacitor is provided on an output side of the three-phase inverter, and
by utilization of a semiconductor module, which is 15 formed of a wide bandgap semiconductor, as the switching element of the three-phase inverter instead of the semiconductor module formed of the silicon-based material, at least one of the filter reactor and the filter capacitor is not provided. 20
2. A vehicle auxiliary power supply device mounted in an
electric rolling stock, the device comprising:
a converter device to convert first DC power supplied from a DC power supply into second DC power; and 25 a three-phase inverter to convert the DC power
supplied from the converter device into three-phase AC power and to supply the converted power to a load,
wherein a switching element of the three-phase inverter is constituted by a semiconductor module formed of 30 a wide bandgap semiconductor,
3. The vehicle auxiliary power supply device according to
claim 1 or 2, wherein the converter device includes:

Docket No. PMAA-16165-PCT 12
a single-phase inverter to convert the first DC power into AC power, a transformer to convert the AC power supplied from the single-phase inverter into stepped-down AC power; and
5 a rectifier circuit to convert the power supplied from the transformer into the second DC power, and
the switching element of the single-phase inverter is constituted by a semiconductor module formed of a wide bandgap semiconductor.
0
4. The vehicle auxiliary power supply device according to claim 1 or 2, wherein the wide bandgap semiconductor is a semiconductor using silicon carbide, a gallium nitride-based material, or diamond.