Abstract: Vertical transistor devices are described. For example in one embodiment a vertical transistor device includes an epitaxial source semiconductor region disposed on a substrate an epitaxial channel semiconductor region disposed on the source semiconductor region an epitaxial drain semiconductor region disposed on the channel semiconductor region and a gate electrode region surrounding sidewalls of the semiconductor channel region. A composition of at least one of the semiconductor regions varies along a longitudinal axis that is perpendicular with respect to a surface of the substrate.
SOFT COPY ATTACHED IN PDF
| # | Name | Date |
|---|---|---|
| 1 | Priority Document [22-01-2016(online)].pdf | 2016-01-22 |
| 2 | Drawing [22-01-2016(online)].pdf | 2016-01-22 |
| 3 | Description(Complete) [22-01-2016(online)].pdf | 2016-01-22 |
| 4 | 201647002517.pdf | 2016-01-28 |
| 5 | 201647002517-Correspondence-ASSIGNMENT-100216.pdf | 2016-06-29 |
| 6 | 201647002517-ASSIGNMENT-100216.pdf | 2016-06-29 |
| 7 | 201647002517-Power of Attorney-170216.pdf | 2016-06-30 |
| 8 | 201647002517-Correspondence-Power Of Attorney-170216.pdf | 2016-06-30 |
| 9 | ABSTRACT.pdf | 2016-07-06 |
| 10 | abstract 201647002517.jpg | 2016-07-06 |
| 11 | 201647002517-FORM 18 [21-08-2017(online)].pdf | 2017-08-21 |
| 12 | 201647002517-FER.pdf | 2020-05-22 |
| 13 | 201647002517-FORM 3 [18-11-2020(online)].pdf | 2020-11-18 |
| 14 | 201647002517-PETITION UNDER RULE 137 [20-11-2020(online)].pdf | 2020-11-20 |
| 15 | 201647002517-OTHERS [20-11-2020(online)].pdf | 2020-11-20 |
| 16 | 201647002517-FER_SER_REPLY [20-11-2020(online)].pdf | 2020-11-20 |
| 17 | 201647002517-CLAIMS [20-11-2020(online)].pdf | 2020-11-20 |
| 18 | 201647002517-US(14)-HearingNotice-(HearingDate-12-05-2023).pdf | 2023-04-18 |
| 19 | 201647002517-Correspondence to notify the Controller [19-04-2023(online)].pdf | 2023-04-19 |
| 20 | 201647002517-Correspondence to notify the Controller [12-05-2023(online)].pdf | 2023-05-12 |
| 1 | search_27-02-2020.pdf |