Sign In to Follow Application
View All Documents & Correspondence

Semiconductor Power Module And Method For Manufacturing A Semiconductor Power Module

Abstract: A semiconductor power module (10) for a semiconductor device comprises a leadframe or substrate (4) and a resin body that is coupled to the leadframe or substrate (4). The resin body includes at least a first resin element (1) and a second resin element (2), wherein a resin material of the first resin element (1) is different from a resin material of the second resin element (2). The resin elements (1, 2) are configured such that they are separated in part at least with respect to surface areas facing each other by means of a recess (5, 6).

Get Free WhatsApp Updates!
Notices, Deadlines & Correspondence

Patent Information

Application #
Filing Date
19 October 2023
Publication Number
47/2023
Publication Type
INA
Invention Field
ELECTRONICS
Status
Email
Parent Application

Applicants

HITACHI ENERGY LTD
Brown-Boveri-Strasse 5 8050 Zürich

Inventors

1. GUILLON, David
Rempen 13 8857 Vorderthal
2. MOHN, Fabian
Hertensteinstrasse 15 5408 Ennetbaden

Specification

We Claim:
1. A semiconductor power module (10), comprising:
- a leadframe or substrate (4), and
- a resin body coupled to the leadframe or substrate (4) including at least a first resin element (1) and a second resin element (2), wherein the first and second resin elements (1, 2) are arranged laterally adjacent to each other with respect to a lateral direction (B, C) of the semiconductor power module (10) and wherein a resin material of the first resin element (1) is different from a resin material of the second resin element (2) and wherein the first resin element (1) and the second resin element (2) are separated in part at least with respect to surface areas facing each other by means of a recess (5, 6) in form of a groove providing at least a partial free space between the first and second resin elements (1, 2).
2. The semiconductor power module (10) according to claim 1, wherein at least one of the resin material of the first resin element (1) or the resin material of the second resin element (2) comprises a thermosetting resin.
3. The semiconductor power module (10) according to claim 1 or 2, wherein at least one of the resin material of the first resin element (1) or the resin material of the second resin element (2) comprises a potting resin.
4. The semiconductor power module (10) according to any one of the preceding claims, wherein the recess is formed as a penetrating groove (5) such that the entire surface areas facing each other are separated from each other. 
5. The semiconductor power module (10) according to any one of the preceding claims, wherein at least one of the penetrating groove (5) or the groove (6) has a width of 0.5 mm or more with respect to a lateral direction (B, C) of the semiconductor power module (10).
6. The semiconductor power module (10) according to any one of the claims 4 to 5, comprising at least one of a filling (7) or a coating (8) inside at least one of the penetrating groove (5) or the groove (6).
7. The semiconductor power module (10) according to any one of the preceding claims, wherein the resin body further comprises a third resin element (3) with a resin material that is different from the resin material of at least one of the first resin element (1) or the second resin element (2) and wherein the first resin element (1), the second resin element (2) and the third resin element (3) all are separated in part at least with respect to surface areas facing each other by means of a recess respectively.
8. The semiconductor power module (10) according to any one of the preceding claims further including terminal connections (11, 12) coupled to the leadframe or substrate
(4) , and
- electronics which is coupled with at least one of the terminal connections (11, 12).
9. A method for manufacturing a semiconductor power module (10) according to one of the claims 1 to 8, comprising:
- providing a leadframe or substrate (4), and
- forming a resin body coupled to the leadframe or substrate (4), wherein the resin body includes at least a 

first resin element (1) and a second resin element (2),
wherein the first and second resin elements (1, 2) are
arranged laterally adjacent to each other with respect to a lateral direction (B, C) of the semiconductor power module
(10) and wherein a resin material of the first resin element
(1) is different from a resin material of the second resin
element (2), and wherein the first resin element (1) and the
second resin element (2) are separated in part at least with respect to surface areas facing each other by means of a recess (5, 6) in form of a groove providing at least a partial free space between the first and second resin elements (1, 2).
10. The method according to claim 9, wherein the step of forming the resin body comprises:
- providing a substance in the form of a mold compound resin, and
- applying the provided substance on the leadframe or substrate (4) and thereby forming the first resin element (1) and/or the second resin element (2) by means of transfer molding, injections molding and/or compression molding.
11. The method according to claim 9 or 10, wherein the forming the resin body comprises:
- providing a substance in the form of a potting resin, and
- applying the provided substance on the leadframe or substrate (4) and thereby forming at least one of the first resin element (1) or the second resin element (2) by means of potting.
12. The method according to any one of the claims 9-11, wherein the forming the resin body comprises:
mechanical forming the recess in the form of a penetrating groove (5) or a groove (6) by means of at least one of cutting, sawing or milling subsequent to the forming of the first resin element (1) and the second resin element (2).
5
13. The method according to any one of the claims 9-12, wherein the forming the resin body comprises:
thermal forming the recess in the form of a penetrating groove (5) or a groove (6) by means of laser cutting
10 subsequent to the forming of the first resin element (1) and the second resin element (2).
14. The method according to any one of the claims 9-13, wherein the forming the resin body comprises:
15 chemical forming the recess in the form of a penetrating groove (5) or a groove (6) by means of etching subsequent to the forming of the first resin element (1) and the second resin element (2).

Documents

Application Documents

# Name Date
1 202347071365-STATEMENT OF UNDERTAKING (FORM 3) [19-10-2023(online)].pdf 2023-10-19
2 202347071365-PROOF OF RIGHT [19-10-2023(online)].pdf 2023-10-19
3 202347071365-PRIORITY DOCUMENTS [19-10-2023(online)].pdf 2023-10-19
4 202347071365-FORM 18 [19-10-2023(online)].pdf 2023-10-19
5 202347071365-FORM 1 [19-10-2023(online)].pdf 2023-10-19
6 202347071365-DRAWINGS [19-10-2023(online)].pdf 2023-10-19
7 202347071365-DECLARATION OF INVENTORSHIP (FORM 5) [19-10-2023(online)].pdf 2023-10-19
8 202347071365-COMPLETE SPECIFICATION [19-10-2023(online)].pdf 2023-10-19
9 202347071365-FORM-26 [10-01-2024(online)].pdf 2024-01-10
10 202347071365-FORM 3 [26-02-2024(online)].pdf 2024-02-26
11 202347071365-FER.pdf 2025-02-27
12 202347071365-FORM 3 [05-03-2025(online)].pdf 2025-03-05
13 202347071365-FORM 3 [05-03-2025(online)]-1.pdf 2025-03-05
14 202347071365-Proof of Right [14-07-2025(online)].pdf 2025-07-14
15 202347071365-OTHERS [14-07-2025(online)].pdf 2025-07-14
16 202347071365-FER_SER_REPLY [14-07-2025(online)].pdf 2025-07-14
17 202347071365-CLAIMS [14-07-2025(online)].pdf 2025-07-14

Search Strategy

1 202347071365_SearchStrategyNew_E_Search_202347071365E_26-02-2025.pdf