The disclosure relates to a transformer arrangement (100) comprising a transformer (10) which comprises at least one phase winding (12). The phase winding (12) has coil turns around a coil axis (c). The transformer arrangement (100) further comprises a transformer tank (20) having walls (22) forming an enclosure in ...

The present invention relates to a transistor (10), in particular a wide bandgap semiconductor power transistor (40), comprising an epitaxial layer (11) of a first conductivity type, at least one well region (13) of a second conductivity type formed in a selected area of the epitaxial layer (11), at least one termin...

A method for monitoring a transformer (10) comprising a tap changer (16), wherein extracted information comprises a circulating current amplitude (AC) and/or a circulating current time (tC) covering at least a part of the tap change operation represented by at least one current difference waveform, and/or a transiti...

A turret assembly comprises a turret configured to contain pressure created and including a circumferential outer surface, an elbow portion configured to couple to a housing assembly, and a distal portion extending distally from the elbow portion; and a coupling assembly configured to further couple the turret to th...

The present disclosure relates to a driving system (1) for an on-load tap changer, comprising a vacuum interrupter driving mechanism (10) configured to drive a vacuum interrupter of the on-load tap changer, an energy accumulation mechanism (14) mechanically coupled with the vacuum interrupter driving mechanism (10),...

The invention relates to a gas-insulated high or medium voltage circuit breaker (1) comprising: a first arcing contact (2) and a second arcing contact (3), whereby at least one of the two arcing contacts (2, 3) is axially movable along a switching axis (4), thereby forming, during a breaking operation, an arc (5) be...

In an embodiment, the power semiconductor device (1) comprises: - a semiconductor body (2) having a source region (21) of a first conductivity type and a well region (22) of a second conductivity type different from the first conductivity type, and the well region (22) comprises a channel region (220) directly at th...

In at least one embodiment, the power semiconductor device (1) comprises: - a semiconductor body (2) having a source region (21) of a first conductivity type and a well region (22) of a second conductivity type different from the first conductivity type, and the well region (22) comprises a channel region (220) star...

In at least one embodiment, the power semiconductor device (1) comprises: - a semiconductor body (2) having a source region (21) of a first conductivity type and a well region (22) of a second conductivity type different from the first conductivity type, and the well region (22) comprises a channel region (220) dire...

In at least one embodiment, the power semiconductor device (1) comprises: - a semiconductor body (2) having a source region (21) of a first conductivity type and a well region (22) of a second conductivity type different from the first conductivity type, and the well region (22) comprises a channel region (220) star...

The present disclosure relates to an enclosure for an electric device in a high voltage electric field, the enclosure comprising at least one top element and at least one corresponding bottom element extending circumferentially from a centre portion, wherein the top and the bottom elements are plate-like elements di...

The invention relates to a fast earthing switch (1) comprising two contacts (2) of which at least one contact (2) is movable in relation to the other contact between a closed position, in which the contacts (2) are connected, and an open position, in which the contacts (2) are unconnected, said contacts (2) defining...

A transformer core is provided which has a first yoke (2), a second yoke (4), a column (6) having a column main axis (8) and extending between the first yoke (2) and the second yoke (4). The transformer further has an elongate clamping structure (10) comprising an elongate rigid member (12) having a rigid member mai...

According to an embodiment, the spacer element (1) for a winding (100) of an electric device comprises at least one connection member (20, 21, 22) and a plurality of ribs (3). The ribs are connected to the connection member and are spaced from each other pairwise. The spacer element is arrangeable between two succes...

In at least one embodiment, the power semiconductor device (1) comprises: - a semiconductor body (2), - a gate electrode (31), and - an extraction electrode (34), wherein the semiconductor body (2) comprises - a source region (21) of a first conductivity type, - a well region (22) of a second conductivity type diffe...

A power module (1) comprising at least one substrate (2), at least one switching device (3) located on the substrate (2), at least one power path (6) for supplying power to the at least one switching device (3) and at least one auxiliary path (7, 10) for controlling and/or monitoring the switching device (3), wherei...

According to an embodiment, the RC-IGBT (1000) comprises a semiconductor body with an emitter side and a collector side (shown in Fig. 4), a collector layer at the collector side with at least one pilot region (10) and at least one mixed region (11) and a collector electrode on the collector side and in electrical c...

The present disclosure relates to a transformer comprising a plurality of windings, the plurality of windings comprising a first winding and a second winding, wherein the first winding comprises a first winding portion at a first position in an axial direction and in a radial direction, and a second winding portion ...

A flow inverter (1) for a coolant substance (18) for a power semiconductor component (16) is specified, comprising - a first plate (2) extending along a main extension plane of the flow inverter (1), - a second plate (3) extending along the main extension plane, - a first wall (4) provided on the first plate (2) and...

A transformer system (1) for a direct current converter system (20) comprises a plurality of windings (4a, 4b, 4c, 5a, 5b, 5c) for three electrical phases (3a, 3b, 3c), the windings (4a, 4b, 4c, 5a, 5b, 5c) being electrically connected to provide a 15° phase shift, and comprising at least three separate tanks (6a, 6...

The present disclosure relates to a cable module with a detachable fracture feature, a gas-insulated device comprising the cable module, and a method for manufacturing the cable module. The cable module for a high voltage gas-insulated device with a detachable electric connection comprises: an enclosure (1) provided...

According to an embodiment, the semiconductor device (100) comprises a semiconductor body (1) with a first side (10) and a second side (20) opposite to the first side. The semiconductor device further comprises a first thyristor structure (I) and a second thyristor structure (II). The second thyristor structure is a...

Device (10) for measuring an alternating (AC) leakage current though a conductor (12), whereby the device (10) comprises: a conversion circuit (14) comprising a magnetic core (20) and a leakage current measurement circuit (18). The device (10) comprises a synchronous rectification circuit (16) that comprises a plura...

A method for attaching a terminal (4) to a metal substrate structure (3) for a semiconductor power module (10) comprises providing at least one terminal (4) and providing the metal substrate structure (3) with a metal top layer (17), a metal bottom layer (19) and an isolating resin layer (18) arranged between the me...

A cooler unit (1) for liquid cooling of a power module (30) comprises at least one insert (10) that includes an upper part (15) and a lower part (16) and that is configured to be coupled to the power module (30) with the upper part (15). The cooler unit (1) further comprises a housing (20) that limits an internal fl...

The present disclosure relates to a method for power control of a common power converter comprising a plurality of power converters. The method comprises: determining a number of power converters of the plurality of power converters to be activated; determining, based on the at least one electrical parameter of the ...

An apparatus (20) for measuring a high voltage on a high-voltage node including a power electronic converter comprising a first AC-to-DC converter (21), a first DC-to-AC converter (22) and a second AC-to-DC converter (23), the first AC-to-DC converter being connected with a low voltage arm of a high voltage divider,...

A method for obtaining an improved transformer design for a power plant, comprises the steps of defining one or more critical temperatures (?hwnormal, ?hwcontingency, ?h, ?o) in the operation of the transformer, determining a limit (?hw,max normal, ?hw,max contingency, ?h,max, ?o,max) for at least one of the critica...

A semiconductor power module (1) comprises a metal substrate structure (10) with a metal top layer (11), a metal bottom layer (13), and a dielectric layer (12) in between. The semiconductor power module (1) further comprises a housing (2) with a top wall (21) and side walls (22) that is coupled to the metal substrat...

The present disclosure relates to a method for monitoring a power device. The method comprises obtaining at least one frequency spectrum of at least one physical component of the power device, wherein the at least one frequency spectrum comprises at least one eigenfrequency of the at least one physical component of ...

The present disclosure relates to a power semiconductor device (100) comprising a silicon carbide semiconductor, SiC, structure (110) comprising a SiC epilayer (112), at least one ohmic contact (120) formed on a first main surface (114) of the SiC structure (110), and at least Schottky barrier contact (130) formed o...

The present invention relates to an electrical apparatus for the generation, the transmission, and/or the distribution of electrical energy comprising a housing enclosing an electrical apparatus interior space, at least a portion of the electrical apparatus interior space forming an insulation space, in which an ele...

The invention relates to a gas insulated electric apparatus (1 ) comprising an enclosure (2), an electric high voltage appliance (3) arranged inside the enclosure (2) and a permeation barrier (5) arranged within the enclosure (2) and circumferentially surrounding the electric high voltage appliance (3), whereby the ...

A cooling arrangement (20) for cooling at least one OAEHE in a transformer. The cooling arrangement (20) comprises at least one impeller-motor device (10), at least one fluid pipe (11) and at least one fluid discharge device (12). The at least one impeller-motor device (10) is adapted to supply a fluid to the inlet ...

HV GIS for single or three phase operation, with a plurality of disconnector modules associated to each phase, whereby the disconnector modules are filled with gas and each comprise a disconnector for connecting a feeder to a main busbar. The disconnector modules are interconnected with the main busbar associated to...

A system and a method for adjusting a length of an insulating rod for a high voltage circuit breaker and a high voltage circuit breaker A system (10) for adjusting a length of an insulating rod (5) of a high voltage circuit breaker (1) comprises a clutch (11) and a fitting (12). The clutch (11) comprises a thread (1...

The present disclosure relates to a method for power control of a plurality of power converters forming a common power converter, the method comprising: determining a number of power converters to be deactivated of the plurality of power converters based on at least one load condition of the common power converter; ...

An on-load tap changer (1) comprises a static unit (2) comprising fixed contacts ( 4a-4e, 5a-5e ) for connection to taps at a transformer winding, a dynamic unit (7) comprising at least one movable contact (8, 9) for selectively contacting one of the fixed contacts ( 4a-4e, 5a-5e) during operation of the transformer...

A power semiconductor device (10) comprises a semiconductor body (11) which includes a first main surface (12) and a second main surface (13), a gate insulator (14) arranged at the first main surface (12), and a gate electrode (15) separated from the semiconductor body (11) by the gate insulator (14). The semiconduc...

A heat exchanger (12) comprising a primary side (20); a secondary side (22); at least one primary structure (26, 42, 50) on the primary side (20) defining at least one primary space (34, 46) on the primary side (20); and at least one secondary structure (28, 44, 50) on the secondary side (22) defining at least one s...

The present disclosure relates to a semiconductor device (1) comprising at least one epitaxial layer (2) made from a first semiconductor material comprising carbon and having a [0001] crystallographic axis. At least one implantation area (4) is formed at a sidewall (3a) of the epitaxial layer (2), wherein a normal d...

The disclosure relates to a tap changer assembly (100) comprising a tap changer assembly housing (110) completely enclosing a tap changer volume 10 and an overflow volume (12), respectively. The tap changer assembly (100) further comprising at least a part of a tap changer (13) located in the tap changer volume (10)...

A power semiconductor device (1) with a semiconductor body (2) extending in a vertical direction between an emitter side (21) with an emitter electrode (51) and a collector side (22) opposite the emitter side (21) is specified, the power semiconductor device (1) comprising: a drift layer (26) of a first conductivity...

A silicon carbide power device (100) having a low on-resistance Ron and a method for manufacturing the same are provided. The silicon carbide power device (100) comprises a first conductivity-type substrate (20), a plurality of silicon carbide layer stacks (30), a continuous insulating layer (40) and a gate electrod...

A structure (1) for a semiconductor device is provided, with - a contact layer (4) comprising first dopants of a first conductivity type, - a base layer (2) of a second conductivity type, and - a defect layer (5) comprising first dopants of the first conductivity type, wherein - a concentration of the first dopants ...

A method for producing a silicon carbide substrate (11) comprises providing the silicon carbide substrate (11) and irradiating the silicon carbide substrate (11) with particles (14) out of a group comprising electrons, hydrogen atoms, helium atoms, lithium atoms, beryllium atoms, boron atoms, sodium atoms, magnesium...

The present disclosure relates to a method for power control of a power converter comprising: controlling, with a first signal having a first duty cycle D1, a first active switching component in a switching unit of at least one branch; controlling, with a second signal having a second duty cycle D2, a second active ...

A clamping element (9) is specified configured to be pressed to a baseplate (2) of at least one power semiconductor module (1) comprising a mold (4), comprising - at least one contact area (10) being configured to be in direct contact to at least one clamping area (7) of the baseplate (2) being free of the mold (4),...

A data processing system (20) and method are operative to determine a fault location along a line (11) based on measurements performed at an end of the line. The data processing system (20) is operative to process the measurements to determine a zero sequence fault current and perform a fault location determination ...

The present disclosure relates to a support structure (10) for at least one winding (24) of an inductive device, in particular a power transformer (20), comprising a press structure (11) configured to transfer and distribute an compression force from a holding structure to the at least one winding (24), an insulator...

A power semiconductor module (1) is specified, comprising: - at least one semiconductor chip (5) being connected to a cooling structure (3), - at least two power terminals (7) being in electrical contact to the at least one semiconductor chip (5), and - a housing (23) for the power semiconductor chip (5) and the at ...

Various aspects of prognosis of an installed high voltage equipment (HVE) by a monitoring system are described. One or more models are dynamically selected from a plurality of models tuned from data obtained from a plurality of HVEs communicatively connected with the monitoring system. A failure mode of the installe...

The present invention relates to an instrument transformer of a type designed for using an insulation medium containing SFe, said instrument transformer comprising a housing enclosing an insulation space and further comprising an electrical active part arranged in the insulation space, said insulation space containi...

A vacuum interrupter assembly (10) for a power diverter switch comprises a vacuum interrupter (11) and a driving mechanism (12) which is coupled to the vacuum interrupter (11) and which is configured to drive opening and closing of electrical contacts of the vacuum interrupter (11). The driving mechanism (12) includ...

A semiconductor power module (10) for a semiconductor device comprises a leadframe or substrate (4) and a resin body that is coupled to the leadframe or substrate (4). The resin body includes at least a first resin element (1) and a second resin element (2), wherein a resin material of the first resin element (1) is...

A conductor (1, 10) for conducting electric current has along its length (L) at least two main sections (2, 2', 3, 3', 18, 19, 20) comprising at least a first main section (2, 2', 18) and a second main section (3, 3', 19) and at least one transposing junction (4, 4', 21) connecting adjacent ones of the main sections...

The present disclosure relates to a current damper for a voltage transformer, comprising a first section comprising at least one pair of diodes arranged in an anti-parallel configuration; a second section arranged parallel to the first section, and comprising at least one capacitor; and the first section and the sec...

The present disclosure relates to a method for adaptively obtaining a corrected apparent impedance. The method comprises acquiring a current measurement and a voltage measurement in the power grid at the time of a fault, acquiring at least one line impedance parameter, obtaining a fault type, and adaptively obtainin...

The disclosure relates to a power semiconductor module (34), comprising a substrate (12) which carries a plurality of power semiconductor devices (10), wherein the plurality of power semiconductor devices (10) comprises a first group of power semiconductor devices (10) and a second group of at least one power semico...

A power semiconductor device (1) is described comprising: - a first main electrode (3), - a second main electrode (4), - a gate electrode layer (5) between the first main electrode (3) and the second main electrode (4), - a semiconductor layer stack (2) between and in electrical contact with the first main electrode...

The invention relates to a relay that comprises a base assembly (2), a relay mechanics module (4) supported by the base assembly, and a housing element (6) that houses the relay mechanics module and that is connected to the base assembly. The housing element comprises a flange (62) configured for attaching the relay...

The invention relates to a disconnector or earthing switch (1) for connecting three conductors (2) of different phases to a respective switching tube (3), comprising a rotatable drive shaft (4) comprising a worm (7) and configured for operating the dis-connector or earthing switch (1), the three respective switching...

The present disclosure relates to an insulator with phase-position transformation function, a gas-insulated device comprising the insulator, and a manufacturing method of the insulator. The insulator comprises: an outer fixing member (1); an insulating body (2) surrounded by the outer fixing member (1) and having a ...

An electric device (1) comprises a tank (4) and a cable box (6) connected to the tank (4), the tank (4) and the cable box (6) being filled with an insulating liquid (5), electric connection system (27) for connecting a power cable (2) through the cable box (6) to the tank (4) and a current measuring device (14) for ...

According to an embodiment, the power module (100) comprises a power semiconductor device (1) and a connection element (2) for electrically connecting the power semiconductor device. Furthermore, the arrangement comprises a sensing element (3) for measuring a measurand. A bond section (21) of the connection element ...

The present disclosure relates to an anti-rebound protection device and a circuit breaker comprising the same. An operating mechanism of the circuit breaker comprises a housing, a main shaft arranged in the housing, and an output lever 4 connected to the main shaft. The anti-rebound protection device comprises: a co...

The semiconductor device (100) is a vertical IGBT and comprises a semiconductor body (1) with a top side (10), a main electrode (2) on the top side and a gate electrode (3). The semiconductor body comprises a drift layer (11) of a first conductivity type, a first base region (12) of a second conductivity type, a sec...

A solid dielectric surge arrester includes a hermetically sealed composite encased module assembly. The module assembly includes at least one metal oxide varistor (MOV) block with an outer circumferential surface, and a material applied to the outer circumferential surface. The material includes multiple layers to a...

A transformer (200) comprising a core (201), such as, for example, a single-phase core, that comprises a plurality of wound limbs (205a, 205b), primary and secondary concentric windings (202, 204, 212, 214) formed on each limb of the plurality of wound limbs (205a, 205b), and at least one tertiary concentric winding...

According to an embodiment, the method comprises a step of providing a semiconductor body (1) with a top side (10). A mask (2) is applied on the top side of the semiconductor body, wherein the mask comprises at least one first section (21) and at least one second section (22). The at least one second section is late...

The present disclosure relates to a manufacturing method for a power semiconductor device (20), comprising: forming at least one insulating layer (3) on a surface (2a) of a crystalline growth substrate (2), the at least one insulating layer (3) comprising at least one cavity (4) extending in a lateral direction (22)...

The present disclosure relates to a method for detecting a DC magnetization in a transformer (420) and controlling the transformer, the method comprising: sensing, using at least one vibration sensor, at least one vibration on at least one surface of the transformer or on at least one surface of a component connecte...

An electromagnetic device (10) comprising a magnetic field-generating electric circuit comprising at least one winding (12), and a system (24) configured to monitor a condition of the electromagnetic device (10) and/or to control the electromagnetic device (10). The condition-monitoring and/or control system (24) co...

Power semiconductor device and method for producing a power semiconductor device The power semiconductor device (100) comprises a semiconductor body (1) with a top side (10), a main electrode (2) on the top side and a gate electrode (3) on the top side and arranged next to the main electrode in a first lateral direc...

An electrical switch (1) for an on-load tap changer (2), said electrical switch (1) comprising: at least three electrical contacts (3a, 3b, 3c) connected to a respective electrical conductor (4a, 4b, 4c), a switch means (5) configured to be movable between a plurality of positions (P1, P2), wherein the switch means ...

A semiconductor power module (10) comprises a substrate (4) and at least one terminal (2) that is electrically coupled to the substrate (4). The semiconductor power module (10) further comprises a reinforcement member (3) that comprises a material different from a material of the at least one terminal (2), and a hou...

The disclosure relates to a winding (110) for a phase winding of a transformer (20). The winding (110) comprises a plurality of winding portions (116) arranged along a coil axis (z). The plurality of winding portions (116) comprise a first winding portion (116a) arranged at a first end (110a) of the winding (110) an...

The bushing (100) comprises a plurality of electrically conductive elements (1, 2a..2c, 3, 4, 6) and at least one ultrasonic welding joint (10). The at least one ultrasonic welding joint is formed between one electrically conductive element and another electrically conductive element and mechanically and electricall...

A tap changer arrangement (10) comprising a tap changer housing (12) having a longitudinal extension along a first axis (A), which tap changer housing (12) comprises a first interface part (14), at a proximal part of the tap changer housing (12), fixedly attachable to a support structure (16) of a transformer tank (...

A semiconductor switching device (1) comprises a gate ring (5) and a gate connector element (6) for contacting the gate ring (5) and comprises a pressure system (7) for pressing the gate connector element (6) onto the gate ring (5), the pressure system (7) comprising an insulating ring (11) and a plurality of spring...

A power module (1) comprises one or more substrates (28, 29, 30, 31), at least one high-side switching device (2, 19) and at least one low-side switching device (3, 20) located on one or more of the substrates (28, 29, 30, 31), and at least one high-side auxiliary terminal (5, 7) and at least one low-side auxiliary ...

In at least one embodiment, the method is for producing a power semiconductor device (1) and comprises the following steps: - providing a semiconductor body (2) based on SiC, - irradiating at least a first portion (21) of a top side (20) of the semiconductor body (2) with low-energy electron radiation (E), and - pro...

The power submodule (200) comprises a power semiconductor device (1) with a top side (10) and a bottom side (12) as well as an electrically isolating body (2) surrounding the power semiconductor device. The power submodule further comprises a top contact element (3) with a terminal region (30) on the top side of the...

The invention relates to a method for manufacturing a Silicon Carbide (SiC) substrate, at least comprising the steps of: a) providing the SiC-substrate, wherein the SiC-substrate is suitable for growing a SiC-epilayer thereon; and b) implanting group Va elements in the SiC-substrate by irradiating at least a part ...

A power module (100) comprising a semiconductor module component (10) and an alignment part (20) is provided, wherein the alignment part (20) is fixed on a lateral top surface (10T) of the semiconductor module component (10) and comprises at least one recessed portion (20R). The semiconductor module component (10) c...

A contact assembly for an electrical circuit breaker, or for an electrical circuit maker, or for an electrical switch, said contact assembly comprising a first contact member electrically connected to a first electrical terminal, a second contact member electrically connected to a second electrical terminal (5), and...

According to an embodiment the method for producing a semiconductor body (10) comprises the step of providing a first semiconductor layer (1) of SiC a further step of introducing carbon into the first semiconductor layer so that at least a portion of the first semiconductor layer becomes at least one C rich region...

A method for manufacturing a SiC semiconductor element (10) comprising the steps of providing a SiC substrate (20) with a SiC epitaxial layer (30) on top treating the SiC epitaxial layer (30) with plasma immersion ion implantation (PIII) using dopants of a first material (35). The method further comprises thermal ...

In one embodiment the semiconductor device (1) comprises a semiconductor body (2) a gate electrode (33) and a first electrode (31) wherein the semiconductor body (2) comprises a first region (21) which is a source region or an emitter region and comprises a well region (22) located next to the first region (21...

In one embodiment the semiconductor device (1) comprises a semiconductor body (2) a gate electrode (33) and a first electrode (31) wherein the semiconductor body (2) comprises a first region (21) which is a source region or an emitter region and comprises a well region (22) the first region (21) is of a first...

The invention relates to a torsion spring assembly for a switching apparatus (90, 80). The torsion spring assembly comprises at least one torsion spring (12a, 12b, 12c) configured to be arranged around a pivot shaft (18, 20) for pivoting at least one movable arm (60, 50) between a closed position in which a current ...

The present disclosure relates to a winding assembly (110) for a transformer (10) including at least one first winding (112) configured to be wound about a core (14) of the transformer (10), at least one second winding (118) configured to be wound around the first winding (112), the first winding (112) and the secon...

A method for producing an electrical regulation winding (13) is specified, with - providing a prefabricated conductor arrangement (1) extending in a main extension direction comprising a plurality of conductor wires (2) being electrically insulated from one another, - winding the conductor arrangement around a windi...

The disclosure relates to an electrostatic shielding element (1) arranged on a first axis (z) and comprising an electrostatically shielded volume (14) at least partially closed by an electrically conductive coating (12), wherein a thickness (d) and an electrical conductivity (s) of the coating (12) are selected to e...

A power transformer (1) for an on-load tap changer application comprises a winding arrangement (2) with a core (5), several windings (6, 7, 8) wound around the core (5), and a shield (9) located at an outer side of an outermost one of the windings (6, 7, 8), wherein the shield (9) comprises or consists of a conducti...

In one embodiment, the operating method is for operating a semiconductor module (10) and comprises: - providing the semiconductor module (10), wherein the semiconductor module (10) comprises a plurality of power semiconductor devices (1), the power semiconductor devices (1) are arranged next to each other seen in to...

In one embodiment, the semiconductor module (10) includes a plurality of semiconductor devices (1) and at least one bus line (5), wherein - each of the semiconductor devices (1) comprises a power semiconductor chip (2), a logic unit (3) and a gate pad (4), each of the power semiconductor chips (2) has a gate electro...

A control device (20) for at least one electric power system component (11) comprises at least one control circuit (30), configured to be coupled to a communication interface (21) and the at least one electric power system component (11). The at least one control circuit (30) is further configured to receive data fr...

A CO2 sequester and/or capture cooling system (100) comprising a CO2 sequester and/or capture module (170) configured to be coupled to a hot-insulating liquid heat transfer system (420) of a transformer (110) and/or at least one of an air inlet (130) and an air outlet (140) of a cooling fan (120) of a transformer (1...

A method for handling transportation and assembling of a single phase transformer. The single phase transformer is divided into two or more active parts (14). The two or more active parts (14) are transported to a site in at least two separate tanks (10). The single phase transformer is then assembled by connecting ...

A cooling arrangement (20) for cooling at least one OAEHE in a transformer. The cooling arrangement (20) comprises at least one impeller-motor device (10), at least one fluid pipe (11) and a first fluid discharge device (12). The first fluid discharge device (12) comprises a fluid inlet arranged to receive a fluid f...

A cooling arrangement (20) for cooling at least one OAEHE in a transformer. The cooling arrangement (20) comprises at least one impeller-motor device (10), at least one fluid pipe (11) and at least one fluid discharge device (12). The at least one impeller-motor device (10) is adapted to supply a humidity-controlled...

The invention relates to an operating mechanism for a switchgear device, compris- ing a rotatable output shaft (11) configured for achieving an opening or closing op- eration of the switchgear device by rotation, a rotatable energy storage lever (13) and a spring (4), whereby the energy storage lever (13) is configu...

According to an embodiment the sensor unit (10) for an electronic device (100) comprises a sensor element (1) for measuring a physical quantity in the electronic device and a contact element (2) which is configured to be mechanically biased. The contact element is fixed to the sensor element and electrically connec...

According to an embodiment the electronic device ( 100) comprises a sensor element (1) for measuring a physical quantity in the electronic device and a contact element (2) which is configured to be mechanically biased. Furthermore the electronic device comprises a measurement surface (30 60 90) at which the phys...

The present disclosure relates to a manufacturing method for a power semiconductor device (1 40) comprising: forming multiple growth templates on a carrier substrate (2) comprising at least a first plurality of hollow growth templates (18) and a second plurality of hollow growth templates (28); selectively growin...

Approaches for controlled switching of a switching device are described. In an example, determining a first rate of decrease of dielectric strength (RDDS) value and a second RDDS value is determined. Once determined, the first RDDS value is compared with an absolute peak value of a gap voltage. If the first RDDS...

The present disclosure relates to a CO2 sequester system comprising a CO2 sequester module being coupled to at least one of an air inlet and an air outlet of a cooling fan of a cooling tower cooling a coolant entering the cooling tower based at least on the air received into the air inlet of the cooling fan and exit...

The present disclosure relates to a super junction power semiconductor device (20) comprising a substrate (1), a plurality of core structures (4) and a plurality of annular shell structures (5). Each core structure (4) has a cylindrical shape extending in a direction perpendicular to a main surface of the substrate ...

The disclosure relates to a vacuum interrupter (1) for an on load tap changer (10) the vacuum interrupter (1) comprising a cylindrical housing (12) arranged on an axis (z) said housing comprising a wall (14) enclosing a hermetically sealed inner volume (16) the wall (14) further comprising a ceramic bottom part (...

A controller for a dual active bridge (DAB) is disclosed. The controller comprises a primary converter controller, configured to be coupled to a primary converter in the DAB and to control a duty cycle of the primary converter in the DAB based on a difference between a reference value and an output current of a seco...

A transposed electrical conductor (2) for electric power transmission at voltages of at least 1 kV is provided, with at least two electrical conductors (1) comprising a first electrical conductor (6) and a second electrical conductor (7), wherein each of the at least two electrical conductors (1) comprises at least ...

The semiconductor device (100) comprises a semiconductor body (10) with a top side (11) and a bottom side (19). A first main electrode (2) is arranged on the top side and a second main electrode (3) is arranged on the bottom side. The semiconductor device comprises a gate electrode (4) and at least two trenches, nam...

The semiconductor device (100) comprises a semiconductor body (10) with a top side (11) and a bottom side (19). A first main electrode (2) is arranged on the top side and a second main electrode (3) is arranged on the bottom side. The semiconductor device comprises a gate electrode (3) and at least two trenches, nam...

A transformer includes one or more primary windings configured to be coupled with an AC source. The transformer further includes at least two sets of secondary windings. Each set of secondary windings includes a high power secondary winding configured to transfer high power to a load and a low power secondary windin...

The semiconductor device (100) comprises a semiconductor body (10) with a top side (11) and a bottom side (19). A first main electrode (2) is arranged on the top side and a second main electrode (3) is arranged on the bottom side. The semiconductor device comprises a gate electrode (4) and at least two trenches, nam...

According to an embodiment, the RC-IGBT (100) comprises a semiconductor body (10) with an emitter side (11) and a collector side (19). The semiconductor body comprises at least one mixed region (18) at the collector side. The mixed region comprises a plurality of first-type regions (15) which are of a first conducti...

A data processing system (20) and data processing method for a substation system are provided, wherein the substation system comprises a primary system and a secondary system. Data acquired or generated by the secondary system are received and processed by the data processing system to perform a state assessment bas...

A power semiconductor device (1) is specified, comprising - a first electrode (2), - a first semiconductor layer (3) of a first conductivity type, - a drift layer (4) of the first conductivity type, - a second semiconductor layer (5) of a second conductivity type different from the first conductivity type, and - a s...

Embodiments herein provide a mechanical fuse device (50) for a drive shaft (82) of a switching apparatus (200). The fuse device (50) comprising a first connection portion (42) and a second connection portion (44), and a neck portion (46) connecting the first connection portion (42) and the second connection portion ...

The present disclosure relates to a device (10) for reducing noise caused by a transformer (12), including at least one sound-reducing element (16) configured to be arranged on an exterior of the transformer (12) and including at least one duct (18) arranged in a meandering pattern and configured to attenuate one or...

A transformer is provided. The transformer includes at least two transformers configured to electrically couple with each other and to supply power to a load via one or more converter modules. One or more transformers of the at least two transformers comprise a high-power secondary winding configured to transfer hig...

A method (M) for producing pressboard for electrical insulation (1), said method comprising, in any order: a) mechanically compressing (M1) at least one pressboard precursor (2) suitable for electrical insulation, and b) emitting (M2) electromagnetic waves (EM) towards the pressboard precursor(s) (2). The mechanical...

An on-load tap changer (1) comprises, a first tap s elector (6), a second tap selector (7), a first diverter switch (8) and a second diverter switch (9), wherein the diverter switches (8, 9) are connected to each other such that the tapped windings (2, 3) are connected in series, a first change-over selector (14) an...

The present disclosure relates to a system (10) including a transformer (12) which includes a tank (14) configured to receive a liquid (20). The system (10) further includes an overflow device (22) and a connection device (24) configured to fluidically connect the tank (14) and the overflow device (22). The overflow...

A power semiconductor device (20) is specified, comprising - a drift layer (1) of a first conductivity type, - at least one well region (2) of a second conductivity type being different from the first conductivity type, and - at least one first doped region (3) of the first conductivity type and at least one second ...

A power semiconductor device (1) is specified, comprising - a drift layer (2) of a first conductivity type, - a well region (3) of a second conductivity type being different from the first conductivity type, and - a first doped region (4) of the first conductivity type and a second doped region (5) of the second con...

The disclosure relates to a cooling arrangement (1) for cooling a transformer (10) in a transformer tank (12), the cooling arrangement (1) comprises a transformer tank (12), to be at least partially filled with an electrically insulating fluid when in use, a transformer (10) having windings (16), at least one heat e...

A transformer arrangement (12) comprising an airflow generator (1) and a transformer (10) provided with an oil-to-air external heat exchanger (11), the airflow generator (1) being configured to discharge air towards the oil-to-air heat exchanger (11). The airflow generator (1) comprises an electrically powered ducte...

An airflow generator (1) comprising a ducted fan (2) and a plurality of air multipliers (7a, 7b, 7c) for discharging air along a first axis (A), each air multiplier (7a, 7b, 7c) comprising an inlet (8) and an outlet (9), said ducted fan (2) being fluidly connected to the inlets (8) of the air multipliers (7a, 7b, 7c...

The present disclosure relates to an airflow generator (1) and to a transformer arrangement the airflow generator (1) and a transformer (11) provided with an oil-to-air external heat exchanger (6), said airflow generator (1) being configured to discharge air towards the oil-to-air heat exchanger (6). The airflow gen...

In at least one embodiment, the method is for producing a semiconductor device (1) and comprises the following steps in the stated order: A) providing a semiconductor body (2) having a top side (20), the semiconductor body (2) is based on SiC, B) producing a first layer (21) of the semiconductor body (2) next to the...

The present disclosure relates to a device (10) for at least partially manufacturing at least one component (50) of a transformer system. The device (10) may include at least one mold (12) configured to at least partially house at least one insulating material (52) configured to at least partially insulate at least ...

The invention relates to a power electronic transformer (2), comprising at least one first voltage unit (6) comprising first voltage power electronics building blocks, at least one second voltage unit (8) comprising second voltage power electronics building blocks, the first voltage being lower than the second volta...

An assembly (1) for a power semiconductor device (10) is provided, wherein the assembly (1) comprises a main body (1M) based on SiC and a plurality of vias (1V) based on an electrically conductive material. The main body (1M) comprises a first layer (11) having a first thickness (11T) and a second layer (12) having ...

Processing methods and processing systems are provided which are operative for processing measurements acquired in a power grid (11). The processing system (20) is operative to receive data comprising frequency data, wherein the frequency data represent a grid frequency measured at one or several locations in the po...

Processing methods and processing systems are provided which are operative for processing measurements acquired in a power grid (11). The processing system (20) is operative to determine disturbance parameters, cause introduction of a disturbance into the power grid in accordance with the disturbance parameters, and...

Processing methods and processing systems (20) are provided which are operative determining a time- dependent estimate of at least one response parameter that affects or represents a frequency response characteristics of a power grid (11). The time-dependent estimate of the at least one response parameter is determi...

A power semiconductor device (1) is specified, comprising - a first electrode (2), - a first semiconductor layer (3) of a first conductivity type, - a drift layer (4) of the first conductivity type, - a second semiconductor layer (5) of a second conductivity type different from the first conductivity type, and - a s...

Embodiments herein provide a disconnector (300) for an electrical apparatus (200), comprising a first contact (310) having a longitudinal center axis and a second contact (320). At least one of the first contact (310) and the second contact (320) is movable in a direction of the longitudinal center axis of the first...

The present disclosure relates to a method for protecting an electrical distribution system comprising an electrical grid being electrically coupled to an electrical branch, the electrical branch comprising a plurality of switches for connecting or disconnecting the electrical branch at respective positions on the e...

The present disclosure relatesd to a method of detecting a fault in a transmission line (101) in an alternating current, AC, power transmission system (100), the method comprising: - measuring, at a first measurement point of the transmission line, first phase voltages and first phase currents; - obtaining, for the ...

In at least one embodiment, the method is for producing a semiconductor device (1) and comprises: A) providing a semiconductor body (2) which is based on a group IV-semiconductor material, B) doping a first region (21) in the semiconductor body (2), the first region (21) is of a first conductivity type and starts fr...

A metal substrate structure (10) for a semiconductor power module comprises a circuit metallization layer (11), a metal bottom layer (13) that coupled with the circuit metallization layer (11), and an isolating dielectric layer (12) that is coupled with and arranged between the circuit metallization layer (11) and t...

The present invention relates to a method for determining temperature information, or information related to temperature information, related to a static electric induction device assembly (10). The static electric induction device assembly (10) having a vertical extension in a vertical direction (z). The method com...

The present disclosure relates to a method for protecting an electrical power collection system comprising an electrical grid being electrically coupled to an electrical branch, the electrical branch comprising a plurality of switches for connecting or disconnecting the electrical branch at respective positions on t...

The disclosure provides a method for altering a digital model, the method comprising: providing the digital model of an electrical device based on boundary conditions of a setup of the electrical device; providing measurement data from a sensor detecting a physical aspect of the electrical device; and altering the d...

An insulated metal substrate (1) for a power semico nductor device is specified, comprising - a metal base (2), - a dielectric layer (3) arranged on the metal base (2), - an electrically conductive layer (4) arranged on the dielectric layer (3), and - a reinforcement structure (5), wherein - the reinforcement struct...

The invention relates to a pumped two-phase cooling system that comprises a two- phase working fluid circuit, having a first circuit section (2) for guiding a first portion of the working fluid to a preheater assembly (4, 4', 4"), the first portion in the first circuit section (2) having first thermal characteristic...

The present invention relates to a method for estimating a physical quantity of a static electric induction device assembly (10). The static electric induction device assembly (10) comprises an enclosure (14), a static electric induction device (12) and a liquid (18) whereby the enclosure (14) accommodates the stati...

A transformer including an active part (100), a transformer tank (214), and one or more tank shunts (105, 106a, 106b, 106c, 107a, 107b, 218, 300). The active part (100) includes a core (102, 202) and windings (104a, 104b, 104c) around the core (102, 202). The transformer tank (214) includes a tank wall (306), and th...

Embodiments herein provide a method (200) for executing auto-reclosure of a circuit breaker, CB, (110) connected to a transmission line (120). The method (200) comprises receiving (210), from at least one measuring instrument (130) connected to the transmission line (120), one or more signals representing electrical...

Embodiments of the present disclosure provide a method (300) and system (200) for adaptive arrangement of network resources in electrical network. The system (200) receives network criteria to identify network-related information. The network criteria are used to arrange network resources in electrical network. The ...