Semiconductor Device And Method For Producing A Semiconductor Device

Abstract: The semiconductor device (100) comprises a semiconductor body (10) with a top side (11) and a bottom side (19). A first main electrode (2) is arranged on the top side and a second main electrode (3) is arranged on the bottom side. The semiconductor device comprises a gate electrode (4) and at least two trenches, namely a first-type trench (51) and a second-type trench (52). The semiconductor body comprises a drift region (14) of a first conductivity type and at least three base regions (13a, 13b, 13c) each of a second conductivity type. The semiconductor body further comprises an injection region (12) of the first conductivity type. The first main electrode is in electrical contact with the injection region. The gate electrode extends into the first- type trench. The second-type trench is free of the gate electrode. The third base region comprises at least one contact area (6c) in which the third base region is in electrical contact with an electrode of the semiconductor device which is different from the gate electrode.

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